JP5884568B2 - Manufacturing method of thermal infrared sensor - Google Patents

Description

The present invention relates to a method of manufacturing a thermal infrared Sensor, in particular, to a method for manufacturing a thermal infrared Sensor for receiving infrared rays from the rear surface side of the substrate.

  For thermal infrared sensors such as thermal infrared image sensors, there is a technology that increases the sensitivity of the sensor by forming a bridge structure by etching away the substrate around the infrared absorbing film and separating the infrared absorbing film and the substrate. is there. As a thermal infrared sensor, one having a configuration in which infrared rays are received from the back side (substrate side) of an infrared absorption film supported by heat insulation is known.

  For example, Patent Document 1 discloses a thermal infrared sensor in which an infrared absorption film, a temperature sensor, and a signal readout wiring are formed on a microbridge structure separated from a substrate. The infrared sensor is configured to receive infrared rays from the back side of the substrate. Further, this infrared sensor is provided with antireflection films on both sides of the substrate for the purpose of preventing reflection of infrared rays incident from the back side of the substrate.

  FIG. 18 is a schematic plan view and a sectional view showing an example of a conventional thermal infrared sensor. In FIG. 18, the cross-sectional view corresponds to the X-X ′ position in the plan view.

  The sensor unit 101 is supported in a hollow shape with respect to the semiconductor substrate 103 by the beam unit 102. The semiconductor substrate 103 under the sensor portion 101 and the beam portion 102 is removed to form a cavity portion 104. For this reason, the sensor unit 101 is separated from the semiconductor substrate 103, and sensitivity as an infrared sensor is enhanced. The sensor unit 101 includes an infrared absorption film 105 and a temperature sensor 106.

  This infrared sensor is configured such that infrared light is incident from the back side of the semiconductor substrate 103. The infrared absorption film 105 is exposed in the cavity 104. This infrared sensor detects an infrared ray by capturing a temperature change caused by the infrared ray incident from the semiconductor substrate 103 being absorbed by the infrared absorption film 105 with the temperature sensor 106. In order to take out a signal from the temperature sensor 106 to the outside, wiring 107 is formed in the sensor portion 101 and the beam portion 102.

  In addition, a thermal infrared sensor that receives infrared rays from the surface side of the substrate, and a technology that suppresses infrared reflection and raises the sensitivity of the sensor by forming an antireflection structure with a sub-wavelength structure is known. (For example, refer nonpatent literature 1.).

Non-Patent Document 2 discloses that unevenness arranged two-dimensionally becomes an antireflection structure.
As shown in FIG. 19, when a sub-wavelength periodic structure 202 in which quadrangular pyramid-like irregularities 201 are arranged on the surface is formed, an effective refractive index intermediate between the member 203 on which the irregularities 201 are formed and the surrounding medium is obtained. This is equivalent to the presence of a thin film layer, and reflection at this surface is reduced.

  Non-Patent Document 1 shows that the sub-wavelength structure can provide an antireflection effect even for infrared rays. Further, it is shown that the sub-wavelength structure formed on the element surface is not limited to the cone shape, but the antireflection effect can be obtained even in the columnar shape.

  The subwavelength structure will be described. A periodic grating in which a sub-wavelength structure (a structure having a period shorter than the wavelength of light to be used) is formed on the surface of the optical element does not generate a diffracted wave, but the structure strongly affects the transmission characteristics and reflection characteristics of the light wave.

  A periodic grating having a sub-wavelength structure is substantially equivalent to a medium having an average refractive index of the base material of the optical element and the surrounding medium with respect to the light wave. Hereinafter, an average refractive index generated by such an effect is referred to as an effective refractive index. That is, when there is no subwavelength structure, the refractive index changes sharply at the interface between the optical element and the surrounding medium, whereas when the subwavelength structure is formed, the optical element and the surrounding medium The change in the refractive index at the interface becomes moderate, and an antireflection effect is obtained. Thus, an antireflection structure can be formed by designing the subwavelength structure well.

  In the infrared sensor of the type that receives infrared rays from the back side of the substrate, the anti-reflection structure or anti-reflection film is not formed on the light-receiving surface (the surface facing the substrate) of the infrared absorption film separated from the substrate. There is a problem that a part of the infrared light incident from the back side of the absorption film is reflected and the sensor sensitivity is lowered.

  For example, in the infrared sensor shown in FIG. 18, when infrared light is incident from the back side of the semiconductor substrate 103, reflection occurs at the interface between the cavity 104 and the infrared absorption film 105. However, it is difficult to form an antireflection film or the like at the interface between the cavity 104 and the infrared absorption film 105, and reflection cannot be prevented.

  For example, the back surface of the infrared absorption film 105 is removed until the semiconductor substrate 103 under the sensor unit 101 and the beam unit 102 is etched away to form the cavity 104 for thermally separating the sensor unit 101 from the semiconductor substrate 103. Is not exposed. Therefore, the back surface of the infrared absorption film 105 cannot be processed until the cavity 104 is formed.

Moreover, it is difficult to form a resist on the back surface of the semiconductor substrate 103 by photolithography after the cavity 104 is formed. In particular, when a plurality of sensor portions 101 are formed on the same semiconductor substrate 103, a plurality of cavities 104 are formed in the semiconductor substrate 103, so that it is more difficult to form a resist on the back surface of the semiconductor substrate 103. .
Thus, it was almost impossible to selectively form an antireflection structure on the back surface of the infrared absorption film 105 of the sensor unit 101.

  An object of the present invention is to reduce infrared reflectance on the back surface of an infrared absorption film in a thermal infrared sensor of a type that receives infrared light from the back surface side of the infrared absorption film.

A manufacturing method of a thermal infrared sensor according to the present invention includes an infrared absorption film separated from a semiconductor substrate by a cavity and a temperature sensor that detects a temperature change of the infrared absorption film. And the following processes (A) to (E) are included in that order.
(A) A step of forming a concave pattern for forming a subwavelength structure on the surface of the semiconductor substrate at a position where a sensor part of a thermal infrared sensor is to be formed by photolithography and etching techniques;
(B) performing a thermal oxidation process to form the infrared absorption film made of a silicon oxide film having a sub-wavelength structure formed from the recess pattern on the surface of the semiconductor substrate;
(C) forming the temperature sensor on the infrared absorption film;
(D) forming an interlayer insulating film, wiring, and protective film in order to take the potential of the temperature sensor;
(E) The semiconductor substrate in the portion immediately below the infrared absorption film is removed from the back surface side of the semiconductor substrate by the photoengraving technique and etching technique until the infrared absorption film is reached, and under the infrared absorption film Forming the cavity.

  The thermal infrared sensor of the present invention includes an infrared antireflection structure having a subwavelength structure on the surface (back surface) of the infrared absorption film on the semiconductor substrate side, and the manufacturing method of the present invention includes the surface of the infrared absorption film on the semiconductor substrate side. Since a thermal infrared sensor having an infrared antireflection structure consisting of a sub-wavelength structure is formed, a thermal infrared sensor of a type that receives infrared rays from the back side of the infrared absorption film, the infrared ray on the back side of the infrared absorption film The reflectance of the thermal infrared sensor can be improved.

It is the schematic top view and sectional drawing for demonstrating one Example of a thermal type infrared sensor. It is a schematic sectional drawing for demonstrating the other Example of a thermal type infrared sensor. It is process sectional drawing for demonstrating one Example of a manufacturing method. It is a figure which shows an example of the concave pattern for subwavelength structure formation formed at the process (1) of the Example, and the silicon oxide film used as the infrared rays absorption film formed at the process (2) of this Example. It is a figure which shows the other example of the recessed pattern for subwavelength structure formation formed at the process (1) of the Example, and the silicon oxide film used as the infrared rays absorption film formed at the process (2) of this Example. is there. The figure which shows the further another example of the recessed part pattern for subwavelength structure formation formed at the process (1) of the Example, and the silicon oxide film used as the infrared rays absorption film formed at the process (2) of this Example It is. The figure which shows the further another example of the recessed part pattern for subwavelength structure formation formed at the process (1) of the Example, and the silicon oxide film used as the infrared rays absorption film formed at the process (2) of this Example It is. It is the schematic top view and sectional drawing for demonstrating the other Example of a thermal type infrared sensor. It is a schematic sectional drawing for demonstrating the further another Example of a thermal type infrared sensor. It is process sectional drawing for demonstrating the other Example of the manufacturing method. It is a schematic sectional drawing for demonstrating the further another Example of a thermal type infrared sensor. It is a schematic sectional drawing for demonstrating the further another Example of a thermal type infrared sensor. It is the schematic top view and sectional drawing for demonstrating other Example of a thermal type infrared sensor. FIG. 5 is a schematic cross-sectional view for explaining still another embodiment of a thermal infrared sensor. It is the schematic top view and sectional drawing for demonstrating other Example of a thermal type infrared sensor. It is the schematic top view and sectional drawing for demonstrating other Example of a thermal type infrared sensor. It is a schematic sectional drawing for demonstrating the further another Example of a thermal type infrared sensor. It is the schematic top view and sectional drawing which show an example of the conventional thermal type infrared sensor. It is a schematic perspective view for demonstrating that the unevenness arranged two-dimensionally becomes an antireflection structure.

FIG. 1 is a schematic plan view and cross-sectional view for explaining an embodiment of a thermal infrared sensor. In FIG. 1, the cross-sectional view corresponds to the AA ′ position in the plan view.
The sensor unit 1 is supported in a hollow shape with respect to a silicon substrate (semiconductor substrate) 5 by a beam unit 3. The semiconductor substrate 5 under the sensor part 1 and the beam part 3 is removed to form a cavity part 7. That is, the cavity 7 is formed by a through hole formed in the semiconductor substrate 5.

  An infrared absorption film 9, a temperature sensor 11, a wiring 13, an interlayer insulating film 15, and a protective film 17 are formed on the sensor unit 1. An infrared absorption film 9, a wiring 13, an interlayer insulating film 15, and a protective film 17 are formed on the beam portion 3.

  The infrared absorption film 9 is formed of a silicon oxide film. The infrared absorption film 9 is separated from the silicon substrate 5 by the cavity 7. The infrared absorption film 9 has an infrared reflection prevention structure including a sub-wavelength structure 9a on the back surface (surface on the silicon substrate 5 side). In the thermal infrared sensor of this embodiment, the infrared absorbing film 9 in the beam portion 3 is

  The temperature sensor 11 is formed on the infrared absorption film 9. In the present invention, as the temperature sensor, for example, a PN junction diode, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), thermistor, bolometer, thermopile, pyroelectric body, or the like can be used. In this embodiment, the temperature sensor 11 is formed by a PN junction diode formed on a polysilicon film formed on the infrared absorption film 9. In addition, the temperature sensor 11 arrange | positioned at the sensor part 1 may be one, and plural may be sufficient as it.

  A silicon oxide film 19 is formed on the surface of the silicon substrate 5 at a position different from the sensor part 1 and the beam part 3. The silicon oxide film 19 is formed at the same time as the infrared absorption film 9, but does not include the sub-wavelength structure 9a. However, the silicon oxide film 19 may have a sub-wavelength structure 9 a on the joint surface with the silicon substrate 5 as in the case of the infrared absorption film 9. An interlayer insulating film 15 and a protective film 17 are also formed on the silicon oxide film 19.

  Openings 21 are formed in the protective film 17, the interlayer insulating film 15, the infrared absorption film 9, and the silicon oxide film 19. The positions where the sensor unit 1 and the beam unit 3 are formed are defined by the opening 21. With respect to the beam portion 3, it is sufficient if there is at least a structure portion that can support the wiring 13 and the sensor portion 1. Further, the infrared absorption film 9 in the beam portion 3 may include a sub-wavelength structure 9a as shown in FIG.

  Infrared rays are incident on the thermal infrared sensor of this embodiment from the back side of the silicon substrate 5. Since the thermal infrared sensor of this embodiment is provided with the infrared antireflection structure comprising the sub-wavelength structure 9a on the back surface of the infrared absorption film 9, the infrared reflectance on the back surface of the infrared absorption film 9 can be reduced. . Thereby, the sensitivity of the thermal infrared sensor can be improved.

  Further, as shown in FIG. 18, when the antireflection structure is not formed on the back surface of the infrared absorption film 105, it is necessary to increase the infrared absorption rate by increasing the thickness of the infrared absorption film 105. In that case, since the thickness of the sensor unit 101 is increased and the heat capacity is increased, the response speed of the thermal infrared sensor is also slow.

  In response to such a problem, the thermal infrared sensor of this embodiment includes the sub-wavelength structure 9 a on the back surface of the infrared absorption film 9, so that reflection of infrared light on the back surface of the infrared absorption film 9 is suppressed. This means that the infrared absorption film 9 can obtain an infrared absorption amount equivalent to that of the infrared absorption film 105 even if the infrared absorption film 9 is made thinner than the conventional infrared absorption film 105. Therefore, the thermal infrared sensor of this embodiment can improve the performance of the thermal infrared sensor by reducing the thermal capacity of the sensor unit 1 compared to the thermal capacity of the sensor unit 101 of the prior art.

  FIG. 3 is a process cross-sectional view for explaining an embodiment of the manufacturing method. The cross-sectional view of FIG. 3 corresponds to the A-A ′ position of FIG. 4 to 7 show the concave pattern for forming the subwavelength structure formed in the step (1) of this embodiment and the silicon oxide film to be the infrared absorption film formed in the step (2) of this embodiment. It is a figure which shows an example, respectively. 4A to 7A, FIG. 4A is a plan view of a concave pattern for forming a subwavelength structure, FIG. 4B is a cross-sectional view at the XX ′ position, and FIG. 4C is a silicon oxide film serving as an infrared absorption film FIG.

(1) For the formation of a subwavelength structure on the surface of the silicon substrate 5 at the position where the sensor unit 1 of the thermal infrared sensor is to be formed by taking into account the thermal oxidation process in the post-process (2) by photolithography and etching techniques. The concave pattern 9b is formed. In this embodiment, the concave pattern 9b is formed only at the planned formation position of the sensor unit 1, but the concave pattern 9b may be formed at a position other than the planned formation position of the sensor unit 1. For example, the concave pattern 9b may be formed at the planned formation position of the beam portion 3 or the planned formation position of the opening 21. When a plurality of sensor parts 1 are formed on the same silicon substrate 5, a concave pattern 9 b is formed on the silicon substrate 5 corresponding to the position where each sensor part 1 is formed.

An example of the concave pattern 9b will be described with reference to FIGS.
4A and 4B, regular quadrangular pyramid recess patterns 9b are arranged in a lattice pattern. In FIGS. 5A and 5B, the concave quadrangular pyramid recess patterns 9b are arranged in a grid pattern. 6A and 6B, the rectangular parallelepiped recess patterns 9b having a square bottom surface are arranged in a staggered manner. 7A and 7B, conical recess patterns 9b are arranged in a staggered manner.

