CN206041943U - Be applied to cell -phone antenna end's power amplifier module - Google Patents
Be applied to cell -phone antenna end's power amplifier module Download PDFInfo
- Publication number
- CN206041943U CN206041943U CN201620943571.3U CN201620943571U CN206041943U CN 206041943 U CN206041943 U CN 206041943U CN 201620943571 U CN201620943571 U CN 201620943571U CN 206041943 U CN206041943 U CN 206041943U
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
Abstract
The utility model discloses a be applied to cell -phone antenna end's power amplifier module, including main signal circuit and main signal bias circuit, assistance signal circuit and assistance signal bias circuit, power feedback circuit and output conversion matching circuit, the utility model discloses a power amplifier module utilizes power feedback circuit to adopt dynamic mode to gather the output who assists signal circuit and feed back sample voltage in real time, the sample voltage who utilizes the feedback realizes the adjustment to bias circuit, it is very narrow to have solved frequency that power amplifier module was suitable for and the power range among the prior art, the compensation effect receives technological parameter and exerts a tremendous influence, unstable performance, be difficult to guarantee the repeatability of product and the problem of uniformity simultaneously in mass production, optimize the efficiency and the linearity in suitable power range or in the suitable frequency range with the realization.
Description
Technical field
The utility model is related to the power amplifier field of mobile communication front end, more particularly to a kind of work(for being applied to antenna for mobile phone end
Amplification module.
Background technology
The traditional biasing circuit of power amplifier module can be by CMOS, BIHEMT, BIFET, or even the technology of HBT only is realized,
Common design with simple current mirror as skeleton, using loop or the various structures of open circuit, according to the technique of producer to only
Vertical design is optimized, and at present common biasing circuit is opened a way returning shown in biasing circuit and Fig. 2 as shown in Figure 1
Road biasing circuit.
In order to improve the linearity of certain power or certain arrowband, designer also can deliberately introduce RF signals and power tube is carried out
Modulation, common incorporation way are that simply directly introducing portion RF signal enters the transistor of biasing circuit, the shortcoming brought
It is that, as specific aim is too strong, the frequency and power bracket for causing power amplifier module be suitable for is very narrow, compensation effect is subject to technological parameter
Affect very big, unstable properties, while being difficult to ensure the repeatability and uniformity of product in production in enormous quantities.
Utility model content
Utility model purpose：The utility model is in order to solve the deficiencies in the prior art, there is provided one kind is applied to mobile phone day
The power amplifier module of line end, it is possible to increase the gain of power bracket internal power pipe, while also carrying out to output amplitude and phase place excellent
Change, so as to realize the lifting of specified compression point output power and the linearity to reach the lifting to efficiency.
Technical scheme：To solve above-mentioned technical problem, the power amplifier mould for being applied to antenna for mobile phone end that the utility model is provided
Block, including：Main signal circuit and main signal biasing circuit, auxiliary signal circuit and auxiliary signal biasing circuit, Feedback of Power circuit with
And output conversion match circuit, main signal biasing circuit provides bias voltage for main signal circuit, supplemented by auxiliary signal biasing circuit
Signal circuit offer bias voltage, the power output of the auxiliary signal circuit of Feedback of Power circuit Real-time Collection, and according to collection signal
Main signal biasing circuit and auxiliary signal biasing circuit are modulated, output changes match circuit by main signal circuit and auxiliary signal
The power of circuit output is changed and is exported corresponding matched signal.
Further, the Feedback of Power circuit includes being arranged on auxiliary signal circuit output end and output conversion matching
Peak detection circuit U2 and FET Q5, transistor Q3 and its auxiliary circuit between circuit；The FET Q5's
Grid connection peakvalue's checking circuit U 2, by the sampled voltage of peak detection circuit U2 outputs come controlling switch state；
The drain electrode of effect pipe Q5 connects the main signal biasing circuit and auxiliary signal biasing circuit, for providing modulation voltage；Field-effect
The source electrode of pipe Q5 connects the emitter stage of transistor Q3；The colelctor electrode of transistor Q3 connects power supply Vdd2 by resistance R5.
Wherein, the output end of the main signal circuit is provided with main power tube Q1, and main power tube Q1 adopts transistor, main letter
The radiofrequency signal of number circuit by electric capacity C2 into main power tube Q1 base stage, the grounded emitter of main power tube Q1；Auxiliary signal electricity
The output end on road is provided with auxiliary power pipe Q2, and auxiliary power pipe Q2 adopts transistor, and the radiofrequency signal of auxiliary signal circuit is by electricity
Hold C3 into the base stage of auxiliary power pipe Q2, the grounded emitter of auxiliary power pipe Q2.
Wherein, the main signal biasing circuit and auxiliary signal biasing circuit include：Transistor Q4 and its auxiliary circuit, it is described
The base stage of transistor Q4 connects one end of resistance R2, and on the one hand the other end of resistance R2 passes through diode series circuit and electric capacity C1
The parallel circuit ground connection for being formed, on the one hand connects power supply Vdd1 by resistance R3；Two poles are provided with diode series circuit
The anode connection resistance R2 of pipe D1 and diode D2, diode D1, negative electrode connect the anode of diode D2, the negative electrode of diode D2
Ground connection；The colelctor electrode of transistor Q4 connects power supply Vdd2 by resistance R4；The emitter stage of transistor Q4 passes through inductance L3 and resistance
The series circuit that R6 is formed connects the base stage of main power tube Q1, provides bias voltage for main power tube Q1；The transmitting of transistor Q4
Pole passes through the base stage of the series circuit connection auxiliary power pipe Q2 that inductance L1 and resistance R1 is formed, and provides partially for auxiliary power pipe Q2
Put voltage；The base stage of transistor Q4 is also connected with the base stage of transistor Q3, and emitter stage is also connected with the drain electrode of FET Q5.
Wherein, the output conversion match circuit includes impedance transducer T1 and output matching circuit U1, impedance transducer
The first input end of the Differential Input of T1 connects the colelctor electrode of main power tube Q1, and the second input connects the collection of auxiliary power pipe Q2
Electrode, difference ground terminal connect power supply Vdd3 by inductance L6, and power supply Vdd3 is grounded by electric capacity C4；The output of impedance transducer T1
End connection output matching circuit U1, other end ground connection.
Wherein, the output matching circuit U1 includes inductance L11, inductance L12, electric capacity C11, electric capacity C12, electric capacity C13；Electricity
One end of sense L11 arranges port P11, and for connecting the output of impedance transducer T1, the other end of inductance L11 is on the one hand by electricity
Hold C11 ground connection, on the other hand connect one end of inductance L12, on the one hand the other end of inductance L12 is grounded by electric capacity C12, another
One end of aspect connection electric capacity C13, the other end of electric capacity C13 arrange port P12, for connecting terminal load.
Wherein, the peak detection circuit U2 includes directional coupler Coupler21, directional coupler Coupler21's
One end arranges the colelctor electrode output of port P21 connection auxiliary power pipe Q2, and the other end arranges port P22 connection impedance transducer T1
Differential Input the second input；One coupling port of directional coupler Coupler21 is connect by its load resistance R21
Ground, another coupling port connect one end of electric capacity C21, and the other end of electric capacity C21 arranges the grid that P23 ports connect FET Q5
On the one hand pole, the P23 ports is grounded by diode D21, on the other hand connects dc source DC21 by resistance R22.
Beneficial effect：Power amplifier module of the present utility model is using Feedback of Power circuit using dynamic mode to auxiliary signal electricity
The power output on road is sampled and is carried out Real-time Feedback；Under zero saturated linear power, power tube in main and auxiliary signal circuit
Base current is defined by initial bias point；When power reaches and exceeds the scope specified, Feedback of Power circuit is according to sampling letter
Number feedback real-time regulation is carried out according to power output to the biasing circuit of power tube base stage, improve power bracket internal power pipe
Gain, while be also optimized to output amplitude and phase place, so as to realize carrying for specified compression point output power and the linearity
Rise to reach the lifting to efficiency；Output conversion match circuit is designed using wideband, can improve giving birth to for the optimisation technique
Producing property.
