CN205961428U - Two monomer speaker modules and electronic equipment - Google Patents

Two monomer speaker modules and electronic equipment Download PDF

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Publication number
CN205961428U
CN205961428U CN201620714675.7U CN201620714675U CN205961428U CN 205961428 U CN205961428 U CN 205961428U CN 201620714675 U CN201620714675 U CN 201620714675U CN 205961428 U CN205961428 U CN 205961428U
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China
Prior art keywords
back cavity
module
barricade
volume
mcu system
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Expired - Fee Related
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CN201620714675.7U
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Chinese (zh)
Inventor
孙小光
邵帅
贾锋超
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Goertek Inc
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Goertek Inc
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Priority to CN201620714675.7U priority Critical patent/CN205961428U/en
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Abstract

The utility model discloses a two monomer speaker modules and electronic equipment, this module include module casing, barricade and two the same speaker monomers, the module casing set up for have with two mounted positions of two speaker monomer one -to -ones, with two ante -chambers of two speaker monomer one -to -ones and mutual isolation, and total back cavity, barricade fixed mounting is in total back cavity to splitting into total back cavity respectively and corresponding two free first back cavities of speaker and second back cavity, wherein, the volume of first back cavity is greater than the volume of second back cavity, and first back cavity and volume commission between the second back cavity get difference between couple two resonant frequency of monomer speaker modules appearance at 30Hz to between the 100Hz. The utility model discloses the module has than high sensitivity and lower resonant frequency.

Description

Dual MCU system speaker module and electronic equipment
Technical field
This utility model is related to electro-acoustic product technical field, more specifically, this utility model is related to a kind of dual MCU system raising one's voice Device module and the electronic equipment being provided with this kind of dual MCU system speaker module.
Background technology
Make rapid progress with electronic product, update, speaker module gradually develops to light, thin, compact direction, and And also the performances such as the sensitivity of speaker module, resonant frequency (F0) are put forward higher requirement, therefore, traditional has one The speaker module of individual loudspeaker monomer can not meet the requirements at the higher level that sound effect is proposed, for example, obtains more highly sensitive Degree and relatively low resonant frequency.In order to solve these problems, it is currently suggested the concept of dual MCU system module, therefore, how by right The design of dual MCU system module makes particular characteristic parameter reach target and has become as important research topic.
Utility model content
A purpose of the present utility model is that offer is a kind of is obtained in that the new of the dual MCU system module compared with low resonant frequency Technical scheme.
According to first aspect of the present utility model, there is provided a kind of dual MCU system speaker module, it includes module casing, gear Wall and two identical loudspeaker monomers;Described module casing is arranged to have and two loudspeaker monomers one-to-one two Individual installation site and a total back cavity;Described two loudspeaker monomers be arranged on each self-corresponding installation site on;Described Barricade is fixedly mounted in described total back cavity, described total back cavity is divided into the first of corresponding first loudspeaker monomer Back cavity and the second back cavity of corresponding second loudspeaker monomer, wherein, the volume of described first back cavity is more than described second back cavity Volume, and the difference in volume between described first back cavity and described second back cavity makes described dual MCU system speaker module occur Difference between two resonant frequencies is between 30Hz to 100Hz.
Optionally, the difference in volume between described first back cavity and described second back cavity makes described dual MCU system speaker mould Difference between two resonant frequencies that group occurs is between 50Hz to 80Hz.
Optionally, the volume of described first back cavity accounts for the percentage ratio of the volume of described total back cavity and is less than or equal to 60%.
Optionally, described barricade is adhesively fixed in described total back cavity.
Optionally, described barricade is made up of sound-absorbing material;Or, described barricade includes moulding body processed and is bonded in described Mould the sound-absorbing material on body processed.
Optionally, described barricade extends to neighbouring described two installation sites from the bottom up of described total back cavity Position terminates, so that described first back cavity is communicated in the side of neighbouring described two installation sites with described second back cavity.
Optionally, the knot of the middle section specular between described total back cavity has with regard to described two installation sites Structure.
Optionally, described barricade is arranged parallel to described middle section.
According to second aspect of the present utility model, there is provided a kind of electronic equipment, this electronic equipment is provided with according to this reality With the electronic equipment described in new first aspect.
One of the present utility model has the beneficial effects that, this utility model dual MCU system speaker module passes through barricade to module Total back cavity of housing carries out not waiting segmentation, so that two resonant frequencies that being closer to occurs in module (impedance double Peak), so, you can to reduce the resonant frequency of module in the case of not affecting module performance and to improve intermediate frequency sensitivity.
By the detailed description to exemplary embodiment of the present utility model referring to the drawings, other of the present utility model Feature and its advantage will be made apparent from.
Brief description
Combined in the description and the accompanying drawing of the part that constitutes description shows embodiment of the present utility model, and And be used for explaining principle of the present utility model together with its explanation.
Fig. 1 is a kind of internal structure schematic diagram of the embodiment according to this utility model dual MCU system speaker module;
Fig. 2 is the decomposition texture schematic diagram of dual MCU system speaker module shown in Fig. 1;
Fig. 3 is the internal structure schematic diagram of the reference module of module shown in corresponding Fig. 1;
Fig. 4 a is the sensitivity-frequency variation curve of module shown in Fig. 3;
Fig. 4 b is the impedance-frequency change curve of module shown in Fig. 3;
Fig. 5 a is the sensitivity-frequency variation curve of module shown in Fig. 1;
Fig. 5 b is the impedance-frequency change curve of module shown in Fig. 1;
Fig. 6 is a kind of flow chart of embodiment of the method for designing according to this utility model module.
Description of reference numerals:
1- module casing;1a- back cover;
1b- fore shell;101a, 101b- installation site;
The total back cavity of 104-;104a- first back cavity;
104b- second back cavity;2a, 2b- loudspeaker monomer;
3- barricade.
Specific embodiment
To describe various exemplary embodiment of the present utility model now with reference to accompanying drawing in detail.It should be noted that:Unless it is another Illustrate outward, the positioned opposite, numerical expression of the part otherwise illustrating in these embodiments and step and numerical value do not limit Make scope of the present utility model.
Description only actually at least one exemplary embodiment is illustrative below, never as to this practicality Any restriction that is new and its applying or use.
May be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable When in the case of, described technology, method and apparatus should be considered a part for description.
In all examples with discussion shown here, any occurrence should be construed as merely exemplary, and not It is as restriction.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that:Similar label and letter represent similar terms in following accompanying drawing, therefore, once a certain Xiang Yi It is defined in individual accompanying drawing, then do not need it is further discussed in subsequent accompanying drawing.
Fig. 1 is a kind of structural representation of the internal structure of the embodiment according to this utility model dual MCU system speaker module Figure.Fig. 2 is the decomposition texture schematic diagram of module shown in Fig. 1.
According to Fig. 1 and Fig. 2, dual MCU system speaker module of the present utility model includes module casing 1, barricade 3 and two Individual identical loudspeaker monomer 2a, 2b.
Module casing 1 is arranged to there is installation site 101a corresponding with loudspeaker monomer 2a and loudspeaker monomer 2b Corresponding installation site 101b and a total back cavity 104.
Loudspeaker monomer 2a is arranged in corresponding installation site 101a, and loudspeaker monomer 2b is arranged on corresponding installation position Put on 101b.
Barricade 3 is fixedly mounted in total back cavity 104, and total back cavity 104 is divided into corresponding first speaker list The first back cavity 104a of the body 2a and second back cavity 104b of corresponding second loudspeaker monomer 2b, wherein, the first back cavity 104a's Volume is more than the volume 104b of the second back cavity, and the difference in volume between the first back cavity 104a and the second back cavity 104b makes dual MCU system The difference that speaker module has between two resonant frequencies, and two resonant frequencies (includes 30Hz between 30Hz to 100Hz And 100Hz), this difference can be limited between 50Hz to 80Hz (including 50Hz and 80Hz) further, and this resonant frequency is low Frequency range resistance value reaches corresponding frequency during maximum.
First monomer module of this explanation composition dual MCU system speaker module and the resonant frequency not phase of second comonomer module With, and therebetween differ 30Hz to 100Hz, wherein, the first monomer module by first speaker 2a (have independent before Chamber) and the first back cavity 104a composition, second comonomer module is by second speaker 2b (having independent ante-chamber) and the second back cavity 104b forms.
Resonant frequency F of monomer module0Computing formula be:
Wherein, FsFor forming the resonant frequency of the loudspeaker monomer of monomer module;Vb is the back cavity volume of monomer module;ρ0 For atmospheric density, generally take 1.21Kg/m3;Sd is the effective radiating area (m of the loudspeaker monomer forming monomer module2);C is THE VELOCITY OF SOUND IN AIR, generally takes 344m/s;Mms is the equivalent mass of vibrational system;Cms is the equivalent of the support system of vibrational system Mechanical compliance.
As can be seen here, resonant frequency F of monomer module is can determine according to formula (1) and formula (2)0, back cavity volume Vb Resonant frequency F with loudspeaker monomersRelation between three, and then in the case that the volume of total back cavity 104 is certain, energy Enough obtain the first back cavity 104a and the volume of the second back cavity 104b, so that the difference of two resonant frequencies of dual MCU system speaker module Value is between 30Hz to 100Hz.
If removing barricade 3 on the basis of this utility model dual MCU system speaker module, total back cavity 104 will be according to Installation site 101a and installation site 101b are virtually divided into the rear portion corresponding to first loudspeaker monomer 2a and correspondence The rear portion of second loudspeaker monomer 2b, wherein, installation site 101a and installation site 101b normal conditions are with regard to carrying out The virtual plane specular dividing, here, the dual MCU system speaker module removing barricade 3 is referred to as with reference to module, Fig. 3 illustrates This kind is with reference to the internal structure schematic diagram of module.If total back cavity 104 is with regard to this virtual plane specular or near Like specular, then will be equal with reference to the first monomer module of module and the resonant frequency of second comonomer module, this illustrates reference The resonant frequency of module is by the resonant frequency of two monomer modules equal to itself.
And for this utility model dual MCU system speaker module, because total back cavity 104 is divided into the first back cavity by barricade 3 104a and the second back cavity 104b, and the volume of the first back cavity 104a is more than the volume of the second back cavity 104b, therefore, in speaker list Body phase with the case of, due to the back cavity volume of the first monomer module of this utility model module be more than above-mentioned with reference to the of module The back cavity volume of one monomer module, therefore, the former resonant frequency will be less than the resonant frequency of the latter, in the same manner, due to this practicality The back cavity volume of the second comonomer module of new module is less than the back cavity volume of the above-mentioned second comonomer module with reference to module, because This, the former resonant frequency will be above the resonant frequency of the latter, and this explanation this utility model module will have two resonant frequencies, There is impedance bimodal.
Fig. 4 a is the curve that the above-mentioned sensitivity with reference to module (respectively total back cavity) changes with frequency.Can according to Fig. 4 a Know, the average of sensitivity 1-2KHz is 98.1dB.
Fig. 5 a is the curve that changes with frequency of sensitivity of this utility model module.According to Fig. 5 a, sensitivity 1- The average of 2KHz is promoted to 99.5dB, improves 1.4dB.
Fig. 4 b is the curve that the above-mentioned impedance with reference to module (respectively total back cavity) changes with frequency.According to Fig. 4 b, Resonant frequency with reference to module is 610Hz.
Fig. 5 b is the curve that changes with frequency of impedance of this utility model module.According to Fig. 5 b, this utility model mould The resonant frequency of group is 530Hz, reduces 80Hz.
According to Fig. 4 a, Fig. 4 b, Fig. 5 a and Fig. 5 b, this utility model is using the bimodal resonance frequency reducing module of impedance Rate, and improve the intermediate frequency sensitivity of module, effectively protected by making two close to each other being overlapped of resonant frequency simultaneously Demonstrate,prove the performance of module.Further, since this utility model module to improve intermediate frequency compared with the reference module of same size sensitive Degree, therefore, this utility model avoids because sensitivity is not enough and expands monomer size, not only saves the inner space of module, also Disclosure satisfy that the smaller thinner requirement of module.
For the ease of realizing the resonant frequency to the first monomer module of this utility model module and second comonomer module The restriction of close degree, in a specific embodiment of the present utility model, can make the appearance of the first back cavity 104a by barricade 3 The long-pending percentage ratio accounting for total volume of back cavity 104 is less than or equal to 60%.
In a specific embodiment of the present utility model, above-mentioned barricade 3 is adhesively fixed in total back cavity 104.At this In the other embodiment of utility model, above-mentioned barricade 3 can also be fixedly connected on total back cavity by means such as ultrasonic bonding In.
In a specific embodiment of the present utility model, this barricade 3 has sound-absorbing material composition, can also pass through gear Wall 3 adjusts tonequality.It can be that barricade 3 is made up of sound-absorbing material or barricade includes that this barricade 3 has sound-absorbing material composition Mould body processed and be bonded in sound-absorbing material moulding on body processed etc..This sound-absorbing material.
Sound-absorbing material according to its standard be defined as by 250,500, the average sound absorption coefficient of tetra- frequencies of 1K, 2K is more than It is sound-absorbing material that 0.2 material is classified as.Sound-absorbing material is mostly loose porous material, such as mineral wool, foam, silicon dioxide, Zeolite, acoustical cotton etc..The sound absorbing mechanism of sound-absorbing material is the hole that sound wave gos deep into material, and hole mostly is what interpenetrated in inside Open pore, is acted on by air molecule friction and viscosity resistance, makes fiber fines make mechanical vibration, so that acoustic energy is changed into Heat energy.The acoustic absorptivity of this kind of porous sound-absorbing material is typically gradually increased from low to high, therefore the sound to high frequency and intermediate frequency Sound assimilation effect is preferable.
In a specific embodiment of the present utility model, see figures.1.and.2 shown, barricade 3 is from total back cavity 104 The position that bottom up extends to neighbouring two installation sites 101a, 101b terminates, and this explanation barricade 3 will be with two speaker lists Body 2a, 2b, leave gap towards between the surface of back cavity 104, so that the first back cavity 104a and the second back cavity 104b is neighbouring The side of two installation sites 101a, 101b communicates, and this kind of structure enables two back cavities 104a, 104b to share total back cavity 104 damping hole.
In a specific embodiment of the present utility model, between above-mentioned total back cavity has with regard to two installation sites The structure of the middle section virtual plane of module (ask for an interview with reference to) specular, being introduced for of this middle section limits total back cavity Structure, it is an invisible virtual plane.On this basis, in a specific embodiment of the present utility model, should Barricade 3 is arranged parallel to this middle section.
For the ease of installing loudspeaker monomer 2a, 2b, in a specific embodiment of the present utility model, referring to Fig. 2 institute Show, module casing 1 includes back cover 1a and fore shell 1b, wherein, two installation sites 2a, 2b are formed on fore shell 1b, back cover 1a with Fore shell 1b snaps together and forms total back cavity 104.After back cover 1a and fore shell 1b snaps together, the handss such as ultra-sonic welded can be passed through Section is fixed together.On this basis, barricade 3 can be arranged on fore shell 1b.
This utility model additionally provides a kind of electronic equipment, and this electronic equipment is, for example, mobile phone, panel computer, MP4 etc., its It is provided with according to dual MCU system speaker module of the present utility model.
This utility model additionally provides a kind of method for designing of dual MCU system speaker module, and Fig. 6 shows this kind of design side A kind of flow chart of the embodiment of method.
According to Fig. 6, this method for designing includes:
Step S601, chooses two identical loudspeaker monomers, and two loudspeaker monomers of this description selection have identical Resonant frequency, execution step S602 afterwards.
Step S602, chooses the module casing matching with loudspeaker monomer, wherein, module casing has is raised one's voice with two One-to-one two installation sites of device monomer and two loudspeaker monomers correspond and two mutually isolated ante-chambers and One total back cavity, execution step S603 afterwards.
Step S603, according to above-mentioned formula (1) and formula (2), divides equally total back cavity according to two loudspeaker monomers and calculates The resonant frequency of dual MCU system speaker module, as with reference to resonant frequency, execution step S604 afterwards.
Step S604, sets the first resonant frequency and is less than with reference to resonant frequency, execution step S605 afterwards.
Step S605, according to the resonant frequency of loudspeaker monomer, according to above-mentioned formula (1) and formula (2), calculating will obtain First resonant frequency corresponding back cavity volume is as target volume, execution step S606 afterwards.
Step S606, removes target volume from the volume of total back cavity, obtains residual volume, afterwards execution step S607.
Step S607, the resonant frequency according to loudspeaker monomer and residual volume, are calculated using formula (1) and formula (2) Second resonant frequency, execution step S608 afterwards.
Step S608, judge difference between the second resonant frequency and the first resonant frequency whether 30Hz to 100Hz it Between, in this way, then execution step S609, such as no, then return to the first resonant frequency that the modification of step S604 sets.
Step S609, determines that the first resonant frequency is target resonance frequency, execution step S410 afterwards.
Step S610, installs barricade in total back cavity, is raised with total back cavity being divided into corresponding first by barricade First back cavity of sound device monomer and the second back cavity of corresponding second loudspeaker monomer, and the volume of the first back cavity is equal to corresponding mesh The target volume of mark resonant frequency.
In order to the quick position determining barricade, in a specific embodiment of the present utility model, can be in step In S604, set expection resonant frequency to be obtained first as the first resonant frequency, if the first resonant frequency of setting first Meet the condition as target resonance frequency, then can determine that the position of barricade;If the first resonant frequency of setting first is not Meet the condition as target resonance frequency, then increase fixing frequency to set step pitch again, this step pitch is, for example, 5-10Hz, with The first resonant frequency that modification sets, until the condition that amended first resonant frequency meets as target resonance frequency is Only, so that designing the resonant frequency of the module obtaining as close possible to target.
In a specific embodiment of the present utility model, total back cavity has with regard to cutting between two installation sites The structure of face specular, and by barricade along the direction setting parallel to middle section.
Each embodiment in this specification is all described by the way of going forward one by one, identical similar portion between each embodiment Divide cross-reference, what each embodiment stressed is the difference with other embodiment, and each embodiment Can be used alone as needed or be combined with each other.
Although being described in detail to some specific embodiments of the present utility model by example, this area It is to be understood by the skilled artisans that example above is merely to illustrate, rather than in order to limit scope of the present utility model.This Field it is to be understood by the skilled artisans that can be in the case of without departing from scope and spirit of the present utility model, to above example Modify.Scope of the present utility model is defined by the following claims.

Claims (9)

1. a kind of dual MCU system speaker module is raised one's voice it is characterised in that including module casing (1), barricade (3) and two identicals Device monomer (2a, 2b);Described module casing (1) is arranged to have and two loudspeaker monomers (2a, 2b) one-to-one two Individual installation site (101a, 101b) and a total back cavity (104);Described two loudspeaker monomers (2a, 2b) be arranged on respectively On self-corresponding installation site (101a, 101b);Described barricade (3) is fixedly mounted in described total back cavity (104), by institute State that total back cavity (104) is divided into first back cavity (104a) of corresponding first loudspeaker monomer (2a) and correspondence second is raised one's voice Second back cavity (104b) of device monomer (2b), wherein, the volume of described first back cavity (104a) is more than described second back cavity (104b) difference in volume between volume, and described first back cavity (104a) and described second back cavity (104b) makes described double single Difference between two resonant frequencies that body speaker module occurs is between 30Hz to 100Hz.
2. dual MCU system speaker module according to claim 1 it is characterised in that described first back cavity (104a) with described Difference in volume between second back cavity (104b) makes the difference between two resonant frequencies that described dual MCU system speaker module occurs Value is between 50Hz to 80Hz.
3. dual MCU system speaker module according to claim 1 is it is characterised in that the volume of described first back cavity (104a) The percentage ratio accounting for the volume of described total back cavity is less than or equal to 60%.
4. dual MCU system speaker module according to claim 1 is it is characterised in that described barricade (3) is adhesively fixed on institute State in total back cavity.
5. dual MCU system speaker module according to claim 1 is it is characterised in that described barricade (3) is by sound-absorbing material system Become;Or, the sound-absorbing material that described barricade (3) includes moulding body processed and moulds on body processed described in being bonded in.
6. dual MCU system speaker module according to claim 1 it is characterised in that described barricade (3) from described total after The position that the bottom up in chamber (104) extends to neighbouring described two installation sites (101a, 101b) terminates, so that described first Back cavity (104a) is communicated in the side of neighbouring described two installation sites (101a, 101b) with described second back cavity (104b).
7. dual MCU system speaker module according to any one of claim 1 to 6 is it is characterised in that described total back cavity (104) have with regard to described two installation sites (101a, 101b) between middle section specular structure.
8. dual MCU system speaker module according to claim 7 is it is characterised in that described barricade (3) is parallel in described Section is arranged.
9. a kind of electronic equipment is it is characterised in that be provided with the dual MCU system speaker mould any one of claim 1-8 Group.
CN201620714675.7U 2016-07-07 2016-07-07 Two monomer speaker modules and electronic equipment Expired - Fee Related CN205961428U (en)

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Application Number Priority Date Filing Date Title
CN201620714675.7U CN205961428U (en) 2016-07-07 2016-07-07 Two monomer speaker modules and electronic equipment

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Application Number Priority Date Filing Date Title
CN201620714675.7U CN205961428U (en) 2016-07-07 2016-07-07 Two monomer speaker modules and electronic equipment

Publications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019205713A1 (en) * 2018-04-28 2019-10-31 歌尔股份有限公司 Loudspeaker module and electronic equipment
CN113993049A (en) * 2021-08-26 2022-01-28 地球山(北京)科技有限公司 MEMS digital loudspeaker design method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019205713A1 (en) * 2018-04-28 2019-10-31 歌尔股份有限公司 Loudspeaker module and electronic equipment
CN113993049A (en) * 2021-08-26 2022-01-28 地球山(北京)科技有限公司 MEMS digital loudspeaker design method
CN113993049B (en) * 2021-08-26 2022-05-27 地球山(北京)科技有限公司 MEMS digital loudspeaker design method

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Granted publication date: 20170215

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