CN205741278U - A kind of polycrystalline silicon ingot or purifying furnace - Google Patents
A kind of polycrystalline silicon ingot or purifying furnace Download PDFInfo
- Publication number
- CN205741278U CN205741278U CN201620500492.5U CN201620500492U CN205741278U CN 205741278 U CN205741278 U CN 205741278U CN 201620500492 U CN201620500492 U CN 201620500492U CN 205741278 U CN205741278 U CN 205741278U
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- heater
- crucible
- argon
- silicon ingot
- polycrystalline silicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052786 argon Inorganic materials 0.000 claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 65
- 229910002804 graphite Inorganic materials 0.000 claims description 51
- 239000010439 graphite Substances 0.000 claims description 51
- 238000009413 insulation Methods 0.000 claims description 44
- 210000001320 hippocampus Anatomy 0.000 claims description 25
- 238000010792 warming Methods 0.000 claims description 25
- 239000000919 ceramic Substances 0.000 claims description 18
- 239000000835 fiber Substances 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000009940 knitting Methods 0.000 claims description 12
- 230000003028 elevating effect Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052571 earthenware Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 36
- 229910052710 silicon Inorganic materials 0.000 abstract description 36
- 239000010703 silicon Substances 0.000 abstract description 36
- 230000000694 effects Effects 0.000 abstract description 9
- 229920005591 polysilicon Polymers 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000002210 silicon-based material Substances 0.000 description 10
- 238000005266 casting Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 210000003437 trachea Anatomy 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model discloses a kind of polycrystalline silicon ingot or purifying furnace being capable of energy-saving and emission-reduction.This polycrystalline silicon ingot or purifying furnace is by arranging gas preheating unit in air inlet pipe, the argon entered in body of heater can be heated by gas preheating unit, temperature in body of heater is caused large effect in entering body of heater by the argon avoiding temperature relatively low, during polycrystalline silicon ingot or purifying furnace works, can ensure that the temperature in body of heater is maintained in a stable scope, avoid the growth of polycrystal silicon ingot is caused large effect, additionally, air pump is utilized the high temperature that aspirating hole is discharged to give up argon by air entraining pipe importing cavity, utilize the high temperature argon that gives up that new argon is preheated, not only can make full use of high temperature to give up the heat contained in argon, realize energy-saving and emission-reduction, simultaneously, the argon being preheated is passed through in body of heater, the heat that argon is taken away in body of heater can be reduced, realize energy-saving and emission-reduction further.It is suitable in production of polysilicon apparatus field popularization and application.
Description
Technical field
This utility model relates to production of polysilicon apparatus field, especially a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
Solaode can convert light energy into electric energy, is an emphasis of modern Energy-saving Society development.According to matrix
The difference of material, existing solaode is divided into polysilicon solar cell, monocrystaline silicon solar cell and class monocrystal silicon too
Sun can battery.Wherein, the transformation efficiency of monocrystaline silicon solar cell is high, but production cost is the highest, polysilicon solar cell
Transformation efficiency 1%-2% lower than monocrystaline silicon solar cell, but its production cost is the lowest, and class monocrystaline silicon solar cell is to be situated between
Battery between monocrystalline silicon battery and polysilicon solar cell.Consider, solaode in the market still with
Polysilicon solar cell is main.
The polycrystal silicon ingot being currently used for producing polysilicon solar cell generally uses casting ingot process, casting ingot process one
As realized by polycrystalline silicon ingot or purifying furnace, existing polycrystalline silicon ingot or purifying furnace includes body of heater, and body of heater is provided with aspirating hole, described
Being provided with subiculum warming plate and thermal insulation cover in body of heater, thermal insulation cover is placed on subiculum warming plate, and thermal insulation cover is with subiculum warming plate altogether
With constituting insulation cage, described thermal insulation cover connects and has the elevating lever that thermal insulation cover can be made to move up and down, described insulation
Crucible, crucible guard boards, graphite base plate, graphite cover plate, side heater, top heater, heat exchange platform, institute it is provided with in cage
Stating graphite base plate to be placed on heat exchange platform, crucible is placed on graphite base plate, and crucible guard boards is arranged on outside crucible, sidepiece
Heater is arranged on the outside of crucible guard boards, and graphite cover plate is arranged on above crucible, and top heater is arranged on graphite cover plate
Side, described heat exchange platform is fixed on bottom of furnace body by graphite column, and the upper end of crucible guard boards is provided with exhaust emissions hole, also
Including air inlet pipe, described air inlet pipe stretches in crucible after sequentially passing through body of heater, thermal insulation cover, top heater, graphite cover plate.
Current casting ingot process, is first after spraying-stocking process, enters back into ingot casting operation.
Spraying: can react with crucible after silicon material high temperature melting, introduces impurity, and causes viscous pot, affect silicon ingot
Quality, so needing to spray one layer of Silicon nitride solution between crucible and silicon material, utilizes silicon nitride can effectively isolate silicon material
With crucible, after Silicon nitride solution has sprayed, then carry out high temperature drying, the moisture in Silicon nitride solution evaporated, it is possible to
Crucible internal walls is made to adhere to one layer of silicon nitride coating.
Charging: after crucible is dried, by fragmentary silicon material, in order, requires and silicon material is loaded in crucible by weight.
The crucible of charged can be carried out next step casting ingot process, first charged crucible is loaded ingot furnace
In body of heater, after installing on request, by ingot furnace closing lid, the ingot furnace that closing lid is later, it is formed for a chamber sealed, will install
The sealed crucible of silicon material is inside ingot furnace, and bring into operation casting ingot process, and whole casting ingot process divides 6 processes, evacuation-add
Heat-fusing-long brilliant-annealing-cooling.
S11, evacuation: the air in body of heater is taken away from aspirating hole, during preventing from heating up the oxygen in air with
Silicon material generation oxidation reaction, affects Ingot quality.Evacuation is to utilize vacuum pump to be extracted out by the air in body of heater, until reaching to set
Standby unlatching requirement.
S12, heating: after evacuation completes, enter the heating period, and heating is to make silicon material be rapidly heated close to molten
Changing temperature, now the environment in furnace chamber is vacuum environment, can be conducive to will be attached to the steam on silicon material surface, true by taking out
Empty method is extracted out, and is rapidly heated.
S13, fusing: in fusion process, need to fill argon in the chamber sealed, it is to avoid be attached to the nitrogen of crucible internal walls
SiClx coating is decomposed reaction, and argon is to be filled with in body of heater by air inlet pipe.After fusing starts, start inflation in body of heater, press
After process is inflated to authorized pressure, start dynamically to keep.
S14, long crystalline substance: silicon material melt, proceed by long crystalline substance, the process of long crystalline substance be by the thermal insulation cover of furnace interior to
Rising, liquid-state silicon starts heat radiation from bottom, and the liquid-state silicon of bottom becomes solid-state silicon, and along with the rising of thermal insulation cover and heat
Scatter and disappear, the most upwards solidify, until whole silicon ingot has solidified.
S15, annealing: owing to long brilliant process starts in bottom, and rise with thermal insulation cover, until top, so push up the end it
Between because the reason of heat radiation, will there is certain temperature difference, produce internal stress.The effect of annealing is exactly to ensure isoperibol
Under, eliminate temperature difference, thus eliminate internal stress.
S16, cooling: in furnace chamber, silicon ingot is cooled fast to tapping temperature.
Described polycrystalline silicon ingot or purifying furnace includes the body of heater with mezzanine space, and body of heater is provided with aspirating hole, described body of heater
Inside being provided with subiculum warming plate and thermal insulation cover, thermal insulation cover is placed on subiculum warming plate, thermal insulation cover and the common structure of subiculum warming plate
Becoming insulation cage, described thermal insulation cover connects has the elevating lever that thermal insulation cover can be made to move up and down, in described insulation cage
It is provided with crucible, crucible guard boards, graphite base plate, graphite cover plate, side heater, top heater, heat exchange platform, described stone
Ink base plate is placed on heat exchange platform, and crucible is placed on graphite base plate, and crucible guard boards is arranged on outside crucible, and sidepiece heats
Device is arranged on the outside of crucible guard boards, and graphite cover plate is arranged on above crucible, and top heater is arranged on above graphite cover plate, institute
Stating heat exchange platform and be fixed on bottom of furnace body by graphite column, the upper end of crucible guard boards is provided with exhaust emissions hole, also includes
Air inlet pipe, one end of described air inlet pipe is connected with argon gas source, and the other end sequentially passes through body of heater, thermal insulation cover, top heater, graphite
Stretching into after cover plate in crucible, first this polycrystalline silicon ingot or purifying furnace there is problems in that in actual use, casts at polysilicon
During ingot furnaceman makees, the temperature in body of heater need to be maintained in a stable scope, due to existing polycrystalline silicon ingot or purifying furnace
It is all directly the argon of room temperature to be passed through in body of heater, owing to the temperature in body of heater is higher, the height of usual Dou Shiji Baidu, room temperature
Argon enter in body of heater and the temperature in body of heater will certainly be caused large effect, if temperature fluctuation changes greatly in body of heater
The growth of silicon ingot can be caused large effect, the Ingot quality finally grown up to also can level uneven.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of polycrystalline silicon ingot or purifying furnace being capable of energy-saving and emission-reduction.
This utility model solves its technical problem and be the technical scheme is that this polycrystalline silicon ingot or purifying furnace, including having folder
The body of heater of sheaf space, body of heater is provided with aspirating hole, is provided with subiculum warming plate and thermal insulation cover in described body of heater, and thermal insulation cover is placed
On subiculum warming plate, thermal insulation cover and subiculum warming plate collectively form insulation cage, and described thermal insulation cover connects to be had and can make
The elevating lever that thermal insulation cover moves up and down, be provided with in described insulation cage crucible, crucible guard boards, graphite base plate, graphite cover plate,
Side heater, top heater, heat exchange platform, described graphite base plate is placed on heat exchange platform, and crucible is placed on stone
On ink base plate, crucible guard boards is arranged on outside crucible, and side heater is arranged on the outside of crucible guard boards, and graphite cover plate is arranged on
Above crucible, top heater is arranged on above graphite cover plate, and described heat exchange platform is fixed at the bottom of body of heater by graphite column
Portion, the upper end of crucible guard boards is provided with exhaust emissions hole, also includes that air inlet pipe, one end of described air inlet pipe are connected with argon gas source,
The other end stretches in crucible after sequentially passing through body of heater, thermal insulation cover, top heater, graphite cover plate, and described air inlet pipe is provided with
Gas preheating unit, described gas preheating unit includes airtight cavity, is provided with heat exchanger tube, described heat exchanger tube in described cavity
To extend respectively to cavity outer and connect with air inlet pipe at two ends, the argon in described argon gas source successively along air inlet pipe, heat exchanger tube, enter
Trachea flows in crucible, and described heat exchanger tube seals with the junction of cavity, and described cavity connects air entraining pipe and exhaustor, institute
The one end stating air entraining pipe connects with the aspirating hole arranged on body of heater, and the other end of air entraining pipe connects with cavity inside, described bleed
Being provided with air pump on pipe, described exhaustor connects with cavity inside.
Further, described heat exchanger tube is metal coil pipe.
Further, described heat exchanger tube uses copper pipe to be made.
Further, described graphite cover plate is provided with multiple through hole.
Further, the uniform setting of the plurality of through hole.
