CN102818638B - Infrared detector of micrometering bolometer and manufacture method thereof - Google Patents
Infrared detector of micrometering bolometer and manufacture method thereof Download PDFInfo
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- CN102818638B CN102818638B CN201110150974.4A CN201110150974A CN102818638B CN 102818638 B CN102818638 B CN 102818638B CN 201110150974 A CN201110150974 A CN 201110150974A CN 102818638 B CN102818638 B CN 102818638B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000005260 corrosion Methods 0.000 claims abstract description 22
- 230000007797 corrosion Effects 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000005516 engineering process Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims description 76
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 75
- 239000000377 silicon dioxide Substances 0.000 claims description 38
- 235000012239 silicon dioxide Nutrition 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 2
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- 238000005057 refrigeration Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
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- 238000003745 diagnosis Methods 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
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Abstract
The invention relates to an infrared detector of a micrometering bolometer and a manufacture method thereof. The manufacture method includes the following steps: A. adopting the CMOS process to manufacture a signal processing circuit and simultaneously forming an infrared probe detector unit semiproduct; B. adopting the drying etching process to etch the infrared probe detector unit semiproduct to form an etching window; C. precipitating a protection layer and etching the protection layer to form a lateral wall; and D. etching a silicon substrate through the corrosion window and manufacturing a suspended arm and an infrared absorbing layer in an infrared detector unit to form a cavity. The manufacture method of the micrometering bolometer and the infrared detector adopts combination of the CMOS process and the MEMS process in the commercial criterion in the market, and integrates infrared detection units and the signal processing circuit on one chip. The manufacture process is completely compatible with the standard CMOS process, easy to integrate and suitable for large batch production. Compared with the prior SOI technology which is not mature, the manufacture method greatly reduces cost and is apt to achieve industrial production.
Description
[technical field]
The present invention relates to infrared eye technical field, particularly relate to a kind of micro-metering bolometer infrared eye and preparation method thereof.
[background technology]
Infrared detector array imaging technique is the high-tech complex art integrating infra-red material, optical technology, Refrigeration Technique and microelectric technique.At present, infrared imagery technique has also been widely used in industry and civilian all fields, as infrared resource detection, Infrared Thermal Analysis and comprise all kinds of infrared imaging of tissue and Infrared Fault Diagnosis etc.Can predict, along with the further reduction of manufacturing cost, its application also can expand rapidly, and its wide market outlook are conclusive.
Thermal infrared detector absorbs the thermal effect of infrared radiation based on thermo-sensitive material, mainly comprises micro-metering bolometer, thermoelectric pile and pyroelectric detector three types.Their advantage be volume little, low in energy consumption, needn't freeze and response spectrum wide waveband etc.Wherein, micro-metering bolometer based on PN junction temperature effect is simpler than pyroelectric detector in preparation, responsiveness is again far above thermoelectric pile, and it is easy to integrated with CMOS sensing circuit, therefore this is the Main way manufacturing non-refrigeration infrared detector array at present.
Worldwide, various countries researchist conducts extensive research realizing being applicable to the ultra-large infrared detector array of various application with low cost, the subject matter realizing low cost infrared eye go out single-chip integration and with CMOS technology technology compatible in.
[summary of the invention]
Based on this, be necessary to provide manufacture method that is a kind of and the micro-metering bolometer infrared eye of standard CMOS process compatibility.
A preparation method for micro-metering bolometer infrared eye, comprises the following steps: steps A, adopts CMOS technology to manufacture signal processing circuit, forms infrared detector unit semi-manufacture simultaneously; Step B, adopts dry etch process etching infrared detector unit semi-manufacture, forms corrosion window; Step C, deposit protective seam, and etch described protective seam formation side wall; Step D, by described corrosion window corrosion silicon substrate, makes unsettled cantilever and infrared absorption layer, and forms cavity in infrared detector unit.
Preferably, described steps A comprises the following steps: steps A 1, designs the domain of described micro-metering bolometer infrared eye; Steps A 2, adopts standard CMOS process to carry out flow, obtains being integrated with described signal processing circuit and the half-finished chip of infrared detector unit.
Preferably, described step B comprises the following steps: step B1, take metal level as masking layer, etches the half-finished silicon dioxide layer of described infrared detector unit; Step B2, after described silicon dioxide layer etching, continues, with dry etch process etch silicon substrate, to form described corrosion window.
Preferably, described step C adopts protective seam described in the deposit of low-pressure chemical vapor phase deposition technique.
Preferably, the corrosion in described step D is wet etching.
There is a need to provide a kind of micro-metering bolometer infrared eye adopting the method manufacture to obtain.
A kind of micro-metering bolometer infrared eye, comprise interconnective signal processing circuit and infrared detector unit, described infrared detector unit comprises silicon substrate, isolation channel, infrared absorption layer and cantilever; Described isolation channel, infrared absorption layer and cantilever are located on described silicon substrate, are provided with the corrosion window of engraved structure between described infrared absorption layer and isolation channel, and described infrared absorption layer is hanging structure and is linked together by cantilever and isolation channel; The cantilever polysilicon that described cantilever comprises arm silicon substrate, is located at the cantilever silicon dioxide layer on described arm silicon substrate and is located in described cantilever silicon dioxide layer, the both sides of described cantilever are cantilever side wall; Described infrared absorption layer comprises absorption layer silicon substrate, the silicon dioxide absorption layer be located on described absorption layer silicon substrate, be located in described absorption layer silicon substrate and the well region had a common boundary with described silicon dioxide absorption layer, be located at the absorption polysilicon in described silicon dioxide absorption layer and be located at the absorption metal level in described absorption silicon dioxide absorption layer, and the both sides of described infrared absorption layer are absorption side wall; Described infrared absorption layer also comprises electrical cable, and described absorption metal level is by described electrical cable and well region and absorb polysilicon and be connected; Form cavity between described infrared absorption layer and silicon substrate, between described cantilever and silicon substrate, described cantilever polysilicon and absorption polysilicon are interconnected.
Preferably, described silicon substrate is N-type silicon, and described well region is P+ type trap; Or described silicon substrate is P-type silicon, well region is N+ type trap.
Preferably, described cantilever is inflection structure or linear structure.
Preferably, the material of described side wall is silicon nitride or silicon dioxide.
Preferably, the quantity of described infrared detector unit is multiple and rearranges infrared focal plane array.
The preparation method of above-mentioned micro-metering bolometer infrared eye, adopt commercial criterion CMOS technology and MEMS (Micro-Electro-Mechanical Systems on market, microelectromechanical-systems) technique combines, can by infrared detector unit and signal processing circuit on a single die integrated, its manufacture craft and standard CMOS process are completely compatible, be easy to integrated, be applicable to very much producing in enormous quantities.Relative to employing cost intensive and the jejune SOI of technique (Silicon-On-Insulator, silicon on insulation course) technology, cost is reduced greatly, is easy to realize industrial volume production.
[accompanying drawing explanation]
Fig. 1 is the vertical view of micro-metering bolometer infrared detector array in an embodiment;
Fig. 2 is the vertical view of single infrared detector unit in Fig. 1;
Fig. 3 is the cross-sectional view of infrared detector unit shown in Fig. 2 along A-A direction;
Fig. 4 is the process flow diagram of the preparation method of micro-metering bolometer infrared eye in an embodiment;
Fig. 5 is the half-finished cross-sectional view of infrared detector unit that in an embodiment, steps A is formed;
Fig. 6 is the cross-sectional view of infrared detector unit after step B completes;
Fig. 7 is the cross-sectional view of infrared detector unit after step C completes.
10-isolation channel 20-corrosion window 30-infrared absorption layer 40-cantilever
110-metal level 120-side wall 130-well region 150-silicon dioxide layer
160-polysilicon 170-silicon substrate 180-cavity 190-electrical cable
[embodiment]
For enabling object of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Micro-metering bolometer infrared eye comprises interconnective signal processing circuit and infrared detector unit.Infrared detector unit in micro-metering bolometer infrared eye can be used alone, and also can rearrange infrared focal plane array (i.e. micro-metering bolometer infrared detector array) by multiple infrared detector unit.Fig. 1 is the vertical view of micro-metering bolometer infrared detector array in an embodiment, and Fig. 2 is the vertical view of single infrared detector unit in Fig. 1.Infrared detector unit comprises silicon substrate, also comprises the isolation channel 10 be located on silicon substrate, infrared absorption layer 30 and cantilever 40.Be provided with the corrosion window 20 (being formed by etching technics) of engraved structure between infrared absorption layer 30 and isolation channel 10, infrared absorption layer 30 is hanging structure, links together by means of only cantilever 40 and isolation channel 10.
Fig. 3 is the cross-sectional view of infrared detector unit shown in Fig. 2.Isolation channel 10 comprises the isolation channel side wall 121 being located at edge and the isolation channel silicon dioxide layer 151 be located on silicon substrate 170.Isolation channel 10 is for realizing the electric isolution between each infrared detector unit.
Cantilever 40 comprises arm silicon substrate 174, the cantilever silicon dioxide layer 154 be located on arm silicon substrate 174, the cantilever polysilicon 164 be located in cantilever silicon dioxide layer 154, and the both sides of cantilever 40 are cantilever side wall 124.In the present embodiment, cantilever 40 is the inflection structure shown in Fig. 2.In other embodiments, cantilever 40 also can adopt linear structure.
Infrared absorption layer 30 comprises absorption layer silicon substrate 173, the silicon dioxide absorption layer 153 be located on absorption layer silicon substrate 173, be located in absorption layer silicon substrate 173 and the well region 130 had a common boundary with silicon dioxide absorption layer 153, the absorption metal level 113 being located at the absorption polysilicon 163 in silicon dioxide absorption layer 153 and being located in silicon dioxide absorption layer 153, and the both sides of infrared absorption layer 30 are absorption side wall 123.Infrared absorption layer 30 also comprises electrical cable 190, absorbs metal level 113 by electrical cable 190 and well region 130 and absorb polysilicon 163 and be connected.
Between cantilever 40 and silicon substrate 170, between infrared absorption layer 30 and silicon substrate 170, cavity 180 is formed after part silicon substrate 170 is etched away.Side wall 120 comprises isolation channel side wall 121, cantilever side wall 124, absorbs side wall 123.Silicon dioxide layer 150 comprises isolation channel silicon dioxide layer 151, silicon dioxide absorption layer 153, cantilever silicon dioxide layer 154.Polysilicon 160 comprises cantilever polysilicon 164 and absorbs polysilicon 163, and cantilever polysilicon 164 and absorption polysilicon 163 are interconnective.
In the present embodiment, the material of side wall 120 is silicon nitrides.The material of side wall 120 also can be silicon dioxide in other embodiments.
The effect of cavity 180 is adiabatic.After forming cavity 180, infrared absorption layer 30 just completely cuts off with silicon substrate 170 (this paragragh indication silicon substrate 170 does not comprise arm silicon substrate 174 and absorption layer silicon substrate 173), infrared absorption layer 30 would not be absorbed heat by silicon substrate 170 and be dispelled the heat, ensure that the temperature effect of PN junction, device can normally be worked.
Infrared absorption layer 30 is connected with signal processing circuit by cantilever 40, and the volt-ampere characteristic that the temperature variation of PN junction causes changes by electrical cable 190, and------the cantilever polysilicon 164 of cantilever 40 conducts to signal processing circuit to electrical cable 190---absorption polysilicon 163---to absorb metal level 113.Signal processing circuit is produced on the periphery of micro-metering bolometer infrared detector array, is integrated on same silicon chip (chip) with micro-metering bolometer infrared detector array.
Silicon substrate 170 is the general common silicon chips adopted in CMOS technology.In the present embodiment, silicon substrate 170 (comprising arm silicon substrate 174 and absorption layer silicon substrate 173) is N-type silicon, and well region 130 is the P+ type traps formed by the ion implantation in CMOS technology.In other embodiments, silicon substrate 170 also can be P-type silicon, and well region 130 is N+ type traps.
Above-mentioned micro-metering bolometer infrared eye is based on PN junction temperature effect, utilize the thermal effect of infrared radiation, by infrared absorbing material silicon dioxide, infrared energy is converted to heat energy, the PN junction temperature on silicon substrate is caused to change, the volt-ampere characteristic of PN junction changes thereupon, again by knowing that this change is gone forward side by side row relax with the micro-metering bolometer infrared detector array signal processing circuit be on same silicon substrate, thus obtain the information of infrared radiation.
Fig. 4 is the process flow diagram of the preparation method of micro-metering bolometer infrared eye in an embodiment, comprises the following steps.
Steps A, adopts CMOS technology to manufacture signal processing circuit, forms infrared detector unit semi-manufacture.Fig. 5 is the half-finished cross-sectional view of infrared detector unit in an embodiment, comprises silicon substrate 170, the silicon dioxide layer 150 be located on silicon substrate 170, is located in silicon substrate 170 and the well region 130 had a common boundary with silicon dioxide layer 150, is located at polysilicon 160 in silicon dioxide layer 150 and metal level 110.Infrared detector unit semi-manufacture also comprise electrical cable 190, and the metal level 110 of part is connected by the polysilicon layer 160 of electrical cable 190 with well region 130 and part.
In the present embodiment, steps A specifically comprises the following steps:
Steps A 1, the domain of design micro-metering bolometer infrared eye.
Steps A 2, adopts standard CMOS process to carry out flow, obtains being integrated with signal processing circuit and the half-finished chip of infrared detector unit.
CMOS technology is adopted to manufacture infrared detector unit semi-manufacture according to the domain of micro-metering bolometer infrared eye.Utilize metal to can be used as the principle of dry etching masking layer, needed by late device release process the region CMOS technology of corrosion to make metal level 110 and cross corrosion window 20.Micro-metering bolometer infrared eye comprises interconnective signal processing circuit and infrared detector unit.Infrared detector unit in micro-metering bolometer infrared eye can be used alone, and also can rearrange infrared focal plane array (i.e. micro-metering bolometer infrared detector array) by multiple infrared detector unit.Signal processing circuit is produced on the periphery of micro-metering bolometer infrared detector array, is integrated on same silicon chip (chip) with micro-metering bolometer infrared detector array.
Step B, adopts dry etch process etching infrared detector unit semi-manufacture, forms corrosion window 20 as shown in Figure 2.Fig. 6 is the cross-sectional view of infrared detector unit after step B completes.In the present embodiment, step B specifically comprises the following steps:
Step B1, with metal level 110 for masking layer, etches the half-finished silicon dioxide layer 150 of infrared detector unit.Metal level 110 can be used as the masking layer of dry etching, and the structure below guard metal layer 110 is not etched.
Step B2, after silicon dioxide layer 150 etches, continuation dry etch process etch silicon substrate 170 to desired depth, forms corrosion window 20 as shown in Figure 2.
Step C, deposit protective seam, and etch-protecting layer forms side wall 120.Fig. 7 is the cross-sectional view of infrared detector unit after step C completes.In the present embodiment, deposit adopts low-pressure chemical vapor phase deposition technique, and side wall 120 has anticorrosive effect to the corrosive liquid that follow-up wet etching adopts, and can protect the position being coated with side wall 120.
Step D, by corrosion window corrosion silicon substrate 170, makes unsettled cantilever 40 and infrared absorption layer 30, and forms cavity 180 (as shown in Figure 3) in infrared detector unit.Namely infrared detector unit is as shown in Figure 3 obtained after step D completes.In the present embodiment, corrosion in step D adopts wet etching, and metal level 110 is exposed to the extraneous part liquid that is corroded and removes in the lump, the absorption metal level 113 in metal level 110 protect by silicon dioxide absorption layer 153 and can not be corroded.
The preparation method of above-mentioned micro-metering bolometer infrared eye, commercial criterion CMOS technology on market is adopted to combine with MEMS technology, can by infrared detector unit and signal processing circuit on a single die integrated, its manufacture craft and standard CMOS process are completely compatible, be easy to integrated, be applicable to very much producing in enormous quantities.Relative to employing cost intensive and the jejune SOI of technique (Silicon-On-Insulator, silicon on insulation course) technology, cost is reduced greatly, is easy to realize industrial volume production.Adopt side wall protection; utilize corrosive liquid anisotropic etch silicon substrate in the principle of (111) crystal face self-stopping technology; corrosion release PN junction and infrared absorption Rotating fields; effectively can avoid the conventional problem such as lack of homogeneity, wayward and electric contact area protection difficulty adopting galvanochemistry self-stopping technology wet corrosion technique release PN junction and infrared absorption layer to produce, improve the yields of product greatly.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. a micro-metering bolometer infrared eye, is characterized in that, comprises interconnective signal processing circuit and infrared detector unit, and described infrared detector unit comprises silicon substrate, isolation channel, infrared absorption layer and cantilever;
Described isolation channel, infrared absorption layer and cantilever are located on described silicon substrate, are provided with the corrosion window of engraved structure between described infrared absorption layer and isolation channel, and described infrared absorption layer is hanging structure and is linked together by cantilever and isolation channel;
The cantilever polysilicon that described cantilever comprises arm silicon substrate, is located at the cantilever silicon dioxide layer on described arm silicon substrate and is located in described cantilever silicon dioxide layer, the both sides of described cantilever are cantilever side wall;
Described infrared absorption layer comprises absorption layer silicon substrate, the silicon dioxide absorption layer be located on described absorption layer silicon substrate, be located in described absorption layer silicon substrate and the well region had a common boundary with described silicon dioxide absorption layer, the absorption metal level being located at the absorption polysilicon in described silicon dioxide absorption layer and being located in described silicon dioxide absorption layer, and the both sides of described infrared absorption layer are absorption side wall; Described infrared absorption layer also comprises electrical cable, and described absorption metal level is by described electrical cable and well region and absorb polysilicon and be connected; Form cavity between described infrared absorption layer and silicon substrate, between described cantilever and silicon substrate, described cantilever polysilicon and absorption polysilicon are interconnected.
