CN106028238A - Double-unit loudspeaker module, designing method thereof, and electronic equipment - Google Patents
Double-unit loudspeaker module, designing method thereof, and electronic equipment Download PDFInfo
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- CN106028238A CN106028238A CN201610533005.XA CN201610533005A CN106028238A CN 106028238 A CN106028238 A CN 106028238A CN 201610533005 A CN201610533005 A CN 201610533005A CN 106028238 A CN106028238 A CN 106028238A
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000178 monomer Substances 0.000 claims description 64
- 230000009977 dual effect Effects 0.000 claims description 37
- 238000009434 installation Methods 0.000 claims description 27
- 239000011358 absorbing material Substances 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000002902 bimodal effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only
- H04R1/24—Structural combinations of separate transducers or of two parts of the same transducer and responsive respectively to two or more frequency ranges
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
- H04R9/06—Loudspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
- H04R9/02—Details
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2400/00—Loudspeakers
- H04R2400/11—Aspects regarding the frame of loudspeaker transducers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Health & Medical Sciences (AREA)
- Otolaryngology (AREA)
- Details Of Audible-Bandwidth Transducers (AREA)
- Fittings On The Vehicle Exterior For Carrying Loads, And Devices For Holding Or Mounting Articles (AREA)
- Obtaining Desirable Characteristics In Audible-Bandwidth Transducers (AREA)
Abstract
The invention discloses a double-unit loudspeaker module, a designing method thereof, and electronic equipment. The module comprises a module casing, a retaining wall, and two identical loudspeaker units, wherein the module casing is provided with two mounting positions in one-to-one correspondence with the two loudspeaker units, two front chambers in one-to-one correspondence with the two loudspeaker units and separated from each other, and a general rear chamber; the retaining wall is fixedly mounted in the general rear chamber, and divides the general rear chamber into a first rear chamber and a second rear chamber which respectively correspond to the two loudspeaker units; the volume of the first rear chamber is larger than the volume of the second rear chamber, and the volume difference between the first rear chamber and the second rear chamber enables the difference between two resonant frequencies appearing in the double-unit loudspeaker module to be 30 Hz to 100 Hz. The module provided by the invention has the advantages of high sensitivity and low resonant frequencies.
Description
Technical field
The present invention relates to electro-acoustic product technical field, more particularly it relates to an dual MCU system is raised
Sound device module, form the method for designing of dual MCU system speaker module of particular resonant frequency and be provided with
The electronic equipment of this kind of dual MCU system speaker module.
Background technology
Along with electronic product makes rapid progress, updates, speaker module is gradually to light, thin, small and exquisite
Direction develop, but also the performances such as the sensitivity of speaker module, resonant frequency (F0) are proposed
Higher requirement, therefore, traditional speaker module with a loudspeaker monomer can not be expired
The requirements at the higher level that sound effect is proposed by foot, such as, it is thus achieved that higher sensitivity and relatively low resonant frequency.
In order to solve these problems, it is currently suggested the concept of dual MCU system module, therefore, how by double
The design of monomer module makes particular characteristic parameter reach target and has become as important research topic.
Summary of the invention
It is an object of the present invention to provide a kind of dual MCU system module being obtained in that relatively low resonant frequency
New technical scheme.
According to the first aspect of the invention, it is provided that a kind of dual MCU system speaker module, it includes module
Housing, barricade and two identical loudspeaker monomers；Described module casing is arranged to have and two
Loudspeaker monomer two installation sites one to one and a total back cavity；Said two speaker list
Body be arranged on in each self-corresponding installation site；Described barricade is fixedly mounted in described total back cavity,
Described total back cavity to be divided into the first back cavity and the correspondence second of corresponding first loudspeaker monomer
Second back cavity of loudspeaker monomer, wherein, the volume of described first back cavity is more than described second back cavity
Difference in volume between volume, and described first back cavity and described second back cavity makes described dual MCU system raise one's voice
Difference between two resonant frequencies that device module occurs is between 30Hz to 100Hz.
Optionally, the difference in volume between described first back cavity and described second back cavity makes described double single
Difference between two resonant frequencies that body speaker module occurs is between 50Hz to 80Hz.
Optionally, the percentage ratio of the volume that the volume of described first back cavity accounts for described total back cavity is less than
Or equal to 60%.
Optionally, during described barricade is adhesively fixed on described total back cavity.
Optionally, described barricade is made up of sound-absorbing material；Or, described barricade includes moulding body processed
And described in being bonded in, mould the sound-absorbing material on body processed.
Optionally, described barricade extends to neighbouring said two from the bottom up of described total back cavity
The position of installation site terminates, so that described first back cavity and described second back cavity are in neighbouring said two
The side of installation site communicates.
Optionally, the middle section mirror between described total back cavity has about said two installation site
As symmetrical structure.
Optionally, described barricade is parallel to the setting of described middle section.
According to the second aspect of the invention, it is provided that the method for designing of a kind of dual MCU system speaker module,
Comprising:
Choose two identical loudspeaker monomers；
Choosing the module casing matched with described loudspeaker monomer, wherein, described module casing has
With two loudspeaker monomers, two installation sites one to one and a total back cavity；
Divide equally described total back cavity according to two loudspeaker monomers and calculate described dual MCU system speaker module
Resonant frequency, as with reference to resonant frequency；
Set the first resonant frequency less than described with reference to resonant frequency；
According to the resonant frequency of described loudspeaker monomer, it is corresponding that calculating to obtain described first resonant frequency
Back cavity volume as target volume；
From the volume of described total back cavity, remove described target volume, obtain residual volume；
Resonant frequency according to described loudspeaker monomer and described residual volume, calculate the second resonant frequency；
Judge that whether the difference between described second resonant frequency and described first resonant frequency is at 30Hz
Between 100Hz, in this way, it is determined that described first resonant frequency is target resonance frequency, as no,
Then revise the first resonant frequency of setting；
Barricade is installed in described total back cavity, described total back cavity is divided into correspondence by barricade
First back cavity of first loudspeaker monomer and the second back cavity of corresponding second loudspeaker monomer, and institute
State the volume target volume equal to corresponding described target resonance frequency of the first back cavity.
According to the third aspect of the invention we, it is provided that a kind of electronic equipment, this electronic equipment is provided with root
According to the electronic equipment described in first aspect present invention.
One of the present invention has the beneficial effects that, dual MCU system speaker module of the present invention and method for designing thereof
By barricade, total back cavity of module casing carries out not waiting segmentation, so that what being closer to occurred in module
Two resonant frequencies (i.e. occurring that impedance is bimodal), such that can be in the feelings not affecting module performance
Reduce the resonant frequency of module under condition and improve intermediate frequency sensitivity.
By detailed description to the exemplary embodiment of the present invention referring to the drawings, its of the present invention
Its feature and advantage thereof will be made apparent from.
Accompanying drawing explanation
Combined in the description and the accompanying drawing of the part that constitutes description shows the reality of the present invention
Execute example, and together with its explanation for explaining the principle of the present invention.
Fig. 1 is the internal structure signal of a kind of embodiment according to dual MCU system speaker module of the present invention
Figure；
Fig. 2 is the decomposition texture schematic diagram of dual MCU system speaker module shown in Fig. 1；
Fig. 3 is the internal structure schematic diagram of the reference module of module shown in corresponding diagram 1；
Fig. 4 a is the sensitivity-frequency variation curve of module shown in Fig. 3；
Fig. 4 b is the impedance-frequency change curve of module shown in Fig. 3；
Fig. 5 a is the sensitivity-frequency variation curve of module shown in Fig. 1；
Fig. 5 b is the impedance-frequency change curve of module shown in Fig. 1；
Fig. 6 is the flow chart of a kind of embodiment of the method for designing according to module of the present invention.
Description of reference numerals:
1-module casing；1a-back cover；
1b-fore shell；101a, 101b-installation site；
The back cavity that 104-is total；104a-the first back cavity；
104b-the second back cavity；2a, 2b-loudspeaker monomer；
3-barricade.
Detailed description of the invention
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should also be noted that
Unless specifically stated otherwise, the parts that illustrate the most in these embodiments and step positioned opposite,
Numerical expression and numerical value do not limit the scope of the invention.
Description only actually at least one exemplary embodiment is illustrative below, never makees
For to the present invention and application thereof or any restriction of use.
May not beg in detail for technology, method and apparatus known to person of ordinary skill in the relevant
Opinion, but in the appropriate case, described technology, method and apparatus should be considered a part for description.
Shown here with in all examples discussed, any occurrence should be construed as merely example
Property rather than as limit.Therefore, other example of exemplary embodiment can have different
Value.
It should also be noted that similar label and letter represent similar terms, therefore, one in following accompanying drawing
A certain Xiang Yi the accompanying drawing of denier is defined, then need not it is carried out further in accompanying drawing subsequently
Discuss.
Fig. 1 is the knot of the internal structure of a kind of embodiment according to dual MCU system speaker module of the present invention
Structure schematic diagram.Fig. 2 is the decomposition texture schematic diagram of module shown in Fig. 1.
According to Fig. 1 and Fig. 2, the dual MCU system speaker module of the present invention include module casing 1,
Loudspeaker monomer 2a, 2b that barricade 3 is identical with two.
Module casing 1 be arranged to have installation site 101a corresponding with loudspeaker monomer 2a and
Installation site 101b that loudspeaker monomer 2b is corresponding and a total back cavity 104.
Loudspeaker monomer 2a is arranged in installation site 101a of correspondence, and loudspeaker monomer 2b installs
In corresponding installation site 101b.
Barricade 3 is fixedly mounted in total back cavity 104, so that total back cavity 104 to be divided into corresponding the
After the second of the first back cavity 104a of one loudspeaker monomer 2a and corresponding second loudspeaker monomer 2b
Chamber 104b, wherein, the volume of the first back cavity 104a is more than the volume 104b of the second back cavity, and first
Difference in volume between back cavity 104a and the second back cavity 104b makes dual MCU system speaker module have two
Difference between resonant frequency, and two resonant frequencies (includes 30Hz between 30Hz to 100Hz
And 100Hz), this difference can be limited between 50Hz to 80Hz (including 50Hz and 80Hz) further,
This resonant frequency is that low-frequency range resistance value reaches frequency corresponding during maximum.
First monomer module of this explanation composition dual MCU system speaker module is humorous with second comonomer module
Vibration frequency differs, and difference 30Hz to 100Hz therebetween, and wherein, the first monomer module is by the
One speaker 2a (there is independent ante-chamber) and the first back cavity 104a composition, second comonomer module
It is made up of second speaker 2b (there is independent ante-chamber) and the second back cavity 104b.
Resonant frequency F of monomer module0Computing formula be:
Wherein, FsFor forming the resonant frequency of the loudspeaker monomer of monomer module；Vb is monomer module
Back cavity volume；ρ0For atmospheric density, generally take 1.21Kg/m3；Sd is to form raising one's voice of monomer module
Effective radiating area (the m of device monomer2)；C is THE VELOCITY OF SOUND IN AIR, generally takes 344m/s；Mms is
The equivalent mass of vibrational system；Cms is the equivalent force of the support system of vibrational system.
As can be seen here, the resonant frequency of monomer module is can determine according to formula (1) and formula (2)
F0, back cavity volume Vb and the resonant frequency F of loudspeaker monomersRelation between three, and then total
In the case of the volume of back cavity 104 is certain, it is possible to obtain the first back cavity 104a and the second back cavity 104b
Volume so that the difference of two resonant frequencies of dual MCU system speaker module 30Hz to 100Hz it
Between.
If removing barricade 3, the most total back cavity 104 on the basis of dual MCU system speaker module of the present invention
Corresponding first speaker list will be virtually divided into according to installation site 101a and installation site 101b
The rear portion of body 2a and the rear portion of corresponding second loudspeaker monomer 2b, wherein, installation position
Put 101a and installation site 101b normal conditions about carrying out the virtual plane specular that divides,
This, be referred to as the dual MCU system speaker module removing barricade 3 with reference to module, and Fig. 3 shows this seed ginseng
Examine the internal structure schematic diagram of module.If total back cavity 104 is about this virtual plane specular
Or proximate mirror is symmetrical, then with reference to the first monomer module and the resonance frequency of second comonomer module of module
Rate is by equal, and the resonant frequency of this explanation reference module is by the resonance of two monomer modules equal to self
Frequency.
And for dual MCU system speaker module of the present invention, owing to total back cavity 104 is divided into by barricade 3
First back cavity 104a and the second back cavity 104b, and the volume of the first back cavity 104a is more than the second back cavity
The volume of 104b, therefore, in the case of loudspeaker monomer is identical, due to the first of module of the present invention
The back cavity volume of monomer module is more than the back cavity volume of above-mentioned the first monomer module with reference to module, therefore,
The former resonant frequency will be less than the resonant frequency of the latter, in like manner, due to the second list of module of the present invention
The back cavity volume of body module is less than the back cavity volume of the above-mentioned second comonomer module with reference to module, therefore,
The former resonant frequency will be above the resonant frequency of the latter, this illustrate module of the present invention will have two humorous
, i.e. there is impedance bimodal in vibration frequency.
Fig. 4 a is the above-mentioned curve changed with frequency with reference to the sensitivity of module (dividing equally total back cavity).
According to Fig. 4 a, the average of sensitivity 1-2KHz is 98.1dB.
Fig. 5 a is the curve that the sensitivity of module of the present invention changes with frequency.According to Fig. 5 a, spirit
The average of sensitivity 1-2KHz is promoted to 99.5dB, improves 1.4dB.
Fig. 4 b is the above-mentioned curve changed with frequency with reference to the impedance of module (dividing equally total back cavity).
According to Fig. 4 b, the resonant frequency of reference module is 610Hz.
Fig. 5 b is the curve that the impedance of module of the present invention changes with frequency.According to Fig. 5 b, this
The resonant frequency of bright module is 530Hz, reduces 80Hz.
According to Fig. 4 a, Fig. 4 b, Fig. 5 a and Fig. 5 b, the present invention utilizes that impedance is bimodal to be reduced
The resonant frequency of module, and improve the intermediate frequency sensitivity of module, simultaneously by making two resonance frequencies
Close to each other being overlapped of rate and the performance of module has been effectively ensured.Further, since module of the present invention with
The reference module of same size is compared and is improve intermediate frequency sensitivity, therefore, present invention, avoiding because of sensitive
Degree is not enough and expands monomer size, not only saves the inner space of module, additionally it is possible to meet module size
The least thinner requirement.
For the ease of realizing the first monomer module to module of the present invention and the resonance of second comonomer module
The restriction of the close degree of frequency, in one particular embodiment of the present invention, can be made by barricade 3
The percentage ratio of the volume that the volume obtaining the first back cavity 104a accounts for total back cavity 104 is less than or equal to 60%.
In one particular embodiment of the present invention, above-mentioned barricade 3 is adhesively fixed on total back cavity 104
In.In other embodiments of the invention, above-mentioned barricade 3 can also be by means such as ultrasonic bonding
It is fixedly connected in total back cavity.
In one particular embodiment of the present invention, this barricade 3 has sound-absorbing material composition, with can also
Enough regulate tonequality by barricade 3.It can be that barricade 3 is by sound-absorbing that this barricade 3 has sound-absorbing material composition
Material is made, it is also possible to be that barricade includes moulding body processed and being bonded in the sound-absorbing material etc. moulded on body processed.
This sound-absorbing material.
Sound-absorbing material according to its standard be defined as by 250,500, tetra-frequencies of 1K, 2K average
It is sound-absorbing material that the acoustic absorptivity material more than 0.2 is classified as.Sound-absorbing material is mostly loose porous material
Material, such as mineral wool, foam, silicon dioxide, zeolite, acoustical cotton etc..The sound absorbing mechanism of sound-absorbing material
It is the sound wave hole that gos deep into material, and hole mostly is the open pore that internal mutual connects, and is divided by air
Son friction and the effect of viscosity resistance, make fiber fines make mechanical vibration, so that acoustic energy is changed into heat
Energy.The acoustic absorptivity of this kind of porous sound-absorbing material is gradually increased the most from low to high, therefore to height
The sound absorbing effects of frequency and intermediate frequency is preferable.
In one particular embodiment of the present invention, seeing figures.1.and.2 shown, barricade 3 is from total
The bottom up of back cavity 104 extends to neighbouring two installation sites 101a, the position of 101b terminates, this
Illustrate barricade 3 by two loudspeaker monomers 2a, 2b, leave between the surface of back cavity 104
Gap, so that the first back cavity 104a and the second back cavity 104b is at neighbouring two installation sites 101a, 101b
Side communicate, this kind of structure makes two back cavities 104a, 104b can share total back cavity 104
Damping hole.
In one particular embodiment of the present invention, above-mentioned total back cavity has about two installation sites
Between the structure of the middle section virtual plane of module (ask for an interview with reference to) specular, this middle section
Being introduced for limiting the structure of total back cavity, it is an invisible virtual plane.Basis at this
On, in one particular embodiment of the present invention, this barricade 3 is parallel to this middle section and arranges.
For the ease of installing loudspeaker monomer 2a, 2b, in one particular embodiment of the present invention, ginseng
As shown in Figure 2, module casing 1 includes back cover 1a and fore shell 1b, wherein, two installation sites 2a,
2b is formed on fore shell 1b, and back cover 1a and fore shell 1b snaps together and forms total back cavity 104.After
After shell 1a and fore shell 1b snaps together, can be fixed together by means such as ultra-sonic welded.At this
On the basis of, barricade 3 can be arranged on fore shell 1b.
Present invention also offers a kind of electronic equipment, this electronic equipment e.g. mobile phone, panel computer,
MP4 etc., it is provided with the dual MCU system speaker module according to the present invention.
Present invention also offers the method for designing of a kind of dual MCU system speaker module, Fig. 6 shows this kind
A kind of flow chart of the embodiment of method for designing.
According to Fig. 6, this method for designing includes:
Step S601, chooses two identical loudspeaker monomers, two speaker lists of this description selection
Body has identical resonant frequency, performs step S602 afterwards.
Step S602, chooses the module casing matched with loudspeaker monomer, and wherein, module casing has
Have and two loudspeaker monomers, two installation sites one to one and two loudspeaker monomers one a pair
Should and two mutually isolated ante-chambers and a total back cavity, perform step S603 afterwards.
Step S603, according to above-mentioned formula (1) and formula (2), equal according to two loudspeaker monomers
Total back cavity is divided to calculate the resonant frequency of dual MCU system speaker module, as reference resonant frequency, afterwards
Perform step S604.
Step S604, sets the first resonant frequency and is less than with reference to resonant frequency, perform step S605 afterwards.
Step S605, according to the resonant frequency of loudspeaker monomer, according to above-mentioned formula (1) and formula
(2), calculate and to obtain back cavity volume corresponding to the first resonant frequency as target volume, perform afterwards
Step S606.
Step S606, removes target volume from the volume of total back cavity, obtains residual volume, it
Rear execution step S607.
Step S607, according to resonant frequency and the residual volume of loudspeaker monomer, utilizes formula (1)
Calculate the second resonant frequency with formula (2), perform step S608 afterwards.
Step S608, it is judged that whether the difference between the second resonant frequency and the first resonant frequency is at 30Hz
Between 100Hz, in this way, then perform step S609, as no, then return to the amendment of step S604 and set
The first fixed resonant frequency.
Step S609, determines that the first resonant frequency is target resonance frequency, performs step S410 afterwards.
Step S610, installs barricade in total back cavity, right to be divided into by total back cavity by barricade
Answer the first back cavity and second back cavity of corresponding second loudspeaker monomer of first loudspeaker monomer, and
The volume of the first back cavity is equal to the target volume of corresponding target resonance frequency.
In order to quickly determine the position of barricade, in one particular embodiment of the present invention, can be
In step S604, first set expection resonant frequency to be obtained as the first resonant frequency, if first
The first resonant frequency set meets the condition as target resonance frequency, the most i.e. can determine that the position of barricade
Put；If the first resonant frequency first set is unsatisfactory for the condition as target resonance frequency, the most again
The frequency fixed to set step pitch to increase, this step pitch e.g. 5-10Hz, first with amendment setting is humorous
Vibration frequency, till amended first resonant frequency meets as the condition of target resonance frequency,
So that designing the resonant frequency of the module obtained as close possible to target.
In one particular embodiment of the present invention, between total back cavity has about two installation sites
The structure of middle section specular, and barricade is arranged along the direction being parallel to middle section.
Each embodiment in this specification all uses the mode gone forward one by one to describe, phase between each embodiment
Part cross-reference as homophase, each embodiment stress with other embodiments
Difference, and each embodiment can be used alone as required or be combined with each other.
Although some specific embodiments of the present invention being described in detail by example, but
It should be appreciated by those skilled in the art, example above is merely to illustrate rather than in order to limit
The scope of the present invention processed.It should be appreciated by those skilled in the art, can be without departing from the scope of the present invention
In the case of spirit, above example is modified.The scope of the present invention is by claims
Limit.
Claims (10)
1. a dual MCU system speaker module, it is characterised in that include module casing (1), barricade
(3) with two identical loudspeaker monomers (2a, 2b)；Described module casing (1) is arranged to
Have and two loudspeaker monomers (2a, 2b), two installation sites (101a, 101b) one to one
And a total back cavity (104)；Said two loudspeaker monomer (2a, 2b) is arranged on the most right
In the installation site (101a, 101b) answered；Described barricade (3) is fixedly mounted on described total back cavity
(104) in, described total back cavity (104) to be divided into corresponding first loudspeaker monomer (2a)
The first back cavity (104a) and second back cavity (104b) of corresponding second loudspeaker monomer (2b),
Wherein, the volume of described first back cavity (104a) is more than the volume of described second back cavity (104b),
And the difference in volume between described first back cavity (104a) and described second back cavity (104b) makes described
Difference between two resonant frequencies that dual MCU system speaker module occurs is between 30Hz to 100Hz.
Dual MCU system speaker module the most according to claim 1, it is characterised in that described
Difference in volume between one back cavity (104a) and described second back cavity (104b) makes described dual MCU system raise
Difference between two resonant frequencies that sound device module occurs is between 50Hz to 80Hz.
Dual MCU system speaker module the most according to claim 1, it is characterised in that described
The volume of one back cavity (104a) accounts for the percentage ratio of the volume of described total back cavity less than or equal to 60%.
Dual MCU system speaker module the most according to claim 1, it is characterised in that described gear
Wall (3) is adhesively fixed in described total back cavity.
Dual MCU system speaker module the most according to claim 1, it is characterised in that described gear
Wall (3) is made up of sound-absorbing material；Or, described barricade (3) includes moulding body processed and being bonded in institute
State the sound-absorbing material moulded on body processed.
Dual MCU system speaker module the most according to claim 1, it is characterised in that described gear
Wall (3) extends to neighbouring said two installation site from the bottom up of described total back cavity (104)
The position of (101a, 101b) terminates, so that described first back cavity (104a) and described second back cavity
(104b) side in neighbouring said two installation site (101a, 101b) communicates.
