CN109148678B - Uncooled infrared sensor device based on spinning Seebeck effect - Google Patents
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Abstract
The invention discloses a non-refrigeration infrared sensor device based on a spinning Seebeck effect. A heat insulation cavity is arranged at the center of the silicon substrate; heat insulation gaps are arranged on three side surfaces of the silicon dioxide substrate; the area of the infrared absorption layer is smaller than that of the sensitive material layer, and the infrared absorption layer is arranged above the sensitive material layer far away from one side without the heat insulation gap; the paramagnetic material layer is formed by evaporating a paramagnetic material into a narrow strip shape and is positioned above the sensitive material layer on one side without the heat insulation gap; the electrode layers are evaporated at two ends of the narrow strip-shaped paramagnetic material layer in the length direction. Compared with the traditional uncooled infrared sensor, the infrared sensor has the advantages that the response rate is improved by one order of magnitude, the detection rate is improved by two orders of magnitude, the infrared sensor has higher detection sensitivity to infrared radiation, and meanwhile, the noise level is lower.
Description
Technical Field
The invention belongs to the field of infrared sensing, and particularly relates to an uncooled infrared sensor device based on a spinning Seebeck effect.
Background
The uncooled infrared sensor has the characteristics of no need of a liquid nitrogen refrigerating system, small volume and relatively simple structure, and has wide application in the fields of military, industry, medical treatment and the like.
But the existing uncooled infrared sensor has the problem that the performance of the uncooled infrared sensor is limited to be continuously improved. The resistive uncooled infrared sensor has 1/f noise and requires continuous power consumption. The thermopile or the thermal resistance infrared sensor is limited by the working principle of the thermopile or the thermal resistance infrared sensor, and the performance of the device is difficult to be continuously improved. The main problem for limiting the performance of the thermopile or the thermal resistance infrared sensor is that the Seebeck coefficient, the resistivity and the thermal conductivity of the material are interdependent, and it is difficult to optimize a certain parameter on the premise of not influencing other parameters so as to achieve higher response rate and specific detection rate.
Disclosure of Invention
The present invention aims to provide an uncooled infrared sensor apparatus based on the spin seebeck effect, which is expected to obtain higher responsivity and specific detectivity to solve the above problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a non-refrigeration infrared sensor device based on a spinning Seebeck effect comprises a silicon substrate, a silicon dioxide substrate, a sensitive material layer, an infrared absorption layer, a paramagnetic material layer and an electrode layer which are sequentially arranged from bottom to top;
the silicon substrate is positioned below the silicon dioxide substrate, and a cavity is arranged at the center of the silicon substrate;
the silicon dioxide substrate is deposited above the silicon substrate, and heat insulation gaps are arranged on three side faces of the silicon dioxide substrate;
the sensitive material layer is formed by depositing a sensitive material film with a spinning Seebeck effect and is positioned above the silicon dioxide substrate;
the infrared absorption layer is formed by depositing an infrared absorption material film, the area of the infrared absorption layer is smaller than that of the sensitive material layer, and the infrared absorption layer is arranged above the sensitive material layer at the side far away from the side where the heat insulation gap is not arranged;
the paramagnetic material layer is formed by evaporating a paramagnetic material into a narrow strip shape, is positioned above the sensitive material layer on one side without the heat insulation gap, and converts spin current into voltage by utilizing the inverse spin Hall effect;
two output terminals in the electrode layer are respectively evaporated at two ends of the narrow-band paramagnetic material layer in the length direction and used for measuring the voltage output of the uncooled infrared sensor device.
Wherein the heat conducting structure comprises a cavity inside the silicon substrate and a thermal isolation gap on the silicon dioxide substrate. The purpose of the cavity is to prevent heat from being conducted from beneath the bulk sensitive material to the substrate material. In cooperation with the bottom cavity, the heat insulation gaps arranged on the three sides of the sensitive material of the main body can effectively prevent heat conduction along the sides of the sensitive material.
