CN205752160U - A kind of capacitor - Google Patents

A kind of capacitor Download PDF

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Publication number
CN205752160U
CN205752160U CN201620595840.1U CN201620595840U CN205752160U CN 205752160 U CN205752160 U CN 205752160U CN 201620595840 U CN201620595840 U CN 201620595840U CN 205752160 U CN205752160 U CN 205752160U
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electric capacity
sub
metal connecting
connecting line
capacitance
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张科峰
刘薇
谭珍
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WUHAN XINTAI TECHNOLOGY Co Ltd
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WUHAN XINTAI TECHNOLOGY Co Ltd
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Abstract

The utility model discloses a kind of capacitor, solve and reduce, by the size changing single electric capacity, the method that the difference rate of lead capacitance promotes electric capacity matching precision at present, the problem that IC design is limited, described capacitor are included: along the first electric capacity (C1) and second electric capacity (C2) of the arrangement of axle (a) crossed-symmetrical;First electric capacity (C1) includes 2N+1 the first sub-electric capacity (C11~C1i) being sequentially connected with by first group of metal connecting line (L1), and the second electric capacity (C2) includes 2N+1 the second sub-electric capacity (C21~C2i) being sequentially connected with by second group of metal connecting line (L2);Wherein, N be positive integer, i be 2N+1;The difference rate of the capacitance sum of sub-electric capacity (C11~C1i) and sub-electric capacity (C21~C2i) is not more than the first preset value, and the difference rate of the parasitic capacitance of first group of metal connecting line (L1) and second group of metal connecting line (L2) is not more than the second preset value.Achieve on the premise of without changing the size of single electric capacity, promote the effect of electric capacity matching precision.

Description

A kind of capacitor
Technical field
This utility model relates to IC Layout technical field, particularly relates to a kind of capacitor.
Background technology
In the manufacture process of integrated circuit, metal, electrolyte and other materials are used such as physical vapour deposition (PVD), chemistry Vapour deposition is produced on the surface of silicon chip in interior various methods, forms the metal interconnecting wires including between electronic component and element Structured metal layer, between each layer of structured metal layer again with multiple metal filled through holes be connected so that circuit has the highest Complexity and current densities.One important indicator of performance of integrated circuits is path delay, i.e. from one be input to one defeated Go out the required time;The path delay of integrated circuit includes the Interconnect Delay between device time delay and device.Along with work The reduction of skill node and the increase of number of devices, the time delay of interconnection line proportion in total time delay is increasing.Interconnection line Time delay depend mainly on the parasitic parameter of interconnection line, such as resistance, electric capacity, inductance etc., the parasitic parameter of interconnection line is by interconnection line Material, geological information such as width x length x height etc. and interconnection line between parameter distance, just length etc. is determined.
The precision of Analogous Integrated Electronic Circuits and performance typically depend on device matching and obtain.Generally, matching precision gets over Gao Zemo Precision and the performance of intending integrated circuit are the best.Path delay is to reflect that the precision of Analogous Integrated Electronic Circuits and a key of performance refer to Mark, it will usually coupling device is set on the integrated, reduces the path delay of integrated circuit;Wherein, coupling device refers to Special make on the integrated be located proximate to and difference ratio (i.e. matching precision) is two identical device determining constant. In these coupling devices, matching capacitance is the important coupling device in integrated circuit, but, many mechanism are (such as doping, oxidation Layer thickness, process deviation, the imperfect flow of electric current, diffusion influence each other, mechanical stress, thermograde) and many other are former Systematic error because causing all can increase capacitor mismatch error, and then affects electric capacity coupling.
It is inevitable that these manufacture the objective factor in chip processes, and current designer is by optimizing layout design Reduce its impact.In view of in actual applications device being connected into the resistance of wire and the electric capacity of circuit, electric capacity can be caused Joining precision relatively low, even can cause system mismatch, layout design personnel realize wire electricity by the size increasing single electric capacity Appearance minimizes, but this mode inapplicable all design requirements, reason includes: the increase of capacitor size can affect integrated circuit Area, the increase of capacitor size make the capacitance of this electric capacity do not meet design require or do not reach high-accuracy capacitor The design requirement joined.
Sum it up, prior art exists, reduce lead capacitance difference rate by the size changing single electric capacity, from And the method promoting electric capacity matching precision so that the technical problem that IC design is limited.
Utility model content
This utility model, for present in prior art, reduces lead capacitance by the size changing single electric capacity poor Value rate, thus the method promoting electric capacity matching precision so that the technical problem that IC design is limited, it is provided that a kind of electric capacity Device, it is achieved that without promoting electric capacity matching precision on the premise of changing the size of single electric capacity, thus do not interfere with integrated electricity The area on road, also will not change the capacitance of electric capacity so that IC design will not be imitated by the technology that capacitor size is limited Really.
This utility model provides a kind of capacitor, including:
First electric capacity of symmetry arrangement and the second electric capacity;
Described first electric capacity includes first group of metal connecting line and 2N+1 the first sub-electric capacity, and described second electric capacity includes second Group metal connecting line and 2N+1 the second sub-electric capacity;Wherein, N is positive integer, and described 2N+1 the first sub-electric capacity is by described first Group metal connecting line is sequentially connected with, and described 2N+1 the second sub-electric capacity is sequentially connected with by described second group of metal connecting line;Described 2N+ 1 the first sub-electric capacity and described 2N+1 the second sub-electric capacity intersect row along the axis of symmetry of described first electric capacity and described second electric capacity Cloth;
The capacitance of described 2N+1 the first sub-electric capacity and with the capacitance of described 2N+1 the second sub-electric capacity and difference rate little In equal to the first preset value, the parasitic capacitance capacitance of described first group of metal connecting line is parasitic electric with described second group of metal connecting line Hold the difference rate of capacitance less than or equal to the second preset value.
Optionally, in described 2N+1 the first sub-electric capacity, arbitrary first sub-electric capacity is appointed in described 2N+1 the second sub-electric capacity The parameter of one second sub-electric capacity is the most identical with capacitance.
Optionally, described 2N+1 the first sub-electric capacity forms 2N+1 son with described 2N+1 the second sub-electric capacity one_to_one corresponding Electric capacity pair, described 2N+1 sub-electric capacity stacks gradually arrangement, so that arbitrary first sub-electric capacity is adjacent to according to setting arrangement mode Electric capacity is the second sub-electric capacity and arbitrary second sub-electric capacity adjacent capacitor is the first sub-electric capacity.
Optionally, two sub-electric capacity of described 2N+1 sub-electric capacity centering arbitrary neighborhood between open circuit, described 2N+1 Open circuit between the arbitrary sub-electric capacity of sub-electric capacity centering the first sub-electric capacity and the second sub-electric capacity to being comprised.
Optionally, described first group of metal connecting line includes that 2N bar the first metal connecting line, described second group of metal connecting line include 2N bar the second metal connecting line;Wherein, described 2N bar the first metal connecting line at least exists two metal connecting lines and uses different layers , at least there are two metal connecting lines in described 2N bar the second metal connecting line and use the metal of different layers in metal.
The one or more technical schemes provided in this utility model, at least have the following technical effect that or advantage:
Owing to, in this utility model, capacitor includes the first electric capacity and second electric capacity of symmetry arrangement;Described first electricity Holding and include first group of metal connecting line and 2N+1 the first sub-electric capacity, described second electric capacity includes that second group of metal connecting line and 2N+1 are individual Second sub-electric capacity;Wherein, N is positive integer, and described 2N+1 the first sub-electric capacity is sequentially connected with by described first group of metal connecting line, Described 2N+1 the second sub-electric capacity is sequentially connected with by described second group of metal connecting line;Described 2N+1 the first sub-electric capacity is with described 2N+1 the second sub-electric capacity is along described first electric capacity and the axis of symmetry cross arrangement of described second electric capacity;At above-mentioned capacitance structure On the basis of, capacitance and the capacitance of described 2N+1 the second sub-electric capacity of described 2N+1 the first sub-electric capacity are set, so that described 2N+ The capacitance of 1 the first sub-electric capacity and with the capacitance of described 2N+1 the second sub-electric capacity and difference rate preset less than or equal to first Value, and rationally selects and arranges first group of metal connecting line and second group of metal connecting line, so that the posting of described first group of metal connecting line Raw capacitor's capacity is less than or equal to the second preset value with the difference rate of the parasitic capacitance capacitance of described second group of metal connecting line, to realize Without promoting electric capacity matching precision on the premise of changing the size of single electric capacity, thus do not interfere with integrated circuit area, Also the capacitance of electric capacity will not be changed so that the technique effect that IC design will not be limited by capacitor size.Effectively Solve prior art reduces lead capacitance difference rate by the size changing single electric capacity, thus promote electric capacity matching precision Method so that the technical problem that IC design is limited.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, the accompanying drawing in describing below is only It is embodiment of the present utility model, for those of ordinary skill in the art, on the premise of not paying creative work, also Other accompanying drawing can be obtained according to the accompanying drawing provided.
The first capacitor arrangement schematic diagram that Fig. 1 provides for this utility model embodiment;
The second capacitor arrangement schematic diagram that Fig. 2 provides for this utility model embodiment;
The laying out pattern method flow diagram of a kind of capacitor that Fig. 3 provides for this utility model embodiment.
Detailed description of the invention
This utility model embodiment, by providing a kind of capacitor, solves present in prior art, single by changing The size of individual electric capacity reduces lead capacitance difference rate, thus the method promoting electric capacity matching precision so that IC design Limited technical problem, it is achieved that without promoting electric capacity matching precision on the premise of changing the size of single electric capacity, thus not The area of integrated circuit can be affected, also will not change the capacitance of electric capacity so that IC design will not be by capacitor size The technique effect limited.
The technical scheme of this utility model embodiment is for solving above-mentioned technical problem, and general thought is as follows:
This utility model embodiment provides a kind of capacitor, including: the first electric capacity of symmetry arrangement and the second electric capacity;Institute Stating the first electric capacity and include first group of metal connecting line and 2N+1 the first sub-electric capacity, described second electric capacity includes second group of metal connecting line With 2N+1 the second sub-electric capacity;Wherein, N is positive integer, and described 2N+1 the first sub-electric capacity is by described first group of metal connecting line Being sequentially connected with, described 2N+1 the second sub-electric capacity is sequentially connected with by described second group of metal connecting line;Described 2N+1 first son Electric capacity and described 2N+1 the second sub-electric capacity are along described first electric capacity and the axis of symmetry cross arrangement of described second electric capacity;Described 2N The capacitance of+1 the first sub-electric capacity and with the capacitance of described 2N+1 the second sub-electric capacity and difference rate preset less than or equal to first The difference rate of the parasitic capacitance capacitance of value, the parasitic capacitance capacitance of described first group of metal connecting line and described second group of metal connecting line Less than or equal to the second preset value.
Visible, in this utility model embodiment, by two electric capacity (the i.e. first electric capacity by needing coupling in capacitor With the second electric capacity) it is respectively divided into sub-electric capacity (i.e. 2N+1 the first sub-electric capacity and 2N that the odd number stacking more than or equal to 3 is arranged + 1 the second sub-electric capacity), and by first group of metal connecting line, described 2N+1 the first sub-electric capacity is sequentially connected with, and by the Described 2N+1 the second sub-electric capacity is sequentially connected with by two groups of metal connecting lines, and makes described 2N+1 the first sub-electric capacity and described 2N+1 Individual second sub-electric capacity is along described first electric capacity and the axis of symmetry cross arrangement of described second electric capacity;Then, at above-mentioned capacitance structure On the basis of, capacitance and the capacitance of described 2N+1 the second sub-electric capacity of described 2N+1 the first sub-electric capacity are set, so that described 2N+ The capacitance of 1 the first sub-electric capacity and with the capacitance of described 2N+1 the second sub-electric capacity and difference rate preset less than or equal to first Value, and rationally selects and arranges first group of metal connecting line and second group of metal connecting line, so that the posting of described first group of metal connecting line Raw capacitor's capacity is less than or equal to the second preset value with the difference rate of the parasitic capacitance capacitance of described second group of metal connecting line, to realize Without promoting electric capacity matching precision on the premise of changing the size of single electric capacity, thus do not interfere with integrated circuit area, Also the capacitance of electric capacity will not be changed so that the technique effect that IC design will not be limited by capacitor size.Effectively Solve prior art reduces lead capacitance difference rate by the size changing single electric capacity, thus promote electric capacity matching precision Method so that the technical problem that IC design is limited.
In order to be better understood from technique scheme, below in conjunction with Figure of description and specific embodiment to upper State technical scheme to be described in detail, it should be understood that the specific features in this utility model embodiment and embodiment is to this The detailed description of application technical scheme rather than the restriction to technical scheme, in the case of not conflicting, this practicality Technical characteristic in new embodiment and embodiment can be mutually combined.
Embodiment one
Refer to Fig. 1, this utility model embodiment provides a kind of capacitor 1, including:
The first electric capacity C1 and the second electric capacity C2 of symmetry arrangement;
First electric capacity C1 includes first group of metal connecting line L1 and 2N+1 the first sub-electric capacity (C11~C1i), the second electric capacity C2 Including second group of metal connecting line L2 and 2N+1 the second sub-electric capacity (C21~C2i);Wherein, N is positive integer, and i is equal to 2N+1,2N+ 1 the first sub-electric capacity (C11~C1i) is sequentially connected with by first group of metal connecting line L1,2N+1 the second sub-electric capacity (C21~ C2i) it is sequentially connected with by second group of metal connecting line L2;2N+1 the first sub-electric capacity (C11~C1i) and 2N+1 the second sub-electric capacity (C21~C2i) is along the axis of symmetry a cross arrangement of the first electric capacity C1 and the second electric capacity C2;
The capacitance of 2N+1 the first sub-electric capacity (C11~C1i) and the capacitance of second sub-electric capacity (C21~C2i) individual with 2N+1 The difference rate of sum is less than or equal to the first preset value, the parasitic capacitance capacitance of first group of metal connecting line L1 and second group of metal connecting line L2 The difference rate of parasitic capacitance capacitance less than or equal to the second preset value.
In specific implementation process, in order to improve the first electric capacity C1 and the coupling ratio of the second electric capacity C2,2N+1 first In sub-electric capacity (C11~C1i), the parameter of the sub-electric capacity of any two first is the most identical with capacitance, 2N+1 the second sub-electric capacity (C21~ C2i) in, the parameter of the sub-electric capacity of any two second is the most identical with capacitance, and appoints in 2N+1 the first sub-electric capacity (C11~C1i) One first sub-electric capacity is the most identical with parameter and the capacitance of arbitrary second sub-electric capacity in 2N+1 the second sub-electric capacity (C21~C2i).So And, in actual applications, due to inevitable fabrication error, the sub-electric capacity of any two first, the sub-electric capacity of any two second Or arbitrary first sub-electric capacity cannot be identical with arbitrary second sub-electric capacity, there will necessarily be little bit different, in the present embodiment, Need to ensure 2N+1 the first sub-electric capacity (C11~C1i) capacitance and with the capacitance of 2N+1 the second sub-electric capacity (C21~C2i) and Difference rate less than or equal to the first preset value.Concrete, set 2N+1 the first sub-electric capacity (C11~C1i) and 2N+1 individual second The capacitance of sub-electric capacity (C21~C2i) and respectively X1, Y1, set described difference rate and exist such as following formula as P1, P1 and X1, Y1 (1) mathematical relationship:
P1=| X1-Y1 |/((X1+Y1)/2) (1)
It addition, introduce resistance and the electric capacity of circuit in actual applications for reducing wire, to improve the first electric capacity further C1 and the coupling ratio of the second electric capacity C2, the parasitic capacitance capacitance of first group of metal connecting line L1 and posting of second group of metal connecting line L2 The difference rate of raw capacitor's capacity is less than or equal to the second preset value.Concrete, the parasitic capacitance setting first group of metal connecting line L1 is held The parasitic capacitance capacitance of value and second group of metal connecting line L2 is respectively X2, Y2, sets described difference rate and deposits as P2, P2 and X2, Y2 Such as the mathematical relationship of following formula (2):
P2=| X2-Y2 |/((X2+Y2)/2) (2)
In the present embodiment, described first preset value can value be 0.1%, and described second preset value can value be 0.08%.It should be noted that in specific implementation process, described first preset value and described second preset value can be according to specifically Depending on design requires, it is not especially limited here.
The parasitic capacitance capacitance introduced with line owing to the actual capacitance of electric capacity is the capacitance of electric capacity own and, i.e. first is electric Hold the capacitance that actual capacitance is 2N+1 the first sub-electric capacity (C11~C1i) of C1 and add the parasitism of first group of metal connecting line L1 Capacitor's capacity, the actual capacitance of the second electric capacity C2 are the capacitance of 2N+1 the second sub-electric capacity (C21~C2i) and add second group of gold Belong to the parasitic capacitance capacitance of line L2, when described 2N+1 the first sub-electric capacity (C11~C1i) capacitance and with described 2N+1 the The difference rate of the capacitance sum of two sub-electric capacity (C21~C2i) is less than or equal to the first preset value, and described first group of metal connecting line L1 When the difference rate of the parasitic capacitance capacitance of parasitic capacitance capacitance and described second group of metal connecting line L2 is less than or equal to the second preset value, The matching precision of the first electric capacity C1 and the second electric capacity C2 is better than ± 0.1%.
In specific implementation process, referring still to Fig. 1, described 2N+1 the first sub-electric capacity (C11~C1i) and described 2N+1 Individual second sub-electric capacity (C21~C2i) one_to_one corresponding forms 2N+1 sub-electric capacity pair, and described 2N+1 sub-electric capacity is to according to the row of setting Mode for cloth stacks gradually arrangement, so that arbitrary first sub-electric capacity adjacent capacitor is the second sub-electric capacity and arbitrary second sub-electric capacity phase Adjacent electric capacity is the first sub-electric capacity.Concrete, the 1st the first sub-electric capacity C11 and the 1st the second sub-electric capacity C21 is correspondingly formed the 1st Sub-electric capacity pair, and the 1st the first sub-electric capacity C11 and the 1st the second sub-electric capacity C21 is symmetrical about axis of symmetry a;2nd first son Electric capacity C12 and the 2nd the second sub-electric capacity C22 is correspondingly formed the 2nd sub-electric capacity pair, and the 2nd the first sub-electric capacity C12 and the 2nd Second sub-electric capacity C22 is symmetrical about axis of symmetry a;...;2N+1 the first sub-electric capacity C1i and 2N+1 the second sub-electric capacity C2i It is correspondingly formed 2N+1 sub-electric capacity pair, and 2N+1 the first sub-electric capacity C1i and 2N+1 the second sub-electric capacity C2i is about right Claim axle a symmetrical.Described 2N+1 sub-electric capacity stacks gradually arrangement to according to setting arrangement mode, the first sub-electric capacity of odd-numbered And the second sub-electric capacity of even-numbered is arranged in the side of axis of symmetry a, the first sub-electric capacity and odd-numbered of even-numbered The second sub-electric capacity be arranged in the opposite side of axis of symmetry a so that described 2N+1 the first sub-electric capacity (C11~C1i) and described 2N+ 1 the second sub-electric capacity (C21~C2i) is along the axis of symmetry a cross arrangement of the first electric capacity C1 and the second electric capacity C2.
Further, for avoiding the first electric capacity C1 and the second electric capacity C2 short circuit, in specific implementation process, described 2N+1 son Two sub-electric capacity of electric capacity centering arbitrary neighborhood between open circuit, described 2N+1 the arbitrary sub-electric capacity of sub-electric capacity centering is to being comprised The first sub-electric capacity and the second sub-electric capacity between open circuit.Such as, described 1st sub-electric capacity is to (by the 1st the first sub-electric capacity C11 Be correspondingly formed with the 1st the second sub-electric capacity C21) with described 2nd sub-electric capacity to (by the 2nd the first sub-electric capacity C12 and the 2nd Second sub-electric capacity C22 is correspondingly formed) open circuit, and the 1st the first sub-electric capacity C11 and the 1st the second sub-electric capacity C21 open circuit, the 2nd First sub-electric capacity C12 and the 2nd the second sub-electric capacity C22 open circuit;...;Described 2N sub-electric capacity is to (by 2N first son electricity Hold and be correspondingly formed with 2N the second sub-electric capacity) with described 2N+1 sub-electric capacity to (by 2N+1 the first sub-electric capacity and the 2N+1 the second sub-electric capacity is correspondingly formed) open circuit, and 2N the first sub-electric capacity second sub-electric capacity open circuit individual with 2N, 2N+1 Individual first sub-electric capacity and 2N+1 the second sub-electric capacity open circuit.
In specific implementation process, first group of metal connecting line L1 includes 2N bar the first metal connecting line, second group of metal connecting line L2 includes 2N bar the second metal connecting line;Wherein, any bar the first metal connecting line and the shape size of any bar the second metal connecting line Identical, described 2N bar the first metal connecting line at least exists two metal connecting lines and uses the metal of different layers, described 2N bar Second metal connecting line at least exists two metal connecting lines and uses the metal of different layers, use the metal connecting line of different layers metal Unit-area capacitance capacitance is different.Concrete, referring still to 2N bar the first metal connecting line bag of Fig. 1, first group of metal connecting line L1 Include: connect the 1st the first sub-electric capacity C11 and the metal connecting line L11 of the 2nd the first sub-electric capacity C12, connect the 2nd first son electricity Hold C12 and the metal connecting line L12 of the 3rd the first sub-electric capacity C13 ..., connect 2N the first sub-electric capacity (being not drawn in Fig. 1) Metal connecting line (being not drawn in Fig. 1) with 2N+1 the first sub-electric capacity (being not drawn in Fig. 1);Same, second group of metal is even 2N article of second metal connecting line of line L2 includes: connect the metal of the 1st the second sub-electric capacity C21 and the 2nd the second sub-electric capacity C22 even Line L21, connects the 2nd the second sub-electric capacity C22 and the metal connecting line L22 of the 3rd the second sub-electric capacity C23 ..., connect 2N The metal connecting line of the second sub-electric capacity (being not drawn in Fig. 1) and 2N+1 the second sub-electric capacity (being not drawn in Fig. 1) (is not drawn in Fig. 1 Go out).
Below as a example by N value is 1, refer to Fig. 2, the first electric capacity C1 and the second electric capacity C2 all comprises three straton electric capacity, Concrete, the first electric capacity C1 includes three the first sub-electric capacity (C11, C12, C13) that stacking is arranged, and the second electric capacity C2 includes stacking Three the second sub-electric capacity (C21, C22, C23) arranged, three the first sub-electric capacity (C11, C12, C13) and three the second sub-electric capacity The parameter of (C21, C22, C23) is the most identical with capacitance, to ensure the capacitance of the first electric capacity C1 own and the of the second electric capacity C2 own The difference rate of capacitance is less than or equal to described first preset value.
Referring still to Fig. 2, the upper left corner A2 of the lower right corner A1 and the first sub-electric capacity C12 of the first sub-electric capacity C11 passes through metal Line L11 connects, and the upper right corner A4 of the lower left corner A3 and the first sub-electric capacity C13 of the first sub-electric capacity C12 is by metal connecting line L12 even Connecing, the upper right corner B2 of the lower left corner B1 and the second sub-electric capacity C22 of the second sub-electric capacity C21 is connected by metal connecting line L21, the second son The upper left corner B4 of the lower right corner B3 of electric capacity C22 and the second sub-electric capacity C23 is connected by metal connecting line L22.For avoiding the first electric capacity C1 and the second electric capacity C2 short circuit, metal connecting line L11 and metal connecting line L21 is the metal of different layers, and metal connecting line L12 is with metal even Line L22 is the metal of different layers.It addition, metal connecting line L11 and metal connecting line L22 belongs to similar layer or with layer metal, i.e. metal The parasitic capacitance capacitance of line L11 and metal connecting line L22 is essentially identical, and metal connecting line L12 belongs to similar layer with metal connecting line L21 Or parasitic capacitance capacitance with layer metal, i.e. metal connecting line L12 and metal connecting line L21 is essentially identical, to ensure the first electric capacity C1 The difference of the parasitic capacitance capacitance that the introduced parasitic capacitance capacitance of middle metal connecting line is introduced with metal connecting line in the second electric capacity C2 Value rate is less than or equal to described second preset value.
Sum it up, in this utility model embodiment, by two electric capacity (i.e. first by needing coupling in capacitor Electric capacity and the second electric capacity) it is respectively divided into sub-electric capacity (i.e. 2N+1 the first sub-electric capacity that the odd number stacking more than or equal to 3 is arranged With 2N+1 the second sub-electric capacity), and by first group of metal connecting line, described 2N+1 the first sub-electric capacity is sequentially connected with, Yi Jitong Cross second group of metal connecting line to be sequentially connected with by described 2N+1 the second sub-electric capacity, and make described 2N+1 the first sub-electric capacity with described 2N+1 the second sub-electric capacity is along described first electric capacity and the axis of symmetry cross arrangement of described second electric capacity;Then, at above-mentioned electric capacity On architecture basics, capacitance and the capacitance of described 2N+1 the second sub-electric capacity of described 2N+1 the first sub-electric capacity is set, so that institute State 2N+1 the first sub-electric capacity capacitance and with the capacitance of described 2N+1 the second sub-electric capacity and difference rate less than or equal to first Preset value, and rationally select and arrange first group of metal connecting line and second group of metal connecting line, so that described first group of metal connecting line The difference rate of parasitic capacitance capacitance of parasitic capacitance capacitance and described second group of metal connecting line less than or equal to the second preset value, with Realize without promoting electric capacity matching precision on the premise of changing the size of single electric capacity, thus do not interfere with the face of integrated circuit Amass, also will not change the capacitance of electric capacity so that the technique effect that IC design will not be limited by capacitor size.Effectively Ground solves to reduce lead capacitance difference rate by the size changing single electric capacity in prior art, thus promotes electric capacity coupling essence The method of degree so that the technical problem that IC design is limited.
Embodiment two
Conceive based on same utility model, refer to Fig. 3, present invention also provides the laying out pattern side of a kind of capacitor Method, comprises the steps:
S1, respectively stacking arrange 2N+1 the first sub-electric capacity and 2N+1 the second sub-electric capacity, and make described 2N+1 first Sub-electric capacity and described 2N+1 the second sub-capacitive cross symmetry arrangement, wherein, N is positive integer;
S2, it is sequentially connected with described 2N+1 the first sub-electric capacity by first group of metal connecting line, to form the first electric capacity;And It is sequentially connected with described 2N+1 the second sub-electric capacity, to form the second electric capacity by second group of metal connecting line;Wherein, described 2N+1 The capacitance of the first sub-electric capacity and with the capacitance of described 2N+1 the second sub-electric capacity and difference rate less than or equal to the first preset value, institute The difference rate of the parasitic capacitance capacitance and the parasitic capacitance capacitance of described second group of metal connecting line of stating first group of metal connecting line is less than Equal to the second preset value.
Wherein, in described 2N+1 the first sub-electric capacity, arbitrary first sub-electric capacity is arbitrary with described 2N+1 the second sub-electric capacity The parameter of the second sub-electric capacity is the most identical with capacitance.
In specific implementation process, described 2N+1 the first sub-electric capacity and described 2N+1 the second sub-electric capacity one_to_one corresponding shape 2N+1 sub-electric capacity pair, described 2N+1 sub-electric capacity is become to stack gradually arrangement to according to setting arrangement mode, so that arbitrary first Sub-electric capacity adjacent capacitor is the second sub-electric capacity and arbitrary second sub-electric capacity adjacent capacitor is the first sub-electric capacity.
Further, two sub-electric capacity of described 2N+1 sub-electric capacity centering arbitrary neighborhood between open circuit, described 2N+1 Open circuit between the arbitrary sub-electric capacity of sub-electric capacity centering the first sub-electric capacity and the second sub-electric capacity to being comprised.
In specific implementation process, described first group of metal connecting line includes 2N bar the first metal connecting line, described second group of gold Belong to line and include 2N bar the second metal connecting line;Wherein, at least there are two metal connecting lines in described 2N bar the first metal connecting line to adopt With the metal of different layers, described 2N bar the second metal connecting line at least exists two metal connecting lines and uses the metal of different layers.
As described above, above-mentioned laying out pattern method is used for generating above-mentioned capacitor, so, this laying out pattern method Consistent with one or more embodiments of above-mentioned capacitor, repeat the most one by one at this.
Although having been described for preferred embodiment of the present utility model, but those skilled in the art once knowing substantially Creative concept, then can make other change and amendment to these embodiments.So, claims are intended to be construed to bag Include preferred embodiment and fall into all changes and the amendment of this utility model scope.
Obviously, those skilled in the art can carry out various change and modification without deviating from this practicality to this utility model Novel spirit and scope.So, if of the present utility model these amendment and modification belong to this utility model claim and Within the scope of its equivalent technologies, then this utility model is also intended to comprise these change and modification.

Claims (5)

1. a capacitor, it is characterised in that including:
First electric capacity (C1) of symmetry arrangement and the second electric capacity (C2);
Described first electric capacity (C1) includes first group of metal connecting line (L1) and 2N+1 the first sub-electric capacity (C11~C1i), described the Two electric capacity (C2) include second group of metal connecting line (L2) and 2N+1 the second sub-electric capacity (C21~C2i);Wherein, N is positive integer, i It is sequentially connected with by described first group of metal connecting line (L1) for 2N+1, described 2N+1 the first sub-electric capacity (C11~C1i), described 2N+1 the second sub-electric capacity (C21~C2i) is sequentially connected with by described second group of metal connecting line (L2);Described 2N+1 first son Electric capacity (C11~C1i) and described 2N+1 the second sub-electric capacity (C21~C2i) are along described first electric capacity (C1) and described second electricity Hold axis of symmetry (a) cross arrangement of (C2);
The capacitance of described 2N+1 the first sub-electric capacity (C11~C1i) and with described 2N+1 the second sub-electric capacity (C21~C2i) The difference rate of capacitance sum is less than or equal to the first preset value, the parasitic capacitance capacitance of described first group of metal connecting line (L1) and described the The difference rate of the parasitic capacitance capacitance of two groups of metal connecting lines (L2) is less than or equal to the second preset value.
2. capacitor as claimed in claim 1, it is characterised in that arbitrary in described 2N+1 the first sub-electric capacity (C11~C1i) First sub-electric capacity is the most identical with parameter and the capacitance of arbitrary second sub-electric capacity in described 2N+1 the second sub-electric capacity (C21~C2i).
3. capacitor as claimed in claim 1, it is characterised in that described 2N+1 the first sub-electric capacity (C11~C1i) is with described 2N+1 the second sub-electric capacity (C21~C2i) one_to_one corresponding forms 2N+1 sub-electric capacity pair, and described 2N+1 sub-electric capacity is to according to setting Determine arrangement mode and stack gradually arrangement, so that arbitrary first sub-electric capacity adjacent capacitor is the second sub-electric capacity and arbitrary second son electricity Holding adjacent capacitor is the first sub-electric capacity.
4. capacitor as claimed in claim 3, it is characterised in that two sons of described 2N+1 sub-electric capacity centering arbitrary neighborhood Electric capacity between open circuit, described 2N+1 the arbitrary sub-electric capacity of sub-electric capacity centering the first sub-electric capacity to being comprised and the second sub-electric capacity Between open circuit.
5. the capacitor as described in claim as arbitrary in Claims 1 to 4, it is characterised in that described first group of metal connecting line (L1) bag Including 2N bar the first metal connecting line, described second group of metal connecting line (L2) includes 2N bar the second metal connecting line;Wherein, described 2N article One metal connecting line at least exists two metal connecting lines and uses the metal of different layers, described 2N bar the second metal connecting line is at least deposited The metal of different layers is used at two metal connecting lines.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932015A (en) * 2016-06-16 2016-09-07 武汉芯泰科技有限公司 Capacitor and layout method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932015A (en) * 2016-06-16 2016-09-07 武汉芯泰科技有限公司 Capacitor and layout method thereof

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