Further, described bottom of furnace body is provided with overflow blanket, and described overflow blanket is four-layer structure, the most successively
For knitting ceramic fibre blanket layer, knitting ceramic fibre blanket layer, ceramic fibre blanket layer, carbon felt layer, described knitting ceramic fibre blanket layer
Thickness be 10mm, the thickness of knitting ceramic fibre blanket layer be 10mm, the thickness of ceramic fibre blanket layer be 25mm, the thickness of carbon felt layer
Degree is 10mm.
Further, the upper surface of described overflow blanket is provided with overflow silk.
Further, described subiculum warming plate is provided with multiple spout hole.
Further, it is provided with carbon felt between described crucible and crucible guard boards.
The beneficial effects of the utility model are: this polycrystalline silicon ingot or purifying furnace passes through to arrange gas preheating unit in air inlet pipe,
The argon entered in body of heater can be heated by gas preheating unit, it is to avoid to body of heater in the argon entrance body of heater that temperature is relatively low
Interior temperature causes large effect, during polycrystalline silicon ingot or purifying furnace works, it is ensured that the temperature in body of heater is maintained at
In one stable scope, it is to avoid the growth to polycrystal silicon ingot causes large effect, it is ensured that the Ingot quality finally grown up to reaches
To higher quality level, it addition, utilize the air pump high temperature that aspirating hole is discharged is given up argon by air entraining pipe importing cavity,
Utilize the high temperature argon that gives up that new argon is preheated, not only can make full use of high temperature and give up the heat contained in argon, it is achieved
Energy-saving and emission-reduction, meanwhile, the argon being preheated is passed through in body of heater, it is possible to reduce argon takes away the heat in body of heater, realizes further
Energy-saving and emission-reduction, reduce the production cost of silicon ingot.
Accompanying drawing explanation
Fig. 1 is the structural representation of this utility model polycrystalline silicon ingot or purifying furnace；
Figure is labeled as: body of heater 1, aspirating hole 2, subiculum warming plate 3, thermal insulation cover 4, elevating lever 5, crucible 6, crucible guard boards 7,
Graphite base plate 8, graphite cover plate 9, side heater 10, top heater 11, heat exchange platform 12, exhaust emissions hole 13, air inlet
Pipe 14, argon gas source 15, gas preheating unit 16, cavity 161, heat exchanger tube 162, air entraining pipe 163, exhaustor 164, air pump 165,
Through hole 17, overflow blanket 18, spout hole 20, carbon felt 21, graphite column 22.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is further illustrated.
As it is shown in figure 1, this polycrystalline silicon ingot or purifying furnace, including having the body of heater 1 of mezzanine space, body of heater 1 is provided with aspirating hole
2, be provided with subiculum warming plate 3 and thermal insulation cover 4 in described body of heater 1, thermal insulation cover 4 is placed on subiculum warming plate 3, thermal insulation cover 4 with
Subiculum warming plate 3 collectively forms insulation cage, and described thermal insulation cover 4 connects the lifting that thermal insulation cover 4 can be made to move up and down
Bar 5, is provided with crucible 6, crucible guard boards 7, graphite base plate 8, graphite cover plate 9, side heater 10, top in described insulation cage
Portion's heater 11, heat exchange platform 12, described graphite base plate 8 is placed on heat exchange platform 12, and crucible 6 is placed on graphite base plate
On 8, crucible guard boards 7 is arranged on outside crucible 6, and side heater 10 is arranged on the outside of crucible guard boards 7, and graphite cover plate 9 is arranged
Above crucible 6, top heater 11 is arranged on above graphite cover plate 9, and described heat exchange platform 12 is solid by graphite column 22
Being scheduled on bottom body of heater 1, the upper end of crucible guard boards 7 is provided with exhaust emissions hole 13, also includes air inlet pipe 14, described air inlet pipe 14
One end is connected with argon gas source 15, and the other end stretches into earthenware after sequentially passing through body of heater 1, thermal insulation cover 4, top heater 11, graphite cover plate 9
