CN206132231U - SMD pyroelectric infrared sensor device - Google Patents
SMD pyroelectric infrared sensor device Download PDFInfo
- Publication number
- CN206132231U CN206132231U CN201621164827.7U CN201621164827U CN206132231U CN 206132231 U CN206132231 U CN 206132231U CN 201621164827 U CN201621164827 U CN 201621164827U CN 206132231 U CN206132231 U CN 206132231U
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- pin
- smd
- infrared sensor
- pyroelectric infrared
- tube seat
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Abstract
The utility model relates to a SMD pyroelectric infrared sensor device, including nos pin pottery tube socket, light filter, sensitization wafer, resistance and field effect transistor, wherein, sensitization wafer, resistance and field effect transistor place the ceramic tube socket of no pin in, the inside electrical pillar that leads of sensitization wafer and no pin pottery tube socket be connected, sensitization wafer, resistance and field effect transistor pass through sial silk bonded and on the corresponding pad of electrodeless pin pottery tube socket, carry out electric interconnection with the tube, use the light filter lid on the tube, seal up whole tube socket. Adopt the pyroelectric infrared sensor of this structure, because the use does not have the pin tube, compared traditional TO metal package, improved PCB board upper plate welded efficiency greatly, practiced thrift the pad area of PCB backboard face simultaneously. Simultaneously directly the lid is in the tube top for the light filter, and inside device adopts the directness of lead wire interconnection mode to paste inside the tube, great simplification technological process of production, improvement production efficiency to the sensitization visual angle has increased.
Description
Technical field
The utility model is related to sensor technical field, more particularly to pyroelectric sensor technical field, specifically refers to one
Plant SMD pyroelectric infrared sensor device.
Background technology
Existing pyroelectric infrared sensor, is generally encapsulated, it contains FET, electricity using TO pipe caps and base
Resistance and photosensitive wafer, open a form and load onto optical filter on pipe cap.Its structure is as shown in figure 1, substrate, photosensitive wafer and field-effect
Pipe, is packaged on base, and optical filter is bonded on pipe cap, and pipe cap and base are sealed again by modes such as stored energy weldings.This knot
The product of structure, volume is larger, have pin, visual angle little, when follow-up pcb board is integrated must through hole welding by hand mode, welding
Unnecessary pin is also cut afterwards, thus it is less efficient, while taking the area in the PCB multilayer board back side and intermediate layer, it is not easy to
High-density wiring and encapsulation.And because optical filter is first bonded on pipe cap, then pipe cap is being encapsulated on base, causes production
Complex procedures.
Utility model content
The purpose of this utility model is to overcome the shortcoming of prior art, there is provided one kind be based on without pin ceramic tube seat and
Directly against the SMD pyroelectric infrared sensor device loaded on the optical filter without pin ceramic tube seat upper surface..
In order to realize above-mentioned target, SMD pyroelectric infrared sensor device of the present utility model is specific as follows：
The SMD pyroelectric infrared sensor device, including photosensitive wafer, resistance and FET, its main feature exists
In described SMD pyroelectric infrared sensor also includes one without pin ceramic tube seat and an optical filter, described photosensitive crystalline substance
It is first be connected with the described support column attachment without inside pin ceramics pin, and described photosensitive wafer pass through lead with it is described
It is attached without pin ceramic tube seat, described resistance and FET is fixedly installed on described without in pin ceramic tube seat
It is connected by lead between portion, and described resistance and FET, described optical filter loaded on described nothing directly against drawing
The upper surface of pin ceramic tube seat.
It is preferred that described also includes SMD pin without pin ceramic tube seat, described SMD pin is located at described
Without pin ceramic tube seat lower surface.
It is preferred that described photosensitive wafer, support column, resistance FET be bonded in by Si-Al wire it is described without pin
Photosensitive wafer on the corresponding pad of ceramic tube seat and described is bonded in described support column upper table also by described Si-Al wire
Face.
It is preferred that described optical filter is connected by epoxy resin glue with described fitting without pin ceramic tube seat.
It is preferred that described optical filter is connected by high temp glass glue with described fitting without pin ceramic tube seat.
It is preferred that described support column is conductive pole.
This kind of SMD pyroelectric infrared sensor device is employed, due to it using without pinned ceramic tube seat, is kept away
Exempt from the back side and the area in intermediate layer for taking PCB multilayer board, increased the utilization space of pcb board, be conducive to pcb board to carry out highly dense
Degree wiring and encapsulation.Simultaneously because optical filter is directly fitted in the described upper surface without pin ceramic tube seat, technique is reduced
Step, the angle for increasing reception light source, and because internal components are transferred without the need for substrate, be directly affixed in shell, greatly carry
High production efficiency.
Description of the drawings
Fig. 1 is the structural representation of existing infrared sensor.
Fig. 2 is the side cut-away illustration of SMD pyroelectric infrared sensor of the present utility model.
Reference
1 without pin ceramic tube seat
2 optical filters
3 photosensitive wafers
4 conductive poles
5 resistance
6 FETs
7 SMD pins
Specific embodiment
In order to clearer description the technical solution of the utility model, carry out with reference to instantiation further
Description.
SMD pyroelectric infrared sensor of the present utility model, including photosensitive wafer 3, resistance 5 and FET 6, its
It is mainly characterized by, described SMD pyroelectric infrared sensor also includes one without the optical filter 2 of pin ceramic tube seat 1 and,
Described photosensitive wafer 3 is connected with described without the support column attachment inside pin ceramic tube seat 1, and described support column is conduction
Post 4, and described photosensitive wafer 3 is connected with described by lead without pin ceramic tube seat 1, described resistance 5 and field effect
Should pipe 6 be fixedly installed on the described inside without pin ceramic tube seat 1, and by drawing between described resistance 5 and FET 6
Line is connected, and described optical filter 2 passes through epoxy resin glue or high temp glass glue directly against loaded on described ceramic without pin
The upper surface of base 1.Described includes a SMD pin 7 without pin ceramic tube seat 1, and the SMD pin 7 is located at described
Without the lower surface of pin ceramic tube seat 1.
In a kind of preferably embodiment, described photosensitive wafer 3, support column, resistance 5 and FET 6 pass through silicon
Aluminium wire is bonded in described without on the corresponding pad of pin ceramic tube seat 1, and described photosensitive wafer 3 is also by described sial
Silk is bonded in described support column upper surface.
Fig. 2 is referred to, the SMD pyroelectric infrared sensor, bag expands without pin ceramic tube seat 1 that (SMD pin 7 is
One part), optical filter 2, photosensitive wafer 3, conductive pole 3, resistance 5, FET 6, conductive pole 4, resistance 5 and FET 6
Fixation is mounted on without pin ceramic tube seat 1, and photosensitive wafer 3 is mounted on conductive pole 4.Photosensitive wafer 3, resistance 5 and FET 6
It is bonded in without on the corresponding pad of pin ceramic tube seat 1 by Si-Al wire.
Concrete production technology of the present utility model is as follows：Device prepares → mounts conductive pole, FET, resistance, photosensitive
Wafer → wire bonding → half product test → sealing cap → reliability testing → mark → cutting → sorting mounted box
Comprise the following steps that：
The first step, prepares raw material, carries out necessary cleaning；
Second step, by dispensing chip mounter, fills successively patch conductive pole 4, FET 6, resistance 5, photosensitive wafer 3；
3rd step, carries out baking-curing silver paste in 1 hour by 150 DEG C；
4th step, is interconnected by aluminium wire bonding equipment to corresponding solder joint；
5th step, is sampled by test fixture to overall signal, and is recorded substandard products and marked；
6th step, by point gum machine without coating epoxy glue in edge on pin ceramic tube seat 1；
7th step, in nitrogen atmosphere, with chip mounter the dress patch of optical filter 2 is completed, and is toasted；
8th step, reliability testing, and mark substandard products；
9th step, cutting, sorting and mounted box.
This kind of SMD pyroelectric infrared sensor device is employed, due to it using without pinned ceramic tube seat 1, is kept away
Exempt from the back side and the area in intermediate layer for taking PCB multilayer board, increase the utilization space of pcb board, be conducive to pcb board to carry out high density
Wiring and encapsulation.Simultaneously because optical filter 2 is directly fitted in the described upper surface without pin ceramic tube seat, technique step is reduced
Suddenly the angle for receiving light source, is increased, and because internal components are transferred without the need for substrate, is directly affixed in shell, greatly improved
Production efficiency.
In this description, the utility model is described with reference to its specific embodiment.But it is clear that still can be with
Various modification can be adapted and conversion is without departing from spirit and scope of the present utility model.Therefore, specification and drawings are considered as
It is illustrative and not restrictive.
Claims (6)
1. a kind of SMD pyroelectric infrared sensor device, including photosensitive wafer, resistance and FET, it is characterised in that
Described SMD pyroelectric infrared sensor also includes one without pin ceramic tube seat and an optical filter, described photosensitive wafer with
Described is drawn by lead without the support column attachment connection inside pin ceramics pin, and described photosensitive wafer with described nothing
Pin ceramic tube seat is connected, and described resistance and FET is fixedly installed on the described inside without pin ceramic tube seat, and
Be connected by lead between described resistance and FET, described optical filter directly against loaded on described without pin ceramics
The upper surface of base.
2. SMD pyroelectric infrared sensor device according to claim 1, it is characterised in that described without pin pottery
Porcelain tube seat also includes SMD pin, and described SMD pin is located at described without pin ceramic tube seat lower surface.
3. SMD pyroelectric infrared sensor device according to claim 1, it is characterised in that described photosensitive crystalline substance
Unit, support column, resistance FET are bonded in described without on the corresponding pad of pin ceramic tube seat and described by Si-Al wire
Photosensitive wafer be bonded in described support column upper surface also by described Si-Al wire.
4. SMD pyroelectric infrared sensor device according to claim 1, it is characterised in that described optical filter leads to
Cross epoxy resin glue to be connected with described fitting without pin ceramic tube seat.
5. SMD pyroelectric infrared sensor device according to claim 1, it is characterised in that described optical filter leads to
Cross high temperature glass cement to be connected without pin ceramic tube seat with described.
6. SMD pyroelectric infrared sensor device according to claim 1, it is characterised in that described support column is
Conductive pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621164827.7U CN206132231U (en) | 2016-10-25 | 2016-10-25 | SMD pyroelectric infrared sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621164827.7U CN206132231U (en) | 2016-10-25 | 2016-10-25 | SMD pyroelectric infrared sensor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206132231U true CN206132231U (en) | 2017-04-26 |
Family
ID=58575431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621164827.7U Active CN206132231U (en) | 2016-10-25 | 2016-10-25 | SMD pyroelectric infrared sensor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206132231U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110082868A (en) * | 2018-01-25 | 2019-08-02 | 苏州旭创科技有限公司 | Optical transceiver module and optical module with it |
-
2016
- 2016-10-25 CN CN201621164827.7U patent/CN206132231U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110082868A (en) * | 2018-01-25 | 2019-08-02 | 苏州旭创科技有限公司 | Optical transceiver module and optical module with it |
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