CN206148442U - Positive electrode structure of brilliant silicon solar cell secondary printing - Google Patents
Positive electrode structure of brilliant silicon solar cell secondary printing Download PDFInfo
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- CN206148442U CN206148442U CN201621171675.3U CN201621171675U CN206148442U CN 206148442 U CN206148442 U CN 206148442U CN 201621171675 U CN201621171675 U CN 201621171675U CN 206148442 U CN206148442 U CN 206148442U
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- silicon solar
- crystal silicon
- electrode structure
- solar battery
- grid line
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Abstract
The utility model discloses a positive electrode structure of brilliant silicon solar cell secondary printing, this electrode structure include first layer half tone and second floor half tone, and wherein, this first layer half tone includes and sets up first screen cloth in this first screen frame by first screen frame, sets up a plurality of roots main grid lines of parallel arrangement each other on this first screen cloth, sets up mark point on this main grid line, and this main grid line forms first contained angle with the steel wire of first screen cloth, and this first contained angle is 20 to 30, this second floor half tone includes and sets up the second screen cloth in this second screen frame by the second screen frame, sets up a plurality of roots vice grid lines of parallel arrangement each other on this second screen cloth, sets up the 2nd mark point on this pair grid line, just the disconnected bars of EL are prevented to interval and perpendicular the setting between the vice grid line, and the steel wire of this pair grid line and second screen cloth forms the second contained angle, and this second contained angle be 90, the two mark point and puts the position with a mark and correspond. It is long -pending that this scheme can reduce crystalline silicon solar cell front grid line light shielding surface, improves the conversion efficiency of battery.
Description
Technical field
The utility model crystal silicon solar battery technical field, more particularly to a kind of crystal silicon solar battery secondary printing front electricity
Pole structure.
Background technology
Developing rapidly for solar photovoltaic industry, needs constantly to reduce production cost, improves the conversion of crystal silicon solar battery
Efficiency, improves generated energy.
Crystal-silicon solar cell is the semiconductor devices for converting solar energy into electric energy, and the size of device and front gate line hide
Light area directly determines final generated output, in order to obtain higher battery conversion efficiency, the secondary grid line for needing printing thinner,
Shading-area is reduced, electric current is improved, so as to improve crystal silicon solar battery conversion efficiency.
In the production of crystal silicon solar battery, the figure of front electrode needs continuous Optimal improvements according to technological level,
Shading-area is reduced, conversion efficiency is improved, therefore, it is necessary to be improved to the front electrode half tone of crystal silicon solar battery.
Utility model content
The utility model proposes a kind of crystal silicon solar battery secondary printing electrode structure at right side, it is possible to decrease the crystalline silicon sun
Battery front side grid line shading-area, improves the conversion efficiency of battery.
The utility model provides following technical scheme：
A kind of crystal silicon solar battery secondary printing electrode structure at right side, is arranged on the front of crystal silicon solar battery, the electricity
Pole structure includes the first layer halftone and the second layer halftone, wherein, first layer halftone includes the first screen frame, first screen frame
The first screen cloth of interior setting, arranges some main gate lines arranged in parallel on first screen cloth, arrange in the main gate line
Mark points, the steel wire of the main gate line and first screen cloth forms the first angle, first angle be 20 ° extremely
30°；Second layer halftone includes arranging the second screen cloth in the second screen frame, second screen frame, arranges on second screen cloth
Some secondary grid lines arranged in parallel, on the secondary grid line arrange between the 2nd Mark points, and the secondary grid line interval and
The disconnected grid of anti-EL are vertically arranged, the secondary grid line forms the second angle with the steel wire of second screen cloth, and second angle is
90 °, the 2nd Mark points are corresponding with the Mark points position.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the Mark point quantity
For 4,6 or 8, diameter is in 0.2 to 1.2mm.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the width of the main gate line is
0.1 to 1.5mm, the length of the main gate line is 155 to 165mm, and the quantity of the main gate line is 3 to 20.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the 2nd Mark point quantity
For 4,6 or 8, diameter is in 0.2 to 1.2mm.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the disconnected grid of the anti-EL are two
Between root main gate line, quantity is 2 to 15 rows.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the width of the secondary grid line is
10 to 40um, the length of the secondary grid line is 155 to 165mm, and the quantity of the secondary grid line is 90 to 180.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, second screen cloth is without net
Netting cloth.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the crystal silicon solar battery
Be shaped as the quasi- square piece of positive square piece or corner with circular arc, wherein circular arc with diameter greater than 200mm.
Preferably, in above-mentioned crystal silicon solar battery secondary printing electrode structure at right side, the crystal silicon solar battery
Base material is monocrystalline silicon or polysilicon.
Description of the drawings
Fig. 1 is secondary printing the first layer halftone schematic diagram of the utility model embodiment；
Fig. 2 is secondary printing the first layer halftone partial enlarged drawing of the utility model embodiment；
Fig. 3 is secondary printing the second layer halftone schematic diagram of the utility model embodiment；
Fig. 4 is secondary printing the second layer halftone partial enlarged drawing of the utility model embodiment；
In figure：The layer halftones of 100- first, the screen frames of 101- first, the screen cloths of 102- first, 103- main gate lines, 104- first
Mark points, the angles of 201- first, the layer halftones of 300- second, the screen frames of 301- second, the screen cloths of 302- second, 303- pair grid
Line, the Mark points of 304- the 2nd, the anti-EL of 305- break grid, the angles of 401- second
Specific embodiment
Below in conjunction with the drawings and specific embodiments pair the utility model proposes crystal silicon solar battery secondary printing front electricity
Pole structure is described in further detail.According to following explanation and claims, advantages and features of the present utility model will be more clear
Chu.It should be noted that, accompanying drawing in the form of simplifying very much and uses non-accurately ratio, only to conveniently, lucidly
Aid in illustrating the purpose of the utility model embodiment.
Fig. 1 to Fig. 4 is referred to, present embodiment discloses a kind of crystal silicon solar battery secondary printing electrode structure at right side, if
Put in the front of crystal silicon solar battery, the electrode structure includes the first layer halftone 100 and the second layer halftone 300, wherein, it is described
First layer halftone 100 includes arranging the first screen cloth 102, first screen cloth 102 in the first screen frame 101, first screen frame 101
Some main gate lines 103 arranged in parallel of upper setting, arrange a Mark points 104, the master in the main gate line 103
Grid line 103 forms the first angle 201 with the steel wire of first screen cloth 102, and first angle 201 is 20 ° to 30 °；It is described
Second layer halftone 300 includes arranging the second screen cloth 302, second screen cloth 302 in the second screen frame 301, second screen frame 301
Some secondary grid lines 303 arranged in parallel of upper setting, arrange the 2nd Mark points 304 on the secondary grid line 303, and described
It is spaced and is vertically arranged the disconnected grid 305 of anti-EL between secondary grid line 303, the steel wire of the secondary grid line 303 and second screen cloth 302
Form the second angle 401, second angle 401 is 90 °, the 2nd Mark points 304 and the Mark points 104
Put correspondence.
In the above-described embodiments, the quantity of Mark points 104 is 4,6 or 8, and diameter is in 0.2 to 1.2m
M.
In the above-described embodiments, the width of the main gate line 103 be 0.1 to 1.5mm, the length of the main gate line 103
For 155 to 165mm, the quantity of the main gate line 103 is 3 to 20.
In the above-described embodiments, the quantity of the 2nd Mark points 304 is 4,6 or 8, and diameter is in 0.2 to 1.2m
M.
In the above-described embodiments, between two main gate lines, quantity is 2 to 15 rows to the disconnected grid 305 of the anti-EL.
In the above-described embodiments, the width of the secondary grid line 303 is 10 to 40um, and the length of the secondary grid line 303 is
155 to 165mm, the quantity of the secondary grid line 303 is 90 to 180.
In the above-described embodiments, second screen cloth 302 is without net netting cloth.
In the above-described embodiments, the crystal silicon solar battery is shaped as the quasi- square piece of positive square piece or corner with circular arc,
Wherein circular arc with diameter greater than 200mm.
In the above-described embodiments, the base material of the crystal silicon solar battery is monocrystalline silicon or polysilicon.
Above-described embodiment also discloses a kind of system of crystal silicon solar battery secondary printing electrode structure at right side as above
Make method, comprise the steps：
Step 1, the steel wire of first screen cloth 102 is arranged using the angle direction with 20 ° to 30 ° of the main gate line
Cloth；
Step 2, the steel wire of second screen cloth 302 is arranged using the angle direction with 90 ° of the secondary grid line；
Step 3, first layer halftone 100 and second layer halftone 300 are by the Mark points 104 and the
2 Mark points 304 are aligned.
Using such scheme, due to first layer halftone, 100 printings main gate line, to first screen cloth 102
Strike through Capability Requirement is not high, therefore conventional lower-cost screen cloth can be selected to be made, so as to reduce production cost；Institute
The second screen cloth 302 is stated using without net netting cloth, so as to improve the strike through ability of the second screen cloth, the half tone so produced can expire
The printing of foot more fine rule, reduces shading-area, electric current is improved, so as to improve crystal silicon solar battery conversion efficiency.The ground floor
Half tone 100 is aligned by the Mark points 104 with second layer halftone 300 with the 2nd Mark points 304, can be avoided
The shift phenomenon that chromatography is produced, improves the qualification rate that crystal silicon solar battery makes.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the utility model scope
Calmly, the those of ordinary skill in the utility model field does according to the disclosure above content any change, modification, belonging to right will
Seek the protection domain of book.
Claims (9)
1. a kind of crystal silicon solar battery secondary printing electrode structure at right side, is arranged on the front of crystal silicon solar battery, and its feature exists
In, including the first layer halftone and the second layer halftone, wherein,
First layer halftone includes arranging the first screen cloth in the first screen frame, first screen frame, arranges on first screen cloth
Some main gate lines arranged in parallel, arrange a Mark points, the main gate line and first net in the main gate line
The steel wire of cloth forms the first angle, and first angle is 20 ° to 30 °；
Second layer halftone includes arranging the second screen cloth in the second screen frame, second screen frame, arranges on second screen cloth
Some secondary grid lines arranged in parallel, on the secondary grid line arrange between the 2nd Mark points, and the secondary grid line interval and
The disconnected grid of anti-EL are vertically arranged, the secondary grid line forms the second angle with the steel wire of second screen cloth, and second angle is
90 °, the 2nd Mark points are corresponding with the Mark points position.
2. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that described first
Mark points quantity is 4,6 or 8, and diameter is in 0.2 to 1.2mm.
3. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that the main gate line
Width be 0.1 to 1.5mm, the length of the main gate line is 155 to 165mm, and the quantity of the main gate line is 3 to 20.
4. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that described second
Mark points quantity is 4,6 or 8, and diameter is in 0.2 to 1.2mm.
5. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that the anti-EL breaks
Between two main gate lines, quantity is 2 to 15 rows to grid.
6. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that the secondary grid line
Width be 10 to 40um, the length of the secondary grid line is 155 to 165mm, and the quantity of the secondary grid line is 90 to 180.
7. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that second net
Cloth is without net netting cloth.
8. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that the crystal silicon is too
Positive electricity pond is shaped as the quasi- square piece of positive square piece or corner with circular arc, wherein circular arc with diameter greater than 200mm.
9. crystal silicon solar battery secondary printing electrode structure at right side as claimed in claim 1, it is characterised in that the crystal silicon is too
The base material in positive electricity pond is monocrystalline silicon or polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621171675.3U CN206148442U (en) | 2016-10-26 | 2016-10-26 | Positive electrode structure of brilliant silicon solar cell secondary printing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621171675.3U CN206148442U (en) | 2016-10-26 | 2016-10-26 | Positive electrode structure of brilliant silicon solar cell secondary printing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206148442U true CN206148442U (en) | 2017-05-03 |
Family
ID=58623725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621171675.3U Active CN206148442U (en) | 2016-10-26 | 2016-10-26 | Positive electrode structure of brilliant silicon solar cell secondary printing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206148442U (en) |
-
2016
- 2016-10-26 CN CN201621171675.3U patent/CN206148442U/en active Active
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Effective date of registration: 20200720 Address after: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Co-patentee after: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Co-patentee after: State Power Investment Group Qinghai Photovoltaic Industry Innovation Center Co., Ltd Address before: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. |