CN109742146A - A kind of silicon carbide MOSFET device - Google Patents
A kind of silicon carbide MOSFET device Download PDFInfo
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- CN109742146A CN109742146A CN201811495352.3A CN201811495352A CN109742146A CN 109742146 A CN109742146 A CN 109742146A CN 201811495352 A CN201811495352 A CN 201811495352A CN 109742146 A CN109742146 A CN 109742146A
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Abstract
This application discloses a kind of silicon carbide MOSFET devices, including drain electrode, substrate, epitaxial region, P type trap zone, n+ source region, grid, grid oxygen medium, source electrode and n source region, due to optimizing the internal structure of silicon carbide MOSFET device, so that the electrical characteristic of silicon carbide MOSFET device is improved, to substitute 6.5kVSi IGBT device.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to a kind of silicon carbide MOSFET device.
Background technique
According to statistics, 90% or more electricity consumption is controlled by power device in the world.Power device and its module are that realization is more
The conversion of kind electrical energy form provides efficient approach, in fields such as national defense construction, communications and transportation, industrial production, health cares
It is widely applied.Since 1994 report SiC power MOSFET for the first time, in the development process of SiC power MOSFET
In obtained very big progress.The history of power semiconductor, that is, the history that power semiconductor is weeded out the old and bring forth the new.Often
The release of generation power device all makes the energy more efficiently convert and use.As Technics of Power Electronic Conversion system is for effect
Rate and volume are put forward higher requirements, and silicon carbide will be more and more suitable semiconductor devices.Especially for photovoltaic DC-to-AC converter
It is applied with UPS, SiC device is to realize a kind of very effective means of its high power density.SiC material has forbidden bandwidth very
Greatly, the features such as critical breakdown strength is very high, thermal conductivity is very big, saturated electron drift velocity is very high and dielectric constant is very low, with biography
System Si SBD device is compared, and silicon carbide SBD reverse leakage current is small, is suitble to work under higher temperature and voltage conditions, SiC device
It is more suitable for applying the occasion in high power density, high switching frequency.SiC device can be greatly lowered open compared with Si device
Loss is closed, system effectiveness is improved；Without Reverse recovery, perfect heat-dissipating.1000~2000V can be easily done by doing substrate with SiC
MOSFET, switching characteristic (junction capacitance, switching loss, switching waveform etc.) is then similar to the Si MOSFET of more than 100 volts, conducting
Resistance can more be reduced to milliohm magnitude.The many attracting characteristics of carbofrax material, such as critical breakdown potential of 10 times of silicon materials
Field intensity, high thermal conductivity, big forbidden bandwidth and high electronics saturation drift velocity etc., become SiC material in the world
The research hotspot of power semiconductor, and in high power applications occasion, such as high-speed railway, hybrid vehicle, intelligent high-pressure
Direct current transportation etc., silicon carbide device have been assigned very high expectation.Reduction of the silicon carbide power device to power loss simultaneously
Significant effect, so that silicon carbide power device is known as driving " green energy resource " device of " new energy revolution ".
SiC diode is special since its brilliant reverse recovery characteristic, switching speed are exceedingly fast and are not influenced by junction temperature of chip
It is not the Qr of second and third generation SiC Schottky diode, close to zero (representative value 30nC), leakage current and switching loss are extremely low,
Forward current is 3~20A, and forward conduction voltage drop is 1.7~2V, and reverse withstand voltage is up to 600V.Although SiC Schottky diode is
Many years are applied, but also need further to improve price to obtain broader market.SiC MOSFET has brilliance
Switching loss and extra small conduction loss, bring the decline of system whole volume He other costs.Different chip configurations, can
Effectively to reduce the loss of device, such as the combination of SiC MOSFET+SiC diode exports current capacity ratio IGBT+SiC bis-
Pole pipe is big, and the combination of SiC MOSFET+SiC diode can work in high frequency, reduce the cost and volume of system.SiC function
The performance of current transformer can be enhanced in rate module, and full SiC chip can realize more high voltage, more low-loss with smaller volume, give
The R & D design of traction current transformation system and electrical power transmission system brings more conveniences.The full SiC power device of one side 3.3kV is
It is applied in traction convertor, has significant energy conservation, reduces the effects of current transformer volume and weight；On the other hand
6.5kV Si IGBT device has been used to high-speed rail and electrical power transmission system, therefore there is an urgent need to research and develop substitution 6.5kV SiC power
The silicon carbide MOSFET device of device has reached significant energy conservation, reduces the beneficial effects such as current transformer volume and weight.
Summary of the invention
The present invention solves the technical problem of invent a kind of silicon carbide MOSFET for substituting 6.5kV Si IGBT device
The problem of device.
According in a first aspect, provide a kind of silicon carbide MOSFET device in a kind of embodiment, including drain electrode (30), substrate
(31), epitaxial region (32), P type trap zone (36), n+ source region (37), grid (35), grid oxygen medium (34), source electrode (33) and n source region
(38)；Being cascading from the bottom up has drain electrode (30), substrate (31) and epitaxial region (32)；Source electrode (33) passes through grid oxygen medium
(34), P type trap zone (36) and n source region (38) are isolated with epitaxial region (32)；Grid oxygen medium (34) is contacted with P type trap zone (36), p-type
Well region (36) and n source region (38) contact；Is provided with n+ source region (37) in P type trap zone (36), and with grid oxygen medium (34) and source electrode
(33) it contacts；Grid (35) are provided in grid oxygen medium (34).
According to the silicon carbide MOSFET device of above-described embodiment, due to optimizing the internal junction of silicon carbide MOSFET device
Structure, so that the electrical characteristic of silicon carbide MOSFET device is improved, to substitute 6.5kV Si IGBT device.
Detailed description of the invention
Fig. 1 is the circuit connection diagram of silicon carbide MOSFET device and SBD device in the prior art；
Fig. 2 is the structural schematic diagram of silicon carbide MOSFET device in an embodiment.
Specific embodiment
Below by specific embodiment combination attached drawing, invention is further described in detail.Wherein different embodiments
Middle similar component uses associated similar element numbers.In the following embodiments, many datail descriptions be in order to
The application is better understood.However, those skilled in the art can recognize without lifting an eyebrow, part of feature
It is dispensed, or can be substituted by other elements, material, method in varied situations.In some cases, this Shen
Please it is relevant it is some operation there is no in the description show or describe, this is the core in order to avoid the application by mistake
More descriptions are flooded, and to those skilled in the art, these relevant operations, which are described in detail, not to be necessary, they
Relevant operation can be completely understood according to the general technology knowledge of description and this field in specification.
It is formed respectively in addition, feature described in this description, operation or feature can combine in any suitable way
Kind embodiment.Meanwhile each step in method description or movement can also can be aobvious and easy according to those skilled in the art institute
The mode carry out sequence exchange or adjustment seen.Therefore, the various sequences in the description and the appended drawings are intended merely to clearly describe a certain
A embodiment is not meant to be necessary sequence, and wherein some sequentially must comply with unless otherwise indicated.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object,
Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and
It is indirectly connected with (connection).
Schottky contacts: being the interface of a kind of simple metal and semiconductor, similar to PN junction, has rectification characteristic.
Ohm knot: i.e. Ohmic contact, a kind of interface of simple metal and semiconductor are that abutment does not generate significantly
Additional impedance and it will not make equilibrium carrier concentration inside semiconductor that significant change occur.
MIS knot: the contact structures (Metal-insulator-semiconductor of metal-insulator semiconductor
Junction), contacted between metal and semiconductor by insulator.
MOSFET: metal-oxide half field effect transistor (Metal-Oxide-Semiconductor Field-Effect
Transistor), abbreviation Metal Oxide Semiconductor Field Effect Transistor is that one kind can be widely used in analog circuit and number
The field effect transistor of word circuit.
SBD: Schottky diode (Schottky barrier diode).
SiC: silicon carbide, a kind of wide bandgap semiconductor compound are the representatives of third generation semiconductor, are very suitable to high-power
Production, SiC device answers in the extreme environments such as high temperature, high pressure, high frequency, high-power electronic device field and space flight, military project, nuclear energy
Have irreplaceable advantage with field, compensate for the defect of conventional semiconductor material device in practical applications, just gradually at
For the mainstream of power semiconductor.
Miller capacitor: it is connected across between the output end and input terminal of amplifier (device or circuit of amplification work)
Capacitor.
In embodiments of the present invention, a kind of 6.5kV silicon carbide MOSFET device is disclosed, due to optimizing silicon carbide MOSFET
The internal structure of device, so that the electrical characteristic of silicon carbide MOSFET device is improved.
Embodiment one:
As shown in Figure 1, for the circuit connection diagram of silicon carbide MOSFET device and SBD device in the prior art, carbon
SiClx MOSFET element includes 10, substrate 11, epitaxial region 12, P type trap zone 16, n+ source region 17, grid 15, grid oxygen medium 14 of drain electrode
With source electrode 13.SBD device includes drain electrode 20, substrate 21, epitaxial region 22 and source electrode 23.The source electrode 13 of silicon carbide MOSFET device with
The source electrode 23 of SBD device is electrically connected, and the drain electrode 20 of silicon carbide MOSFET device is electrically connected with the drain electrode 20 of SBD device.It is applied to
The voltage Vpn of pn-junction inside silicon carbide MOSFET device has to be lower than pn-junction Built-in potential, and parasitic diode is prevented to be connected.According to
According to following formula:
JDa=(Vpn-Vk)/(Rdrift-Rsub)
JDaFor the electric current inside silicon carbide MOSFET device, VpnFor the voltage of the pn-junction inside silicon carbide MOSFET device,
VkFor the voltage between the drain electrode and source electrode of SBD device, RdriftFor the epitaxial region resistance of SBD device, RsubFor the lining of SBD device
Bottom resistance, V in another Fig. 1SDA is the voltage for being added to silicon carbide MOSFET device.RdriftEpitaxial region resistance, mainly epitaxial region
In resistance, general power MOSFET uses epitaxial wafer.So-called epitaxial wafer is i.e. in original low resistivity substrate (SUBSTRATE)
Extend outwardly one layer of resistive formation on silicon wafer.Resistive formation is used to withstanding voltage, and low resistivity substrate does not increase many resistance as support again.
For MOSFET, carrier (electronics or hole) is (DRIFT) movement of drifting about under external voltage in these regions, so
Relevant resistance is known as Rdrift.If it is desired to MOSFET's is high pressure resistant, with regard to must improve resistive formation (for N-channel MOS FET,
Claim N- layer) resistivity, but when the resistivity of epitaxial layer raising when, Rdrift is also increased accordingly.
Due to the epitaxial layer characteristic of SiC device, once the cathode for having few electron current to flow to diode in pn diode, bipolar
A possibility that sexual involution effect occurs just will increase.
As shown in Fig. 2, for the structural schematic diagram of silicon carbide MOSFET device in an embodiment, silicon carbide MOSFET device
Including drain electrode 30, substrate 31, epitaxial region 32, P type trap zone 36, n+ source region 37, grid 35, grid oxygen medium 34, source electrode 33 and n source region
38.Being cascading from the bottom up has drain electrode 30, substrate 31 and epitaxial region 32.Source electrode 33 passes through grid oxygen medium 34, P type trap zone
36 and n source region 38 is isolated with epitaxial region 32.Grid oxygen medium 34 is contacted with P type trap zone 36.P type trap zone 36 and n source region 38 contact.P
It is provided with n+ source region 37 in type well region 36, and is contacted with grid oxygen medium 34 and source electrode 33.Grid 35 is provided in grid oxygen medium 34.
Further, lower surface is arranged in grid 35 in grid oxygen medium 34.Upper table is arranged in epitaxial region 32 in P type trap zone 36
Face.Grid oxygen medium 34 is contacted with n+ source region 37 and P type trap zone 36.Grid 35 to the upper surface of epitaxial region 32, n+ source region 37 it is upper
Surface and the upper surface of P type trap zone 36 are equidistant.Wherein, substrate (31) is that silicon carbide n+ mixes.Epitaxial region (32) is carbon
SiClx n- mixes.P type trap zone (36) is that silicon carbide p mixes.N+ source region (37) is that silicon carbide n+ mixes.Source electrode (33) and n source region
It (38) is Schottky contacts.
As shown in Fig. 2, after silicon carbide MOSFET device access circuit disclosed in the present application, according to formula:
JDb=(Vpn-Vk)/Rsub
JDbFor the electric current inside silicon carbide MOSFET device, VpnFor the voltage of the pn-junction inside silicon carbide MOSFET device,
VkFor the voltage between the drain electrode and source electrode of SBD device, RsubFor the resistance substrate of silicon carbide MOSFET device, V in another Fig. 1SDb
For the voltage for being added to silicon carbide MOSFET device.Under freewheeling state, the forward saturation voltage drop of SiC SBD is in total current range
The parasitic body diode of internal ratio SiC MOSFET wants low, it may be assumed that
VSDb〉Vpn
Higher SBD electric current may be implemented, SiC SBD is embedded in SiC MOSFET chip, the gross area is single SiC
1.05 times of MOSFET chip area.The SiC SBD of SiC MOSFET chip top is integrated in using vertical structure cell, continuous
Whole reverse currents are carried when stream, while making the parasitic body diode of SiC MOSFET chip without flow through electric current, to eliminate double
Polarity degradation effect.
By testing SiC MOSFET power device disclosed in the present application, the device is in synchronous rectification or asynchronous rectification
Under state, all linear feature.No matter in MOSFET on state, or in diode current flow state, full SiC MOSFET function
Rate module all shows the characteristic of unipolar device.After high-temperature process, reverse recovery charge increases seldom with respect to room temperature.
As static characteristic, which shows the characteristic of unipolar device in dynamic characteristic.By right
Waveform is opened than traditional full SiC MOSFET power module and SiC MOSFET power module disclosed in the present application, is found in room
Under temperature, the two waveform very close to, but at 175 DEG C, the full SiC MOSFET power module reverse recovery current of tradition is bigger,
VDS decrease speed is slower, and SiC MOSFET power device disclosed in the present application because reverse recovery current it is small, VDS
Decrease speed is faster.These characteristics show that the turn-on consumption of the two and reverse recovery loss are very close at room temperature simultaneously, but
It is that at high temperature, the turn-on consumption and reverse recovery loss of SiC MOSFET power module disclosed in the present application are relatively smaller, it is main
It wants the reason is that the parasitic body diode of SiC MOSFET power module disclosed in the present application is not turned on when Reverse recovery.
In conclusion the full SiC MOSFET power device of 6.5kV disclosed in the present application uses SiC SBD and SiC MOSFET
Integrated chip design, reduces module volume, is tested by static test and dynamic, it is thus identified that 6.5kV disclosed in the present application
No matter full SiC MOSFET power module when SiC MOSFET conducting or SiC SBD are connected all shows unipolar device
Characteristic, and reverse recovery current is small at high temperature by its SiC SBD, does not have bipolarity degradation effect.Under the conditions of voltage stress, device
The threshold voltage stability of part is stronger, and threshold voltage shift is within 0.1V.SiC MOSFET power module disclosed in the present application
Under the application operating condition such as high temperature, high frequency advantageously.
Use above specific case is illustrated the present invention, is merely used to help understand the present invention, not to limit
The system present invention.For those skilled in the art, according to the thought of the present invention, can also make several simple
It deduces, deform or replaces.
Claims (10)
1. a kind of silicon carbide MOSFET device, which is characterized in that including drain electrode (30), substrate (31), epitaxial region (32), p-type trap
Area (36), n+ source region (37), grid (35), grid oxygen medium (34), source electrode (33) and n source region (38)；It stacks gradually from the bottom up
It is provided with drain electrode (30), substrate (31) and epitaxial region (32)；Source electrode (33) passes through grid oxygen medium (34), P type trap zone (36) and the source n
Area (38) is isolated with epitaxial region (32)；Grid oxygen medium (34) is contacted with P type trap zone (36), and P type trap zone (36) and n source region (38) connect
Touching；It is provided with n+ source region (37) in P type trap zone (36), and is contacted with grid oxygen medium (34) and source electrode (33)；Grid oxygen medium (34)
Inside it is provided with grid (35).
2. device as described in claim 1, which is characterized in that grid oxygen medium (34) is arranged in grid (35) interior lower surface.
3. device as claimed in claim 2, which is characterized in that P type trap zone (36) is arranged in epitaxial region (32) interior upper surface.
4. device as claimed in claim 3, which is characterized in that grid oxygen medium (34) and n+ source region (37) and P type trap zone (36)
Contact.
5. device as claimed in claim 4, which is characterized in that the upper surface of grid (35) to epitaxial region (32), n+ source region
(37) upper surface of upper surface and P type trap zone (36) is equidistant.
6. device as described in claim 1, which is characterized in that substrate (31) is that silicon carbide n+ mixes.
7. device as described in claim 1, which is characterized in that epitaxial region (32) are that silicon carbide n- mixes.
8. device as described in claim 1, which is characterized in that P type trap zone (36) is that silicon carbide p mixes.
9. device as described in claim 1, which is characterized in that n+ source region (37) is that silicon carbide n+ mixes.
10. device as described in claim 1, which is characterized in that source electrode (33) and n source region (38) are Schottky contacts.
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| CN201811495352.3A CN109742146A (en) | 2018-12-07 | 2018-12-07 | A kind of silicon carbide MOSFET device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035955A (en) * | 2021-02-25 | 2021-06-25 | 厦门市三安集成电路有限公司 | Silicon carbide MOSFET device integrated with Schottky diode and preparation method thereof |
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| US20150084066A1 (en) * | 2013-09-20 | 2015-03-26 | Monolith Semiconductor Inc. | High voltage mosfet devices and methods of making the devices |
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2018
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150084119A1 (en) * | 2013-09-20 | 2015-03-26 | Cree, Inc. | Layout configurations for integrating schottky contacts into a power transistor device |
| US20150084066A1 (en) * | 2013-09-20 | 2015-03-26 | Monolith Semiconductor Inc. | High voltage mosfet devices and methods of making the devices |
Non-Patent Citations (1)
| Title |
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| KOUTAROU KAWAHARA,ETAL: "6.5kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module", 《PROCEEDINGS OF THE 29TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES&ICS》 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113035955A (en) * | 2021-02-25 | 2021-06-25 | 厦门市三安集成电路有限公司 | Silicon carbide MOSFET device integrated with Schottky diode and preparation method thereof |
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