Furthermore, a phonon crystal structure with a hole structure is formed on the sensitive material film with the spin Seebeck effect, so that phonon scattering is enhanced, and the thermal conductivity of the material is reduced.
Further, when infrared radiation is absorbed by the infrared absorption layer to cause the temperature of the infrared radiation to rise, a temperature difference delta T is generated at two ends of the length direction of the sensitive material layer with the spin seebeck effect, due to the self-cock seebeck effect, the temperature difference delta T causes two ends of the length direction of the sensitive material layer to generate spin voltage, the spin voltage causes unbalanced spin polarization intensity of the paramagnetic material layer along two sides of the length direction of the sensitive material layer, further spin current with spin polarization vectors is generated, due to the anti-spin Hall effect, voltage output is generated at two ends of the length direction of the paramagnetic material layer, and the infrared radiation can be measured by reading the voltage output through two output terminals in the electrode layer.
Further, the material of the sensitive material layer is indium antimonide, iron oxide and iron-nickel alloy iron or other materials with a spin seebeck effect.
Further, the infrared absorption layer is made of black gold, a mixture of carbon nanotubes and SU-8 or silicon nitride.
Further, the paramagnetic material layer is made of platinum.
Further, the material of the electrode layer is aluminum.
Further, the silicon substrate has a length and a width of 240 μm and 150 μm, respectively, a thickness of 200 μm, and a cavity size at a central position thereof of 180 μm in length, 110 μm in width, and 200 μm in thickness.
Further, the length and width of the silicon dioxide substrate are the same as those of the silicon substrate, and are 240 μm and 150 μm respectively, and the thickness thereof is 2 μm.
Further, the length and width of the sensitive material layer are 160 μm and 90 μm, respectively, and the thickness thereof is 0.05 μm.
Further, the infrared absorption layer has a length and a width of 80 μm and 90 μm, respectively, a thickness of 1 μm, and an area of 50% of the sensitive material layer.
Further, the thickness of the paramagnetic material layer is 0.05 μm.
Further, the thickness of the electrode layer is 0.1 μm.
In the infrared sensor of the present invention, the spin seebeck coefficient and the thermal conductivity for influencing the voltage output are properties of a sensitive material having the spin seebeck effect, and the resistivity for influencing the noise is a property of a paramagnetic material. This makes it possible to optimize these parameters separately to improve device performance, such as responsivity and specific probing rate. Compared with the existing uncooled infrared sensor device, the infrared sensor has the advantages that the response rate and the specific detection rate are respectively improved by 1 and 2 orders of magnitude.
Drawings
Fig. 1 shows a perspective view of a structure of an uncooled infrared sensor apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic sectional view taken along the length of fig. 1.
Fig. 3 shows the responsivity and specific detectivity of the invention as a function of device length.
Fig. 4 shows the responsivity and specific detectivity of the invention as a function of device width.
Fig. 5 shows the responsivity and specific detectivity of the invention as a function of the thickness of the sensitive material layer.
FIG. 6 shows the responsivity and specific detectivity of the invention as a function of the area ratio of the infrared absorbing layer to the layer of sensitive material.
Detailed Description
The present invention is described in further detail below with reference to the attached drawings.
As shown in fig. 1 and 2, the structure of the uncooled infrared sensor apparatus 100 based on the spin seebeck effect according to the embodiment of the present invention includes a silicon substrate 110, a silicon dioxide substrate 120, a sensitive material layer 130, an infrared absorption layer 140, a paramagnetic material layer 150, and an electrode layer 160, which are sequentially disposed from bottom to top, where the silicon substrate 110 is a carrier of the uncooled infrared sensor apparatus 100, and the entire structure of the infrared sensor based on the spin seebeck effect is constructed on the silicon substrate and is supported by the silicon dioxide substrate.
