CN205907397U - Graphite crucible that liquid phase method growth cement foaming machine used - Google Patents
Graphite crucible that liquid phase method growth cement foaming machine used Download PDFInfo
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- CN205907397U CN205907397U CN201620650536.2U CN201620650536U CN205907397U CN 205907397 U CN205907397 U CN 205907397U CN 201620650536 U CN201620650536 U CN 201620650536U CN 205907397 U CN205907397 U CN 205907397U
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Abstract
The utility model discloses a graphite crucible that liquid phase method growth cement foaming machine used belongs to carborundum production facility technical field. It includes crucible body (3), crucible cover (1) of lid on crucible body (3), its characterized in that: be equipped with one annular (2) along the setting of crucible body inside wall circumference corresponding to the gap department between crucible body (3) and crucible cover (1) on the inside wall of crucible body (3) upper end, annular (2) opening upwards, the interior side of annular (2) seals with crucible body's (3) inside wall to be connected, and the gap between crucible body (3) and crucible cover (1) lies in in annular (2). The utility model discloses simple structure can prevent effectively that the silicon steam in the crucible from spilling over from the gap of graphite crucible and crucible cover department, can improve the life of the outer heat preservation of crucible greatly, is favorable to reduction in production cost.
Description
Technical field
The utility model is related to the graphite crucible that a kind of liquid phase method grows carborundum crystals, belongs to carborundum production equipment
Technical field.
Background technology
Existing liquid phase method grows carborundum crystals, is all to be melted silicon in high purity graphite crucible by way of heating
Change, form solution in silicon for the carbon, then extend in solution by the graphite shaft that head attaches seed crystal and grown.Graphite earthenware
Crucible is open by design, and periphery is enclosed with insulation material.At the top of crucible, have a certain size perforate, be easy to seed shaft from
It extend into above crucible in the solution in crucible, the size of perforate is determined by the crystal being grown.The size of growth crystal is bigger,
Crucible size used is bigger, and the diameter of perforate is also bigger.
Under the condition of high temperature, the silicon of melting occurs the phenomenon of volatilization.Steam silicon runs into cold object, will condense into silica flour
Particle.If silicon steam runs into graphite piece or graphite insulation material, small silicon-carbide particle can be generated with carbon.In graphite earthenware
Crucible top, temperature is relatively low, and the volatilization of silicon steam can generate little silicon-carbide particle at graphite crucible top, these particles some
Can be attached on graphite crucible, the meeting also having is dropped back in crucible again with the disturbance of atmosphere.Understand crucible when occurring dropping
In phenomenon when, stray crystal can be formed in the solution, along with the flowing of solution, can lead to mix polycrystalline in the monocrystalline growing,
So that whole crystal cannot be used.
When silicon steam passes through the gap of the perforate of crucible top or crucible and crucible cover, when escaping from crucible, can be in crucible
Outer insulation material internal crystallization, grows little silicon-carbide particle, and general crystal formation is 3c-sic.These newly-generated carborundum
Grain, has the characteristic of carborundum, i.e. high-termal conductivity.These little silicon-carbide particles can lead to the heat-insulating property of insulation material to deteriorate,
With the growth of crystal, heat-insulating property is gradually lost.
High-purity insulation material is expensive, the service life of silicon steam volatilization meeting serious curtailment insulation material, leads to grow
Brilliant cost increases.So during long crystalline substance, the volatilization of suppression silicon steam, is problem very urgently to be solved.
Utility model content
For the above-mentioned problems in the prior art, the utility model provides one kind and grows silicon carbide whisker in liquid phase method
It is prevented from the graphite crucible that silicon steam overflows at the gap of graphite crucible and crucible cover in body, the guarantor of crucible can be effectively improved
The life-span of warm layer.
For achieving the above object, the utility model be the technical scheme is that a kind of liquid phase method growth carborundum crystals
Graphite crucible, including crucible body, cover crucible cover in crucible body upper end it is characterised in that: in described crucible body upper end
Correspond on madial wall and be provided with one along the circumferentially disposed annular groove of crucible body madial wall, institute at the gap between crucible body and crucible cover
State annular groove opening upwards, the inner side edge of described annular groove is connected with the madial wall closing of crucible body, between crucible body and crucible cover
Gap is located in described annular groove.
In the utility model, at growth carborundum crystals gap between corresponding crucible body and crucible cover in crucible body
Set annular groove can in carborundum production process stop crucible in silicon steam at the gap of graphite crucible and crucible cover
Overflow graphite crucible, prevent the silicon steam overflowing from so that the heat-insulating property of the insulation material in outside is deteriorated.
Further, it is placed with high purity graphite in described annular groove.By placing high purity graphite in annular groove, silicon steam is permissible
Here is reacted with the high purity graphite in groove, generates silicon-carbide particle, prevents silicon steam further from graphite crucible and crucible
Graphite crucible is overflowed at the gap of lid.
For preventing silicon steam from overflowing graphite crucible at the gap of graphite crucible and crucible cover further, outside described annular groove
Side upper concordant with the gap between crucible body and crucible cover or higher than this gap along height.
Pass in and out crucible for ease of seed shaft, described outer side edges of annular groove straight with diameter greater than the perforate on crucible cover
Footpath.
The beneficial effects of the utility model are: the utility model structure passes through corresponding crucible body and crucible cover in crucible body
Between gap at setting annular groove can effectively stop that the silicon steam in crucible overflows stone at the gap of graphite crucible and crucible cover
Black crucible, prevents the silicon steam overflowing from so that the heat-insulating property of the insulation material in outside is deteriorated；By placing high-purity stone in annular groove
Ink, can make silicon steam be reacted with the high purity graphite in groove in annular groove, generate silicon-carbide particle, prevent silicon steam further
Graphite crucible is overflowed at the gap of graphite crucible and crucible cover.The utility model structure is simple, by simple structure design,
Can effectively prevent the silicon steam in crucible from overflowing from the gap of graphite crucible and crucible cover, can greatly improve outside crucible
The service life of heat-insulation layer, advantageously reduces production cost.
Brief description
Fig. 1 is structural representation of the present utility model；
In figure: 1 be crucible cover, 2 be annular groove, 3 is crucible body, and 4 is heat-insulation layer.
Specific embodiment
Below by specific embodiment and combine accompanying drawing the utility model is further described.
As shown in figure 1, a kind of liquid phase method grows the graphite crucible of carborundum crystals, including crucible body 3, cover in crucible body
The crucible cover 1 of 3 upper ends, crucible cover 1 has perforate, corresponds to crucible body 3 and crucible on the madial wall of described crucible body 3 upper end
It is provided with one along the circumferentially disposed annular groove 2 of crucible body madial wall at gap between lid 1, described annular groove 2 opening upwards, annular groove 2
Inner side edge is connected with the madial wall closing of crucible body 3, and the outer side edges of annular groove 2, base, the madial wall of crucible body are collectively forming bottom
Closing, the groove of opening upwards, the gap between crucible body 3 and crucible cover 1 is located in described annular groove 2.
Preferably, the outer side edges of described annular groove 2 is upper flat along at the gap between height and crucible body 3 and crucible cover 1
Together or higher than this gap.The diameter with diameter greater than the perforate on crucible cover 1 of the described outer side edges of annular groove 2.
It is placed with high purity graphite in described annular groove 2.
Other parts in the present embodiment adopt prior art, will not be described here.
Claims (4)
1. a kind of liquid phase method grows the graphite crucible of carborundum crystals, including crucible body (3), covers in crucible body (3) upper end
Crucible cover (1) it is characterised in that: crucible body (3) and crucible cover (1) are corresponded on the madial wall of described crucible body (3) upper end
Between gap at be provided with one along the circumferentially disposed annular groove (2) of crucible body madial wall, described annular groove (2) opening upwards, described ring
The inner side edge of groove (2) is connected with the madial wall closing of crucible body (3), and the gap between crucible body (3) and crucible cover (1) is located at institute
State in annular groove (2).
2. liquid phase method according to claim 1 grow carborundum crystals graphite crucible it is characterised in that: described annular groove
(2) it is placed with high purity graphite in.
3. liquid phase method according to claim 1 grow carborundum crystals graphite crucible it is characterised in that: described annular groove
(2) outer side edges upper concordant with the gap between crucible body (3) and crucible cover (1) or higher than this gap along height.
4. liquid phase method according to claim 1 or 2 or 3 grow carborundum crystals graphite crucible it is characterised in that: institute
The diameter with diameter greater than the perforate on crucible cover (1) of the outer side edges of annular groove (2) stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620650536.2U CN205907397U (en) | 2016-06-24 | 2016-06-24 | Graphite crucible that liquid phase method growth cement foaming machine used |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620650536.2U CN205907397U (en) | 2016-06-24 | 2016-06-24 | Graphite crucible that liquid phase method growth cement foaming machine used |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205907397U true CN205907397U (en) | 2017-01-25 |
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ID=57812683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620650536.2U Active CN205907397U (en) | 2016-06-24 | 2016-06-24 | Graphite crucible that liquid phase method growth cement foaming machine used |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205907397U (en) |
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2016
- 2016-06-24 CN CN201620650536.2U patent/CN205907397U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | "change of name, title or address" | ||
| CP03 | "change of name, title or address" |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: Room 1106-6-01, block AB, Century Fortune Center, west side of Xinyu Road, high tech Zone, Jinan City, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |