CN206402101U - A kind of pfc circuit and charger - Google Patents
A kind of pfc circuit and charger Download PDFInfo
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- CN206402101U CN206402101U CN201720081213.0U CN201720081213U CN206402101U CN 206402101 U CN206402101 U CN 206402101U CN 201720081213 U CN201720081213 U CN 201720081213U CN 206402101 U CN206402101 U CN 206402101U
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- oxide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model provides a kind of pfc circuit and charger, and wherein circuit includes：AC power, inductor, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor of capacitor and HF switch, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor of power frequency switch；First metal-oxide-semiconductor connects to form totem pillar output circuit with the second metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor is connected with the drain electrode of the 3rd metal-oxide-semiconductor, the source electrode of 3rd metal-oxide-semiconductor is connected with the drain electrode of the 4th metal-oxide-semiconductor, the source electrode of 4th metal-oxide-semiconductor is connected with the source electrode of the second metal-oxide-semiconductor, and the drain electrode of the second metal-oxide-semiconductor is connected with the source electrode of the first metal-oxide-semiconductor；The first end of inductor is connected to the first end of the AC power, and the second end of inductor is connected between the drain electrode of the source electrode of first metal-oxide-semiconductor and second metal-oxide-semiconductor, greatly reduces component, saves cost, reduces circuit malfunction rate.
Description
Technical field
The utility model is related to circuit structure, more particularly to a kind of pfc circuit and charger.
Background technology
In the charging device of electric automobile either Vehicular charger or direct-current charging post, its circuit topological structure all from
Source power correcting circuit (abbreviation pfc circuit) is not provided with.Pfc circuit is the important step that alternating current turns direct current, and it can be protected
Card power supply does not influence the quality of power network, the distortion for reducing current harmonics, reduction Switching Power Supply operationally to produce when switching conversion
Raw reactive power.
Pfc circuit in most of chargers is by rectifier bridge+BOOST circuit combined structures, although such a circuit structure
It is stable, but used component is more, crash rate is just of a relatively high, and the loss produced by two-stage series connection is more.
Utility model content
A kind of pfc circuit and charger are provided in the utility model embodiment, made with solving pfc circuit in the prior art
Component is more, and crash rate is of a relatively high, and circuit loss it is more the problem of.
In order to solve the above-mentioned technical problem, the utility model embodiment is adopted the following technical scheme that：
On the one hand, the utility model embodiment provides a kind of active power correction pfc circuit, including：
AC power, inductor, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor of capacitor and HF switch, the 3rd of power frequency switch the
Metal-oxide-semiconductor and the 4th metal-oxide-semiconductor；
First metal-oxide-semiconductor connects to form totem pillar output circuit with second metal-oxide-semiconductor, wherein, the first MOS
The drain electrode of pipe is connected with the drain electrode of the 3rd metal-oxide-semiconductor, and the source electrode of the 3rd metal-oxide-semiconductor connects with the drain electrode of the 4th metal-oxide-semiconductor
Connect, the source electrode of the 4th metal-oxide-semiconductor is connected with the source electrode of second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor and described first
The source electrode connection of metal-oxide-semiconductor；
The first end of the inductor is connected to the first end of the AC power, and the second end of the inductor is connected to
Between the drain electrode of the source electrode of first metal-oxide-semiconductor and second metal-oxide-semiconductor, the second end of the AC power is connected to described
Between the drain electrode of the source electrode of three metal-oxide-semiconductors and the 4th metal-oxide-semiconductor, the first end of the capacitor is connected to the 3rd metal-oxide-semiconductor
Drain electrode, the second end of the capacitor is connected to the source electrode of the 4th metal-oxide-semiconductor.
Alternatively, when the output voltage of the AC power is in positive half period, the 3rd metal-oxide-semiconductor shut-off is described
4th metal-oxide-semiconductor is turned on；When the output voltage of the AC power is in negative half-cycle, the 3rd metal-oxide-semiconductor shut-off, described the
Four metal-oxide-semiconductors are turned on.
Alternatively, the switching frequency of first metal-oxide-semiconductor and the second metal-oxide-semiconductor is 50kHZ.
Alternatively, the switching frequency of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is 50HZ.
Alternatively, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are P-channel enhancement type MOS
Pipe.
Alternatively, first metal-oxide-semiconductor and second metal-oxide-semiconductor are silicon carbide mos pipe.
Alternatively, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are silicon metal-oxide-semiconductor.
On the other hand, the utility model embodiment also provides a kind of charger, and the charger includes PFC as described above
Circuit.
One or more embodiments of the present utility model have the advantages that：
In circuit structure of the present utility model, control mode is the control mode of totem pillar in circuit operation, the
Cooperatively form hard switching pattern between one metal-oxide-semiconductor and the second metal-oxide-semiconductor, improve switching characteristic, be integrally formed into H bridge structures without bridge
In PFC topological circuits, the application circuit for being adapted to two-way Vehicular charger, allow electric automobile realize V2L (car to load)/
The functions such as V2G (car is to power network), while the function of original rectifier bridge+BOOST circuits is realized, greatly reduce component, section
Cost-saving, reduces circuit malfunction rate.
Brief description of the drawings
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is a part of embodiment of the utility model, rather than whole implementation
Example.Based on the embodiment in the utility model, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belongs to the scope of the utility model protection.
Fig. 1 represents the overall structure diagram of pfc circuit；
Fig. 2 represents the switching sequence figure of 4 metal-oxide-semiconductors；
Fig. 3 represents current direction schematic diagram one in exchange positive half period；
Fig. 4 represents current direction schematic diagram two in exchange positive half period；
Fig. 5 represents current direction schematic diagram one in exchange negative half-cycle；
Fig. 6 represents current direction schematic diagram two in exchange negative half-cycle.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is a part of embodiment of the utility model, rather than whole implementation
Example.Based on the embodiment in the utility model, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belongs to the scope of the utility model protection.
The utility model discloses a kind of active power correction pfc circuit, with reference to Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 institute
Show, including：
AC power AC, inductor L, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 of capacitor C and HF switch, power frequency are opened
The 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 closed.
The first metal-oxide-semiconductor Q1 connects to form totem pillar output circuit with the second metal-oxide-semiconductor Q2, wherein, first metal-oxide-semiconductor
Q1 drain electrode is connected with the drain electrode of the 3rd metal-oxide-semiconductor Q3, and the source electrode of the 3rd metal-oxide-semiconductor Q3 is with the 4th metal-oxide-semiconductor Q4's
Drain electrode connection, the source electrode of the 4th metal-oxide-semiconductor Q4 is connected with the source electrode of the second metal-oxide-semiconductor Q2, the leakage of the second metal-oxide-semiconductor Q2
Pole is connected with the source electrode of the first metal-oxide-semiconductor Q1.
Wherein, inductor L first end is connected to the first end of the AC power AC, the second end of the inductor L
Between the drain electrode for being connected to the source electrode of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, the second end of the AC power AC
It is connected between the source electrode of the 3rd metal-oxide-semiconductor Q3 and the drain electrode of the 4th metal-oxide-semiconductor Q4, the first end of the capacitor C connects
The drain electrode of the 3rd metal-oxide-semiconductor Q3 is connected to, the second end of the capacitor C is connected to the source electrode of the 4th metal-oxide-semiconductor Q4.
In circuit structure of the present utility model, the first metal-oxide-semiconductor Q1 connects to form totem pillar output electricity with the second metal-oxide-semiconductor Q2
Control mode is the control mode of totem pillar, matching somebody with somebody between the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 in road, circuit operation
Conjunction forms hard switching pattern, improves switching characteristic, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor
Be formed as the non-bridge PFC topological circuit of H bridge structures between Q4, the non-bridge PFC main circuit is using 4 switching tubes, Q1 and Q2 work always
Make high frequency hard switching state, the non-bridge PFC circuits of four metal-oxide-semiconductor circuit structures are a kind of topological structure of four-quadrant, Ke Yitong
Cross change drive control and realize DCAC inversion functions, in the application circuit to adapt to two-way Vehicular charger, make electric automobile can
To realize the functions, the circuit structure, relative to former rectifier bridge+BOOST circuits such as V2L (car is to load)/V2G (car is to power network)
Pfc circuit, while the function of original rectifier bridge+BOOST circuits is realized, greatly reduce component, save cost, reduction
Circuit malfunction rate.
Further, specifically, when AC power AC output voltage is in positive half period, the 3rd metal-oxide-semiconductor Q3
Shut-off, the 4th metal-oxide-semiconductor Q4 conductings；When AC power AC output voltage is in negative half-cycle, the 3rd metal-oxide-semiconductor Q3 is closed
It is disconnected, the 4th metal-oxide-semiconductor Q4 conductings.
Fig. 2 is the switching sequence figure of 4 metal-oxide-semiconductors, wherein, PWM1 is Q1 drive waveforms；PWM2 is Q2 drive waveforms；
PWM3 is Q3 drive waveforms；PWM4 is Q4 drive waveforms；Uac is AC-input voltage.First metal-oxide-semiconductor Q1 and the 2nd MOS
Pipe Q2 is HF switch, and the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 switch for power frequency.
When AC power AC voltages are transfused to, and within the positive period that the positive N of L are born, Q4 power frequencies are opened and Q3 power frequencies are closed.
