CN108736702A - Totem non-bridge PFC circuits, power supply change-over device and air conditioner - Google Patents
Totem non-bridge PFC circuits, power supply change-over device and air conditioner Download PDFInfo
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- CN108736702A CN108736702A CN201810591860.5A CN201810591860A CN108736702A CN 108736702 A CN108736702 A CN 108736702A CN 201810591860 A CN201810591860 A CN 201810591860A CN 108736702 A CN108736702 A CN 108736702A
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- bridge arm
- oxide
- semiconductor
- arm metal
- circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
- H02M1/4233—Arrangements for improving power factor of AC input using a bridge converter comprising active switches
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The present invention discloses totem non-bridge PFC circuits, power supply change-over device and air conditioner, the totem non-bridge PFC circuits include at least one upper bridge arm metal-oxide-semiconductor, at least one lower bridge arm metal-oxide-semiconductor, inductor, filter capacitor, and at least one boostrap circuit, each upper bridge arm metal-oxide-semiconductor and a lower bridge arm metal-oxide-semiconductor are connected in series with one switch bridge arm circuit of composition；Boostrap circuit is corresponding with the switch quantity of bridge arm circuit；The output end of driving power circuit is connect with the input terminal of the grid of lower bridge arm metal-oxide-semiconductor and boostrap circuit respectively；The output end of boostrap circuit is connect with the source electrode of upper bridge arm metal-oxide-semiconductor；Wherein, driving power circuit is for driving bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor to be connected；Boostrap circuit constitutes charge circuit to store electric energy when corresponding lower bridge arm metal-oxide-semiconductor is connected with driving power circuit.The present invention solves the problem of that bootstrap capacitor can not charge or undercharge makes bridge arm metal-oxide-semiconductor not to be connected reliably.
Description
Technical field
The present invention relates to power technique fields, more particularly to a kind of totem non-bridge PFC circuits, power supply change-over device and sky
Adjust device.
Background technology
Totem non-bridge PFC circuits are a kind of new-type circuits of replacement conventional rectifier circuit, because rectification damage can be reduced
Consumption, therefore be more and more applied in power technique fields.
Existing totem non-bridge PFC circuits have half bridge loop of upper and lower bridge arm switching tube, in the upper bridge arm switching tube of driving
When usually require floating power supply, and mostly use bootstrap capacitor greatly and provide floating power supply for upper bridge arm switching tube.
It charges under preparation state but this bootstrap capacitor needs to charge in the early stage, if totem is without bridge at this moment
Pfc circuit goes to execute driving upper and lower bridge arm switching tube, and the possible insufficient or high level of charge volume due to bootstrap capacitor is not filled
Point, and cause bridge arm switching tube that can not be connected and make time rectification that can not be carried out with boost action.If in addition, this bootstrap capacitor
It can not charge, charge can also gradually use up, so the time for preparing state will be elongated, go to the electricity of regular event pattern needs
Holding capacity will increase, and cost can also improve.
Invention content
The main object of the present invention is a kind of totem non-bridge PFC circuits of proposition, power supply change-over device and air conditioner, it is intended to
Solve the problems, such as bootstrap capacitor can not charge or undercharge and so that bridge arm metal-oxide-semiconductor is not connected reliably.
To achieve the above object, the present invention proposes a kind of totem non-bridge PFC circuits, the totem non-bridge PFC circuits
Including at least one upper bridge arm metal-oxide-semiconductor, at least one lower bridge arm metal-oxide-semiconductor, inductor, filter capacitor and at least one bootstrapping
Circuit, each upper bridge arm metal-oxide-semiconductor and a lower bridge arm metal-oxide-semiconductor are connected in series with one switch bridge arm circuit of composition；It is described from
The quantity for lifting circuit is corresponding with the switch quantity of bridge arm circuit；
One end incoming transport power supply of the inductor, the other end and the upper bridge arm metal-oxide-semiconductor and the lower bridge arm metal-oxide-semiconductor
Common end connection；
The filter capacitor is arranged in parallel in the both ends of the switch bridge arm circuit；
The output end of the driving power circuit is defeated with the grid of the lower bridge arm metal-oxide-semiconductor and the boostrap circuit respectively
Enter end connection；The output end of the boostrap circuit is connect with the source electrode of the upper bridge arm metal-oxide-semiconductor；
Wherein, the driving power circuit, for driving the upper bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor to be connected；
The boostrap circuit is constituted with the driving power circuit and is charged in the corresponding lower bridge arm metal-oxide-semiconductor conducting
Circuit, to store electric energy.
Optionally, the quantity of the upper bridge arm metal-oxide-semiconductor and the lower bridge arm metal-oxide-semiconductor is two, two upper bridge arms
Metal-oxide-semiconductor is respectively bridge arm metal-oxide-semiconductor on bridge arm metal-oxide-semiconductor and second on first；
Two lower bridge arm metal-oxide-semiconductors are respectively the first lower bridge arm metal-oxide-semiconductor and the second lower bridge arm metal-oxide-semiconductor；
The inductor is arranged in series in bridge arm metal-oxide-semiconductor in the AC power and described second and second lower bridge arm
Between the common end of metal-oxide-semiconductor.
Optionally, bridge arm metal-oxide-semiconductor and the first lower bridge arm metal-oxide-semiconductor are power frequency switching tube on described first, described second
Upper bridge arm metal-oxide-semiconductor and the second lower bridge arm metal-oxide-semiconductor are HF switch pipe.
Optionally, the quantity of the boostrap circuit be two, two boostrap circuits be respectively the first boostrap circuit and
Second boostrap circuit；The output end of first boostrap circuit is connect with the source electrode of bridge arm metal-oxide-semiconductor on described first；Described second
The output end of boostrap circuit is connect with the source electrode of bridge arm metal-oxide-semiconductor on described second.
Optionally, first boostrap circuit include the first diode, first resistor and the first bootstrap capacitor, described first
The anode of diode is connect with the output end of the driving power circuit, and the cathode of first diode is through the first resistor
It is connect with the first end of first bootstrap capacitor；The second end of first bootstrap capacitor is the defeated of first boostrap circuit
Outlet.
Optionally, second boostrap circuit include the second diode, second resistance and the second bootstrap capacitor, described second
The anode of diode is connect with the output end of the driving power circuit, and the cathode of second diode is through the second resistance
It is connect with the first end of second bootstrap capacitor；The second end of second bootstrap capacitor is the defeated of first boostrap circuit
Outlet.
Optionally, the driving power circuit includes the first DC power supply and corresponding each bridge arm metal-oxide-semiconductor setting
Gate driving circuit, the control signal input of each gate driving circuit is used for incoming control signal, each described
The power input of gate driving circuit is connect with first DC power supply；The output end of each gate driving circuit with
The grid of its bridge arm metal-oxide-semiconductor being correspondingly arranged connects.
Optionally, the driving power circuit further includes the current-limiting resistance of corresponding each bridge arm metal-oxide-semiconductor setting, each
The grid that the output end of the gate driving circuit passes through current-limiting resistance bridge arm metal-oxide-semiconductor corresponding with the gate driving circuit
Pole connects.
