CN206178305U - Display substrate and display device - Google Patents
Display substrate and display device Download PDFInfo
- Publication number
- CN206178305U CN206178305U CN201621245887.1U CN201621245887U CN206178305U CN 206178305 U CN206178305 U CN 206178305U CN 201621245887 U CN201621245887 U CN 201621245887U CN 206178305 U CN206178305 U CN 206178305U
- Authority
- CN
- China
- Prior art keywords
- grid line
- film transistor
- electrode
- thin film
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The utility model relates to a show technical field, disclose a display substrate and display device. Display substrates includes grid line and data line for inject a plurality of pixel regions. Display substrates includes a plurality of display element, and each display element is including setting up a pixel electrode and a thin film transistor in the pixel region correspond a pixel, and wherein, the orthographic projection of thin film transistor's drain electrode on display substrates place plane and the grid line orthographic projection part overlap on display substrates place plane forms overlapping area, thus can overlapping area welds to short circuit the pixel electrode and grid line, and cutting drain electrode make the test signal on the grid line transmit to the pixel electrode, harmfully maintain display device's pixel. For the purpose that reaches short circuit the pixel electrode and grid line, actual welded is drain electrode and grid line, because both are metal material, has improved the welding success rate, improves the maintenance success rate.
Description
Technical field
This utility model is related to display technology field, more particularly to a kind of display base plate and display device.
Background technology
In technical field of flat panel display, thin film transistor LCD device (Thin Film Transistor Liquid
Crystal Display, abbreviation TFT-LCD) have the advantages that small volume, low in energy consumption, manufacturing cost are relatively low, gradually working as
Modern flat pannel display market occupies leading position.
The primary structure of TFT-LCD is the array base palte to box and color membrane substrates.Array base palte includes many of cross-distribution
Bar grid line and a plurality of data lines, for limiting multiple pixel regions, each pixel region includes pixel electrode and thin film transistor (TFT),
Grid line is electrically connected with the gate electrode of thin film transistor (TFT), and data wire is electrically connected with the source electrode of thin film transistor (TFT), pixel electrode
It is electrically connected with thin film transistor (TFT) drain electrode, thin film transistor (TFT) is opened by control, to pixel electrode pixel voltage is transmitted.
TN types TFT-LCD use normal white mode.Often white mode be exactly light after the polaroid of downside, become line inclined
Shake light, by be not powered on press liquid crystal after, there occurs rotation effect, polarization direction is rotated by 90 °, just with upside polaroid
Optical axis direction is identical, so when liquid crystal is not powered, TFT-LCD is bright, it is normal white mode.For normal white mode, if giving birth to
Produce that pixel is bad is shown as bright spot in rear end during product, need to carry out dim spot maintenance, i.e. by cut off open-drain pole and
Connection between pixel electrode, and corresponding gate signal is incorporated into by the purpose that pixel electrode reaches dim spot by welding.
But, because pixel electrode is obtained by transparent conductive material, matter is crisp easily to burst apart, and causes welding success rate low.
Utility model content
This utility model provides a kind of display base plate and display device, to solve to draw gate line signals by welding manner
When entering to pixel electrode, low success rate of problem is welded.
To solve above-mentioned technical problem, a kind of display base plate is provided in this utility model embodiment, including：
A plurality of grid line and a plurality of data lines, the grid line and data wire cross-distribution limit multiple pixel regions；
Multiple display units, each display unit includes：
One is arranged on the pixel electrode in the pixel region；
One is used to transmit the thin film transistor (TFT) of voltage, the gate electrode and grid line of the thin film transistor (TFT) to the pixel electrode
Electric connection, source electrode and electrode data line is electrically connected with, drain electrode is electrically connected with pixel electrode, wherein,
The drain electrode the display base plate orthographic projection in the plane with the grid line in the display base plate institute
Orthographic projection part in the plane overlaps, and forms an overlapping region.
Display base plate as above, it is preferred that the thin film transistor (TFT) also includes active layer, the drain electrode includes
Part I and Part II, the Part I the display base plate orthographic projection in the plane exist with the active layer
The display base plate orthographic projection in the plane at least partly overlap, the Part II is in display base plate place plane
On orthographic projection and the active layer the display base plate orthographic projection in the plane do not overlap completely；
Wherein, the width of the Part II is more than the width of the Part I, and the Part II described aobvious
Show substrate orthographic projection in the plane and the grid line the display base plate orthographic projection part in the plane overlap, shape
Into the overlapping region.
Display base plate as above, it is preferred that characterized in that, the thin film transistor (TFT) includes gate electrode, it is described
Gate electrode is structure as a whole with the grid line；
The pixel electrode and thin film transistor (TFT) of each display unit is located at the opposite sides of grid line, and the drain electrode is from described
The side of grid line at least extends to the top of grid line, is electrically connected with corresponding pixel electrode.
Display base plate as above, it is preferred that there are two grid lines between two neighboring pixel region；
Each pixel region includes the pixel electrode of two settings that keep at a certain distance away on the bearing of trend of grid line, is located at
The corresponding thin film transistor (TFT) of adjacent two row pixel electrode of one data wire both sides and the electrode data line is electrically connected with, and from different grid
Line is electrically connected with.
Display base plate as above, it is preferred that thin film transistor (TFT) is located at two between two neighboring pixel region
Between grid line, and in the thin film transistor (TFT) of identical two grid lines, adjacent two thin film transistor (TFT)s are on the first plane
Orthographic projection part overlaps, and the bearing of trend of first plane and data wire is parallel and perpendicular to putting down that the display base plate is located
Face.
Display base plate as above, it is preferred that for two pixel electrodes of a pixel region, one of pixel
The corresponding thin film transistor (TFT) of electrode is electrically connected with a grid line for being located at the pixel region side, and one other pixel electrode pair should
Thin film transistor (TFT) with positioned at the pixel region relative opposite side a grid line electric connection.
Display base plate as above, it is preferred that arrange between two neighboring pixel region and there is the first grid line and the
Two grid lines；
The thin film transistor (TFT) includes first film transistor and the second thin film transistor (TFT), the first film transistor
First gate electrode is structure as a whole with first grid line, the second gate electrode and the second gate of second thin film transistor (TFT)
Line is structure as a whole；
The first gate electrode is located at the side away from second grid line of first grid line, second gate electrode
Between first grid line and the second grid line；
First grid line position corresponding with the second gate electrode has and second gate electrode shape cooperation
Bending structure.
A kind of display device, including display base plate as above are also provided in this utility model embodiment.
Above-mentioned technical proposal of the present utility model has the beneficial effect that：
In above-mentioned technical proposal, by arrange drain electrode in display base plate institute's orthographic projection in the plane with grid line in display
Substrate orthographic projection part in the plane overlap, form overlapping region, such that it is able to be welded in the overlapping region, with
Short circuit pixel electrode and grid line, and drain electrode is cut, the test signal on grid line is transmitted to pixel electrode, to display device
Pixel is bad to be keeped in repair.In order to reach the purpose of short circuit pixel electrode and grid line, actual welding is drain electrode and grid line, by
Metal material is in both, welding success rate is improve, is conducive to the repairable rate of product.
Description of the drawings
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the accompanying drawing to be used needed for description of the prior art is briefly described, it should be apparent that, drawings in the following description are only
It is some embodiments of the present utility model, for those of ordinary skill in the art, before creative labor is not paid
Put, can be with according to these other accompanying drawings of accompanying drawings acquisition.
Fig. 1 represents the structural representation one of display base plate in this utility model embodiment；
Fig. 2 represents the partial structural diagram of Fig. 1；
Fig. 3 represents the structural representation two of display base plate in this utility model embodiment；
Fig. 4 represents the partial structural diagram of Fig. 3.
