CN206148439U - Solar cell of passivation layer structure and back of body surface passivation structure - Google Patents
Solar cell of passivation layer structure and back of body surface passivation structure Download PDFInfo
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- CN206148439U CN206148439U CN201621172134.2U CN201621172134U CN206148439U CN 206148439 U CN206148439 U CN 206148439U CN 201621172134 U CN201621172134 U CN 201621172134U CN 206148439 U CN206148439 U CN 206148439U
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- passive film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The utility model discloses a passivation layer structure adopts the stromatolite passive film structure that silica passive film, first silicon nitride passive film, second silicon nitride passive film, silicon oxynitride passive film constitute to has overcome the high shortcoming unstable with the silicon hydrogen bond of interface defect density of silicon nitride passive film, has solved silica passive film metal ion and stopped that the ability is poor, easily adsorbed the aqueous vapor, solely subtract shortcomings such as the minus effect is good. The anti PID's of solar cell effect has been improved. Wherein, silicon oxynitride is the material between silicon nitride and silica, and its refracting index can be between 1.47 (SiO2)~2.3 (SiNx). Optimize the siOxNy film that system membrane technology formed rich nitrogen, trend siNx membrane has kept siO2's membranous part branch advantage in structure and the performance, has improved the physics and electricity performance of film, can make the conversion efficiency of crystalline silica improve 0.2%. And the utility model discloses a bilayer structure's silica passive film, can further improve its metal ion the ability that blocks and light subtract the minus effect.
Description
Technical field
This utility model is related to technical field of solar batteries, more particularly to a kind of passivation layer structure and back surface passivation knot
The solaode of structure.
Background technology
Photovoltaic generation is currently that using one of major way of solar energy, solar energy power generating is because of its cleaning, safety, just
Sharp, efficient the features such as, it has also become countries in the world common concern and the new industry given priority to.Therefore, further investigate and utilize
Solar energy resources, is of great significance to alleviating crisis of resource, tool of improving the ecological environment.
However, current potential induction attenuation effect (PID, Potential Induced Degradation) is but severely impacted
The life-span of solaode and performance.PID effects most early in discovery in 2005, refer to solar module outer shroud out of office
Under border and action of high voltage, due to high temperature, moist and inverter array ground mode, the solar module for causing is serious
Corrosion and the decay of power.
The reason for potential induction attenuation, key factor was in the encapsulating material-glass of solar module, inside glass
Sodium ion is moved toward solaode, the p-n junction of battery is destroyed, so as to cause the decay of power.For this problem, occur
Following two anti-PID technologies：
1st, high index of refraction silicon nitride anti-reflection film, the silicon nitride anti-reflection film compactness of this high index of refraction is high, can play stop
The effect of sodium ion；
2nd, silicon dioxide/silicon nitride stack technology, this composite membrane stops that the effect of sodium ion is slightly better than the former.
But, due to requirement more and more higher of the current power station enterprise to the anti-PID of component, said method has been difficult to meet
The market demand, therefore it is badly in need of the battery of the more excellent anti-PID performances of exploitation.
Utility model content
The purpose of this utility model is the solaode for providing a kind of passivation layer structure and back surface passivation structure, with
Improve the anti-PID effects of solaode.
For achieving the above object, the technical solution adopted in the utility model is as follows：
A kind of passivation layer structure, including：
Silicon dioxide passivating film, is deposited in a crystalline silicon substrate；
First silicon nitride passive film, is deposited on the silicon dioxide passivating film；
Second silicon nitride passive film, is deposited on first silicon nitride passive film；
Silicon oxynitride passivation film, is deposited on second silicon nitride passive film.
In one embodiment of the present utility model, the thickness of the silicon dioxide passivating film is 3-5 nanometers, its refractive index
For 1.4～1.46.
In one embodiment of the present utility model, the thickness of first silicon nitride passive film is 15-20 nanometers, its folding
Rate is penetrated for 2.2～2.3.
In one embodiment of the present utility model, the thickness of second silicon nitride passive film is 50-60 nanometers, its folding
Rate is penetrated for 2.0～2.1.
In one embodiment of the present utility model, the thickness of the silicon oxynitride passivation film is 10-15 nanometers, its refraction
Rate is 1.9～2.0.
A kind of solaode of back surface passivation structure, including crystalline silicon substrate, local aluminum back surface field and above-mentioned blunt
Change Rotating fields；Wherein, the passivation layer structure and the local aluminum back surface field are sequentially deposited at the back surface of the crystalline silicon substrate
On.
This utility model compared with prior art, has the following advantages that and accumulates due to using above technical scheme, being allowed to
Pole effect：
1) this utility model provide passivation layer structure using silicon dioxide passivating film, the first silicon nitride passive film, second
The overlayer passivation membrane structure of silicon nitride passive film, silicon oxynitride passivation film composition, so as to overcome the interface of silicon nitride passive film
Defect concentration is high and the unstable shortcoming of si-h bond, and it is poor to solve silicon dioxide passivating film metal ion blocking capability, easily adsorbs
Aqueous vapor, the shortcomings of the anti-reflection effect of light is bad.Improve the effect of the anti-PID of solaode.
Description of the drawings
The structural representation of the passivation layer structure that Fig. 1 is provided for this utility model embodiment.
Label declaration：
101- crystalline silicon substrates, 102- silicon dioxide passivating films, the silicon nitride passive films of 103- first, the nitrogen of 104- second
SiClx passivating film, 105- silicon oxynitride passivation films
Specific embodiment
Below in conjunction with the drawings and specific embodiments pair the utility model proposes passivation layer structure and back surface passivation structure
Solaode be described in further detail.According to following explanation and claims, advantages and features of the present utility model
To become apparent from.It should be noted that, accompanying drawing in the form of simplifying very much and uses non-accurately ratio, be only used for conveniently,
Lucidly aid in illustrating the purpose of this utility model embodiment.
Fig. 1 is refer to, wherein, the structural representation of the passivation layer structure that Fig. 1 is provided for this utility model embodiment is such as schemed
Shown in 1, the passivation layer structure that this utility model is provided, including：
Silicon dioxide passivating film 102, is deposited in a crystalline silicon substrate 101；
First silicon nitride passive film 103, is deposited on the silicon dioxide passivating film 102；
Second silicon nitride passive film 104, is deposited on first silicon nitride passive film 103；
Silicon oxynitride passivation film 105, is deposited on second silicon nitride passive film 104.
As the presently preferred embodiments, the thickness of the silicon dioxide passivating film 102 be 3-5 nanometers, its refractive index be 1.4～
1.46.The thickness of first silicon nitride passive film 103 is 15-20 nanometers, and its refractive index is 2.2～2.3.Second nitridation
The thickness of silicon passivating film 104 is 50-60 nanometers, and its refractive index is 2.0～2.1.The thickness of the silicon oxynitride passivation film 105 is
10-15 nanometers, its refractive index is 1.9～2.0.
Meanwhile, this utility model additionally provides a kind of solaode of back surface passivation structure, including crystalline silicon substrate,
Local aluminum back surface field and above-mentioned passivation layer structure；Wherein, the passivation layer structure and the local aluminum back surface field are sequentially deposited at
On the back surface of the crystalline silicon substrate.
The passivation layer structure that this utility model is provided adopts silicon dioxide passivating film, the first silicon nitride passive film, the second nitrogen
The overlayer passivation membrane structure of SiClx passivating film, silicon oxynitride passivation film composition, so as to the interface for overcoming silicon nitride passive film lacks
Sunken density is high and the unstable shortcoming of si-h bond, and it is poor to solve silicon dioxide passivating film metal ion blocking capability, easily adsorbs water
Gas, the shortcomings of the anti-reflection effect of light is bad.Improve the effect of the anti-PID of solaode.Wherein, silicon oxynitride is between nitridation
A kind of material between silicon and silicon dioxide, its electric property and optical property fall between, by changing its constituent,
Its refractive index can be made to control in 1.47 (SiO2(the SiN of)～2.3x) between.Optimization filming technology forms the SiO of rich nitrogenxNyThin film,
Tend to SiN in structure and performancexFilm remains SiO2Film certain advantages, improve the physics and electric property of thin film, can make
The transformation efficiency of crystalline silicon improves 0.2%.And this utility model adopts double-deck silicon dioxide passivating film, can be further
Improve the blocking capability of its metal ion and the anti-reflection effect of light.
Obviously, those skilled in the art can carry out various changes to utility model and modification is new without deviating from this practicality
The spirit and scope of type.So, if it is of the present utility model these modification and modification belong to this utility model claim and its
Within the scope of equivalent technologies, then this utility model is also intended to comprising these changes and modification.
Claims (6)
1. a kind of passivation layer structure, it is characterised in that include：
Silicon dioxide passivating film, is deposited in a crystalline silicon substrate；
First silicon nitride passive film, is deposited on the silicon dioxide passivating film；
Second silicon nitride passive film, is deposited on first silicon nitride passive film；
Silicon oxynitride passivation film, is deposited on second silicon nitride passive film.
2. passivation layer structure as claimed in claim 1, it is characterised in that the thickness of the silicon dioxide passivating film is received for 3-5
Rice, its refractive index is 1.4～1.46.
3. passivation layer structure as claimed in claim 1, it is characterised in that the thickness of first silicon nitride passive film is 15-
20 nanometers, its refractive index is 2.2～2.3.
4. passivation layer structure as claimed in claim 1, it is characterised in that the thickness of second silicon nitride passive film is 50-
60 nanometers, its refractive index is 2.0～2.1.
5. passivation layer structure as claimed in claim 1, it is characterised in that the thickness of the silicon oxynitride passivation film is 10-15
Nanometer, its refractive index is 1.9～2.0.
6. a kind of solaode of back surface passivation structure, it is characterised in that including crystalline silicon substrate, local aluminum back surface field and
Passivation layer structure as described in any one of claim 1 to 5；Wherein, the passivation layer structure and the local aluminum back surface field be successively
It is deposited on the back surface of the crystalline silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621172134.2U CN206148439U (en) | 2016-10-26 | 2016-10-26 | Solar cell of passivation layer structure and back of body surface passivation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621172134.2U CN206148439U (en) | 2016-10-26 | 2016-10-26 | Solar cell of passivation layer structure and back of body surface passivation structure |
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| CN206148439U true CN206148439U (en) | 2017-05-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212071A (en) * | 2019-05-22 | 2019-09-06 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN112531035A (en) * | 2020-12-03 | 2021-03-19 | 通威太阳能（成都）有限公司 | Solar cell, preparation method thereof and solar cell back surface multilayer composite passivation film |
| CN113066893A (en) * | 2019-12-13 | 2021-07-02 | 南通苏民新能源科技有限公司 | Double-sided PERC solar cell and preparation method thereof |
| CN114823933A (en) * | 2022-06-30 | 2022-07-29 | 横店集团东磁股份有限公司 | Solar cell structure and manufacturing method thereof |
-
2016
- 2016-10-26 CN CN201621172134.2U patent/CN206148439U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212071A (en) * | 2019-05-22 | 2019-09-06 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN113066893A (en) * | 2019-12-13 | 2021-07-02 | 南通苏民新能源科技有限公司 | Double-sided PERC solar cell and preparation method thereof |
| CN112531035A (en) * | 2020-12-03 | 2021-03-19 | 通威太阳能（成都）有限公司 | Solar cell, preparation method thereof and solar cell back surface multilayer composite passivation film |
| CN112531035B (en) * | 2020-12-03 | 2022-04-29 | 通威太阳能（成都）有限公司 | Solar cell, preparation method thereof and solar cell back surface multilayer composite passivation film |
| CN114823933A (en) * | 2022-06-30 | 2022-07-29 | 横店集团东磁股份有限公司 | Solar cell structure and manufacturing method thereof |
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