CN206389274U - IGBT dynamic active clamping protective circuits - Google Patents
IGBT dynamic active clamping protective circuits Download PDFInfo
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- CN206389274U CN206389274U CN201621475385.8U CN201621475385U CN206389274U CN 206389274 U CN206389274 U CN 206389274U CN 201621475385 U CN201621475385 U CN 201621475385U CN 206389274 U CN206389274 U CN 206389274U
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Abstract
The utility model is related to a kind of IGBT dynamic actives clamping protective circuit, including IGBT device, it is characterized in that：Some transient voltage suppressor diode groups, diode D3, current-limiting resistance R1 and Absorption Capacitance C1 are sequentially connected between the colelctor electrode and grid of the IGBT device, the transient voltage suppressor diode group includes some transient voltage suppressor diode TVS, n gate-controlled switch is parallel with from n-th of transient voltage suppressor diode TVS two ends of the current collection extreme direction of IGBT device, n is positive integer；The control end of the gate-controlled switch with for controlling the switch driving circuit of the gate-controlled switch conducting state to be connected, the switch driving circuit is connected with signal processing control circuit, and the signal processing control circuit detects that the voltage detecting circuit of DC bus-bar voltage is connected with being used for.The utility model circuit structure is simple, it is easy to accomplish, it is safe and reliable, it can effectively protect IGBT to drive and itself.
Description
Technical field
The utility model is related to a kind of drive circuit, especially a kind of IGBT dynamic actives clamping protective circuit, belongs to
IGBT actuation techniques field.
Background technology
Insulated gate bipolar transistor IGBT is the multiple device of MOSFET and bipolar transistor.It both has power MOSFET
The advantage that input impedance is high, operating rate is fast, easily drive, has that bipolar Darlington power transistor GTO saturation voltages are low, electric current holds again
Amount is big, the advantage of high pressure, can normal work in tens KHz frequency ranges, therefore set in the big or middle power of upper frequency
It is standby（Such as frequency converter, ups power, photovoltaic DC-to-AC converter, high-frequency induction welder）Leading position is occupied in.
One of key technology of IGBT applications is Overvoltage suppressing.Overvoltage suppressing is not only related to the work of IGBT in itself
Characteristic and operation safety, also affect the performance and safety of whole system.Due to the presence of stray inductance in circuit, IGBT exists
Normal condition can produce certain voltage spike when turning off, but numerical value will not be too high, but occur in current transformer overload or bridge arm
In the case of short circuit, colelctor electrode can produce very high peak voltage during shut-off IGBT, and too high peak voltage is easy to make
IGBT is damaged.
The target of active clamp circuit is to vise IGBT collector potential, it is reached too high level, if
The due to voltage spikes produced during shut-off is too high, or too steep, can all IGBT is on the hazard.So active clamp circuit is generally in event
It can just act, not worked when normal under barrier state.
At present, IGBT active clamp circuits have Fig. 1 and Fig. 2 two ways.Wherein, Fig. 1 circuits belong to static active clamp,
In actual application, the electrical voltage point of active clamp is often higher by because busbar voltage is higher and fluctuation is larger, if not locating
Reason, active clamp circuit can enter the state of continuous action, be easily damaged drive circuit.For this situation, propose shown in Fig. 2
Improvement project, so can be with the similar threshold for dynamically adjusting active clamp by being parallel with electric capacity and discharge resistance in TVS pipe
Value, but be parallel with after electric capacity and discharge resistance and increase loss, the actuation time of influence active clamp.
Fig. 1 and Fig. 2 is directed to the occasion that busbar voltage is changed greatly（Such as solar inverter, APF, traction convertor）,
The need of the flexible modulation of driving force and route protection ability under different application scene to IGBT drive circuit can not be met
Ask.
The content of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art to be protected there is provided a kind of IGBT dynamic actives clamper
Protection circuit, its circuit structure is simple, it is easy to accomplish, it is safe and reliable, it can effectively protect IGBT to drive and itself.
