CN206401032U - A kind of protection circuit of FLASH abnormity of power supply down Monitor Unit - Google Patents
A kind of protection circuit of FLASH abnormity of power supply down Monitor Unit Download PDFInfo
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- CN206401032U CN206401032U CN201621460369.1U CN201621460369U CN206401032U CN 206401032 U CN206401032 U CN 206401032U CN 201621460369 U CN201621460369 U CN 201621460369U CN 206401032 U CN206401032 U CN 206401032U
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Abstract
The utility model is related to a kind of protection circuit of FLASH abnormity of power supply down Monitor Unit, including voltage monitoring module, comparison module and FLASH composite modules, the output end of voltage monitoring module connects the input of comparison module, the output end of comparison module connects the input of FLASH composite modules, voltage monitoring module includes voltage monitoring chip U1, resistance R1 and electric capacity C1, voltage monitoring chip U1 RESET pin connection resistance R1 one end, voltage monitoring chip U1 VCC pin connect power vd D and electric capacity C1 one end respectively, voltage monitoring chip U1 GND pin ground connection, electric capacity C1 other end ground connection.When abnormity of power supply power down; observation circuit can be before supply voltage be less than FLASH normal working voltages directly by FLASH write-protects; so as to greatly reduce communication time of the controller by software processing, FLASH power down in read-write can be effectively prevented to be caused damage.
Description
Technical field
The utility model belongs to power protection（Monitoring）, technical field of data storage, more particularly to a kind of FLASH power supplys are different
The protection circuit of normal down Monitor Unit.
Background technology
The application of embedded OS, makes the read-write of data be completed by way of file.With the mode of file read-write
Peration data, is typically stored data in the storage device of volatibility, such as NOR FLASH, NAND in program operation
FLASH etc., when system exception power down, data of these storages will lose, it is more serious in the case of can damage FLASH, because
And, it is necessary to increase power-down protection circuit in circuit design.
Utility model content
The purpose of this utility model is to provide a kind of protection circuit of FLASH abnormity of power supply down Monitor Unit, it is intended to solve
The technical problem that the FLASH occurred when FLASH abnormity of power supply power down is damaged.
The utility model is achieved in that a kind of protection circuit of FLASH abnormity of power supply down Monitor Unit, the protection electricity
Road includes voltage monitoring module, comparison module and FLASH composite modules, and the output end of the voltage monitoring module connects the ratio
Compared with the input of module, the output end of the comparison module connects the input of the FLASH composite modules, the voltage monitoring
Module includes voltage monitoring chip U1, resistance R1 and electric capacity C1, the voltage monitoring chip U1 RESET pin connect the resistance
R1 one end, the VCC pin of the voltage monitoring chip U1 connect power vd D and electric capacity C1 one end, the voltage monitoring respectively
Chip U1 GND pin ground connection, the other end ground connection of the electric capacity C1.
Further technical scheme of the present utility model is：The comparison module includes comparator U2 and electric capacity C2, the ratio
Negative input compared with device U2 connects the other end of the resistance R1, and the VCC pin of the comparator U2 connect the electric capacity C2's respectively
One end and power vd D, the comparator U2 GND pin ground connection, the other end ground connection of the electric capacity C2.
Further technical scheme of the present utility model is：The FLASH composite modules include FLASH chips U3 and resistance
R2, the FLASH chips U3 WP pin connect one end of the resistance R2 and the output end of the comparator U2 respectively, described
FLASH chips U3 VDD pin connection power vd D, the resistance R2 other end ground connection.
Further technical scheme of the present utility model is：The comparator U2 is used and gate circuit.
Further technical scheme of the present utility model is：The capacitance of the electric capacity C1 and electric capacity C2 are 100nF farad
Electric capacity.
Further technical scheme of the present utility model is：The resistance of the resistance R1 is 0R, and the resistance of the resistance R2 is
4.7K。
The beneficial effects of the utility model are：When abnormity of power supply power down, observation circuit can directly by FLASH write-protects,
So as to reduce the communication time that microprocessor is controlled by software, it can effectively prevent that FLASH power down in read-write from being made
Into damage.
Brief description of the drawings
Fig. 1 is the schematic diagram for the FLASH abnormity of power supply down Monitor Unit protection circuits that the utility model embodiment is provided.
