CN205680681U - Multichannel Transient Voltage Suppressor - Google Patents
Multichannel Transient Voltage Suppressor Download PDFInfo
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- CN205680681U CN205680681U CN201620419137.5U CN201620419137U CN205680681U CN 205680681 U CN205680681 U CN 205680681U CN 201620419137 U CN201620419137 U CN 201620419137U CN 205680681 U CN205680681 U CN 205680681U
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Abstract
Disclose a kind of multichannel Transient Voltage Suppressor.Described multichannel Transient Voltage Suppressor includes Semiconductor substrate；The epitaxial layer being positioned in described Semiconductor substrate, wherein the second doping type and the first doping type are contrary；And the isolated area being positioned in described epitaxial layer, described epitaxial layer is separated into multiple active area by described isolated area, the plurality of active area is for respectively forming multiple first diode, multiple second diode and public break-over diode, described multichannel Transient Voltage Suppressor also includes contacting with described Semiconductor substrate, and with at least one conductive channel contacting in described first doped region and described epitaxial layer, for by the collecting zone of described break-over diode and described Semiconductor substrate short circuit.This multichannel Transient Voltage Suppressor use break-over diode reduce operating voltage, thus improve high-power under Electro-static Driven Comb ability.
Description
Technical field
The utility model relates to microelectronics technology, more particularly, to multichannel Transient Voltage Suppressor.
Background technology
Transient Voltage Suppressor TVS (Transient Voltage Suppressor) develops on the basis of voltage-stabiliser tube
High-effect circuit brake.The profile of TVS diode is as good as with common voltage-stabiliser tube, but, due to special structure and technique
Design, the transient response speed of TVS diode and surge absoption ability are far above common voltage-stabiliser tube.For example, the sound of TVS diode
It is only 10 between Ying Shi-12Second, and the surge power of up to thousands of watts can be absorbed.Under the conditions of applied in reverse, when bearing one
During the big pulse of high-energy, the working impedance of TVS diode can quickly be down to extremely low conduction value, thus allows big electric current to lead to
Cross, meanwhile, by voltage clamp at predeterminated level.Therefore, TVS diode can protect the accurate unit device in electronic circuit effectively
Part is from the damage of various surge pulse.
In the Chinese patent application of Application No. CN201420858051.3, disclose a kind of by three discrete device collection
Become the TVS device being formed on a single die.As it is shown in figure 1, this TVS device includes the first diode D1, the second diode D2
With Zener diode ZD, wherein the first diode D1 and Zener diode ZD differential concatenation.First diode D1 and Zener two pole
The anode of pipe connects signal end I/O and earth terminal GND respectively, and negative electrode and the anode of the second diode D2 connect signal end I/ respectively
O and earth terminal GND.When surge occurs, if bearing positive voltage between signal end I/O and earth terminal, and positive voltage
The breakdown voltage higher than Zener diode ZD for the numerical value, then produce the reverse flow of the forward along the first diode and Zener diode
Dynamic electric current, thus play the effect of ESD protection.If bearing negative voltage between signal end I/O and earth terminal, then only second
Diode D2 forward conduction.
It is unidirectional device in the TVS device shown in Fig. 1, wherein, common commutation diode adding as small capacitances value
Electric capacity, connects with Zener diode.The capacitance of this TVS device will depend upon which the capacitance of additional capacitor.This TVS device includes
Multiple discrete devices integrated in a chip, thus significantly reduce packaging cost, but manufacture craft is relative complex.
On the premise of not considering process complexity and cost, it is possible to achieve low electric capacity unidirectional ESD protection function.
But, owing to the characteristic of Zener diode limits, this TVS can not realize low-work voltage.In Zener diode,
If, with highly doped reduction operating voltage, then leakage current also can increase.Need control in order to take into account leakage current and operating voltage
Doping content in Zener diode processed is as a result, the operating voltage of Zener diode is usually less than 5V.The limit of this operating voltage
System also causes the transient power of TVS to be restricted so that TVS may not apply in high-power applications.
Therefore, it is desirable to develop novel TVS device, further reduce TVS operating voltage, thus improve high-power under
Electro-static Driven Comb ability.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of TVS device using break-over diode to realize.
According to one side of the present utility model, provide a kind of multichannel Transient Voltage Suppressor, it is characterised in that include:
The Semiconductor substrate of the first doping type；The epitaxial layer of the second doping type being positioned in described Semiconductor substrate, wherein second
Doping type and the first doping type are contrary；The isolated area of the first doping type being positioned in described epitaxial layer, described isolated area
Described epitaxial layer is separated into multiple active area, and wherein, the plurality of active area is for respectively forming multiple first diode, many
Individual second diode and public break-over diode, described multichannel Transient Voltage Suppressor also includes and described Semiconductor substrate
Contact, and with at least one conductive channel contact in described first doped region and described epitaxial layer, be used for by described break-through
The collecting zone of diode and described Semiconductor substrate short circuit.
Preferably, also include: the first doped region of the second doping type being positioned in described Semiconductor substrate；It is positioned at described
The epitaxial layer of the second doping type in Semiconductor substrate；Extend to the conduction of described Semiconductor substrate from described epi-layer surface
Passage；Second doped region of the first doping type being positioned in described epitaxial layer；And being positioned in described second doped region
3rd doped region of two doping types, the 4th doped region of the second doping type being positioned in described Semiconductor substrate；And position
6th doped region of the first doping type in described epitaxial layer, wherein, described second doped region is positioned at the described first doping
Above district and separate with described conductive channel, in the active area of described break-over diode, described first doped region, described
Two doped regions and described 3rd doped region are respectively as the collecting zone of described break-over diode, base and launch site, described
In the active area of multiple first diodes, described 6th doped region and described epitaxial layer are respectively as the sun of described first diode
Pole and negative electrode, in the source region of the plurality of second diode, described Semiconductor substrate and described epitaxial layer are respectively as described
The anode of the second diode and negative electrode.
Preferably, when described break-over diode turns on, current path includes described 3rd doped region, described second doping
District, described first doped region and described conductive channel and described Semiconductor substrate.Preferably, described multichannel transient voltage
Suppressor has multiple signal end and public earth terminal, the negative electrode of the plurality of first diode and described break-over diode
Launch site is electrically connected to each other, and the anode of the plurality of first diode and the collecting zone of described break-over diode connect described respectively
A corresponding signal end in multiple signal ends and described earth terminal, negative electrode and the anode of the plurality of second diode connect respectively
Connect the corresponding signal end in the plurality of signal end and described earth terminal.
Preferably, the 5th doped region of the second doping type being positioned in described epitaxial layer, described 5th doping are also included
District is around described 6th doped region, and wherein, described 5th doped region electrically connects with described 3rd doped region.
Preferably, the 7th doped region of the second doping type being positioned in described epitaxial layer, described 7th doping are also included
District is positioned at the region of the plurality of second diode, and electrically connects with described 6th doped region.
Preferably, also including the isolated area of the first doping type being positioned in described epitaxial layer, wherein, described isolated area limits
Fixed the plurality of first diode, the plurality of second diode and the respective active area of described break-over diode.
Preferably, the first doping type is one of N-type and p-type, and the second doping type is another in N-type and p-type.
Multichannel Transient Voltage Suppressor according to embodiment of the present utility model uses break-over diode.Due to break-through two
The breakdown voltage of pole pipe is much smaller than Zener diode, therefore can reduce the operating voltage of multichannel Transient Voltage Suppressor, example
Such as, it is possible to achieve multiple operating voltage such as 2.8V, 3.3V, 5V, thus improve high-power under Electro-static Driven Comb ability.Further
Ground, due to use conductive channel by described epitaxial layer and described Semiconductor substrate short circuit each other, even if this break-over diode based on
Vertical NPN structural laminate, it is also possible to use as planar device.Therefore, this multichannel Transient Voltage Suppressor can select
Property ground use as vertical devices or horizontal device.
In a preferred embodiment, the first diode and the second diode are integrated in same chip with break-over diode
In.Owing to using conductive channel by described epitaxial layer and described Semiconductor substrate short circuit each other, the first diode and the two or two pole
Pipe and break-over diode can use public dope semiconductor substrates, thus are easily integrated in three in one chip.
In this multichannel Transient Voltage Suppressor, using common commutation diode as the additional capacitor of small capacitances value, with break-through two
Pole pipe series connection.The commutation diode utilizing series connection reduces the capacitance of this multichannel Transient Voltage Suppressor, thus it is many to improve this
The transient response speed of channel instantaneous voltage suppressor.
Additionally, the manufacture craft of this multichannel Transient Voltage Suppressor and traditional bipolar transistor process compatible, and
Still semiconductor layer and/or doped region can be minimized when integrating commutation diode and break-over diode
Quantity, such that it is able to avoid the structure complication of multichannel Transient Voltage Suppressor and dramatically increasing of manufacturing cost.
Brief description
By the description to the utility model embodiment referring to the drawings, of the present utility model above-mentioned and other mesh
, feature and advantage will be apparent from, in the accompanying drawings:
Fig. 1 illustrates the circuit diagram of the Transient Voltage Suppressor according to prior art；
Fig. 2 illustrates the circuit diagram of the multichannel Transient Voltage Suppressor according to embodiment；
Fig. 3 illustrates the sectional view of the break-over diode according to the utility model embodiment；
Fig. 4 illustrates the sectional view of the multichannel Transient Voltage Suppressor according to the utility model embodiment；
Fig. 5 a to 5h illustrates the sectional view in each stage of manufacture method of multichannel Transient Voltage Suppressor shown in Fig. 4.
