CN206312900U - High mobility gallium nitride semiconductor device - Google Patents
High mobility gallium nitride semiconductor device Download PDFInfo
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- CN206312900U CN206312900U CN201621363837.3U CN201621363837U CN206312900U CN 206312900 U CN206312900 U CN 206312900U CN 201621363837 U CN201621363837 U CN 201621363837U CN 206312900 U CN206312900 U CN 206312900U
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Abstract
The utility model is related to a kind of high mobility gallium nitride semiconductor device, and the high mobility gallium nitride semiconductor device includes substrate；It is arranged at the aln seed crystal layer on the substrate；It is arranged at the cushion on the aln seed crystal layer；It is arranged at the unintentionally doped gallium nitride layer on the cushion；The channel layer in the unintentionally doped gallium nitride layer is arranged at, the channel layer is gallium indium nitride layer, aluminum gallium nitride or composite bed；It is arranged at the second aluminum gallium nitride on the channel layer；And it is arranged at the gallium nitride cap layers on second aluminum gallium nitride.Above-mentioned gallium nitride semiconductor device can improve the electron mobility characteristics of gallium nitride power device, can improve the effect of the 2DEG using un GaN/InGaN/AlGaN layer.
Description
Technical field
The utility model is related to technical field of semiconductors, more particularly to a kind of high mobility gallium nitride semiconductor device and
Its preparation method.
Background technology
Based on the power device of silicon, in past 20 years, Si power device was carried every 10 years in existing electric semiconductor market
5-6 times high of power density, but already close to theoretical limit, it is difficult to expect the improvement of ensuing aspect of performance.
Compared to silicon or GaAs, GaN semiconductors have energy gap (Eg=3.4eV) wide, in high temperature the advantages of stabilization.In addition,
With respect to silicon electric semiconductor, GaN electric semiconductors have low temperature resistant characteristic, and this has what is produced with electric semiconductor to turn
The advantages of changing loss minimized and minimized system cost electric power.GaN semiconductor devices is turned at a high speed by miniaturization, high voltage
Bring and realize low loss, efficient electrical device of new generation, mainly in industry net, power network, information and mechanics of communication (ICT)
It is continuously increased Deng domain requirement.
But GaN electric semiconductors are more difficult in high-quality GaN supplies, to be grown up using sapphire or silicon, this
Can cause with the poor properties of substrate away from causing the quality decline of GaN film itself, it is more difficult to the problems such as embodying high-breakdown-voltage.
To solve this problem, not only to improve AlN Seed layer/AlGaN buffer layer on Si substrates
Effect, and to improve the material of two-dimensional electron gas 2DEG (using the un-GaN/AlGaN layer for being formed thereon) formation technology
Improve.
Using when embodying height in the electrical device of GaN and puncturing electric power and high-quality GaN layer, to forming AlN on Si substrates
It is of crucial importance Deng cushion (buffer layer) quality improving re-formed after inculating crystal layer.That is, using un-GaN/AlGaN
The quality of the 2DEG constructions of (being formed on AlN seed layer/AlGaN buffer layer on Si substrate) will be entered
Row improves.
So far, the construction for forming un-GaN/AlGaN layer is used, it is necessary to improve un-GaN/AlGaN interfaces
(interface) quality, now, the low quality of un-GaN/AlGaN, the characteristic of the transistor of power device also can be low.
Utility model content
Based on this, the purpose of this utility model is to provide a kind of high mobility gallium nitride semiconductor device.
Specific technical scheme is as follows：
A kind of high mobility gallium nitride semiconductor device, including：
Substrate；
It is arranged at the aln seed crystal layer on the substrate；
It is arranged at the cushion on the aln seed crystal layer；
It is arranged at the unintentionally doped gallium nitride layer on the cushion；
The channel layer in the unintentionally doped gallium nitride layer is arranged at, the channel layer is gallium indium nitride layer, aluminium nitride
Gallium layer or composite bed；
It is arranged at the second aluminum gallium nitride on the channel layer；
And it is arranged at the gallium nitride cap layers on second aluminum gallium nitride.
Wherein in some embodiments, the composite bed is the alternately laminated gallium indium nitride layer and aluminum gallium nitride of multilayer.
Wherein in some embodiments, the number of plies of the composite bed is 2-20 layers, and thickness is 0.1 μm -0.5 μm.
Wherein in some embodiments, the material of the cushion is gallium nitride, aluminium nitride or aluminum gallium nitride.
Wherein in some embodiments, the unintentionally doped gallium nitride layer includes the strain controlling layer and multilayer of multilayer
Masking layer, the number of plies >=0 of the strain controlling layer；The number of plies >=0 of the masking layer.
Wherein in some embodiments, the gallium nitride cap layers are p-type gallium nitride layer.
Wherein in some embodiments, the material of the substrate is silicon.
Above-mentioned gallium nitride semiconductor device can improve the electron mobility characteristics of gallium nitride power device, can improve and use
The effect of the 2DEG of un-GaN (unintentionally doped gallium nitride)/InGaN/AlGaN composite beds.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment migration gallium nitride semiconductor device high；
Fig. 2 is the structural representation of channel layer in Fig. 1.
Specific embodiment
For the ease of understanding the utility model, the utility model is more fully retouched below with reference to relevant drawings
State.Preferred embodiment of the present utility model is given in accompanying drawing.But, the utility model can come real in many different forms
It is existing, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is made to public affairs of the present utility model
The understanding for opening content is more thorough comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with technology of the present utility model is belonged to
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein "and/or" includes
The arbitrary and all of combination of one or more related Listed Items.
With reference to Fig. 1, a kind of high mobility gallium nitride semiconductor device of the present embodiment, including：
Substrate, the material of the substrate of the present embodiment is silicon；
It is arranged at the aln seed crystal layer on the substrate；
It is arranged at the cushion on the aln seed crystal layer；The material that may be appreciated cushion can be selected from nitridation
Gallium, aluminium nitride or aluminum gallium nitride；
It is arranged at the unintentionally doped gallium nitride layer on the cushion；
It should be understood that thickness and crystallinity in order to improve unintentionally doped gallium nitride layer, the nitrogen that unintentionally adulterates
Change the masking layer of strain controlling layer and multilayer of the gallium layer also comprising multilayer, the number of plies >=0 of the strain controlling layer；The masking layer
The number of plies >=0；
The channel layer in the unintentionally doped gallium nitride layer is arranged at, the channel layer is gallium indium nitride layer, aluminium nitride
Gallium layer or composite bed；
As shown in Fig. 2 the composite bed can be multilayer alternately laminated gallium indium nitride layer and aluminum gallium nitride, it is described multiple
The number of plies for closing layer is 6, and thickness is 0.4 μm；
It is arranged at the second aluminum gallium nitride on the channel layer；
And the gallium nitride cap layers on second aluminum gallium nitride are arranged at, the gallium nitride cap layers are p-type gallium nitride
Layer.
The preparation method of above-mentioned high mobility gallium nitride semiconductor device, comprises the following steps：
Substrate is provided；
Aln seed crystal layer is formed on the substrate；
Cushion is formed on the crystal seed layer；
Channel layer is formed on the cushion；
Unintentionally doped gallium nitride layer is formed on the cushion；
The channel layer formed in the unintentionally doped gallium nitride layer, the channel layer is gallium indium nitride layer, aluminium nitride
Gallium layer or composite bed；
The second aluminum gallium nitride is formed on the channel layer；
And gallium nitride cap layers are formed on second aluminum gallium nitride.
Above-mentioned gallium nitride semiconductor device can improve the electron mobility characteristics of gallium nitride power device, can improve and use
The effect of the 2DEG of un-GaN (unintentionally doped gallium nitride)/InGaN/AlGaN layer.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and its description is more specific and detailed,
But therefore can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (7)
1. a kind of high mobility gallium nitride semiconductor device, it is characterised in that including：
Substrate；
It is arranged at the aln seed crystal layer on the substrate；
It is arranged at the cushion on the aln seed crystal layer；
It is arranged at the unintentionally doped gallium nitride layer on the cushion；
The channel layer in the unintentionally doped gallium nitride layer is arranged at, the channel layer is gallium indium nitride layer, aluminum gallium nitride
Or composite bed；
It is arranged at the second aluminum gallium nitride on the channel layer；
And it is arranged at the gallium nitride cap layers on second aluminum gallium nitride.
2. high mobility gallium nitride semiconductor device according to claim 1, it is characterised in that the composite bed is multilayer
Alternately laminated gallium indium nitride layer and aluminum gallium nitride.
3. high mobility gallium nitride semiconductor device according to claim 2, it is characterised in that the number of plies of the composite bed
It it is 2-20 layers, thickness is 0.1 μm -0.5 μm.
4. the high mobility gallium nitride semiconductor device according to claim any one of 1-3, it is characterised in that the buffering
The material of layer is gallium nitride, aluminium nitride or aluminum gallium nitride.
5. the high mobility gallium nitride semiconductor device according to claim any one of 1-3, it is characterised in that described non-have
The masking layer of strain controlling layer of the meaning doped gallium nitride layer comprising multilayer and multilayer, the number of plies >=0 of the strain controlling layer；It is described
The number of plies >=0 of masking layer.
6. the high mobility gallium nitride semiconductor device according to claim any one of 1-3, it is characterised in that the nitridation
Gallium cap layers are p-type gallium nitride layer.
7. the high mobility gallium nitride semiconductor device according to claim any one of 1-3, it is characterised in that the substrate
Material be silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621363837.3U CN206312900U (en) | 2016-12-12 | 2016-12-12 | High mobility gallium nitride semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621363837.3U CN206312900U (en) | 2016-12-12 | 2016-12-12 | High mobility gallium nitride semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505102A (en) * | 2016-12-12 | 2017-03-15 | 英诺赛科（珠海）科技有限公司 | High mobility gallium nitride semiconductor device and preparation method thereof |
| CN107331699A (en) * | 2017-08-16 | 2017-11-07 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices and its preparation method and application |
| CN108054097A (en) * | 2017-12-13 | 2018-05-18 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices and preparation method thereof |
-
2016
- 2016-12-12 CN CN201621363837.3U patent/CN206312900U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505102A (en) * | 2016-12-12 | 2017-03-15 | 英诺赛科（珠海）科技有限公司 | High mobility gallium nitride semiconductor device and preparation method thereof |
| CN106505102B (en) * | 2016-12-12 | 2024-05-03 | 英诺赛科（珠海）科技有限公司 | High mobility gallium nitride semiconductor device and method for manufacturing the same |
| CN107331699A (en) * | 2017-08-16 | 2017-11-07 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices and its preparation method and application |
| CN108054097A (en) * | 2017-12-13 | 2018-05-18 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices and preparation method thereof |
| CN108054097B (en) * | 2017-12-13 | 2020-12-18 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor device and preparation method thereof |
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