CN207719380U - With the passive resonator of solenoid type silicon hole inductance - Google Patents
With the passive resonator of solenoid type silicon hole inductance Download PDFInfo
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- CN207719380U CN207719380U CN201721542265.XU CN201721542265U CN207719380U CN 207719380 U CN207719380 U CN 207719380U CN 201721542265 U CN201721542265 U CN 201721542265U CN 207719380 U CN207719380 U CN 207719380U
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- silicon hole
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Abstract
The utility model discloses a kind of passive resonator with solenoid type silicon hole inductance.The utility model signal is inputted by input port, and an electric current part flows into coaxial through-silicon via and enters current return path, and another part flows into annular silicon hole array, then inflow current return path, most flowed out afterwards through output port.The passive RC resonators original paper that the utility model is constituted using coaxial through-silicon via capacitor and solenoid type silicon hole inductor, reduces element physical size.Capacitor is served as with coaxial through-silicon via, shorter interconnection length is possessed compared to the capacitor of conventional two-dimensional so that delay time, conductor losses are reduced.In addition the use of solenoid type silicon hole inductor is even more to greatly reduce the physical size of resonator, and substantially increase the properties of resonator.
Description
Technical field
The utility model belongs to passive electronic technical field, is related to a kind of microwave resonator element more particularly to one
Kind uses the passive resonator structure of silicon hole.
Background technology
With the rapid development of modern communication technology, the particularity of communication apparatus requirement makes people to communication equipment
Weight and size require it is higher and higher, especially in mobile communication system resonator miniaturization, lighting, low-power consumption in terms of
Requirement increasingly reinforce.With the continuous diminution of integrated device, wherein traditional resonator is in area occupied and packaging cost
On cannot be satisfied demand.
In recent years, with the rapid development of three dimensional integrated circuits, a kind of emerging ic manufacturing process silicon hole work
Skill is widely paid close attention to.It can provide vertical interconnection between the different stack layers of three dimensional integrated circuits.And silicon hole
Technology can provide the design freedom of bigger and better electric property designs different components.Silicon hole technology is introduced
Among the design of passive resonator, the size of passive resonator can further be reduced.
Invention content
The utility model is insufficient for current technology, provides one kind by coaxial through-silicon via capacitor and solenoid type silicon
The ultra-compact passive resonator that through-hole inductor is constituted.The utility model is specially passive RC parallel resonators, uses coaxial silicon
Through-hole makees capacitor, and annular silicon hole does inductor to design RC parallel resonators.
The utility model passive resonator is made of multiple element unit, and input and output port is located at the weight of base top
New layout layer.
The cell includes being laid out layer, the annular silicon hole array among substrate again positioned at base top
Layer is rebuild with coaxial through-silicon via, positioned at substrate bottom；
Annular silicon hole array is made of two row silicon hole arrays disposed in parallel, is equidistantly set including three per column array
The silicon hole set；First row silicon hole array is defined as first to third silicon hole from top to bottom, secondary series silicon hole array from
Up to giving a definition for the 4th to the 6th silicon hole；
Be laid out again layer end and the layer of the layout again end of coaxial through-silicon via of first silicon hole are connected by metal wire, and second
The layer end of layout again of silicon hole is connect with the layer of the layout again end of the 4th silicon hole by metal wire, and third silicon hole is again
Layout layer end connect by metal wire with the layer of the layout again end of the 5th silicon hole, the layer of the layout again end of the 6th silicon hole with together
The layer of the layout again end of axis silicon hole is connected by metal wire, the weight for rebuilding layer end and the 4th silicon hole of the first silicon hole
New structure layer end is connected by metal wire, and rebuild layer end and layer end that rebuild of the 5th silicon hole of the second silicon hole lead to
Metal wire connection is crossed, rebuild layer end and layer end that rebuild of the 6th silicon hole of third silicon hole are connected by metal wire
It connects；The layer end of layout again of coaxial through-silicon via as the signal input output end mouth of entire resonator or is connect into adjacent cells simultaneously
Signal output input mouth.
It is laid out layer, the annular silicon hole array among substrate again, positioned at substrate bottom positioned at base top
It rebuilds layer and constitutes solenoid type silicon hole inductor.The height and radius of spacing, silicon hole between silicon hole determine helical
The inductance value of tubular type silicon hole inductor.
It is laid out layer, the coaxial through-silicon via composition coaxial through-silicon via capacitance among substrate again positioned at base top
Device.Height, internal diameter and the outer diameter of coaxial through-silicon via determine coaxial through-silicon via condenser capacitance value.
Coaxial through-silicon via has metal inside, internal insulating layer, metal outer shroud and external insulation to constitute, wherein exterior insulation
Layer is used for isolating metal and silicon substrate, and the loop configuration of metal inside, internal insulating layer and metal outer shroud composition constitutes capacitor.
Internal insulating layer usually selects the material of high-k to increase the capacitance of capacitor.Solenoid type silicon hole inductor by
Vertical silicon through-hole array, base top are laid out layer again and substrate bottom rebuilds layer composition, by between change silicon hole
The structural parameters such as spacing, the height of silicon hole can obtain different inductance values.The capacitor and spiral shell that coaxial through-silicon via is constituted
The resonator of spool formula silicon hole inductor composition greatly reduces the physical area of resonator compared with traditional resonator,
And improve the properties of resonator.
Signal is inputted by input port, and an electric current part flows into coaxial through-silicon via metal inside by silicon hole direction, passes through
Metal outer shroud flows into current return path；It is logical that electric current another part flows into the first silicon hole, the 4th silicon hole, the second silicon successively
Hole, the 5th silicon hole, third silicon hole, the 6th silicon hole, then flow into return path；Last signal is exported through output port.
The utility model has the beneficial effects that：
The passive RC resonance that the utility model is constituted using coaxial through-silicon via capacitor and solenoid type silicon hole inductor
Device original paper reduces element physical size.Serve as capacitor with coaxial through-silicon via, compared to conventional two-dimensional capacitor possess compared with
Short interconnection length so that delay time, conductor losses are reduced.In addition the use of solenoid type silicon hole inductor is even more significantly
Reduce the physical size of resonator, and substantially increases the properties of resonator.
Description of the drawings
Fig. 1 is the structure of coaxial through-silicon via；
Fig. 2 is the structure of silicon hole；
Fig. 3 is the structure chart that base top is laid out layer again；
Fig. 4 is the structure chart of silicon hole array；
Fig. 5 is the structure chart that substrate bottom rebuilds layer；
Fig. 6 is the structure chart of solenoid type silicon hole inductor；
Fig. 7 is the structure chart of coaxial through-silicon via capacitor；
Fig. 8 is the structure chart of the first connecting substrate component；
Fig. 9 is the structure chart of the second connecting substrate component；
Figure 10 is the structure chart of the utility model passive resonator cell；
Figure 11 is the simulation result diagram of the utility model passive resonator element.
Specific implementation mode
Below in conjunction with attached drawing, the utility model is described in further detail.
The utility model passive resonator is made of multiple element unit, and input and output port is located at the weight of base top
New layout layer.
The cell includes solenoid type silicon hole inductor 600, and coaxial through-silicon via capacitor 700, first connects
Connect board unit 800 and the second connecting substrate component 900.Solenoid type silicon hole inductor 600 includes base top cloth again
Office's layer 300, two row silicon hole arrays 400 and substrate bottom rebuild layer 500.
Layout layer includes first to fourth substrate 301-304 again at the top of solenoid type silicon hole inductor base, above-mentioned
Substrate is in same plane and is mutually not connected to；Second substrate 302 is mutually parallel with third substrate 303.Substrate bottom is rebuild
Layer 500 includes first to third substrate 501-503, and above three substrate-parallel is arranged and is mutually not connected to.
First row silicon hole array include top connection metal derby 401-403, bottom connection metal derby 413-415, etc. between
First to third silicon hole 407-409 away from setting；Secondary series silicon hole array includes top connection metal derby 404-406, bottom
Portion connects the 4th to the 6th silicon hole 410-412 of metal derby 416-418, spaced set；First and second row silicon hole array is flat
Row is arranged and is mutually not connected to；First silicon hole, 407 top is equipped with top and connects metal derby 401, with top first substrate 301
Bottom surface connects；First silicon hole, 407 bottom is equipped with bottom and connects metal derby 413, connects with the top surface for connecting bottom first substrate 501
It connects；Second silicon hole, 408 top is equipped with top and connects metal derby 402, is connected with the bottom surface for connecting top second substrate 302；The
Two silicon holes, 408 bottom is equipped with bottom and connects metal derby 414, is connected with the top surface for connecting bottom second substrate 502；Third silicon
409 top of through-hole is equipped with top and connects metal derby 403, is connected with the bottom surface for connecting top third substrate 303；Third silicon hole
409 bottoms are equipped with bottom and connect metal derby 415, are connected with the top surface for connecting bottom third substrate 503；4th silicon hole 410 is pushed up
Portion is equipped with top and connects metal derby 404, is connected with the bottom surface for connecting top second substrate 302；4th silicon hole, 410 bottom is equipped with
Bottom connects metal derby 416, is connected with the top surface for connecting bottom first substrate 501；5th silicon hole, 411 top connects equipped with top
Metal derby 405 is connect, is connected with the bottom surface for connecting top third substrate 303；5th silicon hole, 411 bottom is equipped with bottom connection gold
Belong to block 417, is connected with the top surface for connecting bottom second substrate 502；6th silicon hole, 412 top is equipped with top and connects metal derby
406, it is connected with the bottom surface for connecting top tetrabasal 304；6th silicon hole, 412 bottom is equipped with bottom and connects metal derby 418, with
Connect the top surface connection of bottom third substrate 503.Coaxial through-silicon via capacitor 700 is followed successively by base top from top to bottom
Top substrate layer 701, connects metal derby 702, and base top underlying substrate 703 connects metal derby 704 and coaxial through-silicon via 705.Base
701 bottom surface of top substrate layer is equipped with connection metal derby 702 at the top of bottom, is connect with the top surface of substrate bottom underlying substrate 703；Substrate top
703 bottom surface of subordinate's laminar substrate is equipped with connection metal derby 704, connects coaxial through-silicon via 705.
First connecting substrate component 800 includes the first to the second connecting substrate of base top 801-802, above-mentioned two substrates phase
Mutually vertical and interconnection；One end of base top first substrate 801 is connect with first substrate 301, the other end and base top
One end of second substrate 802 connects；One end of the other end and base top top substrate layer 701 of base top second substrate 802
Connection.
Second connecting substrate component 900 includes base top third to the 6th connecting substrate 901-904；Base top third
Substrate 901 and base top tetrabasal 902 are connected with each other and orthogonal, and base top third substrate 901 is located at substrate top
902 left side top of portion's tetrabasal；Five substrate 903 of base top and base top third substrate 901 be mutually parallel and mutually not
Connection, the 5th substrate 903 of base top and base top tetrabasal 902 are connected with each other and are mutually perpendicular to, base top the 5th
Substrate 903 is located at 902 right side top of base top tetrabasal；The 6th substrate 904 of base top is located at the 5th base of base top
903 top surface of plate.One end of base top third substrate 901 is connect with the other end of base top underlying substrate 703, substrate top
The other end of portion's third substrate 901 is connect with one end of base top tetrabasal 902, base top tetrabasal 902 it is another
One end is connect with one end of the 5th substrate 903 of base top, and the other end top surface of the 5th substrate 903 of base top is equipped with substrate top
The 6th substrate 904 of portion, the 6th substrate 904 of base top are located at below the left side of the tenth substrate 310.
Fig. 1 is the section schematic diagram of existing coaxial through-silicon via 100, by metal inside 101, internal insulating layer 102, metal
Outer shroud 103 and external insulation 104 are constituted through substrate 105.Metal inside 101 and metal outer shroud 103 can be copper, tungsten or more
Crystal silicon is constituted.The loop configuration that metal inside 101, internal insulating layer 102 and metal outer shroud 103 are constituted constitutes capacitor.It is internal
Insulation 102 selects high dielectric constant materials to increase capacitance layer by layer.To prevent leakage current, in coaxial metal structure and substrate
Layer of oxide layer 104 can be formed between 105 is used as insulating layer.
Fig. 2 is the section schematic diagram of existing silicon hole 200, has metal inside 201 and insulating layer 202 to run through substrate 203
It constitutes.Metal inside 201 can be copper, tungsten or polysilicon.It, can shape between metal inside 201 and substrate 203 to prevent leakage current
It is used as insulating layer at layer of oxide layer 202.
Fig. 3 is the structure chart for being laid out layer 300 at the top of solenoid type silicon hole inductor base again.Top first to fourth
Substrate is in same plane and is mutually not connected to.
Fig. 4 is the structure chart of silicon hole array 400.Connection metal derby 401 is for connecting 407 top surface of silicon hole and top
301 bottom surface of first substrate；Connection metal derby 402 is for connecting 305 bottom surface of 408 top surface of silicon hole and the 5th substrate of top；Connection
Metal derby 403 is for connecting 309 bottom surface of 409 top surface of silicon hole and the 9th substrate of top；Connection metal derby 404 is logical for connecting silicon
302 bottom surface of 410 top surface of hole and top second substrate；Connection metal derby 405 is for connecting 411 top surface of silicon hole and top the 6th
306 bottom surface of substrate；Connection metal derby 406 is for connecting 310 bottom surface of 412 top surface of silicon hole and the tenth substrate of top；Connect metal
Block 413 is for connecting 501 top surface of 407 bottom surface of silicon hole and bottom first substrate；Connection metal derby 414 is for connecting silicon hole
502 top surface of 408 bottom surfaces and bottom second substrate；Connection metal derby 415 is for connecting 409 bottom surface of silicon hole and bottom third substrate
503 top surfaces；Connection metal derby 416 is for connecting 501 top surface of 410 bottom surface of silicon hole and bottom first substrate；Connect metal derby 417
For connecting 502 top surface of 422 bottom surface of silicon hole and bottom second substrate；Connection metal derby 418 is for connecting 412 bottom of silicon hole
503 top surface of face and bottom third substrate.
Fig. 5 is the structure chart that substrate bottom rebuilds layer 500；Bottom first is arranged in parallel to third substrate 501-503
And it is mutually not connected to.
Fig. 6 is the structure chart of solenoid type silicon hole inductor 600；Solenoid type silicon hole inductor 600 is by silicon hole
It is connected and composed with horizontal metal wire.Solenoid type silicon hole inductor can be by changing spacing, silicon hole between silicon hole
The structural parameters such as height obtain different inductance values, and business simulation software can be passed through carry out simulating, verifying.Pass through tune
The dimensional parameters of whole silicon hole carry out the required inductance of selective resonance device.
Fig. 7 is the structure chart of coaxial through-silicon via capacitor 700.It connects 702 left side of metal derby and is equipped with input port 706, even
It connects 702 right side of metal derby and is equipped with output port 707；Connection metal derby 702 for connect 701 bottom surface of base top top substrate layer and
702 top surface of base top underlying substrate；Connection metal derby 703 is for connecting 702 bottom surface of base top underlying substrate and coaxial silicon
705 top surface of through-hole.
Fig. 8 is the structure chart of the first connecting substrate component 800；The board unit for connect 301 left side of first substrate and
Behind base top top substrate layer 701.
Fig. 9 is the structure chart of the second connecting substrate component 900；Change board unit for connect 310 bottom surface of the tenth substrate with
703 front of base top underlying substrate.
Figure 10 is the structure chart of the utility model passive resonator cell 1000.The passive resonator of the utility model
There is multiple element unit composition, what input and output port was located at base top rebuilds layer；The cell includes spiral shell
Spool formula silicon hole inductor 600, coaxial through-silicon via capacitor 700, the first connecting substrate component 800 and second substrate component
900.Signal is inputted by input port 706, and electric current flows into top top substrate layer 701, and an electric current part is flowed by silicon hole direction
705 metal inside 101 of coaxial through-silicon via passes through underlying substrate 703 at the top of 103 inflow current return path of metal outer shroud；Electric current
Another part flows into the base top first substrate of solenoid type silicon hole inductor 600 by the first connecting substrate component 800
301；Electric current flows into silicon hole 407 by base top first substrate 301, and electric current flows into bottom first by 407 direction of silicon hole
Substrate 501, and base top second substrate 302 is flowed by silicon hole 410；Electric current presses 302 direction of base top second substrate
Silicon hole 408 is flowed into, and silicon hole 411 is flowed by substrate bottom second substrate 502；Electric current is flowed by 411 direction of silicon hole
Base top third substrate 303, and substrate bottom third substrate 503 is flowed by silicon hole 409；Electric current presses substrate bottom 503
Direction flows into silicon hole 412, and flows into the second connecting substrate component 900 by base top tetrabasal 304；Electric current passes through
Two connecting substrate components 900 flow into return path base top underlying substrate 703.Most exported afterwards through output port 707.
Figure 11 is the simulation result diagram of the utility model passive resonator.It is emulated to obtain nothing using business simulation software
The transfer curve of source resonator.The utility model passive resonator known to transfer curve realizes resonance well
The function of device, and compared to traditional filter, the utility model makes filter volume greatly reduce.
Claims (6)
1. with the passive resonator of solenoid type silicon hole inductance, it is made of multiple element unit, input and output port position
In the layout layer again of base top, it is characterised in that cell includes positioned at the layer of layout again of base top, positioned at base
Annular silicon hole array among bottom rebuilds layer with coaxial through-silicon via, positioned at substrate bottom；
Annular silicon hole array is made of two row silicon hole arrays disposed in parallel, includes three spaced sets per column array
Silicon hole；
Be laid out again layer end and the layer of the layout again end of coaxial through-silicon via of first silicon hole are connected by metal wire, and the second silicon is logical
Again the layout layer end in hole is connect with the layer of the layout again end of the 4th silicon hole by metal wire, the layout again of third silicon hole
Layer end is connect with the layer of the layout again end of the 5th silicon hole by metal wire, the layer of layout again end and the coaxial silicon of the 6th silicon hole
The layer of the layout again end of through-hole is connected by metal wire, the structure again for rebuilding layer end and the 4th silicon hole of the first silicon hole
Build-up layers end is connected by metal wire, and rebuild layer end and layer end that rebuild of the 5th silicon hole of the second silicon hole pass through gold
Belong to line connection, layer end that rebuild of third silicon hole is connect with layer end that rebuild of the 6th silicon hole by metal wire；It will
The layer end of layout again of coaxial through-silicon via as the signal input output end mouth of entire resonator or connects the letters of adjacent cells simultaneously
Number output input mouth.
2. using the passive resonator of solenoid type silicon hole inductance as described in claim 1, it is characterised in that be located at substrate
Again be laid out layer, the annular silicon hole array among substrate, the layer that rebuilds positioned at substrate bottom at top constitute spiral shell
Spool formula silicon hole inductor；The height and radius of spacing, silicon hole between silicon hole determine solenoid type silicon hole inductor
Inductance value.
3. using the passive resonator of solenoid type silicon hole inductance as described in claim 1, it is characterised in that be located at substrate
Again be laid out layer, the coaxial through-silicon via among substrate, the layer that rebuilds positioned at substrate bottom at top constitute coaxial silicon
Through-hole capacitor；Height, internal diameter and the outer diameter of coaxial through-silicon via determine coaxial through-silicon via condenser capacitance value.
4. using the passive resonator of solenoid type silicon hole inductance as described in claim 1, it is characterised in that coaxial silicon is logical
Hole is made of metal inside, internal insulating layer, metal outer shroud and external insulation through substrate；Metal inside, internal insulating layer
Capacitor is constituted with the loop configuration that metal outer shroud is constituted.
5. using the passive resonator of solenoid type silicon hole inductance as claimed in claim 4, it is characterised in that built-in electrical insulation
Layer choosing increases capacitance with high dielectric constant material.
6. as described in claim 1 use solenoid type silicon hole inductance passive resonator, it is characterised in that silicon hole by
Metal inside and insulating layer are constituted through substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721542265.XU CN207719380U (en) | 2017-11-17 | 2017-11-17 | With the passive resonator of solenoid type silicon hole inductance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721542265.XU CN207719380U (en) | 2017-11-17 | 2017-11-17 | With the passive resonator of solenoid type silicon hole inductance |
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| Publication Number | Publication Date |
|---|---|
| CN207719380U true CN207719380U (en) | 2018-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721542265.XU Expired - Fee Related CN207719380U (en) | 2017-11-17 | 2017-11-17 | With the passive resonator of solenoid type silicon hole inductance |
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| CN (1) | CN207719380U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107819182A (en) * | 2017-11-17 | 2018-03-20 | 杭州电子科技大学 | A kind of novel passive resonator with solenoid type silicon hole inductance |
-
2017
- 2017-11-17 CN CN201721542265.XU patent/CN207719380U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107819182A (en) * | 2017-11-17 | 2018-03-20 | 杭州电子科技大学 | A kind of novel passive resonator with solenoid type silicon hole inductance |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180810 Termination date: 20201117 |
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| CF01 | Termination of patent right due to non-payment of annual fee |