CN205564714U - Rapid cleaning machine of wafer multistep - Google Patents
Rapid cleaning machine of wafer multistep Download PDFInfo
- Publication number
- CN205564714U CN205564714U CN201521052655.XU CN201521052655U CN205564714U CN 205564714 U CN205564714 U CN 205564714U CN 201521052655 U CN201521052655 U CN 201521052655U CN 205564714 U CN205564714 U CN 205564714U
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning machine
- cleaning
- buffer
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model provides a wafer's the rapid cleaning machine of multistep carries out abluent device as the wafer to accomplishing chemical mechanical polishing technology in proper order, a serial communication port, include: first cleaning machine, its wafer to accomplishing chemical mechanical polishing technology washs, the second cleaning machine, its to wafer's surface provides organic solvent to get rid of organic foreign matter of wafer surface adhesion, transfer the unit, its removal wafer.
Description
This divisional application is based on Application No. 201520652693.2, filing date on August 26th, 2015, the divisional application of the Chinese patent application of invention entitled " wafer processing means and the wafer multi-step cleaning machine for it ".
Technical field
The utility model relates to a kind of wafer (wafer) processing means and the wafer multi-step cleaning machine for it, relate to a kind of wafer processing means (wafer treating apparatus) in more detail, described wafer processing means can effectively carry out cmp (chemical mechanical polishing) technique in less space and clean (cleaning) technique, it is not delayed and after technique has removed chemical mechanical process rapidly and positively, residues in the foreign organic matter of wafer and inorganic foreign matter, make next technique be carried out.
Background technology
Cmp (CMP, Chemical mechanical polishing) device is the device for processing the precise finiss of wafer surface, the purpose of described precise finiss processing is: global planarizartion, and it removes difference in height between concavo-convex unit (cell) region and the periphery loop region caused that the wafer surface produced when sheltering (masking), the etching technique such as (etching) and distribution is repeated in the manufacture process of semiconductor element；And separate and the wafer surface smoothness raising etc. of highly integrated element according to the contact (contact) for forming loop/wiring film.
Chemical mechanical milling tech is to make the evaporation faces such as the copper of wafer, oxide skin(coating) reach certain thickness flatening process.Because having polishing particles or lapping liquid (slurry) etc. to be attached to abradant surface, so the cleaning of abradant surface is extremely important.Still more, in chemical mechanical milling tech, the foreign matter being attached to wafer is not limited to inorganic (inorganic) composition, also comprises organic (organic) composition.Therefore, the wafer after processing chemical mechanical milling tech is carried out technique successively.
Related to this, disclosed existing chemical mechanical polishing device has, as disclosed in Korean Utility Model registration publication the 10-0412478th, disclose following composition: carry out chemical mechanical milling tech when moving wafer on multiple abrasive disks singly, or moved with the form of carrousel (Carousel) and carry out chemical grinding technique by wafer disposably one lattice of lattice.
But, through chemical mechanical milling tech on multiple abrasive disks while moving wafer with the form of carrousel, cmp module X1 is generally formed into square form, thus not only need the biggest site space, and, there is cleaning module X2 and the difference in size of cmp module X1 that the wafer completing chemical mechanical milling tech is carried out, so that bigger space disposes the layout between them to produce space waste.Additionally, in order to the wafer completing chemical mechanical milling tech in cmp module X1 is sent to cleaning module X2, the conveying direction etc. that there is a need to change wafer carries the problem controlling complexity.
It addition, the focus of the cleaning after chemical mechanical milling tech process concentrates on the inorganic foreign matter of removal, therefore, remove the necessity of the foreign organic matter of residual in wafer and highlight.
It addition, as it is shown in figure 1, for the foreign matter removing the wafer W surface attachment completing chemical mechanical milling tech on multiple abrasive disk P, pass sequentially through and be disposed with the region X2 of substrate cleaning machine 9 and be cleaned by.Now, while by transfer arm (arm) H1 transfer wafer W, completing CMP on multiple abrasive disk P, abrasive disk P is arranged along radius of turn Ro of transfer arm H1.
Substrate cleaning machine 9 supplies wafer W by linking arm Hc to each cleaning module X2, supply wafer W by transfer arm (transferrobot) H2, H3 to cleaning machine C1, C2, C3 of cleaning module X2, clean with multi-step and remove the foreign matter being attached to wafer W in a cmp process.
Such as, first cleaning machine C1, C2 of substrate cleaning machine 9 is constituted it may be that apply for the applicant and obtain registering in Korean Utility Model of mandate being constituted, disclosed in publication the 10-131853rd, the composition being carried out wafer；Second cleaning machine C3 is constituted it may be that apply for the applicant and obtain registering in Korean Utility Model of mandate being constituted, disclosed in publication the 10-131851st, the composition being carried out wafer；3rd cleaning machine C4 may be configured as rinsing drying processing machine, and the wafer after cleaning is rinsed and is dried by it.
For the substrate cleaning machine 9 so constituted, as in figure 2 it is shown, wafer W completing CMP is sent to the first cleaning machine (a first cleaning device) C1, C2 carries out the first cleaning S1, waits and enter the second cleaning machine C3S2.Then, along with the wafer carrying out the second cleaning in the second cleaning machine C3 is sent to next technique, thus when the second cleaning machine C3 is vacated, the wafer in first cleaning machine C1, C2 wait is sent to the second cleaning machine C3 and carries out the second cleaning S3.Afterwards, equally, wafer W completing the second cleaning at the second cleaning machine C3 is sent to the 3rd cleaning machine C4 in the second cleaning machine C3 wait and carries out next 3rd cleaning S4.Then, when the 3rd cleaning machine C4 is vacated, the wafer waited at the second cleaning machine C3 is sent to the 3rd cleaning machine C4, carries out the 3rd cleaning S5.
But, each cleaning machine C1, C2, C3 be carried out technique required for time different.Such as, first cleaning machine C1, C2 needs the scavenging period of 30 seconds, second cleaning machine C2 needs the scavenging period of 45 seconds, so, the wafer completing the first cleaning at the first cleaning machine C1 needs to wait 15 seconds, waits the wafer cleaned in the second cleaning machine C3 to enter back into the second cleaning machine C3 after completing the second cleaning.
Therefore, wafer in the cleaning of each cleaning machine C1, C2, C3, can only need in cleaning machine C1, C2, C3 the longest scavenging period cleaning machine scavenging period on the basis of carry out, thus resulted in the waste that scavenging period is unnecessary.
Technology shown in Fig. 1 and Fig. 2 in contrast to problem to be solved in the utility model, is not meant to disclosed prior art.
Utility model content
The utility model proposes based on described technical background, its object is to: what scene took up room minimizes；Chemically mechanical lapping module need not conversion direction during being sent to cleaning module, carries out transfer simple, accurate, rapid and controls.
It addition, the purpose of this utility model is: removed by a technique and remain in the inorganic foreign matter in wafer and foreign organic matter in attachment during chemical mechanical process, improve the cleaning state of wafer.
It is essential that the purpose of this utility model is: provide the wafer processing means that a kind of flexibility producing process improves, its cmp module utilizing fixed arrangement and cleaning module, it is possible to carry out the process technique of variform.
Additionally, the purpose of this utility model is: with the organic solvent of non-contacting spray regime supply high-temperature heating, thus remove the foreign organic matter in wafer surface residual more up hill and dale.
Additionally, the purpose of this utility model is: is arranged on after the second cleaning machine completes to remove the cleaning of foreign organic matter and places the buffer of wafer, thus realizes shortening the stand-by period of the multi-step cleaning removing foreign matter, thus, the shortening time, improve the efficiency of cleaning.
In addition, the purpose of this utility model is: the wafer after the second cleaning machine being completed HIGH TEMPERATURE PURGE technique by buffer carries out cooling technique, the second cleaning machine is enable to be carried out continuously the cleaning of wafer, thus, the quantity of the wafer cleaned in increasing the unit interval.
In order to reach described purpose, the utility model provides a kind of wafer processing means, described wafer processing means is as the wafer processing means carrying out chemical mechanical milling tech and cleaning, including cmp module and cleaning module, described cmp module includes: the first abrasive disk group (a first polishing table group), and it is the first row of arrangement two or more abrasive disk；Second abrasive disk group (a second polishing table group), it arranges the secondary series (a second row) of two or more abrasive disk for isolating with described first row (a first row), in described first abrasive disk group and described second abrasive disk group, respectively wafer is carried out chemical mechanical milling tech, described cleaning module includes that a first cleaning group of planes and second cleans a group of planes, a described first cleaning group of planes is the 3rd row arranging plural cleaning machine in the side of described cmp module, a described second cleaning group of planes is the 4th row arranging plural cleaning machine in the side of described cmp module.
This be in order to: make cmp module include two row abrasive disk groups, clean group of planes with two row in this neighbouring region and form cleaning module, thus the change process technique to wafer flexibly can be cleaned while optionally (selectively) is mobile in group of planes according to the process technique of wafer two row abrasive disk groups and two row.
Such as, complete the wafer of chemical mechanical milling tech described first abrasive disk group, can clean in a group of planes described first and be carried out technique；Complete the wafer of chemical mechanical milling tech described second abrasive disk group, can clean in a group of planes described second and be carried out technique.In addition, the wafer of chemical mechanical milling tech is completed described first abrasive disk group, can clean in a group of planes described second and be carried out technique, complete the wafer of chemical mechanical milling tech described second abrasive disk group, it is also possible to clean in a group of planes described first and be carried out technique.
Additionally, one wafer only can carry out chemical mechanical milling tech in some in described first abrasive disk group and described second abrasive disk group, and a wafer carries out chemical mechanical milling tech while also being able to circulate described first abrasive disk group and described second abrasive disk group.
So, when being carried out technique after the cmp process such as the wafer processing means of described arrangement, it is able to ensure that wafer is processed technique introduces the flexibility (flexibility) of kinds of processes variable, therefore, achieve and utilize a device can carry out multiple process technique, thus obtain reduce on-the-spot taking up room while improve the advantageous effects of production efficiency.
Here, some in described first row, described secondary series can be arranged as straight line above, some in described first row, described secondary series is above also can be arranged as curve.
It addition, because described first row arranged side by side, described secondary series compare save space, so being preferred.Additionally, in order to the transfer technique making wafer is more uniform, can be by described first row, described secondary series symmetric arrays.
It addition, a described first cleaning group of planes and described second cleans a group of planes respectively different wafers can be independently carried out technique.
Here, also include: the first transfer unit, it cleans a group of planes along described first and moves wafer；Second transfer unit, it cleans a group of planes along described second and moves wafer.
Then, described first row and described 3rd row arrange in the same direction, described secondary series and described 4th row arrange in the same direction, make that scene takies is space-minimized, chemically mechanical lapping module need not conversion direction during moving to cleaning module, it is achieved that transfers control simply, accurately, rapidly.
It addition, described first row and described tertial orientation can also be different.Such as, first row arranges in a vertical direction, and the 3rd row are arranged by horizontal direction.Or, first row presses curved path arrangement, and the 3rd row are arranged by rectilinear direction.Equally, the orientation of secondary series and the 4th row can also be different.
It addition, a described first cleaning group of planes and described second cleans a group of planes respectively different wafers can be independently carried out technique.
So, by the first abrasive disk group and the second abrasive disk group line up two row the most arranged side by side, cmp module is made to be arranged on rectangular frame, it is achieved what scene took up room minimizes such that it is able to arrange more abrasive disk.Meanwhile, the abrasive disk group of each row protrudes the outside of frame, it is easy to the maintenance of each row abrasive disk and maintenance.
In the region that described cmp module and described cleaning module are adjacent, including: the first tipper (a first turner), wafer before described first row is sent to a described tertial described first cleaning group of planes, is turned over turnback in wafer by it；Second tipper, wafer, before wafer is sent to a described second cleaning group of planes for described 4th row from described secondary series, is turned over turnback by it.
Now, described first row and described secondary series are arranged in a straight line, put more abrasive disk in less site space.
The utility model additionally provides the multi-step cleaning machine of a kind of wafer, as the device that the wafer completing chemical mechanical milling tech is carried out successively, including:
First cleaning machine, the wafer completing chemical mechanical milling tech is carried out by it；
Second cleaning machine, it provides organic solvent to the surface of described wafer, to remove the foreign organic matter of wafer surface attachment；
Transfer unit, it moves described wafer.
Further, described second cleaning machine provides the organic solvent being heated to more than 50 DEG C to the surface of described wafer, to remove the foreign organic matter of wafer surface attachment.
Further, described second cleaning machine sprays organic solvent in a non contact fashion to the surface of described wafer.
Further, described second cleaning machine, when making described wafer rotate, makes the movement of the nozzle of the described organic solvent of injection spray while having the radial direction composition of wafer.
Further, the described organic solvent of described second cleaning machine injection comprises sulfuric acid, sprays organic solvent in a non contact fashion to the surface of described wafer.
Further, described first cleaning machine is to the carbon dioxide of the abradant surface surface of the wafer injection state of cooling.
Further, described first cleaning machine dissolves more than some in the inorganic solvent of inorganic matter and the organic solvent of dissolved organic matter to the offer of described wafer, removes the foreign matter remained at described wafer surface.
Further, buffer, it, before the described wafer that described second cleaning machine cleans is sent to carry out the processor of next technique, is used for placing described wafer,
Thus the described wafer heated by high temperature organic solvent at described second cleaning machine, cooled down at described buffer.
Further, described processor is irradiation modules, and it is dried described wafer.
Further, described wafer has been the wafer of chemical mechanical milling tech, and described buffer is provided with the space placing two or more wafer.
Further, described wafer has been the wafer of chemical mechanical milling tech, and described buffer is provided with the space placing two or more wafer up and down, and described buffer can move up and down.
Further, described wafer has been the wafer of chemical mechanical milling tech, and described wafer is placed on described buffer from described second cleaning machine at certain altitude by described transfer unit.
Further, described wafer has been the wafer of chemical mechanical milling tech, and described buffer is arranged to reciprocate, so that described buffer is after described second cleaning machine accepts described wafer, it is possible to provide described wafer to next described processor.
Further, described wafer has been the wafer of chemical mechanical milling tech, and described buffer provides liquid to keep the moisture state of the wafer in placing.
It addition, the utility model provides the multi-step cleaning machine of wafer, it is characterised by including as the device being carried out the wafer after chemical mechanical milling tech successively: the first cleaning machine, and it cleans the wafer after chemical mechanical milling tech；Second cleaning machine, it provides organic solvent (organic solvent) to described wafer surface, removes the foreign organic matter of attachment on wafer surface；Transfer unit (transfer unit), it moves described wafer.
This be in order to: not only include removing the first cleaning machine of inorganic foreign matter remaining in wafer surface after chemical mechanical milling tech terminates, also include the second cleaning machine removing the foreign organic matter of wafer surface residual, thereby, it is possible to be fully completed the removal of inorganic foreign matter and foreign organic matter in a processing unit.
Now, in order to make the wafer after the first cleaning machine carries out the first cleaning, the second cleaning machine carries out the second cleaning, the first cleaning machine and the second cleaning machine can be arranged in order.But, according to another embodiment of the present utility model, it is also possible to be after the second cleaning machine carries out the second cleaning, carry out the first cleaning at the first cleaning machine, can also be after the first cleaning machine carries out the first cleaning, carry out the second cleaning at the second cleaning machine.
Now, described second cleaning machine provides the organic solvent being heated to more than 50 DEG C to the surface of described wafer, removes the foreign organic matter being attached to wafer surface, thus improves the efficiency removing the foreign organic matter in wafer surface residual.
Then, described second cleaning machine sprays organic solvent to described wafer surface in a non contact fashion, is effectively shortened the time providing organic solvent to the foreign organic matter at the whole remained on surface of wafer, thus shortens the scavenging period removing foreign organic matter.To this end, described second cleaning machine is when described wafer rotates, the movement of the nozzle of the described organic solvent of injection is made to spray while having the radial direction composition of wafer, to complete to clean.
Now, the described organic solvent of described second cleaning machine injection comprises sulfuric acid such that it is able to more efficiently and effectively remove the foreign organic matter of wafer surface residual.
It addition, described first cleaning machine provides to described wafer, dissolve more than one in the inorganic solvent of inorganic matter and the organic solvent of dissolved organic matter, the foreign matter remained with removal at described wafer surface.
It is important that, the utility model includes buffer, described buffer is sent to before next processor (being included in cleaning machine) carries out next technique at described second cleaning machine through the described wafer of over cleaning, for placing described wafer, so that the described wafer heated by high temperature organic solvent at described second cleaning machine is cooled down at described buffer.
Thus, in the second heated wafer of cleaning machine without taking the space in the second cleaning cabin, also save and cool down the time required for heated wafer at next processor, it is achieved that the second cleaning machine and processor carry out continuous print cleaning respectively and process technique wafer, the stand-by period making multi-step cleaning minimizes, and shortens scavenging period and is effectively shortened the time of cleaning.
Now, described processor could be for rinsing, being dried the drying machine of described wafer, it is also possible to is the detection machine of detection wafer.
Then, described buffer is preferably provided with placing the space of two or more wafer.Thus, within the shorter time, the plural wafer completing the second cleaning through the second cleaning machine waits on buffer, so that the second cleaning machine can carry out continuous print the second cleaning.Here, described buffer is preferably provided with placing up and down the space of two or more wafer, so that it takes up room less.
Then, described buffer can move up and down, even if transfer unit with certain altitude close to the first buffer, it is also possible to make multiple wafer without being repeatedly individually positioned in each layer of the first buffer, it is possible to this wafer to be removed.
Then, described buffer receives described wafer from described second cleaning machine, in order to the described wafer after shortening the second cleaning machine cleaning is sent to carry out transfer path during the next processor processing technique, may be configured as carrying out back and forth movement.Thus, when wafer placed by buffer, the first buffer is made to be moved close to the position of the second cleaning machine, when buffer transfers wafer to processing unit, buffer is moved close to the position of processing unit, so that the mobile route of the transfer unit of transfer wafer minimizes, improves process efficiency.
Then, described buffer preferably supplies the liquid such as pure water, makes the wafer in placement keep the state moistened.Thus, the period wafer to be cleaned such as prevent because of dry and impaired.
As mentioned above, because the time needed for the second cleaning machine carries out the second cleaning is shorter than the time that processing module is carried out needed for processing technique, during so placing wafer on buffer, according to the time scale needed for the time needed for the second cleaning and process technique, adjust the quantity of the second cleaning machine and processing module.
Similar, carry out between the first cleaning machine of the first cleaning and the second cleaning machine carrying out the second cleaning, buffer can also be set separately, wait at buffer, so that each cleaning module can be carried out technique to wafer continuously during the process time difference of the first cleaning and the second cleaning.It is carried out required time scale according to the first cleaning machine and the second cleaning machine, adjusts its number.
Such as, when first scavenging period is about 30 seconds, the second scavenging period is about 45 seconds, the configuration quantitative proportion of the first cleaning machine and the second cleaning machine is 2:3 (two and three), so that the minimal time that wafer is not carried out technique at the first cleaning machine and the second cleaning machine and waits.In other words, when the process of described first cleaning machine and described second cleaning machine has the time difference, the quantity of the cleaning module processing time length is short more than the process time.
Then, some in described first cleaning machine, described second cleaning machine, described processing module is above includes rinsing more than some in technique and drying process.In other words, " cleaning machine ", " processor " and similar term that this specification and utility model registration right are recorded are not limited to the cleaning of wafer, including all wafer being rinsed, or machine dry after cleaning and rinsing.Such as, " the first cleaning machine " and " processor " can also be made up of the machine rinsed wafer or be dried.
According to the utility model, the first abrasive disk group being arranged in frame and the second abrasive disk group line up two respectively the most parallel row, so that cmp module is arranged on rectangular frame, make that scene takies is space-minimized, it is possible to arrange more abrasive disk.Meanwhile, the abrasive disk group of each row protrudes the outside of frame, is conducive to maintaining the abrasive disk of each row.
In other words, according to the utility model, first abrasive disk group and the second abrasive disk group alinement arranged side by side respectively, the wafer transferred from the first abrasive disk group and the second abrasive disk group is without conversion direction, directly enter a first cleaning group of planes and second the most arranged in a straight line by the first transfer unit arranged in a straight line and the second transfer unit and clean a group of planes, complete CMP and cleaning, thus, minimize taking up room of processing means at the scene, need not change the direction of wafer during carrying out chemical mechanical milling tech and cleaning, thus reach the simple of transfer control, accurately, purpose rapidly.
During it is essential that the utility model carries out cleaning after CMP processes, it can be ensured that wafer is processed technique and introduces the flexibility of kinds of processes variable, therefore, a device can be utilized to carry out multiple process technique, while making on-the-spot taking up room minimize, improve production efficiency.
Additionally, the utility model provides the multi-step cleaning machine of a kind of wafer, the device being carried out successively as the wafer after processing cmp, comprising: the first cleaning machine, the wafer after chemical mechanical milling tech is carried out by it；Second cleaning machine, it provides organic solvent to remove the foreign organic matter of wafer surface attachment to described wafer surface；Transfer unit, it moves described wafer；Buffer, it after the second cleaning machine cleans, before being sent to carry out the handling machine of next technique, places described wafer in described wafer.Thus include removing beyond the first cleaning machine of the inorganic foreign matter residuing in wafer surface after chemical mechanical milling tech terminates, also include the second cleaning machine removing the foreign organic matter residuing in wafer surface, thus, it is not only able to be fully completed the removal of inorganic foreign matter and foreign organic matter in one processes technique, and cleaning module withouts waiting for the cooling of heated wafer, achieve the supply continuously of wafer and wafer is carried out technique, therefore, not only increase cleaning state, also shorten and clean the process time that a wafer needs.
In other words, in addition to including removing and residuing in the cleaning module of inorganic foreign matter of wafer surface after chemical mechanical milling tech terminates, also include the second cleaning machine removing the foreign organic matter residuing in wafer surface, therefore, in one processes technique, it is fully completed the removal of inorganic foreign matter and foreign organic matter, improves the cleaning state of wafer.
Additionally, the utility model has following advantageous effects: supplied the organic solvent of high-temperature heating by noncontact jetting mode, be conducive to removing more neatly the foreign organic matter of wafer surface residual.
The more important thing is, the purpose of this utility model is: by cooling technique required after completing the HIGH TEMPERATURE PURGE technique to the second cleaning machine in buffer, enable the second cleaning machine continuous wash wafer, improves the wafer in the unit interval and cleans quantity.
Then, the utility model has following advantageous effects: arrange the space that can place two or more wafer up and down on the buffer that can move up and down, the transfer unit making mobile wafer need not move up and down and has only to move horizontally, in production scene, take less space, it is not necessary to repeat just to place plural wafer.