Detailed description of the invention
It is more fully described the utility model hereinafter with reference to accompanying drawing.In various figures, identical element uses similar
Reference represent.For the sake of clarity, the various piece in accompanying drawing is not necessarily to scale.Furthermore, it is possible to it is not shown
Part known to some.
It should be appreciated that when describing certain structure, when by one layer, a region is referred to as being positioned at another layer, another region
When " above " or " top ", can refer to be located immediately at another layer, above another region, or at it with another layer, another
Other layer or region is also comprised between region.Further, if by this structure overturn, this layer, a region will be located in another
Layer, another region " below " or " lower section ".If being located immediately at another layer, another region above scenario to describe,
The form of presentation of " A is directly on B " or " A is on B and adjoins therewith " will be used herein.
In the following description, the doping type describing semi-conducting material is specially one of p-type and N-type.It is appreciated that
If inverting the doping type of each semi-conducting material, it is also possible to obtain the semiconductor devices of identical function.
The utility model can present in a variety of manners, some of them example explained below.
Fig. 2 illustrates the circuit diagram of the multichannel Transient Voltage Suppressor according to embodiment.As in figure 2 it is shown, it is described many
Channel instantaneous voltage suppressor include a public break-over diode D0, multiple first diode D11 to Dn1, multiple second
Diode D12 to Dn2.Described multichannel Transient Voltage Suppressor has multiple signal end I/O1 to I/On and earth terminal GND.
Different from conventional diode, break-over diode D0 has the structure being similar to bipolar transistor, such as NPN crystal
Pipe, including emitter stage, base stage and colelctor electrode.At work, the open base of break-over diode, executes between emitter and collector
Making alive.By optimizing the doping content of launch site, base and collecting zone so that break-over diode produce launch site-base it
Between or collecting zone-base between occur punch-through breakdown.
Each passage of described multichannel Transient Voltage Suppressor includes first diode of Opposite direction connection and one
Second diode, and at the intermediate node of the first diode of each passage and the second diode, provide a signal end.With
As a example by first passage, first passage includes the first diode D11 and the second diode D12.First diode D11 and break-through two pole
Pipe D0 connects.The emitter stage of the negative electrode of the first diode D11 and break-over diode D0 is connected to each other, the sun of the first diode D11
The colelctor electrode of pole and break-over diode D0 connects signal end I/O1 and earth terminal GND, the negative electrode of the second diode D12 and sun respectively
Pole connects signal end I/O1 and earth terminal GND respectively.When surge occurs, if born between signal end I/O1 and earth terminal
Positive voltage, and the breakdown voltage that the numerical value of positive voltage is higher than break-over diode D0, then produce the forward along the first diode
With the electric current of the forward flow of break-over diode, thus play the effect of ESD protection.If signal end I/O1 and earth terminal it
Between bear negative voltage, then the only second diode D12 forward conduction.
Similar with the TVS device shown in Fig. 1, it is unidirectional device in the TVS device shown in Fig. 2, wherein, common rectification two
Pole pipe, as the additional capacitor of small capacitances value, is connected with break-over diode.The capacitance of this TVS device will depend upon which additional capacitor
Capacitance.The commutation diode utilizing series connection reduces the capacitance of TVS device, thus improves the transient response speed of TVS device
Degree.Further, above-mentioned TVS device uses break-over diode, owing to the breakdown voltage of break-over diode is much smaller than Zener
Diode, therefore can reduce the operating voltage of TVS device, for example, it is possible to realize multiple operating voltage such as 2.8V, 3.3V, 5V.
It should be noted that, break-over diode also can be used alone as TVS device.Now, TVS device is bilateral device, and
Still low-work voltage can be realized.But, compared with the TVS device shown in Fig. 2, TVS device is used alone break-through two
Pole pipe causes transient response speed to reduce.
Fig. 3 illustrates the sectional view of the break-over diode according to the utility model embodiment.In single channel application, break-through two
Pole pipe can be used alone as TVS device.In this embodiment, the break-over diode that break-over diode 100 is single use.
As it is shown on figure 3, break-over diode 100 includes that the 101st, Semiconductor substrate be positioned in Semiconductor substrate 101 first mixes
The isolated area that the 104th, the epitaxial layer that the 102nd, miscellaneous district is positioned in Semiconductor substrate 101 is positioned in epitaxial layer 104 is the 105th, from epitaxial layer 104
Extend to the conductive channel 115 of Semiconductor substrate 101 and the second doped region 108 and the be positioned in the second doped region 108 the 3rd
Doped region 110.
