CN205883204U - Protection circuit of high -speed buffer - Google Patents
Protection circuit of high -speed buffer Download PDFInfo
- Publication number
- CN205883204U CN205883204U CN201620764990.0U CN201620764990U CN205883204U CN 205883204 U CN205883204 U CN 205883204U CN 201620764990 U CN201620764990 U CN 201620764990U CN 205883204 U CN205883204 U CN 205883204U
- Authority
- CN
- China
- Prior art keywords
- circuit
- source
- input
- current path
- operating point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a protection circuit of high -speed buffer, it includes that the operating point establishs detection circuitry, the operating point protection circuit, electrical detection circuitry on many powers, clamp circuit, first main current path switch, second owner current path switch, detection circuitry's input and input service point connection are establish to the operating point, the operating point is establish detection circuitry's output and is connected with the input of operating point protection circuit and the first end of first main current path switch respectively, the output of operating point protection circuit, the second end and MOS pipe M1's the drain electrode of first main current path switch are connected, the first end of first main current path switch still is connected with a mains voltage, MOS pipe M1's grid and input service point connection. Before can guaranteeing high -speed buffer the electricity being accomplished before establish to accomplish the operating point and on many powers, its source can not exceed withstand voltage scope along with each port of MOSFET pipe is withstand voltage.
Description
Technical field
This utility model relates to the protection circuit of a kind of high-speed buffer.
Background technology
Owing to high-speed AD converter (abbreviation high-speed ADC) is when carrying out sampling/keeping switching, corresponding input impedance is poor
Away from relatively big, this gap will cause when switching, and high-speed ADC carries out temporary impact to outside passive impedance matching network, punching
Hit intensity is directly related with input signal, ultimately causes high-speed ADC and connected its on same impedance matching network
The performance of his transducer or signal processor produces bigger decline.
In order to solve the problems referred to above, introduce high-speed buffer, be used for isolating ADC kernel and external passive impedance matching net
Network.For high performance high-speed buffer, it is good that design requires that it both must have in the input signal swing range specified
Isolation, must have the most again high bandwidth to help it will impact in specifying the sampling time when driving ADC kernel
The error brought is down to minimum.Along with the progress of integrated circuit technology, the MOSFET of less technique live width can be used to same
Time meet the requirement in terms of the two, but the MOSFET of less technique live width also has unavoidable problem, that is, lower
Pressure, when use this MOSFET time, it is necessary to make it be operated in the pressure scope that can bear.But at many Power Management Designs
Time, owing to the power-up speeds of different electrical power can not be accomplished completely the same, even under same power domain, building of normal working point
Standing and be likely to have long process, without protection circuit, MOSFET will bear beyond bearing model in power up
The voltage difference enclosed and cause damaging.
Utility model content
Mesh power up of the present utility model is set up due to operating point and many power supply electrifyings Time Inconsistency is caused
MOSFET beyond the deficiency of pressure scope, it is provided that the protection circuit of a kind of high-speed buffer.
The purpose of this utility model is achieved through the following technical solutions: the protection circuit of a kind of high-speed buffer,
It includes that testing circuit, operating point protection circuit, many power supply electrifyings testing circuit, clamp circuit, the first main electricity are set up in operating point
Circulation flow path switch, the second main current path switch, operating point is set up the input of testing circuit and is connected with input service point, works
Point set up the outfan of testing circuit respectively with the of the input of operating point protection circuit and the first main current path switch
One end connects, and the drain electrode of the outfan of operating point protection circuit, the second end of the first main current path switch and the first metal-oxide-semiconductor is even
Connecing, the first end of the first main current path switch is also connected with the first supply voltage, the grid of the first metal-oxide-semiconductor and input service point
Connecting, the source electrode of the first metal-oxide-semiconductor is connected with the first end of the outfan of clamp circuit, the second main current path switch, and second is main
Second end ground connection of current path switch;The input of described many power supply electrifyings testing circuit and the first supply voltage and second
Supply voltage connects, the outfan of many power supply electrifyings testing circuit and the first end of the second main current path switch, clamp circuit
Input connect.
Described protection circuit also include the first biasing circuit, the second biasing circuit, the 3rd biasing circuit, load circuit and
First current source;First end of the first main current path switch is connected by the first biasing circuit and the first supply voltage, and first
The source electrode of metal-oxide-semiconductor is connected by the first end of the second biasing circuit and the second main current path switch, and the second main current path is opened
The second end and the first current source connection closed, the other end ground connection of the first current source, the source electrode of the first metal-oxide-semiconductor also with load circuit
Connecting, the input of load circuit is connected with second source voltage, and the input of the 3rd biasing circuit is connected with input service point.
Described operating point is set up testing circuit and is included comparator, the first input end input predeterminated voltage of comparator, the
Two inputs connect input service point, and the first end of the outfan of comparator and the 3rd switch connects, the output of comparator simultaneously
The first end also by switching with the first main current path after a phase inverter is held to be connected.
Described operating point protection circuit include the second current source, source with PMOSFET pipe and the 3rd switch, source with
The grid of PMOSFET pipe is connected with the second input of comparator, and source is with the source electrode of PMOSFET pipe and the first end of the 3rd switch
Connecting with the second current source, the other end of the second current source and the first supply voltage connect, and source connects with the drain electrode of PMOSFET pipe
Ground, the second end of the 3rd switch and the second end of the second main current path switch connect.
Described many power supply electrifyings testing circuit include the first resistance, the second resistance, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and or
Not gate, the grid of the 3rd metal-oxide-semiconductor is connected with second source voltage, source ground, drain with the first resistance, nor gate first defeated
Entering end to connect, the other end of the first resistance and the first supply voltage connect;The grid of the 4th metal-oxide-semiconductor and the first supply voltage are even
Connecing, source ground, drain electrode is connected with the second input of the second resistance, nor gate, the other end of the second resistance and second source
Voltage connects.
The beneficial effects of the utility model are: this utility model provides a kind of high-speed buffer protection circuit, and it includes
The protection scheme of following two different situations in reply circuit work, makes in circuit the MOSFET of minimum feature in both states
Under will not be owing to damaging beyond pressure scope.
1., when the operating point of high-speed buffer has been not set up, protection MOSFET avoids it to exceed pressure scope;
2., when using many Power Management Designs, when many power supplys have the most all powered on, protection MOSFET avoids it to exceed
Pressure scope.
Accompanying drawing explanation
Fig. 1 is the protection circuit structure chart of high-speed buffer;
Fig. 2 is that testing circuit is set up in operating point and protection circuit structure chart is set up in operating point;
Fig. 3 many power supply electrifyings testing circuit structure chart.
Detailed description of the invention
The technical solution of the utility model is described in further detail below in conjunction with the accompanying drawings, but protection domain of the present utility model
It is not limited to the following stated.
As it is shown in figure 1, the protection circuit of a kind of high-speed buffer, it includes that testing circuit is set up in operating point, operating point is protected
Protection circuit, many power supply electrifyings testing circuit, clamp circuit, the first main current path switch SW1, the second main current path switch
SW2, operating point sets up the input of testing circuit and is connected with input service point, and the outfan of testing circuit is set up respectively in operating point
It is connected with the input of operating point protection circuit and first end of the first main current path switch SW1, operating point protection circuit
Outfan, the drain electrode connection of the second end and the first metal-oxide-semiconductor M1 of the first main current path switch SW1, the first main current path
First end of switch SW1 is also connected with the first supply voltage VDD1, and the grid of the first metal-oxide-semiconductor M1 is connected with input service point, the
The source electrode of one metal-oxide-semiconductor M1 is connected with the first end of the outfan of clamp circuit, the second main current path switch SW2, the second main electricity
The second end ground connection of circulation flow path switch SW2;The input of described many power supply electrifyings testing circuit and the first supply voltage VDD1
Connecting with second source voltage VDD2, the outfan of many power supply electrifyings testing circuit and the second main current path switch the of SW2
One end, the input of clamp circuit connect.
Described protection circuit also include the first biasing circuit, the second biasing circuit, the 3rd biasing circuit, load circuit and
First current source idc1;First end of the first main current path switch SW1 is by the first biasing circuit and the first supply voltage
VDD1 connects, and the source electrode of the first metal-oxide-semiconductor M1 is by first end of the second biasing circuit and the second main current path switch SW2 even
Connecing, the second end and the first current source idc1 of the second main current path switch SW2 connect, another termination of the first current source idc1
Ground, the source electrode of the first metal-oxide-semiconductor M1 is also connected with load circuit, and the input of load circuit is connected with second source voltage VDD2,
The input of the 3rd biasing circuit is connected with input service point.
As in figure 2 it is shown, testing circuit is set up in described operating point includes comparator CMP, the first input end of comparator CMP
Input predeterminated voltage V1, the second input connects input service point, the outfan of comparator CMP and the first of the 3rd switch SW3
End connects, and the outfan of comparator CMP switchs first end of SW1 also by after a phase inverter with the first main current path simultaneously
Connect.
Described operating point protection circuit includes that the second current source idc2, source are with PMOSFET pipe M2 and the 3rd switch
SW3, source is connected with second input of comparator CMP with the grid of PMOSFET pipe M2, source with PMOSFET pipe M2 source electrode with
First end and the second current source idc2 of the 3rd switch SW3 connect, the other end of the second current source idc2 and the first supply voltage
VDD1 connects, and source is with the grounded drain of PMOSFET pipe M2, second end of the 3rd switch SW3 and the second main current path switch SW2
Second end connect.
As it is shown on figure 3, described many power supply electrifyings testing circuit includes the first resistance R0, the second resistance R1, the 3rd metal-oxide-semiconductor
M3, the 4th metal-oxide-semiconductor M4 and nor gate NOR1, the grid of the 3rd metal-oxide-semiconductor M3 is connected with second source voltage VDD2, source ground,
Drain electrode is connected with the first resistance R0, the first input end of nor gate NOR1, the other end of the first resistance R0 and the first supply voltage
VDD1 connects;The grid of the 4th metal-oxide-semiconductor M4 and the first supply voltage VDD1 connect, source ground, drain electrode and the second resistance R1 or
Second input of not gate NOR1 connects, and the other end of the second resistance R1 is connected with second source voltage idc2.
Operating point is set up testing circuit and is compared with the voltage preset by input service point input comparator, when input work
When making point voltage value less than preset voltage value, operating point testing circuit thinks that input service point voltage has not set up, operating point
Set up testing circuit and send the protection circuit unlatching of control signal control operating point, and make the 3rd switch Guan Bi, the first principal current
Channel selector disconnects, otherwise has then set up, and under setting up completion status, operating point protection circuit is closed, and the 3rd switches off,
First main current path switch Guan Bi;When operating point protection circuit is opened, making VD1=VG1+VTH2, wherein VD1 is the first metal-oxide-semiconductor
Drain voltage, VG1 is the first metal-oxide-semiconductor grid voltage, and VTH2 is the source threshold voltage with PMOSFET pipe;Protect in operating point
After circuit is opened, if higher than predeterminated voltage, operating point testing circuit, input service point thinks that quiescent potential has been set up, with
Time control protection electric circuit close, return to set up completion status.
Many power supply electrifyings testing circuit detects multiple power supplys and has the most all powered on, if multiple power supply is the most all
Having powered on, many power supply electrifyings testing circuit thinks that power supply has the most all powered on, and power supply electrifying testing circuit will send control
Signal makes in buffer for providing the first current source of electric current to disconnect, namely by the second main current path for main current path
Switching off, clamp circuit is opened simultaneously, buffer exports clamper in specified level;Otherwise the most all power on,
Under the state all powered on, clamp circuit turns off, the second main current path switch Guan Bi;In many power supply electrifyings protection circuit
After unlatching, if all power supplys have all powered on, circuit will return to the completion status that all powers on.
When described many power supply electrifyings testing circuit detects, only all go up when the first supply voltage and second source voltage
When electricity completes, nor gate first input end and the second input are low level simultaneously, and nor gate is output as height.
Claims (5)
1. the protection circuit of a high-speed buffer, it is characterised in that: it includes that testing circuit, operating point protection are set up in operating point
Circuit, many power supply electrifyings testing circuit, clamp circuit, the first main current path switch, the second main current path switch, operating point
The input setting up testing circuit is connected with input service point, and operating point is set up the outfan of testing circuit and protected with operating point respectively
First end of the input of protection circuit and the first main current path switch connects, the outfan of operating point protection circuit, first
The drain electrode of the second end and first metal-oxide-semiconductor of main current path switch connects, and the first end that the first main current path switchs is also with the
One supply voltage connects, and the grid of the first metal-oxide-semiconductor is connected with input service point, and the source electrode of the first metal-oxide-semiconductor is defeated with clamp circuit
Go out end, the first end of the second main current path switch connects, the second end ground connection of the second main current path switch;Described is the most electric
The input of source power on detection circuit and the first supply voltage and second source voltage connect, many power supply electrifyings testing circuit defeated
Go out end to be connected with the first end, the input of clamp circuit of the second main current path switch.
The protection circuit of a kind of high-speed buffer the most according to claim 1, it is characterised in that: described protection circuit is also
Including the first biasing circuit, the second biasing circuit, the 3rd biasing circuit, load circuit and the first current source;First principal current is led to
First end of way switch is connected by the first biasing circuit and the first supply voltage, and the source electrode of the first metal-oxide-semiconductor is by the second biasing
First end of circuit and the second main current path switch connects, and the second end of the second main current path switch and the first current source are even
Connecing, the other end ground connection of the first current source, the source electrode of the first metal-oxide-semiconductor is also connected with load circuit, the input of load circuit with
Second source voltage connects, and the input of the 3rd biasing circuit is connected with input service point.
The protection circuit of a kind of high-speed buffer the most according to claim 1, it is characterised in that: described operating point is set up
Testing circuit includes comparator, the first input end input predeterminated voltage of comparator, and the second input connects input service point, than
The outfan of relatively device and the 3rd switch first end connect, simultaneously the outfan of comparator also by after a phase inverter with first
First end of main current path switch connects.
The protection circuit of a kind of high-speed buffer the most according to claim 1, it is characterised in that: described operating point protection
Circuit include the second current source, source with PMOSFET pipe and the 3rd switch, source with PMOSFET pipe grid and comparator the
Two inputs connect, and source connects with the first end of the 3rd switch and the second current source with the source electrode of PMOSFET pipe, the second current source
The other end and the first supply voltage connect, source with the grounded drain of PMOSFET pipe, the second end of the 3rd switch and the second main electricity
Second end of circulation flow path switch connects.
The protection circuit of a kind of high-speed buffer the most according to claim 1, it is characterised in that: described many power supply electrifyings
Testing circuit includes the first resistance, the second resistance, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and nor gate, the grid of the 3rd metal-oxide-semiconductor and
Two supply voltages connect, source ground, and drain electrode is connected with the first input end of the first resistance, nor gate, another of the first resistance
End is connected with the first supply voltage;The grid of the 4th metal-oxide-semiconductor and the first supply voltage connect, source ground, drain electrode and the second electricity
Resistance, the second input of nor gate connect, and the other end of the second resistance is connected with second source voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620764990.0U CN205883204U (en) | 2016-07-20 | 2016-07-20 | Protection circuit of high -speed buffer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620764990.0U CN205883204U (en) | 2016-07-20 | 2016-07-20 | Protection circuit of high -speed buffer |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205883204U true CN205883204U (en) | 2017-01-11 |
Family
ID=57697972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620764990.0U Active CN205883204U (en) | 2016-07-20 | 2016-07-20 | Protection circuit of high -speed buffer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN205883204U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106067821A (en) * | 2016-07-20 | 2016-11-02 | 成都博思微科技有限公司 | The protection circuit of a kind of high-speed buffer and its implementation |
-
2016
- 2016-07-20 CN CN201620764990.0U patent/CN205883204U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106067821A (en) * | 2016-07-20 | 2016-11-02 | 成都博思微科技有限公司 | The protection circuit of a kind of high-speed buffer and its implementation |
CN106067821B (en) * | 2016-07-20 | 2023-04-14 | 成都博思微科技有限公司 | Protection circuit of high-speed buffer and implementation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101447691B (en) | Commutation circuit of external power supply and battery and control method thereof | |
CN102213993B (en) | Circuit for soft startup and soft shutdown | |
CN101336561A (en) | Control circuitry for providing an interface between connectable terminal and peripheral device circuitry | |
CN101421925A (en) | Method for reducing insertion loss and providing power down protection for MOSFET switches | |
CN105186444A (en) | Power supply protection circuit | |
CN207321572U (en) | SiC Mosfet hyperfrequency drive circuits | |
CN207399229U (en) | A kind of POE electric power systems | |
CN104578742B (en) | A kind of soft-start circuit | |
CN205883204U (en) | Protection circuit of high -speed buffer | |
CN105048422A (en) | Switch transistor voltage drop holding circuit and application of switch transistor voltage drop holding circuit in lithium battery protection circuit | |
CN102738781B (en) | A kind of overvoltage crowbar, IC chip and over-voltage protection method | |
CN104300946B (en) | A kind of quick power down modul of low-voltage equipment | |
CN206790346U (en) | A kind of dc source for possessing multiple-protection | |
CN205921601U (en) | Ethernet power supply system and control circuit thereof | |
CN105743059B (en) | A kind of output overcurrent protection circuit of a reference source and resistance composition | |
CN104601196B (en) | One kind enhancing isolation circuit | |
CN106067821A (en) | The protection circuit of a kind of high-speed buffer and its implementation | |
CN205507603U (en) | Circuit breaker electric operating mechanism's energy -saving control circuit | |
CN102891672B (en) | There is boot-strapped switch and the body bias effect removing method thereof of low on-resistance | |
CN204681074U (en) | DC power supply current foldback circuit | |
CN207968454U (en) | A kind of switching circuit and underwater equipment | |
CN106849926A (en) | A kind of pressure nmos switch control circuit wide | |
CN101515711A (en) | Power supply polarity protection circuit | |
CN106411114A (en) | Gate protection circuit and power electronic equipment | |
CN207321118U (en) | One kind auxiliary output isolation control circuit and Switching Power Supply |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant |