CN206244651U - Can tempering low radiation coated glass high - Google Patents
Can tempering low radiation coated glass high Download PDFInfo
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- CN206244651U CN206244651U CN201621275743.0U CN201621275743U CN206244651U CN 206244651 U CN206244651 U CN 206244651U CN 201621275743 U CN201621275743 U CN 201621275743U CN 206244651 U CN206244651 U CN 206244651U
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Abstract
The utility model is related to coated glass technical field; specifically related to one kind can tempering low radiation coated glass high; the glass includes substrate of glass and is deposited on the film plating layer of the glass basic surface, and the film plating layer includes the first medium layer, the first grown layer, the first protective layer, silver layer, the second protective layer, the second grown layer and the second dielectric layer that from inside to outside stack gradually.Coated glass of the present utility model includes grown layer, silver layer and protective layer, using Ar and H2For mixing sputter gas replace original Ar and O2Mixing sputter gas, the introducing for reducing O in sputter procedure avoids the oxidation of protective layer and silver layer so that the adhesion of film layer is greatly improved, and contributes to being processed further for low radiation coated glass；Additionally, the incorporation of H forms the AZO of stabilization:H（Or GZO:H、IZO:H）Transparent conductive oxide causes that low-radiation film layer resistivity further declines, and infrared external reflection enhancing, light thermal property is further improved.
Description
Technical field
The utility model is related to coated glass technical field, and in particular to one kind can tempering low radiation coated glass high.
Background technology
LOW-E coated glasss, also known as low radiation coated glass, are to be coated with one or more layers tool in common Float Glass Surface
The nanometer functional films that have infrared external reflection characteristic and the energy saving building product that constitutes.The coated glass product visible light transmissivity
Height, possesses and intercepts very much ultrared feature by force, can play the double effects of natural lighting and heat-insulating and energy-saving.Can effectively subtract
The outer diffusing of heat is lost in winter room less, the secondary radiation after summer can intercept outdoor objects by sunlight heating, from
And play energy-saving effect.
High-transparency list silver LOW-E coated glasss have visible light transmissivity higher and solar energy light transmission rate so that
Daylighting nature, effect is penetrating, utilization rate more and more higher.Due to the ZnO that LOW-E coated glasss typically select doping high thoroughly (such as
AZO, GZO, IZO) transparent conductive oxide, as grown layer, needs to be passed through appropriate O during being coated with2Ensure the crystal of ZnO
Structural integrity, to obtain high-quality Ag layers.But the O being passed through2Often go here and there to metal area and cause coat of metal and silver
The oxidation of layer, causes film layer machining property bad, is unfavorable for that processor uses.
In consideration of it, overcoming above defect of the prior art, there is provided it is a kind of it is new can tempering low radiation coated glass high
As this area technical problem urgently to be resolved hurrily.
The content of the invention
The purpose of this utility model is the drawbacks described above for prior art, there is provided one kind can tempering Low emissivity plating high
Film glass.
The purpose of this utility model can be realized by following technical measures：
One kind can tempering low radiation coated glass high, compared with prior art, its difference is that the glass includes
Substrate of glass and the film plating layer for being deposited on the glass basic surface, the film plating layer include from inside to outside stack gradually first
Dielectric layer, the first grown layer, the first protective layer, silver layer, the second protective layer, the second grown layer and second dielectric layer, wherein, it is described
First grown layer and the second grown layer are the ZnO film layer that the 3rd main group metal and H are co-doped with, the 3rd main group metal be Al,
Ga or In.
Preferably, the first medium layer and second dielectric layer are Si3N4Layer, the first medium layer and second medium
The thickness of layer is 25~60nm.
Preferably, the thickness of first grown layer and the second grown layer is 5~40nm.
Preferably, first grown layer and/or the second grown layer are the AZO film layers of 2wt% doping, 5wt% doping
GZO film layers or the IZO film layers of 10wt% doping.
Preferably, first grown layer and/or the second grown layer are formed by sputtering, wherein, the target of sputtering is doping
The ZnO of the 3rd main group metal, sputters at and carry out in the mixed-gas atmosphere of argon gas and hydrogen, the 3rd main group metal be Al,
Ga or In.
Preferably, first protective layer and the second protective layer are NiCr layers, and first protective layer and second are protected
The thickness of layer is 0.5~2nm.
Preferably, the thickness of the silver layer is 8~20nm.
Coated glass of the present utility model includes grown layer, silver layer and protective layer, using Ar and H2It is mixing sputter gas
Replace original Ar and O2Mixing sputter gas, the introducing for reducing O in sputter procedure avoids the oxidation of protective layer and silver layer, makes
The adhesion for obtaining film layer is greatly improved, and contributes to being processed further for low radiation coated glass；Additionally, the incorporation of H forms stabilization
AZO:H (or GZO:H、IZO:H) transparent conductive oxide causes that low-radiation film layer resistivity further declines, and infrared external reflection increases
By force, light thermal property is further improved.
Brief description of the drawings
Fig. 1 is the structural representation of coated glass of the present utility model.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with the accompanying drawings and specifically
Embodiment is described in further detail to the utility model.It should be appreciated that specific embodiment described herein is only used to solve
The utility model is released, is not used to limit the utility model.
Coated glass of the present utility model includes substrate of glass and is deposited on the film plating layer of the glass basic surface, described
Film plating layer include from inside to outside stack gradually first medium layer, the first grown layer, the first protective layer, silver layer, the second protective layer,
Second grown layer and second dielectric layer, wherein, first grown layer and the second grown layer are the 3rd main group metal and are co-doped with H
ZnO film layer, the 3rd main group metal be Al, Ga or In.
There is offer free electron in H, H can eliminate crystal boundary in addition in the lattice of AZO in the form of hydrogen gap (Hi)
Defect, promotes the crystallization of crystal.AZO crystallinity improves with the increase of H flows, while resistivity declines, works as H2Flow reaches
It is optimal during to 6%, work as H2When flow further increases, H plasmas cause corrosion to AZO crystal, and crystal property is deteriorated on the contrary.
In an implementation method of the present utility model, the thickness of the first grown layer and the second grown layer is 5~40nm.In this practicality
In a new preferred embodiment, the first grown layer and/or the second grown layer are AZO film layers, the 5wt% of 2wt% doping
The IZO film layers of GZO film layers or the 10wt% doping of doping；AZO is to mix aluminium (Al) zinc oxide (ZnO), the AZO films of 2wt% doping
Layer represents that the doping of aluminium (Al) is 2wt%；To mix gallium (Ga) zinc oxide (ZnO), the GZO film layers of 5wt% doping represent gallium to GZO
(Ga) doping is 5wt%；IZO is indium-doped (In) zinc oxide (ZnO), and the IZO film layers of 10wt% doping represent indium (In)
Doping is 10wt%.In one of the present utility model more preferably implementation method, the first grown layer and/or the second grown layer by
Sputtering is formed, wherein, the target of sputtering is the ZnO of the 3rd main group metal of doping, sputters at the mixed gas gas of argon gas and hydrogen
Carried out in atmosphere, the 3rd main group metal is Al, Ga or In.In a most preferred embodiment of the present utility model, argon gas
It is 1~12% with the flow accounting of hydrogen in the mixed gas of hydrogen.
In an implementation method of the present utility model, the first protective layer and the second protective layer are NiCr layers, and first protects
The thickness of sheath and the second protective layer is 0.5~2nm.
In an implementation method of the present utility model, the thickness of silver layer is 8~20nm.
In an implementation method of the present utility model, first medium layer and second dielectric layer are Si3N4Layer, in addition, the
The thickness of one dielectric layer and second dielectric layer is 25~60nm.
The utility model accordingly provide it is above-mentioned can tempering low radiation coated glass high manufacture method method, bag
Include following steps：
(1) substrate of glass is provided；
(2) first medium layer is deposited on the glass substrate；
(3) the first grown layer is deposited on first medium layer；
(4) the first protective layer is deposited on the first grown layer；
(5) depositing silver layers on the first protective layer；
(6) the second protective layer is deposited on silver layer；
(7) the second grown layer is deposited on the second protective layer；
(8) second dielectric layer is deposited on the second grown layer.
Wherein, the first grown layer and the second grown layer in step (3) and step (7) are formed by sputtering, wherein, sputtering
Target is the ZnO of the 3rd main group metal of adulterating, and sputters at and carry out in the mixed-gas atmosphere of argon gas and hydrogen, the 3rd main group
Metal is Al, Ga or In.
Further, the flow accounting of hydrogen is 1~12% in the mixed gas of the argon gas and hydrogen.
Specifically, the first grown layer and the second grown layer sputter the 3rd main group metal of doping by pulsed dc magnetron
ZnO (such as AZO, GZO, IZO) ceramic target is coated with, and target consistency is more than 99.5%, and sputtering atmosphere is Ar/H2=1-12%.Splash
H2 ionization is H plasmas during penetrating, and AZO is collectively forming with doping metals in mixing ZnO lattices in thin film growth process:
H, (or GZO:H、IZO:H) transparent conductive oxide, improves its electric conductivity and stability.
