CN206019848U - The infrared ray sensor of fine vacuum - Google Patents
The infrared ray sensor of fine vacuum Download PDFInfo
- Publication number
- CN206019848U CN206019848U CN201620861545.6U CN201620861545U CN206019848U CN 206019848 U CN206019848 U CN 206019848U CN 201620861545 U CN201620861545 U CN 201620861545U CN 206019848 U CN206019848 U CN 206019848U
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- Prior art keywords
- pedestal
- optical lens
- lens form
- cavity
- infrared ray
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Abstract
The utility model discloses a kind of infrared ray sensor of fine vacuum, includes：One pedestal, an infrared sensing chip, an optical lens form, a getter and multiple plain conductors.There is a cavity and how each and every one conductive part on the pedestal, the plurality of conductive part one end extends.The infrared sensing chip is fixed in the cavity, and there is a wafer, the fabrication are linked on a circuit board thereon, and the circuit board has each and every one conductive junction points many.Multiple the plurality of solder joints of metal line electrical connection and the plurality of conductive junction point.The optical lens form is packaged on the cavity of the pedestal, and there is a first surface and a second surface thereon.The getter after the pedestal and the optical lens form sealing-in, makes the getter be packaged in the cavity formed with optical lens form by the matrix on the second surface of optical lens form.
Description
Technical field
, about a kind of infrared ray sensor, espespecially one kind is without thermoelectric cooling module Thermoelectric for this utility model
Cooling, TEC) two-piece fine vacuum encapsulation infrared ray sensor.
Background technology
, it is known that there is a metal base, the Metal Substrate in order to sense the structure of the infrared ray sensor of thermal source radiation at present
Seat tool has a cavity, is installed with a thermoelectric cooling module (TEC) in the cavity, is connected with one red on the surface of the thermoelectric cooling module
Outside line sensor chip, and a getter is installed with the cavity, it is to be provided with solder sheet above the metal base, with the solder
Piece is fixed in a glassy layer on metal base.When using, outside thermal source radiation (infrared ray) passes through infrared ray sensor
Glassy layer is entered in cavity, and thermal source radiation will be by infrared sensing chip senses exporting clearly image.With getter
The cavity is made to protect a vacuum state, and with produced thermal source during thermoelectric cooling module absorption infrared sensing chip operation,
Enable the infrared sensing chip normal work.
As getter and the infrared sensing chip of above-mentioned infrared ray sensor is in metal base the same side, getter swashs
Living need in high temperature environments (>More than 300 degree), this causes infrared sensing chip bear such high temperature, and loses sense
Effect of testing temperature.Getter and infrared sensing chip are located at homonymy, metal base and need to make weld pad with getter then, cause
Make metal base cost of manufacture higher.Getter need to adopt electric shock mode with the design of infrared sensing chip homonymy, its active mode,
Cannot be activated using heated type, it is higher that the board used because of electric shock mode constructs expense cost.And it is fixed in metal base
There is thermoelectric cooling module, module body product cannot be larger using volume to present compared with microminiaturization design after making encapsulation.
Utility model content
In order to solve above-mentioned technical problem, this utility model provides a kind of infrared ray sensor of fine vacuum, includes：One
Pedestal, an infrared sensing chip, an optical lens form, a getter and multiple plain conductors.There is on the pedestal chamber
Body and multiple conductive parts, the plurality of conductive part one end are extended.The infrared sensing chip is with affixed
In the cavity, there is a ultrared wafer, the fabrication are linked on a circuit board thereon, have on the circuit board many
Individual conductive junction point.Multiple metal line with electrical connections are on the plurality of solder joint and the plurality of conductive junction point.The optical lens form
To be packaged on the cavity of the pedestal, there is a first surface and a second surface thereon.The getter is located at the optical perspective
On the second surface of window.Wherein, the pedestal and the optical lens form sealing-in, getter are packaged on the matrix and the optical lens form
In the cavity for being formed.
In an embodiment of the present utility model, there is in the cavity of the pedestal convex palisade part.
In an embodiment of the present utility model, also include a solder sheet, the solder sheet is located on the convex palisade part, to weld
Connect the optical lens form.
In an embodiment of the present utility model, the second surface is provided with a mask layer.
In an embodiment of the present utility model, the optical lens form is germanium wafer, makes 8 μm -14 μm of far infrared ripple
Long through.
In an embodiment of the present utility model, the pedestal is plastics or ceramic material, the plurality of conductive part of the pedestal
For the pin for having pin, the plurality of conductive part forms the double-row type encapsulating structure of corresponding state located at two side of pedestal, or many
The individual pin can be located at four sides of the pedestal.
In an embodiment of the present utility model, the pedestal is plastics or ceramic material, and the pedestal is the pedestal without pin,
The plurality of conductive part is located at four sides of the pedestal.
This utility model can reach following effect：
This utility model provides a kind of infrared ray sensor without thermoelectric cooling module, makes infrared ray sensor volume-diminished
Can reduce encapsulation procedure technique towards miniaturized design, to drop the pollution for reducing the generation and pedestal of part, and then improve encapsulation
Slip and service life, and reduce cost of manufacture.
This utility model designs getter in the opposite side away from infrared sensing chip, isolates with infrared sensing chip
Design, encapsulation process effectively intercept infrared sensing chip because of temperature influence using the leveled heating mode of board, and allow suction
Gas agent is able to receive activationary temperature, at the same guarantee infrared ray sense side core piece fully functional while and can reach a vacuum compared with
High perfect encapsulation.
Description of the drawings
Fig. 1 is the infrared ray sensor method for packing schematic flow sheet of first embodiment of the present utility model；
Fig. 2 is the stereoscopic schematic diagram of the infrared ray sensor of this utility model first embodiment；
Stereoscopic decomposing schematic representations of the Fig. 3 for Fig. 1；
Second surface schematic diagrams of the Fig. 4 for the optical lens form of Fig. 1；
Second surface another embodiment schematic diagrams of the Fig. 5 for the optical lens form of Fig. 1；
Second surface another embodiment schematic diagrams of the Fig. 6 for the optical lens form of Fig. 1；
Side cross-sectional schematics of the Fig. 7 for Fig. 1；
The stereoscopic decomposing schematic representation of the infrared ray sensor of Fig. 8 second embodiments of the present utility model.
【Symbol description】
Step S100 ~ step S134；
Infrared ray sensor 100,200；
Pedestal 110,210；
Cavity 112,212；
Conductive part 114,214；
Convex palisade part 116；
Solder joint 118,218；
Infrared sensing chip 120,220；
Wafer 122；
Circuit board 124；
Conductive junction point 126；
Solder sheet 130,230；
Optical lens form 140,240；
First surface 142；
Second surface 144；
Mask layer 146；
Getter 150,150a, 150b, 250；
Plain conductor 160.
Specific embodiment
The utility model is described in further detail with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art
This utility model can be better understood from and can be practiced, but illustrated embodiment is not as to restriction of the present utility model.
Fig. 1 is referred to, is the infrared ray sensor method for packing schematic flow sheet of first embodiment of the present utility model；And
Fig. 2-7 of first embodiment is identical with the encapsulation technology of second embodiment Fig. 8, especially exemplified by first embodiment Fig. 2-7 and Fig. 1
Explain, as shown in the figure：First, such as step S100, a pedestal 110 is had, the pedestal 110 has a cavity 112 and multiple leads
Electric portion 114,114 one end of the plurality of conductive part extend the solder joint 118 for forming naked state in the cavity 112.In the pedestal 110
Cavity 112 have a convex palisade part 116, the convex palisade part 116 is in order to the affixed optical lens form 140.In this schema, the pedestal
110 is plastics or ceramic material, and a little conductive parts 114 of the pedestal 110 are the pin for having pin, and the conductive part 114 is located at should
110 2 side of pedestal formed corresponding state double-row type encapsulation (Dual In-Line Package, DIP) structure, or multiple should
Pin located at four sides of the pedestal 110 forming four-row encapsulating structure, or without pin base (leadless chip
Carrier) structure.
Pedestal 110 is sent into and is cleaned by clear water or chemical agent in board, by pedestal by step S102, cleaning treatment
The filth cleaning treatment remained on 110.
Step S104, baking process, by cleaning after pedestal 110 send in baking box, to be carried out using a proper temperature
Baking, the water remained on pedestal 110 or chemical agent are dried.
Cavity 112 inside pedestal 110 is applied colloid, makes the infrared sensing chip 120 by step S106, die bond process
It is attached to inside the cavity 112.The infrared sensing chip 120 is electrically to paste circuit board 124 with ultrared wafer 122
On, there are on the circuit board 124 multiple conductive junction points 126.In this schema, the colloid is insulating cement or conducting resinl.
Step S108, baking are processed, and after the pedestal 110 with 120 die bond of infrared sensing chip, are sent into and are dried in baking box
Roasting, make the colloid dry up.
Step S110, plasma-based process, before pedestal 110 and infrared sensing chip 120 carry out routing, are cleaned using plasma-based
The plurality of conductive junction point 126 of the plurality of solder joint 118 and the infrared sensing chip 120 of pedestal 110 is cleaned, to avoid this many
The oxidation of individual solder joint 118 and the plurality of conductive junction point 126 occurs.
Step S112, routing process, using board by plain conductor electrical communication in the plurality of solder joint of the pedestal 110
118 and the infrared sensing chip 120 the plurality of conductive junction point 126 between.
Step S114, prewelding process, the solder sheet 130 of prewelding is placed on the convex palisade part 116 of the pedestal 110, in case
When entering reflow oven, can be welded with optical lens form 140.
Step S116, inspection are processed, firm with the welding of solder sheet 130 of personnel detecting step S114.
Step S118, test processes, after the completion of processing the step of aforesaid solder sheet 130, with input signal to infrared
Line sensor chip 120, to test whether the wafer 122 of the infrared sensing chip 120 has damage.
Step S120, has an optical lens form 140, and there is a first surface 142 and a second surface 144 thereon, in
The second surface 144 is provided with a mask layer 146, the mask layer 146 region unnecessary to cover the optical lens form 140.
In this schema, the optical lens form 140 is germanium wafer, and 8 μm -14 μm of far infrared wavelength can be allowed to pass through.
Step S122, plasma-based process, before pedestal 110 and optical lens form 140 are welded, clean pedestal using plasma-based
Weld part (not shown) on optical lens form 140 is cleaned by 110, it is to avoid weld part is aoxidized.
Step S124, getter process, by mount technology or coating technique as printed or getter 150 is set by sputter
On the second surface 144 of the optical lens form 140.In this schema, the getter is column or lamellar.
Step S126, enters reflow oven, and the optical lens form 140 with getter 150 and die bond are had infrared sensing core
The pedestal 110 of piece 120 is sent in the reflow oven together.
Step S128, activation process, the getter 150 on optical lens form 140 is carried out using board mode of heating plus
Heat, makes the getter 150 reach working condition.
Step S130, sealing by fusing operation, after getter 150 is activated, using the reflow oven by the solder sheet of the pedestal 110
The optical lens form 140 is welded in 130 meltings, makes the cavity 112 form 100 module of infrared ray sensor of high vacuum state.
Step S132, process of leaking hunting, after pedestal 110 with 140 sealing by fusing of optical lens form, by Test bench 110 and optics
Whether the weld of window 140 is fully engaged, and makes cavity 112 not produce gas leak phenomenon.
Step S134, module electrical measurement, after pedestal 110 forms module with 140 sealing by fusing of optical lens form, are examined with input signal
Whether the imaging signal for surveying the red line external sensed chip 120 is normal.
By, above-mentioned method for packing makes the heat treated of the getter 150 and the layering of infrared sensing chip 120,
To complete the infrared ray sensor of a two-piece fine vacuum encapsulation without thermoelectric cooling module.
Fig. 2,3 and 4 are referred to, outside the first embodiment stereoscopic and Fig. 2 of infrared ray sensor of the present utility model
See the second surface schematic diagram of stereo decomposing and optical lens form.As shown in the figure：This utility model is complete according to above-mentioned encapsulation flow process institute
Into fine vacuum infrared ray sensor 100, include：One pedestal 110, an infrared sensing chip 120, a solder sheet 130,
One optical lens form 140 and a getter 150.Wherein, it is packaged on above the pedestal 110 with the optical lens form 140, makes the base
Seat 110 is internally formed the cavity 112 of fine vacuum to encapsulate the infrared sensing chip 120 and the getter 150, makes the infrared ray
Sensor chip 120 can carry out infrared image reading.
There is a cavity 112 and multiple conductive parts 114 on the pedestal 110,114 one end of the plurality of conductive part extends the chamber
The solder joint 118 of naked state is formed in body 112.There is a convex palisade part 116, the convex palisade part 116 in the cavity 112 of the pedestal 110
In order to the affixed optical lens form 140.In this schema, the pedestal 110 is plastics or ceramic material, and the pedestal 110 should
Multiple conductive parts 114 are have the pin of pin, and the conductive part 114 forms the biserial of corresponding state located at 110 2 side of pedestal
Formula encapsulates (Dual In-Line Package, DIP) structure, or the plurality of pin can be located at four sides of the pedestal 110.
The infrared sensing chip 120, is electrically pasted on circuit board (PCB) 124 with ultrared wafer (die) 122,
There are on the circuit board 124 many each and every one conductive junction points (PAD) 126, the pedestal 110 is fixed in the infrared sensing chip 120
Cavity 112 after, plasma-based (Plasma) process will be carried out, make the plurality of solder joint 118 and the plurality of conductive junction point 126 will not oxygen
Change, after plasma-based process, routing (Wire Bond) process will be carried out, many in this with 160 electrical communication of plain conductor of multiple
On individual solder joint 118 and the plurality of conductive junction point 126, the plurality of conductive part of the infrared sensing chip 120 and the pedestal 110 is made
114 electrical connections.
The solder sheet 130, located at the convex palisade part 116, is entered in reflow oven with the optical lens form 140 in the pedestal 110
When carrying out sealing by fusing operation, you can the optical lens form 140 is packaged on the pedestal 110 by the solder sheet 130, makes the cavity
112 form a high vacuum state.
The optical lens form 140, is to be packaged on the cavity 112 of the pedestal 110, there is a first surface 142 thereon
And a second surface 144, a mask layer 146 is provided with the second surface 144, the mask layer 146 is covering the optical perspective
The unnecessary region of window 140.In this schema, the optical lens form 140 is germanium wafer, can allow 8 μm -14 μm of far infrared
Wavelength is passed through.
Getter (Getter) 150, in the way of sticking together, weld or be coated with as printing or sputter located at the optical lens
On the second surface 144 of form 140.When the getter 150 cannot play air suction function, 110 internal cavity of pedestal will be caused
112 vacuum degree deficiency, it is impossible to allow infrared image to assume clearly image, and service life also relative can be reduced.Therefore, at this
Before pedestal 110 and 140 sealing-in of optical lens form, first getter 150 is activated, then by the pedestal 110 and the optical lens form
140 encapsulation, make, inside the cavity 112, there is high vacuum, enable the infrared image of reception to assume apparent image,
To increase the service life of infrared ray sensor 100.In this schema, the getter 150 is column；To be inhaled using mode of heating
After gas agent 150 is activated, then the pedestal 110 is encapsulated with the optical lens form 140 so that the getter 150 and the infrared ray sense
Survey 120 layered shaping of chip to make, complete a preferably vacuum sealing technique.
Fig. 5 is referred to, is another embodiment schematic diagram of the second surface of the optical lens form of Fig. 2.As shown in the figure：This reality
Apply example roughly the same with Fig. 4, be getter 150a at institute's difference for lamellar, to stick together located at the optical lens form 140
Second surface 144 on, before the pedestal 110 is encapsulated with the optical lens form 140, similarly using mode of heating by getter
After 150a activation, then the pedestal 110 is encapsulated with the optical lens form 140 so that getter 150a and the infrared sensing
The heat treated of the layering of chip 120 makes, and completes a preferably fine vacuum encapsulation technology.
Fig. 6 is referred to, is the another embodiment schematic diagram of the second surface of the optical lens form of Fig. 2.As shown in the figure：This reality
Apply example and Fig. 4,5 roughly the same, be at difference getter 150b in the way of being coated with if printing or sputter are located at this
A specific pattern is shaped on the second surface 144 of optical lens form 140, and this specific pattern does not interfere with the infrared of outside
Linear light is entered inside the cavity 112 of the pedestal 110.After the completion of the getter 150b coating, in the pedestal 110 and the optics
Before window 140 is encapsulated, similarly using mode of heating by the activation of getter 150b after, then by the pedestal 110 and the optical lens
Form 140 is encapsulated so that getter 150b is made with 120 layered shaping of infrared sensing chip, completes one preferably
Vacuum sealing technique.
Fig. 7 is referred to, is the side cross-sectional schematic of Fig. 1.As shown in the figure：In infrared ray sensor of the present utility model 100
Pedestal 110 encapsulate with the optical lens form 140 before, the infrared sensing chip 120 is fixed in by the pedestal with die bond technology
In 110 cavity 112,160 electrical communication of plain conductor is connect in the plurality of solder joint 118 and the plurality of conduction by routing technology
On point 126, then the getter 150 is fixed on the optical lens form 140, while by pedestal 110 and the optical lens form 140
Send in reflow oven, up to working condition, recycling reflow oven to melt the solder sheet 130 will for the first line activating getter 150
Optical lens form 140 is fixed on the pedestal 110, after sealing by fusing operation, makes the infrared sensing chip 120 and the getter
150 are encapsulated in the cavity 112 of the pedestal 110.
Due to, before pedestal 110 is encapsulated with the optical lens form 140, after first activate getter 150, then carrying out pedestal
110 with the encapsulation of optical lens form 140 so that the getter 150 is made with 120 layered shaping of infrared sensing chip, is come
Complete a preferably vacuum sealing technique.
The GAS ABSORPTION of 112 internal residual of cavity can form the cavity 112 by the getter 150 after being activated
High vacuum state, in the state of fine vacuum is good, allow infrared sensing chip 120 to receive infrared image can present apparent
Image, it is also possible to increase the service life of infrared ray sensor 100.
Fig. 8 is referred to, is the stereoscopic decomposing schematic representation of the infrared ray sensor of second embodiment of the present utility model.
As shown in the figure：The infrared sensing chip 220 of infrared ray sensor 200 disclosed in the present embodiment, a solder sheet 230,
One optical lens form 240 and 250 structure of a getter are roughly the same with aforesaid Fig. 2 to Fig. 7, difference at be this schema
Pedestal 210 is the pedestal (leadless chip carrier) without pin, the plurality of conductive part 214 located at the pedestal 210 four
Side, 214 one end of the plurality of conductive part extend the solder joint 218 for forming naked state in the cavity 212.In infrared sensing chip
After 220 are fixed in the cavity 212 of the pedestal 210, by the routing (Wire Bond) process, the infrared sensing chip 220 is made
214 electrical connection of the plurality of conductive part with the pedestal 210.
Embodiment described above is only the preferred embodiment that is lifted for absolutely proving this utility model, this utility model
Protection domain not limited to this.Equivalent substitute or change that those skilled in the art are made on the basis of this utility model
Change, within protection domain of the present utility model.Protection domain of the present utility model is defined by claims.
Claims (7)
1. a kind of infrared ray sensor of fine vacuum, it is characterised in that include：
One pedestal, there is thereon a cavity and multiple conductive parts, the plurality of conductive part one end to extend；
One infrared sensing chip, is fixed in the cavity, and there is a ultrared wafer, the fabrication to be linked to one thereon
On circuit board, there are on the circuit board multiple conductive junction points；
Many metal lines, are electrically connected on the plurality of solder joint and the plurality of conductive junction point；
One optical lens form, is packaged on the cavity of the pedestal, and there is a first surface and a second surface thereon；
One getter, on the second surface of the optical lens form；
Wherein, the pedestal and the optical lens form sealing-in, the getter are packaged on what the matrix and the optical lens form were formed
In cavity.
2. the infrared ray sensor of fine vacuum as claimed in claim 1, it is characterised in that have in the cavity of the pedestal one convex
Wall portion.
3. the infrared ray sensor of fine vacuum as claimed in claim 2, it is characterised in that also include a solder sheet, the weldering
Tablet is located on the convex palisade part, to weld the optical lens form.
4. the infrared ray sensor of fine vacuum as claimed in claim 1, it is characterised in that the second surface is provided with a light shield
Layer.
5. the infrared ray sensor of fine vacuum as claimed in claim 1, it is characterised in that the optical lens form is germanium wafer.
6. the infrared ray sensor of fine vacuum as claimed in claim 1, it is characterised in that the pedestal is plastics or ceramic material
Material, the plurality of conductive part of the pedestal is the pin for having pin, and the plurality of conductive part forms corresponding shape located at two side of pedestal
The double-row type encapsulating structure of state, or multiple pins are located at four sides of the pedestal.
7. the infrared ray sensor of fine vacuum as claimed in claim 1, it is characterised in that the pedestal is plastics or ceramic material
Material, the pedestal are the pedestal without pin, and the plurality of conductive part is located at four sides of the pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620861545.6U CN206019848U (en) | 2016-08-10 | 2016-08-10 | The infrared ray sensor of fine vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620861545.6U CN206019848U (en) | 2016-08-10 | 2016-08-10 | The infrared ray sensor of fine vacuum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206019848U true CN206019848U (en) | 2017-03-15 |
Family
ID=58248321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620861545.6U Expired - Fee Related CN206019848U (en) | 2016-08-10 | 2016-08-10 | The infrared ray sensor of fine vacuum |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206019848U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813445A (en) * | 2017-11-21 | 2019-05-28 | 上海新微技术研发中心有限公司 | Infrared temperature sensor |
-
2016
- 2016-08-10 CN CN201620861545.6U patent/CN206019848U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813445A (en) * | 2017-11-21 | 2019-05-28 | 上海新微技术研发中心有限公司 | Infrared temperature sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170315 Termination date: 20200810 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |