CN105448846B - Low inductance light and thin type power model - Google Patents
Low inductance light and thin type power model Download PDFInfo
- Publication number
- CN105448846B CN105448846B CN201510976938.1A CN201510976938A CN105448846B CN 105448846 B CN105448846 B CN 105448846B CN 201510976938 A CN201510976938 A CN 201510976938A CN 105448846 B CN105448846 B CN 105448846B
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- shell
- terminal
- power model
- cermet substrate
- blend stop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
- H01L2224/1412—Layout
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of low inductance light and thin type power model, including shell, the circuit that the semiconductor chip covered on cermet substrate, power terminal and control terminal are formed is welded on, power terminal is that endoporus sets threaded cylinder, and the bottom of cylinder, which is fixed on, to be covered on cermet substrate；Horizontal and vertical intersecting blend stop is provided with the shell wall of shell, blend stop bottom is provided with least one limited post, cover cermet substrate and be connected to outer casing bottom, limited post on blend stop, which is withstood on, to be covered on cermet substrate, soft silicon gel layer is marked with shell, shell is used for produced stress release when silicon gel layer expands and shunk in the through hole that shell wall is surrounded by, each power terminal and each control terminal pass through silicon gel layer, and epoxy resin layer is solidified into overall structure with shell, the blend stop in shell and each power terminal and each control terminal.The present invention has relatively low wiring parasitic inductance and thermal resistance, can prevent terminal and cover the generation that the junction of cermet substrate comes off.
Description
Technical field
The present invention relates to a kind of low inductance light and thin type power model, belong to power model manufacturing technology field.
Background technology
The guide module of power half is used for inverter type welder, the controller of various Switching Power Supplies and electric vehicle controller etc., its
Main function is that the direct current of input is changed into three-phase alternating current electricity output.And power semiconductor modular, it is one or more drives
Moving cell and the composition three-phase circuit work of one or more power models.
Current power model mainly has two kinds of structures, and a kind of height of the power model of structure is another in 34mm or so
The height of the power model of kind structure is in 17mm or so.Height includes copper coin in 34mm module, covers cermet substrate, partly leads
Body chip, device and power terminal, control terminal and shell, semiconductor chip, device power terminal and control terminal welding
On cermet substrate is covered and main circuit is formed, power terminal passes the power end sub-aperture on the cover plate on shell, by power
Terminal is stuck on the nut seat of shell after bending, and this power terminal one end, which is weldingly fixed on, to be covered on cermet substrate, another
End is in then vacant state, in vibration environment, easily causes the fixing end of power terminal to come off.For this, some power terminals can be adopted
With multiple bending structures, caused impulsive force is shaken to absorb and alleviate, to alleviate the risk that power terminal comes off, but simultaneously
This structure adds the stray inductance that power touches block again.And for height 17mm power model include copper coin, cover metal
Ceramic substrate, semiconductor chip, device and shell, semiconductor chip, which is welded on, to be covered on cermet substrate, passes through aluminium wire and note
The power terminal moulded in shell connects to form main circuit.The power model of this structure, because of the power end being moulded in shell
Electron current capacity is small, therefore needs many power terminals to reach certain high current in shell, causes shell cost higher, in addition
Power terminal at least one L-type bending, so the aluminium wire for making connection power terminal and covering cermet substrate also has larger arc
Degree, therefore the power terminal bending structure and aluminium wire radian both increase the stray inductance of power model.Above two structure work(
Rate module will all cover ceramet group plate weld on copper coin, and copper coin with cover cermet substrate and connected by soldering-tin layer, copper
Plate and soldering-tin layer have certain thermal resistance together.
The content of the invention
It is an object of the invention to provide one kind to have relatively low wiring parasitic inductance and thermal resistance, can prevent terminal and cover metal pottery
Come off the low inductance light and thin type power model of generation at porcelain substrate connection.
The present invention is that the technical scheme for reaching above-mentioned purpose is：A kind of low inductance light and thin type power model, including shell and
The circuit that the semiconductor chip covered on cermet substrate, multiple power terminals and multiple control terminals are formed is welded on, it is special
Sign is：Described power terminal is that endoporus sets threaded cylinder, and the bottom of cylinder, which is fixed on, covers cermet substrate
On；Horizontal and vertical intersecting blend stop is provided with the shell wall of the shell, blend stop bottom is provided with least one limited post, covers metal
Ceramic substrate is connected to outer casing bottom, and the limited post on blend stop is withstood on and covered on cermet substrate, and soft silicon is marked with shell
Gel layer, shell are surrounded by the through hole communicated with air in shell wall, and the through hole is used for silicon gel layer and expands and shrink when institute
Stress release is produced, each power terminal and each control terminal pass through silicon gel layer, epoxy resin layer and the blend stop in shell, shell
And each power terminal and each control terminal are solidified into overall structure.
Wherein：The shell is provided with the heavy platform communicated with end face at both ends along its length, and heavy platform bottom is provided with fixed plate,
Fixed plate is provided with the long slot bore of insertion on the inside of each heavy platform, and the both sides that fixed plate is located at each heavy platform are provided with side channel hole, described
Long slot bore and side channel hole are used for fixed plate elastic deformation.
The periphery of each power terminal is provided with the male and fomale(M＆F) with epoxy resin layer strong bonded.
Through hole in the shell shell wall surrounding is L-shaped, and through hole one end communicates with shell upper surface, under the other end and shell
Communicated on the inside of the shell wall in portion.
The overall height of the power model is in 9~12.5mm.
The present invention covers cermet substrate and is connected to outer casing bottom and spacing by the limited post in shell, passes through spacing capital
Firmly cover cermet substrate, to eliminate power model at work, because cover cermet substrate expand with heat and contract with cold and with radiator produce
Raw gap, ensure proper heat reduction during chip operation.Each power terminal of the power model of the present invention is provided with screw thread in using
Cylinder, its bottom, which is welded on, covers cermet substrate, because power terminal does not have bending structure, therefore has power model
Have relatively low stray inductance, due to the inductance of power model can be reduced, and can further improve power model power density and
Functional reliability.Moreover the power model of cylinder of the present invention can be by the very low of height control, power model is not provided with addition
Copper soleplate, make power model overall height in 9~12.5mm, the total height and encapsulation volume of power model can be effectively reduced,
Realize the miniaturization of power model, enclosure of the present invention is used for protecting semiconductor chip filled with soft silicon gel layer, and epoxy
Resin bed is solidified into overall structure with shell, the blend stop in shell and each power terminal and each control terminal, adds each work(
The fixing intensity of rate terminal and each control terminal, can prevent each terminal and cover cermet substrate junction to come off the hair of problem
It is raw.Shell of the present invention is surrounded by the through hole communicated with air in shell wall, to Silica hydrogel volumetric expansion and shrinks institute by through hole
Produce stress to be discharged, reduce power model Silica hydrogel volumetric expansion and stress caused by contraction at work, eliminated with this
Damage of the stress to epoxy resin layer.Power model of the present invention does not have copper soleplate and the soldering-tin layer being connected with copper coin, power mould
The thermal resistance of block can improve power model stability and reliability compared with bottom, reduction power attenuation.The present invention is in the outer of power terminal
Surface uses male and female face, can increase with the bonded area of epoxy resin layer, increase the adhesion of each power terminal.Shell of the present invention
The heavy platform communicated with end face is provided with both ends along its length, heavy platform bottom is located on the inside of each heavy platform in fixed plate is provided with insertion
Long slot bore, the both sides that fixed plate is located at each heavy platform are provided with side channel hole, therefore long slot bore and side channel hole can be made to be used for fixed plate elasticity
Deformation, by making fixed plate have certain elasticity, power model is eliminated in installation and work, is produced to covering cermet substrate
Stress damage.
