CN205874585U - Growing device of carborundum - Google Patents
Growing device of carborundum Download PDFInfo
- Publication number
- CN205874585U CN205874585U CN201620598511.2U CN201620598511U CN205874585U CN 205874585 U CN205874585 U CN 205874585U CN 201620598511 U CN201620598511 U CN 201620598511U CN 205874585 U CN205874585 U CN 205874585U
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- CN
- China
- Prior art keywords
- seed crystal
- carborundum
- crucible
- seed
- hydraulically extensible
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Abstract
The utility model relates to a carborundum seeded growth technical field specifically is a growing device of carborundum. The device adopts hydraulic telescoping rod and the design of hollow tubulose seed crystal axle, through the mode of adding first telescopic link, can independently regulate and control the distance between seed crystal and the crucible, because the crucible bilateral symmetry is equipped with the central axis and the coincidence of seed crystal bracket the central axis between the 2nd hydraulic telescoping rod and the 2nd hydraulic telescoping rod, has guaranteed quick alignment the at center with the crucible center of seed crystal simultaneously, saves operating time, has improved work efficiency greatly, simultaneously, the seed crystal axle adopts the hollow tube column structure, has reduced deformation, has prolonged life, through using the seed crystal bracket, avoided in the crystal local stress to cause the condition such as fracture, defect are many greatly, can sprout high -quality siC crystal.
Description
Technical field
This utility model relates to silicon carbide seed growing technology field, the grower of a kind of carborundum.
Background technology
Carborundum (SiC) is the third generation half semiconductor material with wide forbidden band after silicon, germanium, GaAs etc., and it is in forbidden band
The aspects such as width, thermal conductivity, critical breakdown strength, saturated electrons drift speed have obvious advantage.4H-SiC and 6H-SiC
Energy gap to be respectively the forbidden band of 3.26eV and 3.08eV, 3C-SiC the narrowest, its energy gap is also at about 2.39eV.SiC
Energy gap be 2-3 times of Si, thermal conductivity is 2.6-3.3 times of Si, and critical breakdown strength is 7-13 times of Si, saturated electrons
Drift speed is 2-2.7 times of Si.Use wide-band gap material that the operating temperature of device can be greatly improved, use SiC substrate
Power device, maximum operating temperature is likely more than 600 DEG C.Higher critical breakdown strength can make the volume of minimizing device,
Therefore save substantial amounts of heat abstractor while can making device miniaturization, reduce the consumption of the energy.Higher saturated electrons is floated
Move speed and can improve the switching speed of device, reduce switching loss.So compared with Si, SiC is particularly suited for manufacturing high temperature, height
Frequently, powerful power device.But growth of silicon carbide device in the market, need spend large force gas could be by crucible
The axis of center and seed crystal be accurately aimed at, relatively time-consuming arduously and at present device uses solid seed shaft, when
When suffered temperature is higher, deformation is relatively big, and service life shortens.
Summary of the invention
The purpose of this utility model is to provide the grower of a kind of carborundum, to solve to propose in above-mentioned background technology
Problem.This utility model has simple in construction, advantage easy to use.
For achieving the above object, the following technical scheme of this utility model offer:
A kind of grower of carborundum, including housing, described housing be internally provided with heat-insulation layer, described heat-insulation layer
Interior side-lower is provided with chute, is provided with crucible by bracket slide in chute, and the internal left and right sides of described heat-insulation layer all offers
Slotted eye, the bottom of described slotted eye is installed with the first hydraulically extensible bar, is provided with connecting plate between described first hydraulically extensible bar,
Fixed block is fixedly mounted on described connecting plate；Connecting below fixed block and have hollow tubular seed shaft, seed shaft lower end connects seed
Crystal holder frame；Described crucible is symmetrically arranged on two with the central axis between the second hydraulically extensible bar and the second hydraulically extensible bar and seed crystal
Carrier center dead in line.
Operation principle: when people need to cultivate seed crystal, drives connecting plate to rise by the first hydraulically extensible bar, then same
Time adjusted in concert the second hydraulically extensible bar so that it is compress crucible, then fix seed crystal by seed crystal bracket, so that seed crystal is in
The surface of crucible so that the center of crucible and the center alignment of seed crystal.Owing to seed shaft is hollow tubular, tube wall is relatively thin,
Under high-temperature condition, thermal expansion size is little, thus decreases the deformation size of seed shaft, extends service life.
Further, described seed crystal bracket includes graphite cake and graphite arm, and graphite arm is fixedly connected on graphite cake
Lower section, described graphite cake, by being mechanically connected or being connected by binding agent and seed shaft are fixing, has out below graphite arm
Mouthful, it is used for accommodating seed crystal.In growth course, do not use any binding agent to fix seed crystal, only carry seed by seed crystal bracket
Brilliant.Seed crystal is in crystal growing process, owing to there is space between seed crystal and seed crystal bracket, under the effect of solution flowing, and seed
Crystalline substance is not fettered by seed crystal bracket, so can be prevented effectively from crystal generation stress, it is to avoid solidification inequality when using binding agent
In causing crystal time even, local stress causes greatly the situations such as cracking, defect are many.By using seed crystal bracket, can grow high-quality
The SiC crystal of amount.
The height of described opening is more than the thickness of seed crystal.
Compared with prior art, the beneficial effects of the utility model are: this apparatus structure is simple, stretch by adding first
The mode of bar, it is possible to the distance between master regulation seed crystal and crucible, stretches simultaneously because crucible is symmetrically arranged on two with the second hydraulic pressure
Central axis between contracting bar and the second hydraulically extensible bar and seed crystal bracket central axes, it is ensured that the center of seed crystal and earthenware
The quick alignment at crucible center, saves the operating time, substantially increases work efficiency；Meanwhile, seed shaft uses hollow tubular structures,
Decrease deformation, extend service life；By using seed crystal bracket, it is to avoid in crystal, local stress causes greatly cracking, scarce
Fall into the situations such as many, high-quality SiC crystal can be grown.
Accompanying drawing explanation
Fig. 1 is this utility model structural representation；
Fig. 2 is the plan structure schematic diagram of Fig. 1；
Fig. 3 is the structural representation of seed crystal bracket described in the utility model；
In figure: 1 housing, 2 heat-insulation layers, 3 chutes, 4 supports, 5 crucibles, 6 slotted eyes, 7 first hydraulically extensible bars, 8 connecting plates, 9
Fixed block, 10 seed shafts, 11 seed crystal brackets, 12 second hydraulically extensible bars, 13 seed crystals, 14, graphite cake, 15 graphite arms, 16 open
Mouthful.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of this utility model rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under making creative work premise
The every other embodiment obtained, broadly falls into the scope of this utility model protection.
A kind of grower of carborundum, including housing 1, described housing 1 be internally provided with heat-insulation layer 2, described insulation
The interior side-lower of layer 2 is provided with chute 3, is slidably fitted with crucible 5 by support 4 in chute 3, about described heat-insulation layer 2 inside two
Side all offers slotted eye 6, and the bottom of described slotted eye 6 is installed with the first hydraulically extensible bar 7, described first hydraulically extensible bar 7
Between be provided with connecting plate 8, on described connecting plate 8 fixedly mount fixed block 9；Connect below fixed block 9 and have hollow tubular seed shaft
10, seed shaft 10 lower end connects seed crystal bracket 11；Described crucible 5 is symmetrically arranged on two with the second hydraulically extensible bar 12 and the second liquid
Central axis between pressure expansion link 12 and seed crystal bracket 11 central axes.
Described seed crystal bracket 11 includes graphite cake 14 and graphite arm 15, and graphite arm 15 is fixedly connected on graphite cake 14
Lower section, described graphite cake 14 is by being mechanically connected or being connected by binding agent is fixing with seed shaft 10, graphite arm 15 times
There is opening 16 side.
The height of described opening 16 is more than the thickness of seed crystal 13.
Embodiment the most of the present utility model, for the ordinary skill in the art,
It is appreciated that in the case of without departing from principle of the present utility model and spirit and these embodiments can be carried out multiple change, repair
Changing, replace and modification, scope of the present utility model is defined by the appended claims and the equivalents thereof.
Claims (3)
1. a grower for carborundum, including housing (1), it is characterised in that: described housing (1) be internally provided with insulation
Layer (2), the interior side-lower of described heat-insulation layer (2) is provided with chute (3), is slidably fitted with crucible by support (4) in chute (3)
(5), the internal left and right sides of described heat-insulation layer (2) all offers slotted eye (6), and the bottom of described slotted eye (6) is installed with first
Hydraulically extensible bar (7), is provided with connecting plate (8) between described first hydraulically extensible bar (7), the upper fixed installation of described connecting plate (8)
Fixed block (9)；Fixed block (9) lower section connects hollow tubular seed shaft (10), and seed shaft (10) lower end connects seed crystal bracket
(11)；Described crucible (5) is symmetrically arranged on two with the center between the second hydraulically extensible bar (12) and the second hydraulically extensible bar (12)
Axis and seed crystal bracket (11) central axes.
The grower of a kind of carborundum the most according to claim 1, it is characterised in that: described seed crystal bracket (11) bag
Including graphite cake (14) and graphite arm (15), graphite arm (15) is fixedly connected on graphite cake (14) lower section, described graphite cake
(14) by being mechanically connected or being connected by binding agent and seed shaft (10) are fixing, there is opening graphite arm (15) lower section
(16)。
The grower of a kind of carborundum the most according to claim 2, it is characterised in that: the height of described opening (16) is big
Thickness in seed crystal (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620598511.2U CN205874585U (en) | 2016-06-17 | 2016-06-17 | Growing device of carborundum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620598511.2U CN205874585U (en) | 2016-06-17 | 2016-06-17 | Growing device of carborundum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205874585U true CN205874585U (en) | 2017-01-11 |
Family
ID=57690690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620598511.2U Active CN205874585U (en) | 2016-06-17 | 2016-06-17 | Growing device of carborundum |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205874585U (en) |
-
2016
- 2016-06-17 CN CN201620598511.2U patent/CN205874585U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190326 Address after: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250000 Meilihu Meili Road, Huaiyin District, Jinan City, Shandong Province Patentee before: Shandong Tianyue Crystal Material Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
|
| CP03 | Change of name, title or address |