CN103489762A - Method for forming polycrystalline silicon thin film - Google Patents

Method for forming polycrystalline silicon thin film Download PDF

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Publication number
CN103489762A
CN103489762A CN201210238444.XA CN201210238444A CN103489762A CN 103489762 A CN103489762 A CN 103489762A CN 201210238444 A CN201210238444 A CN 201210238444A CN 103489762 A CN103489762 A CN 103489762A
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substrate
temperature
heating source
heated
degree celsius
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黄显雄
王文俊
张恒毅
刘锦璋
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Wintek Corp
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Wintek Corp
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/06—Silicon
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Abstract

The invention discloses a method for forming a polycrystalline silicon film, which comprises the following steps. First, a substrate is provided. Then, a heat treatment is performed. Then, a silicon film deposition process is performed to directly form a polysilicon film on the upper surface of the substrate. Therefore, the method has the advantages of shortening the process time, reducing the cost and improving the overall production efficiency.

Description

Form the method for polysilicon membrane
Technical field
The present invention relates to a kind of method that forms polysilicon membrane, particularly a kind ofly directly forms polysilicon membrane in substrate and need after film forming, not form the method for the formation polysilicon membrane of crystallization via laser annealing (laser annealing) again.
Background technology
In recent years, the application development of various flat-panel screens is rapid, and all kinds of daily necessitiess are TV, mobile phone, automobile or even refrigerator for example, the application that all visible and flat-panel screens is interosculated.And thin-film transistor (thin film transistor, TFT) be a kind of semiconductor subassembly that is widely used in the flat-panel screens technology, for example be applied in liquid crystal display (liquid crystal display, LCD), Organic Light Emitting Diode (organic light emitting diode, OLED) in the displays such as display and Electronic Paper (electronic paper, E-paper).
The thin-film transistor that the display industry is used at present mainly includes amorphous silicon film transistor (amorphous silicon TFT, a-Si TFT) and polycrystalline SiTFT (poly silicon TFT).Wherein amorphous silicon film transistor, owing to having advantages of that manufacturing process technology maturation and qualification rate are high, is still the main flow in the display industry at present.But amorphous silicon film transistor is subject to the impact of amorphous silicon semiconductor material self character, make its electron mobility (mobility) can't be significantly and effectively the adjustment by manufacturing process or component design improve, therefore can't meet the demand of high gauge display.Polycrystalline SiTFT is indebted to the characteristic of polycrystalline silicon material, has on electron mobility significantly and improves.The manufacture of general polysilicon membrane be first form after amorphous silicon membrane again via high temperature or high-octane processing for example laser annealing process to make the amorphous silicon membrane crystallization and obtain polysilicon membrane.Yet the processing recrystallized after film forming not only causes that manufacturing process time increases, cost rises and affect integral production efficiency, also have to become the problems such as film uniformity is not good and cause product to apply to be restricted when the large-sized substrates manufacturing process.
Summary of the invention
Main purpose of the present invention, a kind of method that forms polysilicon membrane is provided, by substrate being heated to the temperature that can generate polysilicon membrane, is carried out silicon deposited film technique to substrate simultaneously, in order to directly to form polysilicon membrane in substrate.
The invention provides a kind of method that forms polysilicon membrane, the method comprises the following steps.At first, provide a substrate.Then, carry out a heat treated.Then, carry out a silicon deposited film technique, in order to directly on a upper surface of substrate, to form a polysilicon membrane.
The invention provides a kind of method that forms polysilicon membrane, the method comprises the following steps.At first, provide a substrate.Substrate comprises a substrate body and a lattice matching layers, and lattice matching layers is arranged on substrate body.Then, carry out a heat treated.Then, carry out a silicon deposited film technique, in order to directly on a upper surface of substrate, to form a polysilicon membrane.
The accompanying drawing explanation
Fig. 1 and the method schematic diagram that Figure 2 shows that the formation polysilicon membrane of first preferred embodiment of the invention.
Figure 3 shows that the method schematic diagram of the formation polysilicon membrane of second preferred embodiment of the invention.
Figure 4 shows that the method schematic diagram of the formation polysilicon membrane of third preferred embodiment of the invention.
Figure 5 shows that the method schematic diagram of the formation polysilicon membrane of four preferred embodiment of the invention.
Figure 6 shows that the method schematic diagram of the formation polysilicon membrane of fifth preferred embodiment of the invention.
Figure 7 shows that the method schematic diagram of the formation polysilicon membrane of sixth preferred embodiment of the invention.
Fig. 8 and the method schematic diagram that Figure 9 shows that the formation polysilicon membrane of seventh preferred embodiment of the invention.
Figure 10 and the method schematic diagram that Figure 11 shows that the formation polysilicon membrane of eighth preferred embodiment of the invention.
Figure 12 shows that the method schematic diagram of the formation polysilicon membrane of ninth preferred embodiment of the invention.
Wherein, description of reference numerals is as follows:
110 substrate 110A upper surfaces
110B lower surface 110M substrate body
120 polysilicon membrane 220 polysilicon membranes
310 substrate 310A upper surfaces
310B lower surface 311 heating auxiliary layers
320 polysilicon membrane 420 polysilicon membranes
510 substrate 510A upper surfaces
510B lower surface 512 lattice matching layers
520 polysilicon membrane 620 polysilicon membranes
H heating source H1 master heating source
H2 auxiliary heating source RG reacting gas
S110 step S120 step
S130 step S510 step
S521 step S522 step
S530 step SS silicon source
Embodiment
Please refer to Fig. 1 and Fig. 2.Fig. 1 and the method schematic diagram that Figure 2 shows that the formation polysilicon membrane of first preferred embodiment of the invention.Wherein Fig. 1 is a flow chart.For convenience of description, each accompanying drawing of the present invention is only for illustrating easily to understand the present invention, and its detailed ratio can be adjusted according to the demand of design.As shown in Figures 1 and 2, the first preferred embodiment of the present invention provides a kind of method that forms polysilicon membrane, and the method comprises the following steps.At first, carry out step S110, a substrate 110 is provided, substrate 110 has a upper surface 110A and a lower surface 110B.In addition, the substrate 110 of the present embodiment preferably can comprise a substrate body 110M.Substrate body 110M preferably can comprise substrate of glass body, ceramic bases body or the formed substrate body of other applicable materials.Then, carry out step S120, carry out a heat treated.The heat treated of the present embodiment comprises utilizes a heating source H to be heated to above 450 degree Celsius to substrate 110, and preferably utilizes heating source H to be heated to above 500 degree Celsius to substrate 110.Further illustrate, the heating source H of the present embodiment preferably can comprise a main heating source H1 and an auxiliary heating source H2, but not as limit.Above-mentioned heat treated preferably can comprise utilizes main heating source H1 to be heated to one first temperature to substrate 110, and utilizes auxiliary heating source H2 to be heated to one second temperature to the upper surface 110A of substrate 110, but not as limit.In addition, the second temperature is preferably higher than the first temperature, and for instance, the first temperature is preferably higher than 200 degree Celsius, and the second temperature is higher than 450 degree Celsius, and the second temperature is preferably higher than 500 degree Celsius, but not as limit.Then, carry out a silicon deposited film technique in step S130, because the temperature of the upper surface 110A of substrate 110 has reached the temperature that can generate polysilicon membrane, therefore can directly on the upper surface 110A of substrate 110, form a polysilicon membrane 120.
As shown in Figure 2, the silicon deposited film optimal process of the present embodiment is a chemical vapour deposition (CVD) (chemical vapor deposition, CVD) technique plasma-enhanced chemical vapor deposition PECVD (plasma enhanced chemical vapor deposition for example, PECVD) technique, metal organic chemical vapor deposition (metal-organic chemical vapor deposition, MOCVD) technique or low-pressure chemical vapor deposition (low pressure physical vapor deposition, LPCVD) technique, but not as limit.The source of silicon is provided by passing into a reacting gas RG, in order to the upper surface 110A in substrate 110, carries out silicon deposited film.For instance, in the silicon deposited film technique of the present embodiment, reacting gas RG preferably can comprise silane (silane, SiH 4) or dichlorosilane (SiH 2cl 2), utilize silane or dichlorosilane are dissociated and can in substrate 110, carry out silicon deposited film.Because the upper surface 110A of substrate 110 is heated to the temperature that can generate polysilicon membrane by auxiliary heating source H2, therefore can directly at the upper surface 110A of substrate 110, form polysilicon membrane 120 and need after film forming, not carry out for example laser annealing processing of other crystallization processing, therefore the method for the formation polysilicon membrane of the present embodiment can have advantages of the process time of shortening, reduces costs and improve integral production efficiency.In addition, because the method for the formation polysilicon membrane of the present embodiment is directly to form polysilicon membrane 120 in the thin film deposition mode, therefore the good and applicable characteristic in large-sized substrates of film uniformity is also arranged into.
Also please note, in the method for the formation polysilicon membrane of the present embodiment, except can before silicon deposited film technique, utilizing auxiliary heating source H2 to be heated to the second temperature to the upper surface 110A of substrate 110, also can in initial stage of silicon deposited film technique or other processes, utilize auxiliary heating source H2 to continue the silicon thin film of upper surface 110A and deposition is heated, in order to strengthen the crystalline quality of polysilicon membrane 120.In addition, the auxiliary heating source H2 of the present embodiment preferably can comprise there is high-octane light (light source) heating source, ion beam (ion beam) heating source, electron beam (electron beam) heating source or filament heating source, and main heating source H1 preferably can comprise susceptor (susceptor) heating source, radio frequency (radio frequency, RF) heating source or infrared ray (infrared, IR) heating source, but the present invention can optionally not use other main heating source H1 that are applicable to and auxiliary heating source H2 to reach required heating effect as limit.Because the mode of heating of the present embodiment is mainly that upper surface 110A to substrate 110 is heated to second temperature that can generate polysilicon membrane, and other parts of substrate 110 can not need to reach the second temperature, therefore the method for the formation polysilicon membrane of the present embodiment can be comparatively loose for the thermal endurance requirement of substrate 110.
Hereinafter will implement the sample state for the difference of the method for formation polysilicon membrane of the present invention and describe, and be simplified illustration, and below illustrate that different places is described in detail mainly for each embodiment, and no longer identical part is repeated.In addition, in various embodiments of the present invention, identical assembly is indicated with identical label, in order to convenient, between each embodiment, checks one against another.
Please refer to Fig. 3, and please in the lump with reference to figure 1.Figure 3 shows that the method schematic diagram of the formation polysilicon membrane of second preferred embodiment of the invention.As shown in Fig. 3 and Fig. 1, different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the first preferred embodiment be in, the silicon deposited film optimal process of the present embodiment is a physical vapour deposition (PVD) (physical vapor deposition, PVD) technique, by a silicon source SS for example the silicon target material carry out sputter coating (sputtering), carry out silicon deposited film in order to the upper surface 110A in substrate 110.Because the upper surface 110A of substrate 110 is heated to second temperature that can generate polysilicon membrane by auxiliary heating source H2, therefore can directly at the upper surface 110A of substrate 110, form a polysilicon membrane 220 and need after film forming, not carry out other crystallization processing.The method of the formation polysilicon membrane of the present embodiment is except the form difference of silicon deposited film technique, and the feature of remaining each parts, material behavior and mode of heating are similar to above-mentioned the first preferred embodiment, therefore at this and repeat no more.What deserves to be explained is, in the method for the formation polysilicon membrane of the present embodiment, except can before silicon deposited film technique, utilizing auxiliary heating source H2 to be heated to the second temperature to the upper surface 110A of substrate 110, also can in initial stage of silicon deposited film technique or other processes, utilize auxiliary heating source H2 to continue the silicon thin film of upper surface 110A and deposition is heated, in order to strengthen the crystalline quality of polysilicon membrane 220.
Please refer to Fig. 4.Figure 4 shows that the method schematic diagram of the formation polysilicon membrane of third preferred embodiment of the invention.As shown in Figure 4, in the present embodiment, the silicon deposited film optimal process can comprise and utilizes a reacting gas RG to form polysilicon membrane 120 on the upper surface 110A in substrate 110.Reacting gas RG preferably can comprise silane or dichlorosilane, but not as limit.Different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the first preferred embodiment be in, the heat treated of the present embodiment preferably can comprise utilizes main heating source H1 substrate 110 is heated to the first temperature and utilizes auxiliary heating source H2 to be heated to the second temperature to reacting gas RG.The second temperature is preferably higher than the first temperature, and for instance, the first temperature is preferably higher than 200 degree Celsius, and the second temperature is higher than 450 degree Celsius, and the second temperature is preferably higher than 500 degree Celsius, but not as limit.Because reacting gas RG is heated to the temperature that can generate polysilicon membrane by auxiliary heating source H2, therefore can directly at the upper surface 110A of substrate 110, form polysilicon membrane 120.In addition, the auxiliary heating source H2 of the present embodiment preferably can comprise having high-octane smooth heating source, beam heating source, electron beam heating or filament heating source, but not as limit.The method of the formation polysilicon membrane of the present embodiment is except the mode of heat treated, and the feature of remaining each parts and material behavior are similar to above-mentioned the first preferred embodiment, therefore at this and repeat no more.What deserves to be explained is, in other preferred embodiments of the present invention, also can optionally utilize auxiliary heating source H2 to be heated to the second temperature to upper surface 110A and the reacting gas RG of substrate 110, in order to the crystalline quality of further reinforcement polysilicon membrane 120.
Please refer to Fig. 5.Figure 5 shows that the method schematic diagram of the formation polysilicon membrane of four preferred embodiment of the invention.As shown in Figure 5, the silicon deposited film optimal process of the present embodiment is a physical gas-phase deposition, by silicon source SS for example the silicon target material carry out sputter coating, carry out silicon deposited film in order to the upper surface 110A in substrate 110.Different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the second preferred embodiment be in, the heat treated of the present embodiment preferably can comprise utilize main heating source H1 to be heated to the first temperature to substrate 110 and utilize H2Dui Gui source, auxiliary heating source SS not yet the state before upper surface 110A film forming be heated to the second temperature.The second temperature is preferably higher than the first temperature, and for instance, the first temperature is preferably higher than 200 degree Celsius, and the second temperature is higher than 450 degree Celsius, and the second temperature is preferably higher than 500 degree Celsius, but not as limit.Due to silicon source SS not yet the state before upper surface 110A film forming by auxiliary heating source H2, be heated to the temperature that can generate polysilicon membrane, therefore can be directly at the upper surface 110A of substrate 110, form polysilicon membrane 220.In addition, the auxiliary heating source H2 of the present embodiment preferably can comprise having high-octane smooth heating source, beam heating source, electron beam heating or filament heating source, but not as limit.The method of the formation polysilicon membrane of the present embodiment is except the mode of heat treated, and the feature of remaining each parts and material behavior are similar to above-mentioned the second preferred embodiment, therefore at this and repeat no more.What deserves to be explained is, in other preferred embodiments of the present invention, also can optionally utilize simultaneously auxiliary heating source H2 to the upper surface 110A of substrate 110 and silicon source SS not yet the state before upper surface 110A film forming be heated to the second temperature, in order to the crystalline quality of further reinforcement polysilicon membrane 220.
Please refer to Fig. 6.Figure 6 shows that the method schematic diagram of the formation polysilicon membrane of fifth preferred embodiment of the invention.As shown in Figure 6, different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the first preferred embodiment be in, the substrate 310 of the present embodiment comprises a substrate body 110M and a heating auxiliary layer 311, and heating auxiliary layer 311 is arranged on substrate body 110M.Substrate 310 has a upper surface 310A and a lower surface 310B.In other words, heating auxiliary layer 311 can be considered the upper surface 310A of substrate 310 back to the surface of substrate body 110M.Heating auxiliary layer 311 is the efficiencies of heating surface that strengthen auxiliary heating source H2, further improves the related process situation.In addition, heating auxiliary layer 311 is to be formed by a material with high heat absorption efficiency, preferably can comprise the materials such as graphite, chromium oxide or molybdenum, but not as limit.Setting by heating auxiliary layer 311, can make the upper surface 310A of substrate 310 be heated to second temperature that can generate polysilicon membrane by auxiliary heating source H2 efficiently, therefore can directly at the upper surface 310A of substrate 310, form a polysilicon membrane 320 and need after film forming, not carry out other crystallization processing.
Please refer to Fig. 7.Figure 7 shows that the method schematic diagram of the formation polysilicon membrane of sixth preferred embodiment of the invention.As shown in Figure 7, different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the 5th preferred embodiment be in, the silicon deposited film optimal process of the present embodiment is a physical gas-phase deposition, by a silicon source SS for example the silicon target material carry out sputter coating, carry out silicon deposited film in order to the upper surface 310A in substrate 310.In addition, setting by heating auxiliary layer 311, can make the upper surface 310A of substrate 310 be heated to second temperature that can generate polysilicon membrane by auxiliary heating source H2 efficiently, therefore can directly at the upper surface 310A of substrate 310, form a polysilicon membrane 420 and need after film forming, not carry out other crystallization processing.
Please refer to Fig. 8 and Fig. 9.Fig. 8 and the method schematic diagram that Figure 9 shows that the formation polysilicon membrane of seventh preferred embodiment of the invention.Wherein Fig. 8 is a flow chart.As shown in Fig. 8 and Fig. 9, the 7th preferred embodiment of the present invention provides a kind of method that forms polysilicon membrane, and the method comprises the following steps.At first, carry out step S510, a substrate 510 is provided, substrate 510 has a upper surface 510A and a lower surface 510B.In addition, the substrate 510 of the present embodiment preferably can comprise a substrate body 110M and a lattice matching layers 512, and lattice matching layers 512 is arranged on substrate body 110M.In other words, lattice matching layers 512 can be considered the upper surface 510A of substrate 510 back to the surface of substrate body 110M.In addition, lattice matching layers 512 preferably can comprise for example zirconia (zirconium oxide, ZrO of macromolecular material with lattice direction or metal oxide materials 2), cerium oxide (cerium oxide, CeO 2), praseodymium oxide (praseodymium oxide, PrO 2) or yittrium oxide (yttrium oxide, Y 2o 3), but not as limit.Then, carry out step S521, carry out a heat treated.Then, carry out a silicon deposited film technique in step S530, in order to directly on the upper surface 510A of substrate 510, to form a polysilicon membrane 520.In the present embodiment, heat treated preferably can comprise and utilizes a main heating source H1 to be heated to one first temperature to substrate 510.What deserves to be explained is, because the substrate 510 of the present embodiment has lattice matching layers 512, get final product between 250 degree Celsius at 150 degree Celsius therefore the first temperature preferably can be situated between, but not as limit.As shown in Figure 9, the silicon deposited film optimal process of the present embodiment is for example plasma-enhanced chemical vapor deposition PECVD technique, metal organic chemical vapor deposition technique or low-pressure chemical vapor deposition process of a chemical vapor deposition method, but not as limit.
Please refer to Figure 10 and Figure 11.Figure 10 and the method schematic diagram that Figure 11 shows that the formation polysilicon membrane of eighth preferred embodiment of the invention.Wherein Figure 10 is a flow chart.As shown in Figure 10 and Figure 11, different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the 7th preferred embodiment be in, the present embodiment is to carry out step S522 after step S510, carries out a heat treated.Above-mentioned heat treated comprises utilizes a heating source H to be heated to above 250 degree Celsius to substrate 510.In the present embodiment, heating source H preferably can comprise a main heating source H1 and an auxiliary heating source H2, and heat treated preferably can comprise and utilizes main heating source H1 to be heated to one first temperature to substrate 510, and utilize auxiliary heating source H2 to be heated to one second temperature to the upper surface 510A of substrate 510, but not as limit.In addition, the second temperature is preferably higher than the first temperature, and for instance, the first temperature is preferably higher than 150 degree Celsius, and the second temperature is preferably higher than 250 degree Celsius, but not as limit.Then, carry out a silicon deposited film technique in step S530, in order to directly on the upper surface 110A of substrate 110, to form a polysilicon membrane 620.
The method of the formation polysilicon membrane of the present embodiment is except also utilizing auxiliary heating source H2 heated the upper surface 510A of substrate 510, the feature of remaining each parts, material behavior and silicon deposited film technique are similar to above-mentioned the 7th preferred embodiment, therefore at this and repeat no more.What deserves to be explained is, in the method for the formation polysilicon membrane of the present embodiment, except can before silicon deposited film technique, utilizing auxiliary heating source H2 to be heated to the second temperature to upper surface 510A and the lattice matching layers 512 of substrate 510, also can in initial stage of silicon deposited film technique or other processes, utilize auxiliary heating source H2 to continue the silicon thin film of upper surface 510A, lattice matching layers 512 and deposition is heated, in order to strengthen the crystalline quality of polysilicon membrane 620.In addition, the auxiliary heating source H2 of the present embodiment preferably can comprise having high-octane smooth heating source, beam heating source, electron beam heating or filament heating source, and main heating source H1 preferably can comprise susceptor heating source, radio frequency heating source or infrared heating source, but the present invention can optionally not use other main heating source H1 that are applicable to and auxiliary heating source H2 to reach required heating effect as limit.Because the substrate 510 of the present embodiment has lattice matching layers 512, therefore the heating-up temperature for the upper surface 510A of substrate 510 in the present embodiment can further reduce, also can make the method for the formation polysilicon membrane of the present embodiment require for the thermal endurance of substrate 510 can be looser.
Please refer to Figure 12.Figure 12 shows that the method schematic diagram of the formation polysilicon membrane of ninth preferred embodiment of the invention.As shown in figure 12, in the present embodiment, the silicon deposited film optimal process can comprise and utilizes a reacting gas RG to form polysilicon membrane 620 on the upper surface 510A in substrate 510.Reacting gas RG preferably can comprise silane or dichlorosilane, but not as limit.Different between the method for the formation polysilicon membrane of the present embodiment and above-mentioned the 8th preferred embodiment be in, the heat treated of the present embodiment preferably can comprise utilizes main heating source H1 substrate 510 is heated to the first temperature and utilizes auxiliary heating source H2 to be heated to the second temperature to reacting gas RG.The second temperature is preferably higher than the first temperature, and for instance, the first temperature is preferably higher than 150 degree Celsius, and the second temperature is preferably higher than 250 degree Celsius, but not as limit.Because substrate 510 has lattice matching layers 512, therefore temperature that can be lower heating reacting gas RG can directly form polysilicon membrane 620 at the upper surface 510A of substrate 510.In addition, the auxiliary heating source H2 of the present embodiment preferably can comprise having high-octane smooth heating source, beam heating source, electron beam heating or filament heating source, but not as limit.The method of the formation polysilicon membrane of the present embodiment is except the mode of heat treated, and the feature of remaining each parts and material behavior are similar to above-mentioned the 8th preferred embodiment, therefore at this and repeat no more.What deserves to be explained is, in other preferred embodiments of the present invention, also can optionally utilize auxiliary heating source H2 to be heated to the second temperature to upper surface 510A and the reacting gas RG of substrate 510, in order to the crystalline quality of further reinforcement polysilicon membrane 620.
In sum, utilization of the present invention is heated to the temperature that can generate polysilicon membrane to substrate or/and manufacturing process environment, substrate is carried out to silicon deposited film technique, in order to directly to form polysilicon membrane in substrate, therefore can not need after film forming, carry out again other crystallization processing simultaneously.Therefore the method for formation polysilicon membrane of the present invention can have advantages of the process time of shortening, reduce costs and improve integral production efficiency.In addition, the method for formation polysilicon membrane of the present invention is also utilized heating auxiliary layer or lattice matching layers is set in substrate, further improves for the efficiency of heating surface of substrate surface and the crystalline quality that improves polysilicon membrane.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (33)

1. a method that forms polysilicon membrane, is characterized in that, comprising:
One substrate is provided, and this substrate has a upper surface;
Carry out a heat treated; And
Carry out a silicon deposited film technique, in order to directly on this upper surface of this substrate, to form a polysilicon membrane.
2. method according to claim 1, is characterized in that, this heat treated comprises utilizes a heating source to be heated to above 450 degree Celsius to this substrate.
3. method according to claim 1, is characterized in that, this heat treated comprises utilizes a heating source to be heated to above 500 degree Celsius to this substrate.
4. method according to claim 1, is characterized in that, this silicon deposited film technique comprises utilizes a reacting gas to form this polysilicon membrane on this upper surface of this substrate.
5. method according to claim 4, is characterized in that, this reacting gas comprises silane or dichlorosilane.
6. method according to claim 4, is characterized in that, this heat treated comprises:
Utilize a main heating source to be heated to one first temperature to this substrate; And
Utilize an auxiliary heating source to be heated to one second temperature to this reacting gas.
7. method according to claim 6, is characterized in that, this second temperature is higher than this first temperature.
8. method according to claim 6, is characterized in that, this first temperature is higher than 200 degree Celsius, and this second temperature is higher than 450 degree Celsius.
9. method according to claim 6, is characterized in that, this second temperature is higher than 500 degree Celsius.
10. method according to claim 6, is characterized in that, this auxiliary heating source comprises light heating source, beam heating source, electron beam heating or filament heating source.
11. method according to claim 1, is characterized in that, this heat treated comprises:
Utilize a main heating source to be heated to one first temperature to this substrate; And
Utilize an auxiliary heating source to be heated to one second temperature to this upper surface of this substrate.
12. method according to claim 11, is characterized in that, this second temperature is higher than this first temperature.
13. method according to claim 11, is characterized in that, this first temperature is higher than 200 degree Celsius, and this second temperature is higher than 450 degree Celsius.
14. method according to claim 11, is characterized in that, this second temperature is higher than 500 degree Celsius.
15. method according to claim 11, is characterized in that, this auxiliary heating source comprises light heating source, beam heating source, electron beam heating or filament heating source.
16. method according to claim 1, is characterized in that, this silicon deposited film technique comprises chemical vapor deposition method or physical gas-phase deposition.
17. method according to claim 1, is characterized in that, this substrate comprises a substrate body and a heating auxiliary layer, and this heating auxiliary layer is arranged on this substrate body.
18. method according to claim 17, is characterized in that, this heating auxiliary layer comprises graphite, chromium oxide or molybdenum.
19. a method that forms polysilicon membrane, is characterized in that, comprising:
One substrate is provided, and this substrate comprises a substrate body and a lattice matching layers, and wherein this lattice matching layers is arranged on this substrate body;
Carry out a heat treated; And
Carry out a silicon deposited film technique, in order to directly on a upper surface of this substrate, to form a polysilicon membrane.
20. method according to claim 19, is characterized in that, this heat treated comprises utilizes a heating source to be heated to above 250 degree Celsius to this substrate.
21. method according to claim 19, is characterized in that, this lattice matching layers comprises macromolecular material or the metal oxide materials with lattice direction.
22. method according to claim 19, is characterized in that, this silicon deposited film technique comprises utilizes a reacting gas to form this polysilicon membrane on this upper surface of this substrate.
23. method according to claim 22, is characterized in that, this reacting gas comprises silane or dichlorosilane.
24. method according to claim 22, is characterized in that, this heat treated comprises:
Utilize a main heating source to be heated to one first temperature to this substrate; And
Utilize an auxiliary heating source to be heated to one second temperature to this reacting gas.
25. method according to claim 24, is characterized in that, this second temperature is higher than this first temperature.
26. method according to claim 24, is characterized in that, this first temperature is higher than 150 degree Celsius, and this second temperature is higher than 250 degree Celsius.
27. method according to claim 24, is characterized in that, this auxiliary heating source comprises light heating source, beam heating source, electron beam heating or filament heating source.
28. method according to claim 19, is characterized in that, the mode that this substrate is heated comprises:
Utilize a main heating source to be heated to one first temperature to this substrate; And
Utilize an auxiliary heating source to be heated to one second temperature to this upper surface of this substrate.
29. method according to claim 28, is characterized in that, this second temperature is higher than this first temperature.
30. method according to claim 28, is characterized in that, this first temperature is higher than 150 degree Celsius, and this second temperature is higher than 250 degree Celsius.
31. method according to claim 28, is characterized in that, this auxiliary heating source comprises light heating source, beam heating source, electron beam heating or filament heating source.
32. method according to claim 19, the mode wherein this substrate heated comprises utilizes a main heating source to be heated to one first temperature to this substrate, and this first temperature is to be situated between at 150 degree Celsius between 250 degree Celsius.
33. method according to claim 19, is characterized in that, this silicon deposited film technique comprises plasma-enhanced chemical vapor deposition PECVD technique, metal organic chemical vapor deposition technique or low-pressure chemical vapor deposition process.
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