Brief description of the drawings
Embodiments of the invention are described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is the structural representation of the low inductance light and thin type power model of the present invention.
Fig. 2 is the configuration schematic diagram of the low inductance light and thin type power model of the present invention.
Fig. 3 is the cross section structure diagram of the low inductance light and thin type power model of the present invention.
Fig. 4 is the structural representation of shell of the present invention.
Fig. 5 is Fig. 4 A to structural representation.
Wherein：1-shell, 1-1-through hole, 1-2-long slot bore, 1-3-fixed plate, 1-4-blend stop, 1-5-side channel hole,
1-6-limited post, 2-control terminal, 3-power terminal, 4-epoxy resin layer, 5-axle sleeve, 6-silicon gel layer, 7-cover gold
Belong to ceramic substrate, 8-semiconductor chip, 9-aluminium wire.
Embodiment
See the low inductance light and thin type power model shown in Fig. 1~5, including shell 1 and being welded on is covered on cermet substrate 7
Semiconductor chip 8, the circuit that forms of multiple power terminals 3 and multiple control terminals 2, can be by semiconductor chip 8 and power
Terminal 3 and disposable be welded on of control terminal 2 are covered on cermet substrate 7, and the circuit is the conventional semiconductor chip 8 in this area
And power device is connected to cover and half-bridge circuit, chopper circuit, H-bridge circuit or full-bridge circuit is formed on cermet substrate 9, meets
The different function requirements of power model.The present invention can will cover cermet substrate 7 can be directly in fixed heat sink, due to covering metal
The bottom of ceramic substrate 7 is not provided with copper soleplate, therefore power model has relatively low thermal resistance, and its thermal resistance is about the high power moulds of 17mm
The 4/5 of block and the high power models of 34mm, due to reducing the power attenuation of power model, can improve the stability of power model
And reliability.
As shown in Fig. 1~3, power terminal 3 of the invention is that endoporus sets threaded cylinder, covers cermet substrate 7
The bottom of shell 1 is connected to, power terminal 3 sets threaded copper sheathing using endoporus, and the bottom of cylinder, which is fixed on, covers cermet
On substrate 7, solderable be fixed on is covered on cermet substrate 7, because power terminal 3 is without bending structure, solves power end
Son 3 bend caused by larger radian, and can not further reduce the technical problem of stray inductance, while also can be by power model
Height control it is very low, and then reduce power model height, realize the miniaturization of power model.Each power terminal of the present invention
3 periphery is provided with the male and fomale(M＆F) with the strong bonded of epoxy resin layer 4, and the male and fomale(M＆F) can be formed using annular knurl processing, also used
Other processing methods are formed, and can increase the faying face of power terminal 3 and epoxy resin by 3 uneven face of power terminal
Product, that is, strengthen the adhesion of power terminal 3 and epoxy resin, when the power supply of outside and the exit of equipment are pacified by fastener
On power terminal 3, the input and output of power model are realized.
As shown in Fig. 1~5, horizontal and vertical intersecting blend stop 1-4 is provided with the shell wall of shell 1 of the present invention, is not only made outer
Shell 1 has preferable intensity, and when epoxy resin layer 4 and shell 1 are fixed, and can be increased by blend stop 1-4 and epoxy resin
Contact surface, epoxy resin layer 4 is reliably freezing together with shell 1 and power terminal 3.The present invention is in blend stop 1-4 bottoms
Provided with least one limited post 1-6, the limited post 1-6 on blend stop 1-4, which is withstood on, to be covered on cermet substrate 7, sees Fig. 4, should shown in 5
Limited post 1-6 can use two or more, and limited post 1-6 can be distributed on blend stop 1-4, and epoxy resin layer 4 is solid with shell 1
After fixed, the limited post 1-6 on blend stop 1-4 is withstood on all the time and cover on cermet substrate 7, when covering cermet substrate 7 because of heat expansion
Gap caused by shrinkage and radiator, is withstood by limited post 1-6 and covers cermet substrate 7, is made to cover cermet substrate 7 and is bonded
On a heat sink, proper heat reduction during each device work is ensured.
As shown in Figure 3, the present invention is marked with soft silicon gel layer 6 in shell 1, on the one hand will cover gold by silicon gel layer 6
Category ceramic substrate 7 is connected on shell 1, on the other hand by silicon gel layer 6 to covering the semiconductor core on the top of cermet substrate 7
Piece 8, the aluminium wire 9 of bonding connection and device carry out sealing protection, and the present invention is surrounded by shell 1 in shell wall to be communicated with air
Through hole 1-1, through hole 1-1 be used for Silica hydrogel volumetric expansion and shrink when produced stress release.See Fig. 1,2 and 4,5 institutes
Show, the through hole 1-1 in the shell wall surrounding of shell 1 of the present invention is L-shaped, and through hole 1-1 one end communicates with the upper surface of shell 1, the other end with
Communicated on the inside of the shell wall of the bottom of shell 1, being communicated with silicon gel layer 6 for through hole 1-1 bottoms and top communicates with air, therefore lead to
Crossing multiple through hole 1-1 can timely delivered power module Silica hydrogel volumetric expansion and stress caused by contraction, therefore can at work
Damage of the stress to epoxy resin is eliminated, to keep the reliability that power model works.
As shown in Fig. 2,3, each power terminal 3 of the present invention and each control terminal 2 pass through silicon gel layer 6, epoxy resin layer 4 and
Blend stop 1-4 and each power terminal 3 and each control terminal 2 in shell 1, shell 1 are solidified into overall structure, epoxy of the invention
Resin bed 4 maintains an equal level less than the top surface of shell 1 or with the end face of shell 1, and the end face of power terminal 3 can be held with the top surface of epoxy resin layer 4
Face, but the top surface of shell 1 is not higher than, each control terminal 2 stretches out the 1.5~3.5mm of top surface of shell 1, makes the overall height of power terminal 3
Can be in 9~12.5mm, the overall height of power terminal 3 can be in 10~11.8mm, due to not setting copper soleplate, outer cover height of the present invention
Can design in 7.5~10mm, can thus encapsulation volume can be reduced, shell 1 of the invention highly can have axle sleeve in the corner of shell 1
5, the axle sleeve 5 can use metalwork, be connected with facilitating by fastener with radiator, and the present invention is by power terminal 3 and controls
Terminal 2 is fixedly connected with epoxy resin layer 4, and increases the reliability of its connection, can prevent power terminal 3 and control terminal 2 with
The junction for covering cermet substrate 7 comes off the generation of problem.
As shown in Fig. 1,5, shell 1 of the present invention is provided with the heavy platform communicated with end face, heavy platform bottom at both ends along its length
Provided with fixed plate 1-3, fixed plate 1-3 is provided with the long slot bore 1-2 of insertion on the inside of each heavy platform, and fixed plate 1-3 is located at each heavy platform
Both sides be provided with side channel hole 1-5, long slot bore 1-2 and side channel hole 1-5 and be used for fixed plate 1-3 elastic deformations, pass through fixed plate 1-3's
Elastic deformation, power model is eliminated in installation and work, to covering stress damage caused by cermet substrate 7, improve power
The functional reliability of module.
Claims (5)
1. a kind of low inductance light and thin type power model, including shell (1) and it is welded on the semiconductor covered on cermet substrate (7)
The circuit that chip (8), multiple power terminals (3) and multiple control terminals (2) are formed, it is characterised in that：Described power terminal
(3) threaded cylinder is set for endoporus, the bottom of cylinder, which is fixed on, to be covered on cermet substrate (7), covers ceramet group
Plate (7) is connected to shell (1) bottom；Horizontal and vertical intersecting blend stop (1-4), blend stop are provided with the shell wall of the shell (1)
(1-4) bottom is provided with least one limited post (1-6), and the limited post (1-6) on blend stop (1-4) withstands on and covers cermet substrate
(7) on, soft silicon gel layer (6) is marked with shell (1), shell (1) is surrounded by the through hole (1- communicated with air in shell wall
1), the through hole (1-1) is used for produced stress release, each power terminal (3) and each control when silicon gel layer (6) expands and shunk
Terminal (2) processed passes through silicon gel layer (6), epoxy resin layer (4) and shell (1), the blend stop (1-4) in shell (1) and each work(
Rate terminal (3) and each control terminal (2) are solidified into overall structure.
2. low inductance light and thin type power model according to claim 1, it is characterised in that：The shell (1) is along length side
Fixed plate (1-3) is provided with provided with the heavy platform communicated with end face, heavy platform bottom at both ends, fixed plate (1-3) is located in each heavy platform
Side is provided with the long slot bore (1-2) of insertion, and the both sides that fixed plate (1-3) is located at each heavy platform are provided with side channel hole (1-5), described elongated slot
Hole (1-2) and side channel hole (1-5) are used for fixed plate (1-3) elastic deformation.
3. low inductance light and thin type power model according to claim 1, it is characterised in that：Each power terminal (3)
Periphery is provided with the male and fomale(M＆F) with epoxy resin layer (4) strong bonded.
4. low inductance light and thin type power model according to claim 1, it is characterised in that：Shell (1) the shell wall surrounding
On through hole (1-1) it is L-shaped, through hole (1-1) one end communicates with shell (1) upper surface, the shell wall of the other end and shell (1) bottom
Inner side communicates.
5. low inductance light and thin type power model according to claim 1, it is characterised in that：The overall height of the power model
Degree is in 9~12.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510976938.1A CN105448846B (en) | 2015-12-23 | 2015-12-23 | Low inductance light and thin type power model |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510976938.1A CN105448846B (en) | 2015-12-23 | 2015-12-23 | Low inductance light and thin type power model |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105448846A CN105448846A (en) | 2016-03-30 |
| CN105448846B true CN105448846B (en) | 2017-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510976938.1A Active CN105448846B (en) | 2015-12-23 | 2015-12-23 | Low inductance light and thin type power model |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110114868B (en) * | 2016-10-17 | 2023-06-27 | 上海利韬电子有限公司 | Embedded protection circuit module |
| CN115295498B (en) * | 2022-10-10 | 2023-01-24 | 合肥中恒微半导体有限公司 | High-temperature-resistant IGBT power module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6424026B1 (en) * | 1999-08-02 | 2002-07-23 | International Rectifier Corporation | Power module with closely spaced printed circuit board and substrate |
| CN101523597A (en) * | 2006-12-27 | 2009-09-02 | 爱信艾达株式会社 | Electronic circuit device and method for manufacturing the same |
| CN104867887A (en) * | 2015-05-04 | 2015-08-26 | 嘉兴斯达半导体股份有限公司 | Two-layer encapsulated power module and packaging method |
| CN205248250U (en) * | 2015-12-23 | 2016-05-18 | 江苏宏微科技股份有限公司 | Low inductance light and thin type power module |
-
2015
- 2015-12-23 CN CN201510976938.1A patent/CN105448846B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6424026B1 (en) * | 1999-08-02 | 2002-07-23 | International Rectifier Corporation | Power module with closely spaced printed circuit board and substrate |
| CN101523597A (en) * | 2006-12-27 | 2009-09-02 | 爱信艾达株式会社 | Electronic circuit device and method for manufacturing the same |
| CN104867887A (en) * | 2015-05-04 | 2015-08-26 | 嘉兴斯达半导体股份有限公司 | Two-layer encapsulated power module and packaging method |
| CN205248250U (en) * | 2015-12-23 | 2016-05-18 | 江苏宏微科技股份有限公司 | Low inductance light and thin type power module |
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| CN105448846A (en) | 2016-03-30 |
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