Description of the drawings
Fig. 1 is open circuit biasing circuit of the prior art；
Fig. 2 is loop offset circuit of the prior art；
Fig. 3 is the circuit module schematic diagram of the power amplifier module that antenna for mobile phone end is applied in the utility model；
Fig. 4 is a kind of physical circuit figure of power amplifier module in the utility model；
Fig. 5 is a kind of physical circuit figure of output matching circuit in the utility model；
Fig. 6 is a kind of physical circuit figure of peak detection circuit in the utility model；
Fig. 7 is the laying out pattern schematic diagram of power amplifier module in the utility model；
Fig. 8 is the power amplifier gain and the emulation of output power curve of power amplifier module and traditional power amplifier module in the utility model
Comparative result figure.
Specific embodiment
The utility model is described in further detail with reference to embodiment, this enforcement row are to the utility model not structure
Into restriction.
The power amplifier module that antenna for mobile phone end is applied in Fig. 3 includes main signal circuit and main signal biasing circuit, auxiliary signal
Circuit and auxiliary signal biasing circuit, Feedback of Power circuit and output conversion match circuit, main signal biasing circuit is main signal
Circuit provides bias voltage, and signal circuit provides bias voltage, Feedback of Power circuit Real-time Collection supplemented by auxiliary signal biasing circuit
The power output of auxiliary signal circuit, and main signal biasing circuit and auxiliary signal biasing circuit are modulated according to collection signal,
The power that main signal circuit and auxiliary signal circuit are exported is changed and is exported corresponding matching letter by output conversion match circuit
Number.
In circuit as shown in Figure 4, the output end of main signal circuit is provided with main power tube Q1, the output of auxiliary signal circuit
End is provided with auxiliary power pipe Q2, main power tube Q1 and auxiliary power pipe Q2 and adopts NPN transistor；The radio frequency of main signal circuit
Signal is entered the base stage of main power tube Q1, the grounded emitter of main power tube Q1 by electric capacity C2；The radiofrequency signal of auxiliary signal circuit
The base stage of auxiliary power pipe Q2, the grounded emitter of main power tube Q1 are entered by electric capacity C3.
Biasing circuit includes NPN transistor Q4 and its auxiliary circuit, and the base stage of transistor Q4 connects one end of resistance R2,
The parallel circuit ground connection that on the one hand other end of resistance R2 is formed by diode series circuit and electric capacity C1, on the one hand passes through
Resistance R3 connects power supply Vdd1；Diode D1 and diode D2 is provided with diode series circuit, the anode of diode D1 connects
Connecting resistance R2, negative electrode connect the anode of diode D2, the minus earth of diode D2；The colelctor electrode of transistor Q4 passes through resistance R4
Connection power supply Vdd2；On the one hand the emitter stage of transistor Q4 passes through the series circuit connection auxiliary work(that inductance L1 and resistance R1 is formed
The base stage of rate pipe Q2, provides bias voltage for auxiliary power pipe Q2, the series connection on the other hand being formed by inductance L3 and resistance R6
Circuit connects the base stage of main power tube Q1, provides bias voltage for main power tube Q1.
Output conversion match circuit includes impedance transducer T1 and output matching circuit U1, and the difference of impedance transducer T1 is defeated
The first input end for entering connects the colelctor electrode of main power tube Q1, and the second input connects the colelctor electrode of auxiliary power pipe Q2, difference
Ground terminal connects power supply Vdd3 by inductance L6, and power supply Vdd3 is grounded by electric capacity C4；The one output end connection of impedance transducer T1
Output matching circuit U1, another output head grounding.
Output matching circuit U1 in Fig. 5 includes inductance L11, inductance L12, electric capacity C11, electric capacity C12, electric capacity C13；Inductance
Port P11 of the one end of L11 as output matching circuit U1, for connecting the output of impedance transducer T1, inductance L11's is another
On the one hand one end is grounded by electric capacity C11, on the other hand connects one end of inductance L12, and on the one hand the other end of inductance L12 passes through
Electric capacity C12 is grounded, on the other hand connection electric capacity C13, and the other end of electric capacity C13 is loaded for connecting terminal as port P12.
Feedback of Power circuit includes the Differential Input of the colelctor electrode and impedance transducer T1 for being arranged on auxiliary power pipe Q2
Peak detection circuit U2 and N-channel technotron Q5, NPN transistor Q3 and its auxiliary electricity between second input
Road；The grid connection peakvalue's checking circuit U 2 of FET Q5, the sampled voltage exported by peak detection circuit U2 is controlling
On off state；The emitter stage of the drain electrode connection transistor Q4 of FET Q5；The source electrode connection transistor Q3's of FET Q5
Emitter stage；The base stage of transistor Q3 connects the base stage of transistor Q4, and the colelctor electrode of transistor Q3 connects power supply by resistance R5
Vdd2。
The colelctor electrode output of the peak detection circuit U2 in Fig. 6, its port P21 connection auxiliary power pipe Q2, port P22 connect
The second input of the Differential Input of impedance transducer T1 is connect, is a directional coupler between port P21 and P22
The load resistance of Coupler21, resistance R21 for directional coupler, electric capacity C21 connect the coupling port of directional coupler, diode
D21 is detector diode, and dc source DC21 applies suitable bias current to diode D21 by resistance R22, from inductance
The C21 ports power that comes of coupling is produced a DC voltage after dc source D21 rectifications, is shown up by port P23 connections
The grid of effect pipe Q5 plays control action.
In lower-wattage normal range of operation, due to peak detection circuit U2 produce sampled voltage it is relatively low, less than pre-
If threshold value, FET Q5 is off state, bias point works of the main power tube Q1 and auxiliary power pipe Q2 in initial setting
Make, at this moment the working method of biasing circuit is with the no too big difference of traditional open current mirror.When power output is higher than threshold value
When, the sampled voltage of peak detection circuit U2 outputs is raised, and when higher than default threshold value, FET Q5 is opened, to master
The biasing circuit of power tube Q1 and auxiliary power pipe Q2 is compensated, the base current of main power tube Q1 and auxiliary power pipe Q2 and
Voltage is gradually risen with power output, drives respective gain stepping up in the range of high-power output, so as to delay
Gain compression point, improves linear power and its linearity and also improves the efficiency of nearly saturation.The setting of above-mentioned threshold value and two
Individual factor is relevant, and one is to need to proceed by adjustment under which kind of power output, and this can be determined according to concrete application situation, such as
Rated output power is A, for the application of 4G signals can then select to proceed by adjustment in A-2dB or so, and can for 3G etc.
It is adjusted with selecting A-1dB.Two is making the appropriate adjustments, really according to the size and technological parameter of selected FET Q5
Guarantor can be switched on and off in good time.
In addition, the modulated resistance R1 of auxiliary power pipe Q2 is much lower compared with the resistance of the modulated resistance R6 of main power tube Q1, R1
There is a proportionate relationship between R6 resistances, R1 is less, and auxiliary power pipe Q2 risen compensating action is quicker, but the area for compensating
Between may shorten, R1 concrete numerical values generally by emulation and experimental result determine, depending on the size of Q2, the application bar of amplifier
The many factors such as part and rated output power.Under low power state, general power output is contributed by main power tube Q1, in high power
Under state due to Feedback of Power circuit raises total bias voltage, the output proportion of auxiliary power pipe Q2 can just increase.Utilize
The setting of biasing original static operating point and the difference of physical structure, realize the auxiliary power back-off function of a master one, and then
Ensure that consistent Optimal State under different capacity state.
As the sampling of output conversion match circuit needs to take into account wideband and adjustable characteristic simultaneously, impedance transducer T1's
Bandwidth is designed higher than general narrow-band technologies, so resulting power amplifier module applying frequency is wider.
It is due to being to adopt Real-time feed back techniques, all effective to one section of suitable high-power output scope；BIHEMT used
Or BIFET technologies are mature technology, extra production cost is not increased.
As shown in fig. 7, the laying out pattern main signal circuit and main signal biasing circuit of power amplifier module, auxiliary letter in the present embodiment
Number circuit and auxiliary signal biasing circuit and Feedback of Power circuit are designed on flip-chip flip chip, and will output
On substrate, flip-chip is connected by inductance cabling conversion Match circuits with the circuit on substrate, on inductance cabling
It is deployed with adjustable surface mount device SMD.
In Fig. 8, solid line is power amplifier gain and the output power curve figure of traditional power amplifier module, during dotted line is the utility model
The power amplifier gain of power amplifier module and output power curve figure, abscissa are power amplifier gain G ain, and ordinate is power output Pout,
It can be seen that in high-power output region, power amplifier module of the present utility model output work under identical loading condition
Rate has extended, so as to, in the power bracket for being covered, the power amplifier linearity is obtained for power output and is obviously improved.
The above is only preferred embodiment of the present utility model, it should be pointed out that implement row above and the utility model is not constituted
Limit, relevant staff in the range of without departing from the utility model technological thought, carried out it is various change and modifications,
Fall in protection domain of the present utility model.
Claims (4)
1. a kind of power amplifier module for being applied to antenna for mobile phone end, it is characterised in that include：Main signal circuit and main signal biased electrical
Road, auxiliary signal circuit and auxiliary signal biasing circuit, Feedback of Power circuit and output conversion match circuit, main signal biasing circuit
Bias voltage is provided for main signal circuit, supplemented by auxiliary signal biasing circuit, signal circuit provides bias voltage, Feedback of Power circuit
The power output of the auxiliary signal circuit of Real-time Collection, and main signal biasing circuit and auxiliary signal biasing circuit are entered according to collection signal
The power that main signal circuit and auxiliary signal circuit are exported is changed and is exported corresponding by row modulation, output conversion match circuit
Matched signal；
The Feedback of Power circuit includes the peak being arranged between auxiliary signal circuit output end and output conversion match circuit
Value detection circuit U 2 and FET Q5, transistor Q3 and its auxiliary circuit；The grid connection peak value of the FET Q5
Detection circuit U 2, by the sampled voltage of peak detection circuit U2 outputs come controlling switch state；The leakage of FET Q5
Pole connects the main signal biasing circuit and auxiliary signal biasing circuit, for providing modulation voltage；The source electrode of FET Q5 connects
Connect the emitter stage of transistor Q3；The colelctor electrode of transistor Q3 connects power supply Vdd2 by resistance R5；
The output end of the main signal circuit is provided with main power tube Q1, and main power tube Q1 adopts transistor, main signal circuit
Radiofrequency signal is entered the base stage of main power tube Q1, the grounded emitter of main power tube Q1 by electric capacity C2；The output of auxiliary signal circuit
End is provided with auxiliary power pipe Q2, and auxiliary power pipe Q2 adopts the radiofrequency signal of transistor, auxiliary signal circuit to be entered by electric capacity C3
The base stage of auxiliary power pipe Q2, the grounded emitter of auxiliary power pipe Q2；
The main signal biasing circuit and auxiliary signal biasing circuit include：Transistor Q4 and its auxiliary circuit, the transistor Q4
Base stage connect one end of resistance R2, on the one hand the other end of resistance R2 passes through diode series circuit and electric capacity C1 formed
Parallel circuit is grounded, and on the one hand connects power supply Vdd1 by resistance R3；Diode D1 and two is provided with diode series circuit
Pole pipe D2, the anode connection resistance R2 of diode D1, negative electrode connect the anode of diode D2, the minus earth of diode D2；It is brilliant
The colelctor electrode of body pipe Q4 connects power supply Vdd2 by resistance R4；The emitter stage of transistor Q4 passes through what inductance L3 and resistance R6 was formed
Series circuit connects the base stage of main power tube Q1, provides bias voltage for main power tube Q1；The emitter stage of transistor Q4 is by electricity
The series circuit that sense L1 and resistance R1 is formed connects the base stage of auxiliary power pipe Q2, provides bias voltage for auxiliary power pipe Q2；
The base stage of transistor Q4 is also connected with the base stage of transistor Q3, and emitter stage is also connected with the drain electrode of FET Q5；
The output conversion match circuit includes impedance transducer T1 and output matching circuit U1, and the difference of impedance transducer T1 is defeated
The first input end for entering connects the colelctor electrode of main power tube Q1, and the second input connects the colelctor electrode of auxiliary power pipe Q2, difference
Ground terminal connects power supply Vdd3 by inductance L6, and power supply Vdd3 is grounded by electric capacity C4；The one output end connection of impedance transducer T1
Output matching circuit U1, another output head grounding.
2. power amplifier module according to claim 1, it is characterised in that the output matching circuit U1 includes inductance L11, electricity
Sense L12, electric capacity C11, electric capacity C12, electric capacity C13；One end of inductance L11 arranges port P11, for connecting impedance transducer T1's
On the one hand output, the other end of inductance L11 is grounded by electric capacity C11, on the other hand connects one end of inductance L12, inductance L12's
On the one hand the other end is grounded by electric capacity C12, on the other hand connects one end of electric capacity C13, and the other end of electric capacity C13 arranges port
P12, for connecting terminal load.
3. power amplifier module according to claim 1, it is characterised in that the peak detection circuit U2 includes directional coupler
One end of Coupler21, directional coupler Coupler21 arranges the colelctor electrode output of port P21 connection auxiliary power pipe Q2, separately
One end arranges the second input of the Differential Input of port P22 connection impedance transducer T1；The one of directional coupler Coupler21
Individual coupling port is grounded by its load resistance R21, and another coupling port connects one end of electric capacity C21, the other end of electric capacity C21
The grid that P23 ports connect FET Q5 is set, and on the one hand the P23 ports are grounded by diode D21, are on the other hand passed through
Resistance R22 connects dc source DC21.
4. power amplifier module as claimed in any of claims 1 to 3, it is characterised in that the main signal circuit and master
Signal biasing circuit, auxiliary signal circuit and auxiliary signal biasing circuit and Feedback of Power circuit are arranged on flip-chip, institute
State output conversion match circuit to be arranged on substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2016204129035 | 2016-05-09 | ||
| CN201620412903 | 2016-05-09 |
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| CN206041943U true CN206041943U (en) | 2017-03-22 |
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| CN201610725216.3A Active CN106130492B (en) | 2016-05-09 | 2016-08-25 | A kind of power amplifier module applied to antenna for mobile phone end |
| CN201620943571.3U Active CN206041943U (en) | 2016-05-09 | 2016-08-25 | Be applied to cell -phone antenna end's power amplifier module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130492A (en) * | 2016-05-09 | 2016-11-16 | 南京新芯电子科技有限公司 | A kind of power amplifier module being applied to antenna for mobile phone end |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107395143A (en) * | 2017-07-11 | 2017-11-24 | 南京正銮电子科技有限公司 | Third generation semiconductor biasing circuit integrated design |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102170268A (en) * | 2011-04-29 | 2011-08-31 | 中兴通讯股份有限公司 | Power amplification device and power amplification circuit |
| KR20140013084A (en) * | 2011-10-13 | 2014-02-04 | 미쓰비시덴키 가부시키가이샤 | Front-end amplifier |
| CN103023440B (en) * | 2012-12-20 | 2015-10-07 | 中国科学院微电子研究所 | A kind of circuit improving power amplifier linearity |
| CN103986425A (en) * | 2014-04-30 | 2014-08-13 | 无锡中普微电子有限公司 | Power amplifier based on radio-frequency direct current feedback |
| CN106130492B (en) * | 2016-05-09 | 2018-04-10 | 南京新芯电子科技有限公司 | A kind of power amplifier module applied to antenna for mobile phone end |
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2016
- 2016-08-25 CN CN201610725216.3A patent/CN106130492B/en active Active
- 2016-08-25 CN CN201620943571.3U patent/CN206041943U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130492A (en) * | 2016-05-09 | 2016-11-16 | 南京新芯电子科技有限公司 | A kind of power amplifier module being applied to antenna for mobile phone end |
| CN106130492B (en) * | 2016-05-09 | 2018-04-10 | 南京新芯电子科技有限公司 | A kind of power amplifier module applied to antenna for mobile phone end |
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| Publication number | Publication date |
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| CN106130492A (en) | 2016-11-16 |
| CN106130492B (en) | 2018-04-10 |
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