CN205303449U - High pixel image sensor packaging structure of ultra -thin type - Google Patents
High pixel image sensor packaging structure of ultra -thin type Download PDFInfo
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- CN205303449U CN205303449U CN201620019762.0U CN201620019762U CN205303449U CN 205303449 U CN205303449 U CN 205303449U CN 201620019762 U CN201620019762 U CN 201620019762U CN 205303449 U CN205303449 U CN 205303449U
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- image sensor
- divider wall
- wall base
- rigid
- high pixel
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Abstract
The utility model provides a high pixel image sensor packaging structure of ultra -thin type, it includes soft or hard bond substrate (1), soft or hard bond substrate (1) facing is equipped with image sensor (2) that are located the middle part and is located border position electric capacity resistance (3), still be equipped with divider wall base (4) on soft or hard bond substrate (1), divider wall base (4) bottom is equipped with first vacancy (41) that hold image sensor respectively and holds electric capacitance -resistance second vacancy (42) corresponding to the position of image sensor (2) on the soft or hard bond substrate (1) and electric capacity resistance (3), image sensor (2) and electric capacity resistance (3) are separated by divider wall (43), glass piece (5) are openly installed in divider wall base (4), still be equipped with connector (6) of directly drawing forth on soft or hard bond substrate (1). The utility model discloses can effectively prevent the pollution to image sensor, the realization can be maintained, improves encapsulation quality and yields.
Description
Technical field
This utility model relates to the PLCC with rigid-flex substrate and extends encapsulation technology field, particularly relates to a kind of ultrathin high pixel image sensor package.
Background technology
The application of the forward type CMOS of currently available technology concentrates on below 5,000,000 pixels, application along with wisdom mobile phone etc., growing with each passing hour of forward type (Front-facing) technology, the technological break-through of pixel microminiaturization and advanced process, drive the market of CMOS high pixel, and the high pixel CMOS encapsulation of wafer-level package (CSP:ChipScalePackaged) has defect and the bottleneck of technology, chip on board (COB:ChipOnBoard) encapsulation must be trend.
But, during current most high pixel CMOS COB encapsulating structure, capacitance resistance and CMOS are placed in together, centre does not adopt quarantine measures, capacitance resistance passive device has tin sweat(ing) after SMT surface mount process, scaling powder, and tin sweat(ing), scaling powder is easy to go to above CMOS, clean and extremely difficult maybe cannot clean, so can produce the bad phenomenon such as stain in image output, optical center is not offset during plus structural design, the inclinations of sensor etc. consider to put in place, photographic head module group assembling end is assembled difficulty by the product encapsulated, image is easily made to produce dark angle, the monolateral resolution of image obscures bad, image quality cannot be ensured, encapsulation yields reduces, and pre-structure cannot keep in repair.
In view of this, special proposition this utility model, to solve above-mentioned technical problem.
Utility model content
For above-mentioned existing technology, technical problem to be solved in the utility model is to provide a kind of pollution to image sensor that can effectively prevent, and improves the high pixel image sensor package of ultrathin type of encapsulation quality and yields.
In order to solve above-mentioned technical problem, this utility model provides a kind of ultrathin high pixel image sensor package, it includes rigid-flex substrate, described rigid-flex substrate is pasted with the image sensor being positioned at middle part and the capacitance resistance being positioned at marginal position, described rigid-flex substrate is additionally provided with divider wall base, described divider wall base bottom is respectively equipped with, corresponding to the image sensor on rigid-flex substrate and capacitance-resistance position, the first room holding image sensor and holds capacitance-resistance second room, described image sensor and capacitance resistance are isolated wall and separate, described divider wall base front surface is provided with sheet glass, described rigid-flex substrate is additionally provided with the adapter directly led out.
Further improvement of the utility model is, described second room caves inward the concave shape formed in by the outer wall of divider wall base.
Further improvement of the utility model is, described divider wall base front surface is provided with the trivacancy for sticking glass sheet.
Further improvement of the utility model is, described divider wall base bottom and rigid-flex substrate junction are provided with the first gum box, are provided with the second gum box with sheet glass junction bottom described trivacancy.
Further improvement of the utility model is, described image sensor is CMOS.
Compared with prior art; this utility model adopts divider wall to separate image sensor and capacitance resistance; simple and practical; can be effectively isolated in outside image sensor dirty to tin sweat(ing), scaling powder, chip etc.; protect the cleaning of image sensor in welding process; preventing the pollution to image sensor, improve encapsulation quality and yields, disassembled glass keeps in repair; The adapter directly led out also can reduce bis-back welding process of SMT at module end; Adopt rigid-flex substrate can reduce module height overall. This utility model can effectively prevent the pollution to image sensor, it is achieved can keep in repair, and improves encapsulation quality and yields.
Accompanying drawing explanation
Fig. 1 is perspective view of the present utility model;
Fig. 2 is the perspective view after this utility model removes carrying device for products;
Fig. 3 is this utility model DAM front schematic view;
Fig. 4 is this utility model DAM reverse side schematic diagram;
Fig. 5 is this utility model flow chart.
In figure, each component names is as follows:
1 rigid-flex substrate;
2 image sensors;
3 capacitance resistances;
4 divider wall bases;
41 first rooms;
42 second rooms;
43 divider walls;
44 trivacancys;
45 first gum boxs;
46 second gum boxs;
5 sheet glass;
6 adapters.
Detailed description of the invention
Illustrate below in conjunction with accompanying drawing and this utility model is further illustrated by detailed description of the invention.
As shown in Figures 1 to 5, a kind of ultrathin high pixel image sensor package, it includes a rigid-flex substrate 1, described rigid-flex substrate 1 is pasted with the image sensor 2 being positioned at middle part and the capacitance resistance 3 being positioned at marginal position, described rigid-flex substrate 1 is additionally provided with divider wall base 4, it is respectively equipped with the first room 41 holding image sensor bottom described divider wall base 4 corresponding to the position of the image sensor 2 on rigid-flex substrate 1 and capacitance resistance 3 and holds capacitance-resistance second room 42, described image sensor 2 and capacitance resistance 3 are isolated wall 43 and separate, described divider wall base 4 front is provided with sheet glass 5, described rigid-flex substrate 1 is additionally provided with the adapter 6 directly led out.Rigid-flex substrate 1 of the present utility model has the attachment district of two place's capacitance resistances 3, correspondingly divider wall base 4 be provided with two places hold capacitance-resistance second rooms 42 corresponding with the attachment district of two place's capacitance resistances 3. Rigid-flex substrate 1 directly leads out adapter 6.
Specifically, as shown in Figures 1 to 5, described second room 42 caves inward the concave shape formed in by the outer wall of divider wall base 4. Described divider wall base 4 front is provided with the trivacancy 44 for sticking glass sheet 5. It is provided with the first gum box 45 with rigid-flex substrate 1 junction bottom described divider wall base 4, bottom described trivacancy 44, is provided with the second gum box 46 with sheet glass 5 junction. Described image sensor 2 is CMOS.
Manufacture in order to simplify divider wall base 4 is processed, and it is all caved inward the concave shape formed by the outer wall of divider wall base 4 that two places hold capacitance-resistance second rooms 42. Namely the first room 41 of accommodation image sensor of the present utility model is the region of an all round closure, and it is the region outwards opened that two places hold capacitance-resistance second room 42.
When installing sheet glass 5, generally use glue and be bonded on divider wall base 4, owing to extruding causes glue to overflow from the junction of sheet glass 5 with divider wall base 4 during in order to avoid stickup, flow on the image sensor 2 to rigid-flex substrate 1, image sensor 2 is polluted, in the present embodiment, described divider wall base 4 front is provided with the trivacancy 44 for sticking glass sheet 5, is provided with the second gum box 46 with sheet glass 5 junction bottom described trivacancy 44. Glue is coated in the second gum box 46, is blocked by sidewall and cannot spill on image sensor 2, and can flow to the less position of glue along the second gum box 46 during extruding, and the stickup making sheet glass 5 is more uniform. It is provided with the first gum box 45 with rigid-flex substrate 1 junction, it is ensured that it is thick that divider wall base 4 and rigid-flex substrate 1 junction increase glue, increases drawing dynamics bottom described divider wall base 4.
Adopt the mode that direct locator card fills to directly lead out adapter 6, reduce bis-back welding process of SMT at module end, reduce processing procedure work and namely promote processing procedure yields. Photographic head is installed on the front of fixing divider wall base 4.
Ultrathin type of the present utility model high pixel image sensor package includes following 4 steps when encapsulation:
1., after being arranged on rigid-flex substrate 1 by two place's capacitance resistances 3 and adapter 6, CMOS is mounted on image sensor;
2. carry out gold thread between pair CMOS with rigid-flex substrate 1 to weld;
3. on divider wall base 4, mount upper glass plate 5;
4. installing the divider wall base 4 with sheet glass 5 on the rigid-flex substrate 1 mount CMOS, divider wall 43 makes to keep apart between CMOS and two place's capacitance resistances 3, completes to assemble.
In installation process; after CMOS mounts; install immediately and isolate with the divider wall base 4 with sheet glass 5; make the scolding tin of two place's capacitance resistances 3, bead can not enter the space at CMOS place; protect the cleaning of CMOS, improve package quality.
This utility model beneficial effect compared with prior art:
1. divider wall base 4 adopts curtain wall structure, is provided with divider wall 43, it is possible to the isolation of capacitance resistance and CMOS, simple and practical, it is possible to effectively tin sweat(ing), scaling powder, and chip etc. is dirty to be isolated in outside CMOS;
Even if 2. the design of divider wall base 4 makes contaminative bad, it is also possible to keep in repair by disassembling glass, possess maintainability, and when back segment installs fixing camera, optical axis is more easy to guarantee;
3. adapter 6 adopts direct locator card dress mode, reduces bis-reflows of SMT at module end;
4. adopt rigid-flex substrate, it is possible to reduce module height overall, accomplish ultra-thin.
The utility model has the advantage of; this utility model adopts divider wall to separate image sensor and capacitance resistance; simple and practical; can be effectively isolated in outside image sensor dirty to tin sweat(ing), scaling powder, chip etc.; protect the cleaning of image sensor in welding process; preventing the pollution to image sensor, improve encapsulation quality and yields, disassembled glass keeps in repair; The adapter directly led out also can reduce bis-back welding process of SMT at module end; Adopt rigid-flex substrate can reduce module height overall. This utility model can effectively prevent the pollution to image sensor, it is achieved can keep in repair, and improves encapsulation quality and yields.
Above content is in conjunction with concrete preferred implementation further detailed description of the utility model, it is impossible to assert that of the present utility model being embodied as is confined to these explanations. For this utility model person of an ordinary skill in the technical field, without departing from the concept of the premise utility, it is also possible to make some simple deduction or replace, protection domain of the present utility model all should be considered as belonging to.
Claims (5)
1. the high pixel image sensor package of ultrathin type, it is characterized in that: include rigid-flex substrate (1), described rigid-flex substrate (1) is pasted with the image sensor (2) being positioned at middle part and the capacitance resistance (3) being positioned at marginal position, described rigid-flex substrate (1) is additionally provided with divider wall base (4), described divider wall base (4) bottom is respectively equipped with the first room (41) holding image sensor corresponding to the position of the image sensor (2) on rigid-flex substrate (1) and capacitance resistance (3) and holds capacitance-resistance second room (42), described image sensor (2) and capacitance resistance (3) are isolated wall (43) and separate, described divider wall base (4) front is provided with sheet glass (5), described rigid-flex substrate (1) is additionally provided with the adapter (6) directly led out.
2. the high pixel image sensor package of ultrathin type according to claim 1, it is characterised in that: described second room (42) caves inward the concave shape formed in by the outer wall of divider wall base (4).
3. the high pixel image sensor package of ultrathin type according to claim 1, it is characterised in that: described divider wall base (4) front is provided with the trivacancy (44) for sticking glass sheet (5).
4. the high pixel image sensor package of ultrathin type according to claim 3, it is characterized in that: described divider wall base (4) bottom is provided with the first gum box (45) with rigid-flex substrate (1) junction, described trivacancy (44) bottom is provided with the second gum box (46) with sheet glass (5) junction.
5. the high pixel image sensor package of ultrathin type according to claim 1, it is characterised in that: described image sensor (2) is CMOS.
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CN201620019762.0U CN205303449U (en) | 2016-01-07 | 2016-01-07 | High pixel image sensor packaging structure of ultra -thin type |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019206060A1 (en) * | 2018-04-23 | 2019-10-31 | 东莞旺福电子有限公司 | Novel high pixel image sensor |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019206060A1 (en) * | 2018-04-23 | 2019-10-31 | 东莞旺福电子有限公司 | Novel high pixel image sensor |
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