CN206441712U - 一种SiC晶圆片金属电极退火炉用的新型石墨舟 - Google Patents
一种SiC晶圆片金属电极退火炉用的新型石墨舟 Download PDFInfo
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- CN206441712U CN206441712U CN201720039461.9U CN201720039461U CN206441712U CN 206441712 U CN206441712 U CN 206441712U CN 201720039461 U CN201720039461 U CN 201720039461U CN 206441712 U CN206441712 U CN 206441712U
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 74
- 239000010439 graphite Substances 0.000 title claims abstract description 74
- 235000012431 wafers Nutrition 0.000 title claims abstract description 26
- 238000000137 annealing Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 title claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 238000005457 optimization Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
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CN201720039461.9U CN206441712U (zh) | 2017-01-13 | 2017-01-13 | 一种SiC晶圆片金属电极退火炉用的新型石墨舟 |
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CN201720039461.9U CN206441712U (zh) | 2017-01-13 | 2017-01-13 | 一种SiC晶圆片金属电极退火炉用的新型石墨舟 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109244030A (zh) * | 2018-07-09 | 2019-01-18 | 浙江晶盛机电股份有限公司 | 一种用于外延生长装置的多功能晶片衬底基座 |
CN113851402A (zh) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州)有限公司 | 用于等离子刻蚀机的托盘及等离子刻蚀机 |
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2017
- 2017-01-13 CN CN201720039461.9U patent/CN206441712U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109244030A (zh) * | 2018-07-09 | 2019-01-18 | 浙江晶盛机电股份有限公司 | 一种用于外延生长装置的多功能晶片衬底基座 |
CN113851402A (zh) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州)有限公司 | 用于等离子刻蚀机的托盘及等离子刻蚀机 |
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Effective date of registration: 20231025 Address after: Room JZ2467, Yard 2, Junzhuang Road, Junzhuang Town, Mentougou District, Beijing, 102399 (cluster registration) Patentee after: Beijing Xingyun Lianzhong Technology Co.,Ltd. Address before: 100176 courtyard 17, Tonghui Ganqu Road, Daxing Economic and Technological Development Zone, Beijing Patentee before: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. |