CN205428365U

CN205428365U - Anti -fogery structure

Info

Publication number: CN205428365U
Application number: CN201520999566.XU
Authority: CN
Inventors: 翟兴
Original assignee: Shenzhen Xingcheng Technology Co Ltd
Current assignee: Shenzhen Xingcheng Technology Co Ltd
Priority date: 2015-12-05
Filing date: 2015-12-05
Publication date: 2016-08-03
Anticipated expiration: 2025-12-05

Abstract

The utility model relates to an antifalsification technology especially relates to an anti -fogery structure, and this anti -fogery structure includes flaky amorphous silica module, and the amorphous silica module has a hollow area, the utility model provides an anti -fogery structure who has many materials, double anti -fake.

Description

A kind of anti-counterfeit structure

Technical field

This utility model relates to anti-counterfeiting technology, particularly relates to a kind of anti-counterfeit structure.

Background technology

In existing skill counterfeit-proof tech, mostly using watermark, colored fibre, fluorescent ink printing, microdot or the body of small mark and random distribution etc. as counterfeit protection measures.

Such as, prior art 1, Chinese patent literature CN102108653A, disclosed a kind of lamellar anti-fake material, described lamellar anti-fake material uses the polymorphic structure beyond square；And described lamellar anti-fake material is made up of following layer structure: the false proof carrier layer of papery, the false proof carrier of wherein said papery is to be compounded by least two fiber to manufacture the paper obtained；And false proof layer.Also disclose the preparation method of described lamellar anti-fake material and the cheque paper containing this lamellar anti-fake material.The lamellar anti-fake material of the present invention can obtain and be provided simultaneously with the multi-level anti-fraud functional cheque paper such as naked eyes identification, the most machine-readable, analysis expert.

For another example, prior art 2, Chinese patent literature CN104610812A, disclosed fluorescence silicon nano particles as the application of anti-fake mark, are prepared fluorescence silicon nano particles by silicon source, the fluorescence silicon nano particles obtained are used as anti-counterfeiting ink to prepare security pattern.Owing to nano silicon particles has good photoluminescent property, quantum yield is high, and storage stability is good, has good excitation wavelength dependency, and the security pattern of preparation can show the light of different colours under the illumination of different excitation wavelengths, can play good antifalse effect.

For another example, prior art 3, Chinese patent literature CN101673341A, disclosed in the present invention relates to anti-counterfeiting technology, particularly relate to a kind of anti-counterfeiting method of micro-points.The method comprises the following steps: (1) provides a kind of microdot；(2) provide a kind of glue, microdot is mixed among glue；(3) the mixed atomarius glue of point on carrier；(4) solidified glue；(5) glue of taking pictures drips, and forms original Contrast's picture；(6) original Contrast's picture is stored in background data base；(7) fake certification glue of taking pictures drips, and is formed by than picture；(8) read background data base original Contrast's picture, and compared than picture, make the true and false and judge；Wherein, the glue of taking pictures described in (5th) step drips, and takes pictures for amplifying；Fake certification described in (7th) step glue of taking pictures drips, and is also to amplify to take pictures.The present invention provides one the most imitability anti-counterfeiting method of micro-points.Corresponding, Chinese patent literature CN102267287A discloses the preparation method of similar a kind of microdot anti-counterfeiting stamp and realizes the device of the method.The preparation method of microdot anti-counterfeiting stamp comprises the following steps: S1, it is provided that a kind of microdot label, it is provided that a kind of ink；S2, mixed ink, will mix homogeneously with ink by microdot label；S3, it is provided that at least two shower nozzles, it is provided that object；S4, injection, by shower nozzle, the ink being mixed with microdot label is sprayed to subject matter；S5, is dried the ink being mixed with microdot label；In course of injection, mixed ink step is carried out continuously, mixes ink, completes in totally enclosed fluid path to shower nozzle ink supply, injection.The present invention provides and is difficult in a kind of course of processing be mixed into the preparation method of impurity, in real time the microdot anti-counterfeiting stamp that holding microdot is evenly distributed in ink and realize the device of the method.

For another example, prior art 4, Chinese patent literature CN1350274A, disclosed a kind of anti-fake mark containing most small marks or pattern and forming method thereof, with the anti-fake mark containing most micro pattern marks, reach and identify article genuine-fake and prevent the application forged.Object qualification method is according at least one unique tag formed in object, it contains most micro pattern or mark, and together in labelling in the way of random combine, with as a comparison, identify method, and have prevent other people from forging and can be easily achievable identify and identify and contrast effect.