In addition, the utility model makes buffer (include conveniently to the position of cleaning module supply wafer) back and forth movement between cleaning module and processor, when wafer placed by buffer, the position close to some cleaning module shifted to by buffer, when wafer on buffer is supplied to another cleaning module or processor, the position close to another cleaning module or processor shifted to by buffer, thus minimize the mobile route of the transfer unit of transfer wafer, improve process efficiency further.
Thus, the utility model has a following advantageous effects: arranges the second cleaning machine and completes to remove after the cleaning of foreign organic matter for placing the buffer of wafer, so that the stand-by period removing the multi-step cleaning of foreign matter minimizes, each cleaning module is enable to be carried out continuously wafer cleaning, shorten scavenging period, improve cleaning efficiency.
Accompanying drawing explanation
Fig. 1 is the plane of the composition illustrating the substrate board treatment carrying out CMP and cleaning being contrasted with the utility model.
Fig. 2 is the precedence diagram of the cleaning method illustrating the cleaning machine utilizing Fig. 1 successively.
Fig. 3 is the plane of the multi-step cleaning machine of the wafer after CMP according to an embodiment of the present utility model.
Fig. 4 is the stereogram of buffering (buffer) machine of Fig. 3.
Fig. 5 is the precedence diagram of the cleaning method illustrating the cleaning machine utilizing Fig. 3 successively.
Fig. 6 a to Fig. 6 e is the plane of the composition illustrating the cleaning step according to the cleaning machine utilizing Fig. 3.
Fig. 7 is the plane being shown in the second cleaning machine of the present utility model the composition to the wafer surface injection organic solvent rotated.
The side view of the tipper that Fig. 8 a and Fig. 8 b is disposed between CMP module and cleaning module and plane.
Fig. 9 to Figure 11 is the plane of the wafer processing means being configured with CMP module and cleaning module according to another embodiment of the present utility model.
Detailed description of the invention
Below with reference to accompanying drawing, the utility model is described in detail.During the utility model is described, in order to make main idea of the present utility model clear, omit and known function or composition are specifically described.
As it can be seen, include according to the substrate board treatment 100 of an embodiment of the present utility model: cmp module X1, it carries out the multi-step CMP of wafer W；Cleaning module X2, it carries out multi-step cleaning.
Described cmp module X1 includes the first abrasive disk group PG1 and the second abrasive disk group PG2, described first abrasive disk group PG1 makes multiple abrasive disk P be arranged in a straight line the first row of form, described second abrasive disk group PG2 so that multiple abrasive disk P are arranged in a straight line the secondary series of form.As shown in Figure 3, first abrasive disk group PG1 of first row and second abrasive disk group's PG2 arranged in parallel of secondary series, under the state that wafer carrier (carrier) Cr clamps wafer W, while moving on the abrasive disk P of arrangement in each abrasive disk group PG1, PG2, substep carries out chemical mechanical milling tech.
The wafer carrier Cr R mode that moves in path along regulation and the detailed composition of wafer carrier Cr, be disclosed in the applicant obtain through application mandate Korea patent registration publication the 10-118854th, and include the part into this specification in.
So, first abrasive disk group PG1 and the second abrasive disk group PG2 lines up two row the most arranged side by side, first cleans group of planes CG1 and second cleaning group of planes CG2 lines up two row the most arranged side by side, thus, cmp module is made to be disposed on rectangular frame (frame), therefore taking up room of scene minimizes such that it is able to arrange more abrasive disk P.In addition, first abrasive disk group PG1 and the second abrasive disk group PG2 lines up mutually symmetrical with two row, first clean group of planes CG1 and second clean group of planes CG2 lines up mutually symmetrical with two row so that along described group PG1, PG2, CG1, CG2 move control wafer composition become simplified as and become to be easily controlled.
Additionally, abrasive disk group PG1, PG2 of each row do not protrude in the inboard of frame in outside, therefore, facilitate operating personnel that the abrasive disk P of abrasive disk group PG1, PG2 is carried out maintaining respectively.
It addition, wafer carrier Cr moves on multiple abrasive disk P along the path R of regulation on one side, each abrasive disk P carries out CMP.Now, CMP can be carried out under the same conditions, it is also possible to carries out under conditions of different types of lapping liquid or different grinding rate.
It addition, by the wafer of wafer carrier Cr carrying only on the abrasive disk P of arrangement, can mutually be distinguished and carry out CMP process on the first abrasive disk group PG1 or the second abrasive disk group PG2.Thereby, it is possible to make the CMP taking in cmp module X1 in less space more uniform, be conducive to improving production efficiency.But, according to different situations, although illustrate the most in the drawings, CMP can be carried out all through the first abrasive disk group PG1 and the second abrasive disk group PG2 on the abrasive disk P more than by the wafer of wafer carrier Cr carrying.Thus, available a kind of abrasive disk P layout, carry out the CMP of variform.
Similar, its composition can be: at the first abrasive disk group PG1 through the wafer of CMP, clean group of planes CG1 first and be carried out technique, and the wafer experiencing CMP at the second abrasive disk group PG2 is cleaned group of planes CG2 second be carried out technique.Simultaneously, as shown in Figure 10, its composition can be: by the first abrasive disk group PG1 through the wafer of CMP, intersection moves to the second cleaning group of planes CG2 and is carried out technique, and by the second abrasive disk group PG2 through the wafer of CMP, intersect and move to the first cleaning group of planes CG1 and be carried out technique.Thus, by arranging two row abrasive disk group PG1, PG2 and arranging two row cleaning a group of planes CG1, CG2, when being carried out technique after the cmp process, guarantee that wafer W is processed technique and introduce the flexibility of kinds of processes parameter, therefore, set of device can be utilized to carry out multiple process technique, thus not only save the space that scene takies, also be effectively improved production efficiency.
Now, the first cleaning group of planes CG1 and second cleans group of planes CG2 and independently different wafer substeps can be carried out process.
As shown in Figure 3, wafer W in cmp module X1 after the first abrasive disk group PG1 arranged in a straight line and the second abrasive disk group PG2, need not conversion direction and enter cleaning module X2, by fixture (gripper) Gr1, Gr2, Gr3, Gr4, during under the state that Go clips, the most linearly path Rx is moved linearly by transfer unit, clean group of planes CG2 through the first cleaning group of planes CG1 and second arranged in a straight line to be cleaned by, thus chemically mechanical lapping module X1 need not conversion direction during moving to cleaning module X2, therefore control to become simple, accurately, and it is rapid.
Additionally, row of the composition that Fig. 3 passes the imperial examinations at the provincial level are, first abrasive disk group PG1 and the second abrasive disk group PG2 is respectively formed the row of rectilinear configuration, is the form (including intermittent interruption) that the first cleaning group of planes CG1, the second cleaning group of planes CG2 arranged in a straight line are connected with abrasive disk group PG1, PG2 simultaneously.It may also be, as shown in Figure 9, first abrasive disk group PG1 and the row of second abrasive disk group's PG2 forming curves form, the form (including intermittent interruption) that the first cleaning group of planes CG1, the second cleaning group of planes CG2 arranged in a straight line is connected with abrasive disk group PG1, PG2.Otherwise, although not illustrating on figure, the first abrasive disk group PG1 and the second abrasive disk group PG2 is arranged in a straight line, the form (including intermittent interruption) that the first cleaning group of planes CG1 of curved arrangement, the second cleaning group of planes CG2 are connected with abrasive disk group PG1, PG2.Or the row that the row of abrasive disk group PG1, PG2 formation and cleaning a group of planes CG1, CG2 are formed, do not use the type of attachment shown in Figure 11, and use the composition needing additionally movement.
