CN205248277U - Image sensor's packaging structure - Google Patents

Image sensor's packaging structure Download PDF

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Publication number
CN205248277U
CN205248277U CN201521070341.2U CN201521070341U CN205248277U CN 205248277 U CN205248277 U CN 205248277U CN 201521070341 U CN201521070341 U CN 201521070341U CN 205248277 U CN205248277 U CN 205248277U
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CN
China
Prior art keywords
pad
support portion
base portion
image sensor
sensor chip
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Withdrawn - After Issue
Application number
CN201521070341.2U
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Chinese (zh)
Inventor
王国建
李保云
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JACAL ELECTRONIC (WUXI) CO Ltd
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JACAL ELECTRONIC (WUXI) CO Ltd
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Priority to CN201521070341.2U priority Critical patent/CN205248277U/en
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Publication of CN205248277U publication Critical patent/CN205248277U/en
Withdrawn - After Issue legal-status Critical Current
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Abstract

The utility model discloses an image sensor's packaging structure, including the base plate, this base plate includes the basal portion, and the upper surface edge of basal portion all upwards extends and forms closed supporting part, and the basal portion upper surface in supporting part and the cavity that the basal portion forms is fixed with the image sensor chip by the adhesive linkage through the mode that bonds, film glass optical window bottom face edge is through the photoetching, evaporation or the mode of sputtering there are the sealing -in ring by outer extremely interior preparation in proper order, outer pad, interconnection line and interior pad, one side that supporting part up end border is close to the image sensor chip is equipped with and outer pad matched with supporting part pad, be equipped with on the supporting part up end in this supporting part pad outside and encircle with the sealing -in of sealing -in ring matched with supporting part, all around the edge is equidistant is equipped with a plurality of breachs and the semicircle through -hole that link up of lower extreme and this basal portion lower extreme facial features outwards for the basal portion, this basal portion bottom face is equipped with the outer pad of basal portion.

Description

A kind of encapsulating structure of imageing sensor
Technical field
The utility model relates to microelectronic packaging technology field, specifically, relates to a kind of encapsulating structure of imageing sensor.
Background technology
Existing imageing sensor is arranged on chip in base portion (as CLCC base of ceramic, the organic base portion of PLCC) cavity conventionally, chip and base portion is interconnected with spun gold or aluminium wire etc., then uses glass plate optical window adhering and sealing; Make besides the wafer level packaging of vertical conducting with silicon through hole technology (TSV), the former exists highly greatly, size is large, and the latter invests greatly, the high deficiency of packaging cost, can not meet image sensor package demand ultra-thin, microminiature dimensional requirement.
For the problem in correlation technique, effective solution is not yet proposed at present.
Utility model content
The purpose of this utility model is to provide a kind of encapsulating structure of imageing sensor, to overcome currently available technology above shortcomings.
For realizing above-mentioned technical purpose, the technical solution of the utility model is achieved in that
A kind of encapsulating structure of imageing sensor, comprise substrate, this substrate comprises base portion, the top surface edge place of described base portion all upwards extends to form enclosed support portion, the described base portion upper surface that described support portion and described base portion form in cavity is fixed with image sensor chip by adhesive linkage by bonding mode, and the exit at edge, described image sensor chip upper surface is solder bump, between described support portion and described base portion, form the structure that top has opening, on this opening, have one can seal described opening and with the equal-sized film glass optical window of described support portion cross section, described film glass optical window bottom face edge is by photoetching, the mode of evaporation or sputter is manufactured with sealing ring from outside to inside successively, outer pad, interconnection line and interior pad, wherein, described interconnection line two ends are connected with described outer pad with described interior pad respectively, described salient point matches with described interior pad, edge, upper surface, described support portion is provided with the support portion pad matching with described outer pad near a side of described image sensor chip, the upper surface, described support portion in this pad outside, support portion is provided with the support portion sealing ring matching with described sealing ring, described base portion edge is equally spaced is provided with some breach outwardly and half-round cross hole that lower end and this base portion lower surface connect, this base portion bottom face is provided with pad outside the base portion for block openings under described half-round cross hole and extend in described base portion bottom face, the described support portion at pad lower surface place, described support portion is provided with the buried via hole being connected to downward-extension and with pad outside the described base portion of described base portion bottom face and described half-round cross hole.
Further, between edge, described image sensor chip surrounding and the medial surface of described support portion, form the cavity around described image sensor chip.
Further, the underlying metal structural material of its exit salient point of described image sensor chip is copper-nickel-Jin or copper-nickel-Xi, and convex point material is tin or SAC alloy; Or described image sensor chip exit salient point is on copper post, to be with tin cap.
Further, described film glass optical window is made up of the optical glass that meets cmos image sensor.
Further, on described sealing ring and described support portion sealing ring, have solder layer by electroplating or changing plating or evaporation or sputter, wherein, the scolder of solder layer is tin or SAC.
Further, the surface texture material of described support portion pad, described support portion sealing ring, the outer pad of described base portion, described half-round cross hole is nickel-Jin or nickel-Xi.
The beneficial effects of the utility model: replace glass cover-plate with film glass optical window in packaging technology, reduced optical window thickness; Complete electric interconnection, sealing-in by image sensor chip epirelief point melt solder, pad, sealing ring melt solder, save lead key closing process, reduce bonding height, realize cmos image sensor Ultrathin packaging, and change interconnection and sealing-in into an operation and complete, greatly shorten technological process, reduced packaging cost.
Brief description of the drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is according to the front view of the encapsulating structure of the imageing sensor described in the utility model embodiment;
Fig. 2 is according to the top view of the encapsulating structure of the imageing sensor described in the utility model embodiment;
Fig. 3 is according to the upward view of the film glass optical window described in the utility model embodiment;
Fig. 4 is according to the top view of the substrate described in the utility model embodiment;
Fig. 5 is according to the upward view of the substrate described in the utility model embodiment.
In figure:
1, substrate; 11, base portion; 111, half-round cross hole; 112, the outer pad of base portion; 12, support portion; 121, support portion pad; 122, support portion sealing ring; 123, buried via hole; 2, image sensor chip; 21, salient point; 3, adhesive linkage; 4, film glass optical window; 41, sealing ring; 42, outer pad; 43, interconnection line; 44, interior pad; 5, cavity; 6, solder layer.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiment. Based on the embodiment in the utility model, all other embodiment that those of ordinary skill in the art obtain, belong to the scope that the utility model is protected.
As shown in Figures 1 to 5, according to the encapsulating structure of a kind of imageing sensor described in embodiment of the present utility model, comprise substrate 1, this substrate 1 comprises base portion 11, the top surface edge place of described base portion 11 all upwards extends to form enclosed support portion 12, described support portion 12 is fixed with image sensor chip 2 by adhesive linkage 3 by bonding mode with described base portion 11 upper surfaces that described base portion 11 is formed in cavity, and the exit at described image sensor chip 2 edges, upper surface is solder bump 21; between described support portion 12 and described base portion 11, form the structure that top has opening, on this opening, have one can seal described opening and with the equal-sized film glass optical window 4 of described support portion 12 cross section, described film glass optical window 4 bottom face edges are by photoetching, the mode of evaporation or sputter is manufactured with sealing ring 41 from outside to inside successively, outer pad 42, interconnection line 43 and interior pad 44, wherein, described interconnection line 43 two ends are connected with described outer pad 42 with described interior pad 44 respectively, described salient point 21 matches with described interior pad 44,12 edges, upper surface, described support portion are provided with the support portion pad 121 matching with described outer pad 42 near a side of described image sensor chip 2,12 upper surfaces, described support portion in these support portion pad 121 outsides are provided with the support portion sealing ring 122 matching with described sealing ring 41, described base portion 11 edges are equally spaced is provided with some breach outwardly and half-round cross hole 111 that lower end and this base portion 11 lower surfaces connect, these base portion 11 bottom faces are provided with pad 112 outside the base portion for block 111 times openings of described half-round cross hole and extend in described base portion 11 bottom faces, the described support portion 12 at described support portion pad 121 lower surface places is provided with the buried via hole 123 being connected to downward-extension and with pad 112 outside the described base portion of described base portion 11 bottom faces and described half-round cross hole 111.
Further, between described image sensor chip 2 edges, surroundings and the medial surface of described support portion 12, form the cavity 5 around described image sensor chip 2.
Further, the underlying metal structural material of described image sensor chip 2 its exit salient points 21 is copper-nickel-Jin or copper-nickel-Xi, and salient point 21 materials are tin or SAC alloy; Or described image sensor chip 2 exit salient points 21 are with tin cap on copper post.
Further, described film glass optical window 4 is made up of the optical glass that meets cmos image sensor.
Further, on described sealing ring 41 and described support portion sealing ring 122, have solder layer 6 by electroplating or changing plating or evaporation or sputter, wherein, the scolder of solder layer 6 is tin or SAC.
Further, the surface texture material of described support portion pad 121, described support portion sealing ring 122, the outer pad 112 of described base portion, described half-round cross hole 111 is nickel-Jin or nickel-Xi.
Understand technique scheme of the present utility model for convenient, below by technique scheme of the present utility model being elaborated in concrete occupation mode.
In the time of concrete use,
The packaging technology of imageing sensor comprises the steps:
First, material is made, choose multilayer organic substrate, and adopt multilayer organic substrate technique to make substrate 1, by blanking, internal layer is made, pressing, boring, chemical plating/heavy copper, solder mask and text printout, electronickelling-Jin or change nickel plating-palladium-Jin or plating/change nickel plating, and then at support portion sealing ring 122, on support portion pad 121 metal layers, electroplate or change plating or evaporation or sputter or the hot surfacing bed of material 6, wherein, scolder is tin, SAC, produce support portion pad 121, support portion sealing ring 122, buried via hole 123, the outer pad 112 of base portion, half-round cross hole 111, the substrate 1 of the organic material of cavity, finally cutting sub-elects qualified substrate 1,
Choose film glass, and on film glass, adopt photoetching, evaporation or sputter make multi-layer metal structure sealing ring 41, outer pad 42, interconnection line 43 and interior pad 44, and sub-elect qualified film glass optical window 4 by emery wheel or laser cutting;
On the exit pad of image sensor chip 2, make the salient point 21 with metal level, scolder;
Secondly, by image sensor chip 2 by conductive adhesive in the middle part of substrate upper cavity, and ensure that image sensor chip 2 and substrate 1 are positioned at same plane;
From inferior, clean, adopt argon, hydrogen ion to clean the image sensor chip after bonding 2;
Again, encapsulation, there is the face of metal wiring layer to be buckled on substrate 1 and image sensor chip 2 film glass optical window 4, sealing ring 41 is corresponding with support portion sealing ring 122, outer pad 42 is corresponding with support portion pad 121, interior pad 44 is corresponding with salient point 21, process high temperature under inertia or reducing atmosphere, pressurization leveling, and through 260 DEG C ± 10 DEG C insulations 1 minute ± 0.5 minute, the size of pressure force is multiplied by 5g/mm~50g/mm according to sealing perimeter value and calculates, melt solder is made to film glass optical window 4, image sensor chip 2, support portion 12 on substrate 1 completes interconnection welding and sealing, interconnection, be sealed into synchronously and complete,
Finally, detect, the packaging after pressing is carried out to visual examination, performance test and mark.
The outer pad 112 of base portion and CLCC(ceramics water type carrier package on substrate) identical.
In sum, by means of technique scheme of the present utility model, in packaging technology, replace glass cover-plate with film glass optical window 4, reduced optical window thickness; Complete electric interconnection, sealing-in by salient point 21 melt solder, pad, sealing ring melt solder on image sensor chip 2, save lead key closing process, reduce bonding height, realize cmos image sensor Ultrathin packaging, and change interconnection and sealing-in into an operation and complete, greatly shorten technological process, reduced packaging cost.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.

Claims (6)

1. the encapsulating structure of an imageing sensor, comprise substrate (1), it is characterized in that, this substrate (1) comprises base portion (11), the top surface edge place of described base portion (11) all upwards extends to form enclosed support portion (12), described support portion (12) is fixed with image sensor chip (2) by adhesive linkage (3) by bonding mode with described base portion (11) upper surface that described base portion (11) is formed in cavity, and the exit at described image sensor chip (2) edge, upper surface is solder bump (21); between described support portion (12) and described base portion (11), form the structure that top has opening, on this opening, have one can seal described opening and with described support portion (12) the equal-sized film glass optical window of cross section (4), described film glass optical window (4) bottom face edge is by photoetching, the mode of evaporation or sputter is manufactured with sealing ring (41) from outside to inside successively, outer pad (42), interconnection line (43) and interior pad (44), wherein, described interconnection line (43) two ends are connected with described outer pad (42) with described interior pad (44) respectively, described salient point (21) matches with described interior pad (44), edge, upper surface, described support portion (12) is provided with the support portion pad (121) matching with described outer pad (42) near a side of described image sensor chip (2), the upper surface, described support portion (12) in this support portion pad (121) outside is provided with the support portion sealing ring (122) matching with described sealing ring (41), described base portion (11) edge is equally spaced is provided with some breach outwardly and half-round cross hole (111) that lower end and this base portion (11) lower surface connect, this base portion (11) bottom face is provided with pad (112) outside the base portion for block openings under described half-round cross hole (111) and extend in described base portion (11) bottom face, the described support portion (12) at described support portion pad (121) lower surface place is provided with the buried via hole (123) being connected to downward-extension and with pad (112) outside the described base portion of described base portion (11) bottom face and described half-round cross hole (111).
2. the encapsulating structure of imageing sensor according to claim 1, is characterized in that, between edge, described image sensor chip (2) surrounding and the medial surface of described support portion (12), forms the cavity (5) around described image sensor chip (2).
3. the encapsulating structure of imageing sensor according to claim 1, it is characterized in that, the underlying metal structural material of its exit salient point (21) of described image sensor chip (2) is copper-nickel-Jin or copper-nickel-Xi, and salient point (21) material is tin or SAC alloy; Or described image sensor chip (2) exit salient point (21) is with tin cap on copper post.
4. the encapsulating structure of imageing sensor according to claim 1, is characterized in that, described film glass optical window (4) is made up of the optical glass that meets cmos image sensor.
5. the encapsulating structure of imageing sensor according to claim 1, it is characterized in that, described sealing ring (41) and described support portion sealing ring (122) are upper has solder layer (6) by electroplating or changing plating or evaporation or sputter, and wherein, the scolder of solder layer (6) is tin or SAC.
6. the encapsulating structure of imageing sensor according to claim 1, it is characterized in that, the surface texture material of described support portion pad (121), described support portion sealing ring (122), the outer pad (112) of described base portion, described half-round cross hole (111) is nickel-Jin or nickel-Xi.
CN201521070341.2U 2015-12-18 2015-12-18 Image sensor's packaging structure Withdrawn - After Issue CN205248277U (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105575987A (en) * 2015-12-18 2016-05-11 积高电子(无锡)有限公司 Packaging structure of image sensor and packaging technology

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105575987A (en) * 2015-12-18 2016-05-11 积高电子(无锡)有限公司 Packaging structure of image sensor and packaging technology

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GR01 Patent grant
AV01 Patent right actively abandoned
AV01 Patent right actively abandoned

Granted publication date: 20160518

Effective date of abandoning: 20171208