  The pitch A of the concave pattern 9b needs to be equal to or less than the wavelength of the target infrared ray. For example, in the case of targeting infrared rays emitted from the human body, the wavelength is about 7 to 15 μm (micrometers), so the pitch A of the recesses needs to be at least 7 μm or less. The shape of these recess patterns 9b can be formed by anisotropic dry etching, and it is possible to form conical recesses or vertical recesses by changing the etching conditions. In addition, the shape and arrangement | positioning of the recessed part pattern 9b are not limited to the thing of FIGS. For example, the concave pattern 9b may be a truncated cone, a pyramid having a bottom surface other than a square, or a truncated pyramid.

Returning to FIG. 3, the description of the manufacturing process will be continued.
(2) A thermal oxidation process is performed to form a silicon oxide film 19 on the surface of the silicon substrate 5. At the interface between the silicon oxide film 19 and the silicon substrate 5, a sub-wavelength structure 9a is formed from the recess pattern 9b. In this embodiment, the silicon oxide film 19 of the sensor unit 1 and the beam unit 3 constitutes an infrared absorption film 9 (FIGS. 4C, 5C, 6C, and 7C). reference.).

(3) The temperature sensor 11 is formed on the infrared absorption film 9. As the temperature sensor 11, for example, a PN junction diode, MOSFET, thermistor, bolometer, thermopile, pyroelectric body, or the like can be used. As an example, a polysilicon film is deposited, and an ion implantation process or an impurity diffusion process is performed on the polysilicon film to form the temperature sensor 11 formed of a PN junction diode. Thereby, the temperature sensor 11 can be formed easily.

(4) In order to take the potential of the temperature sensor 11, the interlayer insulating film 15, the contact hole, the wiring 13 and the protective film 17 are formed in accordance with a normal semiconductor device manufacturing process. The interlayer insulating film 15 and the protective film 17 are general semiconductor device manufacturing processes such as BPSG (Boro-phospho silicate glass), NSG (None-doped Silicate Glass), PSG (phospho silicate glass), and TEOS (tetraethyl ortho silicate). The CVD (Chemical Vapor Deposition) oxide film used in (1) may be used. The protective film 17 may be a CVD nitride film or a laminated film of a CVD oxide film and a CVD nitride film.

(5) Openings 21 for defining the formation positions of the sensor part 1 and the beam part 3 are formed in the protective film 17 and the interlayer insulating film 15 by photolithography and etching techniques. The opening 21 is formed by, for example, an anisotropic dry etching technique. The bottom of the opening 21 reaches the silicon substrate 5.

(6) This will be described with reference to FIG. The portions of the silicon substrate 5 under the sensor part 1, under the beam part 3, and under the opening part 21 are removed from the back side of the silicon substrate 5 until reaching the infrared absorption film 9 by photolithography and etching techniques. Thereby, the cavity 7 is formed. For example, an anisotropic dry etching technique such as ICP (Inductively Coupled Plasma) etching is used as an etching technique. At this time, an etching gas having a large selection ratio between silicon and a silicon oxide film is used.

  As the cavity 7 is formed, the sub-wavelength structure 9 a is exposed to the cavity 7. Since the sub-wavelength structure 9a is formed of a silicon oxide film, the amount of etching is less than that of silicon, so that the uneven sub-wavelength structure 9a formed in advance appears on the surface of the infrared absorption film 9. .

  Thus, according to the manufacturing method of the present invention, it is possible to form a thermal infrared sensor having an infrared antireflection structure composed of the sub-wavelength structure 9a on the surface of the infrared absorption film 9 facing the silicon substrate 5.

  FIG. 8 is a schematic plan view and cross-sectional view for explaining another embodiment of the thermal infrared sensor. In FIG. 8, the cross-sectional view corresponds to the B-B ′ position in the plan view. In FIG. 8, in FIG. 8, parts having the same functions as those in FIG.

  In this embodiment, the cavity 7 is formed by crystal anisotropic wet etching on the silicon substrate 5. With respect to the silicon substrate 5 shown in FIG. 3 (5), the silicon substrate 5 is etched from the back side of the silicon substrate 5 by the photoengraving technique and the crystal anisotropic wet etching technique, so that the cavity 7 is formed. It is formed.

As the etching solution, for example, an alkaline solution such as a KOH (potassium hydroxide) aqueous solution or a TMAH (tetramethylammonium hydroxide) aqueous solution is used. The back surface of the silicon substrate 5 is a (100) plane. The side surface of the silicon substrate 5 exposed in the cavity 7 has an angle of about 55 ° with respect to the back surface of the silicon substrate 5.
Thus, the cavity 7 may be formed by crystal anisotropic wet etching.

  In the configuration of the embodiment shown in FIG. 1, FIG. 2 or FIG. 8, single crystal silicon cannot be used when the temperature sensor 11 is a diode or MOSFET. The embodiment shown in FIG. 1, FIG. 2 or FIG. 8 is an example in which a device such as a diode is formed on a polysilicon film as the temperature sensor 11. On the other hand, a device formed of single crystal silicon has advantages such as less leakage current and better uniformity than a device formed of polysilicon. Therefore, if the temperature sensor is formed of single crystal silicon, the S / N ratio (Signal-Noise ratio) of the infrared sensor and the stability and uniformity can be improved.

  FIG. 9 is a schematic cross-sectional view for explaining still another embodiment of the thermal infrared sensor. Parts having the same functions as those in FIG.

  In this embodiment, a support substrate 23 made of a silicon substrate, a BOX layer 25 made of a silicon oxide film, and an SOI substrate 27 having a single crystal silicon layer are used. The temperature sensor 29 is formed in a single crystal silicon layer of the SOI substrate. For example, the temperature sensor 29 is formed by a PN junction diode formed in a single crystal silicon layer of an SOI substrate. The single crystal silicon layer of the SOI substrate at a position different from the formation position of the temperature sensor 29 is oxidized by, for example, a LOCOS (Local Oxidation of Silicon) method for element isolation, and an element isolation oxide film 31 is formed.

  The BOX layer 25 at the position where the sensor unit 1 and the beam unit 3 are formed constitutes an infrared absorption film 9. A sub-wavelength structure 9 a is formed on the back surface (the surface on the support substrate 23 side) of the infrared absorption film 9. The cavity 7 is formed by a through hole formed in the support substrate 23.

  FIG. 10 is a process cross-sectional view for explaining another embodiment of the manufacturing method. The cross-sectional view of FIG. 10 corresponds to FIG.

(1) For subwavelength structure formation on the surface of the support substrate 23 at the position where the sensor portion 1 of the thermal infrared sensor is to be formed by taking into account the thermal oxidation treatment in the post-process (2) by photolithography and etching techniques. The concave pattern 9b is formed. In this embodiment, the concave pattern 9b is formed only at the position where the sensor unit 1 is to be formed. However, the concave pattern 9b is also formed at other positions such as the planned position where the beam 3 is formed and the planned position where the opening 21 is formed. 9b may be formed. Further, when a plurality of sensor units 1 are formed on the same substrate, the concave pattern 9b is formed on the support substrate 23 corresponding to the position where each sensor unit 1 is formed.

(2) A thermal oxidation treatment is performed to form a BOX layer 25 on the surface of the support substrate 23. At this time, the back surface of the support substrate 23 is also oxidized to form a silicon oxide film 35. At the interface between the BOX layer 25 and the support substrate 23, a sub-wavelength structure 9a is formed from the concave pattern 9b. In this embodiment, the sensor unit 1 and the BOX layer 25 of the beam unit 3 constitute an infrared absorption film 9. The surface of the BOX layer 25 is polished to remove the irregularities formed on the surface of the BOX layer 25 due to the concave pattern 9b. Thereby, the surface of the BOX layer 25 is planarized.

(3) A single crystal silicon layer 33 is pasted on the BOX layer 25. The single crystal silicon layer 33 is polished to polish the single crystal silicon layer 33 to a desired thickness. The silicon oxide film 35 on the back surface of the support substrate 23 is removed. Thereby, an SOI substrate 27 including the support substrate 23, the BOX layer 25, and the single crystal silicon layer 33 is formed.

(4) In order to define the formation position of the temperature sensor 29, the element isolation oxide film 31 is formed on the single crystal silicon layer 33 by, for example, the LOCOS method. The temperature sensor 29 is formed by performing an ion implantation process or an impurity diffusion process on the single crystal silicon layer 33 at a position where the sensor unit 1 is to be formed. Here, a temperature sensor 29 made of, for example, a PN junction diode is formed. Further, a step of forming a gate oxide film and a gate electrode may be added to form a temperature sensor made of a MOSFET. Thereafter, in order to take the potential of the temperature sensor 29, the interlayer insulating film 15, the contact hole, the wiring 13 and the protective film 17 are formed in accordance with a normal semiconductor device manufacturing process.

(5) Opening 21 is formed in the same manner as step (5) described with reference to FIG.
(6) This will be described with reference to FIG. Similar to the above step (6) described with reference to FIG. 3, the portions of the support substrate 23 under the sensor portion 1, under the beam portion 3, and under the opening portion 21 are removed by the anisotropic dry etching technique. It removes until it reaches the infrared absorption film 9 from the back side. Thereby, the cavity 7 is formed. The step of forming the cavity 7 by crystal anisotropic wet etching described with reference to FIG. 8 can also be applied to this embodiment.

  Thus, according to this embodiment, as shown in FIG. 9, the back surface of the infrared absorption film 9 has an infrared antireflection structure composed of the sub-wavelength structure 9a, and the temperature sensor 29 is formed in the single crystal silicon layer. A thermal infrared sensor can be formed.

  FIG. 11 is a schematic cross-sectional view for explaining still another embodiment of the thermal infrared sensor. The structures of the sensor unit 1 and the beam unit 3 in this embodiment are the same as those shown in FIG.

  In this embodiment, a CMOS (Complementary MOS) circuit section 37 is further provided on the silicon substrate 5. The CMOS circuit unit 37 includes a P-channel MOSFET 39 and an N-channel MOSFET 41. For example, when the silicon substrate 5 is a P-type silicon substrate, the P-channel MOSFET 39 is formed in the N-type well 43 formed in the silicon substrate 5, and the N-channel MOSFET 41 is formed in the silicon substrate 5 or the P-type well ( (Not shown). The formation positions of the MOSFETs 39 and 41 are demarcated by an element isolation silicon oxide film 19 made of, for example, a LOCOS oxide film.