The technical scheme provided according to the utility model, the IGBT dynamic actives clamping protective circuit, including IGBT devices
Part, it is characterized in that：Some transient voltage suppressor diode groups are sequentially connected between the colelctor electrode and grid of the IGBT device
Group, diode D3, current-limiting resistance R1 and Absorption Capacitance C1, the transient voltage suppressor diode group include some transient voltages
Suppress diode TVS, n are parallel with from n-th of transient voltage suppressor diode TVS two ends of the current collection extreme direction of IGBT device
Gate-controlled switch, n is positive integer；The control end of the gate-controlled switch with the switch for controlling the gate-controlled switch conducting state
Drive circuit is connected, and the switch driving circuit is connected with signal processing control circuit, and the signal processing control circuit is with using
In the voltage detecting circuit connection of detection DC bus-bar voltage.
Further, the voltage detecting circuit includes high pressure differential operational amplifier and its modulate circuit, voltage detecting
Circuit is arranged on the colelctor electrode of IGBT device or dc bus.
Further, the gate-controlled switch includes metal-oxide-semiconductor, and the source terminal of metal-oxide-semiconductor, drain electrode end suppress with transient voltage respectively
Diodes in parallel is connected, and the gate terminal of metal-oxide-semiconductor and the output end of switch driving circuit are connected.
Further, the Absorption Capacitance C1 is parallel with current-limiting resistance R1 two ends.
Advantage of the present utility model：Real-time sampling, signal transacting are carried out to DC bus-bar voltage by voltage detecting circuit
Control circuit determines active clamp voltage according to the size of DC bus-bar voltage, and electric to switch drive according to active clamp voltage
Road transmitting switch enables signal, and switch driving circuit enables signal according to switch and determines to access the number of transient voltage suppressor diode
Amount and the gate-controlled switch accordingly turned on, so that the action threshold of active clamp is arranged to dynamically, to be prevented effectively from
The continuous action of source clamp circuit, and then avoid IGBT from being operated in linear zone, prevent IGBT device from damaging.
Brief description of the drawings
Fig. 1 is the structural representation that prior art typical case IGBT drives active clamp circuit.
Fig. 2 is that prior art modified IGBT drives active clamp circuit schematic diagram.
Fig. 3 is structured flowchart of the present utility model.
Embodiment
With reference to specific accompanying drawing, the utility model is described in further detail.
As shown in figure 3, IGBT dynamic actives clamping protective circuit described in the utility model includes IGBT device, in IGBT devices
Be sequentially connected between the colelctor electrode and grid of part some transient voltage suppressor diode groups, diode D3, current-limiting resistance R1 and
Absorption Capacitance C1, the transient voltage suppressor diode group includes some transient voltage suppressor diode TVS, from IGBT device
N-th of transient voltage suppressor diode TVS two ends of current collection extreme direction be parallel with n gate-controlled switch, n is positive integer；It is described
Gate-controlled switch includes metal-oxide-semiconductor, and the source terminal of metal-oxide-semiconductor, drain electrode end are connected in parallel with transient voltage suppressor diode respectively, metal-oxide-semiconductor
Gate terminal be connected with the output end of switch driving circuit 1；The control end of the gate-controlled switch with it is described controllable for controlling
The switch driving circuit 1 of switch-turn-ON states is connected, and the switch driving circuit 1 is connected with signal processing control circuit 2, described
Signal processing control circuit 2 detects that the voltage detecting circuit 3 of DC bus-bar voltage is connected with being used for.Therefore, when switch drive electricity
During the control of road 1 gate-controlled switch conducting, then the transient voltage suppressor diode being connected with the gate-controlled switch can be short-circuited, that is, be opened
When closing conducting of the drive circuit 1 by controlling different gate-controlled switches, transient voltage suppressor diode quantity can be adjusted, you can to adjust
Save active clamp voltage.
The voltage detecting circuit 3 transmits the DC bus-bar voltage detected to signal processing control circuit 2, signal
Control and treatment circuit 2 determines active clamp voltage according to the DC bus-bar voltage received, and according to the active clamp electricity of determination
Press to switch driving circuit 1 and export corresponding switch enable signal；The switch driving circuit 1 receives switch and enables signal, and
Drive signal is opened to the output of corresponding gate-controlled switch according to switch enable signal, to open corresponding by opening drive signal
Gate-controlled switch so that the transient voltage suppressor diode group of access matches with active clamp voltage.
The voltage detecting circuit 3 includes high pressure differential operational amplifier and its modulate circuit, and high pressure differential signal is turned
Change Low Voltage Differential Signal into, voltage detecting circuit 3 is arranged on the bus of IGBT device connection.In the specific implementation, voltage is examined
Slowdown monitoring circuit 3 can also be using other ways of realization, as long as DC bus-bar voltage can be detected.
In the utility model embodiment, signal processing control circuit 2 can input simulation numeral using AD7674 fully differentials
Converter chip and 51 chip microcontrollers, Low Voltage Differential Signal pass through AD7674 analog differential input, and analog signal is turned
Corresponding digital control signal is changed to, then is handled to 51 single-chip microcomputers, corresponding switching signal is drawn, and then carry out driving switch driving
Circuit 1, realizes the conducting and shut-off of gate-controlled switch, internal detailed digital-to-analogue conversion control is known to those skilled in the art, herein
Repeat no more.It can also be realized using corresponding logic circuit, DC bus-bar voltage is handled and exported as long as can realize
Switch enables signal.
Usually, when metal-oxide-semiconductor all in transient voltage suppressor diode group is in off state, then access
The quantity of transient voltage suppressor diode between IGBT device collection grid is the summation of all transient voltage suppressor diodes.And
When there is multiple metal-oxide-semiconductors to turn on, then corresponding transient voltage suppressor diode group in parallel is by short circuit, so as to needed for obtaining
Active clamp magnitude of voltage.When it is implemented, the transient voltage suppressor diode in transient voltage suppressor diode group is
Positive temperature characterisitic, the less TVS pipe of temperature coefficient, the specific voltage swing of TVS pipe can carry out selection determination as needed,
TVS pipe can be serial using the SMBJ of ST companies.In addition, metal-oxide-semiconductor should choose the type that internal resistance is big, saturation voltage drop is small, it can adopt
Managed with IR low pressure CoolMOS.
The utility model detected in real time by voltage detecting circuit to DC bus-bar voltage, signal processing control circuit
Active clamp voltage is determined according to DC bus-bar voltage, and enabled according to DC bus-bar voltage to switch driving circuit transmitting switch
Signal, switch driving circuit enables the quantity of signal determination access transient voltage suppressor diode according to switch and need to accordingly led
Logical gate-controlled switch, so as to cause the active clamp voltage in transient voltage suppressor diode group and DC bus-bar voltage phase
Matching, can be prevented effectively from the continuous action of active clamp circuit, ensure IGBT device and the fortune of drive circuit to greatest extent
Row safety, can also simplify operation, realize flexible Application.
In addition, clamp diode D1 is connected between the grid and emitter stage of the IGBT device, in the grid of IGBT device
Pole connects push-pull circuit, the output end connection of push-pull circuit and switch driving circuit.
The utility model discloses a kind of IGBT dynamic actives clamping protective circuit, belong to the technical field of IGBT drivings.
The technical scheme provided according to the utility model, the IGBT dynamic actives clamping protective circuit, including IGBT device, in addition to
It is connected to some transient voltage suppressor diode groups between the colelctor electrode of the IGBT and grid, diode, current limliting in turn
Resistance, Absorption Capacitance, clamp diode, the transient voltage suppressor diode group is according to 1,2 n incremental sides
Formula is parallel with gate-controlled switch, the control end of gate-controlled switch with the switch drive electricity for controlling the gate-controlled switch conducting state
Road is connected, and the switch driving circuit is connected with signal processing control circuit, and signal processing control circuit detects direct current with being used for
The voltage detecting circuit connection of busbar voltage；The utility model circuit structure is simple, realizes the guarantor of IGBT dynamic active clampers
Shield, can effectively extend IGBT service life, improve the operating efficiency of IGBT circuits, safe and reliable.Can be according to different application
Under the conditions of dynamic regulation active clamp voltage, can apply during IGBT drive circuit under various different operating modes designs.