In crucible 6, described air inlet pipe 14 being provided with gas preheating unit 16, described gas preheating unit 16 includes airtight cavity 161,
Being provided with heat exchanger tube 162 in described cavity 161, the two ends of described heat exchanger tube 162 extend respectively to outside cavity 161 and and air inlet pipe
14 connections, the argon in described argon gas source 15 flows in crucible 6 along air inlet pipe 14, heat exchanger tube 162, air inlet pipe 14 successively, described
Heat exchanger tube 162 seals with the junction of cavity 161, and described cavity 161 connects air entraining pipe 163 and exhaustor 164, described in draw
One end of trachea 163 connects with the aspirating hole 2 arranged on body of heater 1, and the other end of air entraining pipe 163 is internal with cavity 161 to be connected, institute
Stating and be provided with air pump 165 on air entraining pipe 163, described exhaustor 164 is internal with cavity 161 to be connected.By in air inlet pipe 14
Arranging gas preheating unit 16, the argon entered in body of heater 1 can be heated by gas preheating unit 16, it is to avoid temperature is relatively low
Argon enter body of heater 1 in the temperature in body of heater 1 is caused large effect, during polycrystalline silicon ingot or purifying furnace works, can
To ensure that the temperature in body of heater 1 is maintained in a stable scope, it is to avoid the growth to polycrystal silicon ingot causes large effect,
Ensure that the Ingot quality finally grown up to reaches higher quality level, it addition, utilize the height that aspirating hole 2 is discharged by air pump 165
The useless argon of temperature is imported in cavity 161 by air entraining pipe 163, utilizes the high temperature argon that gives up to preheat new argon, the most permissible
Make full use of high temperature to give up the heat contained in argon, it is achieved energy-saving and emission-reduction, meanwhile, the argon being preheated is passed through in body of heater 1, permissible
Reduce argon and take away the heat in body of heater 1, realize energy-saving and emission-reduction further, reduce the production cost of silicon ingot.
In order to improve heat exchange efficiency, extending heat-exchange time, described heat exchanger tube 162 is metal coil pipe.In order to improve further
Heat exchange efficiency, described heat exchanger tube 162 uses copper pipe to be made.
During long crystalline substance, crucible 6 is internal needs have certain thermograde from top to bottom, i.e. the temperature in crucible 6 from
On be gradually reduced downwards, thermograde change is the most obvious, and the speed of growth of ingot casting is the fastest, and the temperature of crucible 6 internal upper part is mainly
Thering is provided by top heater 11, the heat of top heater 11 is delivered in crucible 6 through after graphite cover plate 9 again, owing to passing through
The obstruct of graphite cover plate 9, the temperature above graphite cover plate 9 is higher than the temperature below graphite cover plate 9, due to existing polysilicon
Side heater 10 and the top heater 11 of ingot furnace are all uniformly controlled, and in crystal growing stage, temperature must control
In certain scope, here it is make side heater 10 all can only work with identical power, the most just with top heater 11
It is to say that the heat that side heater 10 and top heater 11 provide is certain, higher to the temperature making crucible 6 internal upper part,
It is necessary for enabling more heat to be delivered in crucible 6 through graphite cover plate 9, so that thermograde change is obvious in crucible 6,
This utility model provides a kind of simple and effective way and changes obvious purpose, i.e. in institute to thermograde in reaching crucible 6
State and on graphite cover plate 9, be provided with multiple through hole 17, by arranging multiple through hole 17 on graphite cover plate 9, top heater 11
Heat can be unseparated be delivered in crucible 6 by through hole 17 so that the temperature of crucible 6 internal upper part is for original
Can increase, so that the thermograde change in crucible 6 is substantially, and then increase the speed of growth of ingot casting, this mode
Only need to beat several through hole 17 on original graphite cover plate 9, substantially without increasing cost, reequip the most very convenient simultaneously.For
Make variations in temperature more uniform, the described uniform setting of through hole 17.
