CN205248250U - Low inductance light and thin type power module - Google Patents
Low inductance light and thin type power module Download PDFInfo
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- CN205248250U CN205248250U CN201521083744.0U CN201521083744U CN205248250U CN 205248250 U CN205248250 U CN 205248250U CN 201521083744 U CN201521083744 U CN 201521083744U CN 205248250 U CN205248250 U CN 205248250U
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Abstract
The utility model relates to a low inductance light and thin type power module, including the shell, the circuit of semiconductor chip, power terminal and the control terminal constitution of welding on covering the cermet base plate, the screwed cylinder is established for the hole to the power terminal, and the bottom of cylinder is fixed on covering the cermet base plate, be equipped with horizontal and vertical crossing blend stop in the conch wall of shell, the blend stop lower part is equipped with at least one spacing post, cover cermet substrate connection in the shell bottom, spacing capital on the blend stop is on covering the cermet base plate, it has soft silicon gel layer to annotate in the shell, produced release of stress when through -hole that the shell was equipped with all around at the conch wall is used for silicon gel layer inflation and shrink, each power terminal passes silicon gel layer with each control terminal, epoxy layer and shell, blend stop and each power terminal in the shell solidify into overall structure with each control terminal. The utility model discloses have lower lead wire stray inductance and thermal resistance, emergence that the junction that can stop the terminal and cover the cermet base plate drops.
Description
Technical field
The utility model relates to a kind of low inductance light and thin type power model, belongs to power model manufacturing technology field.
Background technology
Power half guide module is for controller and the electric vehicle controller etc. of inverter type welder, various Switching Power Supplies, and its Main Function is to change the direct current of input into three-phase alternating current output. And power semiconductor modular is one or more driver elements and the work of one or more power model composition three-phase circuit.
Current power model mainly contains two kinds of structures, and a kind of height of power model of structure is in 34mm left and right, and the height of the power model of another kind of structure is in 17mm left and right. Height comprises copper coin in the module of 34mm, covers cermet substrate, semiconductor chip, device and power terminal, control terminal and shell, semiconductor chip, device power terminal and control terminal are welded on and cover on cermet substrate and form main circuit, power terminal passes the power terminal hole on the cover plate on shell, after being bended, power terminal is stuck on the nut seat of shell, this power terminal one end is weldingly fixed on to be covered on cermet substrate, the other end is vacant state, in vibration environment, easily cause the stiff end of power terminal to come off. Some power terminals can adopt multiple bending structures for this reason, and absorb and alleviate the impulsive force that vibrations cause, the risk coming off to alleviate power terminal, but this structure has increased again the stray inductance that power is touched piece simultaneously. And comprise copper coin at the power model of 17mm, cover cermet substrate, semiconductor chip, device and shell for height, semiconductor chip is welded on and covers on cermet substrate, is connected to form main circuit by aluminium wire and the power terminal being injection-moulded in shell. The power model of this structure, little because being injection-moulded in power terminal current capacity in shell, therefore in shell, need a lot of power terminals to reach certain large electric current, cause shell cost higher, in addition power terminal has a L-type bending at least, also have larger radian so make to connect power terminal with the aluminium wire that covers cermet substrate, therefore this power terminal bending structure and aluminium wire radian have all increased the stray inductance of power model. Above-mentioned two kinds of structure power models all will cover cermet substrate and be welded on copper coin, and copper coin with cover cermet substrate and be connected by soldering-tin layer, copper coin has certain thermal resistance together with soldering-tin layer.
Summary of the invention
The purpose of this utility model is to provide one and has lower lead-in wire stray inductance and thermal resistance, can stop terminal with cover cermet substrate junction come off occur low inductance light and thin type power model.
The utility model is that the technical scheme achieving the above object is: a kind of low inductance light and thin type power model, comprise shell and be welded on the circuit that the semiconductor chip covering on cermet substrate, multiple power terminal and multiple control terminal form, it is characterized in that: described power terminal is that endoporus is established threaded cylinder, cylindrical bottom is fixed on to be covered on cermet substrate, in the shell wall of described shell, be provided with horizontal and vertical crossing blend stop, blend stop bottom is provided with at least one limited post, cover cermet substrate and be connected to outer casing bottom, and the limited post on blend stop withstands on and covers on cermet substrate, in shell, be marked with soft silicon gel layer, shell is provided with and atmosphere and the through hole that communicates in shell wall surrounding, the stress release that produces when described through hole expands for silicon gel layer and shrinks, each power terminal and each control terminal are through silicon gel layer, epoxy resin layer and shell, blend stop in shell and each power terminal and each control terminal are solidified into overall structure.
