CN205508828U - Sensor and electronic equipment - Google Patents
Sensor and electronic equipment Download PDFInfo
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- CN205508828U CN205508828U CN201620320460.7U CN201620320460U CN205508828U CN 205508828 U CN205508828 U CN 205508828U CN 201620320460 U CN201620320460 U CN 201620320460U CN 205508828 U CN205508828 U CN 205508828U
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Abstract
The utility model provides a sensor and electronic equipment, this sensor of includes: the substrate base plate, thin film transistor sets up on the substrate base plate, thin film transistor includes the source electrode, the first insulation layer sets up thin film transistor is last, be provided with in the first insulation layer and run through the first via hole on first insulation layer, the conducting layer, set up in in the first via hole and the part on the first insulation layer and pass through first via hole with the source electrode electricity is connected, the bias voltage electrode, set up in on the first insulation layer and with the conducting layer separation, the sensing active layer, respectively with the conducting layer with the bias voltage electrode is connected, and supplementary conducting layer, set up in on the conducting layer. This sensor sets up supplementary conducting layer on the conducting layer under the condition that does not increase the process, improved the ability of switching on, guarantees the regular transmission of signal.
Description
Technical field
Embodiment of the disclosure and relate to a kind of sensor and electronic equipment.
Background technology
Photoelectric sensor has that precision is high, reaction is fast, noncontact, advantages of simple structure and simple, it is applied widely in detection with in controlling.Such as, photoelectric sensor can be applicable to the aspects such as flue dust monitor, barcode scanner, production counter, photoelectric smoke fog siren.
Photoelectric sensor includes thin film transistor (TFT) and photodiode, and photodiode receives light and converts optical signal into the signal of telecommunication, is controlled the reading of the signal of telecommunication by thin film transistor (TFT).
Utility model content
A kind of sensor of offer is provided, including: underlay substrate；Thin film transistor (TFT), is arranged on described underlay substrate, and described thin film transistor (TFT) includes source electrode；First insulating barrier, is arranged on described thin film transistor (TFT), is provided through the first via of described first insulating barrier in described first insulating barrier；Conductive layer, be arranged in described first via and described first insulating barrier of part on and pass through described first via electrically connect with described source electrode；Bias electrode, be arranged on described first insulating barrier and with described conductive layers apart；Sensing active layer, is connected with described conductive layer and described bias electrode respectively；And auxiliary conductive layer, it is arranged on described conductive layer.
Such as, in the sensor that disclosure embodiment provides, described auxiliary conductive layer is separated with described sensing active layer.
Such as, in the sensor that disclosure embodiment provides, described auxiliary conductive layer is metal conductive oxide layer.
Such as, in the sensor that disclosure embodiment provides, described auxiliary conductive layer is tin indium oxide (ITO) layer or indium zinc oxide (IZO) layer.
Such as, in the sensor that disclosure embodiment provides, described auxiliary conductive layer directly contacts with described conductive layer.
Such as, in the sensor that disclosure embodiment provides, described sensing active layer is provided with the second insulating barrier.
Such as, in the sensor that disclosure embodiment provides, described conductive layer is metal conducting layer.
Such as, in the sensor that disclosure embodiment provides, the thickness of described conductive layer is that 10 nanometers are to 100 nanometers.
Such as, the sensor that disclosure embodiment provides, also include passivation layer, described passivation layer is provided with the second via, wherein, on the direction being perpendicular to described underlay substrate, described passivation layer is arranged between described source electrode and described first insulating barrier, described second via runs through described passivation layer and connects with described first via, and described conductive layer is electrically connected with described source electrode by described first via and described second via.
Such as, in the sensor that disclosure embodiment provides, the maximum diameter of hole of described second via is less than the minimum-value aperture of described first via.
Such as, the sensor that disclosure embodiment provides, also include shielding metal level, described shielding metal level is provided with the 3rd via, wherein, described shielding metal level is arranged between described passivation layer and described first insulating barrier, and described 3rd via runs through described shielding metal level and connects with described first via and described second via, and described conductive layer is electrically connected with described source electrode by described first via, described second via and described 3rd via.
Such as, in the sensor that disclosure embodiment provides, the projection on described underlay substrate of the described shielding metal level at least partly overlaps with the projection on described underlay substrate of the active layer of described thin film transistor (TFT).
Such as, in the sensor that disclosure embodiment provides, the maximum diameter of hole of described 3rd via is less than the minimum-value aperture of described first via, and the minimum-value aperture of described 3rd via is more than the maximum diameter of hole of described second via.
Such as, in the sensor that disclosure embodiment provides, described conductive layer is arranged on the sidewall of the first via, the second via and the 3rd via, and the part being located at least in described sidewall of described conductive layer is completely covered by described auxiliary conductive layer.
Such as, in the sensor that disclosure embodiment provides, the thickness of described first insulating barrier is 1 micron to 4 microns.
Embodiment of the disclosure and also provide for a kind of electronic equipment, including the sensor described in disclosure any one of embodiment.
The sensor that disclosure embodiment provides, in the case of not increasing operation, arranges auxiliary conductive layer on relatively thin conductive layer, improves ducting capacity, it is ensured that the normal transmission of signal.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of disclosure embodiment, the accompanying drawing of embodiment will be briefly described below, it should be apparent that, the accompanying drawing in describing below merely relates to some embodiments of the disclosure, rather than restriction of this disclosure.
The sectional view of a kind of sensor that Fig. 1 provides for disclosure embodiment；
The sectional view of part-structure in a kind of sensor that Fig. 2 provides for disclosure embodiment；
The flow chart of the manufacture method of a kind of sensor that Fig. 3 provides for disclosure embodiment；And
The schematic diagram of the manufacture method of a kind of sensor that Fig. 4 A-4L provides for disclosure embodiment.
Reference
100-sensor；101-underlay substrate；102-thin film transistor (TFT)；1021-grid；1022-gate insulation layer；1023-active layer；1024-drains；1025-source electrode；1031-conductive layer；1032-bias electrode；1033-senses active layer；1034-auxiliary conductive layer；1035-spacer insulator layer；1036-the second insulating barrier；104-passivation layer；105-shields metal level；106-the first insulating barrier；1071-the first via；1072-the second via；1073-the 3rd via；The minimum-value aperture of L1-the first via；The maximum diameter of hole of L2-the second via；The maximum diameter of hole of L3-the 3rd via；The minimum-value aperture of L4-the 3rd via；F1-first step；F2-second step.
Detailed description of the invention
For making the purpose of disclosure embodiment, technical scheme and advantage clearer, below in conjunction with the accompanying drawing of disclosure embodiment, the technical scheme of disclosure embodiment is clearly and completely described.Obviously, described embodiment is a part of this disclosure embodiment rather than whole embodiments.Embodiment of the disclosure based on described, the every other embodiment that those of ordinary skill in the art are obtained on the premise of without creative work, broadly fall into the scope of disclosure protection.
Unless otherwise defined, the disclosure use technical term or scientific terminology should be disclosure art in there is the ordinary meaning that the personage of general technical ability is understood." first ", " second " and the similar word that use in the disclosure are not offered as any order, quantity or importance, and are used only to distinguish different ingredients." include " etc. that similar word means to occur that the element before this word or object are contained and occurs in the element of this word presented hereinafter or object and equivalent thereof, and be not excluded for other elements or object.The similar word such as " connect " and be not limited to physics or machinery connection, but electrical connection can be included, no matter be direct or indirectly.On " ", D score etc. be only used for representing relative position relation, after the absolute position being described object changes, then this relative position relation is likely to correspondingly change.
In the related, sensor, in order to obtain more preferable signal to noise ratio, is usually provided with thicker insulating barrier, and transmit the conductive layer of signal in order to reduce may electric leakage area, reduce leakage current, reduce noise, its thickness is the most relatively thin.Insulating barrier is when baking molding because of Material shrinkage, and the gradient of its sidewall becomes big, and the conductive layer being arranged in insulating layer sidewalls easily ruptures because the gradient is relatively big, the problem producing poor flow.
The sensor of disclosure embodiment offer and manufacture method thereof, in the case of not increasing operation, arrange auxiliary conductive layer on relatively thin conductive layer, improve ducting capacity, it is ensured that the normal transmission of signal.
The sectional view of a kind of sensor that Fig. 1 provides for disclosure embodiment, as it is shown in figure 1, embodiment of the disclosure a kind of sensor 100 of offer, including: underlay substrate 101；Thin film transistor (TFT) 102, is arranged on underlay substrate 101, and thin film transistor (TFT) 102 includes source electrode 1025, drain electrode 1024, active layer 1023, grid 1021 and gate insulation layer 1022；First insulating barrier 106, is arranged on thin film transistor (TFT) 102, is provided through the first via 1071 of the first insulating barrier 106 in the first insulating barrier 106；Bias electrode 1032, is arranged on the first insulating barrier 106 and separates with conductive layer 1031；Sensing active layer 1033, is connected with conductive layer 1031 and bias electrode 1032 respectively；And auxiliary conductive layer 1034, it is arranged on conductive layer 1031.
Such as, sensor 100 can also include passivation layer 104, is provided with the second via 1072, in passivation layer 104 on the direction being perpendicular to underlay substrate, passivation layer 104 is arranged between source electrode 1025 and the first insulating barrier 106, and the second via 1072 runs through passivation layer 104 and connects with the first via 1071.
Such as, sensor 100 can also include shielding metal level 105, shielding metal level 105 is provided with the 3rd via 1073, shielding metal level 105 is arranged between passivation layer 104 and the first insulating barrier 106,3rd via 1073 runs through shielding metal level 105 and connects with the first via 1071 and the second via 1072, and conductive layer 1031 is electrically connected with source electrode 1025 by first via the 1071, second via 1072 and the 3rd via 1073.
Such as, bias electrode 1032 separates with conductive layer 1031 and refers to that bias electrode 1032 the most directly contacts with conductive layer 1031.Such as, in the sensor 100 that disclosure embodiment provides, spacer insulator layer 1035 between conductive layer 1031 and bias electrode 1032, it is provided with.The most such as, sensing active layer 1033 it is provided with between conductive layer 1031 and bias electrode 1032.In some instances, it is also possible to be not provided with spacer insulator layer 1035, the material for forming sensing active layer 1033 is filled between conductive layer 1031 and bias electrode 1032.
Such as, bias electrode 1032 is applied in high voltage, high-tension scope for example, 100 volts to 300 volts, the most such as, and high-tension scope for example, 150 volts to 200 volts.Such as, the material of bias electrode 1032 can be the conducting metals such as molybdenum, aluminum, copper or the alloy formed by they combination in any；The material of bias electrode 1032 can also be the conductive materials such as ITO, AZO, IZO, electroconductive resin, graphene film, carbon nano-tube film.
For example, it is also possible to be to arrange sensing active layer 1033 on conductive layer 1031, sensing active layer 1033 arranges bias electrode 1032.Now, in order to ensure that sensing active layer 1033 can accept illumination, this bias electrode 1032 should be transparent conductive material, such as, ITO, IZO, AZO, electroconductive resin, graphene film, carbon nano-tube film etc..
Such as, sensing active layer 1033 is amorphous silicon semiconductor layer.
Such as, shielding metal level 105 can play the effect of shielding, prevents from shielding the mutual crosstalk of metal level 105 both sides electric field.Such as, the faradic current that shielding metal level 105 can produce on drain electrode 1024, source electrode 1025 and the data wire being connected with drain electrode 1024 with the electric field in screening conductive layer 1031, improves signal to noise ratio.
Such as, shielding metal level 105 can be made up of multiple parts separated from one another, and partly shielding effect metal level can be applied in burning voltage and improve shield effectiveness.
Such as, in the sensor 100 that disclosure embodiment provides, the projection on underlay substrate 101 of the active layer 1023 of the shielding metal level 105 projection on underlay substrate 101 and thin film transistor (TFT) 102 at least partly overlaps.Owing to light note affects the switching characteristic of thin film transistor (TFT), so needing active layer 1023 shading to thin film transistor (TFT), the projection on underlay substrate 101 of the shielding metal level 105 projection on underlay substrate 101 and the active layer 1023 of thin film transistor (TFT) 102 is at least partly overlapping to be arranged, shielding metal level 105 can be active layer 1023 shading of thin film transistor (TFT) 102, prevents the ambient impact on thin film transistor (TFT).
Such as, in the sensor 100 that disclosure embodiment provides, auxiliary conductive layer 1034 is separated with sensing active layer 1033.I.e. auxiliary conductive layer 1034 the most directly contacts with sensing active layer 1033, in order to avoid producing electric leakage noise.
Such as, in the sensor 100 that disclosure embodiment provides, auxiliary conductive layer 1034 is metal conductive oxide layer.
Such as, in the sensor 100 that disclosure embodiment provides, auxiliary conductive layer 1034 is tin indium oxide (ITO) layer or indium zinc oxide (IZO) layer.Such as, auxiliary conductive layer 1034 directly contacts with conductive layer 1031.
Such as, when conductive layer 1031 ruptures, auxiliary conductive layer 1034 can be with the conducting of auxiliary conductive layer 1031, to ensure the normal transmission of signal.
Such as; not oxidized for ensureing the lead-in wire electrode of surrounding zone; need on peripheral electrode, arrange antioxidation conductive protecting layer; auxiliary conductive layer 1034 and antioxidation conductive protecting layer can utilize commaterial (such as ITO) to be formed with layer, so arranging auxiliary 1034 on conductive layer 1031 do not have more extra operation.Such as; data wire in sensor is connected by lead-in wire electrode with integrated circuit (IC); need to arrange oxidation resistant protective layer on this lead-in wire electrode; to prevent this lead-in wire electrode oxidized; auxiliary conductive layer 1034 and this antioxidation conductive protecting layer can be formed with layer by commaterial (such as ITO), so need not increase extra operation.
Such as, in the sensor 100 that disclosure embodiment provides, sensing active layer 1033 is provided with the second insulating barrier 1036.Second insulating barrier 1036 can play the effect of protection sensing active layer.
Such as, in the sensor 100 that disclosure embodiment provides, conductive layer 1031 is metal conducting layer.
Such as, conductive layer 1031 can be made up of any one or its alloy in the metals such as molybdenum, aluminum, copper.
Such as, in the sensor 100 that disclosure embodiment provides, the thickness of conductive layer 1031 is that 10 nanometers are to 100 nanometers.The most such as, the thickness of conductive layer 1031 is that 30 nanometers are to 70 nanometers.
Such as, the first insulating barrier 106, spacer insulator layer the 1035, second insulating barrier 1036 can be organic insulators, such as organic resin etc.；Can also be inorganic insulation layer, such as silicon nitride, silicon oxide etc..
Such as, in the sensor 100 that disclosure embodiment provides, the thickness of the first insulating barrier 106 is 1 micron to 4 microns.The most such as, the thickness of the first insulating barrier 106 is 2 microns to 3 microns.The voltage being applied in due to bias electrode 1032 is higher, arranges the first thicker insulating barrier 106 and can reduce the interference to such as thin film transistor (TFT) 102 source electrode 1025 of the electric field of bias electrode 1032.Meanwhile, the insulating barrier of high thickness can also play the effect of planarization, it is simple to the enforcement of subsequent technique.
Such as, the sectional view of part-structure in a kind of sensor that Fig. 2 provides for disclosure embodiment, as shown in Figure 2, in the sensor 100 that disclosure embodiment provides, the maximum diameter of hole L3 of the 3rd via 1073 is more than the maximum diameter of hole L2 of the second via 1072 less than the minimum-value aperture L1, the minimum-value aperture L4 of the 3rd via 1073 of the first via 1071.Thus form first step F1 between passivation layer 104 and shielding metal level 105, between shielding metal level 105 and insulating barrier 106, form second step F2.First step F1, second step F2 make the sidewall of first via the 1071, second via 1072 and the 3rd via 1073 become mild, and the beneficially formation of conductive layer 1031 prevents conductive layer 1031 from rupturing.
Such as, in the sensor 100 that disclosure embodiment provides, conductive layer 1031 is arranged at
On the sidewall of first via the 1071, second via 1072 and the 3rd via 1073, the part being located at least in sidewall of conductive layer 1031 is completely covered by auxiliary conductive layer 1034.
Such as, passivation layer 104 can play the effect of planarization, and makes shielding metal level 105 insulate with thin film transistor (TFT) 102, reduces the interference between the electric field of passivation layer 104 both sides, improves signal to noise ratio.
Such as, underlay substrate 101 for example, glass substrate and quartz base plate.
Such as, sensor 100 can include insulating barrier 106, but not including shielding metal level 105 and passivation layer 104, in this case, conductive layer 1031 is arranged in the first via 1071 and electrically connects with source electrode 1025 on part the first insulating barrier 106 and by the first via 1071.Such as, in this case, conductive layer 1031 is arranged on the sidewall of the first via 1071, and the part being located at least in sidewall of conductive layer 1031 is completely covered by auxiliary conductive layer 1034.
Such as, sensor 100 can include insulating barrier 106 and passivation layer 104, but do not include shielding metal level 105, now, electrically connect with source electrode 1025 during conductive layer 1031 is arranged at the first via 1071, in the second via 1072 and on part the first insulating barrier 106 and by the first via 1071 and the second via 1072.Such as, in this case, the maximum diameter of hole L2 of the second via 1072 is less than the minimum-value aperture L1 of the first via 1071.Conductive layer 1031 is arranged on the sidewall of the first via 1071 and the second via 1072, and the part being located at least in sidewall of conductive layer 1031 is completely covered by auxiliary conductive layer 1034.
The sensor for example, photoelectric sensor that disclosure embodiment provides, but it is not limited only to photoelectric sensor, it is possible to for the sensor of other utilization current transmission signal.
Embodiment of the disclosure and also provide for a kind of electronic equipment, including the sensor of disclosure any one of embodiment.
Embodiment of the disclosure the manufacture method also providing for a kind of sensor, including: forming thin film transistor (TFT) on underlay substrate, thin film transistor (TFT) includes source electrode；Thin film transistor (TFT) is formed the first insulating barrier, the first insulating barrier is provided with the first via；Forming conductive layer in the first via and on part the first insulating barrier, conductive layer is electrically connected with source electrode by the first via；Forming the bias electrode being separated with conductive layer and sensing active layer on the insulating layer, sensing active layer is connected with conductive layer and bias electrode respectively；And form auxiliary conductive layer on the electrically conductive.
Such as, the manufacture method of the sensor that disclosure embodiment provides, also include, between conductive layer and bias electrode, form spacer insulator layer.
Such as, the manufacture method of the sensor that disclosure embodiment provides, also include, sensing active layer forms the second insulating barrier.
Such as, the manufacture method of the sensor that disclosure embodiment provides, also includes, forms passivation layer between source electrode and the first insulating barrier, passivation layer is provided with the second via connected with the first via, forms the conductive layer electrically connected with source electrode by the first via and the second via.
Such as, the manufacture method of the sensor that disclosure embodiment provides, also include, shielding metal level is formed between passivation layer and the first insulating barrier, shielding metal level is provided with the 3rd via connected with the first via and the second via, forms the conductive layer electrically connected with source electrode by the first via, the second via and the 3rd via.
Such as, the flow chart of the manufacture method of a kind of sensor that Fig. 3 provides for disclosure embodiment, the schematic diagram of the manufacture method of a kind of sensor that Fig. 4 A-4L provides for disclosure embodiment.This manufacture method may include steps of:
Step S01: as shown in figs. 4 a-4d, forms thin film transistor (TFT) 102 on underlay substrate 101；Such as include:
Step S011: as shown in Figure 4 A, forms grid 1021 on underlay substrate；
Step S012: as shown in Figure 4 B, forms gate insulation layer 1022 on grid 1021；
Step S013: as shown in Figure 4 C, is formed with active layer 1023 on gate insulation layer 1022；
Step S014: as shown in Figure 4 D, forms source electrode 1025 and drain electrode on active layer 1023.
Step S02: as shown in Figure 4 E, forms passivation layer 104 on thin film transistor (TFT) 102, is provided with the second via 1072 in passivation layer 104；
Step S03: as illustrated in figure 4f, forms shielding metal level 105 on passivation layer 104, is provided with, in shielding metal level 105, the 3rd via 1073 connected with the second via 1072；
Step S04: as shown in Figure 4 G, forms the first insulating barrier 106 on shielding metal level 105, is provided with the first via 1071 connected with the 3rd via 1073 in the first insulating barrier 106；
Step S05: as shown at figure 4h, forming conductive layer 1031 in the first via 1071, in the second via 1072, in the 3rd via 1073 and on part the first insulating barrier 106, conductive layer 1031 is electrically connected with source electrode 1025 by first via the 1071, second via 1072 and the 3rd via 1073；
Step S06: as shown at figure 4h, forms the bias electrode 1032 being separated with conductive layer 1031 on the first insulating barrier 106；
Step S07: as shown in fig. 41, forms spacer insulator layer 1035 between conductive layer 1031 and bias electrode 1032；
Step S08: as shown in fig. 4j, forms sensing active layer 1033, and sensing active layer 1033 is connected with conductive layer 1031 and bias electrode 1032 respectively；
Step S09: as shown in Figure 4 K, forms the second insulating barrier 1036 on sensing active layer 1033；And
Step S10: as illustrated in fig. 4l, forms auxiliary conductive layer 1034 on conductive layer 1031.
Such as; not oxidized for ensureing the lead-in wire electrode of surrounding zone; need on peripheral electrode, arrange antioxidation conductive protecting layer; auxiliary conductive layer 1034 and antioxidation conductive protecting layer can utilize commaterial (such as ITO) to be formed with layer, so arranging auxiliary 1034 on conductive layer 1031 do not have more extra operation.Such as; data wire in sensor is connected by lead-in wire electrode with integrated circuit (IC); need to arrange oxidation resistant protective layer on this lead-in wire electrode; to prevent this lead-in wire electrode oxidized; auxiliary conductive layer 1034 and this antioxidation conductive protecting layer can be formed with layer by commaterial (such as ITO), so need not increase extra operation.
Such as, all include depositing (or sputtering), cleaning in each step, photoresist coats, expose, develop, etch, techniques such as (such as, peeling off) removed by photoresist.
Such as, grid 1025 can be made up of any one metal in Cr, W, Ti, Ta, Mo, Al, Cu or its alloy.
Such as, gate insulation layer 1022 can be made up of SiNx or SiOx.
Such as, active layer 1023 and sensing active layer 1033 can be made up of non-crystalline silicon.
Such as, source electrode 1025 and drain electrode can be by aluminum neodymium (AlNd) alloy, tungsten-molybdenum alloys (WMo), and any one or a combination thereof in aluminum (Al), copper (Cu), molybdenum (Mo) or chromium (Cr) are made.
Such as, passivation layer 104 can be made up of silicon nitride or silicon oxide.
Such as, shielding metal level 105 can be made up of any one metal in molybdenum, aluminum, copper or its alloy.
Such as, the first insulating barrier 106, spacer insulator layer the 1035, second insulating barrier 1036 can be made up of organic resin, silicon nitride or silicon oxide.
Such as, conductive layer 1031 can be made up of any one or its alloy in the metals such as molybdenum, aluminum, copper.
Such as, auxiliary conductive layer 1034 can be made up of tin indium oxide (ITO) or indium zinc oxide (IZO).
Such as, the material of bias electrode 1032 can be the conducting metals such as molybdenum, aluminum, copper or the alloy formed by they combination in any；The material of bias electrode 1032 can also be the conductive materials such as ITO, AZO, IZO, electroconductive resin, graphene film, carbon nano-tube film.
The sensor of disclosure embodiment offer and manufacture method thereof, in the case of not increasing operation, arrange auxiliary conductive layer on relatively thin conductive layer, improve ducting capacity, it is ensured that the normal transmission of signal.
It should be noted that clear for representing, embodiment of the disclosure and accompanying drawing does not provide the entire infrastructure of sensor and electronic equipment.For realizing the necessary function of sensor and electronic equipment, those skilled in the art can be commonly designed arrange other unshowned structures according to concrete application scenarios reference, and the disclosure is without limitation.
The above, the only detailed description of the invention of the disclosure, but the protection domain of the disclosure is not limited thereto, and the protection domain of the disclosure should be as the criterion with described scope of the claims.
Claims (16)
1. a sensor, it is characterised in that including:
Underlay substrate；
Thin film transistor (TFT), is arranged on described underlay substrate, and described thin film transistor (TFT) includes source electrode；
First insulating barrier, is arranged on described thin film transistor (TFT), is provided through in described first insulating barrier
First via of described first insulating barrier；
Conductive layer, is arranged in described first via and on described first insulating barrier of part and pass through described the
One via electrically connects with described source electrode；
Bias electrode, be arranged on described first insulating barrier and with described conductive layers apart；
Sensing active layer, is connected with described conductive layer and described bias electrode respectively；And
Auxiliary conductive layer, is arranged on described conductive layer.
Sensor the most according to claim 1, it is characterised in that described auxiliary conductive layer and institute
State sensing active layer to be separated.
Sensor the most according to claim 1, it is characterised in that described auxiliary conductive layer is gold
Belong to oxide conducting layer.
Sensor the most according to claim 1, it is characterised in that described auxiliary conductive layer is oxygen
Change indium stannum (ITO) layer or indium zinc oxide (IZO) layer.
Sensor the most according to claim 1, it is characterised in that described auxiliary conductive layer and institute
State conductive layer directly to contact.
Sensor the most according to claim 1, it is characterised in that set on described sensing active layer
It is equipped with the second insulating barrier.
7. according to the sensor according to any one of claim 1-6, it is characterised in that described conduction
Layer is metal conducting layer.
8. according to the sensor according to any one of claim 1-6, it is characterised in that described conduction
The thickness of layer is that 10 nanometers are to 100 nanometers.
9. according to the sensor according to any one of claim 1-6, it is characterised in that also include blunt
Change layer, described passivation layer is provided with the second via, wherein, in the direction being perpendicular to described underlay substrate
On, described passivation layer is arranged between described source electrode and described first insulating barrier, and described second via runs through
Described passivation layer also connects with described first via, and described conductive layer is by described first via and described the
Two vias electrically connect with described source electrode.
Sensor the most according to claim 9, it is characterised in that the maximum of described second via
Aperture is less than the minimum-value aperture of described first via.
11. sensors according to claim 9, it is characterised in that also include shielding metal level,
Being provided with the 3rd via in described shielding metal level, wherein, described shielding metal level is arranged at described passivation
Between layer and described first insulating barrier, described 3rd via runs through described shielding metal level and with described first
Via connects with described second via, described conductive layer by described first via, described second via and
Described 3rd via electrically connects with described source electrode.
12. sensors according to claim 11, it is characterised in that described shielding metal level exists
Projection on described underlay substrate and the throwing on described underlay substrate of the active layer of described thin film transistor (TFT)
Shadow at least partly overlaps.
13. sensors according to claim 11, it is characterised in that described 3rd via is
Large aperture is less than the minimum-value aperture of described first via, and the minimum-value aperture of described 3rd via is more than described the
The maximum diameter of hole of two vias.
14. sensors according to claim 11, it is characterised in that described conductive layer at least sets
Putting on the sidewall of the first via, the second via and the 3rd via, being located at least in of described conductive layer is described
The part of sidewall is completely covered by described auxiliary conductive layer.
15. according to the sensor according to any one of claim 1-6, it is characterised in that described first
The thickness of insulating barrier is 1 micron to 4 microns.
16. 1 kinds of electronic equipments, it is characterised in that include according to any one of claim 1-15
Sensor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105789324A (en) * | 2016-04-15 | 2016-07-20 | 京东方科技集团股份有限公司 | Sensor and manufacturing method thereof, electronic equipment |
| WO2017177735A1 (en) * | 2016-04-13 | 2017-10-19 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method therefor, sensor, and detection device |
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2016
- 2016-04-15 CN CN201620320460.7U patent/CN205508828U/en not_active Withdrawn - After Issue
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| CN105789324A (en) * | 2016-04-15 | 2016-07-20 | 京东方科技集团股份有限公司 | Sensor and manufacturing method thereof, electronic equipment |
| WO2017177618A1 (en) * | 2016-04-15 | 2017-10-19 | 京东方科技集团股份有限公司 | Sensor and manufacturing method therefor, and electronic device |
| US10269837B2 (en) | 2016-04-15 | 2019-04-23 | Boe Technology Group Co., Ltd. | Sensor, manufacturing method thereof and electronic device |
| CN105789324B (en) * | 2016-04-15 | 2019-05-03 | 京东方科技集团股份有限公司 | Sensor and its manufacturing method, electronic equipment |
| EP3444847A4 (en) * | 2016-04-15 | 2020-01-15 | Boe Technology Group Co. Ltd. | Sensor and manufacturing method therefor, and electronic device |
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