In use, it some times happens that the phenomenon of silicon hydrorrhea stream, once there is silicon hydrorrhea stream, overflow in polycrystalline silicon ingot or purifying furnace
The silicon liquid flowed out can flow on the subiculum warming plate 3 of lower section along heat exchange platform 12, and then silicon liquid is again from the limit of subiculum warming plate 3
Edge drops onto the bottom of body of heater 1, and owing to silicon liquid temp is higher, silicon liquid is easy to be burnt thus accidents caused by body of heater 1, in order to keep away
Body of heater 1 is burnt by the silicon liquid exempting from overflow, is provided with overflow blanket 18 bottom described body of heater 1, the silicon liquid that overflow is gone out by overflow blanket 18 with
Body of heater 1 separates, and effectively prevent silicon liquid and is burnt by body of heater 1, even if overflow blanket 18 is burnt by silicon liquid, now the temperature of silicon liquid is the most relatively
Low, body of heater 1 will not be caused the biggest loss.In order to prevent silicon liquid from being burnt by overflow blanket 18, described overflow blanket 18 is four layers of knot
Structure, is followed successively by knitting ceramic fibre blanket layer, knitting ceramic fibre blanket layer, ceramic fibre blanket layer, carbon felt layer, described pin from top to bottom
The thickness knitting ceramic fibre blanket layer is 10mm, the thickness of knitting ceramic fibre blanket layer is 10mm, the thickness of ceramic fibre blanket layer is
25mm, the thickness of carbon felt layer are 10mm.
Whether there occurs silicon hydrorrhea stream to make operator know in time, the upper surface of described overflow blanket 18 is provided with excessive
, once there is silicon hydrorrhea stream in stream silk, the silicon liquid that overflow goes out falls will will be arranged on overflowing of overflow blanket 18 surface after overflow blanket 18
Stream silk blows, and overflow silk can send alarm signal after blowing, and prompting operator carry out associative operation.Silicon liquid stream due to overflow
After subiculum warming plate 3, the edge of subiculum warming plate 3 to be flowed to could continue to dirty, thus causes overflow phenomena to occur one
Just can monitor after the section time, which adds the probability having an accident, therefore, in order to monitor whether quickly to occur
Silicon hydrorrhea flow phenomenon, described subiculum warming plate 3 is provided with multiple spout hole 20, excessive by arranging on subiculum warming plate 3
Discharge orifice 20, when directly from the overflow blanket 18 that spout hole 20 flows to lower section, and then setting after silicon liquid stream to subiculum warming plate 3
Put the overflow silk arranged on overflow blanket 18 to blow, thus reach the purpose of fast monitored.
It addition, in order to make crucible 6 be uniformly heated, be provided with carbon felt 21, side between described crucible 6 and crucible guard boards 7
The heat of portion's heater 10 passes to crucible 6 through carbon felt 21 again through after crucible guard boards 7, due to carbon felt 21 have preferably every
Hot heat-insulating property, therefore, heat will not fast strikethrough carbon felt 21 be delivered in crucible 6, and heat so can be made through carbon felt
Obtain homogenizing when 21, so that crucible 6 is heated evenly, the qualification rate of product can be improved.
Claims (9)
1. a polycrystalline silicon ingot or purifying furnace, including having the body of heater (1) of mezzanine space, body of heater (1) is provided with aspirating hole (2), institute
Being provided with subiculum warming plate (3) and thermal insulation cover (4) in stating body of heater (1), thermal insulation cover (4) is placed on subiculum warming plate (3), insulation
Cover (4) and subiculum warming plate (3) collectively form insulation cage, and the upper connection of described thermal insulation cover (4) has can be made on thermal insulation cover (4)
The elevating lever (5) of lower movement, is provided with crucible (6), crucible guard boards (7), graphite base plate (8), graphite in described insulation cage
Cover plate (9), side heater (10), top heater (11), heat exchange platform (12), described graphite base plate (8) is placed on heat
On switching plane (12), crucible (6) is placed on graphite base plate (8), and crucible guard boards (7) is arranged on crucible (6) outside, and sidepiece adds
Hot device (10) is arranged on the outside of crucible guard boards (7), and graphite cover plate (9) is arranged on crucible (6) top, and top heater (11) sets
Putting in graphite cover plate (9) top, described heat exchange platform (12) is fixed on body of heater (1) bottom, crucible by graphite column (22)
The upper end of backplate (7) is provided with exhaust emissions hole (13), also includes air inlet pipe (14), one end of described air inlet pipe (14) and argon
Source (15) is connected, and the other end sequentially passes through body of heater (1), thermal insulation cover (4), top heater (11), graphite cover plate stretch into earthenware after (9)
In crucible (6), it is characterised in that: it is provided with gas preheating unit (16), described gas preheating unit in described air inlet pipe (14)
(16) include airtight cavity (161), in described cavity (161), be provided with heat exchanger tube (162), the two of described heat exchanger tube (162)
End extends respectively to cavity (161) and outward and connects with air inlet pipe (14), and the argon in described argon gas source (15) is successively along air inlet pipe
(14), heat exchanger tube (162), air inlet pipe (14) flow in crucible (6), described heat exchanger tube (162) is close with the junction of cavity (161)
Envelope, the upper connection of described cavity (161) has air entraining pipe (163) and exhaustor (164), one end of described air entraining pipe (163) and body of heater
(1) upper aspirating hole (2) connection arranged, the other end of air entraining pipe (163) is internal with cavity (161) to be connected, described air entraining pipe
(163) being provided with air pump (165) on, described exhaustor (164) is internal with cavity (161) to be connected.
2. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterised in that: described heat exchanger tube (162) is metal coil pipe.
3. polycrystalline silicon ingot or purifying furnace as claimed in claim 2, it is characterised in that: described heat change pipe (162) use copper pipe making and
Become.
4. polycrystalline silicon ingot or purifying furnace as claimed in claim 3, it is characterised in that: it is provided with multiple logical on described graphite cover plate (9)
Hole (17).
5. polycrystalline silicon ingot or purifying furnace as claimed in claim 4, it is characterised in that: the plurality of through hole (17) uniform setting.
6. polycrystalline silicon ingot or purifying furnace as claimed in claim 5, it is characterised in that: described body of heater (1) bottom is provided with overflow blanket
(18), described overflow blanket (18) is four-layer structure, is followed successively by knitting ceramic fibre blanket layer, knitting ceramic fiber blanket from top to bottom
Layer, ceramic fibre blanket layer, carbon felt layer, the thickness of described knitting ceramic fibre blanket layer is 10mm, the thickness of knitting ceramic fibre blanket layer
Degree is 10mm, the thickness of ceramic fibre blanket layer is 25mm, the thickness of carbon felt layer is 10mm.
7. polycrystalline silicon ingot or purifying furnace as claimed in claim 6, it is characterised in that: the upper surface of described overflow blanket (18) is provided with excessive
Stream silk.
8. polycrystalline silicon ingot or purifying furnace as claimed in claim 7, it is characterised in that: it is provided with multiple on described subiculum warming plate (3)
Spout hole (20).
9. polycrystalline silicon ingot or purifying furnace as claimed in claim 8, it is characterised in that: set between described crucible (6) and crucible guard boards (7)
It is equipped with carbon felt (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN117287977A (en) * | 2023-11-24 | 2023-12-26 | 杭州嘉悦智能设备有限公司 | Carbonization preheating furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117287977A (en) * | 2023-11-24 | 2023-12-26 | 杭州嘉悦智能设备有限公司 | Carbonization preheating furnace |
| CN117287977B (en) * | 2023-11-24 | 2024-02-13 | 杭州嘉悦智能设备有限公司 | Carbonization preheating furnace |
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