The e.g. heavily doped P-type semiconductor substrate of Semiconductor substrate 101, the e.g. lightly doped N of epitaxial layer 104 adulterates
Epitaxial layer.In an example, Semiconductor substrate 101 e.g. monocrystalline substrate, epitaxial layer 104 e.g. silicon epitaxy layer, and
And be respectively adopted suitable adulterant and be doping to desired doping type.
In order to form p-type or n type semiconductor layer or region, mixing of respective type can be mixed in semiconductor layer and region
Miscellaneous dose.For example, P-type dopant includes boron, and N type dopant includes phosphorus or arsenic or antimony.
In this embodiment, Semiconductor substrate 101 is about the heavily doped P-type silicon of 0.002～0.02 Ω cm for resistivity
Substrate.Epitaxial layer 104 is lightly doped n type silicon epitaxy layer, and its resistivity is about 0.1 Ω cm～1000 Ω cm, and thickness about 2 is micro-
Rice～100 microns.
The e.g. heavily doped p-type doped region of isolated area 105.Isolated area 105 extends to described from the surface of epitaxial layer 104
Semiconductor substrate 101, thus in epitaxial layer 104, limit the active area of break-over diode.Those skilled in the art can be according to device
Part demand modeling isolated area concentration, for example, 1018cm-3～1020cm-3Magnitude.
The first e.g. heavily doped n-type doping district of doped region 102, for forming the collecting zone of break-over diode.First
Doped region 102 is positioned in Semiconductor substrate 101, and conductive channel 115 extends to Semiconductor substrate 101 from the surface of epitaxial layer 104.
A part for epitaxial layer 104, together with isolated area 105, is defined to semiconductor island, wherein the first doped region by the first doped region 102
102 for limiting the bottom of semiconductor island, and isolated area 105 is for limiting the sidewall of semiconductor island.Second doped region 108 is positioned at half
It in conductor island, is positioned above the first doped region 102 and separates with conductive channel 115.Further, conductive channel 115 and half
Conductor substrate 101 contacts, and contacts with at least one in the first doped region 102 and epitaxial layer 104.First doped region 102 will
Being positioned on the current path of break-over diode, its concentration will affect the conducting resistance of break-over diode, and those skilled in the art can
According to device requirement control the first doped region 102 concentration, if but the concentration of the first described doped region 102 arrange too low,
Therefore the current capacity of serious constraint device should be controlled not less than 1019cm-3The order of magnitude.
Second doped region 108 e.g. p-type doped region, for forming the base of break-over diode.Second doped region 108 is
The doped region being formed in epitaxial layer 104.As described above, the second doped region 108 is positioned above the first doped region 102 and with conduction
Passage 115 separates.Second doped region 108 for example, ion implanting 1013cm-2～1015cm-2After the ion of magnitude and move back
Fire forms doped region.
The 3rd e.g. heavily doped n-type doping district of doped region 110, for forming the launch site of break-over diode.3rd
Doped region 110 extends to desired depth position the second doped region 108 from the surface of the second doped region 108.3rd doped region 110
Doping content for example, 1018cm-3～1020cm-3Magnitude.
Further, break-over diode 100 also includes interlayer insulating film the 112nd, the first electrode 121 and supplemantary electrode the 122nd,
Two electrodes 131.
First electrode 121 passes through the opening in interlayer insulating film 112 and the 3rd doped region 110 electrically connects.Alternatively, add
The opening that electrode 122 passes through in interlayer insulating film 112 electrically connects with conductive channel 115.Second electrode 131 and Semiconductor substrate
101 formation another surfaces relative with the surface of epitaxial layer 104 contact.Interlayer insulating film 112 is for example by silica or nitridation
Silicon form, the first electrode 121 and supplemantary electrode the 122nd, the second electrode 131 for example by selected from gold, silver, copper, aluminium, aluminium silicon, aluminium copper silicon,
The metal or alloy compositions such as titanium silver, titanium nickel gold.
In the break-over diode 100 shown in Fig. 3, Semiconductor substrate the 101st, the first doped region the 102nd, the second doped region is the 108th,
3rd doped region 110 constitutes the lamination of PNPN structure.Owing to conductive channel 115 is by short to Semiconductor substrate 101 and epitaxial layer 104
Connecing, therefore, the lamination practical function of this PNPN structure is identical with the lamination of NPN structure.When break-over diode turns on, electric current
Flow direction as shown by the dotted line in fig. 3, i.e. electric current from the 3rd doped region 110 via the second doped region the 108th, the first doped region
102 and conductive channel 115 flow to Semiconductor substrate 101.
In this embodiment, the first electrode 121 electrically connects with the 3rd doped region 110, the second electrode 131 and Semiconductor substrate
101 electrical connections, respectively as the emitter and collector of break-over diode.In alternate embodiments, it is possible to use additional electrical
Pole 122 is as colelctor electrode, thus saves the second electrode 131.Even if this break-over diode is based on vertical NPN structural laminate, also
Can use as planar device.Therefore, the break-over diode according to this embodiment can selectively as vertical devices or
Horizontal device uses so that break-over diode can be in easily integrated with other devices same chip.
Fig. 4 illustrates the sectional view of the multichannel Transient Voltage Suppressor according to the utility model embodiment.TVS device 200
It is unidirectional device, and consistent with the circuit theory of the TVS device shown in Fig. 2.That is, TVS device 200 is possible not only to realize low
Operating voltage, and be integrated in break-over diode and commutation diode in same chip, such that it is able to improve transient response
Speed.
As shown in Figure 4, TVS device 200 include in public Semiconductor substrate 101 formed multiple first diodes,
Multiple second diodes and a public break-over diode D0.Each passage of TVS device 200 includes of Opposite direction connection
First diode and second diode, and at the intermediate node of the first diode of each passage and the second diode,
One signal end is provided.For the sake of clarity, figure illustrate only the first diode D11 and second diode of first passage
D12.Although it is not completely shown in figure, but the structure of the 2nd passage to the n-th passage is identical with first passage, i.e. towards in figure
Left part replicate the first diode D11 and the second diode D12 structure.In this embodiment, isolated area 105 is from extension
The surface of layer 104 extends to described Semiconductor substrate 101, thus limits the first diode D1, the two or two pole in epitaxial layer 104
Pipe D2 and the respective active area of break-over diode D0.The structure of this break-over diode D0 is identical with the break-over diode shown in Fig. 3,
Hereinafter no longer describe in detail.
TVS device 200 also includes that the 103rd, the 4th doped region being positioned in Semiconductor substrate 101 is positioned in epitaxial layer 104
5th doped region the 107th, the 6th doped region 109 and the 7th doped region 111.
In the active area of the first diode D1, Semiconductor substrate 101 and the 4th doped region 103 form reverse PN junction, make
Being spaced apart of the first diode D1 and Semiconductor substrate 101.The 5th e.g. heavily doped n-type doping district of doped region 107, from
The surface of epitaxial layer 104 extends to desired depth position in epitaxial layer 104.6th doped region 109 e.g. p-type doped region, from
The surface of epitaxial layer 104 extends to desired depth position in epitaxial layer 104.6th doped region 109 forms PN with epitaxial layer 104
Knot, respectively as anode and the negative electrode of the first diode D1.
The doping content for example, 10 of the 4th doped region 10318cm-3～1020cm-3Magnitude.The doping of the 5th doped region 107
Concentration for example, 1018cm-3～1020cm-3Magnitude.6th doped region 109 for example, ion implanting 1013cm-2～1015cm-2Magnitude
Ion after and carry out annealing formed doped region.
5th doped region 107 is conducive to reducing the dead resistance of the first diode D1.In alternate embodiments, can save
Remove the 5th doped region 107.
In the active area of the second diode D2, Semiconductor substrate 101 and epitaxial layer 104 form PN junction, respectively as the
The anode of two diode D2 and negative electrode.The 7th e.g. heavily doped n-type doping district of doped region 111, from the surface of epitaxial layer 104
Extend to desired depth position in epitaxial layer 104.
The doping content for example, 10 of the 7th doped region 11118cm-3～1020cm-3Magnitude.
7th doped region 111 is conducive to reducing the dead resistance of the second diode D2.In alternate embodiments, can save
Remove the 7th doped region 111.
Further, TVS device 200 also includes the 3rd electrode the 123rd, the 4th electrode 124 and the 5th electrode 125.
3rd electrode 123 passes through the opening in interlayer insulating film 112 and the 6th doped region 109 electrically connects, the 4th electrode 124
Electrically connecting through the opening in interlayer insulating film 112 and the 7th doped region 111, the 5th electrode 125 passes through in interlayer insulating film 112
Opening and the 5th doped region 107 electrically connect.3rd electrode the 123rd, the 4th electrode 124 and the 5th electrode 125 for example by selected from gold,
The metal or alloy compositions such as silver, copper, aluminium, aluminium silicon, aluminium copper silicon, titanium silver, titanium nickel gold.
In the TVS device 200 shown in Fig. 4, additional interconnection or bonding line can be used, by the first electrode 121 and
Five electrodes 125 are connected to each other, by connected to each other to the 3rd electrode 123 and the 4th electrode 124, and collectively as
The signal end I/O of TVS device, the second electrode 131 is then as the receiving terminal GND of TVS device.
In this embodiment, owing to conductive channel 115 is by Semiconductor substrate 101 and epitaxial layer 104 short circuit, therefore, break-through
The lamination practical function of the PNPN structure in diode D0 is identical with the lamination of NPN structure.This break-over diode D0 can use P
Type Semiconductor substrate, namely public Semiconductor substrate 101 can be used with the first diode D1 and the second diode D2, thus
It easily is integrated in the first diode D1, the second diode D2 and break-over diode D0 in one chip.
In TVS device 200, using common commutation diode as the additional capacitor of small capacitances value, with break-over diode
Series connection.The commutation diode utilizing series connection reduces the capacitance of TVS device, thus improves the transient response speed of TVS device.Enter
One step ground, uses break-over diode in above-mentioned TVS device, owing to the breakdown voltage of break-over diode is much smaller than Zener two pole
Pipe, therefore can reduce the operating voltage of TVS device, for example, it is possible to realize multiple operating voltage such as 2.8V, 3.3V, 5V.
Fig. 5 a to 5h illustrates the sectional view in each stage of manufacture method of multichannel Transient Voltage Suppressor shown in Fig. 4.
As shown in Figure 5 a, shape the first doped region 102 and the 4th doped region 103 successively in Semiconductor substrate 101.
The e.g. heavily doped P-type semiconductor substrate of Semiconductor substrate 101.In an example, Semiconductor substrate 101 case
Monocrystalline substrate in this way, the resistivity of described monocrystalline substrate e.g., about 0.002～0.02 Ω cm.
First doped region 102 and the 4th doped region 103 are heavily doped n-type doping district for example respectively.In this example,
One doped region 102 uses phosphorus as adulterant, and doping content controls not less than 1019cm-3The order of magnitude.4th doped region 103 is adopted
With antimony as adulterant, doping content for example, 1018cm-3～1020cm-3Magnitude.
The doping process of semiconductor is known, uses the doping of suitable adulterant can obtain the phase in a semiconductor material
The doping type hoped.In order to form p-type or n type semiconductor layer or region, respective class can be mixed in semiconductor layer and region
The adulterant of type.For example, P-type dopant includes boron, and N type dopant includes phosphorus or arsenic or antimony.Doping process can include adding
Thermal annealing, the high annealing of such as more than 1000 DEG C is to activate adulterant.
Subsequently, Semiconductor substrate 101 forms epitaxial layer 104, as shown in Figure 5 b.
Epitaxial layer 104 can use known depositing operation to be formed.For example, depositing operation can be selected from electron beam evaporation
(EBM), chemical gaseous phase deposition (CVD), ald (ALD), sputtering in one.In this embodiment, epitaxial layer 104 case
Lightly doped N doped epitaxial layer in this way, resistivity is about 0.1 Ω cm～1000 Ω cm, thickness about 2 microns～100 microns.
Subsequently, epitaxial layer 104 forms insulating barrier 112, as shown in Figure 5 c.
Insulating barrier 112 can use sputtering or thermal oxide to be formed.For example, insulating barrier 112 is the silica that thermal oxide is formed
Layer, in follow-up doping step, insulating barrier 112 is as protective layer, and using the interlayer insulating film as resulting devices.
Subsequently, epitaxial layer 104 sequentially forms isolated area 105, and the 5th doped region 107, as shown in Figure 5 c.
The e.g. heavily doped p-type doped region of isolated area 105, doping content for example, 1018cm-3～1020cm-3Magnitude.Every
Extend to described Semiconductor substrate 101 from district 105 from the surface of epitaxial layer 104, epitaxial layer 104 is separated into three regions, point
Yong Yu not limit the active area of the first diode, the second diode and break-over diode.Additionally, this isolated area 105 and semiconductor
Substrate 101 is connected.
The 5th e.g. heavily doped n-type doping district of doped region 107, doping content is not less than 1019cm-3The order of magnitude.5th
Doped region 107 extends to epitaxial layer certain depth from the surface of epitaxial layer 104.
Subsequently, in the region of break-over diode, epitaxial layer 104 forms the second doped region 108, as fig 5d.
Second doped region 108 e.g. p-type doped region, for forming the base of break-over diode.Second doped region 108 will
At least a portion region transoid being positioned above the first doped region 102 of epitaxial layer 104.
Subsequently, in the first diode area, the 6th doped region 109 is formed in the epitaxial layer, as depicted in fig. 5e.
