CN205382207U - Diffusion of gases subassembly, low temperature polycrystalline silicon are handled cavity system and are made process gas flow into subassembly of handling cavity - Google Patents
Diffusion of gases subassembly, low temperature polycrystalline silicon are handled cavity system and are made process gas flow into subassembly of handling cavity Download PDFInfo
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- CN205382207U CN205382207U CN201390000636.5U CN201390000636U CN205382207U CN 205382207 U CN205382207 U CN 205382207U CN 201390000636 U CN201390000636 U CN 201390000636U CN 205382207 U CN205382207 U CN 205382207U
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- 238000004062 sedimentation Methods 0.000 claims description 21
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 235000012377 Salvia columbariae var. columbariae Nutrition 0.000 description 1
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01D—NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAM TURBINES
- F01D9/00—Stators
- F01D9/02—Nozzles; Nozzle boxes; Stator blades; Guide conduits, e.g. individual nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
Abstract
The utility model provides a diffusion of gases subassembly, low temperature polycrystalline silicon are handled cavity system and are made process gas flow into subassembly of handling cavity. The utility model discloses a: the backplate has the entry and is used for providing a process gas to handling the cavity, the diffuser plate contains the several opening and is used for permitting process gas to flow into the processing cavity, the baffler sets up between backplate and diffuser plate, contains the several opening, and an at least air flow guide component (guide), set up between baffler and backplate, be suitable for this process gas side direction ground (laterally) of guide to flow. A plurality of extra characteristics are exposed.
Description
Related application
This application claims the 61/675th, the priority of No. 791 U.S. Provisional Patent Application, this U.S. Provisional Patent Application is entitled as " place's process gases flowing induction element (PROCESSGASFLOWGUIDESFORLARGEAREAPLASMAENHANCEDCHEMICALVA PORDEPOSITIONSYSTEMSANDMETHODS) strengthening the system and method for chemical vapour deposition (CVD) for large area plasma " (attorney docket 17243/DSS/AHRDWR/ESONG), and this U.S. Provisional Patent Application is fully incorporated in this for all purposes by reference.
Technical field
This utility model relates generally to the manufacture of electronic installation, and in particular to place's process gases flowing induction element of a kind of system and method strengthening chemical vapour deposition (CVD) for large area plasma.
Background technology
One of key step in the manufacture process of modern electronics, is through the chemical reaction of gas, forms thin film on substrate.This kind of depositing operation is commonly referred to as chemical vapour deposition (CVD) (chemical-vapordeposition, CVD).Traditional thermal chemical vapor deposition (thermalCVD) technique supply reacting gas, to the surface of substrate, carries out chemical reaction that heat brings out to generate required rete at this.On the other hand, plasma enhanced chemical vapor deposition (Plasma-enhancedCVD, what PECVD) increase reacting gas excites (excitation) and/or dissociate (Dissociation), it is by applying radio frequency (radio-frequency, RF) energy is on the reaction zone of substrate surface, thus producing plasma.Highly reactive species (species) in plasma reduces the energy occurred needed for chemical reaction, and with traditional hot CVD technique in comparison, the temperature needed for this kind of CVD technique can reduce.
Low temperature polysilicon process, for instance be the technique being used in and manufacturing planar display screen, is carried out, in processing in chamber, processing chamber and generally comprising gas distribution component, and gas is introduced into process chamber through this gas distribution component.Gas distribution component is typically used in PECVD chamber, to be introduced into the gas of chamber being namely evenly distributed on the surface of substrate after introducing chamber.In general, being evenly distributed gas on a surface of a substrate, can make to be arranged on the surface of the substrate processing chamber has preferably uniform deposition characteristic.
In general, gas distribution component comprises the gas inlet manifold (manifold) of ground connection (grounded), is connected to gas source to provide gas to process chamber.Gas inlet manifold allows gas to flow into gaseous diffuser, with the PECVD chamber introduced gas into equably above substrate surface.PECVD chamber 10 with reference to the prior art of Fig. 1 depicted, gas diffusion system 100 directly connects with PECVD chamber 10, and generally comprise there is the backboard 102 of gas access 104, baffler 106 and diffuser plate 108, in order to from pure gas supply pipeline (feedline) by gas equably (evenly) at least dispersed in the region of substrate, and alleviate the pneumatic flowing that (minimize) is chaotic.The flat component of baffler 106 usually ring-type (annular), has several very tiny hole and passes through wherein, with the space 110 being dispersed evenly into above diffuser plate 108 by gas from entrance 104.Gas is usually provided via pure gas pipeline, and wherein reactant and vector gas (carriergases) are mixed, and then provides the gas regional area at baffler 106 overcentre of high concentration.Diffuser plate 108 is generally also element plane, ring-type, has several hole, and it is more than the hole of baffler 106, and gas is through the hole of diffuser plate 108 or in the way of diffusing through the hole of diffuser plate 108, provides the gas of uniform concentration on substrate.
Although configuring as above, inventor of the present utility model realizes, and in some cases, the sedimentation rate of substrate regions produced by the gas diffusion system 100 of prior art is not uniform.Accordingly, it is capable to there be method and the device of sedimentation rate evenly on the region of substrate, it is in need.
Utility model content
This utility model relates to method and the device of the gas diffusion component being used in deposition processes chamber.Gas diffusion component comprises: backboard, has entrance in order to the place's of offer process gases to processing chamber；Diffuser plate, comprises several opening, in order to allow place's process gases inflow to process chamber；Baffler, is arranged between backboard and diffuser plate, and baffler comprises several opening；And at least one air flow guide element (guide), it is arranged between baffler and backboard, is suitable to guiding and processes gas laterally (laterally) flowing.
In some embodiments, this utility model provides low temperature polycrystalline silicon (polysilicon) to process chamber system.This system includes processing gas supply device, pedestal (susceptor) in order to support substrate and gas diffusion component.Gas diffusion component includes: backboard, has and is coupled to the entrance processing gas supply device；Diffuser plate, comprises several opening, flow to substrate in order to the place's of permission process gases；Baffler, is arranged between backboard and diffuser plate, and baffler comprises multiple opening；And at least one air flow guide element, it is arranged between baffler and backboard, it is adaptable to guiding processes gas and laterally flows.
In other embodiments, this utility model provides the method making place's process gases inflow process chamber.The method comprises determining that the region that can receive relatively low sedimentation rate in other situations on substrate；And guiding processes gas and laterally flows to the region that can receive relatively low sedimentation rate in other situations on this substrate of surface between backboard and diffuser plate.
Many other aspects are also provided herein.Other features of the present utility model and aspect will become apparent more completely from described in detail below, appended claims and accompanying drawing.
Accompanying drawing explanation
Fig. 1 illustrates the schematic diagram of the example of the pecvd process chamber of prior art.
Fig. 2 A be shown according to the example of the gas diffusion component (for the sake of clarity therefore omit diffuser plate) of some embodiments of this utility model on look decomposition diagram.
Fig. 2 B is shown according to the upper viewing view of the example of the gas diffusion component (for the sake of clarity therefore omit diffuser plate) of some embodiments of this utility model.
Fig. 3 is shown according to the profile of the example of the gas diffusion component of some embodiments of this utility model.
Fig. 4 illustrates the amplification profile of the exemplary gas diffusion component circle note position M according to some embodiments of this utility model of Fig. 3.
Fig. 5 A is shown according to profile after a part of simplification of the example of the gas diffusion component of some embodiments of this utility model.
Fig. 5 B is shown according to profile after a part of simplification of the gas diffusion component of another example of some embodiments of this utility model.
Fig. 6 is shown according to the schematic diagram of the example of the internal gas flow induction element around gas access configuration (for the sake of clarity therefore omit baffler and diffuser plate) of some embodiments of this utility model.
Fig. 7 be use the traditional gas diffusion component of prior art and in the chart of relative deposition rate produced by the region of substrate or figure.
Fig. 8 uses the gas diffusion component of this utility model embodiment and the chart of relative deposition rate produced by region on substrate or figure.
Fig. 9 is shown according to the flow chart of the example method making gas flow through gas diffusion component of some embodiments of this utility model.
Detailed description of the invention
This utility model provides method and the device of improvement, can realize uniform sedimentation rate in chemical vapour deposition (CVD).In specific words, this utility model contributes to when manufacturing the display of low temperature polycrystalline silicon (Low-TemperaturePolysilicon, LTPS) of large area (being greater than the substrate of 730mmx920mm), it is achieved deposition evenly.Right this utility model is also applicable to other techniques, size and structure.
Compared to the screen of non-crystalline silicon, the PECVD technique of LTPS liquid crystal display (LiquidCrystalDisplay, LCD) make the manufacture of Active Matrix Display screen more quickly, more conformability (integrated).Non-crystalline silicon, by allowing thin film transistor (TFT) (thinfilmtransistors, TFTs) be deposited on large substrate, has promoted active matrix industry, but not has been used in the monocrystal silicon of wafer.Although existing amorphous silicon technology has huge investment, for some application, polysilicon then there is provided the extra practice.Polysilicon (poly-Si) is bigger and more uniform particle, allows 100 times of ground of flowing of electronics faster than the non-crystalline silicon (a-Si) with unequal sized particles, thus reaching higher resolution and speed faster.Additionally, row/column driver electronics is not around screen area, but it is incorporated in glass substrate, therefore the wiring between TFT part (section) and pixel can be reduced.Therefore, LTPS pixel can more tight together, and reach 200dpi and above density.
There is the SiOx layer of multiple important pattern for LTPS technique.These stratotypes wherein three kinds comprise gate insulator (gateinsulator, GI) layer, interlayer dielectric (interlayerdielectric, ILD) layer and amorphous precursors buffering (amorphousprecursorbuffer) layer.The thickness uniformity of these a little SiOx layers, especially GISiOx, the success or not that manufactures for LTPS is critically important.SiOx film thickness uniformity and characteristic have been observed that it is be relevant to process gas flow distribution significantly.Therefore, depositing for uniform SiOx film, it is critically important for producing the process gases flowing of uniform place on large area substrates.
The system being currently used for the distribution of LTPS gas is dependent on gas barrier or unsteady flow (deflector) plate.Baffler contributes to locally increasing the SiOx uniformity of substrate regions central authorities.But, baffler now is in all lateral distributing gas fifty-fifty.Inventor have found that of this case, even the unevenness that the factor that lateral distribution still can not solve (address) is affected thickness by other causes.These factors include electrode distance (distance of such as diffuser plate and pedestal (Susceptor)), plasma density, flow rate of gas and other similar factor, among these factors, several factors is not easy to adjust, and its reason is in that demand or other unmodifiable physical characteristic of other rete.Therefore, inventor have found that of this case, when baffler provides the average lateral distribution of gas, high and low deposition rate pattern (pattern) occurs in specific region.In specific words, this pattern is included along the high deposition rate of two crossed diagonal extended from substrate corners to corner.Furthermore, this pattern comprises the region of low deposition rate, and it is near the central authorities on relatively long (such as: about 2500mm) limit of substrate.This specific pattern is called " butterfly pattern " (butterflypattern), and the appearance of this deposited picture is the restrictive condition of the SiOx thickness evenness having a strong impact on LTPS technique.
This utility model is by control place process gases lateral flow between backboard and diffuser plate, and the problem overcoming butterfly pattern.Gas diffusion component of the present utility model provides air flow guide element, can affect from the lateral flow of the gas of gas access on diffuser plate, but not prior art will process the practice that gas is laterally distributed fifty-fifty.In specific words, internal gas flow induction element is used for guiding the more gas region with relatively low deposition rate to substrate, and outer gas stream induction element is used for reducing allowing gas can flow to the vertical space on substrate with the relatively region of high gas flow sedimentation rate.In other words, by designing lateral gas flow pattern between backboard and diffuser plate, it is oppositely compatible with the sedimentation rate pattern because (otherwise) in other situations of lateral gas flow distribution uniform between backboard and diffuser plate can cause, this utility model provides the gas diffusion component of the uniformity of the sedimentation rate can improved on substrate regions.
In more detail, in order to reduce along central authorities' intersection (center-crossing) cornerwise higher deposition rate, and the relatively low deposition rate along long limit central authorities, four internal gas flow induction elements are arranged between baffler and backboard, flow to the centre on the long limit of substrate by lateral gas forming opening.In certain embodiments, it is possible to use the set-up mode of five or more, three or less internal gas flow induction element.Towards the opening of substrate long limit upper area, more than (such as two times more than) opening towards substrate minor face upper area.These internal gas flow induction elements also form barrier to prevent lateral gas from flowing to the corner of substrate.Additionally, be used for reducing the outer gas stream induction element of the vertical space between backboard and diffuser plate, it is set to reduce the gas flow flowing on central authorities' crossed diagonal.In certain embodiments, using four outer gas stream induction elements, it is arranged to radiation pattern.In other embodiments, it is possible to use the set-up mode of five or more, three or less outer gas stream induction element.In certain embodiments, outer gas stream induction element may be molded to the shape being compatible with relatively high sedimentation rate region when being not provided with induction element.In other words, being used for reducing the panel of the vertical space between backboard and diffuser plate, its shape can match or corresponding to observable inhomogeneities in conventional chambers (such as: high point (highspots) or deposition peak (depositionpeak)).