Specific embodiment
Below in conjunction with drawings and Examples, specific embodiment of the present utility model is described in further detail.With
Lower embodiment is used to illustrate this utility model, but is not limited to scope of the present utility model.
With reference to shown in Fig. 1 and Fig. 3, a kind of display base plate is provided in this utility model embodiment, including：
A plurality of grid line 10 and a plurality of data lines 60, grid line 10 and the cross-distribution of data wire 60 limit multiple pixel regions；
Multiple display units, each display unit includes：
One is arranged on the pixel electrode 1 in the pixel region；
One is used to transmit the thin film transistor (TFT) of voltage, gate electrode 2 and the grid line 10 of the thin film transistor (TFT) to pixel electrode 1
It is electrically connected with, source electrode 3 is electrically connected with data wire 60, and drain electrode 4 is electrically connected with pixel electrode 1, wherein, drain electrode 4 exists
The display base plate the orthographic projection part friendship of orthographic projection in the plane with grid line 10 in display base plate institute in the plane
It is folded, form an overlapping region 100.
Correspondingly, the manufacture method of above-mentioned display base plate, including：
A plurality of grid line and a plurality of data lines are formed, the grid line and data wire cross-distribution limit multiple pixel regions；
The step of forming multiple display units, formation each display unit includes：
A pixel electrode is formed in the pixel region；
Formed one be used for the pixel electrode transmit voltage thin film transistor (TFT), the gate electrode of the thin film transistor (TFT) with
Grid line electric connection, source electrode and electrode data line is electrically connected with, drain electrode is electrically connected with pixel electrode, wherein, the drain electrode
Orthographic projection part of the orthographic projection on the underlay substrate with the grid line on the underlay substrate overlaps, and forms one and overlaps
Region.
The technical solution of the utility model arranges drain electrode 4 and exists in display base plate institute's orthographic projection in the plane and grid line 10
Display base plate orthographic projection part in the plane overlap, overlapping region 100 is formed, such that it is able near thin film transistor (TFT)
The neighbouring cutting drain electrode 4 of active layer is (for example：Dotted line cutting drain electrode 4 in Fig. 1 and Fig. 3), by drain electrode, 4 points is each other
The Part I 40 and Part II 41 of insulation, Part I 40 contacts setting, Part II with the active layer of thin film transistor (TFT)
41 are electrically connected with pixel electrode 1, and Part II 41 the display base plate orthographic projection in the plane exist with grid line 10
The display base plate orthographic projection part in the plane overlap, form overlapping region 100.And welded in overlapping region 100
Connect, the Part II 41 and grid line 10 of short circuit drain electrode 4, i.e. short circuit pixel electrode 1 and grid line 10.After short circuit success, Ke Yitong
Cross grid line 10 and transmit voltage signal to pixel electrode 1, it is bad to the pixel of display device to keep in repair.In order to reach short circuit pixel
The purpose of electrode 1 and grid line 10, actual welding be drain electrode 4 Part II 41 and grid line 10, because both are metal
Material, improves welding success rate, improves repairable rate.
It should be noted that each display unit in this utility model corresponds to a pixel, each display unit includes
One thin film transistor (TFT) and a pixel electrode.
Wherein, the gate electrode 2 of thin film transistor (TFT) can be integrally formed with grid line 10, be obtained by same grid metal film.Source
Electrode 3 can be integrally formed with data wire 60, and drain electrode 4 and source electrode 3 are same Rotating fields, by same drain metallic film system
.Grid metal and source and drain metal can be Cu, the metal such as Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and these metals
Alloy, grid metal film and drain metallic film can be single layer structure or multiple structure, multiple structure such as Cu Mo, Ti
Cu Ti, Mo Al Mo etc..Passivation layer is provided between drain electrode 4 and pixel electrode 1, drain electrode 4 and pixel electrode 1 can lead to
The via crossed in the passivation layer is electrically connected with.
