CN209389446U - A kind of semiconductor laser device driving circuit and laser radar - Google Patents
A kind of semiconductor laser device driving circuit and laser radar Download PDFInfo
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- CN209389446U CN209389446U CN201822148726.6U CN201822148726U CN209389446U CN 209389446 U CN209389446 U CN 209389446U CN 201822148726 U CN201822148726 U CN 201822148726U CN 209389446 U CN209389446 U CN 209389446U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000003990 capacitor Substances 0.000 claims abstract description 32
- 238000004146 energy storage Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 4
- 230000003760 hair shine Effects 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Abstract
The utility model discloses a kind of semiconductor laser device driving circuits, comprising: multichannel charging and energy-storage module, comprising: external high-voltage power supply, current-limiting resistance, rectifier diode, storage capacitor, for storing the luminous high pressure of exciting laser pipe；Laser emitting module, comprising: multiple semiconductor laser tubes, for generating laser pulse；Multi-path laser light emitting control module, comprising: NMOS, laser drive pulse signal shine for controlling the laser emitting module timesharing.
Description
Technical field
The utility model relates to a kind of semiconductor laser device driving circuits more particularly to a kind of multi-thread semiconductor of burst pulse to swash
Light device driving circuit.
Technical background
Laser radar is widely used in the industries such as traffic, medical treatment, it is even more unmanned in core technology, performance: survey
Away from ability and range accuracy, influenced to a certain extent by laser drive circuit.Mainly have currently on the market 8 lines, 16 lines,
32 lines, 64 lines etc., in following development, to improve its scanning accuracy, the line number of laser radar can be more and more, for laser
Transmitting module, it is meant that more and more laser tubes will be will use, this also has very big test to laser drive circuit.
The deficiency of multi-thread laser drive circuit generally existing at present mainly has: 1, circuit performance: due to laser peak
Power has certain requirement, when pulsewidth is reduced to a certain extent, can weaken peak power, but narrow spaces can be improved timing essence
Degree, so this is a contradiction, and larger pulsewidth is also unfavorable for improving laser repetition；2, miniaturization issues: outside Laser Driven
It is more to enclose circuit devcie, line number is more, and peripheral components are more, and it is integrated to be unfavorable for miniaturization.
Utility model content
The utility model provides a kind of semiconductor laser device driving circuit, can reduce laser arteries and veins in terms of circuit performance
Width is rushed, to improve accuracy of timekeeping；In miniaturization issues, using total high voltage style, and select special substance device to reach
Reduce circuit area.
The utility model circuit is accomplished by the following way, comprising:
The charging of the road N and energy-storage module, laser emitting module, the road N lasing fluorescence control module；
The road the N charging and energy-storage module, 64 >=N >=2, wherein again including: current-limiting resistance Ri, two poles of rectification in every road
Pipe Di, storage capacitor Ci；
Current-limiting resistance one end Ri is connected with the rectifier diode Di, the rectifier diode Di and the energy storage
Capacitor Ci is connected；
The other end of the current-limiting resistance Ri in every road is connected with each other, and is connected with external high pressure, the road N charge and
The energy-storage module is used to store the luminous high pressure of exciting laser pipe；
The laser emitting module, including N number of semiconductor laser tube, the anode of each semiconductor laser tube with it is described
Charging capacitor Ci in the charging of the road N and the energy-storage module is connected, for generating laser pulse；
The road the N lasing fluorescence control module, 64 >=N >=2, wherein including NMOS tube, laser drive pulse letter in every road
Number, the cathode of the NMOS tube Qi drain electrode semiconductor laser tube corresponding with the laser emitting module on every road is connected, the NMOS
Pipe Qi source electrode is connected to ground, and the NMOS tube Qi grid is connected with laser-driven signal；
The road the N lasing fluorescence control module shines for controlling the laser emitting module timesharing.
Preferably, the pin that the charging capacitor Ci is connected with semiconductor laser tube anode when carrying out PCB drafting to pair
The path distance for the semiconductor laser tube anode answered is less than 10mm；
The path distance of NMOS tube Qi drain electrode to the corresponding semiconductor laser tube cathode is less than 10mm；
The path distance of the grounding pin of the NMOS tube Qi source electrode and the charging capacitor Ci is less than 10mm.
Preferably, in the road N charging and energy-storage module, the storage capacitor Ci is NP0 or COG material capacitor；This two
The equivalent series resistance and equivalent series inductance of kind material capacitor are relatively small, suitable in the environment of high rate discharge, are used for
After NMOS tube Qi conducting, since the equivalent series resistance of the storage capacitor Ci is small, the maximum value meeting of electric current rising
Bigger, the equivalent series inductance of Yu Suoshu storage capacitor Ci is small, and the time that electric current rises to maximum value can be shorter.
Preferably, in the road N charging and energy-storage module, the capacitance of the storage capacitor Ci is 100pF-1nF；It is described
The capacitance of storage capacitor determines the width of laser pulse, and capacitance is about small, and laser pulse width is smaller.
Preferably, the laser emitting module is semiconductor laser tube array；Semiconductor laser tube array is conducive to reduce
Gap between laser tube, convenient for integrated in favor of circuit miniaturization.
Preferably, the NMOS tube Qi is gallium nitride metal-oxide-semiconductor；Drive the voltage and current of gallium nitride metal-oxide-semiconductor lower, and it is general
Metal-oxide-semiconductor need MOS driver, advantageously reduce the peripheral components of driving circuit, and the conducting internal resistance meeting of gallium nitride metal-oxide-semiconductor
It is smaller, be conducive to the pulse amplitude for improving laser.
On the other hand, the utility model additionally provides a kind of laser radar, including one kind described in above-mentioned any one half
Conductor laser driving circuit.
The utility model has the beneficial effects that:
1, it improves circuit performance: reducing laser pulse width under the premise of not reducing laser peak power, be conducive to mention
High laser radar range precision；Under the premise of not improving power supply power consumption, there is certain gain to the peak power of laser pulse
Effect.
2, realize circuit miniaturization: gallium nitride metal-oxide-semiconductor, do not need metal-oxide-semiconductor driver, and the volume of gallium nitride metal-oxide-semiconductor compared with
General metal-oxide-semiconductor is small, has very great help for circuit miniaturization.
Detailed description of the invention
By reference to the following drawings, the illustrative embodiments of the utility model can be more fully understood by:
Fig. 1 is the structural schematic diagram according to the burst pulse multi-line laser radar driving circuit of the utility model embodiment.
Wherein, 1 is external high voltage power supply for the charging of the road N and energy-storage module, VH, and be limited Ri (i=1,2,3 ..., n) galvanic electricity
Resistance, Di (i=1,2,3 ..., n) are rectifier diode, and Ci (i=1,2,3 ..., n) is storage capacitor, and 2 be Laser emission mould
Block, 3 be the road N lasing fluorescence control module, and Qi (i=1,2,3 ..., n) is NMOS tube.
Specific embodiment
The illustrative embodiments of the utility model are introduced referring now to the drawings, however, the utility model can use many
Different forms is implemented, and is not limited to the embodiment described herein, and to provide these embodiments be in order at large and complete
Open the utility model entirely, and the scope of the utility model is sufficiently conveyed to person of ordinary skill in the field.For
The term in illustrative embodiments being illustrated in the accompanying drawings not is the restriction to the utility model.In the accompanying drawings, identical
Cells/elements use identical appended drawing reference.
Unless otherwise indicated, term (including scientific and technical terminology) used herein has person of ordinary skill in the field
It is common to understand meaning.Further it will be understood that with the term that usually used dictionary limits, should be understood as and its
The context of related fields has consistent meaning, and is not construed as Utopian or too formal meaning.
Fig. 1 is the structural schematic diagram according to the burst pulse multi-line laser radar driving circuit of the utility model embodiment.
Wherein, 1 is the charging of the road N and energy-storage module, and VH is external high voltage power supply, and Ri (i=1,2,3 ..., n) is current-limiting resistance, Di (i
=1,2,3 ..., n) it is rectifier diode, Ci (i=1,2,3 ..., n) is storage capacitor, and 2 be laser emitting module, and 3 be the road N
LD light emitting control module, Qi (i=1,2,3 ..., n) are NMOS tube.
External high voltage power supply VH is connected with per current-limiting resistance Ri all the way, and current-limiting resistance Ri is connected with rectifier diode Di
It connects, rectifier diode Di is connected with storage capacitor Ci, and the storage capacitor Ci other end is connected to ground, every in laser emitting module
The anode of a laser tube is connected with the storage capacitor on every road, and cathode is connected with the NMOS tube Qi on every road drain electrode, NMOS tube Qi
Source electrode is connected to ground, and NMOS tube Qi grid is connected with laser-driven signal.
Preferably, the pin that the charging capacitor Ci and semiconductor laser tube anode are connected is to corresponding semiconductor laser tube
The path distance of anode is 2mm；
The path distance of NMOS tube Qi drain electrode to the corresponding semiconductor laser tube cathode is 2mm；
The path distance of the grounding pin of the NMOS tube Qi source electrode and the charging capacitor Ci is 2mm.
Preferably, in the road N charging and energy-storage module 1, the storage capacitor Ci is the high pressure NP0 material of TDK production
Capacitor, the equivalent series inductance of capacitor are 0.42nH, and equivalent series resistance is 0.0653 Ω.
Preferably, in the road N charging and energy-storage module 1, the capacitance of the storage capacitor Ci is 400pF, final output
Half pulsewidth of laser pulse be 3.5ns.
Preferably, in the road N charging and energy-storage module 1, the external high-voltage power supply VH is 130V, cooperates the energy storage electricity
Hold the 400pF capacitance of Ci, the laser pulse peaks power of final output is 60W.
Preferably, the laser emitting module 2 is semiconductor laser tube array.
Preferably, the NMOS tube Qi is gallium nitride metal-oxide-semiconductor；Gallium nitride MOS is driven to need lower driving voltage and electricity
Stream, and general metal-oxide-semiconductor needs MOS driver, advantageously reduces the peripheral components of driving circuit, and gallium nitride metal-oxide-semiconductor
Internal resistance is connected can be smaller, is conducive to the pulse amplitude for improving laser.
The utility model additionally provides a kind of laser radar, drives including a kind of semiconductor laser described in above-described embodiment
Dynamic circuit.
The utility model is described by reference to a small amount of embodiment.However, it is known in those skilled in the art,
As defined by subsidiary Patent right requirement, in addition to the utility model other embodiments disclosed above are equally fallen in
In the scope of the utility model.
Normally, all terms used in the claims are all solved according to them in the common meaning of technical field
It releases, unless in addition clearly being defined wherein.All references " one/described/be somebody's turn to do [device, component etc.] " are all opened
Ground is construed at least one example in described device, component etc., unless otherwise expressly specified.Any method disclosed herein
The step of need not all be run with disclosed accurate sequence, unless explicitly stated otherwise.
Claims (7)
1. a kind of semiconductor laser device driving circuit, which is characterized in that
Including the charging of the road N and energy-storage module, laser emitting module, the road N lasing fluorescence control module；
The road N charging and energy-storage module, 64 >=N >=2, wherein include: again in every road current-limiting resistance Ri, rectifier diode Di,
Storage capacitor Ci；
Current-limiting resistance one end Ri is connected with the rectifier diode Di, the rectifier diode Di and the storage capacitor
Ci is connected；
The other end of the current-limiting resistance Ri in every road is connected with each other, and is connected with external high pressure, and the road N is charged and described
Energy-storage module is used to store the luminous high pressure of exciting laser pipe；
The laser emitting module, including N number of semiconductor laser tube, the anode of each semiconductor laser tube and the road N
Charging capacitor Ci in charging and the energy-storage module is connected, for generating laser pulse；
The road the N lasing fluorescence control module, 64 >=N >=2, wherein including NMOS tube, laser drive pulse signal in every road, often
The cathode of the NMOS tube Qi drain electrode semiconductor laser tube corresponding with the laser emitting module on road is connected, the source the NMOS tube Qi
Pole is connected to ground, and the NMOS tube Qi grid is connected with laser-driven signal；
The road the N lasing fluorescence control module shines for controlling the laser emitting module timesharing.
2. a kind of semiconductor laser device driving circuit according to claim 1, which is characterized in that
The pin that the charging capacitor Ci is connected with semiconductor laser tube anode when carrying out PCB drafting swashs to corresponding semiconductor
The path distance of light pipe anode is less than 10mm；
The path distance of NMOS tube Qi drain electrode to the corresponding semiconductor laser tube cathode is less than 10mm；
The path distance of the grounding pin of the NMOS tube Qi source electrode and the charging capacitor Ci is less than 10mm.
3. a kind of semiconductor laser device driving circuit according to claim 1, it is characterised in that the road the N charging and energy storage
Module, the storage capacitor are NP0 or COG material capacitor.
4. a kind of semiconductor laser device driving circuit according to claim 1, it is characterised in that the road the N charging and energy storage
Module, the storage capacitor capacitance are 100pF-1nF.
5. a kind of semiconductor laser device driving circuit according to claim 1, it is characterised in that the laser emitting module
For laser array.
6. a kind of semiconductor laser device driving circuit according to claim 1, it is characterised in that the NMOS tube is nitridation
Gallium metal-oxide-semiconductor.
7. a kind of laser radar, it is characterised in that including a kind of semiconductor laser drive as claimed in any one of claims 1 to 6
Dynamic circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822148726.6U CN209389446U (en) | 2018-12-20 | 2018-12-20 | A kind of semiconductor laser device driving circuit and laser radar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822148726.6U CN209389446U (en) | 2018-12-20 | 2018-12-20 | A kind of semiconductor laser device driving circuit and laser radar |
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| Publication Number | Publication Date |
|---|---|
| CN209389446U true CN209389446U (en) | 2019-09-13 |
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| CN201822148726.6U Active CN209389446U (en) | 2018-12-20 | 2018-12-20 | A kind of semiconductor laser device driving circuit and laser radar |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110736975A (en) * | 2019-11-07 | 2020-01-31 | 上海禾赛光电科技有限公司 | Receiving module and laser radar comprising same |
| WO2020142949A1 (en) * | 2019-01-09 | 2020-07-16 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| CN111682399A (en) * | 2020-06-20 | 2020-09-18 | 深圳市灵明光子科技有限公司 | Laser transmitter driving circuit, system and high-speed optical communication device |
| WO2022042548A1 (en) * | 2020-08-24 | 2022-03-03 | 上海禾赛科技有限公司 | Power source unit, transmission apparatus comprising same, and control method therefor |
| CN114859324A (en) * | 2022-07-05 | 2022-08-05 | 天津光电集团有限公司 | Utilize TVS's laser radar transmission and detection circuitry |
-
2018
- 2018-12-20 CN CN201822148726.6U patent/CN209389446U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020142949A1 (en) * | 2019-01-09 | 2020-07-16 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| CN111868553A (en) * | 2019-01-09 | 2020-10-30 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| CN110736975A (en) * | 2019-11-07 | 2020-01-31 | 上海禾赛光电科技有限公司 | Receiving module and laser radar comprising same |
| CN110736975B (en) * | 2019-11-07 | 2020-11-27 | 上海禾赛光电科技有限公司 | Receiving module and laser radar comprising same |
| CN111682399A (en) * | 2020-06-20 | 2020-09-18 | 深圳市灵明光子科技有限公司 | Laser transmitter driving circuit, system and high-speed optical communication device |
| WO2022042548A1 (en) * | 2020-08-24 | 2022-03-03 | 上海禾赛科技有限公司 | Power source unit, transmission apparatus comprising same, and control method therefor |
| CN114859324A (en) * | 2022-07-05 | 2022-08-05 | 天津光电集团有限公司 | Utilize TVS's laser radar transmission and detection circuitry |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231213 Address after: 430200, 7th floor, Building 3, Phase II, Modern Service Industry Demonstration Base, Huazhong University of Science and Technology Science Park, Guandong Street, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Wanji Photoelectric Technology Co.,Ltd. Address before: Wanji space, building 12, Zhongguancun Software Park, yard 8, Dongbei Wangxi Road, Haidian District, Beijing 100193 Patentee before: BEIJING WANJI TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right |