2. micro-metering bolometer infrared eye according to claim 1, is characterized in that, described silicon substrate is N-type silicon, and described well region is P+ type trap; Or described silicon substrate is P-type silicon, well region is N+ type trap.
3. micro-metering bolometer infrared eye according to claim 1, is characterized in that, described cantilever is inflection structure or linear structure.
4. micro-metering bolometer infrared eye according to claim 1, is characterized in that, the material of described side wall is silicon nitride or silicon dioxide.
5. micro-metering bolometer infrared eye according to claim 1, is characterized in that, the quantity of described infrared detector unit is multiple and rearranges infrared focal plane array.
6. a preparation method for micro-metering bolometer infrared eye, comprises the following steps:
Steps A, adopts CMOS technology to manufacture signal processing circuit, forms infrared detector unit semi-manufacture simultaneously;
Step B, adopts dry etch process etching infrared detector unit semi-manufacture, forms corrosion window;
Described step B comprises the following steps:
Step B1 take metal level as masking layer, etches the half-finished silicon dioxide layer of described infrared detector unit;
Step B2, after described silicon dioxide layer etching, continues, with dry etch process etch silicon substrate, to form described corrosion window;
Step C, deposit protective seam, and etch described protective seam formation side wall;
Step D, by described corrosion window wet etching silicon substrate, makes unsettled cantilever and infrared absorption layer, and forms cavity in infrared detector unit; Described side wall has anticorrosive effect to the corrosive liquid that wet etching adopts, and protects the position being coated with side wall; Described side wall comprises the cantilever side wall being formed at cantilever both sides and the absorption side wall being formed at infrared absorption layer both sides.
7. the preparation method of micro-metering bolometer infrared eye according to claim 6, is characterized in that, described steps A comprises the following steps:
Steps A 1, designs the domain of described micro-metering bolometer infrared eye;
Steps A 2, adopts standard CMOS process to carry out flow, obtains being integrated with described signal processing circuit and the half-finished chip of infrared detector unit.
8. the preparation method of micro-metering bolometer infrared eye according to claim 6, is characterized in that, described step C adopts protective seam described in the deposit of low-pressure chemical vapor phase deposition technique.
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| CN103076099B (en) * | 2013-01-23 | 2015-09-16 | 中国科学院微电子研究所 | Single-chip integration infrared focal plane detector |
| CN113659028B (en) * | 2021-02-01 | 2022-07-26 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659027B (en) * | 2021-02-01 | 2022-07-22 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113091919A (en) * | 2021-04-12 | 2021-07-09 | 上海芯物科技有限公司 | Thermopile sensor and manufacturing method thereof |
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| CN101202242A (en) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | Technological process for making shallow ridges isolation structure |
| CN101561319A (en) * | 2009-06-02 | 2009-10-21 | 北京大学 | Capacitive MEMS non-refrigerated infrared detector and preparation method thereof |
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| CN101202242A (en) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | Technological process for making shallow ridges isolation structure |
| CN101561319A (en) * | 2009-06-02 | 2009-10-21 | 北京大学 | Capacitive MEMS non-refrigerated infrared detector and preparation method thereof |
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Application publication date: 20121212 Assignee: Shenzhen Zhangchao Technology Co.,Ltd. Assignor: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES Contract record no.: X2023980043397 Denomination of invention: Micro bolometer infrared detector and its preparation method Granted publication date: 20150415 License type: Common License Record date: 20231013 |
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