CN205141028U - Power semiconductor module of integrated hall current sensor - Google Patents
Power semiconductor module of integrated hall current sensor Download PDFInfo
- Publication number
- CN205141028U CN205141028U CN201520908941.5U CN201520908941U CN205141028U CN 205141028 U CN205141028 U CN 205141028U CN 201520908941 U CN201520908941 U CN 201520908941U CN 205141028 U CN205141028 U CN 205141028U
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- China
- Prior art keywords
- magnetic core
- output electrode
- current sensor
- power semiconductor
- hall element
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Abstract
The utility model provides a power semiconductor module of integrated hall current sensor, includes output electrode, sampling control terminal, bottom plate, ceramic substrate, shell, output electrode is connected with the output electrode arm that is on a parallel with the bottom plate direction and sets up, the output electrode arm links to each other with ceramic substrate, the cover has the sensor magnetic core on the output electrode arm, the sensor magnetic core has a magnetic core opening up, a pin hall element is up inserted to the magnetic core opening part, the corresponding position department that the shell is lieing in magnetic core opening top is equipped with the jack, hall element's pin is worn out from the jack. The utility model discloses it is integrated in the inside of power semiconductor module with current sensor, increase control system's integrated level, miniaturized degree and stability, and reduced follow -up use cost.
Description
Technical field
The utility model relates to field of power electronics, is specifically related to the power semiconductor modular of Integrated Hall current sensor.
Background technology
Power model is that power electronic electrical device is as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect transistor (IGBT), the power switch module that fast recovery diode (FRD) is combined and packaged into by certain function, it is mainly used in electric automobile, photovoltaic generation, wind power generation, the power transfer under the various occasion such as industrial frequency conversion.The topological structure of power semiconductor modular is single tube, Unit two, Unit six etc., can be combined into the circuit form such as half-bridge, three phase full bridge as required.In actual use, usually need to obtain output current value.
The defect that conventional power semiconductors module exists is exactly do not possess current sample function, directly can not measure the size of output current, the problem caused like this is exactly, and when output current measured by needs, needs to install current sensor on the busbar connected with exchanging output electrode.Thus by the electric signal transmission that samples to control section.But install current sensor and take up room comparatively large on busbar, sometimes even need by busbar bending to coordinate the installation of current sensor, this mode not only bad for system compact, and installs trouble, cost is higher, and response speed is slower.
Summary of the invention
Goal of the invention: for the problems referred to above, the utility model aims to provide the power semiconductor modular of Integrated Hall current sensor.
Technical scheme: a kind of power semiconductor modular of Integrated Hall current sensor, comprise output electrode, controlling of sampling terminal, base plate, ceramic substrate, shell, described output electrode is connected with the output electrode arm being parallel to base plate direction and arranging, described output electrode arm is connected with ceramic substrate, on described output electrode arm, cover has transducer magnetic core, described transducer magnetic core has a magnetic core opening upward, and described magnetic core opening part is inserted with pin Hall element upward; The corresponding position that described shell is being positioned at magnetic core overthe openings is provided with jack, and the pin of described Hall element passes from jack.
Further, the size of described jack is not more than the size of magnetic core opening.
Further, the pin of described Hall element is welded on driving PCB plate together with controlling of sampling terminal.
Further, described Hall element uses epoxy glue or adhesive glue to fix at magnetic core opening part.
Further, described output electrode arm is determined aluminum steel mode with ceramic substrate by ultrasonic bonding mode or nation and is connected.
Beneficial effect: Hall current sensor is integrated in the inside of power semiconductor modular by the utility model, simplifies the mounting means of current sensor, is more conducive to the protection of the integrated of controller and power semiconductor modular.Meanwhile, the certainty of measurement of Hall current sensor is higher, measuring frequency scope is comparatively wide and have good isolation effect, uses epoxy glue or adhesive glue to fix the position of Hall element both flexible, in turn ensure that the fastness of Hall element.The utility model adds the integrated level of control system, degree of miniaturization and stability, and reduces follow-up use cost.
Accompanying drawing explanation
Fig. 1 is the internal structure schematic diagram of the first connected mode of the present utility model;
Fig. 2 is the internal structure schematic diagram of the second connected mode of the present utility model;
Fig. 3 is the structural representation of the first connected mode of the present utility model;
Fig. 4 is the structural representation of the second connected mode of the present utility model.
Embodiment
As shown in Figure 1, a kind of power semiconductor modular of Integrated Hall current sensor, comprise output electrode 1, negative electrode 2, positive electrode 3, controlling of sampling terminal 4, base plate 5, ceramic substrate 6, shell 7, described output electrode 1 is connected with the output electrode arm 8 being parallel to base plate 5 direction and arranging, described output electrode arm 8 is connected with ceramic substrate 6, on described output electrode arm 8, cover has transducer magnetic core 9, makes every cross streams output electrode 1 by a transducer magnetic core 9.Described transducer magnetic core 9 has a magnetic core opening upward, and the opening part of magnetic core is the insertion position of follow-up Hall element 10, and the pin of Hall element 10 upward.
As shown in Figure 3, in order to coordinate the insertion of this Hall element 10, described shell 7 is provided with jack 11 in the corresponding position being positioned at magnetic core overthe openings, and the pin of described Hall element 10 passes from jack 11.The size of jack 11 is not more than the size of magnetic core opening.Whole Hall element 10 can be passed from jack 11.
Hall element 10 can insert magnetic core opening when power semiconductor modular is assembled, then mounting casing; Also after power semiconductor modular has been assembled, can insert at jack 11 place of shell 7, now Hall element 10 and transducer magnetic core 9 just constitute Hall current sensor; Can also first Hall element 10 be welded on the driving PCB plate of subsequent installation, when then driving PCB plate is installed on power semiconductor modular, makes Hall element 10 be inserted into jack 11 place of shell 7, form Hall current sensor with transducer magnetic core 9.
In order to prevent Hall element 10 to be shifted, Hall element 10 uses epoxy glue or adhesive glue to fix at magnetic core opening part.Epoxy glue or adhesive glue can be injected shell 7 from jack 11 and solidify after Hall element 10 inserts jack 11, also first uncured epoxy glue or adhesive glue can be injected in jack 11, again Hall element 10 is inserted jack 11, after solidifying, can ensure that the position of Hall element 10 is fixed and the reliability of follow-up connection.
Electric current flow through output electrode 1 and around output electrode 1 generation magnetic field; Hall element 10 obtains corresponding current value by the magnetic flux density detecting this magnetic field; and be converted into voltage signal and be transferred to control circuit; when current anomaly; by control circuit by controlling of sampling terminal switch-off power device, thus protection power device.
The pin of Hall element 10 can directly be welded on driving PCB plate together with controlling of sampling terminal 4, achieves quick sampling and reliable and stable connection.
The output electrode 1 of power semiconductor modular can as shown in figures 1 and 3, adopt ultrasonic welding process to connect with the connection of ceramic substrate 6; Also can as shown in Figure 2 and Figure 4, nation be adopted to determine crude aluminum line to realize to connect.
Hall current sensor is integrated in the inside of power semiconductor modular by the utility model, adds the integrated level of control system, degree of miniaturization and stability, and reduces follow-up use cost.
Claims (5)
1. the power semiconductor modular of an Integrated Hall current sensor, comprise output electrode (1), controlling of sampling terminal (4), base plate (5), ceramic substrate (6), shell (7), described output electrode (1) is connected with the output electrode arm (8) being parallel to base plate (5) direction and arranging, described output electrode arm (8) is connected with ceramic substrate (6), it is characterized in that: the upper cover of described output electrode arm (8) has transducer magnetic core (9), described transducer magnetic core (9) has a magnetic core opening upward, described magnetic core opening part is inserted with pin Hall element upward (10), described shell (7) is provided with jack (11) in the corresponding position being positioned at magnetic core overthe openings, and the pin of described Hall element (10) passes from jack (11).
2. the power semiconductor modular of Integrated Hall current sensor according to claim 1, is characterized in that, the size of described jack (11) is not more than the size of magnetic core opening.
3. the power semiconductor modular of Integrated Hall current sensor according to claim 1, is characterized in that, the pin of described Hall element (10) is welded on driving PCB plate together with controlling of sampling terminal (4).
4. the power semiconductor modular of Integrated Hall current sensor according to claim 1, is characterized in that, described Hall element (10) uses epoxy glue or adhesive glue to fix at magnetic core opening part.
5. the power semiconductor modular of Integrated Hall current sensor according to claim 1, is characterized in that, described output electrode arm (8) is determined aluminum steel mode with ceramic substrate (6) by ultrasonic bonding mode or nation and is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520908941.5U CN205141028U (en) | 2015-11-13 | 2015-11-13 | Power semiconductor module of integrated hall current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520908941.5U CN205141028U (en) | 2015-11-13 | 2015-11-13 | Power semiconductor module of integrated hall current sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205141028U true CN205141028U (en) | 2016-04-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520908941.5U Withdrawn - After Issue CN205141028U (en) | 2015-11-13 | 2015-11-13 | Power semiconductor module of integrated hall current sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205141028U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428521A (en) * | 2015-11-13 | 2016-03-23 | 扬州国扬电子有限公司 | Power semiconductor module integrated with Hall current sensor |
-
2015
- 2015-11-13 CN CN201520908941.5U patent/CN205141028U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428521A (en) * | 2015-11-13 | 2016-03-23 | 扬州国扬电子有限公司 | Power semiconductor module integrated with Hall current sensor |
| CN105428521B (en) * | 2015-11-13 | 2017-10-27 | 扬州国扬电子有限公司 | The power semiconductor modular of Integrated Hall current sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160406 Effective date of abandoning: 20171027 |