Dual MCU system speaker module the most according to any one of claim 1 to 6, its feature
Be, described total back cavity (104) have about said two installation site (101a, 101b) it
Between the structure of middle section specular.
Dual MCU system speaker module the most according to claim 7, it is characterised in that described gear
Wall (3) is parallel to described middle section and arranges.
9. the method for designing of a dual MCU system speaker module, it is characterised in that including:
Choose two identical loudspeaker monomers (2a, 2b)；
Choose the module casing (1) matched with described loudspeaker monomer (2a, 2b), wherein,
Described module casing (1) has and two installations one to one of two loudspeaker monomers (2a, 2b)
Position (101a, 101b) and a total back cavity (104)；
Divide equally described total back cavity (104) according to two loudspeaker monomers (2a, 2b) and calculate described
The resonant frequency of dual MCU system speaker module, as with reference to resonant frequency；
Set the first resonant frequency less than described with reference to resonant frequency；
According to the resonant frequency of described loudspeaker monomer (2a, 2b), calculating to obtain described first humorous
Back cavity volume corresponding to vibration frequency is as target volume；
From the volume of described total back cavity (104), remove described target volume, obtain residual volume；
Resonant frequency according to described loudspeaker monomer (2a, 2b) and described residual volume, calculate the
Two resonant frequencies；
Judge that whether the difference between described second resonant frequency and described first resonant frequency is at 30Hz
Between 100Hz, in this way, it is determined that described first resonant frequency is target resonance frequency, as no,
Then revise the first resonant frequency of setting；
In described total back cavity install barricade (3), with by barricade (3) by described total back cavity
(104) first back cavity (104a) of corresponding first loudspeaker monomer (2a) and correspondence the it is divided into
Second back cavity (104b) of two loudspeaker monomers (2b), and described first back cavity (104a)
Volume is equal to the target volume of corresponding described target resonance frequency.
10. an electronic equipment, it is characterised in that be provided with according to any one of claim 1-8
Dual MCU system speaker module.
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| CN201610533005.XA CN106028238B (en) | 2016-07-07 | 2016-07-07 | Double-monomer loudspeaker module, design method thereof and electronic equipment |
| PCT/CN2016/110427 WO2018006552A1 (en) | 2016-07-07 | 2016-12-16 | Double-speaker unit module and design method thereof, and electronic device |
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| CN201610533005.XA CN106028238B (en) | 2016-07-07 | 2016-07-07 | Double-monomer loudspeaker module, design method thereof and electronic equipment |
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| CN106028238B CN106028238B (en) | 2021-05-18 |
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| WO2018006552A1 (en) * | 2016-07-07 | 2018-01-11 | 歌尔股份有限公司 | Double-speaker unit module and design method thereof, and electronic device |
| CN111432312A (en) * | 2019-01-09 | 2020-07-17 | 台湾立讯精密有限公司 | Thin speaker device |
| CN111756903A (en) * | 2020-07-01 | 2020-10-09 | 维沃移动通信有限公司 | Speaker assembly and electronic device |
| CN113490109A (en) * | 2021-07-06 | 2021-10-08 | 维沃移动通信有限公司 | Acoustic module and electronic equipment |
| CN113993031A (en) * | 2021-11-10 | 2022-01-28 | 歌尔光学科技有限公司 | Sound generating device, calibration method of sound generating device and sound generating unit |
| CN114007179A (en) * | 2021-09-24 | 2022-02-01 | 歌尔光学科技有限公司 | Loudspeaker module, electronic equipment and adjusting method for far-field noise elimination |
| CN114041294A (en) * | 2019-05-31 | 2022-02-11 | 哈曼国际工业有限公司 | Loudspeaker adapter and dual-core loudspeaker assembly |
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| CN112929769B (en) * | 2021-01-27 | 2022-06-28 | 歌尔科技有限公司 | Audio equipment and intelligent wearable equipment |
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Also Published As
| Publication number | Publication date |
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| WO2018006552A1 (en) | 2018-01-11 |
| CN106028238B (en) | 2021-05-18 |
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