CN109148678A - A kind of non-refrigerating infrared sensor device based on spin Seebeck effect - Google Patents
A kind of non-refrigerating infrared sensor device based on spin Seebeck effect Download PDFInfo
- Publication number
- CN109148678A CN109148678A CN201810878651.9A CN201810878651A CN109148678A CN 109148678 A CN109148678 A CN 109148678A CN 201810878651 A CN201810878651 A CN 201810878651A CN 109148678 A CN109148678 A CN 109148678A
- Authority
- CN
- China
- Prior art keywords
- infrared sensor
- sensitive material
- layer
- sensor device
- spin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005678 Seebeck effect Effects 0.000 title claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 103
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000002907 paramagnetic material Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 12
- 239000011358 absorbing material Substances 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 8
- 238000009987 spinning Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 6
- 239000003302 ferromagnetic material Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
A kind of non-refrigerating infrared sensor device based on spin Seebeck effect disclosed by the invention includes the silicon base set gradually from the bottom to top, silicon dioxide substrates, sensitive material, infrared absorption layer, paramagnetic material layer and electrode layer.Insulated cavity is arranged in silicon base center；Heat insulation gap is arranged in three sides of silicon dioxide substrates；Infrared absorption layer area is less than sensitive material area, is arranged far from the top of the side sensitive material of not set heat insulation gap；Paramagnetic material layer is deposited by paramagnetic material at narrow strip, positioned at the top of the side sensitive material of not set heat insulation gap；Electrode layer is vaporized on the both ends of narrow strip paramagnetic material layer length direction.Compared with traditional non-refrigerating infrared sensor, infrared sensor response rate of the invention improves an order of magnitude, and specific detecivity improves two orders of magnitude, has higher detectivity to infra-red radiation while having lower noise level.
Description
Technical field
The invention belongs to infrared sensing field, in particular to a kind of uncooled ir sensing based on spin Seebeck effect
Device device.
Background technique
Non-refrigerating infrared sensor is not because of the characteristics of it needs liquid nitrogen refrigerating system, and small volume, structure is relatively easy,
It has a wide range of applications in fields such as military affairs, industry, medical treatment.
But existing non-refrigerating infrared sensor there are the problem of limit continuing to lift up for its performance.Resistor-type non-brake method
Infrared sensor has 1/f noise, and needs lasting energy consumption.Thermoelectric pile or thermal resistance infrared sensor are by its working principle
Limitation, device performance are difficult to continue to lift up.The main problem for limiting thermoelectric pile or thermal resistance infrared sensor performance is material
It interdepends between Seebeck coefficient, resistivity and thermal conductivity, it is difficult to optimize some ginseng under the premise of not influencing other parameters
Number, to reach higher response rate and specific detecivity.
Summary of the invention
The purpose of the present invention is to provide a kind of non-refrigerating infrared sensor devices based on spin Seebeck effect, it is expected that
Higher response rate and specific detecivity are obtained, to solve the above problems.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of non-refrigerating infrared sensor device based on spin Seebeck effect, including the silicon set gradually from the bottom to top
Substrate, silicon dioxide substrates, sensitive material, infrared absorption layer, paramagnetic material layer and electrode layer；
The silicon base is located at below silicon dioxide substrates, and a cavity is arranged in center；
The silicon dioxide substrates are deposited on above silicon base, and heat-insulated seam is arranged in three sides of silicon dioxide substrates
Gap；
The sensitive material is located at titanium dioxide by having the sensitive material film of spin Seebeck effect to deposit
Above silicon substrate；
Infrared absorption layer is deposited by infrared absorbing material film, and area is less than the area of sensitive material, and sets
It sets in the top of the side sensitive material far from not set heat insulation gap；
Paramagnetic material layer is deposited by paramagnetic material at shaped like narrow, positioned at the side sensitive material of not set heat insulation gap
Top, convert voltage for spinning current using inverse logic gates；
Two output terminals in electrode layer are vaporized on the both ends of shaped like narrow paramagnetic material layer length direction respectively, for surveying
Measure the voltage output of non-refrigerating infrared sensor device.
