CN205607540U - Micro -bolometer based on graphite alkene - Google Patents
Micro -bolometer based on graphite alkene Download PDFInfo
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- CN205607540U CN205607540U CN201521087866.7U CN201521087866U CN205607540U CN 205607540 U CN205607540 U CN 205607540U CN 201521087866 U CN201521087866 U CN 201521087866U CN 205607540 U CN205607540 U CN 205607540U
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Abstract
The utility model relates to a micro -bolometer based on graphite alkene, graphite alkene micro -bolometer includes silicon fundus (101), unsettled hole (102), suspension layer (103), metal electrode lead wire (104), the infrared sensitive layer of graphite alkene (105), graphite alkene protective layer (106), suspension layer micropore (107). This micro -bolometer adopts graphite alkene as broadband infrared absorption sensitive layer, adopts suspension layer microcellular structure to improve infrared detection sensitivity, and simple structure is with low costs, and has excellent non - refrigeration broadband infrared detection performance.
Description
Technical field
This utility model belongs to photoelectric field, particularly to a kind of micro-metering bolometer based on Graphene.
Background technology
Infrared imaging is the important technology that modern national defense is military, facilitates officers and men in night, smog, observation operation in the greasy weather.The infrared imagery technique being widely used at present includes refrigeration and non-brake method two class, and wherein refrigeration mode infrared imaging is owing to needing complicated refrigeration plant, and causes systems bulky, is not easy to individual combat.Non refrigerating infrared imaging technology is started late, but quickly grows, and wherein the micro-metering bolometer non refrigerating infrared imaging technology with vanadium oxide as sensing unit is widely used to national defense and military fields.But, the photo absorption performance of vanadium oxide self is poor, needs the optical cavity structure by the infrared absorbing materials such as silicon nitride and complexity.Additionally, the detecting band of traditional micro-metering bolometer single (8 μm～12 μm), it is impossible to realize broadband (3 μm～12 μm).
Graphene, current state-of-the-art two-dimension nano materials, it is possible to give the brand-new characteristic of photoelectric device, brand-new function, brand-new concept.It is provided simultaneously with the optics of excellence, electricity, mechanics, thermal property.In particular, Graphene has broadband absorption ability (from visible light wave range to far infrared), and single-layer graphene can absorb the light of 2.3%.Thus, the Graphene of certain thickness and physical dimension is capable of broadband Uncooled infrared detection.
Utility model content
The purpose of this utility model is to provide a kind of based on Graphene micro-metering bolometer, solves the problems such as existing micro-metering bolometer complex process, INFRARED ABSORPTION wave band is narrow, ir-absorbance is low, it is achieved non-brake method broadband, low cost infrared acquisition.
A kind of Graphene micro-metering bolometer involved by this utility model, including silicon base, unsettled hole, flying shore layer, metal electrode lead-in wire, infrared sensitive layer, Graphene protective layer, flying shore layer micropore；
Described silicon base is conventional semiconductor silicon chip, and unsettled hole is distributed above silicon base；
Described flying shore layer, is placed in above unsettled hole, and its material includes silicon nitride, silicon dioxide, polymer elastomer or wherein combination, and thickness is 20nm～5 μm；Wherein said polymer elastomer is the one in polydimethylsiloxane, polyurethane elastomer, silicone rubber, polyurethane rubber；
Described metal electrode lead-in wire is positioned at the top of flying shore layer, and is positioned at the both sides of infrared sensitive layer；
Described infrared sensitive layer is to use Graphene as broadband INFRARED ABSORPTION sensitive layer, infrared-sensitive is placed on above flying shore layer, and two ends are connected with metal electrode lead-in wire, the thickness of Graphene is 5nm～1000nm, and the form of Graphene includes graphene film, graphene nano wall and graphene microchip etc.；
Described Graphene protective layer, is positioned at the surface of infrared sensitive layer, and in order to protect Graphene to exempt to be destroyed during preparation technology and use, concrete material includes silicon nitride, silicon dioxide, carborundum etc., and its thickness is 10nm～500nm；
Described flying shore layer micropore is rectangle blind hole, is distributed in flying shore layer, and the degree of depth is 1 μm～100 μm.
Described graphene film is to be prepared by CVD, and is transferred to above unsettled layer, obtains different-thickness graphene film by repeatedly branch mode.
