CN206015085U - A kind of CVD reactor - Google Patents
A kind of CVD reactor Download PDFInfo
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- CN206015085U CN206015085U CN201621037771.9U CN201621037771U CN206015085U CN 206015085 U CN206015085 U CN 206015085U CN 201621037771 U CN201621037771 U CN 201621037771U CN 206015085 U CN206015085 U CN 206015085U
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- reactor shell
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- reactor
- cvd reactor
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Abstract
This utility model provides a kind of CVD reactor, including the inner bag inside reactor shell and reactor shell, heater is provided between the inner bag and housing, the bottom of reactor shell is chassis, chassis is provided with support, support is provided with bracket, and the bottom of reactor shell is provided with air intake installation, is provided with exhaust apparatus at the top of reactor shell.Heat insulating member is provided between the heater and reactor shell.Rotation dish is provided with the middle part of the chassis, and rotation dish upper end is connected to support, and rotation dish lower end connects rotatable parts.The air intake installation includes reacting gas inlet and the present dilution gas inlets being arranged on chassis.
Description
Technical field
This utility model is related to Inorganic Non-metallic Materials preparation field, particularly a kind of CVD reactor.
Background technology
In graphite piece surface depositing silicon silicon, generally methyl trichlorosilane is adopted for presoma, chemical vapor deposition occurs
Coat of silicon carbide, by-product HCl gases is obtained after reaction.In some specific applications, it is desirable to which coat of silicon carbide combines densification, can
To prevent the partial impurities of graphite piece from entering response system；In addition, also requiring that coat of silicon carbide is tightly combined, anti-wear performance is good.
For example, the fluidized-bed reactor for preparing grain silicon generally has and uses graphite liner, and in graphite liner surface-coated coat of silicon carbide.
This is required using a kind of special CVD reactor, using the teaching of the invention it is possible to provide harsh environment condition, deposits high-quality
Coat of silicon carbide.But in prior art, the reaction unit of the extensive depositing silicon silicon coating of this industrialization is rarely reported.
Utility model content
Utility model purpose：Technical problem to be solved in the utility model is for the deficiencies in the prior art, there is provided one
Plant CVD reactor.
In order to solve above-mentioned technical problem, this utility model provides a kind of CVD reactor, including reaction
Inner bag inside device housing and reactor shell, is provided with heater, the bottom of reactor shell between the inner bag and housing
For chassis, chassis is provided with support, and support is provided with bracket, and the bottom of reactor shell is provided with air intake installation, reactor shell
Top be provided with exhaust apparatus.
In this utility model, between the heater and reactor shell, heat insulating member is provided with.
In this utility model, rotation dish in the middle part of the chassis, is provided with, rotation dish upper end is connected to support, and rotation dish lower end connects
Switch through dynamic component.
In this utility model, the air intake installation includes that the reacting gas inlet being arranged on chassis and diluent gas enter
Mouthful.
In this utility model, the air intake installation is bottom gas distributor.
In this utility model, the exhaust apparatus is to be arranged on the offgas outlet at the top of reactor shell.
In this utility model, the exhaust apparatus is top gas distributor, it is to avoid gas-phase space air-flow is in reactor
Top polymerization, contributes to forming more uniform flow field and thermal field.
In this utility model, the thermal insulation layer that the heat insulating member is spliced for graphite cake completely cuts off the heat of reactor, keeps away
Thermal loss is exempted from.
In this utility model, the rotatable parts are sealed by outside framework oil seal.
Beneficial effect：This device reaction inside pipe wall has heat insulating member, and heat insulating member is made up of graphite, and effectively isolation is anti-
Answer the heat of device, it is to avoid thermal loss.
The core on chassis is provided with rotation dish, connects rotatable parts below rotation dish, drives the support in rotation dish to turn
Dynamic, so that depositing base is deposited in more uniform gas-phase space, the coat of silicon carbide for obtaining is more uniform.
Reactor head has distributor, and reactor is derived in bootable gas dispersion, so as to avoid gas-phase space air-flow from existing
The top polymerization of reactor, contributes to forming more uniform flow field and thermal field, so as to contribute to depositing uniform carborundum
Coating.
Description of the drawings
With reference to the accompanying drawings and detailed description this utility model is done and is further illustrated, this utility model
Above-mentioned or otherwise advantage will become apparent.
Fig. 1 is the structural representation of this device；
Fig. 2 is chassis gas distributor schematic diagram；
Fig. 3 is support schematic diagram；
Fig. 4 is bracket schematic diagram.
Specific embodiment
This utility model is elaborated below in conjunction with accompanying drawing.
Such as Fig. 1, fill including end socket 1, straight length 2, chassis 3, offgas outlet 4, reactor shell 5, heat insulating member 6, heating
Put 7, reacting gas inlet 8, present dilution gas inlets 9, support 10, bracket 11, inner bag 12, bottom gas distributor 13, top gas
Body distributor 14 and rotatable parts 15, chassis 3, reaction straight length 2 and end socket 1 are connected by flange seal two-by-two, are constituted closed
Reaction compartment, wherein inside reactor has heater 7, provides heat for chemical vapour deposition reaction；2 inwall of straight length
There is heat insulating member 6, the heat insulating member 6 to be located between heater 7 and reactor shell, heat insulating member is spliced by graphite cake
Form, be spliced into one layer of thermal insulation layer and be close to straight length inwall.The graphite heat insulating member has certain thickness, for example, at least
10cm thickness, then such as 12cm, 14cm, 15cm, 17cm, but not limited to this.It will be appreciated by persons skilled in the art that working as stone
When black thickness is thicker, insulation effect is better, but can undoubtedly occupy the more inner spaces of reactor, and the reaction for wasting reactor is empty
Between.Using the insulating characteristicses of graphite material so that when gas-phase space is higher than 1000 DEG C, through the effect of graphite heat insulating member, instead
Device housing outer surface temperature is answered to be reduced to only 20-30 DEG C, effectively the heat of isolation reactor, it is to avoid thermal loss.And do not adopt
During with the graphite heat insulating member, at least up to more than 150 DEG C of the reactor shell hull-skin temperature.Chassis 3 is provided with air inlet
Device, can be reacting gas inlet 8 and present dilution gas inlets 9, or bottom gas distributor 13.Also fix on chassis
There is support 10, on support, be fixed with bracket 11, for placing the graphite member for needing depositing silicon silicon.Inner bag 12 can be graphite
Inner bag prepared by material, specially very thin one layer of graphite sleeve can effectively prevent carborundum from depositing on the heating, it is to avoid
Heater fouling is damaged.
Such as Fig. 2, chassis 3 is provided with a circle bottom gas distributor 13.Circumferentially it is evenly distributed and is provided with 6 air inlets, this reality
Apply an air inlet and arrange 6, the quantity not limited to this of air inlet in practical application can for example be 8,9,12,16
Or it is more.
Such as Fig. 3 and Fig. 4, graphite holders and bracket are engraved structure, are specifically that graphite holders side wall is uniformly distributed some
Individual hole 16, is conducive to gas to be evenly distributed, and the inner space that particularly support and bracket are surrounded also is evenly distributed with reacting gas,
Ensure graphite piece one layer of coat of silicon carbide of surface uniform deposition.
Preferably, rotation dish is provided with the middle part of the chassis 3, and rotation dish upper end is connected to support 10, and rotation dish lower end connects
Rotatable parts 15, the center on chassis 3 also are provided with air inlet.Realized by driven by engine drive disk assembly the lower section of rotatable parts 15
Rotatable parts are rotated, for example, be driven by way of gear is engaged, and drive center chassis partial turn.Rotating part passes through skeleton
Oil sealing is sealed.Rotatable parts 15 drive the holder pivots on chassis by rotation dish, so that depositing base is more
Deposit in uniform gas-phase space, the coat of silicon carbide for obtaining is more uniform.
Preferably, reactor head has top gas distributor 14, and reactor is derived in bootable gas dispersion, so as to avoid
Gas-phase space air-flow is polymerized at the top of reactor, contributes to forming more uniform flow field and thermal field, so as to contribute to depositing
Go out uniform coat of silicon carbide.
Reaction straight length 2 and end socket 1 are connected the cover to be formed to cover on chassis 3 by flange seal, and passes through flange
It is tightly connected to form closed reactor, flange is bolted closely connection, flange connections arrange sealing ring and sealed,
If needing to feed (placement depositing base), need to take flange apart, lift the bell jar, fed, this device, will be clean when using
Net graphite member is placed on the bracket 11 in CVD reactor, is evacuated to reaction condition, is filled by heating
Put and be heated to reaction temperature, reacting gas is passed through from the air intake installation of bottom and starts chemical vapour deposition reaction, sunk
After product a period of time, the coat of silicon carbide of target thickness is obtained, by predetermined temperature gradient cooling, nitrogen displacement is passed through, is cooled to
The graphite composite material with coat of silicon carbide is obtained after room temperature.
This utility model provides a kind of CVD reactor, implements the method and approach of the technical scheme
A lot, the above is only preferred implementation of the present utility model, it is noted that for the ordinary skill people of the art
For member, on the premise of without departing from this utility model principle, some improvements and modifications can also be made, these improvements and modifications
Also of the present utility model protection domain should be regarded as.In the present embodiment, clearly not each ingredient can use prior art in addition real
Existing.
Claims (9)
1. a kind of CVD reactor, it is characterised in that internal including reactor shell (5) and reactor shell (5)
Inner bag (12), be provided with heater (7) between the inner bag and reactor shell (5), the bottom of reactor shell (5) is bottom
Disk (3), chassis (3) are provided with support (10), and support (10) is provided with bracket (11), the bottom of reactor shell (5) be provided with into
Device of air, reactor shell are provided with exhaust apparatus at the top of (5).
2. a kind of CVD reactor according to claim 1, it is characterised in that heater (7) and
Heat insulating member (6) is provided between reactor shell (5).
3. a kind of CVD reactor according to claim 1, it is characterised in that set in the middle part of chassis (3)
There are rotation dish, rotation dish upper end to be connected to support (10), rotation dish lower end connection rotatable parts (15).
4. a kind of CVD reactor according to claim 1, it is characterised in that the air intake installation includes setting
Put the reacting gas inlet (8) on chassis and present dilution gas inlets (9).
5. a kind of CVD reactor according to claim 1, it is characterised in that the air intake installation includes bottom
Portion's gas distributor (13).
6. a kind of CVD reactor according to claim 1, it is characterised in that the exhaust apparatus is for arranging
Offgas outlet (4) at the top of reactor shell (5).
7. a kind of CVD reactor according to claim 1, it is characterised in that the exhaust apparatus includes pushing up
Portion's gas distributor (14).
8. a kind of CVD reactor according to claim 2, it is characterised in that heat insulating member (6) are
The thermal insulation layer that graphite cake is spliced.
9. a kind of CVD reactor according to claim 3, it is characterised in that described rotatable parts (15) lead to
Cross outside framework oil seal to be sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621037771.9U CN206015085U (en) | 2016-09-05 | 2016-09-05 | A kind of CVD reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621037771.9U CN206015085U (en) | 2016-09-05 | 2016-09-05 | A kind of CVD reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206015085U true CN206015085U (en) | 2017-03-15 |
Family
ID=58258735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621037771.9U Active CN206015085U (en) | 2016-09-05 | 2016-09-05 | A kind of CVD reactor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206015085U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191808A (en) * | 2016-09-05 | 2016-12-07 | 江苏协鑫特种材料科技有限公司 | A kind of CVD reactor |
| CN109717764A (en) * | 2017-10-27 | 2019-05-07 | 广东美的生活电器制造有限公司 | Cup body component and soy bean milk making machine |
-
2016
- 2016-09-05 CN CN201621037771.9U patent/CN206015085U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191808A (en) * | 2016-09-05 | 2016-12-07 | 江苏协鑫特种材料科技有限公司 | A kind of CVD reactor |
| CN109717764A (en) * | 2017-10-27 | 2019-05-07 | 广东美的生活电器制造有限公司 | Cup body component and soy bean milk making machine |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 221000 No.66, Yangshan Road, economic and Technological Development Zone, Gulou District, Xuzhou City, Jiangsu Province Patentee after: JIANGSU GCL SPECIAL MATERIAL TECHNOLOGY CO.,LTD. Patentee after: Jiangsu Xinhua Semiconductor Technology Co.,Ltd. Address before: 221000 No.66, Yangshan Road, economic and Technological Development Zone, Gulou District, Xuzhou City, Jiangsu Province Patentee before: JIANGSU GCL SPECIAL MATERIAL TECHNOLOGY CO.,LTD. Patentee before: JIANGSU XINHUA SEMICONDUCTOR MATERIALS TECHNOLOGY CO.,LTD. |