Wherein heat conduction structure includes the heat insulation gap on the cavity and silicon dioxide substrates inside silicon base.Design cavity
Purpose be to prevent heat from main body sensitive material lower conductive to base material.Cooperate bottom cavity, in main body sensitivity
The heat insulation gap of three sides setting of material can effectively prevent the heat transfer along sensitive material side.
Further, the sound with hole configurations is formed on the sensitive material film with spin Seebeck effect
Sub- crystal structure reduces the thermal conductivity of material for enhancing phon scattering.
Further, when infra-red radiation causes its temperature to rise by infrared absorption layer absorption, with spin Seebeck effect
The direction both ends of the length layer for the sensitive material answered generate temperature difference Δ T, due to the Seebeck effect that spins, the temperature difference Δ
The length direction both ends that T will lead to sensitive material generate spin voltage, and the spin voltage causes paramagnetic material layer along sensitivity
There is unbalanced spin polarization intensity in the length direction two sides of material layer, and then generate the spin electricity with spin polarization vector
Stream generates voltage output at the both ends of the length direction of paramagnetic material layer, by electrode layer due to inverse logic gates
Two output terminals reading voltage outputs can be realized and measure to infra-red radiation.
Further, the material of the sensitive material be indium antimonide, iron oxide and iron-nickel alloy iron or it is other have from
Revolve the material of Seebeck effect.
Further, the material of the infrared absorption layer is the mixture or silicon nitride of dark fund, carbon nanotube and SU-8.
Further, the material of the paramagnetic material layer is platinum.
Further, the material of the electrode layer is aluminium.
Further, the length of the silicon base and it is wide be respectively 240 μm and 150 μm, with a thickness of 200 μm, center
Cavity size be long 180 μm, it is 110 μm wide, 200 μm of thickness.
Further, the length of the silicon dioxide substrates and wide identical with the length of silicon base and width, respectively 240 μm with
150 μm, with a thickness of 2 μm.
Further, the length of the sensitive material and it is wide be respectively 160 μm and 90 μm, with a thickness of 0. 05 μm.
Further, the length of the infrared absorption layer and it is wide be respectively 80 μm and 90 μm, with a thickness of 1 μm, area is accounted for
The 50% of the sensitive material area.
Further, the paramagnetic material layer with a thickness of 0.05 μm.
Further, the electrode layer with a thickness of 0.1 μm.
In infrared sensor of the invention, tool is belonged to for the spin Seebeck coefficient and thermal conductivity that influence voltage output
There is the property of the sensitive material of spin Seebeck effect, and the resistivity for influencing noise is then to belong to the property of paramagnetic material.
This to be separately optimized these parameters to promote device performance, as response rate and specific detecivity are possibly realized.Relative to existing
1 and 2 quantity has been respectively increased in non-refrigerating infrared sensor device, infrared sensor response rate of the invention and specific detecivity
Grade.
Detailed description of the invention
Fig. 1 shows the structural perspective of the non-refrigerating infrared sensor device of the embodiment of the present invention.
Fig. 2 is the schematic cross-section along Fig. 1 length direction.
Fig. 3 shows the relationship of response rate and specific detecivity and device length of the invention.
Fig. 4 shows the relationship of response rate and specific detecivity and device widths of the invention.
Fig. 5 shows the relationship of response rate and specific detecivity and sensitive material thickness of the invention.
Fig. 6 shows the pass that response rate and specific detecivity and infrared absorption layer of the invention account for sensitive material area ratio
System.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawing.
As illustrated in fig. 1 and 2, the non-refrigerating infrared sensor device based on spin Seebeck effect of the embodiment of the present invention
100 structure includes the silicon base 110 set gradually from bottom to top, silicon dioxide substrates 120, sensitive material 130, infrared suction
Layer 140, paramagnetic material layer 150 and electrode layer 160 are received, wherein silicon base 110 is the load of non-refrigerating infrared sensor device 100
The overall structure of body, the infrared sensor based on spin Seebeck effect is implemented on silicon base, and by silicon dioxide substrates
As support.
Silicon base is located at below silicon dioxide substrates, and a cavity is arranged in center, and silicon dioxide substrates are deposited on
Above silicon base, and heat insulation gap 170 is set in three sides of silicon dioxide substrates；Sensitive material is by having from cock shellfish
The sensitive material film of gram effect deposits, and is located above silicon dioxide substrates；Infrared absorption layer is by infrared absorbing material
Film deposits, and area is less than the area of sensitive material, and the side for being arranged far from not set heat insulation gap is sensitive
The top of material layer；Paramagnetic material layer is deposited by paramagnetic material into shaped like narrow, sensitive positioned at the side of not set heat insulation gap
The top of material layer converts voltage for spinning current using inverse logic gates；Two output terminals point in electrode layer
It is not vaporized on the both ends of shaped like narrow paramagnetic material layer length direction, the voltage for measuring non-refrigerating infrared sensor device is defeated
Out.
In order to have the main body sensitive material both ends of spin Seebeck effect to obtain biggish temperature difference, need to design one
Kind heat conduction structure, the one end for making heat pass through main body sensitive material as far as possible are flowed to the other end, rather than sensitive from main body
The lower section or side of material flow to base material, therefore are to prevent in the purpose that a cavity is designed in silicon base center
Heat is from main body sensitive material lower conductive to base material.Cooperate the cavity, is arranged in three sides of main body sensitive material
Heat insulation gap 170 can effectively prevent the heat transfer along main body sensitive material side.
All have since the material (indium antimonide, iron oxide and dilval etc.) with spin Seebeck effect is general non-
Often high thermal conductivity coefficient, it is more difficult compared to semiconductor material to form very big temperature gradient.Therefore, it is necessary to the heat transfer knots to device
Structure optimizes.
From the point of view of microcosmic angle, heat transfer can be considered as a kind of using phonon or electronics as the energy transfer process of carrier.
After infra-red radiation is absorbed by infrared absorption layer, heat transfer is converted into the interior energy of material to ferromagnetic material, causes the temperature of material
Degree increases, and the phonon and electrons gain energy of material internal, by the interaction of electronics and atom, heat is able in material
Portion's transmitting, forms the hot-fluid of orientation.By introducing the microstructures such as nano-interface, defect or hole knot macroscopically in the material
Phon scattering can be enhanced in structure, reduces the thermal conductivity of material.
There is the photonic crystal structure of hole configurations by introducing, phon scattering can be increased, the heat of material is effectively reduced
Conductance, meanwhile, the hole that phonon crystal itself includes can also effectively reduce the thermal conductivity of device entirety, improve device performance.
The specific structural parameters of phonon crystal can be configured according to specific needs, to obtain preferably heat conductive structure, promote sensing
Device performance.
Next the selection of material, preparation process and its working principle in non-refrigerating infrared sensor will be described in detail.
Due to being all found to have spin Seebeck effect in the multiple material including conductor, semiconductor and insulator
Answer, such as indium antimonide, iron oxide and iron-nickel alloy etc., thus can select according to actual needs one of above-mentioned material or its
It has material of the material of spin Seebeck effect as sensitive material.
Infrared absorption layer is mainly used for absorbing infrared energy, and is translated into thermal energy, makes have spin Seebeck
The material of main part temperature of effect rises.Therefore it is required that the material of infrared absorption layer has higher absorptivity and lesser thermal capacitance.It is red
The technology of the existing comparative maturity of the design of outer absorbed layer, therefore can according to need the existing infrared absorption layer of selection, such as in gas
The dark fund film being prepared in higher nitrogen atmosphere by evaporation coating is pressed, it can also be using the mixed of carbon nanotube and SU-8
Object is closed, the silicon nitride that preparation process can also be used relatively simple.
Paramagnetic material is used to convert the voltage output that can be detected for spinning current by inverse logic gates, often
The paramagnetic material seen is platinum (Pt).
Electrode layer is used to measure the voltage output of non-refrigerating infrared sensor device, and usual aluminium (Al) is used as electrode layer
Material.
Firstly, the silicon base with a thickness of 700 μm is cleaned and dried, prepare the preparation of device.Complete prepare after
The thermal silicon dioxide (Thermal SiO2) that silicon substrate surface deposits one layer of 2 μ m-thick is used as substrate, passes through stripping technology system later
The ferromagnetic material of standby sensor, ferromagnetic material selects one of indium antimonide, iron oxide or iron-nickel alloy, in silicon dioxide substrates
The ferromagnetic material of one layer of 0.05 μ m-thick of upper sputtering, and formed by stripping method.Pass through plasma enhancing on ferromagnetic material upper layer
(silicon nitride has preferable absorbability in far infrared band to the silicon nitride of chemical vapour deposition technique (PECVD) one layer of 1 μ m-thick of deposition
Can), infrared absorption layer is prepared by reactive ion etching.Platinum item is prepared by stripping technology in next step, for exciting inverse spin suddenly
Your effect, converts spinning current to detectable voltage output, is deposited the platinum of 0.05 μ m-thick first, and by stripping method at
Type.Aluminium electrode is prepared later, for the reading of output voltage signal, the aluminium of 0.1 μ m-thick is deposited first, and formed with stripping method.
Then (CMP) is chemically-mechanicapolish polished from the back side by silicon base, silicon base thickness is milled to 200 μm, uses deep reactive ion
It etches (DRIE) and etches cavity behind from silicon base, finally removed with potassium hydroxide wet etching surplus below silicon dioxide substrates
Remaining monocrystalline silicon forms complete cavity.
The non-refrigerating infrared sensor based on spin Seebeck effect that the present invention designs passes through spin Seebeck effect pair
Infra-red radiation is detected.Detailed process is as follows.
Infrared radiation temperature is absorbed by infrared absorbing material first to rise, and then there is the quick of spin Seebeck effect
Feel material ends will formation temperature difference Δ T, at this time due to spin Seebeck effect, have spin Seebeck effect sensitivity
Material internal will generate spin voltage, that is, the difference μ of the chemical potential of the downward electronics of the electronics and spin spun up↑-μ↓,
It macroscopically shows as, the electronics that cold and hot end one end of entire material is spun up is more, the downward electricity and the other end spins
Son is more, that is, occurs spin polarization in the material.
In the infrared sensor that the present invention designs, by inverse logic gates to the sensitivity with spin Seebeck effect
The spin voltage generated in material measures.The spin voltage generated in sensitive material, will lead to paramagnetic material thereon
There is unbalanced spin polarization intensity along sensitive material length direction two sides, will generate in paramagnetic material with certainly at this time
Revolve the spinning current J of polarization vector σS, and then in the normal vector direction of the plane determined by spin polarization vector and spinning current
An electromotive force E to occurISHE, expression formula is as follows:
EISHE=DISHEJS×σ
Wherein DISHEIt is the constant determined by paramagnetic material nature.
Comprehensively consider spin Seebeck effect and inverse logic gates, the infrared sensor that the available present invention designs
The expression formula of output voltage:
Wherein, S is spin Seebeck coefficient, and Δ T is 130 cold and hot end of sensitive material with spin Seebeck effect
Temperature difference, w be with spin Seebeck effect sensitive material width, t be with spin Seebeck effect sensitive material
The thickness of material.
The infrared sensor based on spin Seebeck effect that the present invention designs is a kind of passive device, therefore main noise
Expression formula for thermal noise, average noise is as follows:
Wherein, k is Boltzmann constant, and T is environment temperature, and R is the resistance of paramagnetic material 150, and Δ f is measurement system
The frequency response bandwidth of system.
Evaluated using response rate (Responsivity) and specific detecivity (Detectivity) present invention design it is infrared
Sensor.The expression formula of response rate are as follows:
Wherein, PabsorbFor incident IR radiation power, the i.e. ir radiant power of the absorption of infrared absorbing material 140.
The expression formula of specific detecivity are as follows:
Wherein, RSFor the response rate for the infrared sensor that the present invention designs, A is the area of infrared absorbing material 140；K is
Boltzmann constant, T are environment temperature, and R is the resistance of paramagnetic material 150.
Referring next to Fig. 3-Fig. 6 to the emulation knot of the non-refrigerating infrared sensor device based on spin Seebeck effect
Fruit is illustrated.
The geometrical model for initially setting up the infrared sensor that the present invention designs is used for the Temperature Distribution of simulated sensor, is having
There is 110 temperature of the paramagnetic material 150 of 130 cold end of sensitive material and the temperature of electrode 160 and silicon base of spin Seebeck effect
It spends identical, does not influence the Temperature Distribution of paramagnetic material 150, therefore only need to consider temperature in silicon base 110, silicon dioxide liner
Bottom 120, the sensitive material 130 with spin Seebeck effect, the distribution situation in infrared absorbing material 140.According to temperature
Simulation result can calculate the evaluation index response rate and specific detecivity of infrared sensor.What is selected in the present embodiment has certainly
The sensitive material 1 30 for revolving Seebeck effect is iron-nickel alloy (Observation of the spin Seebeck effect, K
Uchida, S Takahashi, K Harii, et al., Nature, 455,778-781,09 October 2008 of pages),
The infrared absorbing material 140 selected is silicon nitride.
Set the size of silicon base 110 as it is long and it is wide be respectively 240 μm and 150 μm, with a thickness of 200 μm, center
Cavity size be long 180 μm, it is 110 μm wide, 200 μm of thickness, the length of silicon dioxide substrates 120 and wide and silicon base length and
Width is identical, respectively 240 μm and 150 μm, silicon dioxide substrates with a thickness of 2 μm, the length and width of sensitive material 130 are respectively
160 μm and 90 μm, with a thickness of 0.0 5 μm, the length of infrared absorbing material 140 and it is wide be respectively 80 μm and 90 μm, with a thickness of 1
μm, the area of infrared absorbing material 140 accounts for the 50% of 130 area of sensitive material.Concurrently setting environment temperature is 2
93.15K, incident ir radiant power PabsorbFor the response of 1 μ W, the simulation result display present invention infrared sensor designed
Rate RS=5446.98V/W, specific detecivityAnd the response of traditional non-refrigerating infrared sensor
Rate representative value is 202.8V/W, and specific detecivity representative value is(Characterization of
nanometer-thick polycrystalline silicon with phonon-boundary scattering
enhanced thermoelectric properties and its appl ication in infrared sensors,
Zhou H,Kropelnicki P,Lee C,Nanoscale,Issue 2, pages 532-541,14 January 2015)。
Compared with traditional non-refrigerating infrared sensor, the non-refrigerating infrared sensor based on spin Seebeck effect of the present embodiment is rung
Should rate high an order of magnitude, high two orders of magnitude of specific detecivity.Response rate indicates the sensitivity level of device, higher sound
Should rate indicate that the infrared sensor that designs of the present invention can be more delicately to infrared compared to traditional non-refrigerating infrared sensor
Radiation responds；Specific detecivity indicates that the height of the noise level of device, higher specific detecivity indicate what the present invention designed
Infrared sensor has lower noise compared with traditional non-refrigerating infrared sensor, can detect more small infrared
Radiation.
Fig. 3-Fig. 6 respectively illustrates influence of the change to device performance of different components parameter.Fig. 3 shows device performance
As the increase of device length first rises subsequent decline, it is moderate to illustrate that device length is answered；Fig. 4 display device performance is wide with device
The increase of degree and rise, indicate device widths do not answer it is too small；Fig. 5 display device performance reduces with the thickness of sensitive material 130
And rise, under the premise of guaranteeing quality of forming film, the thickness of sensitive material 130 is answered as small as possible；Fig. 6 is shown with infrared suction
The increase that 140 area of material accounts for 130 area ratio of sensitive material is received, the response rate of device continues to decline, after specific detecivity first rises
Decline indicates that the area of infrared absorbing material 1 40 should be in 30%-50%.
It is non-compared to traditional the invention proposes a kind of non-refrigerating infrared sensor device based on spin Seebeck effect
Refrigerating infrared sensor response rate high an order of magnitude, high two orders of magnitude of specific detecivity, can more sensitively detect
Infra-red radiation, and there is lower noise.It is further to note that the protection scope of the application is not limited thereto, appoint
Within the technical scope of the present application, any changes or substitutions that can be easily thought of, all by what those familiar with the art
It should cover within the scope of protection of this application.
Claims (8)
1. a kind of non-refrigerating infrared sensor device based on spin Seebeck effect, which is characterized in that the uncooled ir
Sensor device (100) includes the silicon base (110) set gradually from the bottom to top, silicon dioxide substrates (120), sensitive material
(130), infrared absorption layer (140), paramagnetic material layer (150) and electrode layer (160)；
An insulated cavity is arranged in silicon base (110) center；
The silicon dioxide substrates (120) are deposited on above silicon base (110), and in three sides of silicon dioxide substrates (120)
Heat insulation gap (170) are arranged in face；
The sensitive material (130) is by having the sensitive material film of spin Seebeck effect to deposit；
The infrared absorption layer (140) is deposited by infrared absorbing material film, and area is less than the area of sensitive material,
And it is arranged far from the top of the side sensitive material (130) of not set heat insulation gap；
The paramagnetic material layer (150) is deposited by paramagnetic material into narrow strip, sensitive positioned at the side of not set heat insulation gap
The top of material layer (130) converts voltage for spinning current using inverse logic gates；
Two output terminals in the electrode layer (160) are vaporized on the both ends of narrow strip paramagnetic material layer respectively, for measuring
The voltage output of non-refrigerating infrared sensor device.
2. non-refrigerating infrared sensor device according to claim 1, which is characterized in that there is spin Seebeck effect described
The photonic crystal structure with hole configurations is formed on the sensitive material film answered, further to reduce the thermal conductivity of material.
3. non-refrigerating infrared sensor device according to claim 1 or claim 2, which is characterized in that when infra-red radiation is by infrared suction
Receiving layer (140) and absorbing causes its temperature to rise, in the length direction two of the sensitive material (130) with spin Seebeck effect
End generates temperature difference Δ T, and due to the Seebeck effect that spins, the temperature difference Δ T will lead to the length side of sensitive material (130)
Spin voltage is generated to both ends, the spin voltage causes paramagnetic material layer (150) along the length direction two sides of sensitive material
There is unbalanced spin polarization intensity, and then generate the spinning current for having spin polarization vector, since inverse spin Hall is imitated
It answers, generates voltage output at paramagnetic material layer (150) both ends, by described in two output terminals reading in electrode layer (160)
Voltage output, which can be realized, measures infra-red radiation.
4. non-refrigerating infrared sensor device according to claim 1 or claim 2, which is characterized in that the sensitive material (130)
Material be indium antimonide, iron oxide and iron-nickel alloy iron or it is other have spin Seebeck effect material.
5. non-refrigerating infrared sensor device according to claim 1 or claim 2, which is characterized in that the infrared absorption layer (140)
Material be dark fund, carbon nanotube and SU-8 mixture or silicon nitride.
6. non-refrigerating infrared sensor device according to claim 1 or claim 2, which is characterized in that the paramagnetic material layer (150)
Material be platinum.
7. non-refrigerating infrared sensor device according to claim 1 or claim 2, which is characterized in that the material of the electrode layer (160)
Material is aluminium.
8. non-refrigerating infrared sensor device according to claim 1 or claim 2, which is characterized in that the length of the silicon base (110)
With it is wide be respectively 240 μm and 150 μm, with a thickness of 200 μm, the cavity size of center is to grow 180 μm, 110 μm wide, thickness
200 μm, the length and width of the silicon dioxide substrates (120) are identical as the length of the silicon base and width, described with a thickness of 2 μm
The length of sensitive material (130) and it is wide be respectively 160 μm and 90 μm, with a thickness of 0.05 μm, the infrared absorption layer (140)
Long and respectively 80 μm and 90 μm wide, with a thickness of 1 μm, area accounts for the 50% of the sensitive material (130) area, described
Paramagnetic material layer (150) with a thickness of 0.05 μm, the electrode layer (160) with a thickness of 0.1 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810878651.9A CN109148678B (en) | 2018-08-03 | 2018-08-03 | Uncooled infrared sensor device based on spinning Seebeck effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810878651.9A CN109148678B (en) | 2018-08-03 | 2018-08-03 | Uncooled infrared sensor device based on spinning Seebeck effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109148678A true CN109148678A (en) | 2019-01-04 |
| CN109148678B CN109148678B (en) | 2020-03-27 |
Family
ID=64791722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810878651.9A Expired - Fee Related CN109148678B (en) | 2018-08-03 | 2018-08-03 | Uncooled infrared sensor device based on spinning Seebeck effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109148678B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102494782A (en) * | 2011-11-28 | 2012-06-13 | 中国科学院半导体研究所 | Non-refrigerating thermocouple infrared detector and preparation method thereof |
| CN104412082A (en) * | 2012-05-08 | 2015-03-11 | 剑桥Cmos传感器有限公司 | IR thermopile detector |
| CN205826144U (en) * | 2016-07-18 | 2016-12-21 | 中国科学院重庆绿色智能技术研究院 | A kind of non-brake method broadband Infrared Detectors |
| CN107331765A (en) * | 2017-07-06 | 2017-11-07 | 西安交通大学 | A kind of thermoelectric conversion element structure based on spin Seebeck effect |
-
2018
- 2018-08-03 CN CN201810878651.9A patent/CN109148678B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102494782A (en) * | 2011-11-28 | 2012-06-13 | 中国科学院半导体研究所 | Non-refrigerating thermocouple infrared detector and preparation method thereof |
| CN104412082A (en) * | 2012-05-08 | 2015-03-11 | 剑桥Cmos传感器有限公司 | IR thermopile detector |
| CN205826144U (en) * | 2016-07-18 | 2016-12-21 | 中国科学院重庆绿色智能技术研究院 | A kind of non-brake method broadband Infrared Detectors |
| CN107331765A (en) * | 2017-07-06 | 2017-11-07 | 西安交通大学 | A kind of thermoelectric conversion element structure based on spin Seebeck effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109148678B (en) | 2020-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Quijada et al. | Optical conductivity of manganites: Crossover from Jahn-Teller small polaron to coherent transport in the ferromagnetic state | |
| CN103630254B (en) | A kind of graphene temperature sensor and preparation technology thereof | |
| US5404125A (en) | Infrared radiation sensor | |
| Varpula et al. | Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranes | |
| US9709536B2 (en) | Thermal flow sensor, gas sensor comprising at least one such sensor and Pirani gauge comprising at least one such sensor | |
| Gorshunov et al. | Direct observation of the superconducting energy gap in the optical conductivity of the iron pnictide superconductor Ba (Fe 0.9 Co 0.1) 2 As 2 | |
| Yung et al. | Thermal conductance and electron-phonon coupling in mechanically suspended nanostructures | |
| Gondorf et al. | Mobility and carrier density in nanoporous indium tin oxide films | |
| Daptary et al. | Correlated non-Gaussian phase fluctuations in LaAlO 3/SrTiO 3 heterointerfaces | |
| Ke et al. | Design, fabrication, and characterization of a high-performance CMOS-compatible thermopile infrared detector with self-test function | |
| Xu et al. | Boron-doped nanocrystalline silicon germanium thin films for uncooled infrared bolometer applications | |
| Zhai et al. | Study on the resistance characteristic of Pt thin film | |
| Zerov et al. | Vanadium oxide films with improved characteristics for IR microbolometric matrices | |
| CN109148678A (en) | A kind of non-refrigerating infrared sensor device based on spin Seebeck effect | |
| Zia et al. | Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications | |
| Jen et al. | Doping profile recognition applied to silicon photovoltaic cells using terahertz time-domain spectroscopy | |
| Liu et al. | An effective method for evaluating thermal parameters of diode-based thermal sensors | |
| Kreisler et al. | Low noise and fast response of infrared sensing structures based on amorphous Y–Ba–Cu–O semiconducting thin films sputtered on silicon | |
| Pham et al. | Boron-doped hydrogenated mixed-phase silicon as thermo-sensing films for infrared detectors | |
| CN106629577A (en) | MEMS (Microelectromechanical systems) infrared source and manufacture method thereof | |
| CN113030016A (en) | Weak measurement-based method for identifying type of Wilson semimetal and measuring inclination of Wilson cone | |
| Selvakumar et al. | Design analysis and electrical characterisation of porous silicon structure for sensor applications | |
| Kim et al. | The bolometric characteristic of thermally oxidized thin nickel film for an uncooled infrared image sensor | |
| Taralli et al. | Reduced active area in transition-edge sensors for visible-NIR photon detection: A comparison of experimental data and two-fluid model | |
| Zhou et al. | CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200327 |