The present invention also proposes a kind of power supply change-over device, including totem non-bridge PFC circuits as described above.
The present invention also proposes a kind of air conditioner, including totem non-bridge PFC circuits as described above, or including institute as above
The power supply change-over device stated.
Totem non-bridge PFC circuits of the present invention are provided with inductor, filter capacitor, at least one upper bridge arm metal-oxide-semiconductor and extremely
A few lower bridge arm metal-oxide-semiconductor, each upper bridge arm metal-oxide-semiconductor and a lower bridge arm metal-oxide-semiconductor are connected in series with one switch bridge arm electricity of composition
Road, and drive upper bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor to be connected by power driving circuit.The present invention is in each upper bridge arm
Boostrap circuit is arranged in the common end of metal-oxide-semiconductor and lower bridge arm metal-oxide-semiconductor, and described with when the corresponding lower bridge arm metal-oxide-semiconductor is connected
Driving power circuit constitutes charge circuit, to store electric energy, and when upper bridge arm metal-oxide-semiconductor is connected, electric energy is exported supreme bridge arm
The source electrode of metal-oxide-semiconductor, to raise the voltage of upper bridge arm metal-oxide-semiconductor grid, to provide floating power supply for upper bridge arm metal-oxide-semiconductor, in driving
Bridge arm metal-oxide-semiconductor is connected.Boostrap circuit of the present invention can carry out energy storage by power driving circuit when lower bridge arm metal-oxide-semiconductor is connected,
And electric energy is provided in time when lower bridge arm metal-oxide-semiconductor is connected, and it being arranged such so that the energy storage capacity of boostrap circuit is larger without being arranged,
The charging time of boostrap circuit can be shortened, and bootstrapping electricity can be completed during totem non-bridge PFC circuits work
The charge/discharge on road, it is ensured that upper bridge arm metal-oxide-semiconductor is reliably connected.The present invention solves in the process of work, bootstrap capacitor without
Method charge or undercharge and the problem of so that bridge arm metal-oxide-semiconductor is not connected reliably.The present invention is without being arranged larger electrolysis
Capacitance so as to shorten the time that totem non-bridge PFC circuits correctly arrive operating stably, and inputs partly following for AC voltages
Situation etc. after ring, reaches desired actuation time.This invention also solves in totem non-bridge PFC circuits efforts
When, boostrap circuit can not energy storage cause charge to gradually use up, and keep the time of preparation state elongated, and go to regular event pattern
The problem of charging time needed can increase therewith.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art, can be under the premise of not making the creative labor work
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of one embodiment of totem non-bridge PFC circuits of the present invention；
Fig. 2 is the electrical block diagram of one embodiment of totem non-bridge PFC circuits in Fig. 1；
Fig. 3 is energy flow first embodiment schematic diagram when totem non-bridge PFC circuits of the present invention work；
Fig. 4 is energy flow second embodiment schematic diagram when totem non-bridge PFC circuits of the present invention work；
Fig. 5 is energy flow 3rd embodiment schematic diagram when totem non-bridge PFC circuits of the present invention work；
Fig. 6 is energy flow fourth embodiment schematic diagram when totem non-bridge PFC circuits of the present invention work；
Fig. 7 is the 5th embodiment schematic diagram of energy flow when totem non-bridge PFC circuits of the present invention work；
Fig. 8 is energy flow sixth embodiment schematic diagram when totem non-bridge PFC circuits of the present invention work.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art obtained without creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
If it is to be appreciated that related in the embodiment of the present invention directionality instruction (such as up, down, left, right, before and after ...),
Then directionality instruction be only used for explaining relative position relation under a certain particular pose (as shown in the picture) between each component,
Motion conditions etc., if the particular pose changes, directionality instruction also correspondingly changes correspondingly.
If in addition, relating to the description of " first ", " second " etc. in the embodiment of the present invention, it is somebody's turn to do " first ", " second " etc.
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.In addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, when the knot that conflicting or cannot achieve when will be understood that this technical solution occurs in the combination of technical solution
Conjunction is not present, also not the present invention claims protection domain within.
The present invention proposes a kind of totem non-bridge PFC circuits.
In power technique fields, when alternating current is accessed to user terminal, the exchange of alternating current will be converted into direct current
Afterwards namely rectification, it then exports to the load of user, to provide DC power supply power supply for load, and this process is adopted mostly
AC-DC conversions are carried out with the rectifier bridge of rectifier diode composition.But since rectifier bridge only connects in input sine wave voltage
It can be just connected when nearly peak value, therefore result in the serious non-sine of input current journey so that input produces a large amount of harmonic currents
Composition reduces the utilization rate of power grid while having the possibility for potentially interfering other electric appliances.It therefore generally can be after rectifier bridge
Pfc circuit is added by carrying out shaping to input AC electric currents in end, and it is approximate and input voltage same-phase sine to make input current
Wave.Since PFC is normally designed to Width funtion input pattern, in low input, input current can be bigger, works as output work
When rate is bigger, each power device especially current stresses of input rectifying bridge and heat dissipation pressure are particularly evident, and in low electricity
In the case of pressure, High-current output, the conduction voltage drop of rectifier diode is higher, and the loss of output end rectifying tube is larger.
Totem non-bridge PFC circuits, due to that instead of original rectifier circuit, can reduce rectification damage, therefore consumption is got over
It is applied in power technique fields come more.However in based on there is half bridge loop of upper and lower bridge arm switching tube, driving
Floating power supply is needed when upper bridge arm switching tube.To realize that circuit simplifies, the purpose of cost is reduced, majority all uses bootstrap capacitor
Floating power supply is provided for upper bridge arm switching tube.It charges under preparation state however, this bootstrap capacitor needs to charge in the early stage,
If carrying out such driving, the charge volume of bootstrap capacitor is insufficient or high level is insufficient, will cause bridge arm switching tube can not
It is connected and makes time rectification that can not be carried out with boost action.Therefore larger electrolytic capacitor is arranged in normal need so that totem
Non-bridge PFC circuits correctly arrive the time of operating stably, input the situation etc. after the half cycle of AC voltages, reach desired dynamic
Work will take some time.
In addition, to improve the meeting of most of efficiency when underload in non-loaded access, into burst mode, namely
Into in preparation state, if bootstrap capacitor can not charge at this time, charge can also gradually use up, so the time for preparing state will
Elongated, going to the capacitance of regular event pattern needs will increase, and cost can also improve.
To solve the above-mentioned problems, referring to figs. 1 to Fig. 8, in an embodiment of the present invention, the totem non-bridge PFC
Circuit includes at least one upper bridge arm metal-oxide-semiconductor (Q1 or Q3), at least one lower bridge arm metal-oxide-semiconductor (Q2 or Q4), inductor Lin, filter
Wave capacitance Cd1 and at least one boostrap circuit 30, each upper bridge arm metal-oxide-semiconductor and a lower bridge arm metal-oxide-semiconductor series connection connect
Connect one switch bridge arm circuit 10 of composition；The quantity of the boostrap circuit 30 is corresponding with the switch quantity of bridge arm circuit 10；
One end incoming transport power supply AC of the inductor Lin, the other end and the upper bridge arm metal-oxide-semiconductor and the lower bridge arm
The common end of metal-oxide-semiconductor connects；
The filter capacitor Cd1 is arranged in parallel in the both ends of the switch bridge arm circuit 10；
The output end of the driving power circuit 20 respectively with the grid and the boostrap circuit 30 of the lower bridge arm metal-oxide-semiconductor
Input terminal connection；The output end of the boostrap circuit 30 is connect with the source electrode of the upper bridge arm metal-oxide-semiconductor；Wherein,
The driving power circuit 20, for driving the upper bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor to be connected；
The boostrap circuit 30 is constituted in the corresponding lower bridge arm metal-oxide-semiconductor conducting with the driving power circuit 20
Charge circuit, to store electric energy.
Upper bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor can be SiC types MOSFET or upper bridge arm metal-oxide-semiconductor and/or lower bridge
High performance switch pipe that arm metal-oxide-semiconductor can be exceedingly fast for switching speeds such as GaN types MOSFET realizes that the present embodiment is chosen as superjunction
Type high-voltage power MOSFET is realized.
There are two bridge arm circuits, two bridge arm circuits to adopt in whole or in part for totem non-bridge PFC circuits generally tool
It is realized with IGBT, MOSFET constant power switching tube, namely the quantity of switch bridge arm circuit 10 can be one can also be more
It is a, when the quantity of power switch tube is two, two power switch tubes one HF switch bridge arm circuits 10 of composition, and according to
Drive signal carrys out conduction and cut-off, and diode then may be used to realize in another bridge arm circuit.When the quantity of power switch tube is four
When a, two compositions, one HF switch bridge arm circuit 10 in four power switch tubes, other two then forms low frequency afterflow
Switch bridge arm circuit 10.
Wherein, in same switch bridge arm circuit 10, the conducting of upper bridge arm power switch tube and lower bridge arm power switch tube
Or cut-off direction is opposite namely upper bridge arm power switch tube in conducting, lower bridge arm switching tube keeps cut-off state；Or
Person, for lower bridge arm power switch tube in conducting, upper bridge arm switching tube keeps cut-off state.In some apply example, totem is without bridge
Pfc circuit can have multiple totem non-bridge PFC branches, and multiple totem non-bridge PFC branches are interleaved together, to improve work(
Rate is horizontal, and reduces input current ripple.In some embodiments, IGBT, MOSFET constant power switching tube can come with
Body diode, is either parallel with fly-wheel diode body diode or fly-wheel diode can be with high-frequency rectification on-off action.
It should be noted that being usually untotal due in same bridge arm circuit, between upper bridge arm metal-oxide-semiconductor and driving circuit
Ground, and metal-oxide-semiconductor generally wants the voltage for reaching 8~15V on grid source electrode G-S to be just connected.Lower bridge arm metal-oxide-semiconductor is altogether with driving circuit
Ground setting, therefore be easily achieved on grid source electrode G-S and reach conduction voltage drop and be connected.But upper bridge arm metal-oxide-semiconductor and lower bridge arm
Metal-oxide-semiconductor is arranged in series, namely could only be realized " altogether " when lower bridge arm metal-oxide-semiconductor is connected.However in same bridge arm circuit
In, upper and lower bridge arm power switch tube does not allow to simultaneously turn on, therefore when lower bridge arm metal-oxide-semiconductor ends, upper bridge arm metal-oxide-semiconductor
Source terminal is to suspend, and the grid source electrode G-S of upper bridge arm metal-oxide-semiconductor is unable to reach conduction voltage drop and so that going up bridge arm metal-oxide-semiconductor can not lead
It is logical.
To solve the above-mentioned problems, in this implementation, boostrap circuit 30 corresponds to quantity and the position of each upper bridge arm switching tube
Setting, and when lower bridge arm metal-oxide-semiconductor is connected, upper bridge arm metal-oxide-semiconductor cut-off at this time, with lower bridge arm metal-oxide-semiconductor, 20 shape of driving power circuit
At charge circuit, and carry out energy storage；And end in lower bridge arm metal-oxide-semiconductor, and when upper bridge arm metal-oxide-semiconductor is connected, electric energy is exported
The source electrode of supreme bridge arm metal-oxide-semiconductor, to raise the voltage of upper bridge arm metal-oxide-semiconductor grid, to provide floating electricity for upper bridge arm metal-oxide-semiconductor
Source, bridge arm metal-oxide-semiconductor conducting in driving.
Totem non-bridge PFC circuits of the present invention are provided with inductor Lin, filter capacitor Cd1, at least one upper bridge arm MOS
Pipe and at least one lower bridge arm metal-oxide-semiconductor, each upper bridge arm metal-oxide-semiconductor and a lower bridge arm metal-oxide-semiconductor are connected in series with one switch of composition
Bridge arm circuit 10, and drive upper bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor to be connected by power driving circuit.The present invention is each
Boostrap circuit 30 is arranged in the common end of upper bridge arm metal-oxide-semiconductor and lower bridge arm metal-oxide-semiconductor, to be connected in the corresponding lower bridge arm metal-oxide-semiconductor
When, charge circuit is constituted with the driving power circuit 20, it is to store electric energy, and when upper bridge arm metal-oxide-semiconductor is connected, electric energy is defeated
The source electrode for going out supreme bridge arm metal-oxide-semiconductor, to raise the voltage of upper bridge arm metal-oxide-semiconductor grid, to provide floating electricity for upper bridge arm metal-oxide-semiconductor
Source, bridge arm metal-oxide-semiconductor conducting in driving.Boostrap circuit 30 of the present invention can be connected by power driving circuit in lower bridge arm metal-oxide-semiconductor
Shi Jinhang energy storage, and electric energy is provided in time when lower bridge arm metal-oxide-semiconductor is connected, it is arranged such so that the energy storage capacity of boostrap circuit 30
It is larger without being arranged, the charging time of boostrap circuit 30 can be shortened, and during totem non-bridge PFC circuits work
It can complete the charge/discharge of boostrap circuit 30, it is ensured that upper bridge arm metal-oxide-semiconductor is reliably connected.The present invention is solved in work
In the process, bootstrap capacitor can not charge or undercharge and the problem of so that bridge arm metal-oxide-semiconductor is not connected reliably.The present invention without
Larger electrolytic capacitor need to be set, so as to shorten the time that totem non-bridge PFC circuits correctly arrive operating stably, and
The situation etc. after the half cycle of AC voltages is inputted, desired actuation time is reached.This invention also solves in totem without bridge
When pfc circuit efforts, boostrap circuit 30 can not energy storage cause charge to gradually use up, and keep the time of preparation state elongated,
And go to the problem of increasing therewith in charging time of regular event pattern needs.
It is understood that the present invention can also be when not accessing load or between totem non-bridge PFC circuits be operated in
Oscillation mode of having a rest namely intermitten service (Burst Mode Operation) for example load when being in standby, can also root
Lower bridge arm metal-oxide-semiconductor is connected in turn according to work frequency, to charge for boostrap circuit 30 corresponding with upper bridge arm metal-oxide-semiconductor, to ensure certainly
The energy storage state for lifting circuit 30 is fully charged state.
Referring to figs. 1 to Fig. 8, in an alternative embodiment, the quantity of the upper bridge arm metal-oxide-semiconductor and the lower bridge arm metal-oxide-semiconductor
It it is two, two upper bridge arm metal-oxide-semiconductors are respectively bridge arm metal-oxide-semiconductor Q3 on bridge arm metal-oxide-semiconductor Q1 and second on first；
Two lower bridge arm metal-oxide-semiconductors are respectively the first lower bridge arm metal-oxide-semiconductor Q2 and the second lower bridge arm metal-oxide-semiconductor Q4；
The inductor Lin is arranged in series in bridge arm metal-oxide-semiconductor Q3 on the AC power AC and described second and described
Between the common end of two lower bridge arm metal-oxide-semiconductor Q4.
In the present embodiment, two upper bridge arm metal-oxide-semiconductors respectively constitute the upper bridge arm switch of a bridge arm circuit, two lower bridge arms
Metal-oxide-semiconductor respectively constitutes the lower bridge arm switch of a bridge arm circuit, wherein by bridge arm metal-oxide-semiconductor Q1 on first and the first lower bridge arm metal-oxide-semiconductor
The bridge arm circuit that Q2 is constituted is referred to as the first bridge arm circuit；Bridge arm metal-oxide-semiconductor Q3 on second and the second lower bridge arm metal-oxide-semiconductor Q4 are constituted
Bridge arm circuit be referred to as the second bridge arm circuit.Bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 are alternated and are led on first
It is logical, namely when bridge arm metal-oxide-semiconductor Q1 on first is connected, the first lower bridge arm metal-oxide-semiconductor Q2 keeps cut-off state, otherwise in first time bridge
When arm metal-oxide-semiconductor Q2 conducting, then bridge arm metal-oxide-semiconductor Q1 keeps cut-off state on first.And bridge arm metal-oxide-semiconductor Q3 and second on second
Lower bridge arm metal-oxide-semiconductor Q4 alternates conducting, namely when bridge arm metal-oxide-semiconductor Q3 on second is connected, and the second lower bridge arm metal-oxide-semiconductor Q4 is kept
Cut-off state, otherwise in the second lower bridge arm metal-oxide-semiconductor Q4 conducting, then bridge arm metal-oxide-semiconductor Q3 keeps cut-off state on second.Utilize
The alternating break-make of two MOSFET pipes of one bridge arm circuit and two MOSFET pipes alternate conductions of the second bridge arm circuit/cut
Only, it realizes and the convert alternating current for exchanging end input is the boosting rectification of direct current, and it is that DC load is powered to export.
Referring to figs. 1 to Fig. 8, in above-described embodiment, bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor on described first
Q2 is power frequency switching tube, and bridge arm metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 is HF switch pipe on described second.
In the present embodiment, one end of inductor Lin is connect with the zero line side of AC power AC, the other end of inductor Lin
It is connect with the common end of bridge arm metal-oxide-semiconductor Q3 on second and the second lower bridge arm metal-oxide-semiconductor Q4；Alternatively, one end of inductor Lin with exchange
The zero line of power supply AC connects, bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 on the other end of inductor Lin and first
Common end connects.When inductor Lin is arranged in series the zero line side in AC power AC and bridge arm metal-oxide-semiconductor Q3 and second on second
When lower bridge arm metal-oxide-semiconductor Q4, bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 according to work frequency be connected/cut on first
Only, namely with the frequency of 50Hz conduction and cut-off is carried out；Bridge arm metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 are then according to height on second
Frequent rate carries out conduction and cut-off.Wherein, the range of higher frequency could be provided as 15k~40KHz.When inductor Lin series connection is set
Be placed in AC power AC zero line and, on first when the common end of bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2, second
Upper bridge arm metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 according to work frequency carry out conduction and cut-off, namely with the frequency of 50Hz into
Row conduction and cut-off；Bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 then carries out conduction and cut-off according to higher frequency on first.
Wherein, the range of higher frequency could be provided as 15k~40KHz.
Referring to figs. 1 to Fig. 8, in an alternative embodiment, the quantity of the boostrap circuit 30 is two, two bootstrappings
Circuit 30 is respectively the first boostrap circuit 31 and the second boostrap circuit 32；The output end of first boostrap circuit 31 and described the
The source electrode connection of bridge arm metal-oxide-semiconductor Q1 on one；Bridge arm metal-oxide-semiconductor Q3 on the output end of second boostrap circuit 32 and described second
Source electrode connects.
In the present embodiment, corresponding first bridge arm circuit (figure does not indicate) and the second bridge arm circuit (figure does not indicate), bootstrapping electricity
The quantity on road 30 is two, specifically, the first lower bridge arm MOS in the output end and the first bridge arm circuit of the first boostrap circuit 31
The drain electrode of pipe Q2 connects, when the conducting of the first lower bridge arm metal-oxide-semiconductor Q2 in bridge arm circuit on first, the first boostrap circuit 31 with
First lower bridge arm metal-oxide-semiconductor Q2, driving power circuit 20 form charge circuit, realize the storage of electric energy.And in the first bridge arm circuit
In first on bridge arm metal-oxide-semiconductor Q1 conducting when, electric energy is exported to the source electrode of bridge arm metal-oxide-semiconductor Q1 on first, to raise on first
The voltage of bridge arm metal-oxide-semiconductor Q1 grid source electrodes drives bridge arm MOS on first to provide floating power supply for bridge arm metal-oxide-semiconductor Q1 on first
Pipe Q1 conductings.The output end of second boostrap circuit 32 is connect with the drain electrode of bridge arm metal-oxide-semiconductor Q3 on second in the second bridge arm circuit,
When the conducting of the second lower bridge arm metal-oxide-semiconductor Q4 in bridge arm circuit on second, the second boostrap circuit 32 and the second lower bridge arm metal-oxide-semiconductor
Q4, driving power circuit 20 form charge circuit, realize the storage of electric energy.And bridge arm on second in the second bridge arm circuit
When metal-oxide-semiconductor Q3 conductings, electric energy is exported to the source electrode of bridge arm metal-oxide-semiconductor Q3 on second, to raise bridge arm metal-oxide-semiconductor Q3 grids on second
Voltage, to provide floating power supply for bridge arm metal-oxide-semiconductor Q3 on second, bridge arm metal-oxide-semiconductor Q3 is connected in driving second.
Referring to figs. 1 to Fig. 8, further, in above-described embodiment, first boostrap circuit 31 includes the first diode
The anode of Db1, first resistor Rb1 and the first bootstrap capacitor Cb1, the first diode Db1 and the driving power circuit 20
Output end connection, the cathode of the first diode Db1 is through the first resistor Rb1's and the first bootstrap capacitor Cb1
First end connects；The second end of the first bootstrap capacitor Cb1 is the output end of first boostrap circuit 31.
In the present embodiment, the parameter of first resistor Rb1 and the first bootstrap capacitor Cb1 can be according to bridge arm metal-oxide-semiconductors on first
The switching frequency of Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 are set.Wherein, the capacitance C of the first capacitance can be calculated according to formula (1)
,
C=I × T1/ Δs V (1)；Wherein, I is the driving current for being input to bridge arm metal-oxide-semiconductor grid, and T1 is bridge on first
Maximum on-state (ON) pulsewidth of arm metal-oxide-semiconductor Q1, Δ V are the discharge voltage allowed.The capacitance of first bootstrap capacitor Cb1 is preferably
10~50 μ F.
The common end of bridge arm metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 are pulled low because lower bridge arm metal-oxide-semiconductor is connected on first
When to close to ground potential GND, power driving circuit can give the first bootstrap capacitor by first resistor Rb1 and the first diode Db1
Cb1 charges.When bridge arm metal-oxide-semiconductor Q1 is connected on first, bridge arm metal-oxide-semiconductor Q1's and the first lower bridge arm metal-oxide-semiconductor Q2 is public on first
After end rises to DC bus-bar voltage, the first diode Db1 reversely ends, by DC bus-bar voltage and driving power circuit 20
Isolation isolation is carried out, to prevent the high pressure string of DC bus side from burning out component to 20 low-pressure side of driving power circuit.This
When the first bootstrap capacitor Cb1 electric discharge, provide driving voltage to the grid of bridge arm metal-oxide-semiconductor Q1 on first.The bridge arm metal-oxide-semiconductor on first
When the public terminal voltage of Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 are pulled low again, the first bootstrap capacitor Cb1 will be again by driving electricity
Source circuit 20 charges to supplement the electric energy discharged during bridge arm metal-oxide-semiconductor Q1 conductings on first.In this way, utilizing bridge arm on first
The level of the common end of metal-oxide-semiconductor Q1 and the first lower bridge arm metal-oxide-semiconductor Q2 is ceaselessly swung between low and high level, you can completes first
The charge/discharge of boostrap circuit 31, the voltage of the first bootstrap capacitor Cb1 based on bridge arm metal-oxide-semiconductor Q1 source voltages on first and it is upper and lower
It floats.
Referring to figs. 1 to Fig. 8, further, in above-described embodiment, second boostrap circuit 32 includes the second diode
The anode of Db2, second resistance Rb2 and the second bootstrap capacitor Cb2, the second diode Db2 and the driving power circuit 20
Output end connection, the cathode of the second diode Db2 is through the second resistance Rb2's and the second bootstrap capacitor Cb2
First end connects；The second end of the second bootstrap capacitor Cb2 is the output end of first boostrap circuit 31.
In the present embodiment, the parameter of second resistance Rb2 and the second bootstrap capacitor Cb2 can be according to bridge arm metal-oxide-semiconductors on second
The switching frequency of Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 are set.Wherein, the capacitance C of the second capacitance can be calculated according to formula (1)
,
C=I × T1/ Δs V (1)；Wherein, I is the driving current for being input to bridge arm metal-oxide-semiconductor grid, and T1 is bridge on second
Maximum on-state (ON) pulsewidth of arm metal-oxide-semiconductor Q3, Δ V are the discharge voltage allowed.The capacitance of second bootstrap capacitor Cb2 is preferably
50~100 μ F.
The common end of bridge arm metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 are pulled low because lower bridge arm metal-oxide-semiconductor is connected on second
When to close to ground potential GND, power driving circuit can give the second bootstrap capacitor by second resistance Rb2 and the second diode Db2
Cb2 charges.When bridge arm metal-oxide-semiconductor Q3 is connected on second, bridge arm metal-oxide-semiconductor Q3's and the second lower bridge arm metal-oxide-semiconductor Q4 is public on second
After end rises to DC bus-bar voltage, the second diode Db2 reversely ends, by DC bus-bar voltage and driving power circuit 20
Isolation isolation is carried out, to prevent the high pressure string of DC bus side from burning out component to 20 low-pressure side of driving power circuit.This
When the second bootstrap capacitor Cb2 electric discharge, provide driving voltage to the grid of bridge arm metal-oxide-semiconductor Q3 on second.The bridge arm metal-oxide-semiconductor on second
When the public terminal voltage of Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 are pulled low again, the second bootstrap capacitor Cb2 will be again by driving electricity
Source circuit 20 charges to supplement the electric energy discharged during bridge arm metal-oxide-semiconductor Q3 conductings on second.In this way, utilizing bridge arm on second
The level of the common end of metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 is ceaselessly swung between low and high level, you can completes second
The charge/discharge of boostrap circuit 32, the voltage of the second bootstrap capacitor Cb2 based on bridge arm metal-oxide-semiconductor Q3 source voltages on second and it is upper and lower
It floats.
Referring to figs. 1 to Fig. 8, in above-described embodiment, the first diode Db1 and the second diode Db2 are female for isolated DC
The effect of line high pressure and driving power low pressure, to avoid the electronics member in the high pressure damage driving power circuit 20 on DC bus
Device.Wherein, the electric current that above-mentioned diode is born is the product of the gate charge and switching frequency of corresponding upper bridge arm metal-oxide-semiconductor, therefore
In the present embodiment, high pressure resistant, and small ultrafast extensive of reverse leakage current may be used in the first diode Db1 and the second diode Db2
Multiple diode, to reduce loss of charge.
First resistor Rb1 and second resistance Rb2 is respectively used to the change rate of limitation voltage, to ensure corresponding bootstrap capacitor
It can charge in lower bridge arm metal-oxide-semiconductor minimum turn-on time.
Referring to figs. 1 to Fig. 8, in an alternative embodiment, the driving power circuit 20 include the first DC power supply VCC with
And the gate driving circuit (figure does not indicate) of corresponding each bridge arm metal-oxide-semiconductor setting, the control of each gate driving circuit
Signal input part processed is used for incoming control signal, the power input of each gate driving circuit and first direct current
Source VCC connections；The grid of the bridge arm metal-oxide-semiconductor of the corresponding setting of output end of each gate driving circuit connects.
In the present embodiment, gate driving IC may be used to realize in gate driving circuit, can also use by operation amplifier
The discrete element group such as device at driving circuit realize that the first DC power supply VCC is used to provide power supply for gate driving circuit electric
Pressure.The output voltage values of first DC power supply VCC can be 3.3V, 5V, specifically can be according to the driving voltage of gate driving IC
It is arranged, is not herein limited.The output end of first DC power supply VCC is also connect with the input terminal of each boostrap circuit 30, with
When lower bridge arm metal-oxide-semiconductor is connected, charge power supply is provided for corresponding boostrap circuit 30.The control letter that gate driving circuit receives
It number can be that peripheral control unit provides, can also be that user passes through host computer or the control signal of software program input, the grid
Pole driving circuit is converted to corresponding pwm signal or drive signal after receiving the control signal, by control signal, to drive
Dynamic corresponding metal-oxide-semiconductor work.
Based on above-described embodiment, the driving power circuit 20 still further comprises corresponding each bridge arm metal-oxide-semiconductor and sets
The current-limiting resistance (R11, R12, R21, R22) set, each current-limiting resistance are arranged in series in the defeated of a gate driving circuit
Outlet is connect with a bridge arm metal-oxide-semiconductor.
In the present embodiment, current-limiting resistance is arranged in series between gate driving circuit and bridge arm metal-oxide-semiconductor, for preventing grid
The electric current of driving circuit output is excessive and burns bridge arm metal-oxide-semiconductor.
In order to preferably illustrate the inventive concept of the present invention, below in conjunction with Fig. 1 to Fig. 8, to totem non-bridge PFC of the present invention
The operation principle of circuit illustrates：
In power frequency positive half period, bridge arm metal-oxide-semiconductor Q1 maintains conducting state, the first lower bridge arm metal-oxide-semiconductor Q2 to maintain on first
Cut-off state, bridge arm metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 is with higher frequency alternate conduction/cut-off on second.
With reference to Fig. 3, when the second lower bridge arm metal-oxide-semiconductor Q4 conductings, bridge arm metal-oxide-semiconductor Q3 cut-offs on second, electric current is from alternating current
The zero line of source AC exports, followed by bridge arm metal-oxide-semiconductor Q1, load (filter capacitor Cd1), the second lower bridge arm metal-oxide-semiconductor on first
The zero line side (dotted line circuit) of AC power AC is returned to after Q4 and inductor Lin, AC power AC and inductor Lin pass through first
Upper bridge arm metal-oxide-semiconductor Q1 and the second lower bridge arm metal-oxide-semiconductor Q4 output energy are load supplying, while providing electric energy for filter capacitor Cd1,
So that filter capacitor Cd1 carries out charging energy-storing.During this, the electric energy load of the first bootstrap capacitor Cb1 is in gate driving electricity
Between the power end and ground terminal on road, to raise the gate drive voltage of bridge arm metal-oxide-semiconductor Q1 on first, to ensure bridge arm on first
Metal-oxide-semiconductor Q1 is reliably connected.
Referring to Fig. 4, when bridge arm metal-oxide-semiconductor Q3 is connected on second, the second lower bridge arm metal-oxide-semiconductor Q4 cut-offs, AC power AC's
Electric current is exported from the zero line of AC power AC, successively bridge arm metal-oxide-semiconductor Q1, bridge arm metal-oxide-semiconductor Q3 and inductance on second from first
Return to the zero line side (dotted line circuit) of AC power AC after device Lin stream, AC power AC passes through bridge arm metal-oxide-semiconductor Q1 on first and the
Bridge arm metal-oxide-semiconductor Q3 charges to inductor Lin to complete the energy storage of inductor Lin on two, meanwhile, DC load R1 passes through filtered electrical
Hold Cd1 to be powered.During this, the load of the electric energy of the first bootstrap capacitor Cb1 gate driving circuit power end with connect
Between ground terminal, to raise the gate drive voltage of bridge arm metal-oxide-semiconductor Q1 on first, to ensure that bridge arm metal-oxide-semiconductor Q1 is reliably led on first
It is logical.
In power frequency negative half-cycle, the first lower bridge arm metal-oxide-semiconductor Q2 maintains conducting state, and bridge arm metal-oxide-semiconductor Q1 is maintained on first
Cut-off state, bridge arm metal-oxide-semiconductor Q3 and the second lower bridge arm metal-oxide-semiconductor Q4 is with higher frequency alternate conduction/cut-off on second.
Referring to Fig. 5, when bridge arm metal-oxide-semiconductor Q3 is connected on second, the second lower bridge arm metal-oxide-semiconductor Q4 cut-offs, AC power AC's
Electric current is exported from the zero line side of AC power AC, successively through bridge arm metal-oxide-semiconductor Q3, load (filter capacitor on inductor Lin, second
Cd1) and the first lower bridge arm metal-oxide-semiconductor Q2 returns to the zero line (dotted line circuit) of AC power AC, AC power AC and inductor Lin
It is load supplying to export energy by bridge arm metal-oxide-semiconductor Q3 on second and the first lower bridge arm metal-oxide-semiconductor Q2, while being filter capacitor Cd1
Electric energy is provided, so that filter capacitor Cd1 carries out charging energy-storing.In this process, when the first lower bridge arm metal-oxide-semiconductor Q2 conductings, the
The electric current of one DC power supply VCC is after the output of the positive terminal of the first DC power supply VCC, through the first diode Db1, first resistor
Rb1, the first bootstrap capacitor Cb1 and the first lower bridge arm metal-oxide-semiconductor Q2 return to the negative pole end (side circuit) of the first DC power supply VCC,
Complete the charging energy-storing of the first bootstrap capacitor Cb1.
Referring to Fig. 6, when the second lower bridge arm metal-oxide-semiconductor Q4 conductings, bridge arm metal-oxide-semiconductor Q3 cut-offs on second, AC power AC's
Electric current is exported from the zero line side of AC power AC, successively through inductor Lin, the second lower bridge arm metal-oxide-semiconductor Q4 and the first lower bridge arm MOS
Zero line (dotted line circuit) the AC power AC that pipe Q2 returns to AC power AC passes through the first lower bridge arm metal-oxide-semiconductor Q2 and second time bridge
Arm metal-oxide-semiconductor Q4 charges to inductor Lin to complete the energy storage of inductor Lin, at this point, filter capacitor Cd1 is powered to load.
In this process, when the first lower bridge arm metal-oxide-semiconductor Q2 conductings, the electric current of the first DC power supply VCC is from the first DC power supply VCC's
After positive terminal output, returned through the first diode Db1, first resistor Rb1, the first bootstrap capacitor Cb1 and the first lower bridge arm metal-oxide-semiconductor Q2
To the negative pole end (side circuit) of the first DC power supply VCC, the charging energy-storing of the first bootstrap capacitor Cb1 is completed.
It is above-mentioned during bridge arm metal-oxide-semiconductor Q3 on second and the second lower bridge arm metal-oxide-semiconductor Q4 are connected with higher frequency,
When two lower bridge arm metal-oxide-semiconductor Q4 conductings, the second bootstrap capacitor Cb2 passes through the first DC power supply VCC, the second diode Db2, the second electricity
Resistance Rb2 and the second lower bridge arm metal-oxide-semiconductor Q4 forms charge circuit (figure does not indicate) and carries out energy storage, and the bridge arm metal-oxide-semiconductor Q3 on second
When conducting, the electric energy of the second bootstrap capacitor Cb2 loads between the power end and ground terminal of gate driving circuit, to raise second
The gate drive voltage of upper bridge arm metal-oxide-semiconductor Q3, to ensure that bridge arm metal-oxide-semiconductor Q3 is reliably connected on second.
Load is not accessed in the output end of totem non-bridge PFC circuits, or when load is in standby, at this time totem
Column non-bridge PFC circuits are operated in burst mode, under burst mode, bridge on bridge arm metal-oxide-semiconductor Q1 and second on first
Arm metal-oxide-semiconductor Q3 is typically in cut-off state, and the first lower bridge arm metal-oxide-semiconductor Q2 and the second lower bridge arm metal-oxide-semiconductor Q4 are according to work frequency wheel
Conductance is logical.
Referring to Fig. 7, in power frequency positive half period, the second lower bridge arm metal-oxide-semiconductor Q4 conductings, the first lower bridge arm metal-oxide-semiconductor Q2 cut-offs,
The electric current of AC power AC from the zero line of AC power AC export, successively from first the fly-wheel diode of bridge arm metal-oxide-semiconductor Q1,
Zero line side (the dotted line of AC power AC is returned to after load (filter capacitor Cd1), the second lower bridge arm metal-oxide-semiconductor Q4 and inductor Lin streams
Circuit), AC power AC is exported by bridge arm metal-oxide-semiconductor Q1 on first and the second lower bridge arm metal-oxide-semiconductor Q4, to be filter capacitor
Cd1 provides electric energy, so that filter capacitor Cd1 carries out charging energy-storing.In this process, when the second lower bridge arm metal-oxide-semiconductor Q4 conductings,
The electric current of first DC power supply VCC is after the output of the positive terminal of the first DC power supply VCC, through the second diode Db2, second resistance
Rb2, the second bootstrap capacitor Cb2 and the first lower bridge arm metal-oxide-semiconductor Q2 return to the negative pole end (side circuit) of the first DC power supply VCC,
Complete the charging energy-storing of the second bootstrap capacitor Cb2.
Referring to Fig. 8, in power frequency negative half-cycle, the first lower bridge arm metal-oxide-semiconductor Q2 conductings, the second lower bridge arm metal-oxide-semiconductor Q4 cut-offs,
The electric current of AC power AC is exported from the zero line side of AC power AC, successively from bridge arm metal-oxide-semiconductor Q3Q1 on inductor Lin, second
Fly-wheel diode, the firewire of AC power AC is returned to after filter capacitor Cd1 and the first lower bridge arm metal-oxide-semiconductor Q2 inductors Lin streams
It holds in (dotted line circuit), AC power AC is exported by bridge arm metal-oxide-semiconductor Q1 on first and the second lower bridge arm metal-oxide-semiconductor Q4, to be filter
Wave capacitance Cd1 provides electric energy, so that filter capacitor Cd1 carries out charging energy-storing.In this process, the first lower bridge arm metal-oxide-semiconductor Q2
When conducting, the electric current of the first DC power supply VCC after the output of the positive terminal of the first DC power supply VCC, through the first diode Db1,
The negative pole end that first resistor Rb1, the first bootstrap capacitor Cb1 and the first lower bridge arm metal-oxide-semiconductor Q2 return to the first DC power supply VCC is (real
Line loop), complete the charging energy-storing of the first bootstrap capacitor Cb1.
The present invention also proposes a kind of power supply change-over device, including totem non-bridge PFC circuits as described above.The totem
The detailed construction of non-bridge PFC circuits can refer to above-described embodiment, and details are not described herein again；It is understood that due in the present invention
Above-mentioned totem non-bridge PFC circuits are used in power supply change-over device, therefore, the embodiment of power supply change-over device of the present invention includes
Whole technical solutions of above-mentioned totem non-bridge PFC circuits whole embodiments, and the technique effect reached is also identical,
This is repeated no more.
The foregoing is merely the preferred embodiment of the present invention, are not intended to limit the scope of the invention, every at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
In the scope of patent protection that other related technical areas are included in the present invention.
Claims (10)
1. a kind of totem non-bridge PFC circuits, which is characterized in that the totem non-bridge PFC circuits include at least one upper bridge
Arm metal-oxide-semiconductor, at least one lower bridge arm metal-oxide-semiconductor, inductor, filter capacitor and at least one boostrap circuit, each upper bridge
Arm metal-oxide-semiconductor and a lower bridge arm metal-oxide-semiconductor are connected in series with one switch bridge arm circuit of composition；The quantity of the boostrap circuit with it is described
The quantity for switching bridge arm circuit corresponds to；
One end incoming transport power supply of the inductor, the public affairs of the other end and the upper bridge arm metal-oxide-semiconductor and the lower bridge arm metal-oxide-semiconductor
End connection altogether；
The filter capacitor is arranged in parallel in the both ends of the switch bridge arm circuit；
The output end of the driving power circuit respectively with the grid of the lower bridge arm metal-oxide-semiconductor and the input terminal of the boostrap circuit
Connection；The output end of the boostrap circuit is connect with the source electrode of the upper bridge arm metal-oxide-semiconductor；
Wherein, the driving power circuit, for driving the upper bridge arm metal-oxide-semiconductor and/or lower bridge arm metal-oxide-semiconductor to be connected；
The boostrap circuit charges back in the corresponding lower bridge arm metal-oxide-semiconductor conducting with driving power circuit composition
Road, to store electric energy.
2. totem non-bridge PFC circuits as described in claim 1, which is characterized in that the upper bridge arm metal-oxide-semiconductor and the lower bridge
The quantity of arm metal-oxide-semiconductor is two, and two upper bridge arm metal-oxide-semiconductors are respectively bridge arm MOS on bridge arm metal-oxide-semiconductor and second on first
Pipe；
Two lower bridge arm metal-oxide-semiconductors are respectively the first lower bridge arm metal-oxide-semiconductor and the second lower bridge arm metal-oxide-semiconductor；
The inductor is arranged in series in bridge arm metal-oxide-semiconductor in the AC power and described second and the second lower bridge arm MOS
Between the common end of pipe.
3. totem non-bridge PFC circuits as claimed in claim 2, which is characterized in that bridge arm metal-oxide-semiconductor and described on described first
First lower bridge arm metal-oxide-semiconductor is power frequency switching tube, and bridge arm metal-oxide-semiconductor and the second lower bridge arm metal-oxide-semiconductor are opened for high frequency on described second
Guan Guan.
4. totem non-bridge PFC circuits as claimed in claim 2, which is characterized in that the quantity of the boostrap circuit is two,
Two boostrap circuits are respectively the first boostrap circuit and the second boostrap circuit；The output end of first boostrap circuit and institute
State the source electrode connection of bridge arm metal-oxide-semiconductor on first；The source of bridge arm metal-oxide-semiconductor on the output end of second boostrap circuit and described second
Pole connects.
5. totem non-bridge PFC circuits as claimed in claim 4, which is characterized in that first boostrap circuit includes first
Diode, first resistor and the first bootstrap capacitor, the output end of the anode of first diode and the driving power circuit
Connection, the cathode of first diode are connect through the first resistor with the first end of first bootstrap capacitor；Described
The second end of one bootstrap capacitor is the output end of first boostrap circuit.
6. totem non-bridge PFC circuits as claimed in claim 4, which is characterized in that second boostrap circuit includes second
Diode, second resistance and the second bootstrap capacitor, the output end of the anode of second diode and the driving power circuit
Connection, the cathode of second diode are connect through the second resistance with the first end of second bootstrap capacitor；Described
The second end of two bootstrap capacitors is the output end of second boostrap circuit.
7. the totem non-bridge PFC circuits as described in claim 2 to 6 any one, which is characterized in that the driving power electricity
Road includes that the first DC power supply and the gate driving circuit of corresponding each bridge arm metal-oxide-semiconductor setting, each grid drive
The control signal input of dynamic circuit is used for incoming control signal, the power input of each gate driving circuit with it is described
First DC power supply connects；The grid of the bridge arm metal-oxide-semiconductor of the corresponding setting of output end of each gate driving circuit connects
It connects.
8. the totem non-bridge PFC circuits as described in right wants 7, which is characterized in that the driving power circuit further includes corresponding to
The output end of the current-limiting resistance of each bridge arm metal-oxide-semiconductor setting, each gate driving circuit passes through a current limliting electricity
The grid connection of resistance bridge arm metal-oxide-semiconductor corresponding with the gate driving circuit.
9. a kind of power supply change-over device, which is characterized in that include the totem as described in claim 1 to 8 any one without bridge
Pfc circuit.
10. a kind of air conditioner, which is characterized in that include the totem non-bridge PFC electricity as described in claim 1 to 8 any one
Road, or include the power supply change-over device as described in right wants 9.
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| CN110165883A (en) * | 2019-06-21 | 2019-08-23 | 海信（广东）空调有限公司 | A kind of non-bridge PFC circuits and frequency conversion product |
| CN110212749A (en) * | 2019-06-21 | 2019-09-06 | 海信（广东）空调有限公司 | A kind of PFC module |
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| CN112787502A (en) * | 2020-12-29 | 2021-05-11 | 阳光电源股份有限公司 | Bridge system and control method thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163912A (en) * | 2010-02-16 | 2011-08-24 | 三菱电机株式会社 | Semiconductor device |
| CN103683871A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge drive circuit |
| CN204304810U (en) * | 2014-10-30 | 2015-04-29 | 深圳市盛弘电气有限公司 | A kind of bridge circuit and drive circuit thereof |
| CN106602900A (en) * | 2015-10-19 | 2017-04-26 | 中兴通讯股份有限公司 | High-low-side bootstrapped drive control method and apparatus |
| CN106685194A (en) * | 2017-01-05 | 2017-05-17 | 江苏中科君芯科技有限公司 | Bootstrap circuit used in IPM motor driving application |
| CN206402101U (en) * | 2017-01-22 | 2017-08-11 | 北京新能源汽车股份有限公司 | A kind of pfc circuit and charger |
| US20180076712A1 (en) * | 2016-09-09 | 2018-03-15 | Kabushiki Kaisha Toshiba | Switching device and power supply circuit |
-
2018
- 2018-06-08 CN CN201810591860.5A patent/CN108736702A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163912A (en) * | 2010-02-16 | 2011-08-24 | 三菱电机株式会社 | Semiconductor device |
| CN103683871A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge drive circuit |
| CN204304810U (en) * | 2014-10-30 | 2015-04-29 | 深圳市盛弘电气有限公司 | A kind of bridge circuit and drive circuit thereof |
| CN106602900A (en) * | 2015-10-19 | 2017-04-26 | 中兴通讯股份有限公司 | High-low-side bootstrapped drive control method and apparatus |
| US20180076712A1 (en) * | 2016-09-09 | 2018-03-15 | Kabushiki Kaisha Toshiba | Switching device and power supply circuit |
| CN106685194A (en) * | 2017-01-05 | 2017-05-17 | 江苏中科君芯科技有限公司 | Bootstrap circuit used in IPM motor driving application |
| CN206402101U (en) * | 2017-01-22 | 2017-08-11 | 北京新能源汽车股份有限公司 | A kind of pfc circuit and charger |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109149977B (en) * | 2017-06-27 | 2020-08-04 | 全汉企业股份有限公司 | Rectifier and related rectifying circuit |
| CN109149977A (en) * | 2017-06-27 | 2019-01-04 | 全汉企业股份有限公司 | Rectifier and related rectification circuit |
| CN109951183A (en) * | 2019-03-07 | 2019-06-28 | 华为技术有限公司 | A kind of chip, signal shift circuit and electronic equipment |
| CN111817546A (en) * | 2019-04-10 | 2020-10-23 | 群光电能科技股份有限公司 | Totem-pole bridgeless power factor conversion device and operation method thereof |
| CN111817546B (en) * | 2019-04-10 | 2021-07-13 | 群光电能科技股份有限公司 | Totem-pole bridgeless power factor conversion device and operation method thereof |
| CN112019026A (en) * | 2019-05-31 | 2020-12-01 | 广东美的制冷设备有限公司 | Operation control method, device, circuit, household appliance and computer storage medium |
| CN112019026B (en) * | 2019-05-31 | 2022-04-29 | 广东美的制冷设备有限公司 | Operation control method, device, circuit, household appliance and computer storage medium |
| CN110212749B (en) * | 2019-06-21 | 2022-03-04 | 海信（广东）空调有限公司 | PFC module |
| CN110165883A (en) * | 2019-06-21 | 2019-08-23 | 海信（广东）空调有限公司 | A kind of non-bridge PFC circuits and frequency conversion product |
| CN110212749A (en) * | 2019-06-21 | 2019-09-06 | 海信（广东）空调有限公司 | A kind of PFC module |
| CN112440768B (en) * | 2019-09-05 | 2022-07-15 | 比亚迪股份有限公司 | Charging control method, charging control module and storage medium thereof |
| CN112440768A (en) * | 2019-09-05 | 2021-03-05 | 比亚迪股份有限公司 | Charging control method, charging control module and storage medium thereof |
| CN112787502A (en) * | 2020-12-29 | 2021-05-11 | 阳光电源股份有限公司 | Bridge system and control method thereof |
| WO2022227417A1 (en) * | 2021-04-25 | 2022-11-03 | 华为数字能源技术有限公司 | Control system and method for totem-pole power factor correction circuit, and power adapter |
| WO2023131191A1 (en) * | 2022-01-07 | 2023-07-13 | 宁德时代新能源科技股份有限公司 | Bootstrap circuit driving method and device, controller, and power utilization system |
| CN116404864A (en) * | 2023-06-07 | 2023-07-07 | 西南交通大学 | Power decoupling step-up and step-down common-ground power factor correction method and topological structure |
| CN116404864B (en) * | 2023-06-07 | 2023-08-08 | 西南交通大学 | Power decoupling step-up and step-down common-ground power factor correction method and topological structure |
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