Exchange in positive half period (L phases are more than N phases), Q1 and Q2 HF switches constitute boost booster circuits.Current direction such as Fig. 3 and figure
Shown in 4.In figure 3, be in 0~t1, and Q1 shut-off, Q2 conducting when, exchange positive period in inductance storage energy.In Fig. 4, it is
In 0~t1, and when Q1 conductings, Q2 shut-offs, exchange inductance in positive period and release energy and charged to electric capacity.
Born when AC power AC voltages are transfused to, and in L in the positive negative cycles of N, Q4 power frequencies are closed and Q3 power frequencies are opened.
Exchange negative half-cycle (N phases are more than L phases), Q1 and Q2 HF switches.Current direction is as shown in Figure 5 and Figure 6.In Figure 5, it is in t1
~t2, and when Q1 conductings, Q2 shut-offs, inductance storage energy in exchange negative cycle.In figure 6, be in t1~t2, and Q1 shut-off,
Inductance, which releases energy, when Q2 is turned on, in exchange negative cycle gives electric capacity charging.
As one preferred embodiment, wherein, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 switching frequency is 50kHZ,
So that high frequency hard switching is better achieved.Accordingly, the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 switching frequency is 50HZ.
As one preferred embodiment, wherein, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3 and the 4th
Metal-oxide-semiconductor Q4 is P-channel enhancement type metal-oxide-semiconductor.
As one preferred embodiment, wherein, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 are silicon carbide mos
Pipe.
Specifically, carbofrax material device is anti-when there are more preferable thermal conduction characteristic, voltage endurance, and silicon carbide mos to turn off
To recovery time and reverse recovery current very little, so its turn-off power loss very little, inside junction capacity and the Miller electricity of silicon carbide mos
Hold all very littles, observable index ordinary silicon MOS driving energy consumption is small so it drives, and turn-on consumption is relatively low, carborundum it is pressure-resistant
Characteristic is good, and the performance of anti-input surge voltage is good, and the heatproof of carbofrax material is high, and thermal conduction characteristic is again good, so silicon carbide device
High temperature failure rate it is low, improve circuit in device switching characteristic and reduce switching loss, switching tube select silicon carbide mos pipe,
Totem pillar control mode, can more embody the advantage of silicon carbide mos in the pattern of hard switching.And PFC
Technology is the study hotspot of field of power electronics, and the non-bridge PFC circuits based on silicon carbide device have a good application prospect.Pin
Deep analysis and research has been carried out to its circuit structure and totem pillar control strategy, many advantages of silicon carbide device are utilized
Improve the combination property and efficiency of non-bridge PFC.
Accordingly, the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 is silicon metal-oxide-semiconductor.Q3 and Q4 is ordinary silicon metal-oxide-semiconductor, is reduced into
This.
A kind of charger is also disclosed in the utility model, and the charger includes the pfc circuit as described in right.
Wherein, capacitor C two ends form voltage output end, to export the appropriate voltage value after regulation to circuit downstream,
So that charger has more preferable performance.
The non-bridge PFC circuits topology of charger in this utility model can improve the efficiency of charger, the first device used
Part is fewer than traditional pfc circuit, while reducing the crash rate of component, this circuit topology has good Electro Magnetic Compatibility,
This circuit topology controls for four-quadrant, it is possible to achieve the two-way charging inversion function in charger, with existing technical scheme phase
Than the application of this circuit topology can make charger reduce the volume of complete machine, improve overall efficiency, expand bidirectional charger
Exploitation.
It is described above, embodiment only of the present utility model, but protection domain of the present utility model do not limit to
In this, any one skilled in the art can readily occur in change in the technical scope that the utility model is disclosed
Or replace, it should all cover within protection domain of the present utility model.Therefore, protection domain of the present utility model should be wanted with right
The protection domain asked is defined.
Each embodiment in this specification is described by the way of progressive, what each embodiment was stressed be with
Between the difference of other embodiment, each embodiment identical similar part mutually referring to.
Although having been described for the preferred embodiment of the utility model embodiment, those skilled in the art once learn
Basic creative concept, then can make other change and modification to these embodiments.So, appended claims are intended to solution
It is interpreted as including preferred embodiment and falls into having altered and changing for the utility model scope of embodiments.
Finally, in addition it is also necessary to explanation, in the utility model embodiment, such as first and second or the like relation art
Language is used merely to make a distinction an entity or operation with another entity or operation, and not necessarily requires or imply this
There is any this actual relation or order between a little entities or operation.Moreover, term " comprising ", "comprising" or its
What his variant is intended to including for nonexcludability, so that process, method, article or end including a series of key elements
End equipment not only includes those key elements, but also other key elements including being not expressly set out, or also includes being this mistake
Journey, method, article or the intrinsic key element of terminal device.In the absence of more restrictions, by sentence " including one
It is individual ... " limit key element, it is not excluded that also exist in the process including the key element, method, article or terminal device
Other identical element.
