CN205826144U - A kind of non-brake method broadband Infrared Detectors - Google Patents
A kind of non-brake method broadband Infrared Detectors Download PDFInfo
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- CN205826144U CN205826144U CN201620754295.6U CN201620754295U CN205826144U CN 205826144 U CN205826144 U CN 205826144U CN 201620754295 U CN201620754295 U CN 201620754295U CN 205826144 U CN205826144 U CN 205826144U
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Abstract
The utility model discloses a kind of non-brake method broadband Infrared Detectors, its unit component includes silicon base, supporting layer, metal electrode, broadband infrared absorption layer, thermally sensitive layer and unsettled hole；Thermally sensitive layer is placed in the centre above or below broadband infrared absorption layer；Metal electrode is placed in the both sides of thermally sensitive layer, the top at broadband infrared absorption layer two ends；Supporting layer is placed in above silicon base, and unsettled hole is placed in the centre of silicon base and supporting layer, and breaks through silicon base and supporting layer, and broadband infrared absorption layer and thermally sensitive layer are placed in above supporting layer and the upper end open in supporting layer middle unsettled hole is completely covered.Broadband infrared absorption layer of the present utility model and thermally sensitive layer collectively constitute infrared sensitive layer, and combine hanging structure, and the performance of detector can be greatly improved.Solve the problems such as existing non-brake method broadband Infrared Detectors complex process, INFRARED ABSORPTION wave band is narrow, ir-absorbance is low, it is achieved non-brake method broadband, low cost, high sensitivity infrared acquisition.
Description
Technical field
This utility model belongs to photoelectric field, relates to a kind of non-brake method broadband Infrared Detectors.
Background technology
Infrared Detectors is the important technology that modern national defense is military, facilitates officers and men to make in night, smog, observation in the greasy weather
War.The Infrared Detectors technology being widely used at present includes refrigeration and non-brake method two class, and wherein refrigeration mode infrared imaging is owing to needing
Want complicated refrigeration plant, and cause systems bulky, be not easy to individual combat.Non refrigerating infrared imaging technology is started late, but
Being to quickly grow, wherein the non-refrigerated infrared detector technology with vanadium oxide as sensing unit is widely used to national defense and military neck
Territory.But, the photo absorption performance of vanadium oxide self is poor, needs by the infrared absorbing materials such as silicon nitride and the optics cavity of complexity
Body structure.Additionally, the detecting band of traditional non-brake method broadband Infrared Detectors single (8～14 μm), it is impossible to realize wide ripple
Section (3～14 μm).Existing non-brake method broadband infrared detector structure complexity, complex process, the suction narrow, infrared of INFRARED ABSORPTION wave band
Yield is low, especially at the Uncooled infrared detection technology slower development of 3～5 mu m wavebands.Wherein, broadband infrared absorbing material is
Crucial.
Therefore, it is necessary to for micro-metering bolometer based on Graphene, it is necessary to design technology device junction simple, rational
Structure, it is achieved broadband Uncooled infrared detection.
Utility model content
The purpose of this utility model is contemplated to overcome the deficiency of above-mentioned background technology, it is provided that a kind of non-brake method broadband is red
External detector, uses the through hole that back-etching technique makes as unsettled hole, optimizes infrared absorbing material and temperature-sensitive elastomer
Material, structure and position, it is achieved low cost, high-performance broadband Uncooled infrared detection.
A kind of non-brake method broadband Infrared Detectors involved by this utility model, its unit component include silicon base 101,
Supporting layer 102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106；Broadband is infrared
Absorbed layer 104 is placed in thermally sensitive layer 105 either above or below, and thermally sensitive layer 105 is positioned in broadband infrared absorption layer 104
Between and contact；Metal electrode 103 be placed in the both sides of thermally sensitive layer 105, broadband infrared absorption layer 104 two ends upper
Side, and contact with broadband infrared absorption layer 104；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silica-based
The end 101 and the centre of supporting layer 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and heat
Sensitive layer 105 is placed in above supporting layer 102 and completely covers the upper end open in the unsettled hole 106 in the middle of supporting layer 102；Wide
Wave band infrared absorption layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；
Broadband infrared absorption layer 104 and thermally sensitive layer 105 collectively constitute infrared sensitive layer；Broadband infrared absorption layer 104 thickness is
5nm～2 μm；The upper end open size in unsettled hole 106 is 5 μ m 5 μm～500 μ m 500 μm；Supporting layer 102 thickness is 20nm
～2 μm；Thermally sensitive layer 105 thickness is 50nm～10 μm；Metal electrode 103 thickness is 50nm～200nm；The size of unit component
A size of 7 μ m 7 μm～1000 μ m 1000 μm, the fill factor, curve factor of broadband infrared absorption layer 104 is 42%～94%, the widest
The size of wave band infrared absorption layer 104 and the size of unit component are 42%～94%.
Further, described unit component is with n × m array arrangement, n and m be >=integer of 1.
Further, described three-dimensional carbon nano material is CNT, graphene nano wall, dimensional structured carbon nanocapsule thin film
Or the three-dimensional porous composite that carbon nanomaterial is formed with polymer.
Further, described silicon base 101 is conventional semiconductor silicon chip.
Further, described supporting layer 102 is the one in silicon nitride or silicon dioxide.
Further, described temperature-sensitive elastomer has good thermal deformation behavior, for PDMS, TPU, Ecoflex, ultra-violet curing
Glue, silicone rubber or polyurethane rubber.
Further, described metal electrode 103 is the one in gold, silver, aluminum, copper or titanium.
Further, the following institute of preparation method of a kind of non-brake method broadband Infrared Detectors involved by this utility model
State.
When above broadband infrared absorption layer 104 is placed in thermally sensitive layer 105, the system of non-brake method broadband Infrared Detectors
Preparation Method is as follows:
Step one, at silicon base 101 front depositing support layer 102, thickness is 20nm～2 μm；
Step 2, in the preparation of silicon base 101 back side with the unsettled hole 106 of n × m array arrangement, n and m be >=1 whole
Number, defines n × m unit, and unsettled hole 106 is positioned at the centre of each unit, and unsettled hole 106 breaks through silicon base 101, unit
Size dimension be 7 μ m 7 μm～1000 μ m 1000 μm；The upper end open size in unsettled hole is 5 μ m 5 μm～500 μ m
500μm；
Step 3, deposit temperature-sensitive elastomer on supporting layer 102 surface, and it is elastic graphically to etch temperature-sensitive with n × m array
Body, has obtained completely covers the thermally sensitive layer 105 in unsettled hole 106 in each unit, and thickness is 50nm～10 μm.
Step 4, on thermally sensitive layer 105 transfer or deposition three-dimensional carbon nanomaterial, and graphically etch with n × m array
Three-dimensional carbon nano material, obtains broadband infrared absorption layer 104, and thickness is 5nm～2 μm；Thermally sensitive layer 105 in each unit
Centre in broadband infrared absorption layer 104；In each unit the fill factor, curve factor of broadband infrared absorption layer 104 be 42%～
94%；In the most each unit, the size of broadband infrared absorption layer 104 is 42%～94% with the size of unit.Three-dimensional carbon
Nano material is CNT, graphene nano wall, dimensional structured carbon nanocapsule thin film or carbon nanomaterial and polymer shape
The three-dimensional porous composite become；CNT, graphene nano wall on thermally sensitive layer 105 Direct precipitation or first growth after
It is transferred on thermally sensitive layer 105；Dimensional structured carbon nanocapsule thin film passes through the method for vacuum coating directly on thermally sensitive layer 105
Deposition；The three-dimensional porous composite that carbon nanomaterial and polymer are formed is by spin coating, printing, inkjet printing or spraying method
It is deposited on thermally sensitive layer 105.
Step 5, by vacuum evaporation and photoetching, micro-nano processing method thermally sensitive layer 105 in each unit of stripping
Both sides, broadband infrared absorption layer 104 two ends deposit metal electrodes 103, thickness is 50nm～200nm；
Step 6, etch supporting layer 102 from silicon base 101 back side by existing unsettled hole 106, obtain penetrating silicon base
101 and the unsettled hole 106 of supporting layer 102.
When broadband infrared absorption layer 104 is placed in below thermally sensitive layer 105, the system of non-brake method broadband Infrared Detectors
Preparation Method is as follows:
Step one, at silicon base 101 front depositing support layer 102, thickness is 20nm～2 μm；
Step 2, in the preparation of silicon base 101 back side with the unsettled hole 106 of n × m array arrangement, n and m be >=1 whole
Number, defines n × m unit, and unsettled hole 106 is positioned at the centre of each unit, and unsettled hole 106 breaks through silicon base 101, unit
Size dimension be 7 μ m 7 μm～1000 μ m 1000 μm；The upper end open size in unsettled hole is 5 μ m 5 μm～500 μ m
500μm；
Step 3, at the transfer of supporting layer 102 surface or deposition three-dimensional carbon nanomaterial, and graphically etch with n × m array
Three-dimensional carbon nano material, obtains broadband infrared absorption layer 104, and thickness is 5nm～2 μm；The infrared suction of broadband in each unit
Receive layer 104 completely covers unsettled hole 106, the fill factor, curve factor of the broadband infrared absorption layer 104 in each unit be 42%～
94%；In the most each unit, the size of broadband infrared absorption layer 104 is 42%～94% with the size of unit.Three-dimensional carbon
Nano material is CNT, graphene nano wall, dimensional structured carbon nanocapsule thin film or carbon nanomaterial and polymer shape
The three-dimensional porous composite become；The method that CNT, graphene nano wall are deposited by chemical gaseous phase is directly at supporting layer
102 surfaces deposit or are transferred on supporting layer 102；Dimensional structured carbon nanocapsule thin film is directly existed by the method for vacuum coating
Deposit on supporting layer 102；The three-dimensional porous composite that carbon nanomaterial and polymer are formed is beaten by spin coating, printing, ink-jet
Print or spraying method are deposited on supporting layer 102.
Step 4, by vacuum evaporation and photoetching, micro-nano processing method infrared suction of broadband in each unit of stripping
Receiving layer 104 two ends deposit metal electrodes 103, thickness is 50nm～200nm；
Step 5, surface deposition temperature-sensitive elastomer in the middle of the broadband infrared absorption layer 104, and with n × m array figure
Changing etching temperature-sensitive elastomer, obtained completely covers the thermally sensitive layer 105 in unsettled hole 106 in each unit, thickness is
50nm～10 μm.In each unit, thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104, and metal electrode 103 is in warm
The both sides of sensitive layer 105；
Step 6, etch supporting layer 102 from silicon base 101 back side by existing unsettled hole 106, obtain penetrating silicon base
101 and the unsettled hole 106 of supporting layer 102.
Infrared Detectors described in the utility model is highly sensitive, simple in construction, technique simple, low cost, and has excellence
Non-brake method broadband infrared acquisition performance.Broadband infrared absorption layer 104 of the present utility model uses three-dimensional carbon nano material,
Improve ir-absorbance；Thermally sensitive layer 105 uses temperature-sensitive elastomer, improves the responsiveness of detector；Unsettled hole 106 is placed in silica-based
The end 101, is internal, improves detection signal to noise ratio；Broadband infrared absorption layer 104 is simultaneously as conductive layer, and thermally sensitive layer 105 is common
Composition infrared sensitive layer, and combine hanging structure, the performance of detector can be greatly improved；CNT, graphene nano wall,
The three-dimensional porous composite that dimensional structured carbon nanocapsule thin film or carbon nanomaterial are formed with polymer, as carbon nanometer material
The three-dimensional extension of material, the three dimensional structure of surface and inside has extremely strong light absorpting ability；Meanwhile, loose nanostructured
Basis is provided for non-brake method detection.Solve existing non-brake method broadband Infrared Detectors complex process, INFRARED ABSORPTION wave band narrow,
The problems such as ir-absorbance is low, it is achieved non-brake method broadband, low cost infrared acquisition.
Accompanying drawing explanation
Fig. 1 is the unit component structure top view of the non-brake method broadband Infrared Detectors of embodiment 1-4；
Fig. 2 is the unit component structural section figure of the non-brake method broadband Infrared Detectors of embodiment 1-4；
Fig. 3 is the unit component structure top view of the non-brake method broadband Infrared Detectors of embodiment 5-8；
Fig. 4 is the unit component structural section figure of the non-brake method broadband Infrared Detectors of embodiment 5-8；
In above-mentioned figure, 101 is silicon base, and 102 is supporting layer, and 103 is metal electrode, and 104 is broadband infrared absorption layer,
105 is thermally sensitive layer, and 106 is unsettled hole；
Detailed description of the invention
With embodiment, this utility model is described further below in conjunction with the accompanying drawings.Below to principle of the present utility model and
Feature is described, and example is served only for explaining this utility model, is not intended to limit scope of the present utility model.
Implement row 1
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown in figure 1, its unit component is tied
Structure sectional view is as shown in Figure 2.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Broadband infrared absorption layer
104 are placed in above thermally sensitive layer 105, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silicon nitride film, is prepared in silicon base 101 by hot oxygen technique, and thickness is
20nm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 5 μ m 5 μm；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is PDMS film, by spin coating PDMS diluent
The mode of (normal hexane dilutes 10 times) is after the deposition PDMS film of supporting layer 102 surface, and thickness is 50nm, by photoetching and oxygen
The method of plasma etching obtains array pattern, and unit size is 6 μ m 6 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is CNT, by chemistry
The method of vapour deposition (CVD) deposits in substrate, is then transferred into above temperature-sensitive elastomer 105, and thickness is 5nm, by light
Carve and the method for oxygen gas plasma etching obtains array pattern, size 6.8 μ m 6.8 μm of its unit；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the gold that 50nm is thick；
In the present embodiment, by reactive ion etching system from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 7 μ m 7 μm, wide ripple
The size that fill factor, curve factor is broadband infrared absorption layer 104 of section infrared absorption layer 104 and the size of unit component, be
94%, unit component forms the device of 1024 × 1024 array focal planes, it is achieved infrared imaging, has infrared band highly sensitive
Degree detection.
Embodiment 2
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown in figure 1, its unit component is tied
Structure sectional view is as shown in Figure 2.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Broadband infrared absorption layer
104 are placed in above thermally sensitive layer 105, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silica membrane, is prepared in silicon base 101 by hot oxygen technique, thickness
For 200nm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 20 μ m 20 μm；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is TPU film, is supporting by the way of spin coating
After the deposition TPU film of layer 102 surface, the method etched by photoetching and oxygen gas plasma obtains array pattern, and thickness is
200nm, unit size is 22 μ m 22 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is graphene nano wall, passes through
The method of microwave plasma enhanced chemical gaseous phase deposition (MPECVD) deposits in Copper Foil substrate, is then transferred into temperature-sensitive elastic
Above body 105, thickness is 300nm, and the method etched by photoetching and oxygen gas plasma obtains array pattern, its unit
Size 25 μ m 25 μm；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the copper that 100nm is thick；
In the present embodiment, by the method for wet etching from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 27 μ m 27 μm, wide
The fill factor, curve factor of wave band infrared absorption layer 104 is the size size with unit component of broadband infrared absorption layer 104, i.e.
Being 86%, unit component forms the device of 512 × 512 array focal planes, it is achieved infrared imaging, has infrared band highly sensitive
Degree detection.
Embodiment 3
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown in figure 1, its unit component is tied
Structure sectional view is as shown in Figure 2.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Broadband infrared absorption layer
104 are placed in above thermally sensitive layer 105, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silicon nitride film, is prepared in silicon base 101 by hot oxygen technique, and thickness is
500nm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 50 μ m 50 μm；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is polyurethane rubber thin film, by the way of spin coating
After the depositing polyurethane rubber film of supporting layer 102 surface, the method etched by photoetching and oxygen gas plasma obtains array
Changing figure, thickness is 500nm, and unit size is 53 μ m 53 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is dimensional structured carbon nanometer
Thin film, has the C film of three-D nano hole by the method for magnetron sputtering Direct precipitation above temperature-sensitive elastomer 105, thick
Degree is 500nm, and the method etched by photoetching and oxygen gas plasma obtains array pattern, size 55 μ m 55 of its unit
μm；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the silver that 200nm is thick；
In the present embodiment, by reactive ion etching system from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 65 μ m 65 μm, wide
The fill factor, curve factor of wave band infrared absorption layer 104 is the size size with unit component of broadband infrared absorption layer 104, i.e.
Being 72%, unit component forms the device of 128 × 256 array focal planes, it is achieved infrared imaging, has infrared band highly sensitive
Degree detection.
Embodiment 4
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown in figure 1, its unit component is tied
Structure sectional view is as shown in Figure 2.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Broadband infrared absorption layer
104 are placed in above thermally sensitive layer 105, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silica membrane, is prepared in silicon base 101 by hot oxygen technique, thickness
It is 2 μm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 500 μ m 500 μm；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is ultra-violet curing glue thin film, by the way of spin coating
After the deposition ultra-violet curing glue thin film of supporting layer 102 surface, the method etched by photoetching and oxygen gas plasma obtains array
Changing figure, thickness is 10 μm, and unit size is 600 μ m 600 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is carbon nanomaterial and be polymerized
The three-dimensional porous composite that thing is formed, the method Direct precipitation broadband above temperature-sensitive elastomer 105 by spraying is infrared
Absorbed layer 104, thickness is 2 μm, and the method etched by photoetching and oxygen gas plasma obtains array pattern, the chi of its unit
Very little 650 μ m 650 μm；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the titanium that 200nm is thick；
In the present embodiment, by reactive ion etching system from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 1000 μ m 1000 μ
M, the fill factor, curve factor of broadband infrared absorption layer 104 is the size size ratio with unit component of broadband infrared absorption layer 104
Example, is 43%, and unit component forms the device of 3 × 3 array focal planes, it is achieved infrared imaging, and infrared band is had Gao Ling
Sensitivity detects.
Embodiment 5
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown on figure 3, its unit component is tied
Structure sectional view is as shown in Figure 4.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Thermally sensitive layer 105 is placed in
Above broadband infrared absorption layer 104, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silicon nitride film, is prepared in silicon base 101 by hot oxygen technique, and thickness is
20nm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 5 μ m 5 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is CNT, by chemistry
The method of vapour deposition (CVD) Direct precipitation on supporting layer 102, thickness is 5nm, is etched by photoetching and oxygen gas plasma
Method obtain array pattern, size 6.8 μ m 6.8 μm of its unit；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the gold that 50nm is thick；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is PDMS film, by spin coating PDMS diluent
The mode of (normal hexane dilutes 10 times) is after the deposition PDMS film of broadband infrared absorption layer 104 surface, and thickness is 50nm, passes through
The method of photoetching and oxygen gas plasma etching obtains array pattern, and unit size is 6 μ m 6 μm；
In the present embodiment, by reactive ion etching system from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 7 μ m 7 μm, wide ripple
The size that fill factor, curve factor is broadband infrared absorption layer 104 of section infrared absorption layer 104 and the size of unit component, be
94%, unit component forms the device of 1024 × 1024 array focal planes, it is achieved infrared imaging, has infrared band highly sensitive
Degree detection.
Embodiment 6
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown on figure 3, its unit component is tied
Structure sectional view is as shown in Figure 4.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Thermally sensitive layer 105 is placed in
Above broadband infrared absorption layer 104, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silica membrane, is prepared in silicon base 101 by hot oxygen technique, thickness
For 200nm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 20 μ m 20 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is graphene nano wall, passes through
The method of plasma enhanced chemical vapor deposition (PECVD) Direct precipitation on supporting layer 102, thickness is 300nm, by light
Carve and the method for oxygen gas plasma etching obtains array pattern, size 25 μ m 25 μm of its unit；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the copper that 100nm is thick；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is TPU film, at wide ripple by the way of spin coating
Section infrared absorption layer 104 surface, after deposition TPU film, the method etched by photoetching and oxygen gas plasma obtains array
Figure, thickness is 200nm, and unit size is 22 μ m 22 μm；
In the present embodiment, by the method for wet etching from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 27 μ m 27 μm, wide
The fill factor, curve factor of wave band infrared absorption layer 104 is the size size with unit component of broadband infrared absorption layer 104, i.e.
Being 86%, unit component forms the device of 512 × 512 array focal planes, it is achieved infrared imaging, has infrared band highly sensitive
Degree detection.
Embodiment 7
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown on figure 3, its unit component is tied
Structure sectional view is as shown in Figure 4.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Thermally sensitive layer 105 is placed in
Above broadband infrared absorption layer 104, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silicon nitride film, is prepared in silicon base 101 by hot oxygen technique, and thickness is
500nm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 50 μ m 50 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is dimensional structured carbon nanometer
Thin film, has the C film of three-D nano hole by the method for magnetron sputtering Direct precipitation above supporting layer 102, and thickness is
500nm, the method etched by photoetching and oxygen gas plasma obtains array pattern, size 55 μ m 55 μm of its unit；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the silver that 200nm is thick；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is polyurethane rubber thin film, by the way of spin coating
After the depositing polyurethane rubber film of broadband infrared absorption layer 104 surface, the side etched by photoetching and oxygen gas plasma
Method obtains array pattern, and thickness is 500nm, and unit size is 53 μ m 53 μm；
In the present embodiment, by reactive ion etching system from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 65 μ m 65 μm, wide
The fill factor, curve factor of wave band infrared absorption layer 104 is the size size with unit component of broadband infrared absorption layer 104, i.e.
Being 72%, unit component forms the device of 128 × 256 array focal planes, it is achieved infrared imaging, has infrared band highly sensitive
Degree detection.
Embodiment 8
A kind of non-brake method broadband Infrared Detectors, its unit component structure top view is as it is shown on figure 3, its unit component is tied
Structure sectional view is as shown in Figure 4.
A kind of non-brake method broadband Infrared Detectors of the present embodiment, its unit component includes silicon base 101, supporting layer
102, metal electrode 103, broadband infrared absorption layer 104, thermally sensitive layer 105 and unsettled hole 106.Thermally sensitive layer 105 is placed in
Above broadband infrared absorption layer 104, and thermally sensitive layer 105 is positioned at the centre of broadband infrared absorption layer 104 and connects with it
Touch；Metal electrode 103 is placed in the both sides of thermally sensitive layer 105, the top at broadband infrared absorption layer 104 two ends, and and broadband
Infrared absorption layer 104 contacts；Supporting layer 102 is placed in above silicon base 101, and unsettled hole 106 is placed in silicon base 101 and supporting layer
The centre of 102, and break through silicon base 101 and supporting layer 102, broadband infrared absorption layer 104 and thermally sensitive layer 105 and all put
Above supporting layer 102 and completely covers the upper end open in unsettled hole 106 in the middle of supporting layer 102；Broadband INFRARED ABSORPTION
Layer 104 uses three-dimensional carbon nano material, and simultaneously as conductive layer, thermally sensitive layer 105 uses temperature-sensitive elastomer；The infrared suction of broadband
Receive layer 104 and thermally sensitive layer 105 collectively constitutes infrared sensitive layer.
In the present embodiment, silicon base 101 is conventional quasiconductor twin polishing silicon chip；
In the present embodiment, supporting layer 102 is silica membrane, is prepared in silicon base 101 by hot oxygen technique, thickness
It is 2 μm；
In the present embodiment, prepare unsettled hole by the micro-nano technology technique such as photoetching, etching in silicon base, unsettled hole 106
Upper end open size is 500 μ m 500 μm；
In the present embodiment, the three-dimensional carbon nano material that broadband infrared absorption layer 104 uses is carbon nanomaterial and be polymerized
The three-dimensional porous composite that thing is formed, by method Direct precipitation broadband INFRARED ABSORPTION above supporting layer 102 of spraying
Layer 104, thickness is 2 μm, and the method etched by photoetching and oxygen gas plasma obtains array pattern, the size of its unit
650μm×650μm；
In the present embodiment, prepare metal electrode 103, metal by the micro-nano processing method of vacuum evaporation and photoetching, stripping
For the titanium that 200nm is thick；
In the present embodiment, the temperature-sensitive elastomer that thermally sensitive layer 105 uses is ultra-violet curing glue thin film, by the way of spin coating
After the deposition ultra-violet curing glue thin film of broadband infrared absorption layer 104 surface, the side etched by photoetching and oxygen gas plasma
Method obtains array pattern, and thickness is 10 μm, and unit size is 600 μ m 600 μm；
In the present embodiment, by reactive ion etching system from silicon base 101 back side by the supporting layer on top, unsettled hole 106
102 etch away；
In the present embodiment, the size dimension of the unit component of non-brake method broadband Infrared Detectors is 1000 μ m 1000 μ
M, the fill factor, curve factor of broadband infrared absorption layer 104 is the size size ratio with unit component of broadband infrared absorption layer 104
Example, is 43%, and unit component forms the device of 3 × 3 array focal planes, it is achieved infrared imaging, and infrared band is had Gao Ling
Sensitivity detects.
Claims (7)
1. a non-brake method broadband Infrared Detectors, it is characterised in that its unit component includes silicon base (101), supporting layer
(102), metal electrode (103), broadband infrared absorption layer (104), thermally sensitive layer (105) and unsettled hole (106)；Broadband
Infrared absorption layer (104) is placed in thermally sensitive layer (105) either above or below, and thermally sensitive layer (105) is positioned at the infrared suction of broadband
Receive the centre of layer (104) and contact；Metal electrode (103) is placed in the both sides of thermally sensitive layer (105), the infrared suction of broadband
Receive the top at layer (104) two ends, and contact with broadband infrared absorption layer (104)；Supporting layer (102) is placed in silicon base
(101) top, unsettled hole (106) are placed in silicon base (101) and the centre of supporting layer (102), and break through silicon base (101)
It is placed in supporting layer (102) top and completely with supporting layer (102), broadband infrared absorption layer (104) and thermally sensitive layer (105)
Cover the upper end open in the middle unsettled hole (106) of supporting layer (102)；Broadband infrared absorption layer (104) uses three-dimensional carbon
Nano material, simultaneously as conductive layer, thermally sensitive layer (105) uses temperature-sensitive elastomer；Broadband infrared absorption layer (104) and heat
Sensitive layer (105) collectively constitutes infrared sensitive layer；Broadband infrared absorption layer (104) thickness is 5nm～2 μm；Unsettled hole (106)
Upper end open size be 5 μ m 5 μm～500 μ m 500 μm；Supporting layer (102) thickness is 20nm～2 μm；Thermally sensitive layer
(105) thickness is 50nm～10 μm；Metal electrode (103) thickness is 50nm～200nm；The size dimension of unit component is 7 μm
× 7 μm～1000 μ m 1000 μm, the fill factor, curve factor of broadband infrared absorption layer (104) is 42%～94%.
A kind of non-brake method broadband Infrared Detectors the most according to claim 1, it is characterised in that described unit component with
N × m array arrangement, n and m be >=integer of 1.
A kind of non-brake method broadband Infrared Detectors the most according to claim 1, it is characterised in that described three-dimensional carbon nanometer
Material is that CNT, graphene nano wall, dimensional structured carbon nanocapsule thin film or carbon nanomaterial are formed with polymer
Three-dimensional porous composite.
A kind of non-brake method broadband Infrared Detectors the most according to claim 1, it is characterised in that described silicon base
(101) it is conventional semiconductor silicon chip.
A kind of non-brake method broadband Infrared Detectors the most according to claim 1, it is characterised in that described supporting layer
(102) it is the one in silicon nitride or silicon dioxide.
A kind of non-brake method broadband Infrared Detectors the most according to claim 1, it is characterised in that described temperature-sensitive elastomer
For PDMS, TPU, Ecoflex, ultra-violet curing glue, silicone rubber or polyurethane rubber.
A kind of non-brake method broadband Infrared Detectors the most according to claim 1, it is characterised in that described metal electrode
(103) it is the one in gold, silver, aluminum, copper or titanium.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106153202A (en) * | 2016-07-18 | 2016-11-23 | 中国科学院重庆绿色智能技术研究院 | A kind of non-brake method broadband Infrared Detectors |
| CN107369738A (en) * | 2017-06-27 | 2017-11-21 | 上海集成电路研发中心有限公司 | A kind of quantum well detector and its manufacture method of multiband detection |
| CN109148678A (en) * | 2018-08-03 | 2019-01-04 | 电子科技大学 | A kind of non-refrigerating infrared sensor device based on spin Seebeck effect |
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2016
- 2016-07-18 CN CN201620754295.6U patent/CN205826144U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106153202A (en) * | 2016-07-18 | 2016-11-23 | 中国科学院重庆绿色智能技术研究院 | A kind of non-brake method broadband Infrared Detectors |
| CN107369738A (en) * | 2017-06-27 | 2017-11-21 | 上海集成电路研发中心有限公司 | A kind of quantum well detector and its manufacture method of multiband detection |
| CN109148678A (en) * | 2018-08-03 | 2019-01-04 | 电子科技大学 | A kind of non-refrigerating infrared sensor device based on spin Seebeck effect |
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