The utility model covers cermet substrate and is connected to outer casing bottom spacing by the limited post in shell, withstand and cover cermet substrate by limited post, to eliminate power model in the time working, because covering the cermet substrate gap producing with radiator of expanding with heat and contract with cold, ensure normal heat radiation when chip operation. in adopting, each power terminal of power model of the present utility model establishes threaded cylinder, its bottom welding is covering cermet substrate, because power terminal does not have bending structure, therefore make power model there is lower stray inductance, owing to reducing the inductance of power model, and can further improve power density and the functional reliability of power model. moreover, the cylindrical power model of the utility model can be very low by what highly control, in addition power model is not provided with copper soleplate, make power model overall height at 9～12.5mm, can effectively reduce total height and the encapsulation volume of power model, realize the miniaturization of power model, the utility model enclosure is filled with soft silicon gel layer and is used for protecting semiconductor chip, and epoxy resin layer and shell, blend stop in shell and each power terminal and each control terminal are solidified into overall structure, increase the constant intensity of each power terminal and each control terminal, can stop each terminal and cover the come off generation of problem of cermet substrate junction. the utility model shell is provided with the through hole communicating with atmosphere in shell wall surrounding, by through hole, the long-pending expansion of silica gel and the contraction stress that produces are discharged, reduce power model silica gel in the time of work and amass expansion and shrink the stress producing, eliminate the damage of this stress to epoxy resin layer with this. the soldering-tin layer that the utility model power model does not have copper soleplate and is connected with copper coin, the thermal resistance of power model, the end of compared with, reduces power attenuation, and can improve power model stability and reliability. the utility model adopts male and female face at the outer surface of power terminal, can increase and the bonded area of epoxy resin layer, increases the adhesion of each power terminal. the utility model shell is provided with the heavy stand communicating with end face along its length at two ends, heavy stand bottom is positioned at each heavy stand inner side and is provided with the long slot bore of perforation at fixed head, the both sides that fixed head is positioned at each heavy stand are provided with side channel hole, therefore can make long slot bore and side channel hole for fixed head strain, by making fixed head have certain elasticity, eliminate power model in the time installing and work, the stress damage producing covering cermet substrate.
Brief description of the drawings
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Fig. 1 is the structural representation of a kind of low inductance light and thin type power model of the utility model.
Fig. 2 is the blast structural representation of a kind of low inductance light and thin type power model of the utility model.
Fig. 3 is the sectional structure schematic diagram of a kind of low inductance light and thin type power model of the utility model.
Fig. 4 is the structural representation of the utility model shell.
Fig. 5 is that the A of Fig. 4 is to structural representation.
Wherein: 1-shell, 1-1-through hole, 1-2-long slot bore, 1-3-fixed head, 1-4-blend stop, 1-5-side channel hole, 1-6-limited post, 2-control terminal, 3-power terminal, 4-epoxy resin layer, 5-axle sleeve, 6-silicon gel layer, 7-cover cermet substrate, 8-semiconductor chip, 9-aluminium wire.
Detailed description of the invention
See the low inductance light and thin type of the one shown in Fig. 1～5 power model, comprise shell 1 and be welded on the circuit that the semiconductor chip 8, multiple power terminal 3 and the multiple control terminal 2 that cover on cermet substrate 7 form, semiconductor chip 8 and power terminal 3 and disposable being welded on of control terminal 2 can be covered on cermet substrate 7, this circuit is that the semiconductor chip 8 of this area routine and power device are connected to cover on cermet substrate 9 and form half-bridge circuit, chopper circuit, H bridge circuit or full-bridge circuit, meets the different function requirements of power model. The utility model can will cover cermet substrate 7 directly in fixed heat sink, be not provided with copper soleplate owing to covering cermet substrate 7 bottoms, therefore power model has lower thermal resistance, its thermal resistance is about 4/5 of power model that 17mm is high and the high power model of 34mm, owing to having reduced the power attenuation of power model, can improve stability and the reliability of power model.