Additionally, row lifted in figure 3 are, the row that the first abrasive disk group PG1 and the second abrasive disk group PG2 is formed, along the composition of the horizontal direction arrangement parallel with the row that the first cleaning group of planes CG1 and the second cleaning group of planes CG2 is formed.It may also be, as shown in figure 11, the row that the first abrasive disk group PG1 and the second abrasive disk group PG2 is formed arrange to the row cleaning group of planes CG2 formation with the first cleaning group of planes CG1 and second direction that is vertical or that tilt.
It addition, during wafer carrier Cr moves along the path R specified, multiple abrasive disk P carry out multi-step CMP, then become the abradant surface state towards bottom surface of wafer W.But, different towards being arranged to towards with the abradant surface of the wafer in the cleaning of cleaning module X2 of the abradant surface of the wafer after cmp module X1 is completed CMP, be conducive to being smoothed out of each technique, thus be preferred.
To this end, arrange in region between cmp module X1 and cleaning module X2: the first tipper 80, from the first abrasive disk group PG1 of first row wafer W delivered to tertial first clean group of planes CG1 before, wafer W is turned over turnback by it；Second tipper 80, before wafer W is delivered to the second cleaning group of planes CG2 of the 4th row by the second abrasive disk group PG2 of secondary series, wafer W is turned over turnback by it.
Described wafer tipper 80 is arranged at the region that cmp module X1 and cleaning module X2 are adjacent, including: the first tipper 80, before wafer is delivered to tertial first cleaning group of planes CG1 by the first abrasive disk group PG1 of first row, wafer W is turned over turnback by it；Second tipper 80, before wafer W is delivered to the second cleaning group of planes CG2 of the 4th row by the second abrasive disk group PG2 of secondary series, wafer W is turned over turnback by it.
Thus, wafer W of multi-step CMP is completed from lapping device group PG1, PG2, moved linearly by carrier Cr and deliver to wafer tipper 80, the fixture 81 being clamped wafer W by the EDGE CONTACT with wafer W picks up wafer W, fixture 81 is reversed 180 degree, then move to cleaning unit X2, make the abradant surface of wafer W upward.According to circumstances it may be that wait under the state clipped by fixture 811 and be transplanted on cleaning module X2；Can also be that mounting table 83 moves along pillar 82 vertically 81d, receives wafer W from fixture 811, make wafer W wait on mounting table 83.
To this end, wafer tipper 80 includes: fixture operation device M, it does not move up and down the position of fixture 81, and makes clamp member 811 move horizontally in original place and pick up or put down wafer W, and makes clamp member 811 turn over turnback in original place；Liquid supply unit 815, it is arranged at clamp member 811, is used for spraying or flowing out the liquid such as pure water.
Here, as shown in Fig. 8 a and Fig. 8 b, fixture 81 includes: a pair clamp member 811；Starting unit 813, it extends to a side from the one end of clamp member 811；Shell (casing) 118, a part for its storage starting unit 813.Fixture 81 may be configured as rotating shell 118 pick up wafer W with the form of hinge (hinge), and according to preferred embodiment of the present utility model, in order to the most definitely maintain wafer W pick up position while maintain the state more firmly clamped, the relative shell 118 of clamp member 811 carry out back and forth movement along the direction being expressed as 811d and pick up wafer W.
Then, fixture operation device M plays following effect: make starting unit 813 relative to shell 118 on the basis of Fig. 8 b vertically (direction being inserted in from shell or extracting) move, so that clamp member 811 along close to each other or away from direction 811d move, make clamp member 811 can pick up wafer W or put down wafer W picked up.
In order to make starting unit 813 move in opposite direction in shell 118, it is internally formed pressure chamber (chamber) at shell 118, by controlling the pressure within pressure chamber, makes starting unit 813 can be inserted into according to pneumatics or hydraulic pressure or extract.According to another form of the present utility model, there is the threaded bar (not shown) of rightabout screw thread inside shell 818, be arranged to the screw thread with starting unit 813 coincide, make threaded bar rotate by fixture operation device M, make starting unit 813 move to mutual rightabout.So, by multiple composition, by the back and forth movement of starting unit 813, it is possible to make clamp member 811 move to mutual rightabout.So, by the back and forth movement of the rectilinear configuration of starting unit 813, the state utilizing clamp member 811 to pick up or put down wafer W is released, thus have and clamp the edge of wafer W and the advantage that obtains the stable state that picks up at certain position all the time.
It is important that, liquid supply machine 815 is arranged at clamp member 811, receives the liquid such as pure water or cleaning fluid from liquid supply unit L, to the abradant surface of wafer W that clamp member 811 is clipped, in the way of injection or outflow, provide the liquid such as pure water 97, maintain the moisture state of wafer W abradant surface.So, because the time needed for the chemical mechanical milling tech of each unit wafer and the time needed for cleaning have the time difference, so there is the time waited in the wafer completing chemical mechanical milling tech before being sent to next cleaning, maintain the moisture state of wafer W abradant surface be in order to, prevent within the described stand-by period abradant surface of wafer because of dry and impaired.Therefore, liquid supply machine 815 is set as described above in fixture 81, prevents the abradant surface of wafer W to be sent to the waiting time of cleaning because of dry and impaired in wait.
During by liquid supply machine 815 for liquid 97, the state of wafer W can be horizontally or vertically, but in order to be attached to the big foreign matter of wafer W surface from the removal of the surface of wafer W with less liquid 97, can stand vertically in wafer W or have under the heeling condition of vertical direction composition, from liquid supply machine 815 for liquid 97.
Additionally, the cleaning module X2 of substrate board treatment 100 is as the multi-step cleaning machine of wafer after CMP, as to experience cmp (Chemical Mechanical Polishing, CMP) device that wafer W of technique is cleaned successively, including: first cleaning machine C1, C2, it carries out the first cleaning, to remove inorganic foreign matter to wafer W after experience chemical mechanical milling tech；Second cleaning machine C3, it carries out the second cleaning to wafer W after first cleaning machine C1, C2 completes cleaning, to remove foreign organic matter；3rd cleaning machine C4, it rinses drying process to wafer W after the second cleaning machine C3 completes the second cleaning；First buffer 10, before its wafer after first cleaning machine C1, C2 completes the first cleaning is sent to the second cleaning machine C3, is used for placing 10x wafer；Second buffer 10', before its wafer W after the second cleaning machine C3 completes the second cleaning is sent to the 3rd cleaning machine C4, is used for placing 10x wafer；Transfer unit Go, it makes wafer W move between each cleaning machine C1, C2, C3 and buffer 10,10'.
Described cleaning machine C (C:C1, C2, C3, C4) can carry out polytype cleaning.Such as, first cleaning machine C1, C2 carries out the first cleaning of contact, the first cleaning of described contact, when making wafer between the brush of a pair rotation, it is carried out with normal temperature supply inorganic solvent and the organic solvent that comprises SC1.Thus, cleaned by friction, remove in chemical mechanical milling tech and be attached to the lapping liquid on wafer W abradant surface and foreign matter etc..The first cleaning that first cleaning machine C1, C2 is carried out needs the longer time relatively, and therefore, its number of the arrangement is more than requiring time for the second relatively short cleaning module.
Then, as shown in Figure 7, in the second cleaning machine C3 when wafer W being positioned on mounting table 75 rotation 77, the foreign organic matter being attached to wafer W abradant surface is removed by contactless cleaning way, described contactless cleaning way is, by moving the nozzle (not shown) of 58 and be heated to 50 DEG C of organic solvents 56 to 100 DEG C of high temperature to the injection of wafer W abradant surface carrying out cycle by the way of having radially composition.Now, containing sulfuric acid (HS) in organic solvent, thus remove the organic matter being attached to wafer W surface.
So, in a processing unit X2, in addition to including first cleaning machine C1, C2 of the inorganic foreign matter of the residual of the wafer W surface after removing chemical mechanical milling tech, also include the second cleaning machine C3 removing the foreign organic matter in wafer W surface residual, therefore, all inorganic foreign matter and foreign organic matter can be removed, it is thus achieved that more improve the effect of the cleaning state of wafer in a processing unit X2.And, the organic solvent comprising sulfuric acid (HS) is heated to more than 50 DEG C, provides with contactless spray regime to wafer W abradant surface, thus there is the advantageous effects that can the most effectively remove the foreign organic matter in wafer surface residual.
It addition, described second cleaning machine C3 is configured to carbon dioxide spray gun (CO2 blaster) form, described carbon dioxide spray gun sprays to wafer W surface with the injection form of nozzle as shown in Figure 7 after being cooled down by carbon dioxide.Buffer 10' plays the effect making wafer W of cooling return to normal temperature.Because being ejected into wafer W surface with nozzle after being configured to cool down carbon dioxide, so can have the advantage that carbon dioxide sprays for small ice crystal form in an atmosphere, thus wafer W surface can be cleaned within the shorter time with the form vaporized together with the foreign matter remaining in wafer surface.
According to the composition shown in Fig. 3, it is the about twice that the second cleaning machine C3 carries out the time needed for the second cleaning that first cleaning machine C1, C2 carries out the time needed for the first cleaning, during it is therefore preferable that often set a second cleaning machine C3, two first cleaning machines C1, C2 are set.
3rd cleaning machine C4 can carry out the 3rd cleaning (in the utility model, " cleaning " includes being dried and rinsing technique) rinsing and being dried.But, the utility model is not limited to these cleaning forms, can arrange and arrange the cleaning module of variform.
Described buffer 10,10' include: the first buffer 10, before its wafer W after first cleaning machine C1, C2 completes the first cleaning is sent to the second cleaning machine C3, are used for placing 10x wafer；Second buffer 10', before its wafer W after the second cleaning machine C3 completes the second cleaning is sent to the 3rd cleaning machine C4, is used for placing 10x wafer.
As shown in Figure 4, described buffer 10,10' include: place pin (pin) 11, and it is can make minimum number support wafer W that wafer W hold mode is stable；Multi-layer supporting plate 12, it is fixed with placement pin 11, so as to place 10x wafer W up and down；Support column 13, fagging 12 is carried out upper-lower position and fixes by it；Substrate (base) 14, its fixing support column 13；Drive division 14a, it is by moving up and down substrate 14, adjusts the position placing pin 11 up and down；Pure water supply unit 15, it is by the pump 15a for supplying pure water, to being placed on the wafer W surface supply pure water placed on pin 11.
So, buffer 10,10' are can arrange in the way of moving up and down by drive division 15, therefore, transfer unit Go with identical height to buffer 10,10' supply wafer W time, it is also possible to be placed individually on the placement pin 11 being positioned at different layers.
Additionally, by pure water supply unit 15 to be placed on buffer 10,10' wafer W surface coating pure water, therefore, it is possible to persistently keep wafer W moisture state.Thus, prevent wafer W because of dry and impaired.Pure water supply unit 15 is arranged at each layer of buffer 10,10', persistently provides pure water to the wafer W surface being placed on each layer, although do not illustrate on figure, especially for the state that the abradant surface holding of wafer W is moistening, is coated with pure water with bottom surface on wafer W.The composition of pure water supply unit 15 all includes spraying pure water with jet flow (jet) form, and it is coated with pure water in the broader context with spraying (spray) form, and though it is not illustrated, may also comprise dipping (dipping) in the composition of pure water.
Additionally, each buffer 10,10' are configured between neighbouring cleaning unit C1, C2, C3, C4 come and go.Specifically, wafer W of the first cleaning will be completed at first cleaning machine C1, C2, the second cleaning machine C3 it is supplied to after the first buffer 10 is placed temporarily, therefore, the path that the first buffer 10 is arranged between first cleaning machine C1, C2 and the second cleaning machine C3 along reciprocating carries out back and forth movement 10d.Then, wafer W of the second cleaning will be completed at the second cleaning machine C3, being supplied to the 3rd cleaning machine C4 after the second buffer 10' places temporarily, therefore, the path round-trip that the second buffer 10' is arranged between the second cleaning machine C3 and the 3rd cleaning machine C4 along reciprocating moves.Thus, when buffer 10,10' place wafer W, buffer 10,10' move adjacent to the position of some cleaning machine C1, C2, C3 and receive wafer W, then move to position supply wafer W of neighbouring another cleaning machine C3 or processor C4, so that the mobile route of the transfer unit Go of transfer wafer W minimizes, improve process efficiency.
Now, because first cleaning machine C1, C2 is multiple, so the first buffer 10 is preferably configured as between multiple first cleaning machine C1, C2 and the second cleaning machine C3 contact.Thus, to transfer unit Go in order to wafer being placed into buffer 10, path upper and close for 10', or in order to the wafer being placed on buffer 10,10' being moved to next cleaning unit and close path minimizes.Thus, it is effectively shortened the time carrying out wafer multi-step cleaning.
It addition, buffer 10,10' can use the disclosed various ways such as leading screw (leadscrew) along the back and forth movement of guide rail (guide rail) R.Simply, when first buffer 10 and the second buffer 10' moves on a guide rail R, in order to enable the first buffer 10 and the second buffer 10' independently to move, preferably by being arranged on linear electric motors (linear motor) back and forth movement on substrate 14 or works (not shown) below.
Described transfer unit Go includes: first fixture Gr1, Gr2, wafer W completing CMP is delivered to first cleaning machine C1, C2 by its chemically mechanical lapping module X1, and wafer W completing the first cleaning at first cleaning machine C1, C2 is delivered to the first buffer 10；Second fixture Gr3, it picks up and is placed on wafer W of the first buffer 10 and delivers to the second cleaning machine C3, wafer W completing the second cleaning at the second cleaning machine C3 is delivered to the second buffer 10'；3rd fixture Gr4, it picks up wafer W being placed on the second buffer 10' and delivers to the 3rd cleaning machine C4, and wafer W completing the 3rd cleaning at the 3rd cleaning machine C4 is delivered to next technique；Guide rail, its guide clamp Gr1, Gr2, Gr3 along along described module C, 10, the mobile route Rx of 10' moves along a straight line.
Then, fixture Gr1, Gr2, Gr3 of transfer unit Go is arranged to, it is possible to wire (guide line) Gx carrying out back and forth movement along opposite rail Rx carries out back and forth movement 98d.Multiple wire Gx can carry out independent back and forth movement 99d by opposite rail Rx, and fixture Gr1, Gr2, Gr3 carry out independent back and forth movement 98d along guide rail Rx.Therewith, carry out fixture Gr1, Gr2, Gr3 and the guide rail Rx of independent back and forth movement, drive back and forth movement by published devices such as linear electric motors.
Now, guide rail Rx is horizontally arranged, and moves horizontally while fixture Gr1, Gr2, Gr3 identical height of holding.Even if identical with this, buffer 10,10' adjust height and receive placement wafer W, therefore, it is possible to place wafer on the buffering pin 11 of multilayer.
Below, according to an embodiment of the present utility model constructed as disclosed above, the wafer that completes chemical mechanical milling tech multi-step cleaning machine, wafer W completing CMP is supplied to relatively need two first cleaning machines C1, the C2 of long-time (such as 28 seconds), carries out the first cleaning S101；Complete wafer W of the first cleaning at first cleaning machine C1, C2, if the second cleaning machine C3 is not empty, is then sent to the first buffer 10 and is placed on placement pin 11.Now, two first cleaning machines C1, C2 often complete the first cleaning, and the first buffer 10 is moved close to the position of first cleaning machine C1, C2, make the mobile route of first fixture Gr1, Gr2 minimize, and receive the placement of wafer W.
Then, when the second cleaning machine C3 is available, wafer W being placed on the first buffer 10 is sent to the second cleaning machine C3S102, carries out the second cleaning at the second cleaning machine C3.The time of the second cleaning that the second cleaning machine C2 is carried out, time short (ratio such as from about 15 seconds) than the first cleaning, therefore the wafer of the first cleaning is completed at two first cleaning machines C1, C2, the second cleaning is carried out at a second cleaning machine C3, and wrap vitriolated organic solvent by nozzle injection simultaneously, remove at short notice and remain in the foreign organic matter S103 in wafer W.
Then, the wafer after the second cleaning machine C3 completes the second cleaning, if the 3rd cleaning machine C4 is not available, then it is sent to the second buffer 10' and is placed on S104 on placement pin 11.When wafer is placed on the second buffer 10', it is in heated organic solvent while the second cleaning and is heated to the temperature state higher than normal temperature, but the period temperature placed at the second buffer 10' drops to close to normal temperature S105.Thus, the characterization processes that next processor C4 carries out rinsing drying process or detecting wafer state is smoothly entered.
Then, after the 3rd cleaning machine C4 completes the process technique (such as rinsing drying process or characterization processes) of another wafer, deliver to the 3rd cleaning machine C4 from the second buffer 10', carry out processing technique at the 3rd cleaning machine C4.
So, the wafer after each cleaning machine C1, C2, C3, C4 complete cleaning is placed on buffer 10,10', and therefore, cleaning machine C1, C2, C3 can be carried out continuously cleaning incessantly.Wafer in the second cleaning machine C3 heating cools down on buffer 10', can be smoothed out next step rinses drying process or characterization processes, thereby, it is ensured that cleaned up by high temperature organic solvent by the organic matter remained in wafer W, and the multi-step cleaning of more wafer can be completed within the shorter time.
This is described as follows.First supply wafer W1, W2, W3 to cleaning machine C1, C2, C3, C4, each machine completes the cleaning of regulation or processes technique.In other words, the first cleaning of the first wafer W1 is carried out at two first cleaning machines C1, C2, carry out the second cleaning of the second wafer W2 at the second cleaning machine C3, carry out the 3rd cleaning (with reference to Fig. 6 a) of the 3rd wafer W3 at the 3rd cleaning machine C4.As reference, the first wafer W1, the second wafer W2, the 3rd wafer W3 are not different wafers, impart different names in order to the continuous productive process of wafer is described.
Now, at the end of second cleaning of the second wafer W2 that the first cleaning of the first wafer W1 that first cleaning machine C1, C2 is carried out is carried out prior to the second cleaning machine C3, as shown in Figure 6 b, the first wafer W1 completing the first cleaning at first cleaning machine C1, C2 is delivered to the first buffer 10 place.Now, first wafer W1 is with the state clipped by first fixture Gr1, Gr2, after guide rail Gx moves along the direction that drawing reference numeral 99d2 marks, by making first fixture Gr1, Gr2 move horizontally 98d1 along guide rail Gx, thus place the first wafer W1 on the first buffer 10.
Then, as fig. 6 c, the 0th wafer W0 immediately completing CMP is delivered to first cleaning machine C1, C2 and is carried out the first cleaning by first fixture Gr1, Gr2.First cleaning machine C1, C2 carry out the first cleaning needed for time carry out the second cleaning than the second cleaning machine C3 needed for time long, therefore, the quantity of first cleaning machine C1, C2 is that two quantity than the second cleaning machine C3 are many, forms the first cleaning.Although in the first cleaning, it is provided that inorganic solvent cleans wafer but it also may put into organic solvent simultaneously and inorganic solvent cleans wafer.
Then, when the second cleaning machine C3 completes the second cleaning of the second wafer W2, as fig. 6 c, second wafer W2 is delivered to the second buffer 10' by the second fixture Gr3, the first wafer W1 being placed on the first buffer 10 is delivered to the second cleaning machine C3 by the second fixture Gr3, carries out the second cleaning (Fig. 6 d).As it is shown in fig. 7, will warm up the organic solvent high-pressure injection including sulfuric acid of more than 50 DEG C to wafer W surface at the second cleaning machine C3, thus remove the organic matter of wafer W surface residual completely.
Then, as shown in fig 6d, wafer W2 completing the second cleaning at the second cleaning machine C3 delivers to the second buffer 10', is cooled down by normal temperature at the second buffer 10', keeps moistening and is cooled by being supplied to the pure water on wafer W2 surface simultaneously.Now, plural wafer W2 is placed on second buffer 10', therefore wafer W2 need not extra cool time, the wafer before supplied to the second buffer 10' is put to rinse drying process or characterization processes after supercooling, therefore, it is not delayed the time of integrated artistic needs and make good progress, thus shorten the integrated artistic time.
3rd cleaning machine C4 completes after the 3rd cleaning to the 3rd wafer W3 (Fig. 6 d), is placed on the second wafer W2 that the second buffer 10' waits and is delivered to the 3rd cleaning machine C4 by the 3rd fixture Gr4 and carry out the 3rd cleaning (Fig. 6 e).
The multi-step cleaning machine of the cleaning module X2 of the wafer processing means 100 according to an embodiment of the present utility model constructed as disclosed above, wafer W after making the second cleaning machine C3 clean, before being sent to carry out next the 3rd processor C4 processing technique, it is placed on the buffer 10' placing wafer W, therefore, when the second cleaning machine C3 completes the second cleaning, the second cleaning machine C3 can be vacated immediately, the second cleaning machine C3 is enable continuously next wafer W to be carried out the second cleaning, therefore, the time not only shortening wait improves process efficiency, and, at the second cleaning machine C3 by removing foreign organic matter and wafer that the high temperature organic solvent that sprays is heated, buffer 10' is cooled down, solve to cool down the problem needing the additional technique time.
Thus, the utility model, to a wafer, is not only able to remove inorganic foreign matter and foreign organic matter neatly, also shortens the process time that the cleaning-drying of wafer needs.
Then, buffer 10,10' possess the space that can place two or more wafer W up and down, and can move up and down, therefore, even if the transfer unit Gr of transfer wafer W does not moves up and down and only moves horizontally, it is also possible to while taking less production space, need not repeat just to place plural wafer, thus, make control become simple, reduce the possibility of generating process mistake.
Thus, making the stand-by period of the multi-step cleaning of removal foreign matter minimize, each cleaning machine C1, C2, C3, C4 can be carried out technique to wafer continuously, shorten scavenging period with this, improve the efficiency of cleaning.
Above, by preferred embodiment, the utility model is illustrated.But, the utility model is not limited to these specific embodiments, it is possible to the technological thought proposed in the utility model, specifically within the category that utility model registration right is recorded, carries out the amendment of variform, change or improves.
Symbol description
W: wafer P: abrasive disk
C1, C2: first cleaning machine the C3: the second cleaning machine
C4: the three cleaning machine Go: transfer unit
10: the first buffer the 10': the second buffers
11: placement pin 12: gripper shoe
13: support column 15: pure water supply unit
56: organic solvent
Claims (14)
1. a multi-step cleaning machine for wafer, as be carried out successively the wafer completing chemical mechanical milling tech
Device, it is characterised in that including:
First cleaning machine, the wafer completing chemical mechanical milling tech is carried out by it；
Second cleaning machine, it provides organic solvent to the surface of described wafer, to remove the foreign organic matter of wafer surface attachment；
Transfer unit, it moves described wafer.
The multi-step cleaning machine of wafer the most according to claim 1, it is characterised in that:
Described second cleaning machine provides the organic solvent being heated to more than 50 DEG C to the surface of described wafer, to remove wafer table
The foreign organic matter of face attachment.
The multi-step cleaning machine of wafer the most according to claim 2, it is characterised in that:
Described second cleaning machine sprays organic solvent in a non contact fashion to the surface of described wafer.
The multi-step cleaning machine of wafer the most according to claim 3, it is characterised in that:
Described second cleaning machine, when making described wafer rotate, makes the mobile tool of the nozzle of the described organic solvent of injection
Spray while having the radial direction composition of wafer.
The multi-step cleaning machine of wafer the most according to claim 4, it is characterised in that: described second cleaning machine injection
Described organic solvent comprise sulfuric acid, in a non contact fashion to the surface of described wafer spray organic solvent.
The multi-step cleaning machine of wafer the most according to claim 1, it is characterised in that:
Described first cleaning machine is to the carbon dioxide of the abradant surface surface of the wafer injection state of cooling.
The multi-step cleaning machine of wafer the most according to claim 1, it is characterised in that:
Described first cleaning machine provides to described wafer in the organic solvent of inorganic solvent and the dissolved organic matter dissolving inorganic matter
Some more than, remove the foreign matter that remains at described wafer surface.
8. according to the multi-step cleaning machine of the wafer described in any one in claim 1 to 7, it is characterised in that bag
Include:
Buffer, it is before the described wafer that described second cleaning machine cleans is sent to carry out the processor of next technique,
For placing described wafer,
Thus the described wafer heated by high temperature organic solvent at described second cleaning machine, cooled down at described buffer.
The multi-step cleaning machine of wafer the most according to claim 8, it is characterised in that:
Described processor is irradiation modules, and it is dried described wafer.
The multi-step cleaning machine of wafer the most according to claim 8, it is characterised in that:
Described wafer has been the wafer of chemical mechanical milling tech, and described buffer is provided with places two or more wafer
Space.
The multi-step cleaning machine of 11. wafers according to claim 10, it is characterised in that: described wafer is completing
Learning the wafer of mechanical milling tech, described buffer is provided with the space placing two or more wafer up and down, described buffer
Can move up and down.
The multi-step cleaning machine of 12. wafers according to claim 11, it is characterised in that:
Described wafer has been the wafer of chemical mechanical milling tech, described transfer unit from described second cleaning machine necessarily
Described wafer is placed on described buffer by height.
The multi-step cleaning machine of 13. wafers according to claim 8, it is characterised in that:
Described wafer has been the wafer of chemical mechanical milling tech, and described buffer is arranged to reciprocate, thus
Make described buffer after described second cleaning machine accepts described wafer, it is possible to provide described crystalline substance to next described processor
Unit.
The multi-step cleaning machine of 14. wafers according to claim 8, it is characterised in that:
Described wafer has been the wafer of chemical mechanical milling tech, and described buffer is in order to keep wafer wet in placing
Profit state and liquid is provided.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0144639 | 2014-10-24 | ||
| KR1020140144639A KR20150047442A (en) | 2013-10-24 | 2014-10-24 | Wafer treatment system and wafer multi-step cleaning apparatus used therein |
| CN201520652693.2U CN205122542U (en) | 2014-10-24 | 2015-08-26 | Brilliant first processing apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520652693.2U Division CN205122542U (en) | 2014-10-24 | 2015-08-26 | Brilliant first processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205564714U true CN205564714U (en) | 2016-09-07 |
Family
ID=55588757
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521052655.XU Active CN205564714U (en) | 2014-10-24 | 2015-08-26 | Rapid cleaning machine of wafer multistep |
| CN201520652693.2U Active CN205122542U (en) | 2014-10-24 | 2015-08-26 | Brilliant first processing apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520652693.2U Active CN205122542U (en) | 2014-10-24 | 2015-08-26 | Brilliant first processing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20150047442A (en) |
| CN (2) | CN205564714U (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102503628B1 (en) * | 2016-06-13 | 2023-02-24 | 주식회사 케이씨텍 | Apparatus of transferring substrate |
| CN108022855A (en) * | 2016-11-03 | 2018-05-11 | 上海新昇半导体科技有限公司 | A kind of semiconductor wafer wet clean equipment |
| CN108573904B (en) * | 2018-04-14 | 2021-08-20 | 芜湖扬展新材料科技服务有限公司 | Silicon plate mechanical cleaning device |
| KR102533567B1 (en) * | 2018-09-07 | 2023-05-17 | 항저우 중구이 일렉트로닉 테크놀로지 컴퍼니 리미티드 | Chemical and mechanical planarization equipment and wafer transfer method, wafer planarization unit |
| KR101962090B1 (en) * | 2018-12-03 | 2019-03-26 | 권종진 | Wafer polishing apparatus and method thereof |
| CN114888983A (en) * | 2022-05-31 | 2022-08-12 | 杭州中为光电技术有限公司 | Automatic chamfering and cleaning integrated equipment for silicon wafers |
-
2014
- 2014-10-24 KR KR1020140144639A patent/KR20150047442A/en not_active Application Discontinuation
-
2015
- 2015-08-26 CN CN201521052655.XU patent/CN205564714U/en active Active
- 2015-08-26 CN CN201520652693.2U patent/CN205122542U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150047442A (en) | 2015-05-04 |
| CN205122542U (en) | 2016-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205564714U (en) | Rapid cleaning machine of wafer multistep | |
| US7591601B2 (en) | Coater/developer, coating/developing method, and storage medium | |
| CN102592969B (en) | The control method of coating process and apparatus for coating | |
| WO2001084621A1 (en) | Rotation holding device and semiconductor substrate processing device | |
| WO2005015627A1 (en) | Substrate processing apparatus, substrate processing method, and substrate holding apparatus | |
| JP5478586B2 (en) | Cleaning device, peeling system, cleaning method, program, and computer storage medium | |
| CN106449470A (en) | Substrate liquid treatment apparatus and substrate liquid treatment method | |
| US20140284000A1 (en) | Separation apparatus, separation system, separation method and non-transitory computer readable storage medium | |
| TW201234443A (en) | Peeling apparatus, peeling system, peeling method, and computer storage medium | |
| TWI736934B (en) | Substrate processing apparatus and substrate processing method | |
| TW201100177A (en) | Liquid processing apparatus, liquid processing method, and storage medium | |
| KR20160022834A (en) | Apparatus and method for taping adhesive film on semiconductor substrate | |
| JP6329813B2 (en) | Transfer robot | |
| TW202216312A (en) | Spm processing of substrates | |
| JPH025410A (en) | Apparatus for removing substance from wafer | |
| US20150013602A1 (en) | Film forming system | |
| TW202040737A (en) | Wafer processing tools and methods thereof | |
| KR101884640B1 (en) | Chemical mechanical polishing system and method thereof | |
| US20150013606A1 (en) | Film forming system | |
| CN204596757U (en) | Carry out the multi-step cleaning device of the wafer of cmp operation | |
| US9731322B2 (en) | Plating apparatus, plating method and storage medium having plating program stored thereon | |
| JP5563530B2 (en) | Peeling apparatus, peeling system, peeling method, program, and computer storage medium | |
| US7828488B2 (en) | Developing apparatus, developing method, coating and developing system and storage medium | |
| KR101489230B1 (en) | Chamber structure of substrate cleaning apparatus | |
| JP4063605B2 (en) | Application processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180418 Address after: Korea city Daoan Patentee after: Case Polytron Technologies Inc Address before: Korea city Daoan Patentee before: K.C. Polytron Technologies Inc |
|
| TR01 | Transfer of patent right |