Refer to Fig. 2 A, its illustrate gas diffusion component 200 of the present utility model example on look decomposition diagram.Diffuser plate is not shown, therefore other element can be revealed.Gas diffusion component 200 comprises rectangle backboard 202, has entrance 204 formed therein.In certain embodiments, backboard 202 act as the removable upper cover or top board that process chamber.It may be noted that be that gas diffusion component 200 of the present utility model is adapted as directing replacement of the gas diffusion system 100 of prior art chamber 10.Therefore, gas diffusion component 200 of the present utility model is added existing chamber 10 (substituting traditional gas diffusion system 100), is according to new chamber of the present utility model.Entrance 204 is covered by discoid unsteady flow (deflector) or baffler 206, and it includes the opening of radial arrangement, is used for allowing gas flow to chamber from entrance 204.In Fig. 2 A, only least a portion of opening is shown in baffler 206.
In some embodiments as shown in Figure 2 A, internal gas flow induction element 210 is arranged and between backboard 202 and baffler 206 around entrance 204.Internal gas flow induction element 210 is the strip of three-dimensional (solid), bending, can be placed on any desired location between backboard 202 and baffler 206, to stop the lateral airflow on some direction, and allow the lateral airflow on other direction.The height of internal gas flow induction element 210 determines the distance between backboard 202 and baffler 206.This distance has been observed that the sedimentation rate that can affect substrate center region, and therefore, the height of internal gas flow induction element 210 is occurred in the central authorities of substrate by the deposition peaks or valleys (valley) being carefully chosen to avoid local.
In some shown certain exemplary embodiments, four internal gas flow induction elements 210 (because of the reason of baffler 206, only three can be seen that) are around surrounding's configuration of baffler 206, but have one section of standoff distance with the edge of baffler 206.It is used as other standoff distance.Internal gas flow induction element 210 is to be positioned, to form two bigger lateral openings of the upper area towards the substrate long limit central authorities behind location and two less openings of the upper area towards the substrate minor face central authorities behind location.Therefore, the location of internal gas flow induction element 210 is suitable to (1) and stops lateral gas to flow out from the region above substrate corners；(2) some lateral gas is allowed to flow to the upper area of substrate minor face central authorities；(3) more lateral gas is allowed to flow to the upper area of the long limit central authorities of substrate.It is used as other framework for different technique.
In certain embodiments, internal gas flow induction element 210 can be made up of aluminum or other material being suitable for.Internal gas flow induction element 210 may be adapted to be stably fixed backboard 202.Similarly, baffler 206 may be adapted to be stably fixed internal gas flow induction element 210.It is provided in lower and with reference to Fig. 5 A, Fig. 5 B and Fig. 6 about the more details of internal gas flow induction element 210.
Gas diffusion component 200 of the present utility model may also include outer gas stream induction element 212.Outer gas stream induction element 212 can be embodied as tall and thin square or oval sept (spacer), extends to the corner of backboard 202 with radiating from entrance 204.In certain embodiments, it is possible to use other shape.Outer gas stream induction element 212 can be firmly attached to backboard 202, for the vertical area reduced between backboard 202 and diffuser plate.According to technique or other factors, it is possible to use any applicable shape.In certain embodiments, the shape of outer gas stream induction element 212 can be chosen so as to mate sedimentation rate (such as thickness) pattern that can be formed on substrate in other situations when being not provided with outer gas stream induction element 212.In certain embodiments, outer gas stream induction element 212 can be embodied as plane aluminium sheet and can comprise square, circle or oblique (beveled) limit.
In the alternative embodiment of gas diffusion component 200 ', outer gas stream induction element 212 can have difformity and/or different thickness, with correspondence to or other situations when being related to be not provided with outer gas stream induction element 212 under the sedimentation rate pattern that formed in processes.For example, as shown in Figure 2 B, outer gas stream induction element 212 ' can have teardrop (teardrop) or bartlett pear (pear) shape, to be more matched in other situations when being not provided with outer gas stream induction element the deposited picture formed.
Fig. 3 and Fig. 4 is shown according to the profile of the example of gas diffusion component 200 of the present utility model.Please note that Fig. 4 illustrates the enlarged drawing of the gas diffusion component 200 circle note position M of Fig. 3.In detail, these a little figure illustrate the profile showing the internal gas flow induction element 210 being arranged between backboard 202 and baffler 206 and around entrance 204 configuration.Diffuser plate 308 is shown in the lower section of baffler 206.Please note that the opening of diffuser plate 308 and baffler 206 is not represented.Furthermore, it is noted that outer gas stream induction element 212 is not shown in these a little profiles.
Illustrate turning now to Fig. 5 A, Fig. 5 A gas diffusion component 200 example a part of simplification after generalized section.This specific schematic diagram is to provide to demonstrate the size (dimension) of part, and it is adjusted to achieve required lateral airflow, so that there is sedimentation rate evenly in the region of substrate.In detail, size A is the vertical height in the space between backboard 202 and diffuser plate 308, and size B is the vertical height in the space between baffler 206 and diffuser plate 308, and size C is the vertical height in the space between outer gas stream induction element 212 and diffuser plate 308.Therefore, as shown in Figure 5A, the height of internal gas flow induction element 210 allows to adjust size B, and the thickness of outer gas stream induction element 212 allows to adjust size C.
Turning now to Fig. 5 B, its illustrate another alternative gas diffusion component 200 ' a part of simplification after generalized section.As it has been described above, this figure demonstrates the size of part, the size of this part is adjusted to achieve required lateral airflow, and this lateral airflow can make the sedimentation rate having on the region of substrate evenly.Specifically, size A is the vertical height in the space between backboard 202 and diffuser plate 308, size B is the vertical height in the space between baffler 206 and diffuser plate 308, size C ' is the minimum vertical height in the space between outer gas stream induction element 212 ' and diffuser plate 308, size C " for the maximum vertical height in the space between outer gas stream induction element 212 ' and diffuser plate 308.Therefore, as shown in Figure 5 B, the height adjustment of internal gas flow induction element 210 size B, the Adjusting Shape of outer gas stream induction element 212 ' size C ' and size C ".
Fig. 6 is provided about the amplification reverse perspective view of example that gas access 204 arranged and be fixed on four internal gas flow induction elements 210 of backboard 202.Baffler and diffuser plate do not illustrate out.As it has been described above, internal gas flow induction element 210 is positioned to form two bigger lateral openings (being denoted as dimension D) towards the upper area of the substrate long limit central authorities behind location and two less openings (being denoted as size E) towards the upper area of the substrate minor face central authorities behind location.Therefore, as it has been described above, the location of internal gas flow induction element 210 is suitable to (1) stops the lateral gas flowing of the upper area from substrate corners；(2) some lateral gas flowing upper area towards substrate minor face central authorities is allowed；(3) upper area that the flowing of more lateral gas is central towards the long limit of substrate is allowed.
Fig. 7 and Fig. 8 illustrates the thickness chart 700 and 800 using and not using the film of diffusion component of the present utility model to deposit, use the commercial chamber that can obtain from the Applied Materials (AppliedMaterials) being positioned at California sage's santa clara (SantaClara, CA).
More specifically, thickness chart 700 display of Fig. 7 uses the traditional gas diffusion component of prior art and produced relative deposition rate on region on relative large substrate.The region 702 that the butterfly pattern generated comprises low deposition rate, it is near the central authorities on relatively long (such as: about 2500mm) limit of substrate, and high deposition rate region 704, its two crossed diagonal extended to corner along substrate corners.The membrane thickness unevenness of this kind of degree is problematic as (problematic).
Thickness chart 800 display of Fig. 8 use gas diffusion component of the present utility model and on the region of substrate produced relative deposition rate.According to this utility model, use inside and out air flow guide element so that gas is laterally distributed between backboard and diffuser plate.Compared to the thickness change using the gas diffusion component of prior art to cause in Fig. 7, gas diffusion component of the present utility model realizes the minimizing of thickness change, and it represents that the uniformity can obtain improvement.
Fig. 9 is the flow chart of the example method 900 making gas flow through gas diffusion component according to some embodiments of this utility model.In execution process, it is determined that the region (902) of the relatively low sedimentation rate on test substrate.In certain embodiments, the region of the relatively high sedimentation rate on test substrate also can be determined (904).Based on high and low deposition rate determination result, internal gas flow induction element is arranged and between backboard and baffler around gas access, processes, with guiding, the region (906) that gas is laterally towards on the substrate regions with relatively low sedimentation rate on test substrate.In certain embodiments, internal gas flow induction element can be set extraly and laterally flow to the region on the substrate regions with relatively high sedimentation rate on test substrate with prevention process gas.It addition, outer gas stream induction element may be provided on the substrate regions with relatively high sedimentation rate on test substrate (908).
In sum, although this utility model is disclosed above with preferred embodiment, it being understood, however, that other embodiments can drop in the spirit and scope of the present utility model defined by appended claims.
Claims (20)
1. a gas diffusion component, including:
Backboard, has entrance in order to the place's of offer process gases to processing chamber；
Diffuser plate, comprises several opening, in order to allow described place process gases to flow into described process chamber；
Baffler, is arranged between described backboard and described diffuser plate, and described baffler comprises several opening；And
At least one air flow guide element, is arranged between described baffler and described backboard, is suitable to guide described process gas laterally to flow.
2. gas diffusion component as claimed in claim 1, it is characterised in that described at least one air flow guide element is suitable to the region that can receive relatively low deposition rate in other situations guiding described process gas laterally to flow towards surface.
3. gas diffusion component as claimed in claim 1, it is characterised in that described at least one air flow guide element is suitable to guide the region that can receive higher deposition rate in other situations of described process gas laterally flow far from surface.
4. gas diffusion component as claimed in claim 1, it is characterised in that described at least one air flow guide element comprises four the internal gas flow induction elements arranged around described entrance.
5. gas diffusion component as claimed in claim 4, it is characterised in that described internal gas flow induction element is suitable to guide SiOx to process gas and is laterally towards the region above the long limit of substrate.
6. gas diffusion component as claimed in claim 4, it is characterised in that described internal gas flow induction element is suitable to guide SiOx to process gas laterally away from the region above the corner of substrate.
7. gas diffusion component as claimed in claim 1, it is characterised in that described at least one air flow guide element is suitable to place's process gases of restriction side and flows out from the region that can receive higher deposition rate in other situations of surface.
8. gas diffusion component as claimed in claim 1, it is characterised in that described at least one air flow guide element comprises four the outer gas stream induction elements arranged around described entrance.
9. gas diffusion component as claimed in claim 8, it is characterised in that described four outer gas stream induction elements are suitable for and flow out from the field side above the central crossed diagonal of substrate limiting SiOx place process gases.
10. low temperature polycrystalline silicon processes a chamber system, including:
Process gas supply device；And
Pedestal, in order to support substrate；And
Gas diffusion component, including:
Backboard, has the entrance being coupled to described process gas supply device；
Diffuser plate, comprises several opening, in order to allow described place process gases to flow to described substrate；
Baffler, is arranged between described backboard and described diffuser plate, and described baffler comprises several opening；And
At least one air flow guide element, is arranged between described baffler and described backboard, it is adaptable to guide described process gas laterally to flow.
11. low temperature polycrystalline silicon as claimed in claim 10 processes chamber system, it is characterized in that, described at least one air flow guide element is suitable to the region that can receive relatively low deposition rate in other situations guiding described process gas laterally to flow towards described surface.
12. low temperature polycrystalline silicon as claimed in claim 10 processes chamber system, it is characterized in that, described at least one gas flowing induction element is suitable to guide the region that can receive higher deposition rate in other situations of surface described in described process gas laterally flow far from.
13. low temperature polycrystalline silicon as claimed in claim 10 processes chamber system, it is characterised in that described at least one air flow guide element comprises four the internal gas flow induction elements arranged around described entrance.
14. low temperature polycrystalline silicon as claimed in claim 13 processes chamber system, it is characterised in that described internal gas flow induction element is suitable to guide SiOx to process gas and is laterally towards the region above the long limit of described substrate.
15. low temperature polycrystalline silicon as claimed in claim 13 processes chamber system, it is characterised in that described internal gas flow induction element is suitable to guide SiOx to process gas laterally away from the region above the corner of described substrate.
16. low temperature polycrystalline silicon as claimed in claim 10 processes chamber system, it is characterised in that described at least one air flow guide element is suitable to place's process gases of restriction side and flows out from the region that can receive higher deposition rate in other situations of surface.
17. low temperature polycrystalline silicon as claimed in claim 10 processes chamber system, it is characterised in that described at least one air flow guide element comprises four the outer gas stream induction elements arranged around described entrance.
18. low temperature polycrystalline silicon as claimed in claim 17 processes chamber system, it is characterised in that described four outer gas stream induction elements are suitable for and flow out from the field side above the central crossed diagonal of substrate limiting SiOx place process gases.
19. make place's process gases inflow process an assembly for chamber, described assembly includes:
Multiple internal flow induction elements, the plurality of internal flow induction element is arranged around the gas access between backboard and baffler, in order to guide process gas to be laterally towards the region on test substrate with relatively low sedimentation rate above substrate regions.
20. assembly as claimed in claim 19, it is characterised in that:
The plurality of internal flow induction element is also set and laterally flows to the region on described test substrate with relatively high sedimentation rate above described substrate regions with prevention process gas.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261675791P | 2012-07-25 | 2012-07-25 | |
| US61/675,791 | 2012-07-25 | ||
| PCT/US2013/051572 WO2014018480A1 (en) | 2012-07-25 | 2013-07-23 | Process gas flow guides for large area plasma enhanced chemical vapor deposition systems and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205382207U true CN205382207U (en) | 2016-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201390000636.5U Expired - Fee Related CN205382207U (en) | 2012-07-25 | 2013-07-23 | Diffusion of gases subassembly, low temperature polycrystalline silicon are handled cavity system and are made process gas flow into subassembly of handling cavity |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20140030056A1 (en) |
| CN (1) | CN205382207U (en) |
| TW (1) | TWI657164B (en) |
| WO (1) | WO2014018480A1 (en) |
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|---|---|---|---|---|
| CN103777857A (en) * | 2012-10-24 | 2014-05-07 | 腾讯科技（深圳）有限公司 | Method and device for rotating video picture |
| USD756502S1 (en) | 2013-07-23 | 2016-05-17 | Applied Materials, Inc. | Gas diffuser assembly |
| CN105331952B (en) * | 2014-07-23 | 2019-04-23 | 北京北方华创微电子装备有限公司 | Inlet duct and semiconductor processing equipment |
| CN105331953B (en) * | 2014-07-23 | 2019-04-23 | 北京北方华创微电子装备有限公司 | Inlet duct and semiconductor processing equipment |
| JP6063431B2 (en) * | 2014-11-28 | 2017-01-18 | 京セラドキュメントソリューションズ株式会社 | Display device and display program |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5616026A (en) * | 1995-06-07 | 1997-04-01 | Rmo, Inc. | Orthondontic appliance and method of making the same |
| US5614026A (en) * | 1996-03-29 | 1997-03-25 | Lam Research Corporation | Showerhead for uniform distribution of process gas |
| US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| DE10043601A1 (en) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates |
| JPWO2004111297A1 (en) * | 2003-06-10 | 2006-07-20 | 東京エレクトロン株式会社 | Process gas supply mechanism, film forming apparatus, and film forming method |
| US7572337B2 (en) * | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
| KR100558922B1 (en) * | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | Apparatus and method for thin film deposition |
| KR101380861B1 (en) * | 2007-11-09 | 2014-04-03 | 참엔지니어링(주) | Plasma etching chamber |
| US8282735B2 (en) * | 2007-11-27 | 2012-10-09 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
| US8147614B2 (en) * | 2009-06-09 | 2012-04-03 | Applied Materials, Inc. | Multi-gas flow diffuser |
| JP5031910B2 (en) * | 2010-06-23 | 2012-09-26 | シャープ株式会社 | Vapor growth equipment |
| KR101306315B1 (en) * | 2011-01-11 | 2013-09-09 | 주식회사 디엠에스 | Apparatus for chemical vapor deposition |
-
2013
- 2013-07-23 US US13/948,232 patent/US20140030056A1/en not_active Abandoned
- 2013-07-23 TW TW102126324A patent/TWI657164B/en not_active IP Right Cessation
- 2013-07-23 WO PCT/US2013/051572 patent/WO2014018480A1/en active Application Filing
- 2013-07-23 CN CN201390000636.5U patent/CN205382207U/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20140030056A1 (en) | 2014-01-30 |
| WO2014018480A1 (en) | 2014-01-30 |
| TW201413049A (en) | 2014-04-01 |
| TWI657164B (en) | 2019-04-21 |
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