CN206023576U - Buck circuits based on silicon carbide diode - Google Patents
Buck circuits based on silicon carbide diode Download PDFInfo
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- CN206023576U CN206023576U CN201620880658.0U CN201620880658U CN206023576U CN 206023576 U CN206023576 U CN 206023576U CN 201620880658 U CN201620880658 U CN 201620880658U CN 206023576 U CN206023576 U CN 206023576U
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- silicon carbide
- oxide
- metal
- carbide diode
- semiconductor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
This utility model provides a kind of Buck circuits based on silicon carbide diode, including：Silicon carbide diode, metal-oxide-semiconductor, power inductance, the negative electrode of the silicon carbide diode is connected directly to input direct voltage, the anode of the silicon carbide diode is connected with the drain electrode of the metal-oxide-semiconductor, the source ground of the metal-oxide-semiconductor, the grid of the metal-oxide-semiconductor is connected with PWM modulator, and the PWM modulator is driven to the metal-oxide-semiconductor for providing drive signal；The silicon carbide diode anode is also connected with the power inductance, and the power inductance and a capacitor combination form the outfan of Buck circuits to provide output DC voltage.The Buck circuits have the advantages that：Output ripple is little, and inductance peak point current is little, farthest reduces switching loss, improves switching frequency, can significantly reach the target of miniaturization, while also providing extra overheat protective function.
Description
Technical field
This utility model is related to Buck field of circuit technology, more particularly to a kind of Buck electricity based on silicon carbide diode
Road.
Background technology
Buck circuits are also referred to as Buck conversion circuit, and being a kind of output voltage does not isolate directly less than the single tube of input voltage
Stream varying circuit.The characteristics of its voltage conversion efficiency height, good reliability so that the fast transition of voltage/current waveform, meeting in circuit
Produce electromagnetic interference.
Diode in existing Buck circuits typically adopts supper-fast diode, and the time of Reverse recovery is shorter, but meeting
Electric current spine is produced, the switching loss of diode is larger, can also produce electromagnetic radiation.
Utility model content
The purpose of this utility model is to provide a kind of Buck circuits based on silicon carbide diode, existing to solve
The switching loss of the diode existing for Buck circuits is larger, the problems such as electromagnetic radiation.
For achieving the above object, this utility model provides a kind of Buck circuits based on silicon carbide diode, including：
Silicon carbide diode, metal-oxide-semiconductor, power inductance, the negative electrode of the silicon carbide diode are connected directly to input direct-current
Voltage, the anode of the silicon carbide diode are connected with the drain electrode of the metal-oxide-semiconductor, the source ground of the metal-oxide-semiconductor, the MOS
The grid of pipe is connected with PWM modulator, and the PWM modulator is used for providing drive signal driving the metal-oxide-semiconductor；The carborundum
Diode anode is also connected with the power inductance, the power inductance and a capacitor combination formed the outfan of Buck circuits with
Output DC voltage is provided.
It is preferred that the quantity of the silicon carbide diode, metal-oxide-semiconductor is respectively two, the negative electrode of two silicon carbide diodes
It is respectively connected with negative electrode, anode and anode, the drain electrode of the metal-oxide-semiconductor and source electrode are respectively connected with, accordingly, the PWM modulator
Also it is two, the grid of respectively two metal-oxide-semiconductors provides drive signal.
It is preferred that also including the transistor of direct current biasing, the transistor is arranged at the master time that the Buck circuits are located
Lu Zhong, to obtain the change of the PN junction pressure drop under the influence of temperature, for detecting the temperature of the major loop.
It is preferred that also including control circuit, the control circuit is connected with heat abstractor, for obtaining the PN junction pressure drop
The magnitude of voltage of change, and the work efficiency of the heat dissipation equipment is controlled according to the magnitude of voltage.
It is preferred that the silicon carbide diode anode is also connected with the outfan of a current sensor, the current sense
The input of device is connected with the power inductance, and the current sensor is used for the current value for monitoring and detecting power inductance.
It is preferred that also including control circuit, the control circuit is connected with the PWM modulator, for obtaining the electricity
Flow valuve, and the drive signal of the PWM modulator output is adjusted according to the current value.
What this utility model was provided is had the advantages that based on the Buck circuits of silicon carbide diode：
(1) the Buck changers of continuous mode are operated in, inductance peak point current little advantage little with output ripple, carbon
SiClx diode can be under continuous mode work the freewheeling period of Buck changers eliminate reverse peak current, at utmost
Reduction switching loss, improve switching frequency, can significantly reach the target of miniaturization.
(2) detection temperature in Buck changer major loops is placed in using the transistor for being applied with direct current biasing, in changer
The temperature of power device can affect the PN junction pressure drop of transistor, this voltage by and Real-time Feedback to control circuit, after amplification,
Control circuit according to built-in algorithms, the rotating speed of intelligent control cooling fan, to system with most economical radiating, it is to avoid sub-cooled,
So as to reach the optimum balance of system thermal management and electrical efficiency.Extra overheat protective function is also provided simultaneously.
Description of the drawings
The Buck circuit theory diagrams based on silicon carbide diode that Fig. 1 is provided for this utility model；
Buck circuit diagrams based on silicon carbide diode of the Fig. 2 for this utility model preferred embodiment.
Specific embodiment
For this utility model is better described, hereby with a preferred embodiment, and accompanying drawing is coordinated to make in detail this utility model
Illustrate, specific as follows：
As shown in figure 1, the Buck circuits based on silicon carbide diode that the present embodiment is provided, including：
Silicon carbide diode 1, metal-oxide-semiconductor 2, PWM modulator 3 and power inductance L, electric capacity C, wherein, silicon carbide diode 1
Negative electrode is connected directly to input direct voltage VIN, and the anode of silicon carbide diode 1 is connected with the drain electrode of metal-oxide-semiconductor 2, metal-oxide-semiconductor 2
Source ground, the grid of metal-oxide-semiconductor 2 are connected with the outfan of PWM modulator 3, and PWM modulator 3 is used for providing drive signal to grid
Pole drives metal-oxide-semiconductor 2；The anode of silicon carbide diode 1 is also connected with power inductance L, and power inductance L is formed with electric capacity C in combination
The outfan of Buck circuits exports DC voltage VO to provide.
The Buck circuits employ the mode that silicon carbide diode and metal-oxide-semiconductor coordinate to carry out the blood pressure lowering of input voltage and processes,
As silicon carbide diode has the characteristics of size is little, the Reverse recovery time is 0 so that the diode switch of the Buck circuits
Basic without switching loss, preferably overcome reverse recovery current spike existing for existing Buck circuits, switching loss
Larger problem.
In a preferred embodiment, as shown in Fig. 2 the silicon carbide diode in the present embodiment is two, respectively CR1,
CR2, correspondingly the quantity of metal-oxide-semiconductor also for two and be NMOS tube, respectively Q2, Q3, wherein, two silicon carbide diodes
Negative electrode, anode are interconnected respectively, and two metal-oxide-semiconductor drain electrodes and source electrode are respectively connected with, and accordingly, PWM modulator 3 is also two,
Respectively U1, U2, the grid of respectively two metal-oxide-semiconductors Q2, Q3 provide drive signal.
Fig. 2 is referred again to, the circuit also includes that the transistor Q1 of direct current biasing, transistor Q1 are arranged at Buck circuits place
Major loop in, and transistor Q1 is connected with control circuit CB1, for detecting major loop which is located under the influence of temperature
PN junction pressure drop value changes.Wherein, control circuit CB1 in the present embodiment is a single-chip microcomputer.
Additionally, control circuit CB1 in the present embodiment is also connected with heat abstractor as needed, with obtaining transistor Q1's
PN junction pressure drop, and the work efficiency of heat abstractor is controlled according to this voltage drop value.For example, the CB1 is located with Buck circuits are arranged on
The radiator fan at place is connected, and by built-in algorithms, the rotating speed of intelligent control cooling fan, so as to radiate to circuit, it is to avoid
Sub-cooled, so as to reach the optimum balance of system thermal management and electrical efficiency, while may also provide extra overheat protective function.
Fig. 2 is referred again to, the outfan of the anode of the silicon carbide diode in the present embodiment also with a current sensor CS1
Connection, the input of current sensor CS1 are connected with power inductance L, and current sensor CS1 is used for monitoring and detecting power inductance
Current value.
In the present embodiment, power inductance includes that two are respectively L1 and L2, and which coordinates electric capacity C2 to constitute LC wave filter so that
Circuit output is carried in the output voltage VO+on load R1 and VO-.