But, the most listed above, the composite fibre of prior art, fluorescence silicon nano particles, microdot or the body of small mark and random distribution etc. are as counterfeit protection measures, it it is not the effect being possible to prevent other people to forge as disclosure describes, progress along with science and technology, these technological means all can inexpensively be copied, that can not copy only has the background data base described in prior art 3, but back-end data is the most dangerous, the data base of enterprise is easily subject to assault, and need communication security guarantee, the most undesirable.Prior art 3 and prior art 4, solve most of false proof demand that can solve in fact, but be all that the anti-fake material that single material is constituted easily is imitated, and unified gray tone does not has stereovision and third dimension, high demand still can not be met, thus, need constantly to weed out the old and bring forth the new, constantly improve.

Utility model content

A kind of anti-counterfeit structure with many materials is provided in place of the purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art.

The purpose of this utility model also resides in provides a kind of anti-counterfeit structure with visible ray and ultraviolet light double anti-forge in place of overcoming above-mentioned the deficiencies in the prior art.

The purpose of this utility model can be achieved through the following technical solutions:

A kind of anti-counterfeit structure, it is characterised in that: this anti-counterfeit structure includes the amorphous silicon module of lamellar, and amorphous silicon module has void region, and this anti-counterfeit structure also includes that Ultraluminescence module, Ultraluminescence module are embedded in described void region.

Described anti-counterfeit structure, it is characterized in that: described Ultraluminescence module, refer in unit anti-counterfeit structure, the summation being made up of Ultraluminescence submodule, Discrete Distribution between each submodule, described Ultraluminescence module can be a figure or character, it is also possible to is formed a block graphics or character string by a most submodule；Described amorphous silicon module, refer in unit anti-counterfeit structure, the summation being made up of amorphous silicon submodule, Discrete Distribution between each submodule, described amorphous silicon module can be a figure or character, it is also possible to is formed a block graphics or character string by a most submodule.

Described anti-counterfeit structure, it is characterised in that: described Ultraluminescence module bottom surface is in the same plane with amorphous silicon module bottom surface, described Ultraluminescence module and amorphous silicon module consistency of thickness.

Described anti-counterfeit structure, it is characterised in that: described Ultraluminescence module bottom surface is in the same plane with amorphous silicon module bottom surface, and described Ultraluminescence module is bigger than amorphous silicon module thickness.

Described anti-counterfeit structure, it is characterised in that: described Ultraluminescence module is the uniform curing structure among light binding of ultraviolet fluorescence powder；Described Ultraluminescence structure is the homogeneous mixture of ultraviolet fluorescence powder and light binding.Ultraviolet fluorescence powder is to be coordinated with trace active agent from metal (zinc, cadmium) sulfide or rare earth oxide, forms through calcining.

Described anti-counterfeit structure, it is characterised in that: under visible light, Ultraluminescence module is arranged to colourless or white, under ultraviolet light irradiates, Ultraluminescence module is colored, and face and different Ultraluminescence module submodules can be arranged to different colors, and amorphous silicon module is arranged to black；And under visible light, Ultraluminescence module constitutes black and white or the first anti-counterfeiting information of ater with amorphous silicon module；Under ultraviolet light irradiates, Ultraluminescence module and amorphous silicon module constitute colored the second anti-counterfeiting information reflected mutually with black background.

Described anti-counterfeit structure, it is characterised in that: between the thickness of described laminated structure is 2 to 10 microns.

Anti-counterfeit structure involved by this utility model includes the amorphous silicon module of lamellar, this anti-counterfeit structure includes the amorphous silicon module of lamellar, amorphous silicon module has void region, and this anti-counterfeit structure also includes that Ultraluminescence module, Ultraluminescence module are embedded in described void region；Under visible light, Ultraluminescence module is arranged to colourless or white, and under ultraviolet light irradiates, Ultraluminescence module is colored, and face and different Ultraluminescence module submodules can be arranged to different colors, and amorphous silicon module is arranged to black；And under visible light, Ultraluminescence module constitutes black and white or the first anti-counterfeiting information of ater with amorphous silicon module；Under ultraviolet light irradiates, Ultraluminescence module and amorphous silicon module constitute colored the second anti-counterfeiting information reflected mutually with black background；There is various material, and under visible ray with ultraviolet light, there is double anti-forge information, bigger than prior art difficulty in its technique, it is difficult to copy, excellent its is that Ultraluminescence component form distributed data cannot reversely copy number from ultramicroscope, relatively prior art safety.

Accompanying drawing explanation

Fig. 1 is the front schematic view of first and second embodiment of this utility model.

Fig. 2 be first embodiment of this utility model Fig. 1 in A-A generalized section.

Fig. 3 be second embodiment of this utility model Fig. 1 in A-A generalized section.

Fig. 4 is the schematic diagram of S110 to the S150 step of the 3rd and the 4th embodiment of this utility model.

Fig. 5 is the schematic diagram of S160 to the S180 step of the 3rd and the 4th embodiment of this utility model.

Fig. 6 is the schematic diagram of the S190 step of the 3rd and the 4th embodiment of this utility model.

Fig. 7 is the schematic diagram of the S200 step of the 3rd and the 4th embodiment of this utility model.

Fig. 8 is the schematic diagram of the S210 step of the 3rd and the 4th embodiment of this utility model.

Fig. 9 is the schematic diagram of the S215 step of the 3rd embodiment of this utility model.

Figure 10 is the schematic diagram of S220 to the S240 step of the 3rd embodiment of this utility model.

Figure 11 is enlarged diagram at P in Figure 10 and Figure 12.

Figure 12 is the schematic diagram of S220 to the S240 step of the 4th embodiment of this utility model.

Figure 13 is the schematic diagram of the S250 step of the 3rd and the 4th embodiment of this utility model.

Figure 14 is the flow chart of this utility model the 3rd embodiment.

Detailed description of the invention

Below in conjunction with accompanying drawing, the utility model is described in further detail.

With reference to Fig. 1, Fig. 2, Fig. 2 is A-A face profile in Fig. 1, first embodiment of this utility model is a kind of anti-counterfeit structure, this anti-counterfeit structure includes the amorphous silicon module 001 of lamellar, amorphous silicon mould 001 piece has void region, this anti-counterfeit structure also includes that Ultraluminescence module 002, Ultraluminescence module 002 are embedded in described void region, and Ultraluminescence module in the present embodiment 002 completely fills described void region.

Described Ultraluminescence module 002, refer in unit anti-counterfeit structure 000, the summation being made up of each Ultraluminescence submodule, Discrete Distribution between each submodule, described Ultraluminescence module 002 can be a figure or character, it is also possible to is formed a block graphics or character string, in the present embodiment by a most submodule, Ultraluminescence module 002 is one group of character string " Red ", is made up of the three of Discrete Distribution submodules " R ", " e ", " d "；Described amorphous silicon module 001, refer in unit anti-counterfeit structure, the summation being made up of each amorphous silicon submodule, Discrete Distribution between each submodule, described amorphous silicon module can be a figure or character, a block graphics or character string can also be formed by a most submodule, in the present embodiment, amorphous silicon module 001 is made up of four Discrete Distribution submodules, i.e. the enclosure portion on character " R " top, the enclosure portion on character " e " top, character " d " lower closed portion, also character string " Red " part around；Unit anti-counterfeit structure 000 refers to an anti-counterfeit structure in the present embodiment.

Referring again to Fig. 2, in the present embodiment, described Ultraluminescence module 002 bottom surface is in the same plane with amorphous silicon module 001 bottom surface, described Ultraluminescence module 002 and amorphous silicon module 001 consistency of thickness.

Described Ultraluminescence module 002 is the uniform curing structure among light binding of ultraviolet fluorescence powder；Described Ultraluminescence structure is the homogeneous mixture of ultraviolet fluorescence powder and light binding.Ultraviolet fluorescence powder is to be coordinated with trace active agent from metal (zinc, cadmium) sulfide or rare earth oxide, forms through calcining.

Under visible light, Ultraluminescence module 002 is arranged to white, under ultraviolet light irradiates, Ultraluminescence module 002 is colored, and face and different Ultraluminescence module submodules can be arranged to different colors, in the present embodiment, character string " Red " be same color and, it is to be understood that, it is also possible to be different color, the 3rd embodiment illustrates the preparation means of different color submodule；Amorphous silicon module 001 is arranged to black；And under visible light, Ultraluminescence module constitutes the first anti-counterfeiting information of black and white with amorphous silicon module；Under ultraviolet light irradiates, Ultraluminescence module and amorphous silicon module constitute colored the second anti-counterfeiting information reflected mutually with black background.

With reference to Fig. 1, Fig. 3, Fig. 3 is A-A face profile in Fig. 1, second embodiment of this utility model is a kind of anti-counterfeit structure, it is with the difference of first embodiment of this utility model, described Ultraluminescence module 002 bottom surface is in the same plane with amorphous silicon module 001 bottom surface, described Ultraluminescence module 002 is bigger than amorphous silicon module 001 thickness, and under the present embodiment visible ray, stereoeffect is strengthened.

With reference to Fig. 4 to Figure 11, Figure 13 to Figure 14, the 3rd embodiment of this utility model is the preparation method of a kind of anti-counterfeit structure, i.e. preparing the preparation method of anti-counterfeit structure described by first embodiment of this utility model, the method comprises the following steps: S110, it is provided that substrate of glass；S120, on the glass substrate face plating adhesive layer；S130, plates sacrifice layer on adhesive layer；S140, plates amorphous si-layer on sacrifice layer；S150, at amorphous si-layer coated thereon light binding；S160, it is provided that ultraviolet light source, it is provided that first floods template, the light binding coating exposure that S150 step is coated with；S170, it is provided that developer solution, development；S180, it is provided that pure water, cleans；S190, it is provided that plasma etching is equipped, etching does not has the neighboring area outside the amorphous si-layer that light binding is protected, i.e. void region and each unit anti-counterfeit structure；S200, it is provided that cleanout fluid, cleans, it is simply that wash for protecting the light binding without determining silicon layer；S210, at amorphous silicon surface coated UV fluorescent material and the mixture of light binding；S215 step, frictioning；S220, it is provided that second floods template, the mixture coating exposure that S200 step is coated with；S230, development；S240, cleans with pure water；S250, it is provided that sacrificial layer etching liquid, etching sacrificial layer；S260, it is provided that clean and filter equipment and pure water, cleans, and filters；Wherein, S120 step, described adhesive layer is Cr or Ni or rustless steel, and described plating refers to Vacuum Deposition；S130 step, described sacrifice layer is Al or Cu, and described plating refers to Vacuum Deposition；S170 step, described offer developer solution, developer solution is that tetramethyl adds water；Described development, with developer solution cured portion light binding；S180 step, cleans, washes S170 development step uncured portion light binding with pure water.

Described S150 step, also includes that offer is coated with equipment step, with being coated with method coating.Described S210 step, also includes providing painting equipment step, is coated with spraying method.Described S215 step, frictioning, also include providing frictioning equipment, the mixture that the S210 step on amorphous silicon surface sprays is scraped off.Frictioning equipment can be with outsourcing；Can also SMT tin scraping machine frictioning, do not fill during work and under silk screen, feeding track, scrap rubber retracting device is set can complete.

Described light binding can select positive light binding and negative light binding one therein, the cured portion light binding that described S170 step is mentioned refers to, exposure or unexposed part light binding, specifically, the part light binding exposed for positive light binding does not solidifies, and unexposed part light binding solidifies；Accordingly, the part light binding solidification exposed for negative light binding, unexposed part light binding does not solidifies.

Described S110 provides substrate of glass, also includes sheet glass square-cut or rectangle, and chamfering, polish, clean, drying steps, for the thickness of substrate of glass between 0.3 to 0.5 millimeter.

Thering is provided cleanout fluid described in described S200 step, cleanout fluid is acetone.

Described S190 step etching amorphous si-layer, gases used is CF6, naturally it is also possible to increase auxiliary gas.

Described S250 step, it is provided that sacrificial layer etching liquid, if the sacrifice layer plated for S130 step is Al, it is provided that etching solution is the one in hydrochloric acid, sodium hydroxide；If the sacrifice layer plated for S130 step is Cu, it is provided that etching solution is the aqueous solution of hydrochloric acid and ferric chloride.

Refer again to Fig. 4, it it is the schematic diagram of S110 to the S150 step of the present embodiment, adhesive layer 102 is plated on substrate of glass 101, sacrifice layer 103 is plated on adhesive layer 102, amorphous si-layer 104 is plated on sacrifice layer 103, at amorphous si-layer 104 coated thereon light binding 105, become the first semi-finished product 100 and process for next step；Refer again to Fig. 5; it it is the schematic diagram of S160 to the S180 step of the present embodiment; there is provided ultraviolet light source 999, it is provided that first floods template 901, the light binding coating of the first semi-finished product 100 is exposed; developer solution is provided; development, it is provided that pure water, cleans; the light binding 105 of the first semi-finished product 100 leaves behind the light binding 201 having cured by the part of protection amorphous si-layer 104, becomes the second semi-finished product 200 and processes for next step；Refer again to Fig. 6; it it is the schematic diagram of the S190 step of the present embodiment; S190; offer plasma etching is equipped; etching does not has the amorphous si-layer that light binding is protected; i.e. etch away the neighboring area outside void region 301 and each unit anti-counterfeit structure, exposed portion sacrifice layer 103, become the 3rd semi-finished product 300 and process for next step；Refer again to Fig. 7; it it is the schematic diagram of the S200 step of the present embodiment; cleanout fluid is provided; wash the light binding 201 that the part of the 3rd semi-finished product 300 protection amorphous si-layer 104 has cured; sacrifice layer 103 leaves behind amorphous module 001, becomes the 4th semi-finished product 400 and process for next step；Refer again to Fig. 8, it it is the schematic diagram of the S210 step of the present embodiment, at amorphous silicon surface coated UV fluorescent material and the mixture 501 of light binding, the actually surface of sacrifice layer also must could be implemented on coating process together, the present embodiment uses spraying method, in the case of amorphous si-layer is the thinnest, can also use and be coated with, void region can also fill, selection is coated with and sprays simply equivalent does not has substantive difference, as long as being filled up void region, there is no any difference, becoming the 5th semi-finished product 500 and processing for next step；Refer again to Fig. 9, be the schematic diagram of the S215 step of embodiment, frictioning, also include providing frictioning equipment, the mixture that the S210 step on amorphous silicon surface sprays is scraped off, become the 5th semi-finished product 500a and process for next step；Refer again to Figure 10, be the schematic diagram of S220 to the S240 step of the present embodiment.There is provided second to flood template 902a, the mixture coating of the 5th semi-finished product 500a is exposed, development, clean with pure water, so far, sacrifice layer 103 leaves behind multiple unit anti-counterfeit structure 000, become the 6th semi-finished product 600a and process for next step；Besides say the method that different Ultraluminescence module submodules can be arranged to different colors, first it is coated with on amorphous silicon surface with the mixture 501 of a submodule ultraviolet fluorescence powder and light binding, second floods template 902a only has the void region exposure that this submodule is corresponding, development, clean with pure water, it is coated with on amorphous silicon surface with the mixture 501 of another submodule ultraviolet fluorescence powder and light binding again, second floods template 902a only has the void region exposure that this submodule is corresponding, development, clean with pure water, until complete all submodules are arranged, so, different submodules just can be with different ultraviolet fluorescence powders, under ultraviolet light irradiates, different dacron color is taken on the different submodule of realization；Refer again to Figure 13, be the schematic diagram of the S250 step of the present embodiment, it is provided that sacrificial layer etching liquid, etching sacrificial layer, so far, one group of multiple unit anti-counterfeit structure 000 just prepares, it is provided that cleans and filters equipment and pure water, clean, filter, it is possible to be applied to industry and suffer.

Figure 14 is the flow chart of this utility model the 3rd embodiment.

With reference to Fig. 4 to Fig. 8, Figure 11 to Figure 13, it is the 4th embodiment of this utility model, it is that to prepare second embodiment of this utility model be anti-counterfeit structure method, i.e. prepare Ultraluminescence module 002 bottom surface in the same plane with amorphous silicon module 001 bottom surface, the anti-counterfeit structure that described Ultraluminescence module 002 is bigger than amorphous silicon module 001 thickness, the method comprises the following steps: S110, it is provided that substrate of glass；S120, on the glass substrate face plating adhesive layer；S130, plates sacrifice layer on adhesive layer；S140, plates amorphous si-layer on sacrifice layer；S150, at amorphous si-layer coated thereon light binding；S160, it is provided that ultraviolet light source, it is provided that first floods template, the light binding coating exposure that S150 step is coated with；S170, it is provided that developer solution, development；S180, it is provided that pure water, cleans；S190, it is provided that plasma etching is equipped, etching does not has the neighboring area outside the amorphous si-layer that light binding is protected, i.e. void region and each unit anti-counterfeit structure；S200, it is provided that cleanout fluid, cleans, it is simply that wash for protecting the light binding without determining silicon layer；S210, at amorphous silicon surface coated UV fluorescent material and the mixture of light binding；S220, it is provided that second floods template, the mixture coating exposure that S200 step is coated with；S230, development；S240, cleans with pure water；S250, it is provided that sacrificial layer etching liquid, etching sacrificial layer；S260, it is provided that clean and filter equipment and pure water, cleans, and filters；Wherein, S120 step, described adhesive layer is Cr or Ni or rustless steel, and described plating refers to Vacuum Deposition；S130 step, described sacrifice layer is Al or Cu, and described plating refers to Vacuum Deposition；S170 step, described offer developer solution, developer solution is that tetramethyl adds water；Described development, with developer solution cured portion light binding；S180 step, cleans, washes S170 development step uncured portion light binding with pure water.

Refer again to Fig. 4, it it is the schematic diagram of S110 to the S150 step of the present embodiment, adhesive layer 102 is plated on substrate of glass 101, sacrifice layer 103 is plated on adhesive layer 102, amorphous si-layer 104 is plated on sacrifice layer 103, at amorphous si-layer 104 coated thereon light binding 105, become the first semi-finished product 100 and process for next step；Refer again to Fig. 5; it it is the schematic diagram of S160 to the S180 step of the present embodiment; there is provided ultraviolet light source 999, it is provided that first floods template 901, the light binding coating of the first semi-finished product 100 is exposed; developer solution is provided; development, it is provided that pure water, cleans; the light binding 105 of the first semi-finished product 100 leaves behind the light binding 201 having cured by the part of protection amorphous si-layer 104, becomes the second semi-finished product 200 and processes for next step；Refer again to Fig. 6; it it is the schematic diagram of the S190 step of the present embodiment; S190; offer plasma etching is equipped; etching does not has the amorphous si-layer that light binding is protected; i.e. etch away the neighboring area outside void region 301 and each unit anti-counterfeit structure, exposed portion sacrifice layer 103, become the 3rd semi-finished product 300 and process for next step；Refer again to Fig. 7; it it is the schematic diagram of the S200 step of the present embodiment; cleanout fluid is provided; wash the light binding 201 that the part of the 3rd semi-finished product 300 protection amorphous si-layer 104 has cured; sacrifice layer 103 leaves behind amorphous module 001, becomes the 4th semi-finished product 400 and process for next step；Refer again to Fig. 8, it it is the schematic diagram of the S210 step of the present embodiment, at amorphous silicon surface coated UV fluorescent material and the mixture 501 of light binding, the actually surface of sacrifice layer also must could be implemented on coating process together, the present embodiment uses spraying method, in the case of amorphous si-layer is the thinnest, can also use and be coated with, void region can also fill, selection is coated with and sprays simply equivalent does not has substantive difference, as long as being filled up void region, there is no any difference, becoming the 5th semi-finished product 500 and processing for next step；Refer again to Figure 12, it it is the schematic diagram of S220 to the S240 step of the present embodiment, it it is the schematic diagram of S220 to the S240 step of the present embodiment, there is provided second to flood template 902, the mixture coating of the 5th semi-finished product 500 is exposed, development, clean with pure water, so far, sacrifice layer 103 leaves behind multiple unit anti-counterfeit structure 000, become the 6th semi-finished product 600 and process for next step；Refer again to Figure 13, be the schematic diagram of the S250 step of the present embodiment, it is provided that sacrificial layer etching liquid, etching sacrificial layer, so far, one group of multiple unit anti-counterfeit structure 000 just prepares, it is provided that cleans and filters equipment and pure water, clean, filter, it is possible to be applied to industry and suffer.

Claims

1. an anti-counterfeit structure, it is characterised in that: this anti-counterfeit structure includes the amorphous silicon module of lamellar, and amorphous silicon module has void region, and this anti-counterfeit structure also includes that Ultraluminescence module, Ultraluminescence module are embedded in described void region.

Anti-counterfeit structure the most according to claim 1, it is characterised in that: described Ultraluminescence module bottom surface is in the same plane with amorphous silicon module bottom surface, described Ultraluminescence module and amorphous silicon module consistency of thickness.

Anti-counterfeit structure the most according to claim 1, it is characterised in that: described Ultraluminescence module bottom surface is in the same plane with amorphous silicon module bottom surface, and described Ultraluminescence module is bigger than amorphous silicon module thickness.

Anti-counterfeit structure the most according to claim 1, it is characterised in that: between the thickness of described laminated structure is 2 to 10 microns.