CN205542798U - Field effect diode - Google Patents
Field effect diode Download PDFInfo
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- CN205542798U CN205542798U CN201620054295.5U CN201620054295U CN205542798U CN 205542798 U CN205542798 U CN 205542798U CN 201620054295 U CN201620054295 U CN 201620054295U CN 205542798 U CN205542798 U CN 205542798U
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Abstract
The utility model provides a field effect diode, include: the conducting layer, insulating layer and the channel layer that stack gradually, with the first electrode and the second electrode of channel layer contact, the second electrode with the conducting layer electricity is connected. The utility model discloses a field effect diode has high commutating ratio.
Description
Technical field
This utility model relates to field of semiconductor devices, is specifically related to a kind of diode.
Background technology
Owing to the band gap width (1.12eV) of silicon and the band gap width (0.66eV) of germanium are less, therefore
The PN junction diode prepared based on silicon, germanium and the tolerance poor performance of schottky junction diode, i.e. at height
Work when temperature, high voltage, big electric current or illumination and there will be performance degradation problem.
In order to improve the tolerance performance of diode, generally select broad-band gap (i.e. band gap is more than 2eV) half
Conductor prepares diode, such as select band gap be the SiC of 3.2eV, band gap be 3.4eV GaN or
Band gap is the ZnO of 3.4eV.But, wide band gap semiconducter is difficult to simultaneously as N-type and P-type material,
Therefore PN homojunction diode cannot be prepared.And PN heterojunction due to interface quality difference thus is brought
Problems.It addition, the electron affinity of wide band gap semiconducter is relatively big (typically larger than 4.2eV),
It is difficult to form high Schottky barrier with common metal, the reverse electricity of the Schottky diode prepared
Stream is big, commutating character is poor.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of field-effect diode.
Embodiment of the present utility model provides a kind of field-effect diode, including:
Conductive layer, insulating barrier and the channel layer stacked gradually；
The first electrode contacted with described channel layer and the second electrode, described second electrode and described conduction
Layer electrical connection.
Preferably, described first electrode and the second electrode are positioned at the same side of described channel layer.
Preferably, described channel layer is between described first electrode and insulating barrier.
Preferably, described field-effect diode also includes the contacts side surfaces with described insulating barrier and channel layer
Conductive pole, described second electrode is electrically connected with described conductive layer by described conductive pole.
Preferably, described second electrode includes two electricity being distributed in described first electrode opposite sides
Pole.
Preferably, in the form of a ring, described first electrode is positioned in described second electrode described second electrode
The heart.
Preferably, described field-effect diode also includes that substrate, described conductive layer are positioned on described substrate.
Preferably, described field-effect diode also includes dielectric substrate, described first electrode and the second electricity
Pole is positioned in described dielectric substrate.
Preferably, described conductive layer is as the substrate of described field-effect diode.
Preferably, described field-effect diode also includes the electrode block being positioned on described conductive layer surface.
Field-effect diode of the present utility model is the diode of a kind of non-junction type, not Presence of an interface matter
Measure the problems such as poor, reverse current is big.This field-effect diode has unilateal conduction performance, its commutating ratio
3-4 the order of magnitude higher than the commutating ratio of SiGe diode.
Accompanying drawing explanation
Referring to the drawings this utility model embodiment is described further, wherein:
Fig. 1 is the sectional view of the field-effect diode according to first embodiment of this utility model.
Fig. 2 is the VA characteristic curve figure of the field-effect diode shown in Fig. 1.
Fig. 3 is the rectification circuit figure of the field-effect diode shown in Fig. 1.
Fig. 4 is output voltage waveform after the field-effect diode rectification shown in Fig. 3.
Fig. 5 is the sectional view of the field-effect diode according to second embodiment of this utility model.
Fig. 6 is the sectional view of the field-effect diode according to the 3rd embodiment of this utility model.
Fig. 7 is the sectional view of the field-effect diode according to the 4th embodiment of this utility model.
Fig. 8 is the sectional view of the field-effect diode according to the 5th embodiment of this utility model.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with
This utility model is further described by accompanying drawing by specific embodiment.
Fig. 1 is the sectional view of the field-effect diode according to first embodiment of this utility model.Such as figure
Shown in 1, field-effect diode 10 includes that glass substrate 11, tin indium oxide conduct electricity the most successively
Layer 12, alumina insulating layer 13, zinc-oxide channel layer 14, the be positioned on zinc-oxide channel layer 14
One electrode 151 and the second electrode 152,152 ' being arranged on the first electrode 151 opposite sides, and
The conductive pole 162 that contacts with the two opposite side surfaces of alumina insulating layer 13 and zinc-oxide channel layer 14,
162’.Wherein the second electrode 152,152 ' is electrically connected to Indium sesquioxide. by conductive pole 162,162 ' respectively
Stannum conductive layer 12.
Owing to conductive indium-tin oxide layer 12/ alumina insulating layer 13/ zinc-oxide channel layer 14 defines one
Individual metal/oxide/semicoductor capacitor (MOSCAP) structure, is therefore applied to tin indium oxide conduction
Positive voltage on layer 12 is used for regulating the concentration distribution of carrier (electronics) in zinc-oxide channel layer 14,
The carrier concentration making zinc-oxide channel layer 14 surface (near alumina insulating layer 13) rises,
Thus form conducting channel (i.e. conducting channel unlatching), therefore at the second electrode 152,152 ' and first
Between electrode 151, there is electric current.And when applying positive voltage on the first electrode 151, in conducting channel
Carrier by depleted (i.e. conducting channel closedown), now field-effect diode 10 is in and reversely cuts
Only state.Fig. 2 is the VA characteristic curve figure of the field-effect diode shown in Fig. 1.Wherein the second electricity
Pole 152,152 ' is as positive pole, and the first electrode 151 is as negative pole.Figure it is seen that along with
Voltage on positive pole increases, and the electric current (i.e. forward current) in field-effect diode 10 increases rapidly.
And the reverse current in field-effect diode 10 does not increase with voltage and increases.The field of the present embodiment
Effect diode 10 has unilateal conduction performance, and its commutating ratio is about 5 × 108, than SiGe two pole
3-4 order of magnitude of commutating ratio height of pipe.
Fig. 3 is the rectification circuit figure of the field-effect diode shown in Fig. 1.Waveform generator 1, field effect
Answering diode 10 and the resistance 2 that resistance is 15 megohms to be connected in series, oscillograph 3 is connected to resistance
2 two ends are for measuring the output voltage at resistance 2 two ends.
Fig. 4 is output voltage waveform after the field-effect diode rectification shown in Fig. 3.As shown in Figure 4,
The input voltage that waveform generator 1 provides is the sinusoidal ac of a series of different amplitude, output voltage
It it is the positive polarity voltage signal of a series of different amplitude.Field-effect diode 10 is by sinusoidal ac
Negative half period filters, it is achieved that the function of halfwave rectifier.
Below by the preparation method of summary field-effect diode 10.First by rf magnetron sputtering skill
Art prepares, in clean glass substrate 11, the conductive indium-tin oxide layer 12 that thickness is 100 nanometers, connects
Use technique for atomic layer deposition on conductive indium-tin oxide layer 12, prepare the oxidation that thickness is 50 nanometers
Aluminum insulation layer 13 is the most graphical to it, uses radiofrequency magnetron sputtering technology on alumina insulating layer 13
Prepare zinc-oxide channel layer 14 that thickness is 50 nanometers graphical to it, use rf magnetron sputtering
Technology is depositing indium tin oxide electrode layer on zinc-oxide channel layer 14, is formed and alumina insulating layer 13
With the conductive pole 162,162 ' of two contacts side surfaces of zinc-oxide channel layer 14, finally use ultraviolet light
Lithography makes the indium tin oxide electrode layer on zinc-oxide channel layer 14 form the first electrode 151 and
Two electrodes 152,152 '.
Fig. 5 is the sectional view of the field-effect diode 20 according to second embodiment of this utility model.
It is essentially identical with Fig. 1, and difference is, the first electrode 251 is positioned at the second electrode 252 in the form of a ring
Center.After applying forward conduction voltage between the second electrode 252 and the first electrode 251, lead
Carrier in electricity raceway groove is to move to surrounding in the center of the conducting channel from zinc-oxide channel layer 24,
Compared to field-effect diode 10, add the area of conducting channel, therefore reduce field effect two pole
The forward conduction resistance of pipe 20.Its operation principle is identical with field-effect diode 10 with commutating character,
Do not repeat them here.
Fig. 6 is the sectional view of the field-effect diode 30 according to the 3rd embodiment of this utility model,
It is essentially identical with Fig. 1, and difference is, the first electrode 351 and the second electrode 352,352 ' are arranged
In dielectric substrate 31.Due to the conductive indium-tin oxide layer 32 electrically connected with the second electrode 352,352 '
It is positioned at the superiors of dielectric substrate 31, therefore can be easily on conductive indium-tin oxide layer 32
Welding electrode lead-in wire (Fig. 6 is not shown).After applying positive voltage on conductive layer 32, equally at oxygen
The surface (near alumina insulating layer 33) changing zinc channel layer 34 forms conducting channel, and its work is former
Manage identical with field-effect diode 10 with commutating character, do not repeat them here.
Fig. 7 is the sectional view of the field-effect diode 40 according to the 4th embodiment of this utility model,
It is essentially identical with Fig. 1, and difference is, field-effect diode 40 has leading of being made of stainless steel
Electricity substrate 41, conductive substrates 41 is in addition to as substrate, also as leading in field-effect diode 40
Electric layer (i.e. metal in MOSCAP structure), therefore eliminates the conductive layer in conductive substrates 41
Preparation technology, low cost, simple in construction.After applying positive voltage in conductive substrates 41, with
Sample forms conducting channel on the surface (near alumina insulating layer 43) of zinc-oxide channel layer 44, its
Operation principle is identical with field-effect diode 10 with commutating character, does not repeats them here.
Fig. 8 is the sectional view of the field-effect diode according to the 5th embodiment of this utility model, its with
Fig. 7 is essentially identical, and difference is, field-effect diode 50 also includes being arranged in conductive substrates 51
Electrode block 52.Contact conductor (Fig. 8 is not shown) is welded on electrode block 52 and can obtain relatively
Big tensile strength, it is to avoid contact conductor and conductive substrates 51 are directly connected to the problem that comes off brought.
According to other embodiments of the present utility model, field-effect diode has more or less than two
Two electrodes.
According to other embodiments of the present utility model, conductive pole can be selected for the second electrode, conductive layer not
Same conductive material, as long as can make to be formed between the second electrode and conductive layer electrically connects.
Above-mentioned operation principle based on field-effect diode of the present utility model, those skilled in the art
Understanding, the channel layer materials in above-described embodiment includes but not limited to silicon, germanium, Indium sesquioxide., indium zinc oxygen,
Indium gallium zinc oxygen, gallium nitride, carborundum, Benzo[b, rubrene, high 3-base thiophene, Graphene,
The semi-conducting materials such as molybdenum bisuphide.First electrode, the material of the second electrode are not limited to tin indium oxide,
Can also is that conducting metal or conducting metal oxide, such as gallium zinc oxygen (GZO), aluminum zinc oxygen (AZO)
Or fluorine stannum oxygen (FTO).The material of insulating barrier is not limited to aluminium oxide, it is also possible to be silicon oxide, nitrogen
SiClx, hafnium oxide, zirconium oxide, the insulant such as polymethyl methacrylate.Backing material does not limit
Then glass, it is also possible to be silicon, sapphire, polyimides, PEN, poly-right
PET etc..
Although this utility model has been described by means of preferred embodiments, but this utility model is also
It is not limited to embodiment as described herein, also includes in the case of without departing from this utility model scope
Done various changes and change.
Claims (10)
1. a field-effect diode, it is characterised in that including:
Conductive layer, insulating barrier and the channel layer stacked gradually；
The first electrode contacted with described channel layer and the second electrode, described second electrode and described conduction
Layer electrical connection.
Field-effect diode the most according to claim 1, it is characterised in that described first electricity
Pole and the second electrode are positioned at the same side of described channel layer.
Field-effect diode the most according to claim 2, it is characterised in that described channel layer
Between described first electrode and insulating barrier.
Field-effect diode the most according to claim 1, it is characterised in that described field effect
Diode also includes and described insulating barrier and the conductive pole of the contacts side surfaces of channel layer, described second electrode
Electrically connected with described conductive layer by described conductive pole.
Field-effect diode the most according to claim 1, it is characterised in that described second electricity
Pole includes two electrodes being distributed in described first electrode opposite sides.
Field-effect diode the most according to claim 1, it is characterised in that described second electricity
In the form of a ring, described first electrode is positioned at the center of described second electrode in pole.
Field-effect diode the most according to any one of claim 1 to 6, it is characterised in that
Described field-effect diode also includes that substrate, described conductive layer are positioned on described substrate.
Field-effect diode the most according to any one of claim 1 to 5, it is characterised in that
Described field-effect diode also include dielectric substrate, described first electrode and the second electrode be positioned at described absolutely
On edge substrate.
Field-effect diode the most according to any one of claim 1 to 6, it is characterised in that
Described conductive layer is as the substrate of described field-effect diode.
Field-effect diode the most according to claim 9, it is characterised in that described field effect
Diode also includes the electrode block being positioned on described conductive layer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620054295.5U CN205542798U (en) | 2016-01-20 | 2016-01-20 | Field effect diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620054295.5U CN205542798U (en) | 2016-01-20 | 2016-01-20 | Field effect diode |
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| CN205542798U true CN205542798U (en) | 2016-08-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552134A (en) * | 2016-01-20 | 2016-05-04 | 中国科学院物理研究所 | Field effect diode |
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2016
- 2016-01-20 CN CN201620054295.5U patent/CN205542798U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552134A (en) * | 2016-01-20 | 2016-05-04 | 中国科学院物理研究所 | Field effect diode |
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