Wherein, control circuit CB1 is also connected with PWM modulator U1, U2, and control circuit CB1 is used for obtaining current value, and root
According to the drive signal that current value adjusts PWM modulator U1, U2 output, so as to adjust metal-oxide-semiconductor.
Above-mentioned constitutes Buck changers by silicon carbide diode, high-power MOS tube, power inductance and current sensor,
It is operated in continuous mode.Current sensor monitoring and detection inductive current, and control circuit is fed back to, form closed loop control.Work
Make continuous mode Buck changers in, inductance peak point current little advantage little with output ripple, silicon carbide diode energy
The freewheeling period of enough Buck changers under continuous mode work eliminates reverse peak current, farthest reduces switch and damages
Consumption, improves switching frequency.All These characteristics are adapted to the application of high power B uck changer, and significantly can reach
The target of miniaturization.
The above, specific embodiment only of the present utility model, but protection domain of the present utility model do not limit to
In this, any those skilled in the art in the technical scope that this utility model is disclosed, deformation that this utility model is done
Or replace, should all cover within protection domain of the present utility model.Therefore, protection domain of the present utility model should be with described
Scope of the claims is defined.
Claims (6)
1. a kind of Buck circuits based on silicon carbide diode, it is characterised in that include：
Silicon carbide diode, metal-oxide-semiconductor, power inductance, the negative electrode of the silicon carbide diode are connected directly to input direct voltage,
The anode of the silicon carbide diode is connected with the drain electrode of the metal-oxide-semiconductor, the source ground of the metal-oxide-semiconductor, the grid of the metal-oxide-semiconductor
Pole is connected with PWM modulator, and the PWM modulator is used for providing drive signal driving the metal-oxide-semiconductor；The silicon carbide diode
Anode is also connected with the power inductance, and the outfan that the power inductance forms Buck circuits with a capacitor combination is defeated to provide
Go out DC voltage.
2. Buck circuits based on silicon carbide diode according to claim 1, it is characterised in that two pole of the carborundum
Pipe, the quantity of metal-oxide-semiconductor are respectively two, and the negative electrode and negative electrode of two silicon carbide diodes, anode and anode are respectively connected with, described
The drain electrode of metal-oxide-semiconductor and source electrode are respectively connected with, and accordingly, the PWM modulator is also two, respectively the grid of two metal-oxide-semiconductors
Drive signal is provided.
3. Buck circuits based on silicon carbide diode according to claim 1, it is characterised in that also include direct current biasing
Transistor, the transistor is arranged in the major loop that the Buck circuits are located, to obtain the PN junction under the influence of temperature
The change of pressure drop, for detecting the temperature of the major loop.
4. Buck circuits based on silicon carbide diode according to claim 3, it is characterised in that also include control electricity
Road, the control circuit are connected with heat abstractor, for obtaining the magnitude of voltage of the PN junction change in pressure drop, and according to the electricity for obtaining
Pressure value controls the work efficiency of the heat abstractor.
5. Buck circuits based on silicon carbide diode according to claim 1, it is characterised in that two pole of the carborundum
Tube anode is also connected with the outfan of a current sensor, and the input of the current sensor is connected with the power inductance,
The current sensor is used for the current value for monitoring and detecting power inductance.
6. Buck circuits based on silicon carbide diode according to claim 5, it is characterised in that also include control electricity
Road, the control circuit are connected with the PWM modulator, for obtaining the current value, and adjust institute according to the current value
State the drive signal of PWM modulator output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620880658.0U CN206023576U (en) | 2016-08-12 | 2016-08-12 | Buck circuits based on silicon carbide diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620880658.0U CN206023576U (en) | 2016-08-12 | 2016-08-12 | Buck circuits based on silicon carbide diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206023576U true CN206023576U (en) | 2017-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620880658.0U Active CN206023576U (en) | 2016-08-12 | 2016-08-12 | Buck circuits based on silicon carbide diode |
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| CN (1) | CN206023576U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024051553A1 (en) * | 2022-09-09 | 2024-03-14 | 华为数字能源技术有限公司 | Totem-pole pfc circuit and control method therefor, and power source apparatus |
-
2016
- 2016-08-12 CN CN201620880658.0U patent/CN206023576U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024051553A1 (en) * | 2022-09-09 | 2024-03-14 | 华为数字能源技术有限公司 | Totem-pole pfc circuit and control method therefor, and power source apparatus |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |