CN205543345U - A flexible shell fragment touches finger for IGBT integrated power module - Google Patents
A flexible shell fragment touches finger for IGBT integrated power module Download PDFInfo
- Publication number
- CN205543345U CN205543345U CN201620245190.8U CN201620245190U CN205543345U CN 205543345 U CN205543345 U CN 205543345U CN 201620245190 U CN201620245190 U CN 201620245190U CN 205543345 U CN205543345 U CN 205543345U
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- Prior art keywords
- shell fragment
- fingertip
- flexible shell
- power module
- integrated power
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- 239000012634 fragment Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000008188 pellet Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 description 4
- 229920000742 Cotton Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
The utility model discloses a flexible shell fragment touches finger for IGBT integrated power module relates to electron technical field. Flexible shell fragment touches and indicates for the spill sheet structure, just the interior notch of spill sheet structure is the opening, the shoulder protrusion structure of spill sheet structure sets up for contact, two contact symmetries, the bottom of spill sheet structure is planar structure. The transformer station bus differential protection system has advantages of simple structure and low costs. Resilience excellent performance guarantees to arrange flexible contact with mother, and electrically conductive reliability is guaranteed to the circular arc contact, long service life and application scope are wide.
Description
Technical field
This utility model relates to electronic technology field, particularly relates to a kind of flexible shell fragment fingertip for IGBT integrated power module.
Background technology
Along with the propelling of the theories such as energy-conserving and environment-protective, there is the application commercially of the IGBT module of the features such as energy-conservation, convenient to install and maintain and heat radiation is stable more and more extensive.In existing IGBT module, it is that the compression rebound using silica gel cotton is to realize the function of flexible contact conduction between busbar and chip mostly.The silica gel cotton of existing use makes the problems such as single, the high expensive of the form flexibly connected between busbar and chip.
Utility model content
The purpose of this utility model is to provide a kind of flexible shell fragment fingertip for IGBT integrated power module, thus solves foregoing problems present in prior art.
To achieve these goals, flexible shell fragment fingertip for IGBT integrated power module described in the utility model, described flexible shell fragment fingertip is spill laminated structure, and the inner recess of described spill laminated structure is opening, the shoulder projective structure of described spill laminated structure is contact, two contacts are symmetrical arranged, and the bottom of described spill laminated structure is planar structure.
Preferably, described contact is arc structure, and described arc structure is evagination circular arc.
Preferably, the sidewall of described spill laminated structure is waveform, and two sidewalls are oppositely arranged and form up-narrow and down-wide cavity with the bottom of described spill laminated structure.
Preferably, by described planar structure, described flexible shell fragment fingertip is connected with the busbar of IGBT integrated power module.
Preferably, the described flexible contact of shell fragment fingertip contacts connection with the chip of IGBT integrated power module.
Preferably, the sheet thickness of described spill laminated structure is 0.2mm～0.6mm.
Preferably, the material of described spill laminated structure is copper alloy, and described copper alloy surface is through electroplating processes.
The beneficial effects of the utility model are:
The copper alloy that flexible shell fragment fingertip employing described in the utility model conducts electricity very well, intensity is high is made, and its surface to reduce its contact resistance through electroplating processes, has the electrically conducting manner of flexible contact, has the advantage that
1) flexible shell fragment contact finger structure described in the utility model is simple, low cost；2) rebound performance is excellent, it is allowed to bigger decrement, it is ensured that with busbar flexible contact, can effectively supplement parallelism error between each busbar；3) circular arc contact structure has stable contact force, it is ensured that the reliability of conduction；4) vibrations for a long time can be born under duty；5) service life is long, aging resistance, fatigue resistance height after electroplating processes；6) the current-carrying capacity scope of monolithic can cover 10A～50A, is changed the current capacity of single shell fragment fingertip by change material thickness, product width；7) quantity by increasing spring plate unit increases rated current；8) flexible layout, it is adaptable to different occasions, by changing the size of fingertip, is suitable for the integrated power module of multiple series, and meets current capacity and contact force change within the specific limits.
Accompanying drawing explanation
Fig. 1 is the schematic front view of the flexible shell fragment fingertip for IGBT integrated power module；
Fig. 2 is the right view of Fig. 1；
Fig. 3 is the flexible shell fragment fingertip annexation schematic diagram at IGBT integrated power module；
Fig. 4 is the attachment structure schematic diagram that in Fig. 3, flexible shell fragment fingertip is arranged with mesh；
Wherein, 1 represents flexible shell fragment fingertip, and 2 represent upper shell, and 3 represent busbar, and 4 represent chip.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, this utility model is further elaborated.Should be appreciated that detailed description of the invention described herein, only in order to explain this utility model, is not used to limit this utility model.
Embodiment
See figures.1.and.2, for the flexible shell fragment fingertip of IGBT integrated power module described in the present embodiment, described flexible shell fragment fingertip is spill laminated structure, and the inner recess of described spill laminated structure is opening, the shoulder projective structure of described spill laminated structure is contact, two contacts are symmetrical arranged, and the bottom of described spill laminated structure is planar structure.It is explained in more detail analysis:
(1) described contact is arc structure, and described arc structure is evagination circular arc.
(2) sidewall of described spill laminated structure is waveform, and the bottom that two sidewalls are oppositely arranged with described spill laminated structure forms up-narrow and down-wide cavity.
(3) by described planar structure, described flexible shell fragment fingertip is connected with the busbar of IGBT integrated power module.The described flexible contact of shell fragment fingertip contacts connection with the chip of IGBT integrated power module.
(4) the sheet thickness of described spill laminated structure is 0.2mm～0.6mm.Overall size is L=8～12mm, W=3～5mm, H=4～8mm, the on-demand setting of size of flexible shell fragment fingertip.The material of described spill laminated structure is copper alloy, and surface is through electroplating processes.
As shown in Figure 3, this flexibility shell fragment fingertip is arranged on busbar, when IGBT integrated power module upper and lower casing does not closely cooperates, flexible shell fragment fingertip is between chip and the busbar of IGBT integrated power module, and in the vertical direction there are about the coincidence amount of 0.5mm～1mm.When upper and lower casing coordinates contact, and coupling mechanism force more than the total power of resilience of all flexible shell fragment fingertips time, flexible shell fragment fingertip is compressed about 0.5mm～1mm between busbar and chip, therefore busbar and chip are all possessed certain contact force by this flexible resilient contact, thus ensure the reliability of conduction between busbar and chip.
As shown in Figure 4, the using method for the flexible shell fragment fingertip of IGBT integrated power module described in the utility model is: 1) the plane bottom of flexible shell fragment fingertip is welded or is riveted on busbar；2) in described busbar is arranged on the lower house of described IGBT integrated power module；3) upper shell of described IGBT integrated power module is installed on described busbar；4) chip is installed to bottom the lower house of IGBT integrated power module and with the contact of described flexible shell fragment fingertip；5) closely cooperate installation by the upper and lower casing of IGBT integrated power module, makes IGBT integrated power module be in pre-pressing state, it is ensured that reliable conductive between busbar and chip.
By using technique scheme disclosed in this utility model, obtain following beneficial effect: the copper alloy that flexible shell fragment fingertip employing described in the utility model conducts electricity very well, intensity is high is made, its surface through electroplating processes to reduce its contact resistance, there is the electrically conducting manner of flexible contact, have the advantage that
1) flexible shell fragment contact finger structure described in the utility model is simple, low cost；2) rebound performance is excellent, it is allowed to bigger decrement, it is ensured that with busbar flexible contact, can effectively supplement parallelism error between each busbar；3) circular arc contact structure has stable contact force, it is ensured that the reliability of conduction；4) vibrations for a long time can be born under duty；5) service life is long, aging resistance, fatigue resistance height after electroplating processes；6) the current-carrying capacity scope of monolithic can cover 10A～50A, is changed the current capacity of single shell fragment fingertip by change material thickness, product width；7) quantity by increasing spring plate unit increases rated current；8) flexible layout, it is adaptable to different occasions, by changing the size of fingertip, is suitable for the integrated power module of multiple series, and meets current capacity and contact force change within the specific limits.The above is only preferred implementation of the present utility model; it should be pointed out that, for those skilled in the art, on the premise of without departing from this utility model principle; can also make some improvements and modifications, these improvements and modifications also should regard protection domain of the present utility model.
Claims (7)
1. the flexible shell fragment fingertip for IGBT integrated power module, it is characterised in that described flexible pellet
Sheet fingertip is spill laminated structure, and the inner recess of described spill laminated structure is opening, described spill lamellar
The shoulder projective structure of structure is contact, and two contacts are symmetrical arranged, and the bottom of described spill laminated structure is
Planar structure.
The most flexible shell fragment fingertip, it is characterised in that described contact is arc structure,
Described arc structure is evagination circular arc.
The most flexible shell fragment fingertip, it is characterised in that the side of described spill laminated structure
Wall is waveform, and two sidewalls are oppositely arranged and are formed up-narrow and down-wide with the bottom of described spill laminated structure
Cavity.
The most flexible shell fragment fingertip, it is characterised in that by described planar structure, institute
State flexible shell fragment fingertip to be connected with the busbar of IGBT integrated power module.
The most flexible shell fragment fingertip, it is characterised in that touching of described flexible shell fragment fingertip
Point contacts connection with the chip of IGBT integrated power module.
The most flexible shell fragment fingertip, it is characterised in that the sheet of described spill laminated structure
Thickness is 0.2mm～0.6mm.
The most flexible shell fragment fingertip, it is characterised in that the material of described spill laminated structure
Matter is copper alloy, and described copper alloy surface is through electroplating processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620245190.8U CN205543345U (en) | 2016-03-28 | 2016-03-28 | A flexible shell fragment touches finger for IGBT integrated power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620245190.8U CN205543345U (en) | 2016-03-28 | 2016-03-28 | A flexible shell fragment touches finger for IGBT integrated power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205543345U true CN205543345U (en) | 2016-08-31 |
Family
ID=56786148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620245190.8U Active CN205543345U (en) | 2016-03-28 | 2016-03-28 | A flexible shell fragment touches finger for IGBT integrated power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205543345U (en) |
-
2016
- 2016-03-28 CN CN201620245190.8U patent/CN205543345U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 8 Jufu South Road, Yujiawu Hui Township, Tongzhou District, Beijing, 101105 Patentee after: Beijing Weitongli Electric Co.,Ltd. Address before: 101105 Beijing Tongzhou District Tongzhou District 8 South Road 1 1 1 Patentee before: BEIJING VICTORY ELECTRIC Co.,Ltd. |
|
| CP03 | Change of name, title or address |