CN205959991U - Heterojunction solar cell - Google Patents
Heterojunction solar cell Download PDFInfo
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- CN205959991U CN205959991U CN201620790076.3U CN201620790076U CN205959991U CN 205959991 U CN205959991 U CN 205959991U CN 201620790076 U CN201620790076 U CN 201620790076U CN 205959991 U CN205959991 U CN 205959991U
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- silicon chip
- type silicon
- amorphous silicon
- heterojunction solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a heterojunction solar cell, it includes: N type silicon chip, the sensitive surface of N type silicon chip is the nanostructured matte, and the face of being shaded is surface polishing, be equipped with the passivation layer, subtract the layer of turning over according to the preface on the sensitive surface of N type silicon chip, the part of the N type silicon chip face of being shaded be equipped with a plurality of N+ back of the body place be equipped with transparent conduction film layer, metal electrode on the N+ back of the body place, another part of the N type silicon chip face of being shaded is equipped with a plurality of intrinsic amorphous silicon layer, be equipped with P type projecting pole amorphous silicon layer, transparent conduction film layer, metal electrode on the intrinsic amorphous silicon layer, the N+ back of the body place of the N type silicon chip face of being shaded and with intrinsic amorphous silicon layer between through the insulation trench isolation. The utility model discloses the effectual reflection of light that has reduced has increased the light absorption to make short -circuit current have great promotion, reduced series resistance, improved the fill factor of battery.
Description
Technical field
The utility model is related to crystal silicon solar energy battery field, more particularly, to a kind of heterojunction solar battery.
Background technology
At present, high performance solar batteries are focuses of numerous photovoltaic manufacturers research, including PERC battery, MWT battery,
IBC battery and HIT battery etc..Wherein HIT battery is obtained with advantages such as its Efficient Conversion efficiency, low temperature process, suitable sheets
Obtain the special favor of numerous mechanisms and manufacturing enterprise, research and development enthusiasm can be in any more always.
Wherein HIT battery adopts N-type silicon chip, and alkaline making herbs into wool forms pyramid matte, this layer of non-crystalline silicon of double-sided deposition, doping
Non-crystalline silicon and transparent conductive film layer, form passivation layer, back surface field, emitter stage, and conductive layer, finally printing or plated metal shape
Become electrode.It is relatively more with reflected light that the shortcoming of this technology is that sensitive surface metal blocks, and limits carrying further of short circuit current
Rise.In addition, if gate electrode line adopts fine rule or reduces quantity, series resistance can be increased, lead to the loss of fill factor, curve factor.
So battery conversion efficiency is limited by short circuit current and fill factor, curve factor equilibrating imitating it is impossible to reach more efficient opto-electronic conversion
Rate.
Utility model content
The purpose of this utility model there is provided a kind of heterojunction solar battery, and it effectively reduces the reflection of light,
Increased the absorption of light, so that short circuit current has larger lifting, reduce series resistance, improve the filling of battery because
Son.
For solving to realize above-mentioned purpose, the utility model employs the following technical solutions：
The utility model provides a kind of heterojunction solar battery, and it includes：N-type silicon chip, the light of described N-type silicon chip
Face is nanostructured matte, and shady face is surface polishing；Passivation layer, anti-reflection layer are sequentially provided with the sensitive surface of N-type silicon chip；N-type
The local of silicon chip shady face is provided with multiple N+ back surface field areas, described N+ back surface field area and is provided with transparent conductive film layer, metal electrode；N
Another local of type silicon chip shady face is provided with multiple intrinsic amorphous silicon layer, and it is non-that described intrinsic amorphous silicon layer is provided with p-type emitter stage
Crystal silicon layer, transparent conductive film layer, metal electrode；The N+ back surface field area of N-type silicon chip shady face and logical and intrinsic amorphous silicon layer between
Cross insulated trench isolation.
Preferably, the reflectivity of the sensitive surface of described N-type silicon chip is less than 5%.
Preferably, described passivation layer is silica membrane, and thickness is 0.1-10nm.
Preferably, described antireflective film is silicon nitride, and thickness is 60-100nm.
Preferably, described intrinsic amorphous silicon layer thickness is 1-20nm, and p-type emitter stage amorphous silicon layer thickness is 1-30nm.
Preferably, described transparent conductive film layer is tin indium oxide or zinc oxide, and thickness is 60-120nm.
Preferably, described metal electrode is silver electrode.
The utility model adopts above technical scheme, and by being surface polishing using shady face, sensitive surface is nanostructured
The N-type silicon chip of matte, the matte of nanostructured, reflectivity is extremely low, and reflectivity, below 5%, effectively reduces the reflection of light；
The metal electrode of sensitive surface is accomplished cell backside simultaneously, decrease and block, increased the absorption of light, so that short circuit current has
Larger lifting.Additionally, the gross area metal contact that the back side is formed, it is effectively increased the contact area of metal semiconductor, fall
Low series resistance, improves the fill factor, curve factor of battery.
Brief description
Below in conjunction with the accompanying drawings the utility model is further described
Fig. 1 is a kind of the utility model heterojunction solar battery schematic diagram.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to the utility model.It should be appreciated that specific embodiment described herein is only in order to explain
The utility model, is not used to limit the utility model.
As shown in figure 1, the utility model discloses a kind of heterojunction solar battery, N-type silicon chip 1, described N-type silicon chip 1
Sensitive surface be nanostructured matte, shady face be surface polishing；
Passivation layer 2, anti-reflection layer 3 are sequentially provided with the sensitive surface of N-type silicon chip 1；
The local of N-type silicon chip 1 shady face is sequentially provided with N+ back surface field area 4, transparent conductive film layer 5, metal electrode 6；
Another local of N-type silicon chip 1 shady face is sequentially provided with intrinsic amorphous silicon layer 7, p-type emitter stage amorphous silicon layer 8, transparent
Conductive membrane layer 9, metal electrode 10；
The N+ back surface field area 4 of N-type silicon chip 1 shady face and being isolated by insulated trench 11 and intrinsic amorphous silicon layer 7 between.
Wherein, the shady face of described N-type silicon chip 1 can adopt alkalescence or acid solution etch polishing is formed；Sensitive surface
The nanostructured matte that can be formed using laser ablation, plasma etching or chemical etching, reflectivity is extremely low, and reflectivity exists
Less than 5%.Described alkaline solution is one kind of NaOH or KOH solution；Acid solution is HF acid and HNO3The mixed solution of acid.Institute
Stating passivation layer 2 is silica membrane, and thickness is 0.1-10nm；Described antireflective film 3 is silicon nitride, and thickness is 60-100nm；Institute
State the back surface field that shady face N+ back surface field area 4 can pass through ion implanting using mask method or be diffused in specific region formation；Described
Layer amorphous silicon layer 7 and p-type emitter stage amorphous silicon layer 8 are to be formed using CVD low temperature depositing, and this layer of amorphous silicon layer 7 thickness is 1-
20nm, p-type emitter stage amorphous silicon layer 8 thickness is 1-30nm；Described transparent conductive film layer 5,9 is tin indium oxide or zinc oxide
One kind, thickness is 60-120nm；Described metal electrode 10 is silver electrode, and it can be by printing, sputtering or electric plating method shape
Become；Described insulated trench 11 can be formed using chemical attack or laser grooving and scribing.
The utility model employs the N-type silicon chip of the matte of nanostructured, effectively reduces the reflection of light；Sensitive surface
Metal electrode accomplish the back side, decrease and block, increased the absorption of light, so that short circuit current has larger lifting.Additionally,
The gross area metal contact that the back side is formed, is effectively increased Metals-semiconductor contacts area, reduces series resistance, improve
The fill factor, curve factor of battery.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all this
Any modification, equivalent and improvement made within the spirit of utility model and principle etc., should be included in the utility model
Protection domain within.
Claims (7)
1. a kind of heterojunction solar battery is it is characterised in that include：
N-type silicon chip, the sensitive surface of described N-type silicon chip is nanostructured matte, and shady face is surface polishing；
Passivation layer, anti-reflection layer are sequentially provided with the sensitive surface of N-type silicon chip；
The local of N-type silicon chip shady face is provided with multiple N+ back surface field areas, described N+ back surface field area and is provided with transparent conductive film layer, metal
Electrode；
Another local of N-type silicon chip shady face is provided with multiple intrinsic amorphous silicon layer, and described intrinsic amorphous silicon layer is provided with p-type transmitting
Pole amorphous silicon layer, transparent conductive film layer, metal electrode；
Isolated by insulated trench between the N+ back surface field area of N-type silicon chip shady face and intrinsic amorphous silicon layer.
2. a kind of heterojunction solar battery according to claim 1 it is characterised in that：The sensitive surface of described N-type silicon chip
Reflectivity be less than 5%.
3. a kind of heterojunction solar battery according to claim 1 it is characterised in that：Described passivation layer is silica
Film, thickness is 0.1-10nm.
4. a kind of heterojunction solar battery according to claim 1 it is characterised in that：Described antireflective film is silicon nitride,
Thickness is 60-100nm.
5. a kind of heterojunction solar battery according to claim 1 it is characterised in that：Described intrinsic amorphous silicon layer thickness
For 1-20nm, p-type emitter stage amorphous silicon layer thickness is 1-30nm.
6. a kind of heterojunction solar battery according to claim 1 it is characterised in that：Described transparent conductive film layer is
Tin indium oxide or zinc oxide, thickness is 60-120nm.
7. a kind of heterojunction solar battery according to claim 1 it is characterised in that：Described metal electrode is silver electricity
Pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620790076.3U CN205959991U (en) | 2016-07-26 | 2016-07-26 | Heterojunction solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620790076.3U CN205959991U (en) | 2016-07-26 | 2016-07-26 | Heterojunction solar cell |
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| CN205959991U true CN205959991U (en) | 2017-02-15 |
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| CN201620790076.3U Active CN205959991U (en) | 2016-07-26 | 2016-07-26 | Heterojunction solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461554A (en) * | 2018-01-29 | 2018-08-28 | 君泰创新（北京）科技有限公司 | Full back-contact heterojunction solar battery and preparation method thereof |
-
2016
- 2016-07-26 CN CN201620790076.3U patent/CN205959991U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461554A (en) * | 2018-01-29 | 2018-08-28 | 君泰创新（北京）科技有限公司 | Full back-contact heterojunction solar battery and preparation method thereof |
| WO2019144611A1 (en) * | 2018-01-29 | 2019-08-01 | 君泰创新（北京）科技有限公司 | Heterojunction solar cell and preparation method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211130 Address after: No.17, Quanyuan Road, Jinjiang Economic Development Zone (wuliyuan), Quanzhou City, Fujian Province, 362000 Patentee after: FUJIAN JINSHI ENERGY Co.,Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: GS-SOLAR (FU JIAN) Co.,Ltd. |
|
| TR01 | Transfer of patent right |