Display base plate in the present embodiment can adopt double-gate structure, and concrete structure be：Between adjacent rows pixel region
Two grid lines 10, the doubles of grid line 10 are set.Each pixel region that grid line 10 and data wire 60 are limited includes two in grid
Keep at a certain distance away the pixel electrode 1 of setting on the bearing of trend of line 10, positioned at the adjacent two row pixel of the both sides of a data wire 60
The corresponding thin film transistor (TFT) of electrode 1 is electrically connected with the data wire 60, and is electrically connected with from different grid lines 10, so as to reduce
The data wire 60 of half, reduces frame, reduces production cost.For double-gate structure, each pixel region includes two pictures
Plain electrode, two pixels of correspondence.
For the ease of description, setting drain electrode 4 includes Part I 40 and Part II 41, Part I 40 and second
41 are divided to be structure as a whole, and Part I 40 contacts setting with the active layer of thin film transistor (TFT), i.e. Part I 40 is described aobvious
Show substrate orthographic projection in the plane and the active layer the display base plate orthographic projection in the plane it is at least part of
It is overlapping.Part II 41 is electrically connected with pixel electrode 1, and Part II 41 the display base plate just throwing in the plane
Shadow and the active layer the display base plate orthographic projection in the plane do not overlap completely.Wherein, Part II 41 is in institute
State display base plate the orthographic projection part of orthographic projection in the plane with grid line 10 in display base plate institute in the plane it is overlapping,
Form overlapping region 100.
In the present embodiment, the width for arranging the Part II 41 of drain electrode 4 is more than the width of Part I 40, by increasing
The width of Part II 41, can increase the area of the overlapping region 100 of formation, further improve welding success rate.
In order to realize drain electrode 4 the display base plate orthographic projection in the plane with grid line 10 in the display base plate
Orthographic projection part in the plane overlapping (hereinafter referred to as drain electrode 4 and the part of grid line 10 just to), form overlapping region 100,
The position relationship that on the premise of the structure of drain electrode 4 is not changed, can rationally arrange thin film transistor (TFT), grid line and pixel electrode comes
Realize；Can also be realized by changing the structure of drain electrode 4, for example：Increase integrally formed branch's knot on drain electrode 4
Structure, it is just right with the part of grid line 10 by the branched structure, form overlapping region 100.
In a specific embodiment, drain electrode 4 is accomplished by just right with the part of grid line 10：
With reference to shown in Fig. 1 and Fig. 2, the gate electrode 2 for arranging the thin film transistor (TFT) is structure as a whole with grid line 10.It is each aobvious
The pixel electrode 1 and thin film transistor (TFT) for showing unit is located at the opposite sides of grid line 10, and drain electrode 4 at least prolongs from the side of grid line 10
The top of grid line 10 is extended, is electrically connected with corresponding pixel electrode 1 so that drain electrode 4 is just right with the part of grid line 10, formed and handed over
Folded region 100.
Wherein, drain electrode 4 includes two following situations from the top that the side of grid line 10 at least extends to grid line 10：Electric leakage
Pole 4 extends to the top (illustrating in Fig. 1) of grid line 10 from the side of grid line 10；Drain electrode 4 extends to phase from the side of grid line 10
To opposite side, above two situation can realize that drain electrode 4 is just right with the part of grid line 10.
Further, the live width that can also arrange the Part II 41 of drain electrode 4 is more than the live width of Part I 40, to increase
Plus the area of overlapping region 100, improve welding success rate.
For the display base plate using double-gate structure, there are two grid lines 10 between two neighboring pixel region.Each picture
Plain region includes the pixel electrode 1 of two settings that keep at a certain distance away on the bearing of trend of grid line 10, positioned at a data wire 60
The corresponding thin film transistor (TFT) of adjacent two row pixel electrode 1 of both sides is electrically connected with the data wire 60, and from different grid lines 10
It is electrically connected with.It is specifically as follows：For two pixel electrodes 1 of a pixel region, the corresponding thin film of one of pixel electrode 1
Transistor AND gate is located at a grid line 10 of the pixel region side and is electrically connected with, the corresponding film crystal of one other pixel electrode 1
Manage and be electrically connected with a grid line 10 of the relative opposite side positioned at the pixel region.Wherein, thin film transistor (TFT) can be arranged on
Between two grid lines 10 between two pixel regions, pixel electrode 1 and corresponding thin film transistor (TFT) is set to be located at grid line 10
Opposite sides, drain electrode 4 at least extends to the top of grid line 10 from the side of grid line 10, electrical with corresponding pixel electrode 1
Connection, realizes that drain electrode 4 is just right with the part of grid line 10, forms overlapping region 100.