In the utility model, the technological parameter of depositing operation and depositing operation for dielectric layer, protective layer and silver layer
Do not limit specifically, it is preferable that in the utility model, first medium layer, the first protective layer, silver layer, the second protective layer and
Second dielectric layer can be deposited using sputtering method.For various deposition process of the prior art, those skilled in the art
Composition and thickness according to target layer select suitable or preferred deposition process parameters, wherein, technological parameter includes relating to
And sputtering atmosphere, target material, the sputtering time for arriving.
In an implementation method of the present utility model, first medium layer and second dielectric layer are by AC magnetic controlled sputtered silicon
Aluminium alloy target is coated with, and than Si/Al=90/10, sputtering atmosphere is Ar and N to weight in target2, gas flow ratio Ar/N2=5/6.
In an implementation method of the present utility model, two protective layers are coated with by magnetically controlled DC sputtering nichrome target,
Than Ni/Cr=80/20, sputtering atmosphere is Ar to weight in target.
In an implementation method of the present utility model, metallic silver layer is coated with by magnetically controlled DC sputtering metallic silver target, target
Material purity is more than 99.9%.
Embodiment 1：
A kind of coated glass is present embodiments provided, the coated glass is single silver LOW-E coated glasss, including substrate of glass
And the various film layers being coated with thereon, film layer has 7 film layers from inside to outside, is followed successively by first medium layer Si3N4, thickness is 50nm,
It is main to act the Na prevented in float glass substrate+,Ca2+Deng effect from foreign ion to the diffusion in film layer；First grown layer is
AZO:H, (H2Flow-rate ratio is that 6%), the doping of Al is 2wt%, and thickness is 35nm, is delayed for silver layer growth provides preferably growth
Rush layer；First protective layer is NiCr, and thickness is 1.5nm, it is to avoid silverskin is subject to etch in sputter procedure；Silver thickness be 12nm,
It is the major function layer of LOW-E films；Second protective layer is NiCr, and thickness is 2nm, the oxygen pair prevented in following process toughening process
The destruction of silver layer, it is AZO to have very good anti-chemistry and the grown layer of mechanical performance second for coating:H, thickness is
35nm, mainly forms symmetrical structure with the first grown layer, and it is Si to reduce stress in thin film, second dielectric layer3N4, thickness is 55nm,
It assures that whole LOW-E film layers have good machining property.
This can the structure of steel low radiation coated glass product high be：
Glass/Si3N4/AZO:H/NiCr/Ag/AZO:H/NiCr/Si3N4
It is after table 1-1. products 6mm is strengthened and hollow into 6LOW-E+12A+6 product optical properties
It is after table 1-2. products 6mm is strengthened and hollow into 6LOW-E+12A+6 product optical properties
Embodiment 2：
A kind of coated glass is present embodiments provided, the coated glass is single silver LOW-E coated glasss, including substrate of glass
And the various film layers being coated with thereon, film layer has 7 film layers from inside to outside, is followed successively by first medium layer Si3N4, thickness is 50nm,
It is main to act the Na prevented in float glass substrate+,Ca2+Deng effect from foreign ion to the diffusion in film layer；First grown layer is
GZO:H, (H2Flow-rate ratio is that 6%), the doping of Ga is 5wt%, and thickness is 35nm, is delayed for silver layer growth provides preferably growth
Rush layer；First protective layer is NiCr, and thickness is 1.5nm, it is to avoid silverskin is subject to etch in sputter procedure；Silver thickness be 12nm,
It is the major function layer of LOW-E films；Second protective layer is NiCr, and thickness is 2nm, the oxygen pair prevented in following process toughening process
The destruction of silver layer, it is GZO to have very good anti-chemistry and the grown layer of mechanical performance second for coating:H, thickness is
35nm, mainly forms symmetrical structure with the first grown layer, and it is Si to reduce stress in thin film, second dielectric layer3N4, thickness is 55nm,
It assures that whole LOW-E film layers have good machining property.
This can the structure of steel low radiation coated glass product high be：
Glass/Si3N4/GZO:H/NiCr/Ag/GZO:H/NiCr/Si3N4
It is after table 2-1. products 6mm is strengthened and hollow into 6LOW-E+12A+6 product optical properties
It is after table 2-2. products 6mm is strengthened and hollow into 6LOW-E+12A+6 product optical properties
Embodiment 3：
A kind of coated glass is present embodiments provided, the coated glass is single silver LOW-E coated glasss, including substrate of glass
And the various film layers being coated with thereon, film layer has 7 film layers from inside to outside, is followed successively by first medium layer Si3N4, thickness is 50nm,
It is main to act the Na prevented in float glass substrate+,Ca2+Deng effect from foreign ion to the diffusion in film layer；First grown layer is
IZO:H, (H2Flow-rate ratio is that 6%), the doping of In is 10wt%, and thickness is 35nm, for silver layer growth provides preferably growth
Cushion；First protective layer is NiCr, and thickness is 1.5nm, it is to avoid silverskin is subject to etch in sputter procedure；Silver thickness is
12nm, be LOW-E films major function layer；Second protective layer is NiCr, and thickness is 2nm, prevent following process toughening process
Destruction of the oxygen to silver layer, it is IZO to have very good anti-chemistry and the grown layer of mechanical performance second for coating:H, thickness
It is 35nm, mainly forms symmetrical structure with the first grown layer, it is Si to reduce stress in thin film, second dielectric layer3N4, thickness is
55nm, it assures that whole LOW-E film layers have good machining property.
This can the structure of steel low radiation coated glass product high be：
Glass/Si3N4/IZO:H/NiCr/Ag/IZO:H/NiCr/Si3N4
It is after table 3-1. products 6mm is strengthened and hollow into 6LOW-E+12A+6 product optical properties
It is after table 3-2. products 6mm is strengthened and hollow into 6LOW-E+12A+6 product optical properties
Preferred embodiment of the present utility model is the foregoing is only, is not used to limit the utility model, it is all at this
Any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (7)
1. one kind can tempering low radiation coated glass high, it is characterised in that the glass includes substrate of glass and is deposited on described
The film plating layer of glass basic surface, the film plating layer includes the first medium layer, the first grown layer, that from inside to outside stack gradually
One protective layer, silver layer, the second protective layer, the second grown layer and second dielectric layer, wherein, first grown layer and second grows
Layer is the ZnO film layer that the 3rd main group metal is co-doped with H, and the 3rd main group metal is Al, Ga or In.
2. according to claim 1 can tempering low radiation coated glass high, it is characterised in that the first medium layer and
Second dielectric layer is Si3N4The thickness of layer, the first medium layer and second dielectric layer is 25~60nm.
3. according to claim 1 can tempering low radiation coated glass high, it is characterised in that first grown layer and
The thickness of the second grown layer is 5~40nm.
4. according to claim 3 can tempering low radiation coated glass high, it is characterised in that first grown layer
And/or second grown layer be 2wt% doping AZO film layers, 5wt% doping GZO film layers or 10wt% doping IZO film layers.
5. according to claim 3 or 4 can tempering low radiation coated glass high, it is characterised in that first growth
Layer and/or the second grown layer are formed by sputtering, wherein, the target of sputtering is the ZnO of the 3rd main group metal of doping, sputters at argon gas
Carried out with the mixed-gas atmosphere of hydrogen, the 3rd main group metal is Al, Ga or In.
6. according to claim 1 can tempering low radiation coated glass high, it is characterised in that first protective layer and
Second protective layer is NiCr layers, and the thickness of first protective layer and the second protective layer is 0.5~2nm.
7. according to claim 1 can tempering low radiation coated glass high, it is characterised in that the thickness of the silver layer is
8~20nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621275743.0U CN206244651U (en) | 2016-11-25 | 2016-11-25 | Can tempering low radiation coated glass high |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106431012A (en) * | 2016-11-25 | 2017-02-22 | 武汉长利新材料科技有限公司 | Temperable high-transparency and low-radiation coated glass and manufacturing method thereof |
| CN114203340A (en) * | 2021-12-16 | 2022-03-18 | 西湖大学 | Conducting film |
| CN115807209A (en) * | 2022-11-23 | 2023-03-17 | 核工业西南物理研究院 | Coating structure applied to window film |
-
2016
- 2016-11-25 CN CN201621275743.0U patent/CN206244651U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106431012A (en) * | 2016-11-25 | 2017-02-22 | 武汉长利新材料科技有限公司 | Temperable high-transparency and low-radiation coated glass and manufacturing method thereof |
| CN114203340A (en) * | 2021-12-16 | 2022-03-18 | 西湖大学 | Conducting film |
| CN115807209A (en) * | 2022-11-23 | 2023-03-17 | 核工业西南物理研究院 | Coating structure applied to window film |
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