CN206364020U - A kind of groove gate type Schottky diode - Google Patents
A kind of groove gate type Schottky diode Download PDFInfo
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- CN206364020U CN206364020U CN201621436824.4U CN201621436824U CN206364020U CN 206364020 U CN206364020 U CN 206364020U CN 201621436824 U CN201621436824 U CN 201621436824U CN 206364020 U CN206364020 U CN 206364020U
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- schottky diode
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- contact pilotage
- epitaxial layers
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Abstract
The utility model discloses a kind of groove gate type Schottky diode, including negative electrode contact pilotage, anode contact pilotage and temperature sensor, the negative electrode contact pilotage is arranged on the lower section of cathodic metal, N+ cathode layers are provided with above the cathodic metal, outside the coolant jacket discharge outlet is provided with the right positions of N+ cathode layers, it is provided with N epitaxial layers above the N-type substrate, the N epitaxial layers are internally provided with p-type extension, the p-type extension is internally provided with groove grid.The outside of type Schottky diode is deleted there is provided protective case in groove; cooling water is full of inside protective case; diode can be cooled; prevent diode temperature rise from causing reverse leakage flow valuve to raise, it is to avoid thermal runaway phenomenon, temperature sensor is provided with inside protective case; the water temperature inside protective case can be detected at any time; after cooling water temperature rise, the cooling water inside protective case can be changed by water inlet and delivery port, it is very convenient to use.
Description
Technical field
The utility model belongs to technical field of semiconductor device, and in particular to a kind of groove gate type Schottky diode.
Background technology
Schottky diode is that noble metal (gold, silver, aluminium, platinum etc.) A is positive pole, using N-type semiconductor B as negative pole, utilizes two
The metal-semiconductor device that the potential barrier formed on person's contact surface has rectification characteristic and is made.Because being existed in N-type semiconductor
Only has minimal amount of free electron in substantial amounts of electronics, noble metal, so electronics is just in A low to concentration from the high B of concentration
Diffusion.Obviously, there is no hole in metal A, diffusion motion of the hole from A to B is also just not present.As electronics is constantly from B diffusions
To A, B surface electron concentration is gradually reduced, and surface electroneutrality is destroyed, and then just forms potential barrier, and its direction of an electric field is B → A.But
Under the electric field action, the electronics in A can also produce the drift motion from A → B, so as to slacken the shape due to diffusion motion
Into electric field.After the space-charge region of one fixed width is set up, electronics drift motion caused by electric field is different with concentration to be caused
Electrons spread motion reach relative balance, just form Schottky barrier.
The groove of existing in the market deletes type diode and there are some defects in use, such as does not set on diode
Heat sink is put, thermal runaway phenomenon is easily produced, causes temperature to raise and cause reverse leakage flow valuve drastically to raise, is not provided with
Temperature sensor, it is impossible to detect temperature.
The content of the invention
The purpose of this utility model is to provide a kind of groove gate type Schottky diode, to solve to carry in above-mentioned background technology
Heat sink is not provided with the diode gone out, thermal runaway phenomenon is easily produced, causes temperature to raise and cause reverse leakage current
Value is drastically raised, and is not provided with temperature sensor, it is impossible to the problem of detecting temperature.
To achieve the above object, the utility model provides following technical scheme：A kind of groove gate type Schottky diode, including
Negative electrode contact pilotage, anode contact pilotage and temperature sensor, the negative electrode contact pilotage are arranged on the lower section of cathodic metal, the cathodic metal
Top, which is provided with above N+ cathode layers, and the N+ cathode layers, is provided with N-type substrate, and the outer wrap of N+ cathode layers has cold
But cover, be provided with discharge outlet outside the coolant jacket at the right positions of N+ cathode layers, the top of the N-type substrate is set
There are a N- epitaxial layers, the N- epitaxial layers are internally provided with p-type extension, the p-type extension is internally provided with groove grid, the N-
It is provided with above epitaxial layer on the right side of anode metal, the anode metal and is provided with silicon dioxide substrates, the silica
It is provided with outside protection ring, the coolant jacket and is provided with the leftward position of silicon dioxide substrates into water above substrate
Mouthful, the anode contact pilotage is arranged on the top middle position of anode metal, and the temperature sensor is arranged on the upper of coolant jacket
Square inwall, the temperature sensor is electrically connected with external control panel.
It is preferred that, the protection ring is provided with two altogether, and two protection rings are separately positioned on left and right above anode metal
Both sides.
It is preferred that, it is enclosed with coolant jacket outside the N- epitaxial layers, N-type substrate, N+ cathode layers and silicon dioxide substrates.
It is preferred that, the p-type extension is provided with five altogether, and five p-type extensions are uniformly arranged on inside N- epitaxial layers.
It is preferred that, the groove grid are at least provided with ten, and ten groove grid are uniformly arranged on inside five p-type extensions.
Compared with prior art, the beneficial effects of the utility model are：The utility model is scientific and reasonable for structure, uses safety
It is convenient, the outside of type Schottky diode is deleted in groove there is provided being full of cooling water inside protective case, protective case, can be to diode
Cooled, prevent diode temperature rise from causing reverse leakage flow valuve to raise, it is to avoid thermal runaway phenomenon, inside protective case
There is provided temperature sensor, the water temperature inside protective case can be detected at any time, can be by entering after cooling water temperature rise
The mouth of a river and delivery port are changed to the cooling water inside protective case, very convenient to use.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is side view of the present utility model；
In figure：1-P types extension, 2-N- epitaxial layers, 3-N types substrate, 4- discharge outlet, 5- N+ cathode layers, 6- negative electrodes contact pilotage,
7- cathodic metals, 8- coolant jackets, 9- water inlets, 10- grooves grid, 11- anode metals, 12- anodes contact pilotage, 13- protection rings, 14- bis-
Aoxidize silicon chip, 15- temperature sensors.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belongs to the scope of the utility model protection.
Fig. 1 and Fig. 2 are referred to, the utility model provides a kind of technical scheme：A kind of groove gate type Schottky diode, including
Negative electrode contact pilotage 6, anode contact pilotage 12 and temperature sensor 15, negative electrode contact pilotage 6 are arranged on the lower section of cathodic metal 7, cathodic metal 7
Top is provided with N+ cathode layers 5, and the top of N+ cathode layers 5 is provided with N-type substrate 3, and the outer wrap of N+ cathode layers 5 has cold
But 8 are covered, the outside of coolant jacket 8 is provided with discharge outlet 4 at the right positions of N+ cathode layers 5, and the top of N-type substrate 3 is provided with
N- epitaxial layers 2, N- epitaxial layers 2 are internally provided with p-type extension 1, and p-type extension 1 is internally provided with groove grid 10, N- epitaxial layers 2
Top be provided with anode metal 11, the right side of anode metal 11 is provided with silicon dioxide substrates 14, silicon dioxide substrates 14
Top is provided with protection ring 13, and the outside of coolant jacket 8 is provided with water inlet 9 at the leftward position of silicon dioxide substrates 14, sun
Pole contact pilotage 12 is arranged on the top middle position of anode metal 11, and temperature sensor 15 is arranged on the upper inner wall of coolant jacket 8,
Temperature sensor 15 is electrically connected with external control panel.
In order that the better of leakage current is reduced, in the present embodiment, it is preferred that protection ring 13 is provided with two altogether,
And two protection rings 13 are separately positioned on the top left and right sides of anode metal 11.
In order that the cooling effect of diode is more preferably, and in the present embodiment, N- epitaxial layers 2, N-type substrate 3, N+ negative electrodes preferably
Coolant jacket 8 is enclosed with outside layer 5 and silicon dioxide substrates 14.
In order that diode can be with the work of normal table, in the present embodiment, it is preferred that p-type extension 1 is provided with five altogether
It is individual, and five p-type extensions 1 are uniformly arranged on inside N- epitaxial layers 2.
In order that puncturing for diode is better, and the effect of electric leakage is reduced, in the present embodiment, it is preferred that groove grid 10
At least provided with ten, and ten groove grid 10 are uniformly arranged on inside five p-type extensions 1.
Temperature sensor 15 of the present utility model refers to the sensor that can be experienced temperature and be converted into usable output signal, temperature
Degree sensor 15 is the core of temperature measuring instrument, various in style, can be divided into contact and contactless by metering system
Two major classes, are divided into thermal resistance and the class of thermocouple two according to sensor material and electron component characteristic, and thermocouple is connected by one end
Two different metal lines (metal A and metal B) constitute, when thermocouple one end is heated, just have electrical potential difference in thermocouple circuit,
Temperature can be calculated with the electrical potential difference of measurement, and thermistor is to use semi-conducting material, is mostly negative temperature coefficient, i.e., resistance with
Temperature increases and reduced, and temperature change can cause big resistance to change, therefore it is most sensitive.
Operation principle of the present utility model and use flow：N- epitaxial layers 2, anode metal are provided with N-type substrate 3
The 11 obstruction layers being made using materials such as aluminium and molybdenums, silicon dioxide substrates 14 are used for eliminating the electric field of fringe region, improve pipe
Pressure voltage, N-type substrate 3 has the on state resistance of very little, N+ cathode layers 5 is provided with below N-type substrate 3, it is possible to reduce cloudy
The contact resistance of pole, is provided with groove grid 10, and be provided with p-type extension 1 in the outside of groove grid 10 so that p-type on N- epitaxial layers 2
Extension 1 and the formation PN diodes of N- epitaxial layers 2, form high pressure in the bottom of groove grid 10, strengthen the bottom of groove grid 10 due to electric field
The high pressure of formation is provided with coolant jacket 8 to the breakdown effects of diode outside diode, injects cooling water, can avoid by
Cause the linear increase of reverse leakage flow valuve in temperature rise, produce thermal runaway phenomenon, can be detected by temperature sensor 15
To the water temperature of cooling water, cooling water is changed by discharge outlet 4 and water inlet 9 after water temperature rise, protection ring 13 can subtract
Few leakage current.External electric device is connected by negative electrode contact pilotage 6 and anode contact pilotage 12, you can realize unilateal conduction.
While there has been shown and described that embodiment of the present utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out in the case where not departing from principle of the present utility model and spirit a variety of changes, repaiies
Change, replace and modification, scope of the present utility model is defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of groove gate type Schottky diode, including negative electrode contact pilotage（6）, anode contact pilotage（12）And temperature sensor（15）, its
It is characterised by：The negative electrode contact pilotage（6）It is arranged on cathodic metal（7）Lower section, the cathodic metal（7）Top be provided with N+
Cathode layer（5）, and the N+ cathode layers（5）Top be provided with N-type substrate（3）, and N+ cathode layers（5）Outer wrap have cold
But cover（8）, the coolant jacket（8）Outside close N+ cathode layers（5）Right positions at be provided with discharge outlet（4）, the N-type base
Piece（3）Top be provided with N- epitaxial layers（2）, the N- epitaxial layers（2）Be internally provided with p-type extension（1）, outside the p-type
Prolong（1）Be internally provided with groove grid（10）, the N- epitaxial layers（2）Top be provided with anode metal（11）, the anode gold
Category（11）Right side be provided with silicon dioxide substrates（14）, the silicon dioxide substrates（14）Top be provided with protection ring
（13）, the coolant jacket（8）Outside close silicon dioxide substrates（14）Leftward position at be provided with water inlet（9）, the sun
Pole contact pilotage（12）It is arranged on anode metal（11）Top middle position, the temperature sensor（15）It is arranged on coolant jacket
（8）Upper inner wall, the temperature sensor（15）It is electrically connected with external control panel.
2. a kind of groove gate type Schottky diode according to claim 1, it is characterised in that：The protection ring（13）Set altogether
It is equipped with two, and two protection rings（13）It is separately positioned on anode metal（11）The top left and right sides.
3. a kind of groove gate type Schottky diode according to claim 1, it is characterised in that：The N- epitaxial layers（2）、N
Type substrate（3）, N+ cathode layers（5）And silicon dioxide substrates（14）Outside is enclosed with coolant jacket（8）.
4. a kind of groove gate type Schottky diode according to claim 1, it is characterised in that：The p-type extension（1）Set altogether
It is equipped with five, and five p-type extensions（1）It is uniformly arranged on N- epitaxial layers（2）It is internal.
5. a kind of groove gate type Schottky diode according to claim 1, it is characterised in that：The groove grid（10）At least set
It is equipped with ten, and ten groove grid（10）It is uniformly arranged on five p-type extensions（1）It is internal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621436824.4U CN206364020U (en) | 2016-12-26 | 2016-12-26 | A kind of groove gate type Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621436824.4U CN206364020U (en) | 2016-12-26 | 2016-12-26 | A kind of groove gate type Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206364020U true CN206364020U (en) | 2017-07-28 |
Family
ID=59375901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621436824.4U Active CN206364020U (en) | 2016-12-26 | 2016-12-26 | A kind of groove gate type Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206364020U (en) |
-
2016
- 2016-12-26 CN CN201621436824.4U patent/CN206364020U/en active Active
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