It is understood that drain electrode 4 at least extends to the top of grid line 10 from the side of grid line 10, drain electrode 4 is realized
With the part of grid line 10 just to mode be applicable not only to the display base plate of double-gate structure, be also applied for the display base of single grid structure
Plate.
Because double-gate structure has two grid lines 10 between two neighboring pixel region, width is larger, will certainly reduce
Pixel aperture ratio.
In order to solve above-mentioned technical problem, thin film transistor (TFT) can be arranged between two neighboring pixel region
Between two grid lines 10, and in the thin film transistor (TFT) of identical two grid lines 10, two adjacent thin film transistor (TFT)s are first
Orthographic projection part in plane overlaps, and the bearing of trend of first plane and data wire is parallel and perpendicular to the display base plate
The plane at place.That is, on the bearing of trend of grid line 10, two neighboring thin film transistor (TFT) on the bearing of trend of data wire 60 not
Stagger completely setting, so as to reduce the width of double-gate structure, increase pixel aperture ratio.
Above-mentioned specific embodiment is by changing thin film transistor (TFT), grid line and the position relationship of pixel electrode so that electric leakage
Pole and corresponding pixel electrode are located at the both sides of grid line, and drain electrode at least extends to the top of grid line from the side of grid line, and right
It is just right to realize the part of drain electrode and grid line that the pixel electrode answered is electrically connected with, and forms overlapping region.Enter in the overlapping region
Row welding can reach the purpose of short circuit pixel electrode and grid line with short circuit drain electrode and grid line, such that it is able to pass through grid line to picture
Plain electrode transmits voltage signal, bad to the pixel of display device to keep in repair.
In above-mentioned specific embodiment, for the display base plate of double-gate structure, by the way that thin film transistor (TFT) is arranged in place
It is just right to realize the part of drain electrode and grid line between two grid lines 10 between two neighboring pixel region, form overlapping
Region.Further, on the bearing of trend of grid line 10, bearing of trend of the two neighboring thin film transistor (TFT) in data wire 60 is set
On not exclusively stagger and arrange to reduce the width of double-gate structure, increase pixel aperture ratio.
In another particular embodiment of the invention, for the display base plate of double-gate structure, it is accomplished by Lou
Electrode 4 is just right with the part of grid line 10：
With reference to shown in Fig. 3 and Fig. 4, for the ease of description, define and have between two neighboring pixel region the first grid line 11
With the second grid line 12, it is first film transistor 20 to define the thin film transistor (TFT) being connected with the first grid line 10, with the second grid line 12
The thin film transistor (TFT) of connection is the second thin film transistor (TFT) 30.
It should be noted that " first " " second " is only easy for description, not with other limiting meanings.
Wherein, the first gate electrode 21 of first film transistor 20 is structure as a whole with the first grid line 11, and the second thin film is brilliant
Second gate electrode 31 of body pipe 30 is structure as a whole with the second grid line 12.And first gate electrode 21 is located at deviating from for the first grid line 11
The side of the second grid line 12, the second gate electrode 31 is located between the first grid line 11 and the second grid line 12.First grid line 11 and second
The corresponding position of gate electrode 31 has the bending structure 50 with the form fit of the second gate electrode 31, designs in sawtooth pattern occlusion, right
Than Fig. 1 and Fig. 3, relative to a upper specific embodiment, this specific embodiment is more beneficial for reducing the width of double-gate structure, increases
Plus display aperture opening ratio.
Equally can arrange in this specific embodiment：For two pixel electrodes 1 of a pixel region, one of picture
The corresponding thin film transistor (TFT) of plain electrode 1 is electrically connected with a grid line for being located at the pixel region side, one other pixel electrode 1
Corresponding thin film transistor (TFT) is electrically connected with a grid line of the relative opposite side positioned at the pixel region.
Further, in order to shorten the length of drain electrode, reduce loss arranges first film transistor 20 and is located at first
The pixel electrode 1 of the same side of grid line 11 is electrically connected with, the second thin film transistor (TFT) 12 and the picture for being located at the opposite side of the second grid line 12
Plain electrode 1 is electrically connected with.Although first film transistor 20 and corresponding pixel electrode 1 are located at the same side of the first grid line 11,
Because first gate electrode 21 is structure as a whole with the first grid line 11, the part of drain electrode 4 and first gate electrode 21 just to equivalent to
Drain electrode 4 is just right with the part of the first grid line 11.The area of first gate electrode 21 can be increased to increase overlapping region 100
Area, improves welding success rate.And the second thin film transistor (TFT) 30 is located at the both sides of the second grid line 12 with corresponding pixel electrode 1,
Drain electrode 4 at least extends to the top of the second grid line 12 from the side of the second grid line 12, just right with the part of the second grid line 12, is formed
Overlapping region 100.
Above technical scheme realizes that drain electrode 4 is just right with grid line part by two ways, forms overlapping region 100.
It is understood that thin film transistor (TFT) is located at the same side of grid line with corresponding pixel electrode, by drain electrode and gate electrode
Part just to come realize the part of drain electrode and grid line just to mode be also applied for the display base plate of single grid structure, only need to increase
The area of gate electrode, to ensure that overlapping region has sufficiently large area.
In above-mentioned two specific embodiment, the width that can also arrange the Part II 41 of drain electrode 4 is more than first
Points 40 width, and Part II 41 in the orthographic projection in the plane of display base plate institute and grid line 10 in the display base plate
Orthographic projection part in the plane overlap, form overlapping region 100.By the width for increasing Part II 41, can increase
The area of the overlapping region 100 of formation, further improves welding success rate.Part I 40 with regard to drain electrode 4 and second
Points 41 be defined in content above has been described above, and will not be described in detail herein.
It should be noted that thin film transistor (TFT) is referred to grid line electric connection in above content：The grid electricity of thin film transistor (TFT)
Pole is electrically connected with grid line, and thin film transistor (TFT) is referred to electrode data line is electrically connected with：Thin film transistor (TFT) source electrode is electrical with data wire
Connection.Thin film transistor (TFT) and corresponding pixel electrode refer to the thin film transistor (TFT) and pixel electrode of same display unit.
A kind of display device, including display base plate as above are also provided in this utility model embodiment, with by weldering
The mode short circuit pixel electrode for connecing and grid line, improve welding success rate.May then pass through grid line and transmit voltage to pixel electrode
Signal, it is bad to the pixel of display device to keep in repair, for example：The dim spotization of normal white mode display device is keeped in repair, dimension is improved
Accomplish power.
A kind of method for maintaining of display device as above is also provided in this utility model embodiment, including：
In the active layer position cutting drain electrode near thin film transistor (TFT), drain electrode is divided into into Part I insulated from each other
And Part II, near the active layer of thin film transistor (TFT), the Part II and pixel electrode be electrically connected with the Part I,
And the Part II the display base plate orthographic projection in the plane be located in the display base plate with the grid line it is flat
Orthographic projection part on face overlaps, and forms the overlapping region；
Welded in the overlapping region, the Part II and grid line of drain electrode described in short circuit；
Voltage signal is transmitted to pixel electrode by grid line.
Above-mentioned method for maintaining can improve welding success rate, so as to improve the Part II of drain electrode and the short circuit of grid line into
Power, makes pixel electrode pass through the Part II and grid line electric connection.Then voltage is transmitted to pixel electrode by grid line
Signal, it is bad to the pixel of display base plate to keep in repair, improve repairable rate.
The technical solution of the utility model is particularly suited for normal white mode display device (for example：The TFT-LCD of TN types)
Maintenance, cutting drain electrode after, by welding manner short circuit pixel electrode and grid line, the gate signal on grid line is introduced to into picture
Plain electrode, to carry out dim spot maintenance.
The above is only preferred implementation of the present utility model, it is noted that for the common skill of the art
For art personnel, on the premise of without departing from this utility model know-why, some improvement and replacement can also be made, these change
Enter and replace also to should be regarded as protection domain of the present utility model.
Claims (8)
1. a kind of display base plate, including：
A plurality of grid line and a plurality of data lines, the grid line and data wire cross-distribution limit multiple pixel regions；
Multiple display units, each display unit includes：
One is arranged on the pixel electrode in the pixel region；
One is used to transmit the thin film transistor (TFT) of voltage to the pixel electrode, and the gate electrode of the thin film transistor (TFT) is electrical with grid line
Connection, source electrode and electrode data line is electrically connected with, drain electrode is electrically connected with pixel electrode, it is characterised in that
The drain electrode the display base plate orthographic projection in the plane be located in the display base plate with the grid line it is flat
Orthographic projection part on face overlaps, and forms an overlapping region.
2. display base plate according to claim 1, it is characterised in that the thin film transistor (TFT) also includes active layer, described
Drain electrode includes Part I and Part II, the Part I the display base plate orthographic projection in the plane and institute
State active layer the display base plate orthographic projection in the plane at least partly overlap, the Part II is in the display base
Plate orthographic projection in the plane and the active layer the display base plate orthographic projection in the plane do not overlap completely；
Wherein, the width of the Part II is more than the width of the Part I, and the Part II is in the display base
Plate orthographic projection in the plane and the grid line the display base plate orthographic projection part in the plane overlap, form institute
State overlapping region.
3. display base plate according to claim 2, it is characterised in that the thin film transistor (TFT) includes gate electrode, the grid
Electrode is structure as a whole with the grid line；
The pixel electrode and thin film transistor (TFT) of each display unit is located at the opposite sides of grid line, and the drain electrode is from the grid line
Side at least extend to the top of grid line, be electrically connected with corresponding pixel electrode.
4. display base plate according to claim 3, it is characterised in that there are two grid between two neighboring pixel region
Line；
Each pixel region includes the pixel electrode of two settings that keep at a certain distance away on the bearing of trend of grid line, positioned at a number
According to the corresponding thin film transistor (TFT) of adjacent two row pixel electrode and the electrode data line is electrically connected with of line both sides, and from different grid line electricity
Property connection.
5. display base plate according to claim 4, it is characterised in that thin film transistor (TFT) be located at two neighboring pixel region it
Between two grid lines between, and two thin film transistor (TFT)s adjacent in the thin film transistor (TFT) between identical two articles of grid lines are
Orthographic projection part in one plane overlaps, and the bearing of trend of first plane and data wire is parallel and perpendicular to the display base
The plane that plate is located.
6. display base plate according to claim 4, it is characterised in that for two pixel electrodes of a pixel region, its
In the corresponding thin film transistor (TFT) of pixel electrode be electrically connected with a grid line for being located at the pixel region side, another picture
One grid line electric connection of the corresponding thin film transistor (TFT) of plain electrode and the relative opposite side positioned at the pixel region.
7. display base plate according to claim 2, it is characterised in that arrange between two neighboring pixel region and have first
Grid line and the second grid line；
The thin film transistor (TFT) includes first film transistor and the second thin film transistor (TFT), the first of the first film transistor
Gate electrode is structure as a whole with first grid line, and the second gate electrode of second thin film transistor (TFT) is with second grid line
Integrative-structure；
The first gate electrode is located at the side away from second grid line of first grid line, and second gate electrode is located at
Between first grid line and the second grid line；
First grid line position corresponding with the second gate electrode has the bending coordinated with the second gate electrode shape
Structure.
8. a kind of display device, it is characterised in that including the display base plate described in any one of claim 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621245887.1U CN206178305U (en) | 2016-11-18 | 2016-11-18 | Display substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621245887.1U CN206178305U (en) | 2016-11-18 | 2016-11-18 | Display substrate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206178305U true CN206178305U (en) | 2017-05-17 |
Family
ID=58686859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621245887.1U Active CN206178305U (en) | 2016-11-18 | 2016-11-18 | Display substrate and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206178305U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405951A (en) * | 2016-11-18 | 2017-02-15 | 合肥鑫晟光电科技有限公司 | Display substrate and manufacturing method thereof and display device and maintenance method thereof |
| WO2018223784A1 (en) * | 2017-06-09 | 2018-12-13 | 京东方科技集团股份有限公司 | Array substrate, display panel and display apparatus |
| CN109272912A (en) * | 2018-11-30 | 2019-01-25 | 惠科股份有限公司 | Mistake fills detection method and mistake fills detection system |
-
2016
- 2016-11-18 CN CN201621245887.1U patent/CN206178305U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405951A (en) * | 2016-11-18 | 2017-02-15 | 合肥鑫晟光电科技有限公司 | Display substrate and manufacturing method thereof and display device and maintenance method thereof |
| CN106405951B (en) * | 2016-11-18 | 2023-07-14 | 合肥鑫晟光电科技有限公司 | Display substrate, manufacturing method thereof, display device and maintenance method thereof |
| WO2018223784A1 (en) * | 2017-06-09 | 2018-12-13 | 京东方科技集团股份有限公司 | Array substrate, display panel and display apparatus |
| US10741691B2 (en) | 2017-06-09 | 2020-08-11 | Beijing Boe Optoelectronics Technology Co., Ltd. | Array substrate, display panel and display device |
| CN109272912A (en) * | 2018-11-30 | 2019-01-25 | 惠科股份有限公司 | Mistake fills detection method and mistake fills detection system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101540333B (en) | Thin-film transistor substrate and display device having the same | |
| KR101471547B1 (en) | Liquid crystal display | |
| CN101174067B (en) | Liquid crystal display device and method of repairing bad pixels therein | |
| TWI452557B (en) | Display device and driving method thereof | |
| CN206178305U (en) | Display substrate and display device | |
| CN106405951A (en) | Display substrate and manufacturing method thereof and display device and maintenance method thereof | |
| US20060215071A1 (en) | Liquid crystal display and method | |
| US9285643B2 (en) | Liquid crystal display | |
| CN103869564A (en) | Liquid crystal display device | |
| CN104423113A (en) | Liquid crystal display | |
| KR101267496B1 (en) | Liquid crystal display | |
| CN202159214U (en) | Array substrate and liquid crystal display | |
| KR101286546B1 (en) | Liquid crystal display device | |
| CN102591080B (en) | Thin film transistor (TFT) liquid crystal display, substrate and manufacture method of the substrate | |
| US20150185572A1 (en) | Liquid crystal panel | |
| US20090058785A1 (en) | Liquid crystal display and driving method thereof | |
| CN105097895B (en) | Thin film transistor (TFT), array substrate and display device | |
| CN108957804B (en) | Array substrate and maintenance method thereof, display panel and display device | |
| CN109143696A (en) | A kind of dot structure and display device | |
| WO2018120995A1 (en) | Pixel structure | |
| CN107577100A (en) | Array base palte, display panel and display device | |
| CN105892115B (en) | The restorative procedure of array substrate, display panel and array substrate | |
| CN108198863A (en) | A kind of thin film transistor (TFT) and its method for maintaining, array substrate and display device | |
| CN202939397U (en) | Array substrate, liquid crystal panel, public electrodes and public electrode wire | |
| CN102375276B (en) | Display panels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |