CN205960420U - Narrow pulse semiconductor laser drive circuit - Google Patents
Narrow pulse semiconductor laser drive circuit Download PDFInfo
- Publication number
- CN205960420U CN205960420U CN201620948468.8U CN201620948468U CN205960420U CN 205960420 U CN205960420 U CN 205960420U CN 201620948468 U CN201620948468 U CN 201620948468U CN 205960420 U CN205960420 U CN 205960420U
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- electric capacity
- diode
- switch pipe
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000007493 shaping process Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 230000003321 amplification Effects 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- 230000005284 excitation Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 210000001367 artery Anatomy 0.000 description 4
- 210000003462 vein Anatomy 0.000 description 4
- 238000004146 energy storage Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Abstract
The utility model relates to a narrow pulse semiconductor laser drive circuit, including boost circuit, luminous circuit of semiconductor laser and switch tube drive circuit. Boost circuit is used for producing the luminous high pressure of excitation laser pipe, it is luminous that the luminous circuit of semiconductor laser is used for controlling the laser pipe, switch tube drive circuit is used for the amplification shaping external drive signal.
Description
Technical field
The utility model is related to a kind of laser drive circuit, and more particularly, to a kind of narrow-pulse semiconductor laser
Device drive circuit.
Background technology
Laser radar sensor is widely used in the industries such as traffic, medical treatment, manufacture, the range finding of laser radar sensor
Precision and can be scanned restricted by semiconductor laser device driving circuit performance.
Pulse driving circuit for semiconductor laser commonly used at present has the following disadvantages：For example structure is more complicated,
Input port is many, and versatility is low；Drive signal rising edge is big, and semiconductor laser power is low, lights unstable；Need outside carrying
For high voltage power supply, cause semiconductor laser drive module volume larger, be unfavorable for that multi-thread scanning small-sizeization is integrated etc..
Content of the invention
According to one side of the present utility model, there is provided a kind of narrow-pulse semiconductor laser drive circuit, including：
Booster circuit (101), including：External the first power supply (V1), voltage boosting pulse signal (TTLOUT1), the first inductance
(L1), first resistor (R1), the first diode (D1), the second diode (D2), the first electric capacity (C1) and first switch pipe (Q1),
One end of the input of wherein said booster circuit is connected with external the first power supply (V1), the other end and voltage boosting pulse signal
(TTLOUT1) it is connected, output end is connected with semiconductor laser illuminating circuit (102), send out for producing exciting laser pipe
The high pressure of light；
Semiconductor laser illuminating circuit (102), including：Discharge pulse signal (TTLOUT2), semiconductor laser
(LD), the 3rd diode (D3), second switch pipe (Q2), the second electric capacity (C2), the 3rd electric capacity (C3) and second resistance (R2), uses
Light in controlling laser tube；And
Switch tube driving circuit 103, comprises outside boost drive signals (TTLIN1), external discharge drive signal
(TTLIN2), external second source (V2), the 4th electric capacity (C4), the 5th electric capacity (C5), switch pipe driving chip (U1), boosting
Pulse signal (TTLOUT1) and discharge pulse signal (TTLOUT2), for amplifying shaping external drive signal.
Preferably, wherein said first power supply (V1) is connected with the first inductance (L1), and described first inductance (L1) is respectively
Be connected with the positive pole and first of the first diode (D1) pipe (Q1) that opens the light, the signal input part of described first switch pipe (Q1) with
Voltage boosting pulse signal (TTLOUT1) is connected, and described first electric capacity (C1) is booster circuit storage capacitor, and one end is grounded, another
End is connected with the second diode (D2), and described second diode (D2) act as rectification.
Preferably, wherein said 3rd diode (D3) and semiconductor laser (LD) reverse parallel connection, partly lead for eliminating
The reverse overshoot that body laser (LD) produces, extends LD service life；Described second switch pipe (Q2) can be triode or
It is field-effect transistor；Described second electric capacity (C2) be semiconductor laser illuminating circuit storage capacitor, its capacity be less than or
Equal to the capacity of the first electric capacity (C1), the second electric capacity (C2) one end connects second switch pipe (Q2), and the other end connects semiconductor and swashs
Light device (LD)；Described 3rd electric capacity (C3), for stopping direct current, prevents the long-time conducting of second switch pipe (Q2).
Preferably, wherein said switch tube driving circuit (103) output is respectively voltage boosting pulse signal (TTLOUT1) and puts
Electric impulse signal (TTLOUT2).
Preferably, wherein said external second source (V2) is used for switch tube driving chip (U1) power supply, described outer
Portion's boost drive signals (TTLIN1) are pulse TTL signal, for controlling first switch pipe (Q1) folding to produce high pressure, described
External discharge drive signal (TTLIN2) is pulse TTL signal, for controlling second switch pipe (Q2) folding to produce laser arteries and veins
Punching, and described outside boost drive signals (TTLIN1) are consistent with the frequency of external discharge drive signal (TTLIN2).
Preferably, wherein said switch pipe driving chip (U1) is used for amplifying the outside boost drive signals (TTLIN1) of shaping
With external discharge drive signal (TTLIN2).
The beneficial effects of the utility model are：
1. it has been internally integrated the high-pressure modular driving semiconductor laser, circuit is simple, solves existing semiconductor laser
Device pulse driving circuit volume is big, high cost, complex structure and other problems.
2. export stable, peak power is big, impulse response is rapid, and laser pulse width reaches 7ns, and repetition rate is in 1kHz-
Adjustable in 72kHz.
3. outside input two-way drive signal drives booster circuit and semiconductor laser illuminating circuit respectively, solves half
Conductor laser false triggering problem, stable luminescence, parameter is easy to adjust, and highly versatile is it is adaptable to multiple semiconductor laser.
Brief description
By reference to the following drawings, illustrative embodiments of the present utility model can be more fully understood by：
Fig. 1 is the structural representation of the narrow-pulse semiconductor laser drive circuit according to the utility model embodiment；
And
Fig. 2 is that in narrow-pulse semiconductor laser drive circuit according to utility model embodiment of the present invention, dipulse is driven
Storage capacitor boosting and discharge process oscillogram under dynamic signal (TTLOUT) effect.
Wherein, V1 is the first power supply, and V2 is second source, and L1 is the first inductance, and D1 is the first diode, and D2 is the two or two
Pole pipe, D3 is the 3rd diode, and Q1 is the first metal-oxide-semiconductor, and Q2 is the second metal-oxide-semiconductor, and C1 is the first electric capacity, and C2 is the second electric capacity, C3
It is the 3rd electric capacity, C4 is the 4th electric capacity, C5 is the 5th electric capacity, R1 is first resistor, and R2 is second resistance, and LD is semiconductor laser
Device, TTLIN1 is outside boost drive signals, and TTLIN2 is external discharge drive signal, and TTLOUT1 is voltage boosting pulse signal,
TTLOUT2 is discharge pulse signal, and U1 is switch drive chip.
Specific embodiment
With reference now to accompanying drawing, introduce illustrative embodiments of the present utility model, however, the utility model can be with many
Different forms is implementing, and is not limited to embodiment described herein, provides these embodiments to be in order at large and complete
Open the utility model entirely, and fully pass on scope of the present utility model to person of ordinary skill in the field.For
Term in the illustrative embodiments being illustrated in the accompanying drawings is not to restriction of the present utility model.In the accompanying drawings, identical
Cells/elements use identical reference.
Unless otherwise stated, term (inclusion scientific and technical terminology) used herein has to person of ordinary skill in the field
Common understand implication.Further it will be understood that the term being limited with the dictionary that is usually used is it should be understood to and it
The linguistic context of association area has consistent implication, and is not construed as Utopian or excessively formal meaning.
Fig. 1 is the structural representation of the narrow-pulse semiconductor laser drive circuit according to the utility model embodiment.
As shown in figure 1, wherein said narrow-pulse semiconductor laser drive circuit includes：Booster circuit 101, semiconductor laser light
Circuit 102 and switch tube driving circuit 103.
Booster circuit 101 includes：External the first power supply (V1), voltage boosting pulse signal (TTLOUT1), the first inductance
(L1), first resistor (R1), the first diode (D1), the second diode (D2), the first electric capacity (C1) and first switch pipe (Q1),
One end of the input of wherein said booster circuit is connected with external the first power supply (V1), the other end double arteries and veins with Laser Driven
Rush signal (TTLOUT) to be connected, output end is connected with the positive pole of semiconductor laser tube, light for producing exciting laser pipe
High pressure.Preferably, wherein said first power supply (V1) is connected with the first inductance (L1), described first inductance (L1 respectively with
First diode (D1's) positive pole and first pipe (Q1) that opens the light is connected, the signal input part of described first switch pipe (Q1) and liter
Pressure pulse signal (TTLOUT1) is connected, and described first electric capacity (C1) is booster circuit storage capacitor, and one end is grounded, the other end
It is connected with the second diode (D2), described second diode (D2) act as rectification.
Preferably, semiconductor laser illuminating circuit 102 includes：Semiconductor laser (LD), the 3rd diode (D3),
Two switching tubes (Q2), the second electric capacity (C2), the 3rd electric capacity (C3) and second resistance (R2), for controlling laser tube to light.
Preferably, wherein said 3rd diode (D3) and semiconductor laser (LD) reverse parallel connection, partly lead for eliminating
The reverse overshoot that body laser (LD) produces, extends LD service life；Described second switch pipe (Q2) can be triode or
It is field-effect transistor；Described second electric capacity (C2) be semiconductor laser illuminating circuit storage capacitor, its capacity be less than or
Equal to the capacity of the first electric capacity (C1), the second electric capacity (C2) one end connects second switch pipe (Q2), and the other end connects semiconductor and swashs
Light device (LD)；Described 3rd electric capacity (C3), for stopping direct current, prevents the long-time conducting of second switch pipe (Q2).
Preferably, switch tube driving circuit 103 comprises outside boost drive signals (TTLIN1), external discharge drive signal
(TTLIN2), external second source (V2), the 4th electric capacity (C4), the 5th electric capacity (C5) and switch pipe driving chip (U1), use
In amplification shaping external drive signal.
Preferably, wherein said switch tube driving circuit output is respectively voltage boosting pulse signal (TTLOUT1) and electric discharge arteries and veins
Rush signal (TTLOUT2).
Preferably, wherein said external second source (V2) is used for switch tube driving chip (U1) power supply, described outer
Portion's boost drive signals (TTLIN1) are pulse TTL signal, for controlling first switch pipe (Q1) folding to produce high pressure, described
External discharge drive signal (TTLIN2) is pulse TTL signal, for controlling second switch pipe (Q2) folding to produce laser arteries and veins
Punching, and described outside boost drive signals (TTLIN1) are consistent with the frequency of external discharge drive signal (TTLIN2).
Preferably, wherein said switch pipe driving chip (U1) is used for amplifying the outside boost drive signals (TTLIN1) of shaping
With external discharge drive signal (TTLIN2).
Outside boost drive signals (TTLIN1), after switch tube driving circuit shaping amplification, export voltage boosting pulse signal
(TTLOUT1)；Voltage boosting pulse signal (TTLOUT1) is applied to first switch pipe (Q1), and first switch pipe (Q1) turns on, external
First power supply (V1) discharges over the ground through the first inductance (L1), this process first inductance (L1) energy storage；Voltage boosting pulse signal
(TTLOUT1) after terminating, before discharge pulse signal (TTLOUT2) arrives, first switch pipe (Q1) turns off, and the first inductance (L1) is given
First electric capacity (C1) charges, and the first electric capacity (C1) charges to the second electric capacity (C2)；External discharge drive signal (TTLIN2) is through opening
After closing tube drive circuit shaping amplification, export discharge pulse signal (TTLOUT2)；Discharge pulse signal (TTLOUT2) is applied to
Second switch pipe (Q2), second open the light pipe (Q2) conducting, the second electric capacity (C2) produce high-voltage great-current pulse constitute electric discharge over the ground
Loop, heavy current pulse, through semiconductor luminotron (LD), makes it produce laser pulse；Discharge pulse signal (TTLOUT2) is tied
Shu Hou, second switch pipe (Q2) turns off, and waits new trigger pulse input.
For example, outside boost drive signals (TTLIN1) and external discharge drive signal (TTLIN2) frequency are all 20kHz,
Transistor-Transistor Logic level amplitude is 3.3V, 50 degree of advanced the latter of the former phase place, and the former pulsewidth is 9us, and the latter's pulsewidth is 50ns, the present embodiment
First switch pipe (Q1) and second switch pipe (Q2), all from N-channel MOS pipe, switch pipe driving chip (U1) and select binary channels
Metal-oxide-semiconductor grid drive chip, the first power supply V1=5V, second source V2=15V.Outside boost drive signals (TTLIN1) are through opening
After closing tube drive circuit shaping amplification, export voltage boosting pulse signal (TTLOUT1).Fig. 2 is to be implemented according to utility model of the present invention
In the narrow-pulse semiconductor laser drive circuit of mode the boosting of dipulse drive signal (TTLOUT) effect lower storage capacitor with
Discharge process oscillogram, as shown in Fig. 2 voltage boosting pulse signal (TTLOUT1) high level is applied to first through first resistor (R1)
The grid of switching tube (Q1), first switch pipe (Q1) turns on, and the first power supply (V1) discharges over the ground through the first inductance (L1), this process
First inductance (L1) energy storage, during voltage boosting pulse signal (TTLOUT1) low level, the first inductance (L1) is to the first electric capacity (C1) and
Two electric capacity (C2) charge, and HV_C2 boosts to 130V, complete the thermal energy storage process that boosts.External discharge drive signal (TTLIN2) is through opening
After closing tube drive circuit shaping amplification, export discharge pulse signal (TTLOUT2), discharge pulse signal (TTLOUT2) high level
It is applied to second switch pipe (Q2) grid, second switch pipe (Q2) conducting, the second electric capacity (C2) and semiconductor laser (LD) structure
Become discharge loop, the second electric capacity (C2) voltage rapidly goes to zero, electric discharge trailing edge is 4ns, produce heavy current pulse driving and partly lead
Body laser (LD) sends pulse laser.In the present embodiment, adjust outside boost drive signals (TTLIN1) and external discharge drives
The frequency of dynamic signal (TTLIN2) and pulsewidth, thus it is possible to vary the peak power of semiconductor laser (LD) and repetition rate.
The utility model is described by reference to a small amount of embodiment.However, known in those skilled in the art,
As subsidiary Patent right requirement is limited, except the utility model others disclosed above embodiments equally fall
In the range of the utility model.
Normally, all terms using in the claims are all solved in the usual implication of technical field according to them
Release, unless in addition clearly defined wherein.All of reference "/described/be somebody's turn to do [device, assembly etc.] " is all opened ground
It is construed at least one of described device, assembly etc. example, unless otherwise expressly specified.Any method disclosed herein
Step all need not be run with disclosed accurate order, unless explicitly stated otherwise.
