CN206210772U - A kind of power model with heat sinking function - Google Patents
A kind of power model with heat sinking function Download PDFInfo
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- CN206210772U CN206210772U CN201621311954.5U CN201621311954U CN206210772U CN 206210772 U CN206210772 U CN 206210772U CN 201621311954 U CN201621311954 U CN 201621311954U CN 206210772 U CN206210772 U CN 206210772U
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- solder
- dbc substrates
- lower floor
- heat
- dbc
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Abstract
The utility model is related to a kind of power model with heat sinking function, including heat-dissipating casing and power model unit, each first semiconductor chip, each second semiconductor and signal end and electrode welding are fixed on lower floor's DBC substrates and are isolated by solder mask on lower floor's DBC substrates, the solder heat solid welding in lower solder apertures that upper strata DBC substrates pass through the solder in upper solder apertures and lower floor's DBC substrates is determined and forms the connection of circuit, upper strata DBC substrates form fixing shell with lower floor's DBC substrates surrounding by insulating materials plastic packaging, and each signal end and each electrode tip stretch out fixing shell；Cavity that power model unit is plugged on heat-dissipating casing is simultaneously fixed with heat-dissipating casing.The utility model is rational in infrastructure, effectively reduces stray inductance, improves the reliability of module, and heat-dissipating casing is placed in into cooling radiating comprehensive to power model unit in the passage of air blast cooling or water-cooled, greatly improves radiating efficiency.
Description
Technical field
The utility model is related to a kind of power model with heat sinking function, belongs to power model technical field.
Background technology
Power semiconductor modular is a kind of standard external dimensions and non-standard profiles size module product.Power semiconductor mould
Block is applied to automotive field, and high current is high-power, it is necessary to accomplish small rapid heat dissipation, thermal resistance, install convenient, small volume.
With the development of technology, the requirement to the power density and unfailing performance of power model now improving year by year, and
The structure of existing power model is in the presence of a larger bottleneck：The power more and more higher of power device, the work(of semiconductor chip
Consumption also gradually increasing, often the heat produced by semiconductor chip is also increasing, such as semiconductor chip heat not in time
Shed, the service behaviour of power model can be had a strong impact on.And power model is mostly connected using one side with radiator at present, and it is single
Face cannot realize quick heat radiating.Moreover because semiconductor chip is bonded using aluminium wire, the reliability for using not only is influenced whether, and
And stray inductance cannot be further reduced, and switching loss can be influenceed, the raising of switching frequency is limited, therefore be applied to high-power
Motor demand is just extremely difficult.
Utility model content
The purpose of this utility model is to provide a kind of rational in infrastructure, effectively reduces stray inductance, improves the reliability of module,
And a kind of power model with heat sinking function of radiating efficiency can be greatly improved.
The utility model is that the technical scheme for reaching above-mentioned purpose is：A kind of power model with heat sinking function, its feature
It is：Including heat-dissipating casing and power model unit, described power model unit includes upper strata DBC substrate, lower floor's DBC bases
Plate, multiple first semiconductor chips, multiple second semiconductor chips and signal end and electrode, it is each first semiconductor chip, each
Second semiconductor chip and signal end and electrode welding are fixed on lower floor's DBC substrates and by the lower resistance on lower floor's DBC substrates
Layer is isolated, the upper solder mask of the upper strata DBC substrates correspond to each first semiconductor chip, each second semiconductor chip and under
Layer DBC substrates are provided with solder apertures, and upper strata DBC substrates are by the solder in upper solder apertures and each first semiconductor chip, each the
Solder heat solid welding in the lower solder apertures of two semiconductor chips and lower floor's DBC substrates is determined and forms the connection of circuit, and upper strata DBC
Substrate forms fixing shell, the base plate of upper strata DBC substrates and lower floor with the surrounding of lower floor's DBC substrates by insulating materials plastic packaging
The base plate of DBC substrates is located at the both ends of the surface of fixing shell, and signal end and electrode stretch out fixing shell；Described heat-dissipating casing includes
For placing the cavity of power model unit and multiple thermal columns of periphery evagination, power model unit is plugged on heat-dissipating casing
Cavity is simultaneously fixed with heat-dissipating casing, and the base plate of upper strata DBC substrates and the base plate of lower floor's DBC substrates are fitted with heat-dissipating casing, electrode
It is located at outside fixing shell with signal end.
The utility model power model unit uses upper strata DBC substrates and lower floor's DBC board structures, by each first semiconductor
Chip, each second semiconductor chip and electrode tip and signal end are welded on lower DBC substrates, and by lower floor's DBC substrates
The isolation of lower solder mask, and the solder mask of upper strata DBC substrates correspond to each first semiconductor chip, each second semiconductor chip and
Lower floor's DBC substrates are provided with solder apertures, and upper strata DBC substrates are by the solder in upper solder apertures and each first semiconductor chip, each
Solder heat solid welding in the lower solder apertures of the second semiconductor chip and lower floor's DBC substrates is determined and forms the connection of circuit, therefore
Welded by solder and replace aluminium wire to be bonded, effectively reduce stray inductance, improve the reliability of module, while cost-effective, letter
Manufacturing procedure is changed.Surrounding plastic packaging is formed solid by the utility model upper strata DBC substrates with lower floor DBC substrates using insulating materials
Determine shell, assembling sealing is carried out by carrying out plastic packaging to upper strata DBC substrates and lower floor DBC substrates, accomplish electrical isolation and guarantor
Shield is acted on.The utility model heat-dissipating casing includes multiple radiatings of the cavity and periphery evagination for placing power model unit
Post, the cavity that power model unit can be plugged on heat-dissipating casing is simultaneously fixed with heat-dissipating casing, due to the bottom of upper strata DBC substrates
The two sides that base plate on plate and lower floor's DBC substrates is located at fixing shell is fitted with heat-dissipating casing, and heat-dissipating casing is placed in into pressure wind
Cooled down in cold or water-cooled passage, realized the heat-dissipating casing cooling radiating comprehensive to power model unit, it is and traditional
Heat dissipating method is compared, can at double heat radiation speed and improve radiating efficiency, it is ensured that the long-time of power model high efficient and reliable
Use, improve the service life of power model.The utility model by power model unit be sealing on heat-dissipating casing, and can lead to
Thermal column is crossed on heat-dissipating casing to increase area of dissipation, and the mode that power model unit is directly inserted in heat-dissipating casing is installed,
Location hole need not be opened, it is easy for installation.
Brief description of the drawings
Embodiment of the present utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is a kind of structural representation of the power model with heat sinking function of the utility model.
Fig. 2 is the structural representation of the utility model power model unit.
Fig. 3 is 2 backsight structural representation.
The structural representation of Tu4Shi the utility model lower floor DBC substrates.
Fig. 5 is the structural representation of the utility model upper strata DBC substrates.
Fig. 6 is the structural representation of the utility model heat-dissipating casing.
Wherein：1-signal end, 1-1-gate signal end, 1-2-emitter signal end, 2-electrode, 2-1-emitter stage,
2-2-public electrode, 2-3-colelctor electrode, 3-heat-dissipating casing, 3-1-thermal column, 3-2-cavity, 3-3-limited ring dais, 4-
Fixing shell, 5-upper strata DBC substrates, 5-1-gate signal extension, 5-2-public electrode extension, 6-lower floor
DBC substrates, 6-1-gate signal region, 6-2-emitter signal region, 6-3-emitter region, 6-4-common electrode area
Domain, 6-5-collector region, 6-6-gate signal extension, the extreme extension of 6-7-common electrical, 7-the second half leads
Body chip, the 8-the first semiconductor chip, 9-lower solder mask, 9-1-lower solder apertures, 10-upper solder mask, 10-1-upper solder
Hole.
Specific embodiment
As shown in Fig. 1~6, a kind of power model with heat sinking function of the utility model, including heat-dissipating casing 3 and power mould
Module unit.As shown in Fig. 1~5, the utility model power model unit includes upper strata DBC substrate 5, lower floor DBC substrates 6, multiple
First semiconductor chip 8, multiple second semiconductor chips 7 and signal end 1 and electrode 2, the semiconductor core of the utility model first
Piece 8 is using metal-oxide-semiconductor, IGBT or IGCT, and the second semiconductor chip 7 uses diode chip for backlight unit or FRED chips, and each the first half
Conductor chip 8, each second semiconductor chip 7 and signal end 1 and electrode 2 are weldingly fixed on lower floor DBC substrates 6 and by lower floor
Lower solder mask 9 on DBC substrates 6 is isolated, and domain is printed with lower floor DBC substrates 6, by the first semiconductor chip 8 and the second half
Conductor chip 7 and signal end 1 and electrode 2 are welded on corresponding chip area, signal area and electrode on lower floor DBC substrates 6
Isolate in region and by lower solder mask 9.
As shown in Fig. 2~5, there is upper solder mask 10 on the utility model upper strata DBC substrate 5, upper strata DBC substrate 5 it is upper
Solder mask 10 is provided with solder apertures corresponding to each first semiconductor chip 8, each second semiconductor chip 7 and lower floor DBC substrates 6
10-1, upper strata DBC substrates 5 are by the solder in upper solder apertures 10-1 and each first semiconductor chip 8, each second semiconductor chip
Solder heat solid welding in the lower solder apertures 9-1 of 7 and lower floor DBC substrates 6 is determined and forms the connection of circuit.
As shown in Fig. 1~5, the utility model signal end 1 includes gate signal end 1-1 and emitter signal end 1-2, lower floor
The lower solder mask 9 of DBC substrates 6 solder apertures 9-1 in the case where gate signal extension 6-6 is provided with multiple, upper strata DBC substrate 5 it is upper
Solder apertures 10-1 on corresponding is provided with gate signal extension 5-1 on solder mask 10, upper strata DBC substrates 5 are by upper solder
The solder heat solid welding in the lower solder apertures 9-1 on solder and lower floor DBC substrates 6 in the 10-1 of hole is determined, and makes gate signal lead division
Divide conducting, and be connected with the gate signal end 1-1 on the gate signal region 6-1 being welded on lower floor DBC substrates 6, by door
Pole signal end 1-1 is connected with external circuit.As shown in Fig. 4,5, the upper solder mask 10 of the utility model upper strata DBC substrate 5 it is upper
Solder and the emitter signal of each first semiconductor chip 8 and the emitter stage of each second semiconductor chip 7 in solder apertures 10-1
Signal welding conducting, by the emitter signal end 1-2 and the outside that are welded on the emitter signal region 6-2 of lower floor DBC substrates 6
Circuit is connected.
As shown in Fig. 4,5, the utility model electrode 2 includes the public electrode 2-2 at the middle part and emitter stage 2-1 of its both sides
With colelctor electrode 2-3, the lower solder mask 9 of lower floor DBC substrates 6 is provided with lower solder apertures 9-1 on the extreme extension 6-7 of common electrical,
On the upper solder mask 10 of upper strata DBC substrate 5 solder apertures 10-1 on corresponding, upper strata DBC are provided with public electrode extension 5-2
The solder heat solid welding in lower solder apertures 9-1 that substrate 5 passes through the solder in upper solder apertures 10-1 and lower floor DBC substrates 6 is determined, and makes public affairs
The extreme extension conducting of common-battery, public electrode 2-2 is welded on the public electrode region 6-4 of lower floor DBC substrates 6 and and common electrical
Extreme extension connection, and emitter stage 2-1 and colelctor electrode 2-3 are then welded on the corresponding emitter region 6-3 of lower floor DBC substrates 6
With collector region 6-5, it is connected with external circuit by emitter stage 2-1 and colelctor electrode 2-3.
As shown in Fig. 1~3, the utility model upper strata DBC substrate 5 is moulded with the surrounding of lower floor DBC substrates 6 by insulating materials
Envelope forms fixing shell 4, and the base plate of upper strata DBC substrate 5 and the base plate of lower floor DBC substrates 6 are located at the both ends of the surface of fixing shell 4,
Signal end 1 and electrode 2 stretch out fixing shell 4, and plastic packaging is carried out to upper strata DBC substrate 5 and lower floor DBC substrates 6 by insulating materials
Technique, assembles to power model unit and seals, and accomplishes that electrical isolation is acted on,
As shown in Fig. 1,6, the utility model heat-dissipating casing 3 includes cavity 3-2 for placing power model unit and outer
Multiple thermal column 3-1 of all evaginations, the area of dissipation of heat-dissipating casing 3 is increased by multiple thermal column 3-1, and is further improved
Radiating efficiency, the section of thermal column 3-1 of the present utility model can be circular or polygon, and it is outer that power model unit is plugged on radiating
The cavity 3-2 of shell 3 is simultaneously fixed with many heat-dissipating casings 3, the base plate of upper strata DBC substrate 5 and the base plate of lower floor DBC substrates 6 and radiating
Shell 3 is fitted, and electrode 2 and signal end 1 are located at outside fixing shell 4, to realize the connection with external circuit, upper strata DBC substrate 5
Base plate and the base plate of lower floor DBC substrates 6 be copper soleplate or aluminum soleplate, by copper soleplate or aluminum soleplate by upper strata DBC substrate 5
With the heat derives on lower floor DBC substrates 6 to heat-dissipating casing 3, heat-dissipating casing 3 is placed in water channel or air channel, by forcing wind
Cold or water-cooled is comprehensive to heat-dissipating casing 3 to radiate to power model.
Claims (5)
1. a kind of power model with heat sinking function, it is characterised in that：It is described including heat-dissipating casing (3) and power model unit
Power model unit include upper strata DBC substrates (5), lower floor DBC substrates (6), multiple first semiconductor chips (8), Duo Ge
Two semiconductor chips (7) and signal end (1) and electrode (2), each first semiconductor chip (8), each second semiconductor chip (7)
And signal end (1) and electrode (2) are weldingly fixed on lower floor DBC substrates (6) and by the lower welding resistance on lower floor DBC substrates (6)
Layer (9) isolation, the upper solder mask (10) of the upper strata DBC substrates (5) is corresponding to each first semiconductor chip (8), each the second half
Conductor chip (7) and lower floor DBC substrates (6) are provided with solder apertures (10-1), and upper strata DBC substrates (5) is by upper solder apertures (10-
1) the lower solder apertures of solder in and each first semiconductor chip (8), each second semiconductor chip (7) and lower floor DBC substrates (6)
Solder heat solid welding in (9-1) is determined and forms the connection of circuit, and upper strata DBC substrates (5) and lower floor DBC substrates (6) surrounding
Side forms fixing shell (4), the base plate on upper strata DBC substrates (5) and the base plate of lower floor DBC substrates (6) by insulating materials plastic packaging
Positioned at the both ends of the surface of fixing shell (4), signal end (1) and electrode (2) stretch out fixing shell (4)；Described heat-dissipating casing (3) bag
Include the cavity (3-2) and multiple thermal columns (3-1) of periphery evagination for placing power model unit, power model unit grafting
In the cavity (3-2) and, the base plate and lower floor DBC substrate on upper strata DBC substrate (5) fixed with heat-dissipating casing (3) of heat-dissipating casing (3)
(6) base plate is fitted with heat-dissipating casing (3), and electrode (2) and signal end (1) are outside positioned at fixing shell (4).
2. a kind of power model with heat sinking function according to claim 1, it is characterised in that：Described signal end (1)
Including gate signal end (1-1) and emitter signal end (1-2), the lower solder mask (9) of lower floor DBC substrates (6) is in gate signal
Extension (6-6) is provided with solder apertures (9-1) under multiple, and the upper solder mask (10) on upper strata DBC substrates (5) draws in upper gate signal
Go out part (5-1) and be provided with corresponding upper solder apertures (10-1), the upper solder mask (10) on upper strata DBC substrates (5) is by upper solder apertures
The solder heat solid welding in solder lower solder apertures (9-1) corresponding with lower floor DBC substrates (6) in (10-1) is determined, and makes gate signal
Extension is turned on, and solder in the upper solder apertures (10-1) of the upper solder mask (10) on upper strata DBC substrates (5) is led with each the first half
The emitter signal welding conducting of the emitter signal of body chip (8) and each second semiconductor chip (7).
3. a kind of power model with heat sinking function according to claim 1, it is characterised in that：The electrode (2) includes
The public electrode (2-2) at middle part and the emitter stage (2-1) of its both sides and colelctor electrode (2-3), the lower resistance of lower floor DBC substrates (6)
Layer (9) is provided with lower solder apertures (9-1), the upper solder mask on upper strata DBC substrates (5) in the extreme extension of common electrical (6-7)
(10) corresponding upper solder apertures (10-1) are provided with public electrode extension (5-2), upper strata DBC substrates (5) is by upper solder
Solder in hole (10-1) is determined with the solder heat solid welding in the lower solder apertures (9-1) of lower floor DBC substrates (6), makes common electrical extreme
Extension is turned on, and public electrode (2-2) is welded on the public electrode region (6-4) of lower floor DBC substrates (6) and and public electrode
End extension connection.
4. a kind of power model with heat sinking function according to claim 1, it is characterised in that：The first described semiconductor
Chip (8) is using metal-oxide-semiconductor, IGBT or IGCT.
5. a kind of power model with heat sinking function according to claim 1, it is characterised in that：The second described semiconductor
Chip (7) uses diode chip for backlight unit or FRED chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621311954.5U CN206210772U (en) | 2016-12-01 | 2016-12-01 | A kind of power model with heat sinking function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621311954.5U CN206210772U (en) | 2016-12-01 | 2016-12-01 | A kind of power model with heat sinking function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206210772U true CN206210772U (en) | 2017-05-31 |
Family
ID=58754729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621311954.5U Withdrawn - After Issue CN206210772U (en) | 2016-12-01 | 2016-12-01 | A kind of power model with heat sinking function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206210772U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384728A (en) * | 2016-12-01 | 2017-02-08 | 江苏宏微科技股份有限公司 | Power module with heat radiation function |
| CN109427707A (en) * | 2017-08-31 | 2019-03-05 | 华中科技大学 | A kind of the three-dimension packaging structure and packaging method of power device |
| CN114096115A (en) * | 2021-10-15 | 2022-02-25 | 华为数字能源技术有限公司 | Power supply shell, power supply conversion device and electronic equipment |
-
2016
- 2016-12-01 CN CN201621311954.5U patent/CN206210772U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384728A (en) * | 2016-12-01 | 2017-02-08 | 江苏宏微科技股份有限公司 | Power module with heat radiation function |
| CN106384728B (en) * | 2016-12-01 | 2019-03-12 | 江苏宏微科技股份有限公司 | Power module with heat sinking function |
| CN109427707A (en) * | 2017-08-31 | 2019-03-05 | 华中科技大学 | A kind of the three-dimension packaging structure and packaging method of power device |
| CN109427707B (en) * | 2017-08-31 | 2020-07-07 | 华中科技大学 | Three-dimensional packaging structure and packaging method of power device |
| CN114096115A (en) * | 2021-10-15 | 2022-02-25 | 华为数字能源技术有限公司 | Power supply shell, power supply conversion device and electronic equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170531 Effective date of abandoning: 20190312 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20170531 Effective date of abandoning: 20190312 |