  The P-channel MOSFET 39 has a gate formed on the N-type well 43 between the two P-type impurity diffusion layers 45 and 45 forming the source and the drain and formed between the P-type impurity diffusion layers 45 and 45. A polysilicon gate electrode 47 is provided through an oxide film (not shown).

  The N-channel MOSFET 41 includes two N-type impurity diffusion layers 49 and 49 constituting a source and a drain formed on the silicon substrate 5 and a gate oxide film on the silicon substrate 5 between the N-type impurity diffusion layers 49 and 49. A polysilicon gate electrode 51 formed through (not shown) is provided.

  A wiring 13 for taking the potentials of the impurity diffusion layers 45 and 49 and the gate electrodes 47 and 51 is formed. The protective film 17 formed on the interlayer insulating film 15 and the wiring 13 constitutes a second interlayer insulating film. A second-layer wiring 53 is formed on the protective film 17. The wiring 53 is connected to the wiring 13 connected to the MOSFETs 39 and 41 through a via hole formed in the protective film 17. No wiring 53 is formed in the sensor unit 1 and the beam unit 3.

  A final protective film 55 is formed on the protective film 17 and the wiring 53. The final protective film 55 is formed of a CVD nitride film or a laminated film of a CVD oxide film and a CVD nitride film. The final protective film 55 is not formed on the sensor unit 1 and the beam unit 3.

  When the silicon oxide film 19 for element isolation is formed by the LOCOS method in order to define the formation region of the MOSFETs 39 and 41, the infrared absorption film 9 and the sub-wavelength structure 9a of the sensor unit 1 and the beam unit 3 can be formed. . At this time, since the processing time and film thickness of LOCOS oxidation are determined by the manufacturing process of the CMOS circuit portion 37, it is difficult to make a significant change. Therefore, the size and pitch of the concavo-convex structure formed on the silicon substrate 5 must be taken into consideration so that the sub-wavelength structure 9a of the sensor unit 1 and the beam unit 3 can be formed without problems under the LOCOS oxidation conditions. In particular, when the unevenness of the surface of the infrared absorption film 9 (surface opposite to the surface on which the sub-wavelength structure 9a is formed) is large, problems occur when polysilicon is deposited for forming the temperature sensor 11 formed thereafter. there is a possibility. That is, it is preferable to reduce the size and pitch of the concavo-convex structure so that the surface of the infrared absorption film 9 becomes flat to some extent during the oxidation time of the LOCOS process.

  After the silicon oxide film 19 and the infrared absorption film 9 are formed by LOCOS oxidation, gate oxide films (not shown) of the MOSFETs 39 and 41 are formed, and polysilicon is further deposited. The polysilicon for forming the temperature sensor 11 of the sensor unit 1 and the polysilicon for forming the polysilicon gate electrodes 47 and 51 of the MOSFETs 39 and 41 can be formed in the same process. Thereafter, the polysilicon gate electrodes 47 and 51 are subjected to an ion implantation process and an impurity diffusion process. However, the temperature sensor 11 can also be formed using these processes.

  The sensor unit 1 preferably has a reduced heat capacity in order to improve the response speed. Therefore, in this embodiment, at the position where the sensor unit 1 is formed, the final protective film 55 is removed to make the film thinner than the CMOS circuit unit 37, thereby reducing the heat capacity. In the CMOS circuit part 37, the protective film 17 functioning as an interlayer insulating film functions as a protective film of the sensor part 1.

  As described above, the process of forming the base of the sub-wavelength structure by thermal oxidation can be combined with the LOCOS process of the CMOS process, so that it is not necessary to consider the influence on the CMOS process specially. The sub-wavelength structure 9a can be formed relatively easily by adding only the step of forming the concavo-convex shape (the concave pattern for forming the sub-wavelength structure).

  FIG. 12 is a schematic cross-sectional view for explaining still another embodiment of the thermal infrared sensor. The structures of the sensor unit 1 and the beam unit 3 in this embodiment are the same as those shown in FIG.

  In this embodiment, a CMOS circuit portion 37 is further provided on the SOI substrate 27. The CMOS circuit unit 37 includes a P-channel MOSFET 39 and an N-channel MOSFET 41. The P-channel MOSFET 39 is formed on the N-type single crystal silicon layer 57 formed on the single crystal silicon layer of the SOI substrate 27, and the N-channel MOSFET 41 is formed on the P-type single crystal silicon layer 59 formed on the single crystal silicon layer of the SOI substrate 27. Is formed. The formation positions of the MOSFETs 39 and 41 are demarcated by an element isolation silicon oxide film 31 made of, for example, a LOCOS oxide film formed in the single crystal silicon layer of the SOI substrate 27.

  The P-channel MOSFET 39 is formed in the N-type single crystal silicon layer 57 and includes two P-type impurity diffusion layers 45 and 45 constituting a source and a drain and an N-type single crystal between the P-type impurity diffusion layers 45 and 45. A polysilicon gate electrode 47 formed on the silicon layer 57 via a gate oxide film (not shown) is provided.

  The N-channel MOSFET 41 includes two N-type impurity diffusion layers 49 and 49 forming a source and a drain and a P-type single crystal between the N-type impurity diffusion layers 49 and 49 formed in the P-type single crystal silicon layer 59. A polysilicon gate electrode 51 is provided on the silicon layer 59 via a gate oxide film (not shown).

  The configurations of the wiring 13, the interlayer insulating film 15, the protective film 17, the second-layer wiring 53, and the final protective film 55 are the same as those shown in FIG. Even in this embodiment, the final protective film 55 is not formed on the sensor portion 1 and the beam portion 3.

  When the SOI substrate 27 is used as in this embodiment, since the sub-wavelength structure 9a is formed when the SOI substrate 27 is formed, there is no particular consideration when forming the CMOS circuit 37. As shown in FIG. 11, when the silicon substrate 5 is used, it is necessary to consider the LOCOS oxide film thickness, the shape of the sub-wavelength structure 9a of the infrared absorption film 9 of the sensor unit 1, and the like. There is no worry about this when using it. If the SOI substrate 27 is used, the sensor unit 1 and the CMOS circuit unit 37 can be made monolithic very easily.

  Further, the ion implantation process or impurity diffusion process when forming the temperature sensor 29 and the ion implantation process or impurity diffusion process when forming the sources and drains of the MOSFETs 39 and 41 and the polysilicon gate electrode may be shared.

  In the embodiment shown in FIG. 11 and the embodiment shown in FIG. 12, the cavity 7 is formed by anisotropic dry etching, but the cavity 7 is formed by crystal anisotropic wet etching. May be.

  FIG. 13 is a schematic plan view and cross-sectional view for explaining still another embodiment of the thermal infrared sensor. In FIG. 13, the cross-sectional view corresponds to the C-C ′ position in the plan view. In FIG. 13, parts having the same functions as those in FIG.

  The infrared sensor of this embodiment does not include the beam portion 3 and the opening 21 as compared with the infrared sensor shown in FIG. That is, it is formed without performing the step of forming the opening 21 from the surface side of the silicon substrate 5 (see (5) described above with reference to FIG. 3). Thereby, the sensor part 1 is a thin film (diaphragm) shape.

  FIG. 14 is a schematic cross-sectional view for explaining still another embodiment of the thermal infrared sensor. In FIG. 14, parts having the same functions as those in FIG.

  The infrared sensor of this embodiment does not include the beam portion 3 and the opening 21 as compared with the infrared sensor shown in FIG. That is, the step of forming the opening 21 from the surface side of the SOI substrate 27 (see (5) described with reference to FIG. 10) is not performed. Thereby, the sensor part 1 has a thin film shape.

As in the embodiment shown in FIG. 13 or FIG. 14, the sensor unit 1 may have a structure separated from the silicon substrate 5 or the support substrate 23 by being formed in a thin film shape.
Further, in the embodiment shown in FIG. 13 and the embodiment shown in FIG. 13, the cavity 7 is formed by anisotropic dry etching, but the cavity 7 is formed by crystal anisotropic wet etching. It may be.

  FIG. 15 is a schematic plan view and cross-sectional view for explaining still another embodiment of the thermal infrared sensor. In FIG. 15, the cross-sectional view corresponds to the D-D ′ position in the plan view. Parts having the same functions as those in FIG. 1 are denoted by the same reference numerals. In the plan view of FIG. 15, the interlayer insulating film 15 and the protective film 17 are not shown.

  This embodiment includes a thermopile as a temperature sensor. The thermopile utilizes the Seebeck effect in which an electromotive force is generated when a temperature difference is given to both ends of the material. In this embodiment, the thermopile constitutes an N-type polysilicon 11a into which an N-type impurity is introduced, a P-type polysilicon 11b into which a P-type impurity is introduced, metal wirings 13a and 13b constituting a cold junction, and a hot junction. Metal wiring 13c is provided.

  The polysilicons 11 a and 11 b are formed on the infrared absorption film 9 and the silicon oxide film 19 of the sensor unit 1 and the beam unit 3. The polysilicons 11 a and 11 b are arranged over the silicon oxide film 19 from the sensor unit 1 through the beam unit 3. The ends of the polysilicons 11 a and 11 b on the warm junction side are arranged in the sensor unit 1. The ends of the polysilicons 11 a and 11 b on the cold junction side are disposed on the silicon oxide film 19.

  In this embodiment, an infrared antireflection structure comprising a subwavelength structure 9 a is formed on the infrared absorption film 9 of the beam portion 3. However, the sub-wavelength structure 9 a may not be formed on the infrared absorption film 9 of the beam portion 3.

  The metal wirings 13a, 13b, 13c are formed on the interlayer insulating film 15. The metal wirings 13 a and 13 b are arranged above the silicon oxide film 19. The metal wiring 13 c is disposed in the sensor unit 1. The metal wiring 13a is electrically connected to the cold junction side end of the N-type polysilicon 11a above the silicon oxide film 19. The metal wiring 13 b is electrically connected to the cold junction side end of the P-type polysilicon 11 b above the silicon oxide film 19. On the sensor unit 1, the metal wiring 13c electrically connects the end of the N-type polysilicon 11a on the warm junction side and the end of the P-type polysilicon 11b on the warm junction side.

  Thus, the temperature sensor may be a thermopile. By using a thermopile in which different types of materials having positive and negative Seebeck coefficients are connected in series as the temperature sensor, higher sensitivity can be obtained.

  Further, a plurality of N-type polysilicons and a plurality of P-type polysilicons for forming a thermopile may be formed on the beam portion 3. In this case, each polysilicon is disposed over the infrared absorption film 9 from the sensor unit 1 through the beam unit 3. Further, N-type polysilicon and P-type polysilicon are alternately connected in series by metal wirings 13a, 13b, and 13c. This increases the sensitivity of the thermopile.

  FIG. 16 is a schematic plan view and cross-sectional view for explaining still another embodiment of the thermal infrared sensor. In FIG. 16, the cross-sectional view corresponds to the E-E ′ position in the plan view. Parts having the same functions as those in FIG. 13 or FIG. In the plan view of FIG. 16, the interlayer insulating film 15 and the protective film 17 are not shown.

In this embodiment, similarly to the embodiment shown in FIG. 13, a thermopile is applied as a temperature sensor to the sensor portion 1 having a diaphragm structure without a beam portion. A plurality of N-type polysilicons 11 a and a plurality of P-type polysilicons 11 b are arranged so as to straddle the cavity 7 and the silicon substrate 5. N-type polysilicon 11a and P-type polysilicon 11b are alternately arranged and connected in series by metal wiring 13c.
Since this embodiment is provided with a thermopile as a temperature sensor, higher sensitivity can be obtained.

The configuration provided with a thermopile as a temperature sensor can be applied to other embodiments.
In general, a combination of P-type polysilicon and N-type polysilicon or a combination of polysilicon and aluminum is used as the material of the thermopile. The thermopile as the temperature sensor of the thermal infrared sensor of the present invention is It is not limited to the combination of these materials.

As mentioned above, although the Example of this invention was described, this invention is not limited to these, A various change is possible within the range of this invention described in the claim.
For example, in the above embodiment, the shape of a single infrared sensor has been described. However, an infrared line sensor formed in a one-dimensional array, an infrared two-dimensional array sensor formed in a two-dimensional array, or an infrared image sensor. The present invention is also applicable.

  For example, as shown in FIG. 17, a plurality of sensor units 1 may be arranged on the semiconductor substrate 5.

  Moreover, although the said Example is equipped with a PN junction diode or a thermopile as a temperature sensor, the temperature sensor in the thermal type infrared sensor of this invention is not limited to these. The temperature sensor in the thermal infrared sensor of the present invention may be any sensor as long as it can detect a temperature change of the infrared absorption film, such as a MOSFET, a bolometer, a thermopile, or a pyroelectric material.

1 Sensor part 3 Beam part 5 Silicon substrate (semiconductor substrate)
7 Cavity 9 Infrared Absorption Film 9a Subwavelength Structure 9b Recess Pattern 11 for Subwavelength Structure Formation Temperature Sensor 13 Wiring 15 Interlayer Insulating Film 17 Protective Film 21 Opening 23 Support Substrate 25 BOX Layer 27 SOI Substrate 29 Temperature Sensor 33 SOI Substrate Single crystal silicon layer 37 CMOS circuit part

Japanese Patent Laid-Open No. 10-288550

Proceedings of the 26th Symposium on “Sensor Micromachine and Applied Systems”, pp. 622-626, 2009 Journal of Optical Society of America, A, Vol.12, no.2 pp.333-339, 1995

Claims (2)

In a method for manufacturing a thermal infrared sensor comprising an infrared absorption film separated from a semiconductor substrate by a cavity and a temperature sensor for detecting a temperature change of the infrared absorption film, the following steps (A) to (E) are performed: A manufacturing method of a thermal infrared sensor including in that order.
(A) a step of forming a concave pattern for forming a sub-wavelength structure on the surface of the semiconductor substrate at a position where a sensor part of a thermal infrared sensor is to be formed by photolithography and etching techniques;
(B) performing a thermal oxidation process to form the infrared absorption film made of a silicon oxide film having a sub-wavelength structure formed from the recess pattern on the surface of the semiconductor substrate;
(C) forming the temperature sensor on the infrared absorption film;
(D) forming an interlayer insulating film, a wiring, and a protective film in order to take the potential of the temperature sensor;
(E) By photolithography and etching techniques, the semiconductor substrate in the portion immediately below the infrared absorption film is removed from the back side of the semiconductor substrate until it reaches the infrared absorption film, and under the infrared absorption film Forming the cavity. The semiconductor substrate is a support substrate of an SOI substrate;
The thermal oxidation process in the step (B) is also a process of forming a BOX layer of the SOI substrate on the surface of the support substrate,
Between the step (B) and the step (C), the surface of the BOX layer is flattened by a polishing process, and a single crystal silicon layer is pasted on the BOX layer, so that a single crystal silicon layer of the SOI substrate is obtained. Including the step (B ′) of forming
The method for manufacturing a thermal infrared sensor according to claim 1 , wherein in the step (C), the temperature sensor is formed in the single crystal silicon layer formed in the step (B ′).

Images