Claims (4)
1. a kind of IGBT dynamic actives clamping protective circuit, including IGBT device, it is characterized in that：In the current collection of the IGBT device
Some transient voltage suppressor diode groups, diode D3, current-limiting resistance R1 and Absorption Capacitance are sequentially connected between pole and grid
C1, the transient voltage suppressor diode group includes some transient voltage suppressor diode TVS, from the colelctor electrode of IGBT device
N-th of transient voltage suppressor diode TVS two ends in direction are parallel with n gate-controlled switch, and n is positive integer；The gate-controlled switch
Control end with for controlling the switch driving circuit of the gate-controlled switch conducting state to be connected, the switch driving circuit with
Signal processing control circuit is connected, the signal processing control circuit and the voltage detecting circuit for detecting DC bus-bar voltage
Connection.
2. IGBT dynamic actives clamping protective circuit as claimed in claim 1, it is characterized in that：The voltage detecting circuit includes
High pressure differential operational amplifier and its modulate circuit, voltage detecting circuit are arranged at the colelctor electrode or dc bus of IGBT device
On.
3. IGBT dynamic actives clamping protective circuit as claimed in claim 1, it is characterized in that：The gate-controlled switch includes MOS
Pipe, the source terminal of metal-oxide-semiconductor, drain electrode end are connected in parallel with transient voltage suppressor diode respectively, and gate terminal and the switch of metal-oxide-semiconductor drive
The output end connection of dynamic circuit.
4. IGBT dynamic actives clamping protective circuit as claimed in claim 1, it is characterized in that：The Absorption Capacitance C1 is parallel with
Current-limiting resistance R1 two ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621475385.8U CN206389274U (en) | 2016-12-30 | 2016-12-30 | IGBT dynamic active clamping protective circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621475385.8U CN206389274U (en) | 2016-12-30 | 2016-12-30 | IGBT dynamic active clamping protective circuits |
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| Publication Number | Publication Date |
|---|---|
| CN206389274U true CN206389274U (en) | 2017-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621475385.8U Active CN206389274U (en) | 2016-12-30 | 2016-12-30 | IGBT dynamic active clamping protective circuits |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107046361A (en) * | 2016-12-30 | 2017-08-15 | 江苏中科君芯科技有限公司 | IGBT dynamic active clamping protective circuits |
| CN111337808A (en) * | 2019-05-13 | 2020-06-26 | 上海交通大学 | Online measuring circuit and system for conduction voltage drop of power semiconductor device |
| CN111722072A (en) * | 2020-05-14 | 2020-09-29 | 上海交通大学 | High-voltage-resistance power semiconductor device conduction voltage drop on-line measurement circuit and system |
| CN112564466A (en) * | 2020-12-05 | 2021-03-26 | 青岛鼎信通讯股份有限公司 | IGBT turn-off spike suppression circuit of low-voltage static var generator |
| CN118100380A (en) * | 2024-04-29 | 2024-05-28 | 华羿微电子股份有限公司 | BMS active clamp protection circuit and chip |
-
2016
- 2016-12-30 CN CN201621475385.8U patent/CN206389274U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107046361A (en) * | 2016-12-30 | 2017-08-15 | 江苏中科君芯科技有限公司 | IGBT dynamic active clamping protective circuits |
| CN111337808A (en) * | 2019-05-13 | 2020-06-26 | 上海交通大学 | Online measuring circuit and system for conduction voltage drop of power semiconductor device |
| CN111337808B (en) * | 2019-05-13 | 2023-08-25 | 上海交通大学 | On-line measuring circuit and system for conduction voltage drop of power semiconductor device |
| CN111722072A (en) * | 2020-05-14 | 2020-09-29 | 上海交通大学 | High-voltage-resistance power semiconductor device conduction voltage drop on-line measurement circuit and system |
| CN111722072B (en) * | 2020-05-14 | 2022-02-25 | 上海交通大学 | High-voltage-resistance power semiconductor device conduction voltage drop on-line measurement circuit and system |
| CN112564466A (en) * | 2020-12-05 | 2021-03-26 | 青岛鼎信通讯股份有限公司 | IGBT turn-off spike suppression circuit of low-voltage static var generator |
| CN118100380A (en) * | 2024-04-29 | 2024-05-28 | 华羿微电子股份有限公司 | BMS active clamp protection circuit and chip |
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