CN205385038U - Nitride -based emitting diode epitaxial structure - Google Patents
Nitride -based emitting diode epitaxial structure Download PDFInfo
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- CN205385038U CN205385038U CN201620135443.6U CN201620135443U CN205385038U CN 205385038 U CN205385038 U CN 205385038U CN 201620135443 U CN201620135443 U CN 201620135443U CN 205385038 U CN205385038 U CN 205385038U
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Abstract
The utility model provides a nitride -based emitting diode epitaxial structure, this epitaxial structure from bottom to up include in proper order: substrate, forming core layer, buffer layer, N type gaN layer, multi -quantum well active area, electron barrier layer, P type III clan nitride stromatolite, P type III clan nitride stromatolite replaces range upon range of forming, x=0.01 -0.3 by P type gaN layer and P type inxGa1 -xN layer in proper order. The utility model discloses a heterojunction is introduced to P type III clan nitride stromatolite in the energy band in LED's P type region, protruding at the pointed cone form of a low potential barrier of valence band department's structure, can gather the hole to the reinforcing hole makes the interior hole concentration of quantum well promote to the injection of multi -quantum well active area, is favorable to showing the light emitting power who improves LED. Simultaneously, the stromatolithic introduction of P type III clan nitride can not bring negative effects to LED's electric conductive property.
Description
Technical field
This utility model relates to a kind of technical field of semiconductors, is specifically related to a kind of gallium nitride based light emitting diode epitaxial structure.
Background technology
In gallium nitride (GaN) based light-emitting diode (Light-emittingdiode, LED), the P type doping relative difficulty of GaN, cause that P type doping content is far below n-type doping concentration.Meanwhile, the effective mass in hole, much larger than the effective mass of electronics, causes the mobility mobility much smaller than electronics in hole.These two aspects factor makes hole to the injection rate in the MQW region injection rate much smaller than electronics, causes electronics and does not mate with what hole was injected, causes that the luminous efficiency of LED is restricted and the problem of luminous efficiency decay under big electric current.Strengthen the injection in hole, the luminescent properties tool promoting LED is of great significance.
Strengthen hole and be injected with two class methods.First method is to improve the technology of GaN material P type doping, implements to improve in the ins and outs such as adulterant, impurity activation technique.Despite many researcheres, the P type doping techniques of GaN material is studied, but there are no the report of breakthrough.Doping techniques general at present is still Mg as doped chemical, carries out impurity activation by thermal anneal process.Second method is that LED epitaxial structure is designed, and controls the transport process of LED carriers by changing band structure, is guided in more hole and be injected in MQW region under applying voltage.Second method has more operability, and the lifting effect of LED performance is fairly obvious.
Utility model content
In order to overcome the deficiencies in the prior art, the purpose of this utility model is in that providing a kind of strengthens the gallium nitride based light emitting diode epitaxial structure that hole is injected.
For solving the problems referred to above, the technical scheme that this utility model adopts is as follows:
A kind of gallium nitride based light emitting diode epitaxial structure, includes: substrate, forming core layer, cushion, N-type GaN layer, multi-quantum well active region, electronic barrier layer, P type group III-nitride lamination from bottom to top successively；
Described P type group III-nitride lamination is by P type GaN layer and P type InxGa1-xN shell is alternately laminated successively to be formed, wherein, and x=0.01-0.3.
As preferably, described P type GaN layer and/or P type InxGa1-xThe thickness of N shell is 20-1000nm.
As preferably, described substrate is sapphire, Si, SiC, GaN, ZnO, LiGaO2、LaSrAlTaO6, one in Al and Cu.
As preferably, described multi-quantum well active region is formed by y MQW barrier layer and y-1 MQW potential well layer are alternately laminated successively, and described y is the integer more than 2.
As preferably, the material of described MQW barrier layer is the one in GaN, InGaN, AlGaN and AlInGaN.
As preferably, the material of described MQW potential well layer is InGaN.
As preferably, the material of described electronic barrier layer is AlGaN, InAlN or AlInGaN.
The preparation method of above-mentioned gallium nitride based light emitting diode epitaxial structure, comprises the following steps that
1) on substrate, forming core layer, cushion, N-type GaN layer, multi-quantum well active region, electronic barrier layer are grown successively；
2) alternating growth P type GaN layer and P type In successively on electronic barrier layerxGa1-xN shell, x=0.01-0.3, obtain P type group III-nitride lamination；
Wherein, the growing method of described P type GaN layer is as follows: controlled by reaction chamber temperature at 900-1100 DEG C, passes into two luxuriant magnesium, ammonia, nitrogen and trimethyl gallium, at described electronic barrier layer or P type InxGa1-xGrowth P-type GaN layer on N shell, doping content is 3-9 × 1017cm-3；
Wherein, described P type InxGa1-xThe growing method of N shell is as follows: reaction chamber temperature keeps 900-1100 DEG C, passes into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, growing P-type In in aforementioned p-type GaN layerxGa1-xN shell, doping content is 3-9 × 1017cm-3。
As preferably, step 2) in, alternating growth P type GaN layer and P type In successively on electronic barrier layer0.2Ga0.8N shell,
Wherein, the growing method of described P type GaN layer is as follows: controlling reaction chamber temperature, at 950 DEG C, to pass into two luxuriant magnesium, ammonia, nitrogen and trimethyl gallium, growth P-type GaN layer on described electronic barrier layer, thickness is 20-40nm, and doping content is 5 × 1017cm-3；
Wherein, described P type In0.2Ga0.8The growing method of N shell is as follows: reaction chamber temperature controls, at 950 DEG C, to pass into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, growing P-type In in aforementioned p-type GaN layer0.2Ga0.8N shell, thickness is 150-200nm, and doping content is 5 × 1017cm-3。
As preferably, step 1) in, concrete operation step is as follows:
A) substrate processing: putting in MOCVD device by (0001) crystal orientation Sapphire Substrate, reaction chamber temperature is increased to 1000-1300 DEG C, passes into hydrogen, carries out high-temperature baking to substrate；
B) growth forming core layer: reaction chamber temperature is controlled at 400-700 DEG C, pass into ammonia, hydrogen and trimethyl gallium, at Grown GaN forming core layer, forming core layer thickness≤1nm；
C) grown buffer layer: controlled by reaction chamber temperature at 400-700 DEG C, pass into ammonia, hydrogen and trimethyl gallium, grown buffer layer on forming core layer, buffer layer thickness is 100-300nm；
D) growth N-type GaN layer: controlled by reaction chamber temperature at 1000-1500 DEG C, pass into silane, ammonia, hydrogen and trimethyl gallium, on the buffer layer growth N-type GaN layer, thickness is 2-4 μm, and doping content is 3-9 × 1018cm-3；
E) growth multi-quantum well active region: stack gradually growth MQW barrier layer and MQW potential well layer in N-type GaN layer；This multi-quantum well active region orlop and the superiors are MQW barrier layer；
Wherein, the growing method of MQW barrier layer is as follows: control reaction chamber temperature, at 800-900 DEG C, to pass into ammonia, nitrogen and trimethyl gallium, grows MQW barrier layer in N-type GaN layer or MQW potential well layer, and thickness is 12-18nm；
Wherein, the growing method of MQW potential well layer is as follows: control reaction chamber temperature, at 700-780 DEG C, to pass into ammonia, nitrogen, trimethyl gallium and trimethyl indium, grows MQW potential well layer on GaN MQW barrier layer, and thickness is 2-4nm；
F) growth electronic barrier layer: controlled by reaction chamber temperature at 900-1100 DEG C, pass into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl aluminium, grows electronic barrier layer in multi-quantum well active region, and thickness is 80-200nm, doping content 3-9 × 1017cm-3。
Compared to existing technology, the beneficial effects of the utility model are in that:
1) this utility model is by p-type GaN and the InGaN nitride stacks replaced, and lamination A and lamination B contacts with each other and constitutes hetero-junctions, can form the low barrier region in valence band in the interface of two laminations, thus producing the effect of void coalescence；
2) the gallium nitride based light emitting diode epitaxial structure that this utility model provides, basically identical with tradition LED voltage under equal current condition, illustrate that the electric conductivity of LED will not be brought negative influence by the introducing of P type group III-nitride lamination.
Below in conjunction with the drawings and specific embodiments, this utility model is described in further detail.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment 1；
In Fig. 1, each accompanying drawing labelling: 1, substrate；2, forming core layer；3, cushion；4, N-type GaN layer；5, multi-quantum well active region；51, MQW barrier layer；52, MQW potential well layer；6, electronic barrier layer；7, P type group III-nitride lamination；71, P type GaN layer；72, P type InxGa1-xN shell；
Fig. 2 is the energy band diagram of comparative example 1；
Fig. 3 is the energy band diagram of embodiment 1；
Fig. 4 is the hole concentration figure of comparative example 1；
Fig. 5 is the hole concentration figure of embodiment 1；
Fig. 6 is the current-voltage curve comparison diagram of embodiment 1 and comparative example 1；
Fig. 7 is the luminous power-current curve comparison diagram of embodiment 1 and comparative example 1.
Detailed description of the invention
In this utility model, such as non-specified otherwise, described " on ", the temporald eixis word such as D score be construed as the temporald eixis to accompanying drawing.
This utility model provides a kind of gallium nitride based light emitting diode epitaxial structure, as it is shown in figure 1, include successively from bottom to top: substrate 1, forming core layer 2, cushion 3, N-type GaN layer 4, multi-quantum well active region 5, electronic barrier layer 6 and P type group III-nitride lamination 7；
Described P type group III-nitride lamination is by P type GaN layer and P type InxGa1-xN shell is alternately laminated successively to be formed, wherein, and x=0.01-0.3.
In this utility model, specifically, as it is shown in figure 1, described P type GaN layer is laminated in electronic barrier layer or P type InxGa1-xOn N shell, described P type InxGa1-xN shell is laminated in P type GaN layer；P type group III-nitride is stacked in P type GaN layer and P type InxGa1-xForming GaN/InGaN hetero-junctions between N shell, the valence band at hetero-junctions place produces a low barrier region, causes the effect of void coalescence.
Described multi-quantum well active region is stacked gradually formed by y MQW barrier layer 51 and y-1 MQW potential well layer 52, wherein, MQW barrier layer is laminated in N-type GaN layer or on MQW potential well layer, and MQW potential well layer is laminated on MQW barrier layer；
Described electronic barrier layer is laminated in the N-type GaN layer of multi-quantum well active region.
Prepare gallium nitride based light emitting diode epitaxial structure, comprise the following steps:
1) on substrate, forming core layer, cushion, N-type GaN layer, multi-quantum well active region and electronic barrier layer are grown successively；
2) alternating growth P type GaN layer and P type In successively on electronic barrier layerxGa1-xN shell, x=0.01-0.3, obtain P type group III-nitride lamination；
Wherein, the growing method of described P type GaN layer is as follows: controlled by reaction chamber temperature at 900-1100 DEG C, passes into two luxuriant magnesium, ammonia, nitrogen and trimethyl gallium, at described electronic barrier layer or P type InxGa1-xGrowth P-type GaN layer on N shell, doping content is 3-9 × 1017cm-3；Namely P type group III-nitride lamination initiates with P type GaN layer；
Wherein, described P type InxGa1-xThe growing method of N shell is as follows: reaction chamber temperature keeps 900-1100 DEG C, passes into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, growing P-type In in aforementioned p-type GaN layerxGa1-xN shell, doping content is 3-9 × 1017cm-3。
Embodiment 1
As it is shown in figure 1, a kind of gallium nitride based light emitting diode epitaxial structure, include successively from bottom to top: substrate 1, forming core layer 2, cushion 3, N-type GaN layer 4, multi-quantum well active region 5, electronic barrier layer 6 and P type group III-nitride lamination 7；
Described P type group III-nitride lamination is by P type GaN layer and P type In0.2Ga0.8N shell is alternately laminated successively to be formed.
The method preparing above-mentioned gallium nitride based light emitting diode epitaxial structure, comprises the following steps:
1) substrate 1 processes: put in MOCVD device by (0001) crystal orientation Sapphire Substrate, and reaction chamber temperature is increased to 1050 DEG C, passes into hydrogen, and substrate is carried out high-temperature baking；
2) growth forming core layer 2: controlling reaction chamber temperature, at 530 DEG C, to pass into ammonia, hydrogen and trimethyl gallium, at Grown GaN forming core layer, forming core layer thickness is 1nm；
3) grown buffer layer 3: control reaction chamber temperature, at 530 DEG C, to pass into ammonia, hydrogen and trimethyl gallium, in step 2) described in forming core layer on grown buffer layer, buffer layer thickness is 200nm；
4) growth N-type GaN layer: pass into silane, ammonia, hydrogen and trimethyl gallium, in step 3) growth N-type GaN layer on the cushion 3 that obtains, thickness is 3 μm, and doping content is 5 × 1018cm-3；
5) growth multi-quantum well active region: in step 4) the N-type GaN layer that obtains stacks gradually 11 MQW barrier layers of growth and 10 MQW potential well layers；This multi-quantum well active region orlop and the superiors are MQW barrier layer；
Wherein, the growing method of MQW barrier layer is as follows: control reaction chamber temperature, at 810 DEG C, to pass into ammonia, nitrogen and trimethyl gallium, in step 4) growth MQW barrier layer on the N-type GaN layer that obtains or MQW potential well layer, thickness is 12nm；
Wherein, the growing method of MQW potential well layer is as follows: control reaction chamber temperature, at 750 DEG C, to pass into ammonia, nitrogen, trimethyl gallium and trimethyl indium, and the GaN MQW barrier layer described in step 5 grows MQW potential well layer, and thickness is 3nm；
6) growth electronic barrier layer 6: reaction chamber temperature is controlled at 950 DEG C, pass into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl aluminium, in step 5) growth electronic barrier layer in the described multi-quantum well active region that obtains, thickness is 150nm, doping content 5 × 1017cm-3；
7) growing P-type group III-nitride lamination 7: in step 6) electronic barrier layer that obtains stacks gradually growth P-type GaN layer and P type In0.2Ga0.8N shell；
Wherein, the growing method of described P type GaN layer is as follows: controlling reaction chamber temperature, at 950 DEG C, to pass into two luxuriant magnesium, ammonia, nitrogen and trimethyl gallium, growth P-type GaN layer on described electronic barrier layer, thickness is 30nm, and doping content is 5 × 1017cm-3；
Wherein, described P type In0.2Ga0.8The growing method of N shell is as follows: reaction chamber temperature controls, at 950 DEG C, to pass into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, growing P-type In in aforementioned p-type GaN layer0.2Ga0.8N shell, thickness is 170nm；Doping content is 5 × 1017cm-3。
In the present embodiment 1, step 1) in, substrate can by Si, SiC, GaN, ZnO, LiGaO2、LaSrAlTaO6, Al or Cu substitute；
In the present embodiment 1, step 2) in, the material of forming core layer can be substituted by AlN；
In the present embodiment 1, step 3) in, the material of cushion can be substituted by AlN；
In the present embodiment 1, step 6) electronic barrier layer also can adopt AlInGaN or InAlN material to make.
Embodiment 2
Embodiment 2 is on the basis of embodiment 1, in step 7) after, at P type In0.2Ga0.8On N shell, regrowth one thickness is the P type GaN layer of 30nm.
Embodiment 3
Embodiment 3 is on the basis of embodiment 1, in step 7) after, at P type In0.2Ga0.8N shell grows the P type GaN layer that a thickness is 30nm and the P type In that a thickness is 170nm more successively0.2Ga0.8N shell.
Embodiment 4
Embodiment 4 as different from Example 1, by P type In0.01Ga0.99P type In in N shell alternate embodiment 10.2Ga0.8N shell.
Embodiment 5
Embodiment 5 as different from Example 1, by P type In0.3Ga0.7P type In in N shell alternate embodiment 10.2Ga0.8N shell.
Comparative example 1
A kind of gallium nitride based light emitting diode epitaxial structure, includes: substrate 1, forming core layer 2, cushion 3, N-type GaN layer 4, multi-quantum well active region 5, electronic barrier layer 6, P type GaN layer 7 from bottom to top successively；
Wherein the growing method of substrate 1 to electronic barrier layer 6 is shown in embodiment 1 step 1) to step 6), the growing method of its P type GaN layer is as follows:
Control reaction chamber temperature, at 950 DEG C, to pass into two luxuriant magnesium, ammonia, nitrogen and trimethyl gallium, in step 6) described in electronic barrier layer on growth monolayer P type GaN layer, thickness is 200nm, and doping content is 5 × 1017cm-3。
Comparative example 2
Comparative example 2 as different from Example 1, by P type In0.005Ga0.995P type In in N shell alternate embodiment 10.2Ga0.8N shell.
Comparative example 3
Comparative example 3 as different from Example 1, by P type In0.5Ga0.5P type In in N shell alternate embodiment 10.2Ga0.8N shell.
Detection embodiment
The gallium nitride based light emitting diode epitaxial structure that embodiment 1-5 and comparative example 1-3 is obtained carries out being with and hole simulation calculating, and carries out electric property detection, and its result example is as follows:
The energy band diagram of Fig. 2 and Fig. 3 respectively comparative example 1 and embodiment 1, from the comparison of Fig. 2 and Fig. 3, its P type group III-nitride of the gallium nitride based light emitting diode epitaxial structure that embodiment 1 obtains is stacked in the position of 0.24 μm and constructs a hetero-junctions, make valence band create the cone-shaped projection of a low potential barrier, the valence band of the epitaxial structure of comparative example 1 does not then have such cone-shaped projection；
Fig. 4 and Fig. 5 is comparative example 1 and the hole concentration figure of embodiment 1, from the comparison of Fig. 4 and Fig. 5, the gallium nitride based light emitting diode epitaxial structure that embodiment 1 obtains has the hole of high concentration the position (i.e. the position of valence band pointed cone projection) of 0.24 μm, illustrates that P type group III-nitride lamination serves good void coalescence effect；The hole concentration of contrast MQW region (0.05-0.20 μm of position), the hole concentration of the epitaxial structure that embodiment 1 obtains exceeds about 50% than the hole concentration of the epitaxial structure of comparative example 1, promotes effect obvious.
Fig. 6 is the current-voltage curve figure of embodiment 1 and comparative example 1, and it is basically identical that comparative example 1 and embodiment 1 obtain gallium nitride based light emitting diode epitaxial structure voltage under equal current condition；Illustrate that the electric conductivity of LED will not be negatively affected by the introducing of P type group III-nitride lamination；
Fig. 7 is the luminous power-current curve diagram of embodiment 1 and comparative example 1.By than, the gallium nitride based light emitting diode epitaxial structure that embodiment 1 obtains is greater than comparative example 1 in the luminous power under equal current condition, luminous power promote amplitude up to 70%.
By above-mentioned a series of contrast, can absolutely prove, by by P type GaN layer and P type InGaN layer stratification P type group III-nitride lamination, hetero-junctions can be introduced in being with in the territory, p type island region of LED, the cone-shaped projection of a low potential barrier is built, it is possible to assemble hole, thus strengthening the hole injection to multi-quantum well active region at valence band place, hole concentration in SQW is promoted, is conducive to significantly improving the luminous power of LED.Meanwhile, the electric conductivity of LED will not be negatively affected by the introducing of P type group III-nitride lamination.
Particular embodiments described above; the purpose of this utility model, technical scheme and beneficial effect have been further described; it it should be understood that; the foregoing is only specific embodiment of the utility model; it is not limited to this utility model; all within spirit of the present utility model and principle, any amendment of making, equivalent replacement, improvement etc., should be included within protection domain of the present utility model.It will be understood by those within the art that: the technical scheme described in foregoing embodiments can be modified by it, or wherein some or all of technical characteristic is carried out equivalent replacement；And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of each embodiment technical scheme of this utility model.
Claims (7)
1. a gallium nitride based light emitting diode epitaxial structure, it is characterised in that include successively from bottom to top: substrate, forming core layer, cushion, N-type GaN layer, multi-quantum well active region, electronic barrier layer, P type group III-nitride lamination；
Described P type group III-nitride lamination is by P type GaN layer and P type InxGa1-xN shell is alternately laminated successively to be formed, wherein, and x=0.01-0.3.
2. gallium nitride based light emitting diode epitaxial structure as claimed in claim 1, it is characterised in that described P type GaN layer and/or P type InxGa1-xThe thickness of N shell is 20-1000nm.
3. gallium nitride based light emitting diode epitaxial structure as claimed in claim 1, it is characterised in that the material of described substrate is sapphire, Si, SiC, GaN, ZnO, LiGaO2、LaSrAlTaO6, one in Al and Cu.
4. gallium nitride based light emitting diode epitaxial structure as claimed in claim 1, it is characterised in that described multi-quantum well active region is formed by y MQW barrier layer and y-1 MQW potential well layer are alternately laminated successively, and described y is the integer more than 2.
5. gallium nitride based light emitting diode epitaxial structure as claimed in claim 4, it is characterised in that the material of described MQW barrier layer is the one in GaN, InGaN, AlGaN and AlInGaN.
6. gallium nitride based light emitting diode epitaxial structure as claimed in claim 4, it is characterised in that the material of described MQW potential well layer is InGaN.
7. gallium nitride based light emitting diode epitaxial structure as claimed in claim 1, it is characterised in that the material of described electronic barrier layer is AlGaN, InAlN or AlInGaN.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524519A (en) * | 2018-12-18 | 2019-03-26 | 南通大学 | A kind of nitride quantum well structure light-emitting diode |
| CN116154059A (en) * | 2023-04-04 | 2023-05-23 | 江西兆驰半导体有限公司 | Gallium nitride light-emitting diode epitaxial structure, LED and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524519A (en) * | 2018-12-18 | 2019-03-26 | 南通大学 | A kind of nitride quantum well structure light-emitting diode |
| CN109524519B (en) * | 2018-12-18 | 2020-12-25 | 南通大学 | Nitride quantum well structure light-emitting diode |
| CN116154059A (en) * | 2023-04-04 | 2023-05-23 | 江西兆驰半导体有限公司 | Gallium nitride light-emitting diode epitaxial structure, LED and preparation method thereof |
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