The silicon substrate is positioned below the silicon dioxide substrate, a cavity is arranged at the center of the silicon substrate, the silicon dioxide substrate is deposited above the silicon substrate, and heat insulation gaps 170 are arranged on three sides of the silicon dioxide substrate; the sensitive material layer is formed by depositing a sensitive material film with a spinning Seebeck effect and is positioned above the silicon dioxide substrate; the infrared absorption layer is formed by depositing an infrared absorption material film, the area of the infrared absorption layer is smaller than that of the sensitive material layer, and the infrared absorption layer is arranged above the sensitive material layer at the side far away from the side where the heat insulation gap is not arranged; the paramagnetic material layer is formed by evaporating a paramagnetic material into a narrow strip shape, is positioned above the sensitive material layer on one side without the heat insulation gap, and converts spin current into voltage by utilizing the inverse spin Hall effect; two output terminals in the electrode layer are respectively evaporated at two ends of the narrow-band paramagnetic material layer in the length direction and used for measuring the voltage output of the uncooled infrared sensor device.
In order to obtain a large temperature difference between two ends of the body-sensitive material having the spin seebeck effect, it is necessary to design a heat conduction structure so that heat flows from one end to the other end of the body-sensitive material as much as possible, rather than from the lower side or the side of the body-sensitive material to the substrate material, and therefore, a cavity is designed at the center of the silicon substrate in order to prevent heat from being conducted from the lower side of the body-sensitive material to the substrate material. In cooperation with the cavity, thermal isolation gaps 170 are provided on three sides of the main body sensitive material to effectively prevent thermal conduction along the sides of the main body sensitive material.
Since materials with spin seebeck effect (indium antimonide, iron oxide, nickel-iron alloy, etc.) generally have very high thermal conductivity, it is difficult to form a large temperature gradient compared with semiconductor materials. Therefore, it is desirable to optimize the thermal conduction structure of the device.
From a microscopic perspective, thermal conduction can be viewed as a phonon or electron-borne energy transfer process. When infrared radiation is absorbed by the infrared absorption layer, heat is transferred to the ferromagnetic material and converted into internal energy of the material, the temperature of the material is increased, phonons and electrons in the material obtain energy, and the heat can be transferred in the material through the interaction of the electrons and atoms to form directional heat flow. By introducing a microstructure or a macroscopic hole structure such as a nano interface and a defect into the material, phonon scattering can be enhanced, and the thermal conductivity of the material can be reduced.
By introducing the phonon crystal structure with the hole structure, phonon scattering can be increased, the thermal conductivity of the material can be effectively reduced, and meanwhile, the holes contained in the phonon crystal can also effectively reduce the overall thermal conductivity of the device, so that the performance of the device is improved. The specific structural parameters of the phononic crystal can be set according to specific requirements so as to obtain a better thermal conduction structure and improve the performance of the sensor.
The selection of materials, the preparation process and the working principle of the uncooled infrared sensor will be described in detail below.
Since many materials including conductors, semiconductors and insulators are found to have spin seebeck effect, such as indium antimonide, iron oxide, iron-nickel alloy, etc., one of the above materials or other materials having spin seebeck effect may be selected as the material of the sensitive material layer according to actual needs.
The infrared absorption layer is mainly used for absorbing infrared radiation energy and converting the infrared radiation energy into heat energy, so that the temperature of the main body material with the spinning Seebeck effect is increased. Therefore, a material of the infrared absorption layer is required to have a high absorption rate and a small heat capacity. The design of the infrared absorption layer has a mature technology, so that the existing infrared absorption layer can be selected according to requirements, such as a black gold film prepared by evaporation coating in a nitrogen atmosphere with higher air pressure, a mixture of a carbon nano tube and SU-8, and silicon nitride with a simpler preparation process.
Paramagnetic materials are used to convert the spin current into a detectable voltage output by the reverse spin hall effect, and a common paramagnetic material is platinum (Pt).
The electrode layer is used for measuring the voltage output of the uncooled infrared sensor device, and aluminum (Al) is usually selected as the material of the electrode layer.
First, a silicon substrate having a thickness of 700 μm was cleaned and dried, and a device was prepared. After the preparation is finished, a layer of Thermal silicon dioxide (Thermal SiO2) with the thickness of 2 microns is deposited on the surface of a silicon substrate to serve as a substrate, then a ferromagnetic material of the sensor is prepared through a stripping process, the ferromagnetic material is selected from one of indium antimonide, ferric oxide or iron-nickel alloy, a layer of ferromagnetic material with the thickness of 0.05 microns is sputtered on the silicon substrate, and the silicon substrate is formed through a stripping method. A layer of silicon nitride with the thickness of 1 mu m is deposited on the upper layer of the ferromagnetic material by a Plasma Enhanced Chemical Vapor Deposition (PECVD) (the silicon nitride has better absorption performance in a far infrared band), and the infrared absorption layer is prepared by reactive ion etching. And preparing a platinum strip by a stripping process for exciting the inverse spin Hall effect, converting the spin current into detectable voltage for output, evaporating platinum with the thickness of 0.05 mu m, and forming by a stripping method. Then, an aluminum electrode for reading an output voltage signal was prepared by first evaporating aluminum with a thickness of 0.1 μm and molding by a lift-off method. Then Chemical Mechanical Polishing (CMP) is carried out on the silicon substrate from the back, the thickness of the silicon substrate is ground to 200 mu m, a cavity is etched from the back of the silicon substrate by using Deep Reactive Ion Etching (DRIE), and finally, the residual monocrystalline silicon below the silicon dioxide substrate is removed by using potassium hydroxide wet etching to form a complete cavity.
The uncooled infrared sensor based on the spin Seebeck effect detects infrared radiation through the spin Seebeck effect. The specific process is as follows.
Firstly, the infrared absorption material absorbs the temperature rise of the infrared radiation, then the temperature difference Delta T is formed between two ends of the sensitive material with the spin Seebeck effect, at the moment, the spin voltage is generated inside the sensitive material with the spin Seebeck effect due to the spin Seebeck effect, namely the difference mu between the chemical potentials of the electrons in the spin-up direction and the electrons in the spin-down direction↑-μ↓Macroscopically, the cold end and the hot end of the whole material have more electrons which spin upwards, and the other end has more electrons which spin downwards, namely, the spin polarization occurs in the material.
In the infrared sensor designed by the invention, the spin voltage generated in the sensitive material with the spin Seebeck effect is measured through the inverse spin Hall effect. The spin voltage generated in the sensitive material will cause the paramagnetic material on the sensitive material to have unbalanced spin polarization intensity along the length direction of the sensitive material, and then the spin current J with the spin polarization vector sigma will be generated in the paramagnetic materialSFurther, an electromotive force E appears in the direction of a normal vector of a plane determined by the spin polarization vector and the spin currentISHEThe expression is as follows:
EISHE＝DISHEJS×σ
wherein DISHEIs a constant determined by the nature of the paramagnetic material itself.
The expression of the output voltage of the infrared sensor designed by the invention can be obtained by comprehensively considering the self-rotation cock Beck effect and the inverse spin Hall effect:
wherein S is a spin seebeck coefficient, Δ T is a temperature difference between the cold end and the hot end of the sensitive material 130 having the spin seebeck effect, w is a width of the sensitive material having the spin seebeck effect, and T is a thickness of the sensitive material having the spin seebeck effect.
The infrared sensor based on the spin Seebeck effect is a passive device, so that the main noise is thermal noise, and the expression of the average noise is as follows:
where k is the boltzmann constant, T is the ambient temperature, R is the resistance of the paramagnetic material 150, and Δ f is the frequency response bandwidth of the measurement system.
The infrared sensor designed by the invention is evaluated by using a response rate (response) and a specific detection rate (Detectivity). The expression of the response rate is:
wherein, PabsorbIs the incident infrared radiation power, i.e., the infrared radiation power absorbed by the infrared absorbing material 140.
The specific detectivity expression is:
wherein R isSFor the responsivity of the infrared sensor designed for the present invention, a is the area of the infrared absorbing material 140; k is the boltzmann constant, T is the ambient temperature, and R is the resistance of the paramagnetic material 150.
Next, the simulation results of the uncooled infrared sensor apparatus based on the spin seebeck effect will be explained with reference to fig. 3 to 6.
Firstly, a geometric model of the infrared sensor designed by the invention is established for simulating the temperature distribution of the sensor, the temperature of the paramagnetic material 150 and the electrode 160 at the cold end of the sensitive material 130 with the spin seebeck effect is the same as the temperature of the silicon substrate 110, and the temperature distribution of the paramagnetic material 150 is not influenced, so that the distribution conditions of the temperature in the silicon substrate 110, the silicon dioxide substrate 120, the sensitive material 130 with the spin seebeck effect and the infrared absorption material 140 are only required to be considered. According to the simulation result of the temperature, the evaluation index response rate and the specific detection rate of the infrared sensor can be calculated. The sensing material 130 with spin Seebeck effect selected in this example is an iron-nickel alloy (e.g., triservation of the spin Seebeck effect, KUchida, S Takahashi, K Harii, et al, Nature,455, pages 778-.
The silicon substrate 110 is set to have a length and a width of 240 μm and 150 μm, respectively, a thickness of 200 μm, a cavity at a center position thereof has a length of 180 μm, a width of 110 μm, and a thickness of 200 μm, the silicon dioxide substrate 120 has a length and a width of 240 μm and 150 μm, respectively, the silicon dioxide substrate has a thickness of 2 μm, the sensitive material 130 has a length and a width of 160 μm and 90 μm, respectively, and a thickness of 0.05 μm, the infrared absorbing material 140 has a length and a width of 80 μm and 90 μm, respectively, and a thickness of 1 μm, and the area of the infrared absorbing material 140 occupies 50% of the area of the sensitive material 130. Simultaneously setting the ambient temperature to be 293.15K and the incident infrared radiation power PabsorbThe simulation result shows the response rate R of the infrared sensor designed by the invention is 1 muWSSpecific detectivity of 5446.98V/W
Typical values of response rate and specific detection rate of the traditional uncooled infrared sensor are 202.8V/W and 202.8V/W
(training of the nanometer-type polycrystalline silicon with phosphor-boundary Characterization of enhanced thermal properties and its application in associated sensors, Zhou H, Kropelnicki P, Lee C, Nanoscale, Issue 2, pages 532 + 541,14 January 2015). Compared with the traditional uncooled infrared sensor, the uncooled infrared sensor based on the spinning Seebeck effect has the advantages that the response rate is higher by one order of magnitude and higher by two orders of magnitude than the detection rate. The response rate marks the sensitivity degree of the device, and the higher response rate indicates that the infrared sensor designed by the invention can respond to infrared radiation more sensitively compared with the traditional uncooled infrared sensor; the higher specific detection rate represents the noise level of the device, and the infrared sensor designed by the invention has lower noise and can detect smaller infrared radiation compared with the traditional uncooled infrared sensor.
Fig. 3-6 show the effect of varying different device parameters on device performance, respectively. FIG. 3 shows that device performance first rises and then falls with increasing device length, indicating that the device length should be moderate; FIG. 4 shows that device performance increases with increasing device width, indicating that the device width should not be too small; fig. 5 shows that the device performance increases with the decrease of the thickness of the sensitive material 130, and the thickness of the sensitive material 130 should be as small as possible under the premise of ensuring the film forming quality; fig. 6 shows that as the area ratio of the infrared absorption material 140 to the sensitive material 130 increases, the response rate of the device continuously decreases, and increases and then decreases compared with the detection rate, which indicates that the area of the infrared absorption material 140 should be 30% -50%.
The invention provides an uncooled infrared sensor device based on a spinning Seebeck effect, which has one order of magnitude higher response rate and two orders of magnitude higher detection rate compared with the traditional uncooled infrared sensor, can detect infrared radiation more sensitively and has lower noise. It should be noted that the protection scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application are intended to be covered by the protection scope of the present application.
Claims (8)
1. The uncooled infrared sensor device based on the spinning Seebeck effect is characterized in that the uncooled infrared sensor device (100) comprises a silicon substrate (110), a silicon dioxide substrate (120), a sensitive material layer (130), an infrared absorption layer (140), a paramagnetic material layer (150) and an electrode layer (160) which are sequentially arranged from bottom to top;
a heat insulation cavity is arranged at the center of the silicon substrate (110);
the silicon dioxide substrate (120) is deposited above the silicon substrate (110), and heat insulation gaps (170) are arranged on the upper surface of the silicon dioxide substrate (120), particularly near the edges of three side surfaces of the sensitive material layer (130), and are used for preventing heat conduction along the side surfaces of the sensitive material layer (130);
the sensitive material layer (130) is formed by depositing a sensitive material film with a spinning Seebeck effect;
the infrared absorption layer (140) is formed by depositing an infrared absorption material film, the area of the infrared absorption layer is smaller than that of the sensitive material layer, and the infrared absorption layer is arranged above the sensitive material layer (130) at the side far away from the side where the heat insulation gap is not arranged;
the paramagnetic material layer (150) is formed by evaporation of paramagnetic materials into a narrow strip shape, is positioned above the sensitive material layer (130) on one side without the heat insulation gap, and converts spin current into voltage by utilizing the inverse spin Hall effect;
two output terminals in the electrode layer (160) are respectively evaporated at two ends of the narrow strip-shaped paramagnetic material layer and used for measuring the voltage output of the uncooled infrared sensor device.
2. The uncooled infrared sensor apparatus of claim 1, wherein a phononic crystal structure having a hole structure is further formed on the film of the sensitive material having the spin seebeck effect to reduce the thermal conductivity of the material.
3. Uncooled infrared sensor apparatus according to claim 1 or 2, characterized in that, when the infrared radiation is absorbed by the infrared absorbing layer (140) causing its temperature to rise, a temperature difference deltat is generated at both ends in the length direction of the sensitive material layer (130) having the spin seebeck effect, due to the self-tapping beck effect, the temperature difference deltaT will cause a spinning voltage to be generated across the length of the layer of sensitive material (130), the spin voltage causes the paramagnetic material layer (150) to have unbalanced spin polarization intensity along the length direction of the sensitive material layer, thereby generating spin current with spin polarization vector, voltage outputs are generated across the paramagnetic material layer (150) and are read through two output terminals in the electrode layer (160) to enable measurement of infrared radiation.
4. Uncooled infrared sensor apparatus according to claim 1 or 2, characterized in that the material of the sensitive material layer (130) is indium antimonide, iron oxide and iron-nickel alloy iron or other materials with spin seebeck effect.
5. Uncooled infrared sensor apparatus according to claim 1 or 2, characterized in that the material of the infrared absorbing layer (140) is black gold, a mixture of carbon nanotubes and SU-8 or silicon nitride.
6. Uncooled infrared sensor apparatus according to claim 1 or 2, characterized in that the material of the paramagnetic material layer (150) is platinum.
7. Uncooled infrared sensor apparatus according to claim 1 or 2, characterized in that the material of the electrode layer (160) is aluminium.
8. The uncooled infrared sensor apparatus according to claim 1 or 2, wherein the silicon substrate (110) has a length and width of 240 μm and 150 μm, respectively, a thickness of 200 μm, a cavity size at a center position thereof has a length of 180 μm, a width of 110 μm, and a thickness of 200 μm, the silicon dioxide substrate (120) has a length and width identical to those of the silicon substrate and a thickness of 2 μm, the sensitive material layer (130) has a length and width of 160 μm and 90 μm, respectively, and a thickness of 0.05 μm, the infrared absorption layer (140) has a length and width of 80 μm and 90 μm, respectively, and a thickness of 1 μm, an area of which occupies 50% of an area of the sensitive material layer (130), the paramagnetic material layer (150) has a thickness of 0.05 μm, and the electrode layer (160) has a thickness of 0.1 μm.
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