The 6th e.g. heavily doped p-type doped region of doped region 109, described p-type doped region for example, ion implanting
1013cm-2～1015cm-2After the ion of magnitude and carry out annealing formed doped region.6th doped region 109 is from the table of epitaxial layer 104
Face extends to desired depth position in epitaxial layer 104.6th doped region 109 forms PN junction, respectively as first with epitaxial layer 104
The anode of diode D1 and negative electrode.
Subsequently, in the region of break-over diode, the second doped region 108 forms the 3rd doped region 110, the two or two
In the region of pole pipe, epitaxial layer 104 forms the 7th doped region 111, as shown in figure 5f.
3rd doped region 110 and the 7th doped region 111 are heavily doped n-type doping district for example respectively, and doping content is for example
It is 1018cm-3～1020cm-3Magnitude.3rd doped region 110 and the 7th doped region 111 can be formed in same step.3rd
Doped region 110 extends to desired depth position the second doped region 108, the 7th doped region 111 from the surface of the second doped region 108
Extend to desired depth position epitaxial layer 104 from the surface of epitaxial layer 104.
In the region of break-over diode, the 3rd doped region the 110th, the second doped region 108 and the first doped region 102 are respectively
As the launch site of break-over diode D0, base and collecting zone.
In the region of the second diode, Semiconductor substrate 101 and epitaxial layer 104 form PN junction, respectively as the two or two
The anode of pole pipe D2 and negative electrode.
Subsequently, insulating barrier 112 forms multiple opening, and at least one opening, form conductive channel 115, as
Shown in Fig. 5 g.
It in order to form conductive channel 115, is initially formed at least one opening, extend to semiconductor from the surface of epitaxial layer 104
Substrate 101, then deposits conductive material to fill at least one opening described.
Conductive channel 115 is for example by selected from metal or alloy such as gold, silver, copper, aluminium, aluminium silicon, aluminium copper silicon, titanium silver, titanium nickel gold
Composition.
Further, the plurality of opening exposes the 3rd doped region 110 respectively in the region of break-over diode and conduction is logical
The surface in road 115, exposes the surface of the 5th doped region 107 and the 6th doped region 109, the two or two in the region of the first diode
The region of pole pipe exposes the surface of the 7th doped region 111.
A part for epitaxial layer 104, together with isolated area 105, is defined to semiconductor island, Qi Zhong by the first doped region 102
One doped region 102 is for limiting the bottom of semiconductor island, and isolated area 105 is for limiting the sidewall of semiconductor island.Second doped region
108 are positioned in semiconductor island, are positioned above the first doped region 102 and separate with conductive channel 115.Conductive channel 115 and half
Conductor substrate 101 contacts, and contacts with at least one in the first doped region 102 and epitaxial layer 104.
Subsequently, multiple electrode is made, as shown in figure 5h.
First electrode 121 passes through the opening in interlayer insulating film 112 and the 3rd doped region 110 electrically connects.3rd electrode 123
Electrically connecting through the opening in interlayer insulating film 112 and the 6th doped region 109, the 4th electrode 124 passes through in interlayer insulating film 112
Opening and the 7th doped region 111 electrically connect, the 5th electrode 125 passes through opening and the 5th doped region in interlayer insulating film 112
107 electrical connections.
Alternatively, the opening that supplemantary electrode 122 passes through in interlayer insulating film 112 electrically connects with conductive channel 115.
By thinning for Semiconductor substrate 101 and back face metalization, form metal layer on back at the back side of Semiconductor substrate 101,
As the second electrode 131.That is, the second electrode 131 and Semiconductor substrate 101 form relative another with the surface of epitaxial layer 104
One surface contact.
Above-mentioned electrode is for example by selected from metal or alloy groups such as gold, silver, copper, aluminium, aluminium silicon, aluminium copper silicon, titanium silver, titanium nickel gold
Become.
It should be noted that, heavy doping is with to be lightly doped be relative concept in the above-described example, represent heavily doped doping
Concentration is more than lightly doped doping content, and the not restriction to concrete doping content scope.
In the above description, known structural element and step are not described in detail.But this area
It will be appreciated by the skilled person that corresponding structural element and step can be realized by various technological means.In addition, for shape
Becoming identical structural element, those skilled in the art can be devised by the not identical side with process as described above
Method.Although in addition, respectively describing each embodiment above, but it is not intended that the measure in each embodiment can not have
It is used in combination sharply.
Above embodiment of the present utility model is described.But, the mesh that these embodiments are merely to illustrate that
, and be not intended to limit scope of the present utility model.Scope of the present utility model is limited by claims and equivalent thereof
Fixed.Without departing from scope of the present utility model, those skilled in the art can make multiple replacement and modification, and these substitute and modification
All should fall within the scope of the utility model.
Claims (8)
1. a multichannel Transient Voltage Suppressor, it is characterised in that include:
The Semiconductor substrate of the first doping type；
First doped region of the second doping type being positioned in described Semiconductor substrate；
The epitaxial layer of the second doping type being positioned in described Semiconductor substrate, wherein the second doping type and the first doping type
On the contrary；
The isolated area of the first doping type being positioned in described epitaxial layer, described epitaxial layer is separated into by described isolated area multiple to be had
Source region,
Wherein, the plurality of active area is for respectively forming multiple first diode, multiple second diode and public break-through
Diode,
Described multichannel Transient Voltage Suppressor also includes contacting with described Semiconductor substrate, and with described first doped region and institute
State the conductive channel that at least one in epitaxial layer contacts, for serving as a contrast the collecting zone of described break-over diode with described semiconductor
End short circuit.
2. multichannel Transient Voltage Suppressor according to claim 1, it is characterised in that also include:
The epitaxial layer of the second doping type being positioned in described Semiconductor substrate；
Extend to the conductive channel described Semiconductor substrate from described epi-layer surface；
Second doped region of the first doping type being positioned in described epitaxial layer；And
3rd doped region of the second doping type being positioned in described second doped region,
4th doped region of the second doping type being positioned in described Semiconductor substrate；And
6th doped region of the first doping type being positioned in described epitaxial layer,
Wherein, described second doped region is positioned above described first doped region and separates with described conductive channel,
In the active area of described break-over diode, described first doped region, described second doped region and described 3rd doping
District respectively as the collecting zone of described break-over diode, base and launch site,
In the active area of the plurality of first diode, described 6th doped region and described epitaxial layer are respectively as described first
The anode of diode and negative electrode,
In the source region of the plurality of second diode, described Semiconductor substrate and described epitaxial layer are respectively as the described 2nd 2
The anode of pole pipe and negative electrode.
3. multichannel Transient Voltage Suppressor according to claim 2, it is characterised in that in the conducting of described break-over diode
When, current path include described 3rd doped region, described second doped region, described first doped region and described conductive channel, with
And described Semiconductor substrate.
4. multichannel Transient Voltage Suppressor according to claim 2, it is characterised in that described multichannel transient voltage presses down
Utensil processed has multiple signal end and public earth terminal, the negative electrode of the plurality of first diode and sending out of described break-over diode
Penetrating district to be electrically connected to each other, the anode of the plurality of first diode and the collecting zone of described break-over diode connect described many respectively
A corresponding signal end in individual signal end and described earth terminal, negative electrode and the anode of the plurality of second diode connect respectively
A corresponding signal end in the plurality of signal end and described earth terminal.
5. multichannel Transient Voltage Suppressor according to claim 2, it is characterised in that also include being positioned at described epitaxial layer
In the 5th doped region of the second doping type, described 5th doped region is around described 6th doped region, and wherein, the described 5th mixes
Miscellaneous district electrically connects with described 3rd doped region.
6. multichannel Transient Voltage Suppressor according to claim 2, it is characterised in that also include being positioned at described epitaxial layer
In the 7th doped region of the second doping type, described 7th doped region is positioned at the region of the plurality of second diode, and
And electrically connect with described 6th doped region.
7. multichannel Transient Voltage Suppressor according to claim 2, it is characterised in that also include being positioned at described epitaxial layer
In the isolated area of the first doping type, wherein, described isolated area limit the plurality of first diode, the plurality of 2nd 2
Pole pipe and the respective active area of described break-over diode.
8. multichannel Transient Voltage Suppressor according to any one of claim 1 to 7, it is characterised in that the first doping
Type is one of N-type and p-type, and the second doping type is another in N-type and p-type.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037205A (en) * | 2018-07-19 | 2018-12-18 | 盛世瑶兰（深圳）科技有限公司 | Transient Voltage Suppressor and its manufacturing method |
| CN109801910A (en) * | 2017-11-17 | 2019-05-24 | 力特有限公司 | Asymmetric Transient Voltage Suppressor device and forming method |
-
2016
- 2016-05-10 CN CN201620419137.5U patent/CN205680681U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801910A (en) * | 2017-11-17 | 2019-05-24 | 力特有限公司 | Asymmetric Transient Voltage Suppressor device and forming method |
| CN109037205A (en) * | 2018-07-19 | 2018-12-18 | 盛世瑶兰（深圳）科技有限公司 | Transient Voltage Suppressor and its manufacturing method |
| CN109037205B (en) * | 2018-07-19 | 2020-12-22 | 车智路数据管理有限公司 | Transient voltage suppressor and method of manufacturing the same |
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