Described graphene nano wall is to be prepared by PECVD or MPCVD mode, can directly deposit on unsettled layer, it is also possible to being transferred to above unsettled layer after preparation in other substrates, the thickness of graphene nano wall can be controlled by growth technique.
Described graphene microchip is to be deposited on above unsettled layer by the way of solution spin coating, controls Graphene thickness by the concentration of solution, spin coating rotating speed.
Unit component a size of 15 × 15 μm of described Graphene micro-metering bolometer2～200 × 200 μm2, the fill factor, curve factor of Graphene sensing unit is 50%～95%.
The unit component of described Graphene micro-metering bolometer can arrange in n × m array focal plane mode, wherein n=1,2,3 ... integer, m=1,2,3 ... integer.
This utility model improves infrared acquisition sensitivity, simple in construction, low cost, and has the non-brake method broadband infrared acquisition performance of excellence.
Accompanying drawing explanation
Fig. 1 is Graphene micro-metering bolometer unit component structural section figure, and wherein 101 is silicon base, and 102 is unsettled hole; 103 is flying shore layer, and 104 go between for metal electrode, and 105 is Graphene infrared sensitive layer; 106 is Graphene protective layer, and 107 is flying shore layer micropore；
Fig. 2 is Graphene micro-metering bolometer unit component structural plan figure, and wherein 101 is silicon base, and 103 is flying shore layer, and 104 go between for metal electrode, and 105 is Graphene infrared sensitive layer, and 106 is Graphene protective layer；
Fig. 3 is Graphene micro-metering bolometer unit component array.
Detailed description of the invention
Below in conjunction with Graphene micro-metering bolometer unit component structural section figure such as Fig. 1, unit component structural plan figure such as Fig. 2 and Graphene micro-metering bolometer array of figure 3, principle of the present utility model and feature are described, example is served only for explaining this utility model, is not intended to limit scope of the present utility model.
Embodiment one
In the present embodiment, preparing rectangle blind hole as unsettled hole 102 array, the degree of depth in this unsettled hole 102 by the micro-nano technology means such as photoetching, etching in silicon chip substrate 101 is 1 μm, and the characteristic size in hole is 18 μ m 18 μm, and the fill factor, curve factor of array is 81%；
In the present embodiment, flying shore layer 103 is silicon nitride film, is deposited by LPCVD, and thickness is 100nm；
In the present embodiment, preparing manhole 107 array by the micro-nano technology means such as photoetching, etching on flying shore layer 103, pore size is 2 μm, and dutycycle is 1:1；
In the present embodiment, the form of Graphene infrared sensitive layer 105 is graphene nano wall, and this graphene nano wall first passes through PECVD to be prepared in Copper Foil substrate, is then transferred on above-mentioned flying shore layer by the method for wet etching；
In the present embodiment, the method that Graphene infrared sensitive unit is etched by photoetching and oxygen gas plasma realizes array pattern, and the size of unit is 15 μ m 15 μm；
In the present embodiment, Graphene infrared sensitive layer 105 deposits the silicon nitride of 20nm as Graphene protective layer 106；
In the present embodiment, preparing metal electrode lead-in wire 104 by the micro-nano processing method of vacuum evaporation and photoetching, stripping, metal is the gold that 100nm is thick.
In the present embodiment, Graphene micro-metering bolometer realizes the array focal plane of 350 × 450, and fill factor, curve factor is 56.25%.
Embodiment two
In the present embodiment, preparing rectangle blind hole as unsettled hole 102 array, the degree of depth in this unsettled hole 102 by the micro-nano technology means such as photoetching, etching in silicon chip substrate 101 is 10 μm, and the characteristic size in hole is 23 μ m 23 μm, and the fill factor, curve factor of array is 84.64%；
In the present embodiment, flying shore layer 103 is silica membrane, is deposited by LPCVD, and thickness is 200nm；
In the present embodiment, preparing manhole 107 array by the micro-nano technology means such as photoetching, etching on flying shore layer 103, pore size is 5 μm, and dutycycle is 1:1；
In the present embodiment, the form of Graphene infrared sensitive layer 105 is graphene nano wall, and this graphene nano wall first passes through MPCVD directly to be prepared on flying shore layer 105；
In the present embodiment, the method that Graphene infrared sensitive unit is etched by photoetching and oxygen gas plasma realizes array pattern, and the size of unit is 20 μ m 20 μm；
In the present embodiment, Graphene infrared sensitive layer 105 deposits the silicon nitride of 100nm as Graphene protective layer 106；
In the present embodiment, preparing metal electrode lead-in wire 104 by the micro-nano processing method of vacuum evaporation and photoetching, stripping, metal is the gold that 100nm is thick.
In the present embodiment, Graphene micro-metering bolometer realizes the array focal plane of 320 × 560, and fill factor, curve factor is 64%.
Embodiment three
In the present embodiment, preparing rectangle blind hole as unsettled hole 102 array, the degree of depth in this unsettled hole 102 by the micro-nano technology means such as photoetching, etching in silicon chip substrate 101 is 20 μm, and the characteristic size in hole is 50 μ m 50 μm, and the fill factor, curve factor of array is 92.46%；
In the present embodiment, flying shore layer 103 is PDMS film, is deposited by the method for spin coating, and thickness is 200nm；
In the present embodiment, preparing manhole 107 array by the micro-nano technology means such as photoetching, etching on flying shore layer 103, pore size is 10 μm, and dutycycle is 1:1；
In the present embodiment, the form of Graphene infrared sensitive layer 105 is graphene film, and this graphene film first passes through CVD to be prepared in Copper Foil substrate, is then transferred on above-mentioned flying shore layer by the method for wet etching；
In the present embodiment, the method that Graphene infrared sensitive unit is etched by photoetching and oxygen gas plasma realizes array pattern, and the size of unit is 48 μ m 48 μm；
In the present embodiment, Graphene infrared sensitive layer 105 deposits the silicon dioxide of 100nm as Graphene protective layer 106；
In the present embodiment, preparing metal electrode lead-in wire 104 by the micro-nano processing method of vacuum evaporation and photoetching, stripping, metal is the gold that 100nm is thick.
In the present embodiment, Graphene micro-metering bolometer realizes the array focal plane of 100 × 150, and fill factor, curve factor is 85.21%.
Claims (3)
1. a Graphene micro-metering bolometer, including silicon base, unsettled hole, flying shore layer, metal electrode lead-in wire, infrared sensitive layer, Graphene protective layer, flying shore layer micropore, it is characterised in that:
Described silicon base is conventional semiconductor silicon chip, and unsettled hole is distributed above silicon base；
Described flying shore layer, is placed in above unsettled hole, and thickness is 20nm～5 μm；
Described metal electrode lead-in wire is positioned at the top of flying shore layer, and is positioned at the both sides of infrared sensitive layer；
Described infrared sensitive layer is to use Graphene as broadband INFRARED ABSORPTION sensitive layer, infrared-sensitive is placed on above flying shore layer, and two ends are connected with metal electrode lead-in wire, the thickness of Graphene is 5nm～1000nm, and the form of Graphene includes graphene film, graphene nano wall and graphene microchip；
Described Graphene protective layer, is positioned at the surface of infrared sensitive layer, and its thickness is 10nm～500nm；
Described flying shore layer micropore is rectangle blind hole, is uniformly distributed in flying shore layer, and the degree of depth is 1 μm～100 μm.
Graphene micro-metering bolometer the most according to claim 1, is characterized in that unit component a size of 15 × 15 μm of described Graphene micro-metering bolometer2～200 × 200 μm2, the fill factor, curve factor of Graphene sensing unit is 50%～95%.
Graphene micro-metering bolometer the most according to claim 1, is characterized in that the unit component of described Graphene micro-metering bolometer can arrange in n × m array focal plane mode, wherein n=1,2,3 ... integer, m=1,2,3 ... integer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521087866.7U CN205607540U (en) | 2015-12-23 | 2015-12-23 | Micro -bolometer based on graphite alkene |
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| CN201521087866.7U CN205607540U (en) | 2015-12-23 | 2015-12-23 | Micro -bolometer based on graphite alkene |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109425367A (en) * | 2017-09-04 | 2019-03-05 | 北京清正泰科技术有限公司 | A kind of graphene sensor range protection system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109425367A (en) * | 2017-09-04 | 2019-03-05 | 北京清正泰科技术有限公司 | A kind of graphene sensor range protection system |
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