Embodiment
Fig. 1 shows the protection circuit for the FLASH abnormity of power supply down Monitor Units that the utility model is provided, the protection circuit
Including voltage monitoring module, comparison module and FLASH composite modules, the output end of the voltage monitoring module connects the comparison
The input of module, the output end of the comparison module connects the input of the FLASH composite modules, the voltage monitoring mould
Block includes voltage monitoring chip U1, resistance R1 and electric capacity C1, the voltage monitoring chip U1 RESET pin connect the resistance R1
One end, the VCC pin of the voltage monitoring chip U1 connect power vd D and electric capacity C1 one end, the voltage monitoring core respectively
Piece U1 GND pin ground connection, the other end ground connection of the electric capacity C1.
The comparison module includes comparator U2 and electric capacity C2, the comparator U2 negative input connect the resistance R1's
The other end, the VCC pin of the comparator U2 connect one end and the power vd D, the GND of the comparator U2 of the electric capacity C2 respectively
Pin is grounded, the other end ground connection of the electric capacity C2.
The FLASH composite modules include FLASH chips U3 and resistance R2, the FLASH chips U3 WP pin difference
Connect one end of the resistance R2 and the output end of the comparator U2, the VDD pin connection power supply of the FLASH chips U3
VDD, the resistance R2 other end ground connection.
The comparator U2 is used and gate circuit.
The capacitance of the electric capacity C1 and electric capacity C2 are 100nF farad capacitor.
The resistance of the resistance R1 is 0R, and the resistance of the resistance R2 is 4.7K.
The protection circuit is mainly formed by voltage monitoring module, comparison module and FLASH composite modules, the voltage monitoring
Module is connected with one end of the comparison module, the output end of the comparison module and the write-protect of the FLASH composite modules
End connection.
The output end of the voltage monitoring chip U1 is connected by resistance R1 with an input of the comparator U2, institute
Another input of comparator is stated to be connected with the GPIO delivery outlets of the microprocessor.
The power end of the voltage monitoring chip U1 shares same power supply, the voltage monitoring with the FLASH chips U3
Chip U1 power end is connected to ground also by electric capacity C1.
The power end of the comparator U2 shares same power supply with FLASH, and the power end of the comparator U2 is also by electricity
Hold C2 to be connected to ground.
Described electric capacity C1, C2 are from the farad capacitor that capacitance is 100nF.
The output end of the comparator U2 and FLASH write-protect end WP connections.
The write-protect end of the FLASH chip U3 WP be connected to ground by resistance R2.
Described resistance R1, R2 resistance are respectively 0R, 4.7K.
The comparator U2 is and gate circuit.
Fig. 1 shows a kind of FLASH abnormity of power supply down Monitor Unit protection circuit that the utility model is provided, the protection electricity
Road is mainly combined by voltage monitoring chip, comparator and FLASH chip, and writing for FLASH is controlled by an output interface
Protection end WP.The power end of the voltage monitoring chip U1 connects FLASH power vd D, the electricity of the voltage monitoring chip U1
Source is connected to ground, output end connection 0R the resistance R1, the comparator U2 of the monitoring chip U1 also by 100nF electric capacity C1
An input and the GPIO mouths of microprocessor connect, another input of the comparator U2 is another with 0R resistance R1's
End connection, the power vd D connections of the power end and FLASH of the comparator U2, the power end of the comparator U2 also by
100nF electric capacity C2 is connected to ground, the output end of the comparator U2 and FLASH write-protect end WP connections, FLASH's writes
Protection end is connected to ground also by 4.7K resistance R2.Its operation principle is：1st, when VDD normal works, FLASH carries out write operation
When, WP and the voltage monitoring chip output are high level, thus the comparator is output as high level, FLASH's
Write-protect end is closed, it is allowed to which FLASH carries out write operation；2nd, when VDD normal works, when FLASH is without write operation, WP outputs are low
Level, voltage monitoring chip is output as high level, thus the comparator is output as low level and drawn together with resistance R2
Low FLASH write-protect end, FLASH is in write-protect state, does not allow write operation；3rd, when FLASH power vd D powered-off faults
When, the voltage monitoring chip detects voltage decline, and exports immediately before dropping to FLASH normal working voltages under voltage
Low level（Now microprocessor also has not enough time to make write-protect order by WP ports by software, may be also to FLASH
Carry out write operation）, and then make comparator output low level enforced opening FLASH write-protect end WP, stop to FLASH
Write operation, compared with software, so greatly reduce open FLASH write-protect reaction time, exist so as to avoid FLASH
Because powered-off fault is damaged when carrying out write operation.