Above-described is preferred embodiment of the present utility model, it should be pointed out that for the ordinary person of the art
For, some improvements and modifications can also be made under the premise of principle described in the utility model is not departed from, these improve and moistened
Decorations are also in protection domain of the present utility model.
Claims (8)
1. a kind of active power corrects pfc circuit, it is characterised in that including：
AC power, inductor, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor of capacitor and HF switch, the 3rd MOS of power frequency switch
Pipe and the 4th metal-oxide-semiconductor；
First metal-oxide-semiconductor connects to form totem pillar output circuit with second metal-oxide-semiconductor, wherein, first metal-oxide-semiconductor
Drain electrode is connected with the drain electrode of the 3rd metal-oxide-semiconductor, and the source electrode of the 3rd metal-oxide-semiconductor is connected with the drain electrode of the 4th metal-oxide-semiconductor, institute
The source electrode for stating the 4th metal-oxide-semiconductor is connected with the source electrode of second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor and first metal-oxide-semiconductor
Source electrode connection；
The first end of the inductor is connected to the first end of the AC power, and the second end of the inductor is connected to described
Between the drain electrode of the source electrode of first metal-oxide-semiconductor and second metal-oxide-semiconductor, the second end of the AC power is connected to the described 3rd
Between the drain electrode of the source electrode of metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, the first end of the capacitor is connected to the 3rd metal-oxide-semiconductor
Drain electrode, the second end of the capacitor is connected to the source electrode of the 4th metal-oxide-semiconductor.
2. pfc circuit according to claim 1, it is characterised in that
When the output voltage of the AC power is in positive half period, the 3rd metal-oxide-semiconductor shut-off, the 4th metal-oxide-semiconductor is led
It is logical；When the output voltage of the AC power is in negative half-cycle, the 3rd metal-oxide-semiconductor shut-off, the 4th metal-oxide-semiconductor is led
It is logical.
3. pfc circuit according to claim 1, it is characterised in that the switch frequency of first metal-oxide-semiconductor and the second metal-oxide-semiconductor
Rate is 50kHZ.
4. pfc circuit according to claim 1, it is characterised in that the switch frequency of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor
Rate is 50HZ.
5. pfc circuit according to claim 1, it is characterised in that first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor
And the 4th metal-oxide-semiconductor be P-channel enhancement type metal-oxide-semiconductor.
6. pfc circuit according to claim 1, it is characterised in that first metal-oxide-semiconductor is with second metal-oxide-semiconductor
Silicon carbide mos pipe.
7. pfc circuit according to claim 1, it is characterised in that the 3rd metal-oxide-semiconductor is with the 4th metal-oxide-semiconductor
Silicon metal-oxide-semiconductor.
8. a kind of charger, it is characterised in that the charger includes the pfc circuit as described in any one of claim 1~7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720081213.0U CN206402101U (en) | 2017-01-22 | 2017-01-22 | A kind of pfc circuit and charger |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720081213.0U CN206402101U (en) | 2017-01-22 | 2017-01-22 | A kind of pfc circuit and charger |
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| CN206402101U true CN206402101U (en) | 2017-08-11 |
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| CN201720081213.0U Active CN206402101U (en) | 2017-01-22 | 2017-01-22 | A kind of pfc circuit and charger |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108696116A (en) * | 2018-06-01 | 2018-10-23 | 广东美的制冷设备有限公司 | Totem pfc circuit, pulse width control method, air conditioner and storage medium |
| CN108736702A (en) * | 2018-06-08 | 2018-11-02 | 邯郸美的制冷设备有限公司 | Totem non-bridge PFC circuits, power supply change-over device and air conditioner |
| CN110661323A (en) * | 2018-06-29 | 2020-01-07 | 比亚迪股份有限公司 | Vehicle-mounted charger of electric vehicle, control method of vehicle-mounted charger and electric vehicle |
| WO2021237699A1 (en) * | 2020-05-29 | 2021-12-02 | 华为数字能源技术有限公司 | Bridgeless power factor correction (pfc) circuit |
-
2017
- 2017-01-22 CN CN201720081213.0U patent/CN206402101U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108696116A (en) * | 2018-06-01 | 2018-10-23 | 广东美的制冷设备有限公司 | Totem pfc circuit, pulse width control method, air conditioner and storage medium |
| CN108736702A (en) * | 2018-06-08 | 2018-11-02 | 邯郸美的制冷设备有限公司 | Totem non-bridge PFC circuits, power supply change-over device and air conditioner |
| CN110661323A (en) * | 2018-06-29 | 2020-01-07 | 比亚迪股份有限公司 | Vehicle-mounted charger of electric vehicle, control method of vehicle-mounted charger and electric vehicle |
| WO2021237699A1 (en) * | 2020-05-29 | 2021-12-02 | 华为数字能源技术有限公司 | Bridgeless power factor correction (pfc) circuit |
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