See shown in Fig. 1～3, power terminal 3 of the present utility model is established threaded cylinder for endoporus, cover cermet substrate 7 and be connected to shell 1 bottom, power terminal 3 adopts endoporus to establish threaded copper sheathing, cylindrical bottom is fixed on to be covered on cermet substrate 7, can be weldingly fixed on and cover on cermet substrate 7, because power terminal 3 is without bending structure, solve power terminal 3 the produced larger radian that bends, and cannot further reduce the technical problem of stray inductance, simultaneously also can be by the height control of power model very low, and then reduction power model height, realize the miniaturization of power model. the periphery of the each power terminal 3 of the utility model is provided with the male and fomale(M&F) with epoxy resin layer 4 strong bonded, this male and fomale(M&F) can adopt annular knurl to process and form, also adopt other processing method to form, can increase the bonded area of power terminal 3 and epoxy resin by uneven of power terminal 3, strengthen the adhesion of power terminal 3 and epoxy resin, when the exit of outside power supply and equipment is arranged on power terminal 3 by securing member, realize the input and output of power model.
See shown in Fig. 1～5, in the shell wall of the utility model shell 1, be provided with horizontal and vertical crossing blend stop 1-4, not only make shell 1 there is good intensity, and in the time that epoxy resin layer 4 and shell 1 are fixing, can increase and the contact-making surface of epoxy resin by blend stop 1-4, make together with epoxy resin layer 4 and shell 1 and power terminal 3 be set in reliably. the utility model is provided with at least one limited post 1-6 in blend stop 1-4 bottom, limited post 1-6 on blend stop 1-4 withstands on and covers on cermet substrate 7, see Fig. 4, the 1-6 of this limited post shown in 5 can adopt two or more, this limited post 1-6 can be distributed on blend stop 1-4, after epoxy resin layer 4 is fixing with shell 1, limited post 1-6 on blend stop 1-4 is withstood on all the time to be covered on cermet substrate 7, when cover cermet substrate 7 because of expand with heat and contract with cold with radiator produce gap, withstand and cover cermet substrate 7 by limited post 1-6, making to cover cermet substrate 7 is fitted on radiator, and normal heat radiation while ensureing the work of each device.
As shown in Figure 3; the utility model is marked with soft silicon gel layer 6 in shell 1; to cover cermet substrate 7 by silicon gel layer 6 is on the one hand connected on shell 1; by silicon gel layer 6, the aluminium wire 9 and the device that cover the semiconductor chip 8, bonding on cermet substrate 7 tops and connect are carried out to seal protection on the other hand; the utility model is provided with and atmosphere and the through hole 1-1 that communicates in shell wall surrounding at shell 1, the stress release that produces when this through hole 1-1 expands and shrinks for silica gel is long-pending. See shown in Fig. 1,2 and 4,5, through hole 1-1 in the utility model shell 1 shell wall surrounding is L-shaped, through hole 1-1 one end communicates with shell 1 upper surface, the other end communicates with the shell wall inner side of shell 1 bottom, communicating with silicon gel layer 6 of through hole 1-1 bottom and top communicates with atmosphere, therefore can amass the stress that expands and shrink generation by timely delivered power module silica gel in the time working by multiple through hole 1-1, therefore can eliminate the damage of this stress to epoxy resin, to keep the reliability of power model work.
See Fig. 2, shown in 3, the each power terminal 3 of the utility model and each control terminal 2 are through silicon gel layer 6, epoxy resin layer 4 and shell 1, blend stop 1-4 in shell 1 and each power terminal 3 and each control terminal 2 are solidified into overall structure, epoxy resin layer 4 of the present utility model maintains an equal level lower than shell 1 end face or with shell 1 end face, and the end face of power terminal 3 can be held face with epoxy resin layer 4 end faces, but not higher than shell 1 end face, each control terminal 2 stretches out shell 1 end face 1.5～3.5mm, make the overall height of power terminal 3 can be at 9～12.5mm, the overall height of power terminal 3 can be at 10～11.8mm, owing to not establishing copper soleplate, the utility model outer cover height can design at 7.5～10mm, therefore can reduce encapsulation volume, shell 1 height of the present utility model can have axle sleeve 5 four of shell 1 jiao, this axle sleeve 5 can adopt metalwork, be connected with radiator to facilitate by securing member, the utility model is fixedly connected with power terminal 3 and control terminal 2 with epoxy resin layer 4, and increase the reliability of its connection, can stop the come off generation of problem of power terminal 3 and control terminal 2 and the junction of covering cermet substrate 7.