Above-described embodiment is only to realize a kind of mode of the present utility model, can basis in design and implementation process
Suitably changed from different chips, the change of output level during than monitoring chip power down as described above.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Any modifications, equivalent substitutions and improvements made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (6)
1. a kind of protection circuit of FLASH abnormity of power supply down Monitor Unit, it is characterised in that：The protection circuit includes voltage monitoring
Module, comparison module and FLASH composite modules, the output end of the voltage monitoring module connect the input of the comparison module
End, the output end of the comparison module connects the input of the FLASH composite modules, and the voltage monitoring module includes voltage
The RESET pin for monitoring chip U1, resistance R1 and electric capacity C1, the voltage monitoring chip U1 connect one end of the resistance R1, institute
The VCC pin for stating voltage monitoring chip U1 connect power vd D and electric capacity C1 one end, the GND of the voltage monitoring chip U1 respectively
Pin is grounded, the other end ground connection of the electric capacity C1.
2. protection circuit according to claim 1, it is characterised in that the comparison module includes comparator U2 and electric capacity
C2, the comparator U2 negative input connect the other end of the resistance R1, and the VCC pin of the comparator U2 connect described respectively
Electric capacity C2 one end and power vd D, the comparator U2 GND pin ground connection, the other end ground connection of the electric capacity C2.
3. protection circuit according to claim 2, it is characterised in that the FLASH composite modules include FLASH chips
U3 and resistance R2, the FLASH chips U3 WP pin connect one end of the resistance R2 and the output of the comparator U2 respectively
End, VDD pin connection the power vd D, the resistance R2 of the FLASH chips U3 other end ground connection.
4. protection circuit according to claim 3, it is characterised in that the comparator U2 is used and gate circuit.
5. protection circuit according to claim 4, it is characterised in that the capacitance of the electric capacity C1 and electric capacity C2 is
100nF farad capacitor.
6. protection circuit according to claim 5, it is characterised in that the resistance of the resistance R1 is 0R, the resistance R2
Resistance be 4.7K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621460369.1U CN206401032U (en) | 2016-12-28 | 2016-12-28 | A kind of protection circuit of FLASH abnormity of power supply down Monitor Unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621460369.1U CN206401032U (en) | 2016-12-28 | 2016-12-28 | A kind of protection circuit of FLASH abnormity of power supply down Monitor Unit |
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| Publication Number | Publication Date |
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| CN206401032U true CN206401032U (en) | 2017-08-11 |
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ID=59516448
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621460369.1U Active CN206401032U (en) | 2016-12-28 | 2016-12-28 | A kind of protection circuit of FLASH abnormity of power supply down Monitor Unit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109658958A (en) * | 2019-01-04 | 2019-04-19 | 西安微电子技术研究所 | A kind of mram memory power-down data protection circuit, method and application based on voltage monitoring |
| CN110929283A (en) * | 2019-12-06 | 2020-03-27 | 中电长城(长沙)信息技术有限公司 | UEFI BIOS hierarchical protection system and corresponding implementation method |
| CN112053727A (en) * | 2020-08-20 | 2020-12-08 | 珠海格力电器股份有限公司 | EEPROM power-down protection control method, device, storage medium and storage equipment |
| WO2021081686A1 (en) * | 2019-10-28 | 2021-05-06 | 深圳市大疆创新科技有限公司 | Control method, device, chip, and storage medium |
-
2016
- 2016-12-28 CN CN201621460369.1U patent/CN206401032U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109658958A (en) * | 2019-01-04 | 2019-04-19 | 西安微电子技术研究所 | A kind of mram memory power-down data protection circuit, method and application based on voltage monitoring |
| WO2021081686A1 (en) * | 2019-10-28 | 2021-05-06 | 深圳市大疆创新科技有限公司 | Control method, device, chip, and storage medium |
| CN110929283A (en) * | 2019-12-06 | 2020-03-27 | 中电长城(长沙)信息技术有限公司 | UEFI BIOS hierarchical protection system and corresponding implementation method |
| CN110929283B (en) * | 2019-12-06 | 2023-09-19 | 中电长城(长沙)信息技术有限公司 | Hierarchical protection system of UEFI BIOS and corresponding implementation method |
| CN112053727A (en) * | 2020-08-20 | 2020-12-08 | 珠海格力电器股份有限公司 | EEPROM power-down protection control method, device, storage medium and storage equipment |
| CN112053727B (en) * | 2020-08-20 | 2023-03-31 | 珠海格力电器股份有限公司 | EEPROM power-down protection control method, device, storage medium and storage equipment |
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