Claims (6)
1. a kind of narrow-pulse semiconductor laser drive circuit is it is characterised in that described circuit includes：
Booster circuit (101), including：External the first power supply (V1), voltage boosting pulse signal (TTLOUT1), the first inductance (L1),
First resistor (R1), the first diode (D1), the second diode (D2), the first electric capacity (C1) and first switch pipe (Q1), wherein
One end of the input of described booster circuit is connected with external the first power supply (V1), the other end and voltage boosting pulse signal
(TTLOUT1) it is connected, output end is connected with semiconductor laser illuminating circuit (102), send out for producing exciting laser pipe
The high pressure of light；
Semiconductor laser illuminating circuit (102), including：Discharge pulse signal (TTLOUT2), semiconductor laser (LD),
Three diodes (D3), second switch pipe (Q2), the second electric capacity (C2), the 3rd electric capacity (C3) and second resistance (R2), for controlling
Laser tube lights；And switch tube driving circuit (103), including：Outside boost drive signals (TTLIN1), external discharge drive
Signal (TTLIN2), external second source (V2), the 4th electric capacity (C4), the 5th electric capacity (C5), switch pipe driving chip (U1),
Voltage boosting pulse signal (TTLOUT1) and discharge pulse signal (TTLOUT2), for amplifying shaping external drive signal.
2. a kind of narrow-pulse semiconductor laser drive circuit according to claim 1 is it is characterised in that described first is electric
Source (V1) is connected with the first inductance (L1) one end, and described first inductance (L1) other end is respectively with the first diode (D1) just
Pole is connected with first pipe (Q1) that opens the light, the signal input part of described first switch pipe (Q1) and voltage boosting pulse signal
(TTLOUT1) it is connected, the negative pole of described first diode (D1) is connected with the first electric capacity (C1) one end, described first electric capacity
(C1) it is booster circuit storage capacitor, the other end is connected and is grounded with first switch pipe (Q1), and described second diode (D2) is just
Pole is connected with the first diode (D1) negative pole, and described second diode (D2) act as rectification.
3. a kind of narrow-pulse semiconductor laser drive circuit according to claim 1 is it is characterised in that described second is electric
Hold (C2) one end to be connected with the second diode (D2) negative pole and second switch pipe (Q2), the other end and semiconductor laser (LD)
Negative pole and the 3rd diode (D3) positive pole are connected, and the 3rd diode (D3) negative pole is connected simultaneously with semiconductor laser (LD) positive pole
Ground connection, the 3rd diode (D3) is used for eliminating the reverse overshoot that semiconductor laser (LD) produces, and extends LD service life；Described
Second switch pipe (Q2) signal input part is connected with the 3rd electric capacity (C3) one end and second resistance (R2) one end, second switch pipe
(Q2) earth terminal is connected with second resistance (R2) other end and semiconductor laser (LD) positive pole and the 3rd diode (D3) negative pole
Connect；Described 3rd electric capacity (C3) other end is connected with discharge pulse signal (TTLOUT2), for stopping direct current, prevents second to open
Close the long-time conducting of pipe (Q2).
4. a kind of narrow-pulse semiconductor laser drive circuit according to claim 1 is it is characterised in that described switching tube
Drive circuit 103 output is respectively voltage boosting pulse signal (TTLOUT1) and discharge pulse signal (TTLOUT2).
5. a kind of narrow-pulse semiconductor laser drive circuit according to claim 1 is it is characterised in that described external
Second source (V2) is used for switch tube driving chip (U1) and powers, and described outside boost drive signals (TTLIN1) are pulse
TTL signal, is connected with the 4th electric capacity (C4) one end, for controlling first switch pipe (Q1) folding to produce high pressure, the 4th electric capacity
(C4) other end is connected with switch pipe driving chip (U1), and described external discharge drive signal (TTLIN2) is pulse TTL
Signal, is connected with the 5th electric capacity (C5) one end, for controlling second switch pipe (Q2) folding to produce laser pulse, the 5th electric capacity
(C5) other end is connected with switch pipe driving chip (U1), and described outside boost drive signals (TTLIN1) and external discharge drive
The frequency of dynamic signal (TTLIN2) is consistent.
6. a kind of narrow-pulse semiconductor laser drive circuit according to claim 1 is it is characterised in that described switching tube
Driving chip (U1) is used for amplifying the outside boost drive signals (TTLIN1) of shaping and external discharge drive signal (TTLIN2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620948468.8U CN205960420U (en) | 2016-08-26 | 2016-08-26 | Narrow pulse semiconductor laser drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620948468.8U CN205960420U (en) | 2016-08-26 | 2016-08-26 | Narrow pulse semiconductor laser drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205960420U true CN205960420U (en) | 2017-02-15 |
Family
ID=57979942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620948468.8U Active CN205960420U (en) | 2016-08-26 | 2016-08-26 | Narrow pulse semiconductor laser drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205960420U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108631151A (en) * | 2018-06-05 | 2018-10-09 | 成都楼兰科技有限公司 | Laser drive circuit |
| CN109378704A (en) * | 2017-03-23 | 2019-02-22 | 英飞凌科技股份有限公司 | For driving the circuit and method of laser diode |
| CN109728501A (en) * | 2019-03-14 | 2019-05-07 | 深圳市镭神智能系统有限公司 | A kind of driving circuit of laser, driving method and laser radar system |
-
2016
- 2016-08-26 CN CN201620948468.8U patent/CN205960420U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378704A (en) * | 2017-03-23 | 2019-02-22 | 英飞凌科技股份有限公司 | For driving the circuit and method of laser diode |
| CN109378704B (en) * | 2017-03-23 | 2020-11-03 | 英飞凌科技股份有限公司 | Circuit and method for driving laser diode |
| CN108631151A (en) * | 2018-06-05 | 2018-10-09 | 成都楼兰科技有限公司 | Laser drive circuit |
| CN109728501A (en) * | 2019-03-14 | 2019-05-07 | 深圳市镭神智能系统有限公司 | A kind of driving circuit of laser, driving method and laser radar system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20190229493A1 (en) | Circuit for Driving a Laser and Method Therefor | |
| CN205960420U (en) | Narrow pulse semiconductor laser drive circuit | |
| CN206412630U (en) | A kind of semiconductor laser device driving circuit of dipulse control | |
| CN109155587A (en) | DC-DC converter and control circuit | |
| CN106230258B (en) | The driving method and circuit and power-supply system of power switch tube | |
| CN209389446U (en) | A kind of semiconductor laser device driving circuit and laser radar | |
| CN104022776A (en) | Bootstrapping diode artificial circuit in half-bridge driving circuit | |
| CN103269161B (en) | Constant-current output BUCK power circuit | |
| CN106130378A (en) | Synchronous commutating control circuit and method | |
| CN205960421U (en) | Miniature narrow pulse semiconductor laser drive circuit | |
| CN105119505A (en) | Synchronous rectification control method and circuit | |
| CN107182148B (en) | DC-DC LED drive circuit based on PWM dimming | |
| CN204498094U (en) | The modulating pulse drive circuit of Connectors for Active Phased Array Radar T/R assembly | |
| CN201336631Y (en) | Time-delay shutdown circuit of power supply | |
| WO2018184234A1 (en) | Active pen, boost circuit, and control method therefor | |
| CN104185345B (en) | A kind of control device for constant current driver circuit for LED | |
| CN102103854B (en) | Energy converter transceiver circuit of ultrasonic aerovane | |
| CN201754562U (en) | Active clamp delay shutdown circuit | |
| CN205017636U (en) | A peak current detection circuitry for LED constant -current drive circuit | |
| CN205453478U (en) | IGBT closed loop initiative drive circuit | |
| CN203368305U (en) | Driving circuit of IGBT module power switch | |
| CN216216520U (en) | High-voltage power supply control system for synchronous rectification | |
| CN102790520A (en) | Bilateral soft start control method for bidirectional DC-DC (direct current-to-direct current) converter for new energy power generation systems | |
| CN106981981B (en) | A kind of the current-limited startup method and circuit of boost converter | |
| CN206041786U (en) | Drive circuit and electrical power generating system of switch tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231208 Address after: 430200, 7th floor, Building 3, Phase II, Modern Service Industry Demonstration Base, Huazhong University of Science and Technology Science Park, Guandong Street, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Wanji Photoelectric Technology Co.,Ltd. Address before: 100085 No. 5, building 1, East Road, Haidian District, Beijing, 601 Patentee before: BEIJING WANJI TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |