CN205960012U - Emitting diode with electric current extended capability - Google Patents
Emitting diode with electric current extended capability Download PDFInfo
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- CN205960012U CN205960012U CN201620840091.4U CN201620840091U CN205960012U CN 205960012 U CN205960012 U CN 205960012U CN 201620840091 U CN201620840091 U CN 201620840091U CN 205960012 U CN205960012 U CN 205960012U
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- nitride layer
- emitting diode
- light emitting
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- 229910002601 GaN Inorganic materials 0.000 claims abstract description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 21
- 150000004767 nitrides Chemical class 0.000 claims description 69
- 229910052738 indium Inorganic materials 0.000 claims description 23
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
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Abstract
The utility model belongs to the technical field of the semiconductor, especially, relate to an emitting diode with electric current extended capability, the utility model discloses is the substituting high temperature P who has the structure now of superlattice structure high, the low resistance form formed on indium nitride layer with P type gallium nitride layer NOT AND mixes the inhomogeneous phenomenon of current distribution in the active layer is improved on gaN layer and then play the effect that improves the electric current extension, improves emitting diode's internal quantum efficiency.
Description
Technical field
This utility model belongs to technical field of semiconductors, more particularly, to a kind of light-emitting diodes with current expansion ability
Pipe.
Background technology
LED is limited to the impact of its brightness at present, leads to it to apply the cost above in illumination to compare traditional lighting device
Higher always, thus affecting the speed of its popularization.Because the hole concentration in P layer is subject to doping efficiency in GaN for the Mg and ionization
The impact of efficiency, the doping content of P layer Mg and hole concentration are difficult to higher level, lead to the hole amount injecting active area
Less, and skewness, in last 3 ~ 5 SQWs, the distribution therefore how improving hole is equal for main integrated distribution
Even property and its migration rate are the popular domains studied.
Content of the invention
Therefore, the utility model proposes a kind of light emitting diode with current expansion ability, at least include a substrate, and
Be sequentially located at N-type layer on described substrate, active layer, electronic barrier layer, the first p-type nitride layer, the second p-type nitride layer and
P-type contact layer it is characterised in that：Described second p-type nitride layer is by periodically alternately laminated nitride indium layer and p-type gallium nitride
Layer composition.
Additionally, this utility model also provides a kind of light emitting diode with current expansion ability, it at least includes a lining
Bottom, and it is sequentially located at N-type layer on described substrate, active layer, electronic barrier layer, the first p-type nitride layer, the second p-type nitridation
Nitride layer and p-type contact layer it is characterised in that：Described second p-type nitride layer by periodically alternately laminated aluminiferous nitride layer,
Nitride indium layer and p-type gallium nitride layer composition.
Preferably, the periodicity of described second p-type nitride layer is 2 ~ 10.
Preferably, described first p-type nitride layer is low temperature p-type GaN.
Preferably, the thickness of described nitride indium layer is 5 ~ 10.
Preferably, the thickness of described p-type gallium nitride layer is 40 ~ 60.
Preferably, described aluminiferous nitride layer is undoped nitride layer.
Preferably, described nitride indium layer is undoped nitride layer.
Preferably, described electronic barrier layer is AlGaN/GaN superlattice structure.
Preferably, described nitride indium layer is located between described aluminiferous nitride layer and described p-type gallium nitride layer.
Brief description
Accompanying drawing is used for providing further understanding to of the present utility model, and constitutes a part for description, with this practicality
New embodiment is used for explaining this utility model together, does not constitute to restriction of the present utility model.Additionally, accompanying drawing data is
Description summary, is not drawn to scale.
Fig. 1 is the light emitting diode construction schematic diagram of this utility model embodiment 1.
Fig. 2 is the light emitting diode construction schematic diagram of this utility model embodiment 2.
Accompanying drawing marks：100：Substrate；200：Cushion；300：N-type layer；400：Active layer；500：Electronic barrier layer；600：
First p-type nitride layer；700：Second p-type nitride layer；710：Nitride indium layer；720：P-type gallium nitride layer；730：Containing aluminum nitridation
Nitride layer；800：P-type contact layer.
Specific embodiment
With reference to the accompanying drawings and examples specific embodiment of the present utility model is described in detail.
Embodiment 1
As shown in Figure 1, the utility model proposes a kind of light emitting diode with current expansion ability, it at least wraps
Include a substrate 100, and be sequentially located at N-type layer 300 on described substrate 100, active layer 400, electronic barrier layer 500, the first p-type
Nitride layer 600, the second p-type nitride layer 700 and p-type contact layer 800；Wherein, the material of described substrate 100 is selected from blue treasured
Any one in stone, SiC, Si, GaAs or GaN, the present embodiment preferably employs the patterned substrate 100 of sapphire preparation,
Meanwhile, for reducing the lattice mismatch between Sapphire Substrate 100 and N-type layer 300, deposit a cushion prior on substrate 100
200, then deposited n-type layer 300 on cushion 200；The GaN adulterating for Mg in the first p-type nitride layer 600 of growing up, for subtracting
Few destruction to active layer 400 for the high temperature, it makes the low temperature using 700 ~ 950 DEG C in growth, and it adopts alternating temperature to grow, specifically
For its growth temperature gradually rises near active layer 400 side to the second p-type nitride layer 700 side；Electronic barrier layer
500 is AlGaN/GaN superlattice structure, for stopping excessively migrating of N-type layer 300 electronics；Described second p-type nitride layer 700
Including periodically alternately laminated nitride indium layer 710 and p-type gallium nitride layer 720.
In the present embodiment, when growing the second p-type nitride layer 700, grow first on the first p-type nitride layer 600
Thickness is 5 ~ 10 nitride indium layer 710, and it is non-doped layer, and on nitride indium layer 710, growth thickness is 40 ~ 60 P
Type gallium nitride layer 720, then circulates stratification superlattice structure successively according to this order, and its circulating cycle issue is 2 ~ 10, this
Embodiment preferred thickness be 5 nitride indium layer 710 be 40 with thickness alternately laminated 5 period-producers of p-type gallium nitride layer 720
Second p-type nitride layer 700.This utility model is formed using the relatively low nitride indium layer of resistance value 710 and p-type gallium nitride layer 720
Superlattice structure, on the one hand while reducing by the second p-type nitride layer 700 resistance, using p-type gallium nitride layer 720 and nitridation
The low-resistance characteristic of height of indium layer 710 composition, promotes resistance to carry out extending transversely, improves the ability extending transversely of electric current.
Embodiment 2
The present embodiment provides a kind of light emitting diode with current expansion ability, and it at least includes a substrate 100, and according to
Secondary N-type layer 300 on substrate 100, active layer 400, electronic barrier layer 500, the first p-type nitride layer 600, the second p-type
Nitride layer 700 and p-type contact layer 800；Wherein, the material of described substrate 100 is selected from sapphire, SiC, Si, GaAs or GaN
In any one, the present embodiment preferably employ sapphire preparation patterned substrate 100, meanwhile, for reduce Sapphire Substrate
Lattice mismatch between 100 and N-type layer 300 is prior to depositing a cushion 200 on substrate 100, then heavy on cushion 200
Long-pending N-type layer 300；The GaN adulterating for Mg in the first p-type nitride layer 600 of growing up, for reducing the destruction to active layer 400 for the high temperature,
It makes the low temperature using 700 ~ 950 DEG C in growth, and its growth temperature is from close active layer 400 side to the second p-type nitride
Layer 700 side gradually rise；Electronic barrier layer 500 is AlGaN/GaN superlattice structure, for stopping the mistake of N-type layer 300 electronics
Migration.
The second p-type nitride layer 700 of the present embodiment is with the difference of the second p-type nitride layer 700 of embodiment 1,
It is made up of periodically alternately laminated aluminiferous nitride layer 730, nitride indium layer 710 and p-type gallium nitride layer 720；Especially, nitrogen
Change indium layer 710 to be located between aluminiferous nitride layer 730 and p-type gallium nitride layer 720, preferably nitride indium layer 710 is located at containing aluminum nitridation
In nitride layer 730, p-type gallium nitride layer 720 is located on nitride indium layer 710, and forms superlattice structure with this periodic cycle；Its
In, the thickness of nitride indium layer 710 is 5 ~ 10, and the thickness of p-type gallium nitride layer 720 is 40 ~ 60, the second p-type nitride layer 700
Periodicity be 2 ~ 10.Due to adding nitride indium layer 710 can reduce the energy barrier of AlGaN, simultaneously because its low resistive can
It is beneficial to the extension in hole, improve hole mobility；Wherein, aluminiferous nitride layer 730 is AlN layer or the AlGaN of undoped
Layer, preferably u-AlGaN layer, because the energy barrier of AlGaN is high compared with gallium nitride, the hole that therefore p-type gallium nitride layer 720 provides
Need that there is just can pass through compared with kinetic energy when by u-AlGaN layer, serve and filter out the work with kinetic energy hole
With, improve the migration rate of high energy holes, improve because hole migration speed is slower in prior art, and the electronics-sky leading to
Phenomenon in last 3 ~ 5 SQWs for the main integrated distribution of effective recombination radiation in cave, improves the interior SQW efficiency of LED.
On the other hand, unadulterated aluminiferous nitride layer 730 has higher electronics, further increases the extended capability of electric current, has
Help improve uniformity of luminance and antistatic effect.
Claims (10)
1. a kind of light emitting diode with current expansion ability, at least includes a substrate, and is sequentially located at the N on described substrate
Type layer, active layer, electronic barrier layer, the first p-type nitride layer, the second p-type nitride layer and p-type contact layer it is characterised in that：
Described second p-type nitride layer is made up of periodically alternately laminated nitride indium layer and p-type gallium nitride layer.
2. a kind of light emitting diode with current expansion ability, at least includes a substrate, and is sequentially located at the N on described substrate
Type layer, active layer, electronic barrier layer, the first p-type nitride layer, the second p-type nitride layer and p-type contact layer it is characterised in that：
Described second p-type nitride layer is made up of periodically alternately laminated aluminiferous nitride layer, nitride indium layer and p-type gallium nitride layer.
3. a kind of light emitting diode with current expansion ability according to claim 1 and 2 it is characterised in that：Described
The periodicity of the second p-type nitride layer is 2 ~ 10.
4. a kind of light emitting diode with current expansion ability according to claim 1 and 2 it is characterised in that：Described
The thickness of nitride indium layer is 5 ~ 10.
5. a kind of light emitting diode with current expansion ability according to claim 1 and 2 it is characterised in that：Described P
The thickness of type gallium nitride layer is 40 ~ 60.
6. a kind of light emitting diode with current expansion ability according to claim 2 it is characterised in that：Described containing aluminum
Nitride layer is undoped nitride layer.
7. a kind of light emitting diode with current expansion ability according to claim 2 it is characterised in that：Described nitridation
Indium layer is located between described aluminiferous nitride layer and described p-type gallium nitride layer.
8. a kind of light emitting diode with current expansion ability according to claim 1 and 2 it is characterised in that：Described
Nitride indium layer is undoped nitride layer.
9. a kind of light emitting diode with current expansion ability according to claim 1 and 2 it is characterised in that：Described
Electronic barrier layer is AlGaN/GaN superlattice structure.
10. a kind of light emitting diode with current expansion ability according to claim 1 and 2 it is characterised in that：Described
First p-type nitride layer is low temperature p-type GaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620840091.4U CN205960012U (en) | 2016-08-05 | 2016-08-05 | Emitting diode with electric current extended capability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620840091.4U CN205960012U (en) | 2016-08-05 | 2016-08-05 | Emitting diode with electric current extended capability |
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| CN205960012U true CN205960012U (en) | 2017-02-15 |
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| CN201620840091.4U Active CN205960012U (en) | 2016-08-05 | 2016-08-05 | Emitting diode with electric current extended capability |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731970A (en) * | 2017-10-24 | 2018-02-23 | 江门市奥伦德光电有限公司 | A kind of preparation method of the LED epitaxial structure with current barrier layer |
| CN108666398A (en) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | A kind of LED epitaxial structure and its growing method |
| WO2019024501A1 (en) * | 2017-07-31 | 2019-02-07 | 厦门三安光电有限公司 | Semiconductor light emitting element and preparation method therefor |
| CN109346581A (en) * | 2018-08-14 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN111769187A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip structure |
| CN115863502A (en) * | 2023-02-21 | 2023-03-28 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
-
2016
- 2016-08-05 CN CN201620840091.4U patent/CN205960012U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666398A (en) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | A kind of LED epitaxial structure and its growing method |
| WO2019024501A1 (en) * | 2017-07-31 | 2019-02-07 | 厦门三安光电有限公司 | Semiconductor light emitting element and preparation method therefor |
| CN107731970A (en) * | 2017-10-24 | 2018-02-23 | 江门市奥伦德光电有限公司 | A kind of preparation method of the LED epitaxial structure with current barrier layer |
| CN109346581A (en) * | 2018-08-14 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN111769187A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip structure |
| CN115863502A (en) * | 2023-02-21 | 2023-03-28 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN115863502B (en) * | 2023-02-21 | 2024-03-19 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
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