See shown in Fig. 1,5, the utility model shell 1 is provided with the heavy stand communicating with end face along its length at two ends, heavy stand bottom is provided with fixed head 1-3, fixed head 1-3 is positioned at each heavy stand inner side and is provided with the long slot bore 1-2 of perforation, the both sides that fixed head 1-3 is positioned at each heavy stand are provided with side channel hole 1-5, long slot bore 1-2 and side channel hole 1-5 are for fixed head 1-3 strain, by the strain of fixed head 1-3, eliminate power model in the time installing and work, the stress damage producing covering cermet substrate 7, the functional reliability of raising power model.
Claims (5)
1. a low inductance light and thin type power model, comprises shell (1) and is welded on and cover on cermet substrate (7)The circuit that semiconductor chip (8), multiple power terminal (3) and multiple control terminal (2) form, is characterized in that: instituteThe power terminal (3) of stating is established threaded cylinder for endoporus, and cylindrical bottom is fixed on covers cermet substrate (7)Upper, cover cermet substrate (7) and be connected to shell (1) bottom; In the shell wall of described shell (1), be provided with laterally with verticalTo crossing blend stop (1-4), blend stop (1-4) bottom is provided with at least one limited post (1-6), and on blend stop (1-4)Limited post (1-6) withstands on and covers cermet substrate (7) above, is marked with soft silicon gel layer (6), shell in shell (1)(1) be provided with and atmosphere and the through hole (1-1) that communicates in shell wall surrounding, described through hole (1-1) is for silicon gel layer (6)The stress release that produces when expanding and shrinking, each power terminal (3) and each control terminal (2) pass silicon gel layer (6),Blend stop (1-4) and each power terminal (3) and each control in epoxy resin layer (4) and shell (1), shell (1)Terminal (2) is solidified into overall structure.
2. the low inductance light and thin type of one according to claim 1 power model, is characterized in that: described shell (1)Be provided with along its length the heavy stand communicating with end face at two ends, heavy stand bottom is provided with fixed head (1-3), fixed head (1-3)Be positioned at the long slot bore (1-2) that each heavy stand inner side is provided with perforation, the both sides that fixed head (1-3) is positioned at each heavy stand are provided with side channel hole(1-5), described long slot bore (1-2) and side channel hole (1-5) are for fixed head (1-3) strain.
3. the low inductance light and thin type of one according to claim 1 power model, is characterized in that: described each power endThe periphery of son (3) is provided with the male and fomale(M&F) with epoxy resin layer (4) strong bonded.
4. the low inductance light and thin type of one according to claim 1 power model, is characterized in that: described shell (1)Through hole (1-1) in shell wall surrounding is L-shaped, through hole (1-1) one end communicates with shell (1) upper surface, the other end andThe shell wall inner side of shell (1) bottom communicates.
5. the low inductance light and thin type of one according to claim 1 power model, is characterized in that: described power modelOverall height at 9～12.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521083744.0U CN205248250U (en) | 2015-12-23 | 2015-12-23 | Low inductance light and thin type power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521083744.0U CN205248250U (en) | 2015-12-23 | 2015-12-23 | Low inductance light and thin type power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205248250U true CN205248250U (en) | 2016-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521083744.0U Expired - Fee Related CN205248250U (en) | 2015-12-23 | 2015-12-23 | Low inductance light and thin type power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205248250U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448846A (en) * | 2015-12-23 | 2016-03-30 | 江苏宏微科技股份有限公司 | Low inductance thin and light type power module |
| CN111146168A (en) * | 2019-12-19 | 2020-05-12 | 湖南国芯半导体科技有限公司 | Power terminal and power module |
-
2015
- 2015-12-23 CN CN201521083744.0U patent/CN205248250U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448846A (en) * | 2015-12-23 | 2016-03-30 | 江苏宏微科技股份有限公司 | Low inductance thin and light type power module |
| CN105448846B (en) * | 2015-12-23 | 2017-12-05 | 江苏宏微科技股份有限公司 | Low inductance light and thin type power model |
| CN111146168A (en) * | 2019-12-19 | 2020-05-12 | 湖南国芯半导体科技有限公司 | Power terminal and power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160518 Termination date: 20181223 |